WO2007077171A2 - Verfahren und einrichtung zur umsetzung metallischer vorläuferschichten zu chalkopyritschichten von cigss-solarzellen - Google Patents
Verfahren und einrichtung zur umsetzung metallischer vorläuferschichten zu chalkopyritschichten von cigss-solarzellen Download PDFInfo
- Publication number
- WO2007077171A2 WO2007077171A2 PCT/EP2006/070178 EP2006070178W WO2007077171A2 WO 2007077171 A2 WO2007077171 A2 WO 2007077171A2 EP 2006070178 W EP2006070178 W EP 2006070178W WO 2007077171 A2 WO2007077171 A2 WO 2007077171A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reaction
- reaction box
- reaction chamber
- box
- sulfur
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000002243 precursor Substances 0.000 title claims abstract description 33
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 229910052951 chalcopyrite Inorganic materials 0.000 title claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 141
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 27
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011593 sulfur Substances 0.000 claims abstract description 24
- 239000011669 selenium Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000009530 blood pressure measurement Methods 0.000 claims description 3
- 239000002241 glass-ceramic Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 229910052798 chalcogen Inorganic materials 0.000 description 19
- 150000001787 chalcogens Chemical class 0.000 description 19
- 239000011521 glass Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 platelets Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the invention relates to a method and a device for converting metallic precursor layers (referred to below as precursor) with sulfur and / or selenium to chalcopyrite layers of CIGSS solar cells in a reaction chamber of an RTP furnace.
- precursor metallic precursor layers
- the goal is the production of thin-film solar modules.
- the precursors may preferably contain Cu and In / Ga or else Cu, Zn, Sn. You can also include other elements such as Ag, Sb, Sn, Zn or Fe.
- the precursors may be thin layers (layer thicknesses of 0.1 to 5 ⁇ m) on support substrates, which may consist of glass, ceramic, metal or plastics.
- the Tragersubstrate can already with barrier layers precoated to keep contaminants from the glass from the precursor.
- barrier layers may be silicon interconnects, for example, silicon meitite.
- the reaction of the metallic precursor layers takes place with an element of group VI, in the present process sulfur and / or selenium (referred to below as chalcogen).
- the reaction (called in a further reaction) takes place at elevated temperatures while supplying energy in a so-called RTP oven (rapid thermal processing).
- a chalcogen supply of precursor with gaseous chalcogen which is vaporized in separate sources from the liquid phase and introduced via suitable feeds into the reaction chamber, for example a selenium shower, is known, see for example Gabor et al., High-efficiency CuIn x Ga x Se 2 solar cells made from (x Ga x In) 2Se3 precursor films, Appl. Phys. Lett. 65 (2), 1994, 198-200.
- the substrates coated with the precursor are introduced into a reaction space.
- the reaction space can have any shape and can be made of metal, glass or graphite, which is uncoated or coated.
- the reaction space may contain openings and valves
- the substrates with the precursor can be introduced directly into the reaction space, in which they are placed on the ground or adjusted or mounted in suitable holders vertically or horizontally.
- a device and a method for tempering precursor layers in an RTP furnace are known, according to which the coated substrate is introduced into a container which has a base and a lid made of glass ceramic.
- the purpose of housing in the container is the targeted supply of energy to the substrate from one side and the precursor from the other side, wherein the transparent covers of the container form filters for a preferred radiation range.
- the solar modules produced in this way have a still too low efficiency compared to the theoretically achievable or achieved on a laboratory scale values. For achievable values, see Siemer et al., Efficient CuInS2 solar cells from a rapid thermal process (RTP), Solar Energy Materials & Solar Cells 67 (2001), 159-166 and Probst et al. , CIGSSE Modules Pilot Processing: from Fundamental Investigations to Advanced Performance, WCPEC-3, Osaka, May 12-16, 2003.
- the invention has for its object to provide a method and apparatus of the type mentioned, with which the efficiency of the solar cell produced therewith is further increased.
- a substrate coated with the precursor and a sufficient amount of sulfur and / or selenium for the reaction are introduced into a sealingly closable reaction box provided with at least one outlet valve controllable outside the reaction chamber, which in turn is introduced into the reaction chamber of the RTP furnace.
- the reaction space is evacuated, wherein the reaction box is evacuated, and heated the reaction box with the substrate in the reaction chamber to a designated temperature and held for a certain process time at this temperature. Also conceivable is a separate evacuation of the reaction box.
- the pressure in the reaction box is measured and controlled via the at least one outlet valve.
- a suitable device for carrying out the method consists of a coated with a precursor Substrate and one for the reaction sufficient amount of sulfur and / or selenium feedable, sealingly sealable and provided with at least one controllable from outside the reaction chamber outlet valve whose internal pressure can be measured with a sensor.
- the reaction box can be made of metal, glass, ceramic, or graphite. It may be uncoated or coated and transparent or opaque.
- the reaction box is tight, meaning that during the process no gases escape into the reaction chamber by itself and no gases enter the reaction box from the reaction chamber either.
- the reaction box contains valves to adjust the pressure before and during the process. With the targeted pressure control, in particular the control of the sulfur pressure, the formation of destructive foreign phases is avoided in the process.
- the reaction box can be used directly for process pressure measurement by measuring the deflection of the reaction box lid.
- reaction box is evacuated before the start of the process, that is to say before heating. It is possible to set a defined background pressure with an inert gas in the box before the reaction starts.
- the supply of the chalcogen (preferably sulfur and / or selenium) can • directly into the reaction space; For this purpose, a sufficient amount of chalcogen in the reaction space available posed,
- the chalcogen can be placed on the bottom of the reaction space or reaction box.
- the chalcogen can also be placed in boats, the boats can be open or partially closed.
- the boats can be made of graphite, glass, ceramics or metal; they can be uncoated or coated.
- the amount of chalcogen is adjusted to the consumption during the reaction. It is fed only as much chalcogen, as is consumed by the layer during the reaction, so that an economical consumption is ensured; Otherwise, excess chalcogen would otherwise precipitate on the walls of the reaction chamber or reaction box and / or be pumped out in the vacuum pumps of the reaction chamber.
- the energy input for the reaction can be effected via radiators which are arranged above and / or below the reaction box in the reaction chamber.
- the energy can also be supplied via flat heating elements, which are mounted in the reaction chamber, or can be done via electrical resistance heaters, which are mounted in the reaction chamber.
- the energy is supplied in a controlled manner, so that the energy is provided according to the ongoing reactions.
- the reaction volume that is, the volume that must be heated and which comes in contact with the chalcogen
- the reaction pressure can be set by using a reaction box with pressure control defined be controlled and the reaction with it.
- different chemical phases are passed through which can be selectively controlled and adjusted via the pressure and the temperature in the reaction box. This can avoid unwanted by-products of the reaction and preferably set the desired reactions.
- the pressure in the reaction box can be determined very precisely via the deformation of the lid.
- the pressure in the reaction chamber can be adjusted to the pressure in the reaction box.
- any desired pressure in the reaction box can be adjusted during the reaction and specifically changed.
- the invention will be explained below with reference to an exemplary embodiment even closer.
- the accompanying drawing shows a reaction box used for the process, introduced into a reaction chamber of a RTP furnace, in a cross section.
- the reaction box 1 is a flat graphite box with a transparent cover 2 made of glass ceramic.
- the reaction box 1 is sealed against the lid 2 with a high temperature resistant seal.
- a valve block containing the pressure relief valves 3 and a controllable valve 4, via which the desired pressure can be set software controlled during the process.
- the lid 2 is removed.
- the reaction box 1 is equipped with a carrier substrate 5 made of glass, from which a solar module is produced after the successful process.
- the carrier substrate 5 is coated, for example, with molybdenum (0.1 to 2 ⁇ m layer thickness), copper (0.1 to 2 ⁇ m layer thickness) and indium (0.1 to 2 ⁇ m layer thickness).
- molybdenum 0.1 to 2 ⁇ m layer thickness
- copper 0.1 to 2 ⁇ m layer thickness
- indium 0.1 to 2 ⁇ m layer thickness
- the reaction box 1 is closed with the transparent cover 2 and then introduced into a reaction chamber 6 of an RTP furnace.
- the reaction box 1 is evacuated by means of a vacuum pump 7, then the controllable valve 4 is closed and the reaction box 1 is heated. The heating takes place in the reaction chamber of the RTP furnace
- Quartz radiators 8, which are mounted above and below the reaction box 1 in the Christskhunt 6. The reaction box 1 is moved from room temperature to process temperature during the process
- the heating process takes between 1 and 60 minutes.
- the current pressure in the reaction box 1 is measured permanently.
- the bending of the elastic cover 2 is optically detected by a sensor 9.
- the pressure in the reaction chamber 6 can be measured via a pressure sensor 10.
- special pressure profiles are set and maintained over the entire course.
- reaction box 1 defined pressures (between 0.1 and 100 hPa) are set before the beginning of the process via the supply of inert gas via a valve 11.
- the precursor layers (copper and indium on molybdenum) undergo defined phases. About the intermediate phases Culn2; Cunlng and the precursor reacts with sulfur to form CuInS 2 and CU 2 S / CUS.
- the temperature profile and above all the pressure profile are set in this way. that only the desired products (CuInS2 and CU2S / CUS) are formed from the starting materials and that no connections between In and S can occur.
- the formation of In-rich phases in the Cu-InS system (eg CuIn 6 S 8 ) is prevented.
- both the carrier substrate 5 and the precursor layers are heated, as well as the added elemental sulfur. This goes over the liquid into the gaseous phase.
- the boiling point of sulfur can be set exactly over the previously set inert gas pressure.
- the maximum pressure build-up in the reaction box is determined by the amount of added sulfur and the set temperature of the reaction box 1.
- the quartz emitters 7 are turned off and the reaction box 1 is cooled to room temperature.
- the excess sulfur is pumped out after opening the controllable valve 4 in the reaction chamber 6.
- the amount of sulfur required depends exclusively on the thickness of the precursor and can be determined to less than 30% excess, practically even considerably less. This ensures a careful handling of resources (here the amount of process substances used).
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/159,082 US20080305247A1 (en) | 2005-12-28 | 2006-12-22 | Method And Device For Converting Metallic Precursors Into Chalcopyrite Layers Of Cigss Solar Cells |
CN2006800491844A CN101346822B (zh) | 2005-12-28 | 2006-12-22 | 将金属初始层置换反应成cigss-太阳能电池的黄铜矿层的方法和装置 |
EP06841601A EP1966831A2 (de) | 2005-12-28 | 2006-12-22 | Verfahren und einrichtung zur umsetzung metallischer vorläuferschichten zu chalkopyritschichten von cigss-solarzellen |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005062977.6 | 2005-12-28 | ||
DE102005062977A DE102005062977B3 (de) | 2005-12-28 | 2005-12-28 | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007077171A2 true WO2007077171A2 (de) | 2007-07-12 |
WO2007077171A3 WO2007077171A3 (de) | 2007-08-23 |
Family
ID=37857191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/070178 WO2007077171A2 (de) | 2005-12-28 | 2006-12-22 | Verfahren und einrichtung zur umsetzung metallischer vorläuferschichten zu chalkopyritschichten von cigss-solarzellen |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080305247A1 (de) |
EP (1) | EP1966831A2 (de) |
CN (1) | CN101346822B (de) |
DE (1) | DE102005062977B3 (de) |
WO (1) | WO2007077171A2 (de) |
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WO2009138072A1 (de) * | 2008-05-14 | 2009-11-19 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Vakuum-druckmessvorrichtung für einen rtp-vakuumofen |
WO2010060646A1 (de) * | 2008-11-28 | 2010-06-03 | Volker Probst | Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten |
USD625695S1 (en) | 2008-10-14 | 2010-10-19 | Stion Corporation | Patterned thin film photovoltaic module |
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EP2369033A1 (de) | 2010-03-26 | 2011-09-28 | Saint-Gobain Glass France | Verfahren zum Nachfüllen einer Verdampferkammer |
EP2371991A1 (de) | 2010-03-26 | 2011-10-05 | Saint-Gobain Glass France | Verfahren zum diskontinuierlichen Nachfüllen einer Selenverdampferkammer |
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WO2011067179A3 (de) * | 2009-12-04 | 2011-11-24 | Sulfurcell Solartechnik Gmbh | Vorrichtung und verfahren zur erzeugung von chalkopyrit-absorberschichten in solarzellen |
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Also Published As
Publication number | Publication date |
---|---|
CN101346822A (zh) | 2009-01-14 |
WO2007077171A3 (de) | 2007-08-23 |
US20080305247A1 (en) | 2008-12-11 |
CN101346822B (zh) | 2011-07-13 |
DE102005062977B3 (de) | 2007-09-13 |
EP1966831A2 (de) | 2008-09-10 |
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