WO2007076503A3 - Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation - Google Patents

Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation Download PDF

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Publication number
WO2007076503A3
WO2007076503A3 PCT/US2006/062605 US2006062605W WO2007076503A3 WO 2007076503 A3 WO2007076503 A3 WO 2007076503A3 US 2006062605 W US2006062605 W US 2006062605W WO 2007076503 A3 WO2007076503 A3 WO 2007076503A3
Authority
WO
WIPO (PCT)
Prior art keywords
volatile memory
sensing
basis
line precharge
step bit
Prior art date
Application number
PCT/US2006/062605
Other languages
French (fr)
Other versions
WO2007076503A2 (en
Inventor
Shou-Chang Tsao
Yan Li
Original Assignee
Sandisk Corp
Shou-Chang Tsao
Yan Li
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/323,569 external-priority patent/US7733704B2/en
Priority claimed from US11/322,427 external-priority patent/US7447094B2/en
Application filed by Sandisk Corp, Shou-Chang Tsao, Yan Li filed Critical Sandisk Corp
Priority to EP06848784A priority Critical patent/EP1966803A2/en
Publication of WO2007076503A2 publication Critical patent/WO2007076503A2/en
Publication of WO2007076503A3 publication Critical patent/WO2007076503A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Abstract

Power-saving techniques are employed in sensing a group of non-volatile memory cells in parallel. In one aspect, coupling of the memory cells to their bit lines are delayed during a precharge operation in order to reduced the cells' currents working against the precharge. In another aspect, a power-consuming precharge period is minimized by preemptively starting the sensing in a multi-pass sensing operation. High current cells not detected as a result of the premature sensing will still be able to be detected in a subsequent pass.
PCT/US2006/062605 2005-12-29 2006-12-26 Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation WO2007076503A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06848784A EP1966803A2 (en) 2005-12-29 2006-12-26 Non-volatile memory operated on the basis of a two-step bit-line precharge operation and a two-pass sensing operation

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/322,427 2005-12-29
US11/323,569 2005-12-29
US11/323,569 US7733704B2 (en) 2005-12-29 2005-12-29 Non-volatile memory with power-saving multi-pass sensing
US11/322,427 US7447094B2 (en) 2005-12-29 2005-12-29 Method for power-saving multi-pass sensing in non-volatile memory

Publications (2)

Publication Number Publication Date
WO2007076503A2 WO2007076503A2 (en) 2007-07-05
WO2007076503A3 true WO2007076503A3 (en) 2007-11-15

Family

ID=38191878

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/062605 WO2007076503A2 (en) 2005-12-29 2006-12-26 Non-volatile memory operated on. the basis of a two-step bit-line precharge operation and a two-pass sensing operation

Country Status (3)

Country Link
EP (1) EP1966803A2 (en)
TW (1) TWI315878B (en)
WO (1) WO2007076503A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425516B (en) * 2009-05-08 2014-02-01 Macronix Int Co Ltd Memory apparatus and method for operating the same
US8659963B2 (en) 2012-01-05 2014-02-25 International Business Machines Corporation Enhanced power savings for memory arrays

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56143592A (en) * 1980-04-09 1981-11-09 Toshiba Corp Semiconductor memory device
US4852064A (en) * 1987-06-27 1989-07-25 Samsung Electronics Co., Ltd. Precharge circuit for use in a semiconductor memory device
US6144600A (en) * 1998-03-16 2000-11-07 Nec Corporation Semiconductor memory device having first and second pre-charging circuits
WO2004029984A2 (en) * 2002-09-24 2004-04-08 Sandisk Corporation Non-volatile memory and its sensing method
US20050057966A1 (en) * 2003-09-16 2005-03-17 Micron Technology, Inc. Boosted substrate/tub programming for flash memories
US20050078524A1 (en) * 2003-10-09 2005-04-14 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US20050162951A1 (en) * 2004-01-23 2005-07-28 Dudeck Dennis E. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56143592A (en) * 1980-04-09 1981-11-09 Toshiba Corp Semiconductor memory device
US4852064A (en) * 1987-06-27 1989-07-25 Samsung Electronics Co., Ltd. Precharge circuit for use in a semiconductor memory device
US6144600A (en) * 1998-03-16 2000-11-07 Nec Corporation Semiconductor memory device having first and second pre-charging circuits
WO2004029984A2 (en) * 2002-09-24 2004-04-08 Sandisk Corporation Non-volatile memory and its sensing method
US20050057966A1 (en) * 2003-09-16 2005-03-17 Micron Technology, Inc. Boosted substrate/tub programming for flash memories
US20050078524A1 (en) * 2003-10-09 2005-04-14 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US20050162951A1 (en) * 2004-01-23 2005-07-28 Dudeck Dennis E. Method and apparatus for reducing leakage current in a read only memory device using shortened precharge phase

Also Published As

Publication number Publication date
TW200741736A (en) 2007-11-01
EP1966803A2 (en) 2008-09-10
WO2007076503A2 (en) 2007-07-05
TWI315878B (en) 2009-10-11

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