WO2007056171A3 - Dispositifs a changement de phase a plusieurs bornes - Google Patents

Dispositifs a changement de phase a plusieurs bornes Download PDF

Info

Publication number
WO2007056171A3
WO2007056171A3 PCT/US2006/043003 US2006043003W WO2007056171A3 WO 2007056171 A3 WO2007056171 A3 WO 2007056171A3 US 2006043003 W US2006043003 W US 2006043003W WO 2007056171 A3 WO2007056171 A3 WO 2007056171A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase change
resistance
control
active terminals
change devices
Prior art date
Application number
PCT/US2006/043003
Other languages
English (en)
Other versions
WO2007056171A2 (fr
Inventor
Antonietta Oliva
Louis C Ii Kordus
Narbeh Derhacobian
Vei-Han Chan
Original Assignee
Cswitch Corp
Antonietta Oliva
Louis C Ii Kordus
Narbeh Derhacobian
Vei-Han Chan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cswitch Corp, Antonietta Oliva, Louis C Ii Kordus, Narbeh Derhacobian, Vei-Han Chan filed Critical Cswitch Corp
Publication of WO2007056171A2 publication Critical patent/WO2007056171A2/fr
Publication of WO2007056171A3 publication Critical patent/WO2007056171A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

L'invention concerne des dispositifs à changement de phase et, notamment, des dispositifs à changement de phase à plusieurs bornes. Ces dispositifs comprenant des premières et secondes bornes actives pontées par un matériau à changement de phase dont la conductivité peut être modifiée en fonction d'un signal de commande envoyé à une électrode de commande. Cette structure permet une application dans laquelle peut être créée une connexion électrique entre les deux bornes actives, la commande de la connexion étant effectuée à l'aide d'une ou de plusieurs bornes séparées. En conséquence, la résistance de l'élément chauffant peut être accrue indépendamment de la résistance du chemin entre les deux bornes actives. Ceci permet d'utiliser des éléments chauffants plus petits qui nécessitent moins de courant pour créer la même quantité de chaleur par effet Joule par unité de surface. La résistance de l'élément chauffant n'a pas d'impact sur la résistance totale du dispositif à changement de phase. La commande de programmation peut être placée à l'extérieur du chemin principal du signal dans le dispositif à changement de phase, ce qui réduit l'impact de la capacitance et de la résistance associées du dispositif.
PCT/US2006/043003 2005-11-03 2006-11-02 Dispositifs a changement de phase a plusieurs bornes WO2007056171A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/267,788 2005-11-03
US11/267,788 US8183551B2 (en) 2005-11-03 2005-11-03 Multi-terminal phase change devices

Publications (2)

Publication Number Publication Date
WO2007056171A2 WO2007056171A2 (fr) 2007-05-18
WO2007056171A3 true WO2007056171A3 (fr) 2009-04-30

Family

ID=37995050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/043003 WO2007056171A2 (fr) 2005-11-03 2006-11-02 Dispositifs a changement de phase a plusieurs bornes

Country Status (2)

Country Link
US (4) US8183551B2 (fr)
WO (1) WO2007056171A2 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8183551B2 (en) * 2005-11-03 2012-05-22 Agale Logic, Inc. Multi-terminal phase change devices
US7507633B2 (en) * 2006-03-07 2009-03-24 International Business Machines Corproation Method and structure for improved alignment in MRAM integration
US7545667B2 (en) * 2006-03-30 2009-06-09 International Business Machines Corporation Programmable via structure for three dimensional integration technology
US7646006B2 (en) * 2006-03-30 2010-01-12 International Business Machines Corporation Three-terminal cascade switch for controlling static power consumption in integrated circuits
US7411818B1 (en) * 2007-02-07 2008-08-12 International Business Machines Corporation Programmable fuse/non-volatile memory structures using externally heated phase change material
US7969769B2 (en) * 2007-03-15 2011-06-28 Ovonyx, Inc. Multi-terminal chalcogenide logic circuits
US7687309B2 (en) * 2007-06-28 2010-03-30 International Business Machines Corporation CMOS-process-compatible programmable via device
US7772582B2 (en) 2007-07-11 2010-08-10 International Business Machines Corporation Four-terminal reconfigurable devices
US7659534B2 (en) * 2007-08-03 2010-02-09 International Business Machines Corporation Programmable via devices with air gap isolation
US7969770B2 (en) * 2007-08-03 2011-06-28 International Business Machines Corporation Programmable via devices in back end of line level
US7633079B2 (en) * 2007-09-06 2009-12-15 International Business Machines Corporation Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material
US7811851B2 (en) * 2007-09-28 2010-10-12 Freescale Semiconductor, Inc. Phase change memory structures
US8119528B2 (en) * 2008-08-19 2012-02-21 International Business Machines Corporation Nanoscale electrodes for phase change memory devices
KR101108193B1 (ko) * 2008-12-16 2012-01-31 한국전자통신연구원 상변화층을 포함하는 비휘발성 프로그래머블 소자 및 그 제조 방법
US20100163826A1 (en) * 2008-12-30 2010-07-01 Stmicroelectronics S.R.L. Method for active pinch off of an ovonic unified memory element
US20120033479A1 (en) * 2010-08-06 2012-02-09 Lsi Corporation Modification of logic by morphological manipulation of a semiconductor resistive element
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
HUP1200249A2 (hu) * 2012-04-27 2014-02-28 Budapesti Mueszaki Es Gazdasagtudomanyi Egyetem Logikai elrendezés
GB2505429A (en) * 2012-08-29 2014-03-05 Ibm Semiconductor stack comprising plurality of phase-change memory (PCM) cells and performing a logic operation
US9257647B2 (en) * 2013-03-14 2016-02-09 Northrop Grumman Systems Corporation Phase change material switch and method of making the same
WO2015164640A1 (fr) * 2014-04-23 2015-10-29 University Of Connecticut Dispositif à changement de phase reconfigurable
GB201414427D0 (en) 2014-08-14 2014-10-01 Ibm Memory device and method for thermoelectric heat confinement
US9865798B2 (en) 2015-02-24 2018-01-09 Qualcomm Incorporated Electrode structure for resistive memory device
US10700270B2 (en) 2016-06-21 2020-06-30 Northrop Grumman Systems Corporation PCM switch and method of making the same
FR3071364B1 (fr) * 2017-09-19 2019-09-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Systeme de decouplage rf/dc pour commutateurs rf a base de materiau a changement de phase
US10707125B2 (en) * 2018-08-14 2020-07-07 Newport Fab, Llc Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
KR102557405B1 (ko) 2018-08-24 2023-07-20 삼성전자주식회사 가변 저항 메모리 소자 및 이의 제조 방법
US10897239B1 (en) 2019-09-06 2021-01-19 International Business Machines Corporation Granular variable impedance tuning
US11812676B2 (en) 2020-03-24 2023-11-07 International Business Machines Corporation Multi-terminal phase change memory device
HUP2000211A1 (hu) * 2020-06-29 2022-01-28 Budapesti Mueszaki Es Gazdasagtudomanyi Egyetem Termikus-elektromos integrált logikai áramkör és alkalmazása
US11546010B2 (en) 2021-02-16 2023-01-03 Northrop Grumman Systems Corporation Hybrid high-speed and high-performance switch system
US11588105B2 (en) 2021-03-11 2023-02-21 International Business Machines Corporation Phase-change memory device with reduced programming voltage
EP4125214A1 (fr) * 2021-07-26 2023-02-01 Infineon Technologies AG Dispositif de commutation à changement de phase et procédé de fonctionnement d'un dispositif de commutation à changement de phase
US20230081603A1 (en) * 2021-09-13 2023-03-16 International Business Machines Corporation Three terminal phase change memory with self-aligned contacts

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US20030223285A1 (en) * 2001-12-27 2003-12-04 Stmicroelectronics S.R.L. Single supply voltage, nonvolatile phase change memory device with cascoded column selection and simultaneous word read/write operations
US20040042367A1 (en) * 1998-10-12 2004-03-04 Hidehiko Kando Information recording method, information recording medium, and information recording apparatus
US20050062035A1 (en) * 2003-06-09 2005-03-24 Nantero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US20050142731A1 (en) * 2002-12-13 2005-06-30 Wicker Guy C. Lateral phase change memory and method therefor

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US6969869B2 (en) * 2001-08-30 2005-11-29 Ovonyx, Inc. Programmable resistance memory element with indirect heating
US6448576B1 (en) * 2001-08-30 2002-09-10 Bae Systems Information And Electronic Systems Integration, Inc. Programmable chalcogenide fuse within a semiconductor device
JP3711459B2 (ja) 2002-06-05 2005-11-02 松下電器産業株式会社 不揮発性メモリ回路の駆動方法
US6969867B2 (en) * 2003-03-10 2005-11-29 Energy Conversion Devices, Inc. Field effect chalcogenide devices
US7085155B2 (en) * 2003-03-10 2006-08-01 Energy Conversion Devices, Inc. Secured phase-change devices
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US6967344B2 (en) * 2003-03-10 2005-11-22 Energy Conversion Devices, Inc. Multi-terminal chalcogenide switching devices
US7113426B2 (en) 2003-03-28 2006-09-26 Nantero, Inc. Non-volatile RAM cell and array using nanotube switch position for information state
US7129560B2 (en) * 2003-03-31 2006-10-31 International Business Machines Corporation Thermal memory cell and memory device including the thermal memory cell
US6987688B2 (en) 2003-06-11 2006-01-17 Ovonyx, Inc. Die customization using programmable resistance memory elements
JP2005093619A (ja) 2003-09-16 2005-04-07 Sumio Hosaka 記録素子
DE60327527D1 (de) 2003-09-23 2009-06-18 St Microelectronics Srl Ein verbessertes feldprogrammierbares Gate-Array
KR100564608B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
DE102004037450B4 (de) * 2004-08-02 2009-04-16 Qimonda Ag Verfahren zum Betrieb eines Schalt-Bauelements
US7129749B1 (en) 2004-10-27 2006-10-31 Lattice Semiconductor Corporation Programmable logic device having a configurable DRAM with transparent refresh
US20060097342A1 (en) * 2004-11-08 2006-05-11 Ward Parkinson Programmable matrix array with phase-change material
US7646630B2 (en) * 2004-11-08 2010-01-12 Ovonyx, Inc. Programmable matrix array with chalcogenide material
US7106096B2 (en) * 2004-11-11 2006-09-12 International Business Machines Corporation Circuit and method of controlling integrated circuit power consumption using phase change switches
JP4783045B2 (ja) * 2004-11-17 2011-09-28 株式会社東芝 スイッチング素子
US7391642B2 (en) * 2005-01-25 2008-06-24 Intel Corporation Multilevel programming of phase change memory cells
US20060249724A1 (en) * 2005-05-06 2006-11-09 International Business Machines Corporation Method and structure for Peltier-controlled phase change memory
US7221579B2 (en) * 2005-06-13 2007-05-22 International Business Machines Corporation Method and structure for high performance phase change memory
US7388273B2 (en) * 2005-06-14 2008-06-17 International Business Machines Corporation Reprogrammable fuse structure and method
US7494849B2 (en) * 2005-11-03 2009-02-24 Cswitch Inc. Methods for fabricating multi-terminal phase change devices
US8183551B2 (en) * 2005-11-03 2012-05-22 Agale Logic, Inc. Multi-terminal phase change devices
US7646006B2 (en) * 2006-03-30 2010-01-12 International Business Machines Corporation Three-terminal cascade switch for controlling static power consumption in integrated circuits
US7394089B2 (en) * 2006-08-25 2008-07-01 International Business Machines Corporation Heat-shielded low power PCM-based reprogrammable EFUSE device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US20040042367A1 (en) * 1998-10-12 2004-03-04 Hidehiko Kando Information recording method, information recording medium, and information recording apparatus
US20030223285A1 (en) * 2001-12-27 2003-12-04 Stmicroelectronics S.R.L. Single supply voltage, nonvolatile phase change memory device with cascoded column selection and simultaneous word read/write operations
US20050142731A1 (en) * 2002-12-13 2005-06-30 Wicker Guy C. Lateral phase change memory and method therefor
US20050062035A1 (en) * 2003-06-09 2005-03-24 Nantero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Also Published As

Publication number Publication date
US8178380B2 (en) 2012-05-15
US8486745B2 (en) 2013-07-16
US8183551B2 (en) 2012-05-22
US20070096071A1 (en) 2007-05-03
WO2007056171A2 (fr) 2007-05-18
US20100091560A1 (en) 2010-04-15
US8822967B2 (en) 2014-09-02
US20070235707A1 (en) 2007-10-11
US20120182794A1 (en) 2012-07-19

Similar Documents

Publication Publication Date Title
WO2007056171A3 (fr) Dispositifs a changement de phase a plusieurs bornes
WO2007056258A3 (fr) Procedes de fabrication de dispositifs a changement de phase a plusieurs bornes
TWI263365B (en) Multilayered phase change memory
WO2013003856A3 (fr) Rram en silicium amorphe comprenant dispositif non linéaire et fonctionnement associé
WO2009050833A1 (fr) Elément de mémoire non volatile et dispositif semi-conducteur non volatile utilisant l'élément de mémoire non volatile
TW200723633A (en) Overvoltage protection devices including wafer of varistor material
WO2004057676A3 (fr) Dispositif electrique a materiau a changement de phase et radiateur parallele
TW200620535A (en) Resistive memory element
WO2006115569A3 (fr) Chauffe-eau instantane a electrodes conductrices en plastique avec coefficient positif de temperature
WO2008126366A1 (fr) Élément à résistance variable, élément de commutation non volatile et dispositif mémoire à résistance variable
TW200713509A (en) Reproducible resistance variable insulating memory devices and methods for forming same
WO2004057618A3 (fr) Dispositif electrique comprenant un materiau a changement de phase et son procede de fabrication
WO2005043684A3 (fr) Connexion electrique de fils conducteurs flexibles dans un corps flexible
TW200711120A (en) Phase change memory with reduced programming current
WO2009114177A3 (fr) Cellule de mémoire de changement de phase à structure de resserrement
EP1873758A3 (fr) Capteur magnéto-résistif ayant une structure pour activer et désactiver le circuit de prévention des décharges
WO2008102718A1 (fr) Dispositif de mémoire semi-conducteur
WO2009072076A3 (fr) Détection de courant sur un transistor mosfet
TW200723508A (en) Phase-change memory device and method of manufacturing same
EP1643508A3 (fr) Elément de mémoire non volatile à résistance programmable
WO2010078072A3 (fr) Procédé et système pour réduire la durée de réaction dans les applications de chauffage d'eau à surpresseur
EP2618393A3 (fr) Dispositif de mémoire à commutation de conductance dans des jonctions polymère/électrolyte
NO20052517D0 (no) Anordning for beskyttelse mot stromningssvingninger med mobil elektrode
JP2014510933A5 (fr)
WO2008146461A1 (fr) Dispositif de stockage non volatil, son procédé de fabrication, et dispositif semi-conducteur non volatil utilisant le dispositif de stockage non volatil

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06836896

Country of ref document: EP

Kind code of ref document: A2