DE60327527D1 - Ein verbessertes feldprogrammierbares Gate-Array - Google Patents
Ein verbessertes feldprogrammierbares Gate-ArrayInfo
- Publication number
- DE60327527D1 DE60327527D1 DE60327527T DE60327527T DE60327527D1 DE 60327527 D1 DE60327527 D1 DE 60327527D1 DE 60327527 T DE60327527 T DE 60327527T DE 60327527 T DE60327527 T DE 60327527T DE 60327527 D1 DE60327527 D1 DE 60327527D1
- Authority
- DE
- Germany
- Prior art keywords
- programmable gate
- gate array
- field programmable
- improved field
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
- H03K19/17748—Structural details of configuration resources
- H03K19/1776—Structural details of configuration resources for memories
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/037—Bistable circuits
- H03K3/0375—Bistable circuits provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Logic Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03021455A EP1519489B1 (de) | 2003-09-23 | 2003-09-23 | Ein verbessertes feldprogrammierbares Gate-Array |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60327527D1 true DE60327527D1 (de) | 2009-06-18 |
Family
ID=34178479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60327527T Expired - Lifetime DE60327527D1 (de) | 2003-09-23 | 2003-09-23 | Ein verbessertes feldprogrammierbares Gate-Array |
Country Status (3)
Country | Link |
---|---|
US (1) | US7307451B2 (de) |
EP (1) | EP1519489B1 (de) |
DE (1) | DE60327527D1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004287475A (ja) * | 2003-01-27 | 2004-10-14 | Fujitsu Ten Ltd | 電子制御装置および電子駆動装置 |
US7499315B2 (en) * | 2003-06-11 | 2009-03-03 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
US7135886B2 (en) * | 2004-09-20 | 2006-11-14 | Klp International, Ltd. | Field programmable gate arrays using both volatile and nonvolatile memory cell properties and their control |
US20060256608A1 (en) * | 2005-05-11 | 2006-11-16 | Spansion Llc | Resistive memory device with improved data retention and reduced power |
US7368789B1 (en) * | 2005-06-13 | 2008-05-06 | Actel Corporation | Non-volatile programmable memory cell and array for programmable logic array |
DE102005030142B3 (de) * | 2005-06-28 | 2006-12-21 | Infineon Technologies Ag | Bistabile Kippstufe mit nichtflüchtiger Zustandsspeicherung |
US7746682B2 (en) | 2005-11-03 | 2010-06-29 | Agata Logic Inc. | SEU hardened latches and memory cells using programmable resistance devices |
US7511532B2 (en) * | 2005-11-03 | 2009-03-31 | Cswitch Corp. | Reconfigurable logic structures |
US7675765B2 (en) | 2005-11-03 | 2010-03-09 | Agate Logic, Inc. | Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM |
US8183551B2 (en) | 2005-11-03 | 2012-05-22 | Agale Logic, Inc. | Multi-terminal phase change devices |
US7494849B2 (en) | 2005-11-03 | 2009-02-24 | Cswitch Inc. | Methods for fabricating multi-terminal phase change devices |
TWI470628B (zh) * | 2005-12-24 | 2015-01-21 | Ovonyx Inc | 具硫屬化物材料之可程式化矩陣陣列 |
DE102006016514A1 (de) * | 2006-04-07 | 2007-10-18 | Infineon Technologies Ag | Schaltung und Verfahren zum Konfigurieren einer Schaltung |
US8264667B2 (en) * | 2006-05-04 | 2012-09-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method using interferometric and other exposure |
US8161227B1 (en) | 2006-10-30 | 2012-04-17 | Siliconsystems, Inc. | Storage subsystem capable of programming field-programmable devices of a target computer system |
EP2084613A4 (de) * | 2006-11-01 | 2009-10-21 | Gumbo Logic Inc | Nichtflüchtiger fallen-ladungs-schaltverbinder für programmierbare logik |
EP2105015B1 (de) * | 2006-11-20 | 2020-04-22 | Codian Limited | Hardwarearchitektur für videokonferenzen |
US7990761B2 (en) * | 2008-03-31 | 2011-08-02 | Ovonyx, Inc. | Immunity of phase change material to disturb in the amorphous phase |
US8138791B1 (en) * | 2010-01-27 | 2012-03-20 | Altera Corporation | Stressed transistors with reduced leakage |
US8532100B2 (en) | 2010-10-19 | 2013-09-10 | Cisco Technology, Inc. | System and method for data exchange in a heterogeneous multiprocessor system |
US8497705B2 (en) * | 2010-11-09 | 2013-07-30 | Macronix International Co., Ltd. | Phase change device for interconnection of programmable logic device |
KR101802945B1 (ko) * | 2011-06-27 | 2017-12-29 | 삼성전자주식회사 | 논리 장치 및 이를 포함하는 반도체 패키지 |
US10236888B2 (en) * | 2016-03-29 | 2019-03-19 | Arm Ltd. | Correlated electron switch device |
US10199105B2 (en) | 2016-05-12 | 2019-02-05 | Crossbar, Inc. | Non-volatile resistive memory configuration cell for field programmable gate array |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2010122A1 (en) * | 1989-06-21 | 1990-12-21 | Makoto Sakamoto | Integrated circuit including programmable circuit |
US5371422A (en) * | 1991-09-03 | 1994-12-06 | Altera Corporation | Programmable logic device having multiplexers and demultiplexers randomly connected to global conductors for interconnections between logic elements |
US5353248A (en) * | 1992-04-14 | 1994-10-04 | Altera Corporation | EEPROM-backed FIFO memory |
US6130550A (en) * | 1993-01-08 | 2000-10-10 | Dynalogic | Scaleable padframe interface circuit for FPGA yielding improved routability and faster chip layout |
US6002268A (en) * | 1993-01-08 | 1999-12-14 | Dynachip Corporation | FPGA with conductors segmented by active repeaters |
US5440182A (en) * | 1993-10-22 | 1995-08-08 | The Board Of Trustees Of The Leland Stanford Junior University | Dynamic logic interconnect speed-up circuit |
US5581501A (en) * | 1995-08-17 | 1996-12-03 | Altera Corporation | Nonvolatile SRAM cells and cell arrays |
US6029236A (en) * | 1997-01-28 | 2000-02-22 | Altera Corporation | Field programmable gate array with high speed SRAM based configurable function block configurable as high performance logic or block of SRAM |
US5966027A (en) * | 1997-09-30 | 1999-10-12 | Cypress Semiconductor Corp. | Symmetric logic block input/output scheme |
US6097988A (en) * | 1998-02-10 | 2000-08-01 | Advanced Micro Devices, Inc. | Logic system and method employing multiple configurable logic blocks and capable of implementing a state machine using a minimum amount of configurable logic |
US6058041A (en) * | 1998-12-23 | 2000-05-02 | Honeywell Inc. | SEU hardening circuit |
JP3754221B2 (ja) * | 1999-03-05 | 2006-03-08 | ローム株式会社 | マルチチップ型半導体装置 |
US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
JP4491870B2 (ja) * | 1999-10-27 | 2010-06-30 | ソニー株式会社 | 不揮発性メモリの駆動方法 |
US6594192B1 (en) * | 2000-08-31 | 2003-07-15 | Stmicroelectronics, Inc. | Integrated volatile and non-volatile memory |
US6356478B1 (en) * | 2000-12-21 | 2002-03-12 | Actel Corporation | Flash based control for field programmable gate array |
US6590807B2 (en) * | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US20030071651A1 (en) * | 2001-09-13 | 2003-04-17 | Extensil, Inc. | Memory controlled signal steering and wave shaping circuit as a universal connector |
CN100337333C (zh) * | 2002-04-10 | 2007-09-12 | 松下电器产业株式会社 | 非易失性触发器 |
-
2003
- 2003-09-23 DE DE60327527T patent/DE60327527D1/de not_active Expired - Lifetime
- 2003-09-23 EP EP03021455A patent/EP1519489B1/de not_active Expired - Fee Related
-
2004
- 2004-09-23 US US10/948,079 patent/US7307451B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7307451B2 (en) | 2007-12-11 |
EP1519489A1 (de) | 2005-03-30 |
EP1519489B1 (de) | 2009-05-06 |
US20050062497A1 (en) | 2005-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |