WO2007052860A1 - Hollow diamond shells filled compostte materials - Google Patents

Hollow diamond shells filled compostte materials Download PDF

Info

Publication number
WO2007052860A1
WO2007052860A1 PCT/KR2005/004305 KR2005004305W WO2007052860A1 WO 2007052860 A1 WO2007052860 A1 WO 2007052860A1 KR 2005004305 W KR2005004305 W KR 2005004305W WO 2007052860 A1 WO2007052860 A1 WO 2007052860A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
composite material
thermal interface
thermal
shell
Prior art date
Application number
PCT/KR2005/004305
Other languages
French (fr)
Inventor
Jae Kap Lee
Jae Gwan Park
Original Assignee
Korea Institute Of Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Institute Of Science And Technology filed Critical Korea Institute Of Science And Technology
Publication of WO2007052860A1 publication Critical patent/WO2007052860A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00—Use of ingredients characterised by shape
    • C08K7/22—Expanded, porous or hollow particles
    • C08K7/24—Expanded, porous or hollow particles inorganic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2227—Oxides; Hydroxides of metals of aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • C08K2003/282—Binary compounds of nitrogen with aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • C08K2003/382—Boron-containing compounds and nitrogen
    • C08K2003/385—Binary compounds of nitrogen with boron

Definitions

  • the present invention relates to a composite material for a thermal interface material (TIM) of a high-performance semiconductor device such as a multi chip module (MCM) and for a structural material with lightweight and high strength.
  • TIM thermal interface material
  • MCM multi chip module
  • the heat generated from a semiconductor device is generally removed by a thermal spreader which is thermally in contact with an upper surface of the device.
  • the thermal contact is made by a thermal interface material.
  • a layer of the thermal interface material is formed such that ceramic particles (filling material) of 40-60% is filled in a polymer resin such as epoxy, and such a thermal interface material layer contributes to a smooth heat transfer from the device to the thermal spreader. Accordingly, the thermal interface material should have a good heat transfer property.
  • the heat transfer property of the layer of the thermal interface material is represented by thermal resistance (mm 2 K/W) (the sum total of bulk thermal resistance of a resin and a filling material and contact thermal resistance of upper and lower interfaces) of the layer. As the value of the thermal resistance gets smaller, the better the heat transfer property is.
  • thermal conductivity of the thermal interface material layer depends on the thermal conductivity of a filling material and an epoxy base material that constitutes the thermal interface material layer. Because the thermal conductivity of epoxy used is generally a very low value of 0.5W/mK or less, a filling material with high thermal conductivity should be used to improve the thermal conductivity of the thermal interface material layer.
  • Spherical silica (SiO 2 ) is used as a general filling material for devices such as a flip chip and a semiconductor device.
  • a filling material with a relatively good thermal conductivity such as boron nitride (BN), aluminum nitride (AIN) and alumina (AI 2 O 3 ) can be used.
  • BN boron nitride
  • AIN aluminum nitride
  • AI 2 O 3 alumina
  • other properties of the filling material required are a high electric resistance, a low dielectric constant, a low dielectric loss, a low linear thermal expansion coefficient, a low density and a high degree of hardness.
  • the properties of main filling materials are indicated in following table 1. [Table 1] property comparison of main filling materials
  • the existing filling materials for heat transfer (boron nitride (BN), aluminum nitride (AIN) and alumina (AI 2 Os)), have better thermal conductivities than silica, however they have a problem of having high dielectric constants and thermal expansion coefficients, which are very important properties of a filling material. Such problem may cause an excessive energy loss or thermal damage to the thermal interface material layer. Additionally, there is a limit to the amount of the heat transfer that could be achieved by the existing filing materials.
  • boron nitride (BN), aluminum nitride (AIN) and alumina (AI 2 Os) have better thermal conductivities than silica, however they have a problem of having high dielectric constants and thermal expansion coefficients, which are very important properties of a filling material. Such problem may cause an excessive energy loss or thermal damage to the thermal interface material layer. Additionally, there is a limit to the amount of the heat transfer that could be achieved by the existing filing materials.
  • an object of the present invention is to provide a new composite material for a thermal interface material having a low dielectric constant and a good physical property.
  • a composite material for a thermal interface material is provided by mixing a hollow diamond shell of a micro-size with a polymer resin base material such as epoxy.
  • the size of the diamond shell may fall within a range of, for example, 1 ⁇ 5,000 ⁇ m, and a base material selected from epoxy, silicon and glassy bond may be used.
  • the composite material according to the present invention can change its property due to micro air space within a geometric diamond shell mixed with a polymer resin.
  • Figure 1 is a sectional view of a diamond shell-filled thermal interface material layer.
  • Figure 1 is a sectional view of a composite material used as a thermal interface material according to the present invention.
  • the composite material 1 according to the present invention is a mixture of a diamond shell 1-1 , which is a filling material, and a polymer resin 1-2, and is formed between a heat source 2 and a thermal spreader 3.
  • a semiconductor device or the like may be a heat source, and a heat flow 4 occurs from the heat source to the thermal spreader.
  • diamond has properties superior to those of other materials with the exception to the dielectric constant and density. Also, the dielectric constant and density can be decreased by using a hollow diamond shell of the present invention.
  • the dielectric constant of the air is 1 , the dielectric constant of the hollow diamond shell decreases. The extent of the decrease gets smaller as the thickness of a wall of the shell gets smaller when its size is fixed or as its size gets smaller where the thickness of the wall is fixed.
  • the dielectric constant would fall within a range of 5.7-1 , wherein 5.7 is a dielectric constant of diamond and 1 is a dielectric constant of the air. In that case, it is impossible to measure a dielectric constant of each diamond shell, and only a dielectric constant of an entire diamond shell filled in the composite material can be obtained.
  • the density of the shell wall is 0.51-1.84 g/cc, which is very small, and the density can be controlled upon changing the thickness of the shell wall.
  • the diamond shell is prepared by a combination of the CVD diamond synthesis and a base material etching technology.
  • a diamond layer is deposited onto a surface of a spherical porous silica particle having a predetermined size by the CVD technology, thereby forming a diamond film having a very small pore.
  • a hollow porous diamond shell is obtained by etching, from the manufactured diamond film/silica composite body, the porous silica particle therein. Forming the pore at the diamond film and controlling its size can be established during pretreatment or synthesis for deposition of a diamond film.
  • the etching is made by performing an acid treatment on a base material of the composite body in, for example, boiling Murakami solution for about 10 minutes.
  • the etching solution may reach the silica base material through a small gap formed on the diamond film, and then, the base material absorbs the etching solution and is melted away by itself by the capillary phenomenon of the porous base material.
  • the hollow diamond shell can be manufactured.
  • the method of manufacturing the diamond shell is not limited by this process.
  • the prepared diamond shell is mixed with an epoxy base material to form a composite material to be used as a thermal interface material.
  • a volume of the diamond shell occupying the composite material is 40-60%, a thickness of the composite material falls within a range of about 50 ⁇ 200 ⁇ m, and the size of the diamond shell, the filling materials, falls within a range of several micrometers ( ⁇ m) ⁇ 1/2 of a layer thickness, but those ranges are not exclusive.
  • the filling material a diamond shell, boron nitride, alumina, aluminum nitride, silica or the like may be used in combination.
  • Such a hollow diamond shell-filled composite material can be used as an underfill of a flip chip, an encapsulation material or as a lightweight but high- strength material to be used for a spacecraft, as an example.
  • Embodiment 1 A diamond shell having a diameter of 30 ⁇ 40 ⁇ m, a wall thickness of 3 ⁇ 5 ⁇ m and one or a multiple number of pores of nano-sized (1-1 ,000 nm) gaps was prepared.
  • the diamond shell was manufactured by depositing a diamond film on a porous silica base material particle having a diameter of 20-30 ⁇ m by using a multi-cathode DC power plasma diamond synthesizer, followed by removing the base material by soaking in a boiling Murakami solution.
  • the synthesis conditions of diamond were: input power of 15 kW, a methane composition of 10% within a hydrogen gas, the pressure of 100 Torr, and a gas flow rate of 200 seem. The time period of synthesis was one hour.
  • the diamond shell manufactured from Embodiment 1 was mixed with an epoxy base material (density of 1.5 g/cm 2 , heat conductivity of 0.2 W/mK) having a dielectric property, thereby making a composite material (thermal interface material).
  • the composite material has an area of 10 mm x 10 mm, a height of 5 mm, and the volume density of the diamond shell was 50%.
  • a composite material with the same volume and size were manufactured by using silica (particle size of 3 ⁇ 20 ⁇ m), alumina (particle size of 1 ⁇ 40 ⁇ m) and boron nitride (particle size of 50 ⁇ m).
  • the properties of the composite materials are indicated in the following Table 2.
  • the diamond shell composite material has the highest thermal conductivity and the lowest dielectric constant and density. This indicates that the diamond shell composite material is superior to other composite materials. [Table 2] Property comparison of thermal interface materials
  • the present invention can provide a thermal interface material having excellent thermal and dielectric properties that overcomes the limitations of an existing material, by using a micro-sized diamond shell-filled composite material in a polymer resin as a thermal interface material of a semiconductor device.
  • the composite material according to the present invention can be used as a thermal interface material of a device which may have thermal problems, such as the second generation high-performance CPU and MCM.
  • the composite material may be used as an underfill of a flip chip or an encapsulation material, and also can be used as a lightweight but high-strength material that can be used for a spacecraft, as an example.

Abstract

Disclosed is a composite material in which a hollow diamond shell is filled in a base material such as a polymer resin. A composite material, a highly-efficient thermal interface material that overcomes limits of an existing material, is provided by using a hollow diamond shell particle having a size of a few micrometers or tens of micrometers as a filling material of a thermal interface material (TIM) which is one of core materials of a semiconductor device. This composite material may be used as an underfill of a flip chip or an encapsulation filling material or may be used as a lightweight high-strength material for a space ship or the like.

Description

HOLLOW DIAMOND SHELLS FILLED COMPOSITE MATERIALS
TECHNICAL FIELD
The present invention relates to a composite material for a thermal interface material (TIM) of a high-performance semiconductor device such as a multi chip module (MCM) and for a structural material with lightweight and high strength.
BACKGROUND ART As in Moore's Law, degree of integration of a microchip in a semiconductor industry has been doubled for the last 12-18 months. In order to improve the performance of a device thereof, development of an integrated-device manufacturing technology should be achieved by production of a very small line width, development of a conductor with small resistance and a dielectric film, finding a solution to a heat generation problem from the device, and using a filling material with a low dielectric constant.
The heat generated from a semiconductor device (heat source) is generally removed by a thermal spreader which is thermally in contact with an upper surface of the device. The thermal contact is made by a thermal interface material. A layer of the thermal interface material is formed such that ceramic particles (filling material) of 40-60% is filled in a polymer resin such as epoxy, and such a thermal interface material layer contributes to a smooth heat transfer from the device to the thermal spreader. Accordingly, the thermal interface material should have a good heat transfer property. The heat transfer property of the layer of the thermal interface material is represented by thermal resistance (mm2K/W) (the sum total of bulk thermal resistance of a resin and a filling material and contact thermal resistance of upper and lower interfaces) of the layer. As the value of the thermal resistance gets smaller, the better the heat transfer property is. The thermal resistance (R) is represented by the following equation. R=LVkA
L: thickness of thermal interface material layer k: thermal conductivity of thermal interface material layer
A: area of thermal interface material As shown in the above equation, when a certain thermal interface material layer is uniform in size, the thermal resistance increases in inverse proportion to the thermal conductivity of the thermal interface material layer. The thermal conductivity of the thermal interface material layer depends on the thermal conductivity of a filling material and an epoxy base material that constitutes the thermal interface material layer. Because the thermal conductivity of epoxy used is generally a very low value of 0.5W/mK or less, a filling material with high thermal conductivity should be used to improve the thermal conductivity of the thermal interface material layer.
Spherical silica (SiO2) is used as a general filling material for devices such as a flip chip and a semiconductor device. However, if a high heat transfer is required because of the low thermal conductivity of silica, a filling material with a relatively good thermal conductivity, such as boron nitride (BN), aluminum nitride (AIN) and alumina (AI2O3), can be used. Besides the thermal conductivity, other properties of the filling material required are a high electric resistance, a low dielectric constant, a low dielectric loss, a low linear thermal expansion coefficient, a low density and a high degree of hardness. The properties of main filling materials are indicated in following table 1. [Table 1] property comparison of main filling materials
Figure imgf000005_0001
As seen in Table 1 , the existing filling materials for heat transfer, (boron nitride (BN), aluminum nitride (AIN) and alumina (AI2Os)), have better thermal conductivities than silica, however they have a problem of having high dielectric constants and thermal expansion coefficients, which are very important properties of a filling material. Such problem may cause an excessive energy loss or thermal damage to the thermal interface material layer. Additionally, there is a limit to the amount of the heat transfer that could be achieved by the existing filing materials.
DISCLOSURE OF THE INVENTION
Therefore, an object of the present invention is to provide a new composite material for a thermal interface material having a low dielectric constant and a good physical property.
To achieve these and other advantages in accordance with the object of the present invention, as embodied and broadly described herein, a composite material for a thermal interface material is provided by mixing a hollow diamond shell of a micro-size with a polymer resin base material such as epoxy.
The size of the diamond shell may fall within a range of, for example, 1~5,000μm, and a base material selected from epoxy, silicon and glassy bond may be used.
The composite material according to the present invention can change its property due to micro air space within a geometric diamond shell mixed with a polymer resin. The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWING
The accompanying drawing, which is included to provide a further understanding of the invention and is incorporated in and constitute a unit of this specification, illustrates an embodiment of the invention and together with the description serve to explain the principles of the invention. In the drawing:
Figure 1 is a sectional view of a diamond shell-filled thermal interface material layer.
MODES FOR CARRYING OUT THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Figure 1 is a sectional view of a composite material used as a thermal interface material according to the present invention. The composite material 1 according to the present invention is a mixture of a diamond shell 1-1 , which is a filling material, and a polymer resin 1-2, and is formed between a heat source 2 and a thermal spreader 3. A semiconductor device or the like may be a heat source, and a heat flow 4 occurs from the heat source to the thermal spreader.
As indicated in Table 1 , diamond has properties superior to those of other materials with the exception to the dielectric constant and density. Also, the dielectric constant and density can be decreased by using a hollow diamond shell of the present invention.
Since the dielectric constant of the air is 1 , the dielectric constant of the hollow diamond shell decreases. The extent of the decrease gets smaller as the thickness of a wall of the shell gets smaller when its size is fixed or as its size gets smaller where the thickness of the wall is fixed. Here, the dielectric constant would fall within a range of 5.7-1 , wherein 5.7 is a dielectric constant of diamond and 1 is a dielectric constant of the air. In that case, it is impossible to measure a dielectric constant of each diamond shell, and only a dielectric constant of an entire diamond shell filled in the composite material can be obtained. Also, if the thickness of the shell wall corresponds to 5-10 % of the shell size (diameter 10 μm), the density of the shell wall is 0.51-1.84 g/cc, which is very small, and the density can be controlled upon changing the thickness of the shell wall.
The diamond shell is prepared by a combination of the CVD diamond synthesis and a base material etching technology. In other words, when manufacturing the diamond shell, a diamond layer is deposited onto a surface of a spherical porous silica particle having a predetermined size by the CVD technology, thereby forming a diamond film having a very small pore. A hollow porous diamond shell is obtained by etching, from the manufactured diamond film/silica composite body, the porous silica particle therein. Forming the pore at the diamond film and controlling its size can be established during pretreatment or synthesis for deposition of a diamond film. The etching is made by performing an acid treatment on a base material of the composite body in, for example, boiling Murakami solution for about 10 minutes. Here, the etching solution may reach the silica base material through a small gap formed on the diamond film, and then, the base material absorbs the etching solution and is melted away by itself by the capillary phenomenon of the porous base material. Through this process, the hollow diamond shell can be manufactured. However, the method of manufacturing the diamond shell is not limited by this process.
The prepared diamond shell is mixed with an epoxy base material to form a composite material to be used as a thermal interface material. A volume of the diamond shell occupying the composite material is 40-60%, a thickness of the composite material falls within a range of about 50~200μm, and the size of the diamond shell, the filling materials, falls within a range of several micrometers (μm) ~ 1/2 of a layer thickness, but those ranges are not exclusive. Also, as the filling material, a diamond shell, boron nitride, alumina, aluminum nitride, silica or the like may be used in combination. Such a hollow diamond shell-filled composite material can be used as an underfill of a flip chip, an encapsulation material or as a lightweight but high- strength material to be used for a spacecraft, as an example.
Embodiment 1 A diamond shell having a diameter of 30~40μm, a wall thickness of 3~5μm and one or a multiple number of pores of nano-sized (1-1 ,000 nm) gaps was prepared. The diamond shell was manufactured by depositing a diamond film on a porous silica base material particle having a diameter of 20-30 μm by using a multi-cathode DC power plasma diamond synthesizer, followed by removing the base material by soaking in a boiling Murakami solution. The synthesis conditions of diamond were: input power of 15 kW, a methane composition of 10% within a hydrogen gas, the pressure of 100 Torr, and a gas flow rate of 200 seem. The time period of synthesis was one hour. A dielectric constant of a free standing diamond film (size 1cm2) having a thickness of 500 μm, which was obtained under the above-mentioned conditions of diamond synthesis, was 5.9, and its dielectric loss was 0.0067. Accordingly, it could be predicted that the dielectric properties of a diamond film constituting a diamond shell would be similar thereto.
Embodiment 2
The diamond shell manufactured from Embodiment 1 was mixed with an epoxy base material (density of 1.5 g/cm2, heat conductivity of 0.2 W/mK) having a dielectric property, thereby making a composite material (thermal interface material). The composite material has an area of 10 mm x 10 mm, a height of 5 mm, and the volume density of the diamond shell was 50%. In order to compare, a composite material with the same volume and size were manufactured by using silica (particle size of 3~20 μm), alumina (particle size of 1~40 μm) and boron nitride (particle size of 50 μm). The properties of the composite materials are indicated in the following Table 2. The diamond shell composite material has the highest thermal conductivity and the lowest dielectric constant and density. This indicates that the diamond shell composite material is superior to other composite materials. [Table 2] Property comparison of thermal interface materials
Figure imgf000010_0001
As described above, the present invention can provide a thermal interface material having excellent thermal and dielectric properties that overcomes the limitations of an existing material, by using a micro-sized diamond shell-filled composite material in a polymer resin as a thermal interface material of a semiconductor device. Also, the composite material according to the present invention can be used as a thermal interface material of a device which may have thermal problems, such as the second generation high-performance CPU and MCM. Also, the composite material may be used as an underfill of a flip chip or an encapsulation material, and also can be used as a lightweight but high-strength material that can be used for a spacecraft, as an example.
As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiments are not limited by any of the details of the foregoing description, unless otherwise specified, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the metes and bounds of the claims, or equivalence of such metes and bounds are therefore intended to be embraced by the appended claims.

Claims

1. A composite material for a thermal interface material comprising a hollow diamond shell filled in a polymer resin base material.
2. The composite material of claim 1 , wherein the diamond shell is 1~5000 μm in size.
3. The composite material of claim 1 , wherein the base material is selected from the group consisting of epoxy, silicon and glassy bond.
4. The composite material of claim 1 , wherein the diamond shell is additionally filled with silica, alumina, boron nitride, or aluminum nitride particles.
PCT/KR2005/004305 2005-11-02 2005-12-14 Hollow diamond shells filled compostte materials WO2007052860A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0104587 2005-11-02
KR1020050104587A KR100717132B1 (en) 2005-11-02 2005-11-02 Hollow diamond shells filled composite materials

Publications (1)

Publication Number Publication Date
WO2007052860A1 true WO2007052860A1 (en) 2007-05-10

Family

ID=38005998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2005/004305 WO2007052860A1 (en) 2005-11-02 2005-12-14 Hollow diamond shells filled compostte materials

Country Status (2)

Country Link
KR (1) KR100717132B1 (en)
WO (1) WO2007052860A1 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354692A (en) * 1998-06-10 1999-12-24 Sumitomo Electric Ind Ltd Semiconductor apparatus material, its manufacture, and semiconductor device using the material
JP2002317064A (en) * 2001-04-20 2002-10-31 Sekisui Chem Co Ltd Thermoconductive material
US20030118827A1 (en) * 2000-12-01 2003-06-26 P1 Diamond, Inc. Diamond coated article bonded to a body
US20040183172A1 (en) * 2002-10-22 2004-09-23 Sumitomo Electric Industries, Ltd. Package for housing semiconductor chip, and semiconductor device
JP2004335872A (en) * 2003-05-09 2004-11-25 Fujitsu Ltd Thermally conductive material and thermally conductive junction using same and method for manufacturing the same
WO2005008762A1 (en) * 2003-07-17 2005-01-27 Rorze Corporation Low-permittivity film, and production method therefor, and electronic component using it
JP2005236266A (en) * 2004-01-20 2005-09-02 Mitsubishi Materials Corp Insulating heat transfer structure and substrate for power module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3561465B2 (en) 2000-09-27 2004-09-02 独立行政法人 科学技術振興機構 Circuit board and its manufacturing method
JP3590776B2 (en) 2001-03-27 2004-11-17 独立行政法人 科学技術振興機構 Circuit board and its manufacturing method
KR20050095716A (en) * 2004-03-27 2005-09-30 최진영 Diamond-powdered heat sink grease
KR20060022039A (en) * 2004-09-06 2006-03-09 엘지전자 주식회사 Adhesive for precise fixing

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354692A (en) * 1998-06-10 1999-12-24 Sumitomo Electric Ind Ltd Semiconductor apparatus material, its manufacture, and semiconductor device using the material
US20030118827A1 (en) * 2000-12-01 2003-06-26 P1 Diamond, Inc. Diamond coated article bonded to a body
JP2002317064A (en) * 2001-04-20 2002-10-31 Sekisui Chem Co Ltd Thermoconductive material
US20040183172A1 (en) * 2002-10-22 2004-09-23 Sumitomo Electric Industries, Ltd. Package for housing semiconductor chip, and semiconductor device
JP2004335872A (en) * 2003-05-09 2004-11-25 Fujitsu Ltd Thermally conductive material and thermally conductive junction using same and method for manufacturing the same
WO2005008762A1 (en) * 2003-07-17 2005-01-27 Rorze Corporation Low-permittivity film, and production method therefor, and electronic component using it
JP2005236266A (en) * 2004-01-20 2005-09-02 Mitsubishi Materials Corp Insulating heat transfer structure and substrate for power module

Also Published As

Publication number Publication date
KR100717132B1 (en) 2007-05-11

Similar Documents

Publication Publication Date Title
US20150036261A1 (en) Cooling plate, method for manufacturing the same, and member for semiconductor manufacturing apparatus
WO2007019558A2 (en) Nanostructured micro heat pipes
JPWO2014196496A1 (en) Resin-impregnated boron nitride sintered body and use thereof
US7470982B2 (en) Substrate for semiconductor device and semiconductor device
TW201335350A (en) Heat conduction paste
CN110204903A (en) A kind of high thermal conductivity coefficient heat-conducting silicone grease and preparation method thereof
CN103497457A (en) Filled polymer composition for etch chamber component
EP3559720A1 (en) Synthetic diamond plates
Li et al. Compliance-tunable thermal interface materials based on vertically oriented carbon fiber arrays for high-performance thermal management
JP7217391B1 (en) Composite and its manufacturing method, and laminate and its manufacturing method
CN104550975B (en) Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding
TW464697B (en) Corrosion-resistant member, method of manufacturing the same and apparatus for heating corrosive substance
CN105347799B (en) A kind of preparation method of big particle diameter Diamond/SiC composites
Kim High thermal conductivity ceramics and their composites for thermal management of integrated electronic packaging
KR101355542B1 (en) Ceramic composite and preparing method of the same
WO2007052860A1 (en) Hollow diamond shells filled compostte materials
CN110117484B (en) Preparation method of heat-conducting silicone gel composite sheet with directionality
KR20110133120A (en) The porous ceramics materials with double-layered pore structure for vacuum chuck and method for manufacturing the same
JP7020221B2 (en) Electrostatic chuck device
CN205752140U (en) A kind of aluminising silicon carbide substrate
CN106280050B (en) A kind of high thermal conductive silicon rubber laminar composite
US20090143522A1 (en) Thermally Conductive Silicone Composition
CN114250064A (en) Flexible high-thermal-conductivity polymer-based composite material and preparation method thereof
CN110944493B (en) Metal-based composite material device based on gas-liquid phase change and preparation method thereof
KR101419740B1 (en) Bi-layer ceramic substrate for heat dissipation and method for manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 05822206

Country of ref document: EP

Kind code of ref document: A1