WO2007042681A3 - Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux - Google Patents

Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux Download PDF

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Publication number
WO2007042681A3
WO2007042681A3 PCT/FR2006/002305 FR2006002305W WO2007042681A3 WO 2007042681 A3 WO2007042681 A3 WO 2007042681A3 FR 2006002305 W FR2006002305 W FR 2006002305W WO 2007042681 A3 WO2007042681 A3 WO 2007042681A3
Authority
WO
WIPO (PCT)
Prior art keywords
aqueous suspension
cerium
dioxide particles
materials
silica dioxide
Prior art date
Application number
PCT/FR2006/002305
Other languages
English (en)
Other versions
WO2007042681A2 (fr
Inventor
Georges Michel
Mohamed Ennahali
Original Assignee
Kemesys Sa
Georges Michel
Mohamed Ennahali
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kemesys Sa, Georges Michel, Mohamed Ennahali filed Critical Kemesys Sa
Priority to EP06820206A priority Critical patent/EP1954776A2/fr
Publication of WO2007042681A2 publication Critical patent/WO2007042681A2/fr
Publication of WO2007042681A3 publication Critical patent/WO2007042681A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne une suspension aqueuse abrasive pour polir la surface d'un matériau, comprenant de 0,5 à 4% en poids de particules de dioxyde de cérium présentant une taille moyenne comprise entre 5 et 80 nm et des particules de silice de surface spécifique comprise entre 60 et 400 m2/g. Elle concerne également un procédé pour polir la surface d'un matériau utilisant ladite suspension aqueuse abrasive.
PCT/FR2006/002305 2005-10-12 2006-10-12 Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux WO2007042681A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06820206A EP1954776A2 (fr) 2005-10-12 2006-10-12 Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0510412A FR2891759B1 (fr) 2005-10-12 2005-10-12 Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux
FR0510412 2005-10-12

Publications (2)

Publication Number Publication Date
WO2007042681A2 WO2007042681A2 (fr) 2007-04-19
WO2007042681A3 true WO2007042681A3 (fr) 2007-05-31

Family

ID=36603720

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2006/002305 WO2007042681A2 (fr) 2005-10-12 2006-10-12 Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux

Country Status (3)

Country Link
EP (1) EP1954776A2 (fr)
FR (1) FR2891759B1 (fr)
WO (1) WO2007042681A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6694653B2 (ja) * 2017-04-10 2020-05-20 信越化学工業株式会社 合成石英ガラス基板用研磨剤及びその製造方法並びに合成石英ガラス基板の研磨方法
CN114045153B (zh) * 2021-12-21 2022-09-20 清华大学 一种制备二氧化铈悬浮液的方法、二氧化铈悬浮液及抛光液

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0708160A2 (fr) * 1994-10-06 1996-04-24 Cabot Corporation Suspension pour le polissage mécano-chimique de couches métalliques
US20030182868A1 (en) * 2001-05-25 2003-10-02 Haruki Nojo Cerium oxide slurry, and method of manufacturing substrate
US20030203706A1 (en) * 2002-04-25 2003-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing localized Cu corrosion during CMP
US20040040217A1 (en) * 2002-08-28 2004-03-04 Shigeaki Takashina Polishing composition
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0708160A2 (fr) * 1994-10-06 1996-04-24 Cabot Corporation Suspension pour le polissage mécano-chimique de couches métalliques
US20030182868A1 (en) * 2001-05-25 2003-10-02 Haruki Nojo Cerium oxide slurry, and method of manufacturing substrate
US20030203706A1 (en) * 2002-04-25 2003-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing localized Cu corrosion during CMP
US20040040217A1 (en) * 2002-08-28 2004-03-04 Shigeaki Takashina Polishing composition
US20040127045A1 (en) * 2002-09-12 2004-07-01 Gorantla Venkata R. K. Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition

Also Published As

Publication number Publication date
WO2007042681A2 (fr) 2007-04-19
FR2891759A1 (fr) 2007-04-13
FR2891759B1 (fr) 2009-04-10
EP1954776A2 (fr) 2008-08-13

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