FR2891759B1 - Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux - Google Patents
Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiauxInfo
- Publication number
- FR2891759B1 FR2891759B1 FR0510412A FR0510412A FR2891759B1 FR 2891759 B1 FR2891759 B1 FR 2891759B1 FR 0510412 A FR0510412 A FR 0510412A FR 0510412 A FR0510412 A FR 0510412A FR 2891759 B1 FR2891759 B1 FR 2891759B1
- Authority
- FR
- France
- Prior art keywords
- silica
- particles
- materials
- cerium dioxide
- polishing surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 title 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 239000000725 suspension Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0510412A FR2891759B1 (fr) | 2005-10-12 | 2005-10-12 | Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux |
PCT/FR2006/002305 WO2007042681A2 (fr) | 2005-10-12 | 2006-10-12 | Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux |
EP06820206A EP1954776A2 (fr) | 2005-10-12 | 2006-10-12 | Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0510412A FR2891759B1 (fr) | 2005-10-12 | 2005-10-12 | Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2891759A1 FR2891759A1 (fr) | 2007-04-13 |
FR2891759B1 true FR2891759B1 (fr) | 2009-04-10 |
Family
ID=36603720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0510412A Expired - Fee Related FR2891759B1 (fr) | 2005-10-12 | 2005-10-12 | Suspension aqueuse abrasive a base de particules de dioxyde de cerium et de silice pour le polissage de surfaces de materiaux |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1954776A2 (fr) |
FR (1) | FR2891759B1 (fr) |
WO (1) | WO2007042681A2 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6694653B2 (ja) * | 2017-04-10 | 2020-05-20 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法並びに合成石英ガラス基板の研磨方法 |
CN114045153B (zh) * | 2021-12-21 | 2022-09-20 | 清华大学 | 一种制备二氧化铈悬浮液的方法、二氧化铈悬浮液及抛光液 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
JP5017574B2 (ja) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | 酸化セリウム研磨剤及び基板の製造方法 |
US6726535B2 (en) * | 2002-04-25 | 2004-04-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing localized Cu corrosion during CMP |
TWI307712B (en) * | 2002-08-28 | 2009-03-21 | Kao Corp | Polishing composition |
US20040127045A1 (en) * | 2002-09-12 | 2004-07-01 | Gorantla Venkata R. K. | Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition |
-
2005
- 2005-10-12 FR FR0510412A patent/FR2891759B1/fr not_active Expired - Fee Related
-
2006
- 2006-10-12 EP EP06820206A patent/EP1954776A2/fr not_active Withdrawn
- 2006-10-12 WO PCT/FR2006/002305 patent/WO2007042681A2/fr not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2007042681A2 (fr) | 2007-04-19 |
EP1954776A2 (fr) | 2008-08-13 |
WO2007042681A3 (fr) | 2007-05-31 |
FR2891759A1 (fr) | 2007-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20160630 |