WO2007028898B1 - Mechanochemical polishing composition, method for preparing and using same - Google Patents

Mechanochemical polishing composition, method for preparing and using same

Info

Publication number
WO2007028898B1
WO2007028898B1 PCT/FR2006/002058 FR2006002058W WO2007028898B1 WO 2007028898 B1 WO2007028898 B1 WO 2007028898B1 FR 2006002058 W FR2006002058 W FR 2006002058W WO 2007028898 B1 WO2007028898 B1 WO 2007028898B1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
agent
layer
composition
tantalum
Prior art date
Application number
PCT/FR2006/002058
Other languages
French (fr)
Other versions
WO2007028898A1 (en
Inventor
Georges Michel
Eric Dien
Bernard Larorie
Original Assignee
Kemesys
Georges Michel
Eric Dien
Bernard Larorie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kemesys, Georges Michel, Eric Dien, Bernard Larorie filed Critical Kemesys
Publication of WO2007028898A1 publication Critical patent/WO2007028898A1/en
Publication of WO2007028898B1 publication Critical patent/WO2007028898B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

The invention concerns a mechanochemical polishing composition comprising abrasive particles including molecules of a metal oxide, a metal oxidizing agent, a first chemical attack agent of metals, a pH regulating agent, optionally a second chemical attack agent of metallic compounds, in particular of tantalum and tantalum nitride, a corrosion inhibitor, and a solvent. The invention is characterized in that the metal oxide is prepared via a sol-gel process. The invention also concerns a method for preparing and using the inventive composition.

Claims

23 23
REVENDICATIONS MODIFIÉES reçues par le Bureau international le 16 avril 2007 (16.04.2007) + DECLARATIONAMENDED CLAIMS received by the International Bureau on 16 April 2007 (16.04.2007) + DECLARATION
1/ Composition de polissage mécano chimique comprenant : des particules abrasives incluant des molécules d' un oxyde métallique, un agent oxydant les métaux, un premier agent d'attaque chimique des métaux, - un agent de régulation du pH, un deuxième agent d'attaque chimique des composés métalliques, en particulier du tantale et du nitrure de tantale,1 / Chemical mechanical polishing composition comprising: abrasive particles including molecules of a metal oxide, a metal oxidizing agent, a first metal etching agent, a pH regulating agent, a second chemical etching of metal compounds, in particular tantalum and tantalum nitride,
- un inhibiteur de corrosion, et - un solvant, ladite composition étant caractérisée en ce que l'oxyde métallique est préparé par un procédé sol-gel.a corrosion inhibitor, and a solvent, said composition being characterized in that the metal oxide is prepared by a sol-gel process.
2/ Composition selon la revendication 1, dans laquelle l'oxyde métallique est le dioxyde de silicium.2 / The composition of claim 1, wherein the metal oxide is silicon dioxide.
3/ Composition selon la revendication 1 ou 2, comprenant le solvant et, en pourcentage de la masse totale de ladite composition : - entre 1,25% et 5% de particules abrasives,3 / Composition according to claim 1 or 2, comprising the solvent and, as a percentage of the total mass of said composition: - between 1.25% and 5% of abrasive particles,
- entre 0,06% et 2,5% d'agent oxydant les métaux, entre 0,125% et 0,5% de premier agent d'attaque chimique des métaux, entre 0,01% et 0,5% d'agent de régulation du pH, - entre 0,03% et 0,15% de deuxième agent d'attaque chimique des composés métalliques, et entre 0,015% et 0,15% d'inhibiteur de corrosion.between 0.06% and 2.5% of metal oxidizing agent, between 0.125% and 0.5% of the first chemical metal-etching agent, between 0.01% and 0.5% of pH regulation, between 0.03% and 0.15% second chemical etching agent of the metal compounds, and between 0.015% and 0.15% corrosion inhibitor.
4/ Composition selon l'une quelconque des revendications 1 à 3, comprenant de l'eau déionisée en tant que solvant et, en pourcentage de la masse totale de ladite composition : entre 1,25% et 5% de dioxyde de silicium en tant que particules abrasives, entre 0,06% et 2,5% d'eau oxygénée en tant qu'agent oxydant les métaux, - entre 0,125% et 0,5% d'acide lactique en tant que premier agent d'attaque chimique des métaux, entre 0,01% et 0,5% de potasse ou d'ammoniaque en tant qu'agent de régulation du pH, entre 0,03% et 0,15% de fluorure d'ammonium ou de potassium en tant que deuxième agent d'attaque chimique des composés métalliques, et entre 0,015% et 0,15% de benzotriazole en tant qu'inhibiteur de corrosion.4 / Composition according to any one of claims 1 to 3, comprising deionized water as a solvent and, as a percentage of the total mass of said composition: between 1.25% and 5% of silicon dioxide as abrasive particles, between 0.06% and 2.5% of hydrogen peroxide as a metal oxidizing agent, - between 0.125% and 0.5% lactic acid as the first chemical etching agent for metals, between 0.01% and 0.5% of potassium hydroxide or ammonia as a pH regulating agent, between 0.03% and 0, 15% ammonium or potassium fluoride as the second chemical etching agent for the metal compounds, and between 0.015% and 0.15% benzotriazole as a corrosion inhibitor.
5/ Composition selon l'une quelconque des revendications 1 à 4, dans laquelle l'agent de régulation du pH est présent en une quantité permettant d'ajuster le pH de ladite composition entre 0 et 12, de préférence entre 4 et 8.5 / A composition according to any one of claims 1 to 4, wherein the pH regulating agent is present in an amount to adjust the pH of said composition between 0 and 12, preferably between 4 and 8.
6/ Composition selon l'une quelconque des revendications 1 à 5, dans laquelle les particules abrasives forment des agrégats dont la taille moyenne est comprise entre 10 et 150 nra, de préférence entre 30 et 120 nm.6 / Composition according to any one of claims 1 to 5, wherein the abrasive particles form aggregates whose average size is between 10 and 150 nra, preferably between 30 and 120 nm.
7/ Procédé de préparation de la composition selon l'une quelconque des revendications 1 à 6, caractérisé en ce qu' il comprend les étapes suivantes : - la solubilisation de l'agent oxydant les métaux, du premier agent d'attaque chimique des métaux, du deuxième agent d' attaque chimique des composés métalliques et de l'inhibiteur de corrosion dans le solvant ; - l'ajout de la solution obtenue à l'étape précédente dans une suspension d' oxyde métallique par exemple concentrée à 20% en poids, pendant une durée de deux heures, sous forte agitation ; et 257 / A method for preparing the composition according to any one of claims 1 to 6, characterized in that it comprises the following steps: - the solubilization of the metal oxidizing agent, the first chemical etching agent of metals , the second agent for etching metal compounds and the corrosion inhibitor in the solvent; - The addition of the solution obtained in the preceding step in a suspension of metal oxide, for example concentrated to 20% by weight, for a period of two hours, with vigorous stirring; and 25
l'ajustement du pH du mélange obtenu à l'étape précédente, dans une plage allant de 0 à 12 et de préférence de 4 à 8, par l'ajout de l'agent de régulation du pH.adjusting the pH of the mixture obtained in the previous step, in a range from 0 to 12 and preferably from 4 to 8, by adding the pH control agent.
8/ Utilisation de la composition selon l'une quelconque des revendications 1 à 6 pour le polissage mécano chimique de couches appliquées sur un substrat S portant au moins un microcomposant semi-conducteur.8 / Use of the composition according to any one of claims 1 to 6 for the chemical mechanical polishing of layers applied to a substrate S carrying at least one semiconductor microcomponent.
9/ Utilisation selon la revendication 8, dans laquelle au moins une des couches appliquées sur le substrat S est une couche 4 métallique comprenant par exemple du cuivre .9 / The use of claim 8, wherein at least one of the layers applied to the substrate S is a metal layer 4 comprising for example copper.
10/ Utilisation selon la revendication 8 ou 9, dans laquelle au moins une des couches appliquées sur le substrat S est une couche 1 de matériau' isolant, comprenant par exemple du dioxyde de silicium.10 / The use of claim 8 or 9, wherein at least one of the layers applied to the substrate S is a layer 1 of insulating material, comprising for example silicon dioxide.
11/ Utilisation selon l'une quelconque des revendications 8 à 10, dans laquelle au moins une des couches appliquées sur le substrat S est une couche 2, 3,11 / Use according to any one of claims 8 to 10, wherein at least one of the layers applied to the substrate S is a layer 2, 3,
6, 7 d'adhérence comprenant par exemple du tantale et/ou du nitrure de tantale.6, 7 comprising, for example, tantalum and / or tantalum nitride.
12/ Utilisation selon l'une quelconque des revendications 8 à 11, dans laquelle au moins une des couches appliquées sur le substrat S est une couche 5 d'isolation comprenant par exemple un alliage fer-nickel.12 / Use according to any one of claims 8 to 11, wherein at least one of the layers applied to the substrate S is an insulation layer 5 comprising for example an iron-nickel alloy.
13/ Utilisation selon l'une quelconque des revendications 8 à 12, dans laquelle ledit substrat S est recouvert dans l'ordre : - d'une couche 1 de matériau isolant, comprenant du dioxyde de silicium,13 / Use according to any one of claims 8 to 12, wherein said substrate S is covered in the order of: - a layer 1 of insulating material, comprising silicon dioxide,
- d'un niveau II barrière multicouche comprenant, à partir de la couche 1 de matériau isolant, une première 26a level II multilayer barrier comprising, from the layer 1 of insulating material, a first 26
couche 2 d'adhérence comprenant du tantale, une deuxième couche 3 d'adhérence comprenant du nitrure de tantale, une couche 5 d'isolation comprenant un alliage fer- nickel, une troisième couche 6 d'adhérence comprenant du nitrure de tantale et une quatrième couche 7 d' adhérence comprenant du tantale, etadhesion layer 2 comprising tantalum, a second adhesion layer 3 comprising tantalum nitride, an insulation layer 5 comprising an iron-nickel alloy, a third adhesion layer 6 comprising tantalum nitride and a fourth adhesion layer 7 comprising tantalum, and
- d'une couche 4 métallique comprenant du cuivre. a metal layer 4 comprising copper.
PCT/FR2006/002058 2005-09-09 2006-09-06 Mechanochemical polishing composition, method for preparing and using same WO2007028898A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0509241 2005-09-09
FR0509241A FR2890658B1 (en) 2005-09-09 2005-09-09 CHEMICAL MECANO POLISHING COMPOSITION, PROCESS FOR PREPARATION AND USE

Publications (2)

Publication Number Publication Date
WO2007028898A1 WO2007028898A1 (en) 2007-03-15
WO2007028898B1 true WO2007028898B1 (en) 2007-06-07

Family

ID=36581804

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2006/002058 WO2007028898A1 (en) 2005-09-09 2006-09-06 Mechanochemical polishing composition, method for preparing and using same

Country Status (2)

Country Link
FR (1) FR2890658B1 (en)
WO (1) WO2007028898A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2947481B1 (en) 2009-07-03 2011-08-26 Commissariat Energie Atomique SIMPLIFIED COPPER-COPPER BONDING PROCESS
CN111537318A (en) * 2020-03-31 2020-08-14 先导薄膜材料（广东）有限公司 Metallographic phase display method of copper-gallium alloy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device

Also Published As

Publication number Publication date
WO2007028898A1 (en) 2007-03-15
FR2890658B1 (en) 2012-04-13
FR2890658A1 (en) 2007-03-16

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