WO2007011068A1 - Source de lumiere a diodes emettrices de lumiere - Google Patents

Source de lumiere a diodes emettrices de lumiere Download PDF

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Publication number
WO2007011068A1
WO2007011068A1 PCT/JP2006/314938 JP2006314938W WO2007011068A1 WO 2007011068 A1 WO2007011068 A1 WO 2007011068A1 JP 2006314938 W JP2006314938 W JP 2006314938W WO 2007011068 A1 WO2007011068 A1 WO 2007011068A1
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WIPO (PCT)
Prior art keywords
light
emitting diode
light source
molding resin
diode elements
Prior art date
Application number
PCT/JP2006/314938
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English (en)
Inventor
Shuji Gomi
Kenji Shinozaki
Original Assignee
Showa Denko K.K.
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Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Publication of WO2007011068A1 publication Critical patent/WO2007011068A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0025—Combination of two or more reflectors for a single light source
    • F21V7/0033—Combination of two or more reflectors for a single light source with successive reflections from one reflector to the next or following
    • F21V7/0041—Combination of two or more reflectors for a single light source with successive reflections from one reflector to the next or following for avoiding direct view of the light source or to prevent dazzling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

Definitions

  • the present invention relates to a light source using a light emitting diode (LED) , which is useful as a lighting equipment and a backlight for a liquid crystal display.
  • LED light emitting diode
  • a light emitting diode element has been improved remarkably in terms of light emitting efficiency and advance to the practical stage for use in illumination and lighting.
  • using a light emitting diode as a backlight for a liquid crystal display can realize good color reproducibility and fast response, which enables to expect the achievement of better image quality.
  • a light emitting diode is environmentalIy-friendly, and has grown in use for interior light of automobiles and for a light source of headlights.
  • a light emitting diode As a light source for a lighting equipment or a backlight for a liquid crystal display, it is necessary to mount numerous light-emitting diode elements on the same plane substrate in order to produce a planate light source.
  • a planate light source has been produced by arranging bullet-type or top-view type LED lamps in a matrix on a plane.
  • this method is disadvantageous from a cost viewpoint since a light emitting diode element is individually mounted in a separate package.
  • Patent Document 1 JP-A-2000-329940
  • Patent Document 2 JP-A-2000-329940
  • a light-emitting diode element (1) is directly placed in an opening (4) of a circuit board (2) on the heatsink plate (3) .
  • Plural light-emitting diode elements (1) are individually covered with molding resin (5) , and reflector plate pieces (6) the surface of which is plated with nickel are provided at positions on the plate surrounding the molding resin. In such a method, heat dissipation is improved since heat generated by the light-emitting diode elements (1) is directly transmitted to the heatsink plate (3) .
  • the light distribution of the emitted light has not been improved, which is no different from that of the planar light source wherein the above-mentioned bullet-type or top-view type LED lamps are arranged in a matrix in a plane.
  • a so-called high efficacy power LED having a power consumption of IW or more is used for the light source of direct backlight units for an LCD television, which requires large luminance. Due to high heat generation of a high efficacy power LED, it is necessary to keep at least 5mm interval between the chips, preferably 10mm or more. However, there has been a problem that unevenness in brightness increases when the distance between the chips is 5mm or more.
  • LEDs of three primary colors that is, red, green and blue are generally used for a backlight unit for a liquid crystal display, and arrangement of high efficacy power LEDs with an interval of 5mm or more has a problem as a white light source due to insufficient mixing of the three primary colors as well as unevenness in brightness (see, for example, "Assembly of High- Brightness LEDs/Exhaustive Study on Mounting Technology", Electronic Journal 97 th Technical Symposium, page 73, February 2005 (Non-patent Document I)).
  • An object of the present invention is to solve these problems and to provide an LED light source which has high front-luminance and is excellent in evenness in brightness and chromaticity, and enables thin profile of a back light unit.
  • the present inventors have found the following: providing molding resin extending over plural LED elements to cover them instead of forming the resin molding respectively per LED element enables to make the brightness distribution more even in a light source wherein LED elements are arranged in a matrix on a plane with an interval of 5mm or more between each other, and to facilitate mixing colors using light sources with different colors .
  • the present invention has been achieved based on this finding. That is, the present invention relates to, for example, the following items:
  • a light-emitting diode light source having plural light- emitting diode elements mounted on the same circuit board, wherein molding resin is provided extending over plurality of the light- emitting diode elements to cover them. 2. The light-emitting diode light source as described in above 1, wherein the light-emitting diode elements are arranged with an interval of 5mm or more.
  • the light-emitting diode light source as described in above 8 wherein the base of the square pyramid is 2 mm or less and the height of which is half or less of the base. 10. The light-emitting diode light source as described in above 6, wherein the total area of base of protrusions on the surface of the molding resin is from 10 to 100% of the molding resin surface.
  • a method for producing the light-emitting diode light source as described in above 1, comprising providing a molding frame on the circuit board so that the plural light-emitting diode elements are located in the molding frame, and providing molding resin extending over the' plural light-emitting diode elements to cover them by filling molding resin in the molding frame.
  • a liquid crystal display provided with the lighting equipment as described in 13 above.
  • the LED light source of the present invention enables to make the brightness distribution more even in a light source wherein LED elements are arranged two-dimensionally with an interval of 5mm or more between each other, and to facilitate mixing colors using light sources with different colors. Furthermore, since the LED light source of the present invention is excellent in terms of front-luminance, evenness in brightness and chromaticity, it is useful for use in a display device or a lighting equipment.
  • the LED light source of the present invention is a light source having plural light-emitting diode elements mounted on the same circuit board wherein molding resin is provided extending over plurality of light-emitting diode elements to cover them.
  • the light-emitting LED diode elements used for the present invention may be selected according to purposes.
  • LED which has a high degree of color reproducibility is desirable to be used for a light source for a backlight of a liquid crystal display.
  • One of the preferable examples is the one wherein plural blue, green and red light-emitting diode elements are arranged on the same board.
  • a white light source it is preferable to provide light-emitting diode elements of intermediate colors such as yellow and orange besides the above-mentioned blue, green and red ones on the same board or to use a white light source comprising a combination of light-emitting diode elements of blue or near- ultraviolet and fluorescent substance.
  • the distance between the light-emitting diode elements to be arranged is not specifically limited, but when high efficacy power devices having a power consumption of IW or more are used, heat generated from the devices is extremely high and arranging the devices too close to each other will damage devices and substrates. Therefore, the distance between the elements is preferably 5mm or more.
  • the board on which plural light- emitting diode elements are provided is composed of a circuit board and a heatsink plate.
  • the circuit board is a substrate on which a circuit is formed in order to apply electricity to the light- emitting diode elements, and to which the cathode and anode of the light-emitting diode element are connected.
  • the methods for obtaining the circuit board include a method of laminating an insulating resin substrate and a copper foil and etching the copper foil in a circuit pattern. Examples of the insulating resin substrates include a so-called glass epoxy substrate.
  • a light-emitting diode element is placed in an opening at which a through-hole is provided in the circuit board to expose a heatsink plate.
  • the light- emitting part of the light-emitting diode element appears to be protruded from the surface of the circuit board. Therefore, though it may vary depending on the size of the light-emitting diode element, the thickness of the circuit board is preferably 0.1mm or less, particularly preferably 50um or less.
  • the heatsink plate is laminated on a side of the circuit board where the circuit is not formed and intended for dissipating the heat generated from the light-emitting diode elements.
  • Preferable materials for the heatsink plate include metal and highly heat-conductive ceramics.
  • the metal is preferably aluminum, copper, stainless or the like.
  • the highly heat-conductive ceramics is preferably aluminum nitride.
  • the light-emitting diode element As a method for placing plural light-emitting diode elements on a circuit board, it is preferable from the viewpoint of heatsinking performance to place the light-emitting diode element directly on the heatsink plate in the form of a so-called bare chip instead of mounting a light-emitting diode element in a package.
  • through-holes are provided in the circuit board where the light-emitting diode elements are to be placed so that the heatsink plate becomes exposed at the through-hole when the heatsink plate is bonded on the circuit board, and the light-emitting diode elements are placed on the heatsink plate in the opening.
  • means having lower thermal resistance is preferable and includes, for example, silver paste and thermal conductive silicone grease.
  • Molding resin is preferably a thermosetting transparent resin, particularly preferably a transparent epoxy resin.
  • transparent epoxy resin include epoxy resin such as bisphenol-A diglycidyl ether, 2, 2-bis (4-glycidyloxycyclohexyl) propane, 3,4- epoxycyclohexylmethyl-3, 4-epoxyhexane carboxylate, vinylcyclohexene dioxide, 2- (3, 4-epoxycyclohexane) -5, 5-spiro (3,4- epoxycyclohexane) - 1,3-dioxane, bis (3,4-epoxycyclohexyl) adipate, 1 / 2- cyclopropanedicarboxylic acid bisglycidyl ester, triglycidyl isocyanurate, monoallyldiglycidylisocyanurate and diallylmonoglycidyl isocyanurate cured by acid anhydride such as hexahydrophthalic anhydride, methyl
  • the methods for providing molding resin extending over plural bare chips in order to cover them include a method of applying the resin by a dispenser or printing; or providing a molding frame around the circuit board, filling the molding frame with resin, smoothing the resin using a doctor blade or the like and then curing it.
  • the other methods include a method of shaping and bonding the resin onto the substrate using a mold.
  • the above-mentioned molding resin is provided extending over plural light-emitting diode elements on the substrate to cover them.
  • ⁇ to provide molding resin extending over plural light-emitting diode elements to cover them means to form plural light-emitting diode elements integrally by covering plural light-emitting diode elements in a state that the molding resin which covers each of light-emitting diode elements is integrally formed in a consecutive fashion.
  • the color may be varied by adding fluorescent substance to the molding resin for wavelength conversion.
  • the examples of the fluorescent substances include an inorganic fluorescent substance such as so-called yttrium aluminum garnet (YAG) cerium fluorescent substance and an organic fluorescent substance such as rhodamine and coumarin.
  • the molding resin layer of the present invention has a higher refractive index than that of air, it also has a function of a light guide at the same time. That is, since a certain proportion of the light radiated from the plural LED elements is transmitted by total reflection through the inside of the molding resin layer, the brightness becomes more even and mixing colors is facilitated using light sources with different colors. Accordingly, in the case where a diffuser plate for making the brightness even is provided, it enables to reduce the distance between the LED elements and diffuser plates to about 10mm thereby to obtain a thin-profile backlight unit.
  • the LED light source of the present invention it is preferable to provide a reflector immediately above the light- emitting diode elements .
  • the reflectors include a direct reflector or a diffuse reflector having a reflectance of 95% or more, preferably 97% or more.
  • the shape of a reflector may be determined according to the shape of a light-emitting diode element but it is preferably in a disc shape having a diameter of from 1 to 10 times, more preferably 2 to 5 times of one side of the light-emitting diode elements.
  • Examples of the materials for the reflectors include a metal foil such as an aluminum foil, a thin film of metal such as aluminum, gold, silver and platinum and white ink.
  • a metal foil such as an aluminum foil can be bonded using a transparent adhesive agent.
  • a thin film of metal such as aluminum, gold, silver and platinum can be formed according to a metal mask pattern by a method such as vapor deposition, sputtering and electroless plating.
  • white ink (such as acrylic resin containing titanium dioxide) can be applied by a dispenser or by a printing method. Among these, applying white ink is preferable because it is simple and easy.
  • protrusions on the surface of the molding resin examples include a semisphere, cuboid, circular cone and polyangular pyramid. Preferred is a polyangular pyramid, specifically a square pyramid.
  • the square pyramid preferably has a base side of 2mm or less and a height which is half or less of the base side.
  • Convex portions such as a square pyramid are preferably formed adjacently to each other.
  • the area of base of the convex portions is preferably at least 10% or more, more preferable 50% or more of the surface area on which the convex portions are formed.
  • a method of forming protrusions may be a method of constructing the protrusions on the molding resin itself or a method of laminating a resin film on which protrusions are formed onto the molding resin.
  • the LED light source of the present invention can be suitably used as a light source for a lighting equipment or a backlight of a liquid crystal display.
  • a blue LED the wavelength of which is in a range of 420 to 480nm and to add to the molding resin an appropriate amount of fluorescent substance which absorbs part of the blue light and emits fluorescence having a longer wavelength, and thereby to make the light source a white light source having high color rendering properties.
  • diodes emitting at least three-color lights of red, green and blue.
  • FIG. 1 A schematic plan view showing an example of the present invention
  • FIG. 2 A cross-sectional view along the line A-A of Fig. 1
  • FIG. 3 A schematic plan view of a backlight using the light source of the present invention
  • FIG. 4 A plan view showing the locations of measurement
  • FIG. 5 A schematic cross-sectional view of an LED light source showing another embodiment of the present invention
  • FIG. 6 A schematic cross-sectional view of a conventional LED light source
  • Example 1
  • an aluminum substrate having a size of 80 x 120mm and thickness of 1.2mm was used as a heatsink plate (3) and a film comprising a copper foil having a thickness of 18 ⁇ m on one side of which an insulating adhesive resin film having a thickness of 20um was bonded onto the heatsink plate to produce a circuit board (2) having a thickness of about 30um.
  • a circuit pattern was formed by etching the copper part. Also, six through openings of 5mm square (3 openings x 2 rows) were perforated at the positions where LED chips (I) ' were to be placed.
  • the light-emitting diode element (1) having a size of lmm square were placed in two rows in the order of red (TOA- 1000, produced by SHOWA DENKO K. K.), green (produced by ITSWELL Co., Ltd.) and blue one (produced by ITSWELL Co., Ltd.) from the left to the right.
  • a molding frame comprising a polypropylene sheet having a thickness of 2mm (70mm x 90mm in the opening) having the same outline of the LED board was placed on the LED board, and a transparent epoxy resin (5) (NLD-L-645, produced by Sanyu Rec Co., Ltd.) was placed dropwise into the molding frame by a dispenser and then cured at 130°C to thereby form molding resin (5) . Then, a metal mask was placed on the LED board which has openings having a
  • the obtained four LED light sources was bonded to the bottom surface of a box-type container for a backlight having an outside dimension of 270 x 200mm and a depth of 30mm using a high thermal conductive silicone grease (oil compound G-751, produced by Shin- Etsu Chemical Co., Ltd.) as shown in the schematic plan view (Fig. 3) .
  • a high thermal conductive silicone grease oil compound G-751, produced by Shin- Etsu Chemical Co., Ltd.
  • a reflection film Limirror, produced by Toray Industries, Inc.
  • a polycarbonate diffuser Panlite, produced by Teijin Chemicals Ltd.
  • a polycarbonate diffuser Panlite, produced by Teijin Chemicals Ltd.
  • 30OmA current was applied to all the blue light-emitting diode elements and and 35OmA to all the green and red light-emitting diode elements to turn them on, and the brightness and chromatic!ty coordinates at nine points shown in Fig. 4 were measured using spectroradiometer CS-IOOOS (spectroscopy type) produced by Konica Minolta Holdings, Inc.
  • the average brightness was about 6000cd/m 2 and the brightness dispersion ( ⁇ (maximum brightness - minimum brightness)/ average brightness ⁇ x 100%) was 13%.
  • a backlight unit was produced in the same manner as in Example 1 except that a gloss ink (MIR-9100, produced by Teikoku Printing Inks Manufacturing Co., Ltd.) was applied in a thickness of 30um as a reflector (7) .
  • the reflectance of the reflector (7) measured in the same way as in Example 1 was 97%.
  • the average brightness was about 11000cd/m 2 and the brightness dispersion was 13%.
  • Example 2 An acrylic resin board (dimension: 70mm x 90mm, thickness: lmm) on the whole surface of which convex portions each in a shape of a square pyramid having a base side of ,2ram and height of lmm were formed was bonded on the molding resin of each of the four LED light sources produced in Example 1.
  • the average brightness was about 15600cd/m 2 and the brightness dispersion was 15%.
  • resin molding portions (5) are formed so that they may protrude on the surface of the LED board.
  • the resin molding portions (5) may be formed at the same level of the thickness of reflector plate pieces (6) provided on the outer ends of the surface of the LED board, that is, the surfaces of the reflector plate pieces (6) and resin molding (5) may be formed almost on the same level.
  • reflectors (7) may be provided appropriately at positions immediately above light-emitting diode elements (LED chips) similarly to Examples 1 and 2.
  • recesses may be formed in the heatsink plate (3) in which recesses LED chips are mounted and resin molding portion (5) is formed to cover the LED chips so as to make the surfaces of the resin molding portion (5) and the heatsink plate (3) almost at the same level.
  • the interval between adjacent light-emitting diode elements is preferably 5mm or more.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne une source de lumière à diodes émettrices de lumière comportant plusieurs éléments de diodes émettrices de lumière montées sur la même carte de circuit imprimé, une résine de moulage s’étendant sur la pluralité d'éléments de diodes émettrices de lumière pour les recouvrir ; un procédé de production de cette source de lumière ; un dispositif d’affichage, un équipement d’éclairage et un rétroéclairage pour affichage à cristaux liquides utilisant la source de lumière. Puisque la source de lumière à DEL selon la présente invention présente une luminance avant, une luminosité et une chromaticité excellentes, elle peut facilement être utilisée dans un dispositif d'affichage, un équipement d'éclairage ou un rétroéclairage pour affichage à cristaux liquides.
PCT/JP2006/314938 2005-07-22 2006-07-21 Source de lumiere a diodes emettrices de lumiere WO2007011068A1 (fr)

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US70350805P 2005-07-29 2005-07-29
US60/703,508 2005-07-29

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EP3540504A4 (fr) * 2016-11-14 2020-07-15 Seoul Semiconductor Co., Ltd. Dispositif d'affichage et unité de rétroéclairage associée
CN111863785A (zh) * 2019-04-26 2020-10-30 夏普株式会社 Led光源基板和照明装置
US11043620B2 (en) 2016-12-26 2021-06-22 Nichia Corporation Light emitting device
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
EP4063716A4 (fr) * 2019-12-31 2023-07-05 Suzhou Opple Lighting Co., Ltd. Ensemble électroluminescent et luminaire

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WO2008043352A3 (fr) * 2006-10-13 2008-12-04 Osram Gmbh Module optoélectronique et procédé de production d'un module optoélectronique
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WO2017161330A1 (fr) * 2015-03-20 2017-09-21 Rohinni, LLC Procédé et appareil de diffusion de lumière
US11562990B2 (en) 2015-03-20 2023-01-24 Rohinni, Inc. Systems for direct transfer of semiconductor device die
US10157896B2 (en) 2015-03-20 2018-12-18 Rohinni, LLC Method and apparatus for light diffusion
US10170454B2 (en) 2015-03-20 2019-01-01 Rohinni, LLC Method and apparatus for direct transfer of semiconductor device die from a mapped wafer
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US10636770B2 (en) 2015-03-20 2020-04-28 Rohinni, LLC Apparatus and method for direct transfer of semiconductor devices from a substrate and stacking semiconductor devices on each other
US10490532B2 (en) 2015-03-20 2019-11-26 Rohinni, LLC Apparatus and method for direct transfer of semiconductor devices
US11152339B2 (en) 2015-03-20 2021-10-19 Rohinni, LLC Method for improved transfer of semiconductor die
US10566319B2 (en) 2015-03-20 2020-02-18 Rohinni, LLC Apparatus for direct transfer of semiconductor device die
US10615152B2 (en) 2015-03-20 2020-04-07 Rohinni, LLC Semiconductor device on glass substrate
US10910354B2 (en) 2015-03-20 2021-02-02 Rohinni, LLC Apparatus for direct transfer of semiconductor device die
US9985003B2 (en) 2015-03-20 2018-05-29 Rohinni, LLC Substrate with array of LEDs for backlighting a display device
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US11069551B2 (en) 2016-11-03 2021-07-20 Rohinni, LLC Method of dampening a force applied to an electrically-actuatable element
US11675229B2 (en) 2016-11-14 2023-06-13 Seoul Semiconductor Co., Ltd. Display apparatus and backlight unit thereof
EP3540504A4 (fr) * 2016-11-14 2020-07-15 Seoul Semiconductor Co., Ltd. Dispositif d'affichage et unité de rétroéclairage associée
US11143913B2 (en) 2016-11-14 2021-10-12 Seoul Semiconductor Co., Ltd. Display apparatus and backlight unit thereof
US11300830B2 (en) 2016-11-14 2022-04-12 Seoul Semiconductor Co., Ltd. Display apparatus and backlight unit thereof
US11462433B2 (en) 2016-11-23 2022-10-04 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US11211532B2 (en) 2016-12-26 2021-12-28 Nichia Corporation Light emitting device
US11043620B2 (en) 2016-12-26 2021-06-22 Nichia Corporation Light emitting device
US10354895B2 (en) 2017-01-18 2019-07-16 Rohinni, LLC Support substrate for transfer of semiconductor devices
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US11728195B2 (en) 2018-09-28 2023-08-15 Rohinni, Inc. Apparatuses for executing a direct transfer of a semiconductor device die disposed on a first substrate to a second substrate
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
US11367814B2 (en) 2019-04-26 2022-06-21 Sharp Kabushiki Kaisha LED light-source substrate and illumination device
CN111863785A (zh) * 2019-04-26 2020-10-30 夏普株式会社 Led光源基板和照明装置
EP4063716A4 (fr) * 2019-12-31 2023-07-05 Suzhou Opple Lighting Co., Ltd. Ensemble électroluminescent et luminaire

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