WO2006136577A1 - Capteur de courant permettant la mesure de courant a separation galvanique - Google Patents

Capteur de courant permettant la mesure de courant a separation galvanique Download PDF

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Publication number
WO2006136577A1
WO2006136577A1 PCT/EP2006/063392 EP2006063392W WO2006136577A1 WO 2006136577 A1 WO2006136577 A1 WO 2006136577A1 EP 2006063392 W EP2006063392 W EP 2006063392W WO 2006136577 A1 WO2006136577 A1 WO 2006136577A1
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WIPO (PCT)
Prior art keywords
current
conductor
layer
detection
sensor elements
Prior art date
Application number
PCT/EP2006/063392
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German (de)
English (en)
Inventor
Jens Hauch
Gotthard Rieger
Kai-Uwe Barholz
Marco Diegel
Roland Mattheis
Original Assignee
Siemens Aktiengesellschaft
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Publication of WO2006136577A1 publication Critical patent/WO2006136577A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge

Definitions

  • the invention relates to a current sensor for galvanically isolated current measurement, in particular direct current measurement.
  • the galvanically isolated current detection is required in many devices for interference-free control and regulation or to monitor functional states.
  • the current range to be measured is in the range of a few mA to several 100 A for both DC and AC currents. Due to the lack of alternating fields, no inductive methods can be used to detect DC currents.
  • field sensors which have a bridge circuit of four magnetoresistive XMR sensor elements.
  • the bridge circuit via which a bridge current is lead, two parallel-connected bridge branches, each having two elements, the sensor has ⁇ . Between the sensor elements of each bridge branch is a common tap of the bridge circuit for a bridge signal.
  • the sensor elements each det as so-called spin valves keptbil ⁇ , wherein they have a hard reference layer magnetization and a magnetic field to be detected by the rotatable Detekti- onstikmagnetmaschine.
  • Reference layer magnetizations of all sensor elements point in the same direction, while the detection magnetizations of in one Brückenzweig horizontal sensor elements are each directed antiparallel.
  • Reference layer magnetization and detection layer magnetization of each sensor element enclose an angle of approximately 90 ° in the field-free case.
  • a bridge circuit of four magnetoresistive XMR sensor elements of the spin valve type for current measurement can be found in DE 101 13 131 A1.
  • the magnetizations of the reference layers of elements of each bridge branch are anti-parallel, aligned in the direction of the bridge current.
  • the generated magnetic field on current-carrying sorelementen each of two Sen ⁇ is detected, forming a half-bridge and work so as angle sensors. From a difference of the angle signals of the half-bridges, the current is then determined.
  • the invention is based on the problem to provide a current sensor for galvanically isolated current detection, which is simple in construction and allows the exact current detection with ge ⁇ demanded dynamics and linearity.
  • a current sensor of the aforementioned type comprising a U-shaped current conductor, above or below the one of the detection of the generated during current flow between the conductor legs, the current proportional magnetic gradient field de bridge circuit consisting of four XMR Sensor elements is arranged, of which two are assigned to a leg of the current conductor, wherein the bridge circuit over which a bridge current is to lead, two parallel ge ⁇ switched bridge branches, in which there are two, a common tap of the bridge circuit forming sensor elements , in which
  • the detection layer magnetizations are in the absence of current flow at an angle between 80 ° - 100 ° to the respective reference layer magnetization
  • the term "XMR” is generally used for the magnetoresistive effect of thin-layer sequences, which is markedly increased, in particular by at least one order of magnitude, compared with the "classical AMR effect” occurring in single-layer elements.
  • the main representatives are the so-called GMR (Giant Magneto Resistance) effect and the TMR (Tunneling Magneto Resistance) effect (see, for example, the publication “XMR Technologies” - Technology Analysis: Magnetism, Volume 2, of the VDI Technology Center). Physical Technologies ", Dusseldorf (DE), 1997, pages 11 to 46).
  • the current sensor according to the invention takes advantage of the intrinsic properties of a ⁇ XMR-sensor bridge in connection with crossed anisotropy between the reference layer magnetization and de tektions fürmagnetmaschine.
  • the galvanic isolation between the U-shaped conductor and the sensor bridge is given by the magnetic field measurement and the resulting possible electrical insulation layer between the conductor and bridge, said insulation layer is made possible in a preferred Si structure of the bridge circuit and the sensor by the oxide of the substrate ,
  • the one extending between the two preferably runs parallel to one another U-shaped conductor section forming current legs generated in-plane gradient magnetic field, which is detected from the two thigh ⁇ specific individual fields metrologically over the bridge determined.
  • This advantageously makes it possible external superimposed homogeneous magnetic fields at Integra ⁇ tion of the current sensor into an electrical device often gege ben ⁇ to suppress, so that the current detection therefore extremely resistant to interference is.
  • the configuration of the XMR sensor elements as spin valves he ⁇ enables highly accurate detection of the individual fields and here over the gradient field after the Detektions für- magnetization easily depending on the particular he ⁇ rotates witnessed magnetic field, and consequently as a result of thereof re- sulting change in resistance over the XMR-sensor element can be highly accurately each field and over the bridge scarf ⁇ then processing the gradient field recorded and reproduced in the form of the off ⁇ transition signal.
  • the interpretation ⁇ is supply and connection of the XMR-sensor bridge chosen so that the reference layer magnetization of all elements unidirektio- nal and at least approximately perpendicular to the two legs of the U-shaped current conductor (including deviations of + 10 ° from the exact perpendicularity lies, while the preferred direction of the detection layer at an angle between 80 ° - 100 °, preferably about 90 ° to
  • Reference layer magnetization is, that is substantially parallel to the conductor leg, wherein the detection layer magnetizations need not necessarily be unidirectional, they may also be uniaxial. In any case, the respective detection layer magnetization rotates very easily with the external field.
  • the output of the XMR sensor measuring bridge is the Feldstär ⁇ ke the uniaxial gradient field in direct proportion because the magnetoresistive signal from an XMR sensor element guide in the off ⁇ a spin valves so-called proportional layer over a range of 180 ° to the cosine of the angle between the reference ⁇ and detection layer magnetization.
  • the detection layer imprinted a preferred direction in the linear region of the cosine, ie preferably in the angular range between 80 ° - 100 °, in particular 90 ° to Referenz Anlagen ⁇ netization
  • the angle component of the rotating magnetization vector is proportional to the field strength of the applied uniaxial field.
  • the proportionality ratio can be adjusted by the strength of the anisotropies of the detection layer, which will be discussed later.
  • the current sensor of the invention allows the exact He constitutional ⁇ to a direct current.
  • it provides a linear output signal as led from ⁇
  • it is very simple in structure configured after only provide the four XMR sensor elements and ten as a measuring bridge to 29al- and are to be contacted accordingly.
  • the uniform orientation of the magnetization a simple conditioning of the reference layers, they can advertising aligned in a common manufacturing process to.
  • the detection layer magnetization which is preferably likewise unidirectional, and therefore can also be produced in a single common production step for all four XMR sensor elements. This also applies in the case of the formation of a uniaxial detection-layer magnetization, which sets as a result of reverse rotations after the imprinting of a preferred direction.
  • each reference layer is preferably exchange-coupled with an antiferromagnetic layer.
  • an antiferromagnetic layer For this, a na ⁇ t Anlagen antiferromagnet can be applied.
  • an exchange bias system is formed in which the reference ⁇ magnetization is pinned on the magnetization magnet Antiferromagneten.
  • the proportionality ratio of the output signal to the in-plane gradient magnetic field can be set.
  • each detection layer may have a coating-induced anisotropy lying in the direction of the detection layer magnetization, for which purpose as a rule the layer is deposited in an applied magnetic field which defines the preferred direction.
  • each XMR sensor element can be designed as a strip element for generating a shape anisotropy lying in the direction of the detection layer magnetization.
  • This for ⁇ manisotropy allows a reduction of the influence of the orange-peel coupling.
  • This orange-peel coupling produces a unidirectional anisotropy in pinning direction, ie, in Rich ⁇ processing of the exchange coupling of the reference layer with the anti-ferromagnet.
  • the orange-peel-coupling field is on Oberflä ⁇ chenuneben whatsoever in the transitions from the detection layer to the non-magnetic intermediate layer, and due to the reference layer.
  • a ferromagnetic coupling in the interface region sets in here, which although extremely local limited, nevertheless produces a coupling field and thus a unidirectional anisotropy perpendicular to the detection layer magnetization.
  • This may, inter alia, by the strip width Titange ⁇ be acting.
  • a shape anisotropy is produced with a shape anisotropy field strength over the strip width, which lies uniaxially in the strip longitudinal direction, that is to say perpendicular to the orange-peel coupling field, thereby reducing it.
  • the special design of the particular detection layer or the Anisotropie researcher can thus Sen ⁇ sorsignal be set so that hysteresis and non unambiguities the characteristic can be avoided.
  • the structure of the individual XMR sensors thus makes it possible to realize the application-relevant sensor properties, namely the linearity, the hysteresis freedom and the adaptability of the sensor.
  • FIG. 1 is a schematic diagram of a current sensor according to the invention in the de-energized state with sensor elements arranged according to the invention
  • FIG. 2 is a schematic diagram of the current sensor of FIG. 1 with the sensor elements in the usual representation of a bridge arrangement
  • FIG. 4 shows a schematic representation of a layer structure of a GMR sensor element of a current sensor as shown in FIGS. 1 and 2, FIG. 4 shows the current sensor from FIG.
  • FIG. 5 is a schematic representation of the individual layer magnetizations or light axes
  • FIG. 6 is a schematic diagram of the position of the anisotropies within the layer stack.
  • 1 shows a current sensor 1 according to the invention comprising a U-shaped current conductor 2 with two substantially parallel conductor legs 3, 4, via which current conductor 2 the direct current to be measured flows, which flows at one side of the current conductor 3 and flows away again at the other conductor branch ,
  • the current sensor 1 can be embodied as a discrete chip or as a discrete component, with the corresponding ⁇ maschinetechniksan somebodyn the current line for the integration of the current sensor into corresponding board modules (z. B. PCB or PCB DCB) to enable.
  • a bridge circuit 5 which is constructed with four XMR sensor elements.
  • GMR Giant Magneto Re ⁇ sistance
  • TMR Tunneling Magneto Resistance
  • Each GMR sensor element is constructed in a known manner as a layer stack of different individual layers, which will be discussed below.
  • each GMR sensor element 6 - 9 has a reference layer with a reference layer magnetization R, wherein all reference layer magnetizations R are unidirectionally aligned and perpendicular to the respective adjacent conductor leg 3 or 4. This unidirectional alignment makes it possible to condition all reference layers in a single step in a common magnetic field.
  • each of the GMR sensor element 6 - 9 a Detek- tion layer having a upon application of an external magnetic ⁇ field rotatable detecting layer magnetization D, which if so, no current flows in the non-energized state, on the conductor 2, as shown in Fig's 1,. is substantially perpendicular to the reference layer magnetization R and preferably also unidirectionally aligned, so that the detection layer magnetizations of all sensor elements can be formed in a common manufacturing step in the magnetic field from ⁇ .
  • the GMR sensor elements 6-9 are connected to a bridge and make it possible to detect the current flowing between the two current conductor legs 3, 4 gradient field over the current conductor 2.
  • the measurement signal which is proportional to the in-plane gradient field at current flow, is detected at the taps or outputs S1 / S2, at which therefore the output signal of the bridge circuit 5 is tapped.
  • the magnetizations R and D Due to the embodiment of the GMR sensor elements 6-9 as spin valves in conjunction with the crossed anisotropy or the crossed magnetizations R and D, a proportionality of the magnetoresistive signal of a GMR sensor element to the angle results, the magnetizations R and D to each other assume, in a range of 180 °, that is, the angular component of the rotating magnetization vector of the detection magnetization D is proportional to the field strength of the applied uniaxial field at the respective current conductor 3 or 4, from which, measured after the in-plane gradient field is, also a proportional, linearönsig ⁇ nal over the entire bridge circuit 5 results.
  • the orientations of the reference layer magnetizations R of the individual sensor elements are aligned antiparallel within each branch, the orientation of these magnetizations being different from the diagonally opposite ones.
  • ordered sensor elements 6, 8 and 7, 9 are rectified from different bridge branches respectively. He is also ⁇ clear that the conductor limbs 3 and 4 respectively dia gonal ⁇ sensor elements 6, 8 and 7, respectively assigned different from ckenzweigen-nesting,. 9
  • the arrangement of the individual sensor elements shown in the figure is modified such that the current conductor legs 3 and 4 form a U-shaped current conductor and thereby point the reference layer magnetizations R of all sensor elements in the same direction (ie unidirectionally).
  • the current flow is supplied via the left in the figure left current conductor leg 3 (Im) and on the right current conductor leg 4 dissipated (I ou t) • Form due to the current flow in current flow for the current sensor of FIG Thigh-specific magnetic fields that rotate the detection layer magnetization D of the respective adjacent GMR sensor elements 6-9, that is, the respective detection layer magnetization D follows the applied field.
  • the detection layer magnetizations of the GMR sensor elements 6 and 8 are parallel to the reference layer magnetization R, while the detection layer magnetization D of the sensor elements 7, 9 are rotated in the opposite, antiparallel direction.
  • FIG. 4 shows, in the form of a schematic diagram, the basic structure of a GMR sensor element, here exemplarily the sensor element 6.
  • An upper termination or seed layer 10 is followed by a layer 11 of an antiferromagnet, preferably a natural antiferromagnet, which is exchange-coupled with the adjoining reference layer 12 is.
  • This reference layer 12 may be, for example, an artificial antiferromagnet.
  • Separated by a non-magnetic decoupling layer 13 is the detection layer 14, which in turn pinned via a subsequent layer 15 of an antiferromagnetic material as well as the reference layer 12, that is exchange-coupled. From the ⁇ circuit also forms a termination or seed layer 16th
  • a typical layer stack can be represented as follows:
  • Terminal or seed layer 10 Ta5 / NiFe2
  • Natural antiferromagnetic layer 11 IrMnIO reference layer 12 (artificial antiferromagnet): CoFe4, 5 / RuO, 8 / CoFe4
  • Decoupling layer 13 Cu3 detection layer 14: CoFeO, 8 / NiFe20 Natural antiferromagnet layer 15: IrMnIO termination or seed layer 16: Ta5 / CuO, 8.
  • FIG. 5 shows a vertically oriented pinning direction defined by the natural antiferromagnet layer 11, which is exchange-coupled to the reference layer 12, followed by the easy axis of the reference layer, which is necessarily parallel thereto.
  • the easy axis of the detection layer 14 is orthogonal thereto, that is, shown horizontally in FIG. 5, corresponding to the pinning direction via the natural antiferromagnet layer 15.
  • FIG. 6 shows a schematic representation of the position of the individual anisotropies.
  • H e b represents the anisotropy resulting from the exchange bias field strength of the natural antiferromagnetic layer 11. It is a unidirectional pinning direction that, as stated, pegs the unidirectional reference layer magnetizations.
  • Perpendicular to the exchange-bias field strength is the featured with H ind ge ⁇ coating induced anisotropy field of the detecting layer 14, which is uniaxial.
  • FIG. 6 also shows the second exchange bias field strength H e b2, which is induced via the natural antiferromagnetic layer 15 pinned by the detection layer and which likewise lies in the strip longitudinal direction.
  • the coating-induced anisotropic field strength H ind the shape anisotropy field strength H sh and the (optionally optional) exchange bias field strength H e b2 are responsible for the strength of the detection layer anisotropy.
  • the sum of the orange-peel coupling field strength H acts counter to this detection layer anisotropy Fer ro and H fer ro oppositely oriented stray field coupling strength H SF •
  • H SF anisotropy Fer ro and H fer ro oppositely oriented stray field coupling strength
  • the sensor signal which can be picked off via the bridge circuit 5 can advantageously be adjusted so that hystereses and non-individualities of the characteristic can be largely avoided.
  • an additional intrinsic uniaxial anisotropy is given if appropriate materials such as, for. B. permalloy can be used, this uniaxial Ani ⁇ sotropie additionally acts to increase the anisotropic starch.
  • the DC current sensor according to the invention offers the possibility of being able to measure galvanically isolated direct currents. Due to the intrinsic shielding of the bridge circuit 5 and the magnetic field gradient measurement are superimposed homogeneous external magnetic fields, not from the current supply of the associated current conductor, suppressed to a certain extent, so do not affect the output signal. The evaluation of the in-plane magnetization vector of the XMR spin valve elements with crossed anisotropy enables this extraneous field suppression.

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  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

L'invention concerne un capteur de courant permettant la mesure de courant, en particulier la mesure de courant continu, à séparation galvanique, lequel capteur comprend un conducteur (2) en U, au-dessus ou au-dessous duquel est placé un circuit en pont (5) servant à détecter le champ magnétique à gradient, proportionnel au courant, produit lorsque le courant circule entre les branches (3, 4) du conducteur, lequel circuit est composé de quatre éléments de détection XMR (6, 7, 8, 9) en particulier du type GMR ou TMR, parmi lesquels deux sont associés à une branche (3, 4) du conducteur (2), ces élément de détection XMR (6, 7, 8, 9) étant conçus sous la forme de vannes de spins présentant une aimantation de couches de référence (R) permanente et une aimantation de couches de détection (D) pouvant tourner sous l'effet du champ magnétique produit lorsque le courant passe dans la branche de conducteur associée (3, 4), les aimantations de couches de référence (R) de tous les éléments de détection XMR (6, 7, 8, 9) étant unidirectionnelles et perpendiculaires à la branche de conducteur associée (3, 4) et les aimantations de couches de détection (D) formant un angle de 80° à 100° avec l'aimantation de couches de référence associée (R).
PCT/EP2006/063392 2005-06-23 2006-06-21 Capteur de courant permettant la mesure de courant a separation galvanique WO2006136577A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102005029269.0 2005-06-23
DE102005029269 2005-06-23
DE102006021774.8A DE102006021774B4 (de) 2005-06-23 2006-05-10 Stromsensor zur galvanisch getrennten Strommessung
DE102006021774.8 2006-05-10

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