WO2006126027A3 - Module de capteur de rayonnement - Google Patents

Module de capteur de rayonnement Download PDF

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Publication number
WO2006126027A3
WO2006126027A3 PCT/GB2006/050123 GB2006050123W WO2006126027A3 WO 2006126027 A3 WO2006126027 A3 WO 2006126027A3 GB 2006050123 W GB2006050123 W GB 2006050123W WO 2006126027 A3 WO2006126027 A3 WO 2006126027A3
Authority
WO
WIPO (PCT)
Prior art keywords
elements
substrate
light
sensor module
light sensor
Prior art date
Application number
PCT/GB2006/050123
Other languages
English (en)
Other versions
WO2006126027A2 (fr
Inventor
Alan Mathewson
John Carlton Jackson
Joseph O'keeffe
Original Assignee
Sensl Technologies Ltd
Alan Mathewson
John Carlton Jackson
Joseph O'keeffe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensl Technologies Ltd, Alan Mathewson, John Carlton Jackson, Joseph O'keeffe filed Critical Sensl Technologies Ltd
Publication of WO2006126027A2 publication Critical patent/WO2006126027A2/fr
Publication of WO2006126027A3 publication Critical patent/WO2006126027A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un module de capteur de rayonnement (1) comprenant une pluralité d'éléments de détection de rayonnement (2) disposés sur un substrat (4). Le module peut être mis en oeuvre selon un mode de fonctionnement selon lequel les éléments coopèrent pendant l'utilisation aux fins de production d'un signal de sortie combiné indiquant un niveau global de rayonnement tombant sur les éléments (2). Dans un exemple, chaque élément (2) comprend une surface d'entrée de rayonnement (16) disposée de manière être opposée au substrat (4) et une surface opposée (18) disposée de manière à être en face du substrat (4). Chaque élément (2) est disposé de manière à établir une connexion électrique (8) avec le substrat (4) par le biais de la surface opposée (18), laissant les côtés (19) de l'élément (2) sensiblement libres, de manière que les éléments adjacents (2) puissent être proches les uns des autres, afin de former un agencement en mosaïque de ceux-ci (2) couvrant une zone importante.
PCT/GB2006/050123 2005-05-27 2006-05-26 Module de capteur de rayonnement WO2006126027A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0510760A GB2426576A (en) 2005-05-27 2005-05-27 Light sensor module comprising a plurality of elements in a close-tiled arrangement
GB0510760.2 2005-05-27

Publications (2)

Publication Number Publication Date
WO2006126027A2 WO2006126027A2 (fr) 2006-11-30
WO2006126027A3 true WO2006126027A3 (fr) 2007-02-22

Family

ID=34834682

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2006/050123 WO2006126027A2 (fr) 2005-05-27 2006-05-26 Module de capteur de rayonnement

Country Status (2)

Country Link
GB (1) GB2426576A (fr)
WO (1) WO2006126027A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2290721C2 (ru) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
GB2451447B (en) * 2007-07-30 2012-01-11 Sensl Technologies Ltd Light sensor
GB2451678A (en) 2007-08-10 2009-02-11 Sensl Technologies Ltd Silicon photomultiplier circuitry for minimal onset and recovery times
BE1017898A3 (nl) * 2007-12-14 2009-10-06 Technology & Design B V B A Sorteerapparaat en werkwijze voor het sorteren van producten.
DE102009030467A1 (de) 2009-06-23 2011-01-05 Carl Zeiss Meditec Ag Vorrichtung und Verfahren zur Aufnahme hochdynamischer Fundus- und Spaltbilder
FR2951834A1 (fr) 2009-10-22 2011-04-29 Axint Un dispositif a sondes multiples pour la detection multi-sites de radioactivite gamma
JP5832852B2 (ja) 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP5895504B2 (ja) * 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム
JP6186038B2 (ja) * 2016-04-25 2017-08-23 浜松ホトニクス株式会社 半導体光検出素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004008537A2 (fr) * 2002-07-11 2004-01-22 Qinetiq Limited Circuits photodetecteurs
WO2004054235A1 (fr) * 2002-12-09 2004-06-24 Quantum Semiconductor Llc Circuit pour capteurs d'image a photodiodes a avalanche
WO2004102680A1 (fr) * 2003-05-14 2004-11-25 University College Cork - National University Of Ireland, Cork A photodiode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252852A (en) * 1989-03-14 1993-10-12 Fujitsu Limited Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration
WO2004027879A2 (fr) * 2002-09-19 2004-04-01 Quantum Semiconductor Llc Dispositif de detection de lumiere

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004008537A2 (fr) * 2002-07-11 2004-01-22 Qinetiq Limited Circuits photodetecteurs
WO2004054235A1 (fr) * 2002-12-09 2004-06-24 Quantum Semiconductor Llc Circuit pour capteurs d'image a photodiodes a avalanche
WO2004102680A1 (fr) * 2003-05-14 2004-11-25 University College Cork - National University Of Ireland, Cork A photodiode

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALBOTA M A ET AL: "Three-dimensional imaging laser radars with Geiger-mode avalanche photodiode arrays", LINCOLN LABORATORY JOURNAL LINCOLN LAB. MIT USA, vol. 13, no. 2, 2002, pages 351 - 370, XP002396309, ISSN: 0896-4130 *
OTTE A NEPOMUK ET AL: "Prospects of using silicon photomultipliers for the astroparticle physics experiments EUSO and MAGIC", IEEE NUCL. SCI. SYMP. CONF. REC.; IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD; 2004 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD 2004, vol. 2, 2004, pages 1044 - 1048, XP002396308 *
SHAH K S ET AL: "Large-Area APDs and Monolithic APD Arrays", IEEE TRANSACTIONS ON NUCLEAR SCIENCE, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 48, no. 6, December 2001 (2001-12-01), XP011042281, ISSN: 0018-9499 *

Also Published As

Publication number Publication date
GB2426576A (en) 2006-11-29
WO2006126027A2 (fr) 2006-11-30
GB0510760D0 (en) 2005-06-29

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