GB0510760D0 - Light sensor module - Google Patents

Light sensor module

Info

Publication number
GB0510760D0
GB0510760D0 GB0510760A GB0510760A GB0510760D0 GB 0510760 D0 GB0510760 D0 GB 0510760D0 GB 0510760 A GB0510760 A GB 0510760A GB 0510760 A GB0510760 A GB 0510760A GB 0510760 D0 GB0510760 D0 GB 0510760D0
Authority
GB
United Kingdom
Prior art keywords
sensor module
light sensor
light
module
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0510760A
Other versions
GB2426576A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sensl Technologies Ltd
Original Assignee
Sensl Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensl Technologies Ltd filed Critical Sensl Technologies Ltd
Priority to GB0510760A priority Critical patent/GB2426576A/en
Publication of GB0510760D0 publication Critical patent/GB0510760D0/en
Priority to PCT/GB2006/050123 priority patent/WO2006126027A2/en
Publication of GB2426576A publication Critical patent/GB2426576A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
GB0510760A 2005-05-27 2005-05-27 Light sensor module comprising a plurality of elements in a close-tiled arrangement Withdrawn GB2426576A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0510760A GB2426576A (en) 2005-05-27 2005-05-27 Light sensor module comprising a plurality of elements in a close-tiled arrangement
PCT/GB2006/050123 WO2006126027A2 (en) 2005-05-27 2006-05-26 Light sensor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0510760A GB2426576A (en) 2005-05-27 2005-05-27 Light sensor module comprising a plurality of elements in a close-tiled arrangement

Publications (2)

Publication Number Publication Date
GB0510760D0 true GB0510760D0 (en) 2005-06-29
GB2426576A GB2426576A (en) 2006-11-29

Family

ID=34834682

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0510760A Withdrawn GB2426576A (en) 2005-05-27 2005-05-27 Light sensor module comprising a plurality of elements in a close-tiled arrangement

Country Status (2)

Country Link
GB (1) GB2426576A (en)
WO (1) WO2006126027A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2290721C2 (en) 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Silicon photoelectronic multiplier (alternatives) and locations for silicon photoelectronic multiplier
GB2451447B (en) * 2007-07-30 2012-01-11 Sensl Technologies Ltd Light sensor
GB2451678A (en) 2007-08-10 2009-02-11 Sensl Technologies Ltd Silicon photomultiplier circuitry for minimal onset and recovery times
BE1017898A3 (en) 2007-12-14 2009-10-06 Technology & Design B V B A SORTING DEVICE AND METHOD FOR SORTING PRODUCTS.
DE102009030467A1 (en) 2009-06-23 2011-01-05 Carl Zeiss Meditec Ag Device for recording high-dynamic fundus- and slit images of human eyes during e.g. examining cataract operations, has sensor-arrays comprising connections to evaluation unit, and beam splitter distributing light from eyes to sensor-arrays
FR2951834A1 (en) 2009-10-22 2011-04-29 Axint MULTI-PROBE DEVICE FOR MULTI-SITE DETECTION OF GAMMA RADIOACTIVITY
JP5791461B2 (en) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 Photodetector
JP5832852B2 (en) 2011-10-21 2015-12-16 浜松ホトニクス株式会社 Photodetector
JP5895504B2 (en) * 2011-12-15 2016-03-30 ソニー株式会社 Imaging panel and imaging processing system
JP6186038B2 (en) * 2016-04-25 2017-08-23 浜松ホトニクス株式会社 Semiconductor photo detector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252852A (en) * 1989-03-14 1993-10-12 Fujitsu Limited Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration
GB0216075D0 (en) * 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
WO2004027879A2 (en) * 2002-09-19 2004-04-01 Quantum Semiconductor Llc Light-sensing device
ATE336140T1 (en) * 2002-12-09 2006-09-15 Quantum Semiconductor Llc CIRCUIT FOR IMAGE SENSORS WITH AVALANCHE PHOTODIODS
EP1623466A1 (en) * 2003-05-14 2006-02-08 University College Cork-National University of Ireland, Cork A photodiode

Also Published As

Publication number Publication date
GB2426576A (en) 2006-11-29
WO2006126027A2 (en) 2006-11-30
WO2006126027A3 (en) 2007-02-22

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)