WO2006123881A1 - Silicon-germanium photodiode for image sensor - Google Patents

Silicon-germanium photodiode for image sensor Download PDF

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Publication number
WO2006123881A1
WO2006123881A1 PCT/KR2006/001817 KR2006001817W WO2006123881A1 WO 2006123881 A1 WO2006123881 A1 WO 2006123881A1 KR 2006001817 W KR2006001817 W KR 2006001817W WO 2006123881 A1 WO2006123881 A1 WO 2006123881A1
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WO
WIPO (PCT)
Prior art keywords
silicon
photodiode
germanium
alloy layer
germanium alloy
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Application number
PCT/KR2006/001817
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French (fr)
Inventor
Byoung Su Lee
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Siliconfile Technologies Inc.
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Publication date
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Publication of WO2006123881A1 publication Critical patent/WO2006123881A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Definitions

  • Image sensors are devices used to measure the intensity of light.
  • an image sensor includes a plurality of photodiodes, which are made of silicon-based materials.
  • a silicon- germanium photodiode for an image sensor used for measuring intensity of incident light
  • the silicon-germanium photodiode comprising: a silicon substrate; a silicon- germanium alloy layer formed on the silicon substrate; and a photodiode region formed on the silicon-germanium alloy layer by a doping process.
  • a silicon- germanium photodiode for an image sensor used for measuring intensity of incident light
  • the silicon-germanium photodiode comprising: a silicon substrate; a silicon- germanium alloy layer formed on the silicon substrate and doped with a first type dopant; an insulation layer formed on the silicon-germanium alloy layer; a photodiode region formed on the silicon-germanium alloy layer by doping and doped with a second type dopant; and a surface doping region formed on the photodiode so as to bury the photodiode and doped with the first type dopant.
  • a sihcon- germanium photodiode for an image sensor used for measuring intensity of incident light, the photodiode comprising: a silicon substrate; a silicon-germanium alloy layer formed on the silicon substrate by doping so as to serve as a photodiode; and a silicon layer formed on the silicon-germanium alloy layer.
  • FIG. 1 is schematic diagram illustrating a silicon-germanium photodiode for an image sensor according to an embodiment of the present invention
  • FIG. 2 is a diagram illustrating a circuit of a silicon-germanium photodiode according to an embodiment of the present invention.
  • FIG. 3 is a diagram illustrating a circuit of a silicon-germanium photodiode according to another embodiment of the present invention. Best Mode for Carrying Out the Invention
  • FIG. 1 is schematic diagram illustrating a silicon-germanium photodiode for an image sensor according to an embodiment of the present invention.
  • a silicon-germanium alloy layer 110 containing germanium in a range of 0 1 to 15 wt% with respect to a weight of silicon-germanium alloy with a predetermined thickness is formed by epitaxial growth, and a photodiode region 120 is formed onthe silicon-germanium alloy layer 110 by doping.
  • the silicon-germanium alloy layer 110 is doped with a first type dopant, and the photodiode region is doped with a second type dopant to function as a diode.
  • FIG. 2 is a diagram illustrating a circuit of a silicon-germanium photodiode according to an embodiment of the present invention
  • a silicon-germanium alloy layer 210 formed on a silicon substrate 200 by epitaxial growth is doped with a first type dopant, and an insulation layer 220 is formed on the silicon-germanium alloy layer 210.
  • a photodiode region 230 doped with a second type dopant is formed, and a surface doping region 240 doped with a first type dopant so as to prevent charges from moving out of the photodiode region 230 to a surface or moving in from the surface is formed to bury a photodiode.
  • FIG. 3 is a diagram illustrating a circuit of a silicon-germanium photodiode according to another embodiment of the present invention.
  • a silicon-germanium alloy layer 320 functions as a photodiode by forming the silicon-germanium alloy layer 320 containing germanium in a range of 0 1 to 15 wt% in a region corresponding to a photodiode on a silicon substrate doped with a first type dopant and by doping the silicon-germanium alloy layer 320 with a second type dopant.
  • a silicon layer 330 doped with the first type dopant is formed on the silicon- germanium alloy layer 320 to prevent charges from moving to the silicon-germanium alloy layer 320 from the silicon surface. And the charges can be transported the same way as described with reference to FIG 2 using a gate 340 and a floating diffusion region 350.
  • the second type dopant is an N type dopant, whereas the first type dopant is a P type dopant.
  • the present invention relates to a method in which the characteristics such as high-speed response of silicon-germanium alloyand superior sensitivity of light of germanium can be used and a conventional process for manufacturing silicon-based photodiodes can be used without any modification by using a conventional silicon substrate.
  • the thickness growth is too small to be used for a photodiode. Accordingly, in the state that the germanium-to- silicon ratio of the silicon-germanium alloy layer is confined to a range of 0.1% to 15% according to an embodiment of the present invention, the silicon-germanium alloy layer having a predetermined thickness grows in an epitaxial manner A photodiode is formed on the silicon-germanium alloy layer.
  • a conventional process for manufacturing silicon-based photodiodes without any modification can be used It is possible to manufacture an image sensor having an improved light sensitivity over a conventional silicon-based photodiode by using a silicon-germanium alloy layer as the photodiode, a small size, and a high operating speed.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

A photodiode for an image sensor having an improved light sensitivity and decrease in size over a silicon-based photodiode and a manufacturing method of the photodiode are provided. The photodiode for the image sensor has a silicon-germanium alloy layer, which contains germanium of 0.1 to 15 wt% with respect to a weight of silicon-germanium alloy, formed on a silicon substrate and a photodioderegion formed on the silicon-germanium alloy layer. Since the light absorbance of germanium is high, the photodiode in which a relatively thin silicon- germanium alloy layer is formed has a superior property of optical sensing to a conventional silicon-based image sensor. Accordingly, the silicon-germanium alloy layer thinner than a silicon layer used in a conventional image sensor can be used for absorbing sufficient light so as to decrease in size of the image sensor using the photodiode. In addition, it is possible to operate the photodiode at a high speed due to rapid transport of charges in the silicon-germanium alloy layer.

Description

Description SILICON-GERMANIUM PHOTODIODE FOR IMAGE SENSOR
Technical Field
[1] The present invention relates to a photodiode for an image sensor, and more particularly, to a photodiode for an image sensor which has remarkable enhancement in light sensitivity, decrease in size, and increase in speed over a silicon-based photodiode. Background Art
[2] Image sensors are devices used to measure the intensity of light. Generally, an image sensor includes a plurality of photodiodes, which are made of silicon-based materials.
[3] However, conventional photo diodes for an image sensor using silicon-based materials have a relatively low sensitivity of light and a large penetration depth, especially for a wavelength band corresponding to a red wavelength range. The large penetration depth of light results in creating a deep region at the photo sensor and accordingly causes a problem of generating crosstalk. In addition, a photodiode having a large area is required to obtain a sufficient signal strength due to a property of weak light absorbance of a silicon semiconductor, so that there is an obstacle for decrease in size of the photodiode. In addition, there is a problem that it is difficult to operate the image sensor at a high speed due to low mobility of charges in silicon.
Disclosure of Invention Technical Problem
[4] In order to solve the aforementioned problems, an object of the present invention is to provide a photodiode for an image sensor which has improved light sensitivity and a small size over an image sensor using a silicon-based photodiode by using a silicon- germanium alloy layer, which can operate at a high speed, and which can be manufactured by using a conventional manufacturing process for the silicon-based photodiode without any modification. Technical Solution
[5] According to an aspect of the present invention, there is provided a silicon- germanium photodiode for an image sensor used for measuring intensity of incident light, the silicon-germanium photodiode comprising: a silicon substrate; a silicon- germanium alloy layer formed on the silicon substrate; and a photodiode region formed on the silicon-germanium alloy layer by a doping process.
[6] According to another aspect of the present invention, there is provided a silicon- germanium photodiode for an image sensor used for measuring intensity of incident light, the silicon-germanium photodiode comprising: a silicon substrate; a silicon- germanium alloy layer formed on the silicon substrate and doped with a first type dopant; an insulation layer formed on the silicon-germanium alloy layer; a photodiode region formed on the silicon-germanium alloy layer by doping and doped with a second type dopant; and a surface doping region formed on the photodiode so as to bury the photodiode and doped with the first type dopant.
[7] According to another aspect of the present invention, there is provided a sihcon- germanium photodiode for an image sensor used for measuring intensity of incident light, the photodiode comprising: a silicon substrate; a silicon-germanium alloy layer formed on the silicon substrate by doping so as to serve as a photodiode; and a silicon layer formed on the silicon-germanium alloy layer. Brief Description of the Drawings
[8] FIG. 1 is schematic diagram illustrating a silicon-germanium photodiode for an image sensor according to an embodiment of the present invention;
[9] FIG. 2 is a diagram illustrating a circuit of a silicon-germanium photodiode according to an embodiment of the present invention; and
[10] FIG. 3 is a diagram illustrating a circuit of a silicon-germanium photodiode according to another embodiment of the present invention. Best Mode for Carrying Out the Invention
[11] Hereinafter, the present invention will be described in detail with reference to accompanying drawings
[12] FIG. 1 is schematic diagram illustrating a silicon-germanium photodiode for an image sensor according to an embodiment of the present invention.
[13] On a silicon substrate 100, a silicon-germanium alloy layer 110 containing germanium in a range of 0 1 to 15 wt% with respect to a weight of silicon-germanium alloy with a predetermined thickness is formed by epitaxial growth, and a photodiode region 120 is formed onthe silicon-germanium alloy layer 110 by doping.
[14] In the resultant structure, the silicon-germanium alloy layer 110 is doped with a first type dopant, and the photodiode region is doped with a second type dopant to function as a diode.
[15] FIG. 2 is a diagram illustrating a circuit of a silicon-germanium photodiode according to an embodiment of the present invention
[16] A silicon-germanium alloy layer 210 formed on a silicon substrate 200 by epitaxial growth is doped with a first type dopant, and an insulation layer 220 is formed on the silicon-germanium alloy layer 210. In the silicon-germanium alloy layer 210, a photodiode region 230 doped with a second type dopant is formed, and a surface doping region 240 doped with a first type dopant so as to prevent charges from moving out of the photodiode region 230 to a surface or moving in from the surface is formed to bury a photodiode.
[17] Accordingly, charges generated by light incident on the photodiode region 230 are trapped in the photodiode region 230, without moving to the surface or a lower portion of the substrate. A floating diffusion region 260 doped with a second type dopant is formed to transport the charges trapped in the photodiode region 230, and a gate 250 for controlling the transport of the charges is exemplified. When a predetermined voltage is applied to the gate 250, the charges trapped in the photodiode region 230 transports into the floating diffusion region 260
[18] FIG. 3 is a diagram illustrating a circuit of a silicon-germanium photodiode according to another embodiment of the present invention.
[19] A silicon-germanium alloy layer 320 functions as a photodiode by forming the silicon-germanium alloy layer 320 containing germanium in a range of 0 1 to 15 wt% in a region corresponding to a photodiode on a silicon substrate doped with a first type dopant and by doping the silicon-germanium alloy layer 320 with a second type dopant.
[20] A silicon layer 330 doped with the first type dopant is formed on the silicon- germanium alloy layer 320 to prevent charges from moving to the silicon-germanium alloy layer 320 from the silicon surface. And the charges can be transported the same way as described with reference to FIG 2 using a gate 340 and a floating diffusion region 350.
[21] In the first and second type dopants according to the embodiments of the present invention illustrated in FIGS. 1 to 3, the second type dopant is an N type dopant, whereas the first type dopant is a P type dopant.
[22] Researches on the silicon-germanium alloy of which charge mobility is higher than that of silicon have been widely carried out as a method of manufacturing elements capable of operating at a high speed The present invention relates to a method in which the characteristics such as high-speed response of silicon-germanium alloyand superior sensitivity of light of germanium can be used and a conventional process for manufacturing silicon-based photodiodes can be used without any modification by using a conventional silicon substrate.
[23] It is well known that crystals of a germanium layer on a silicon layer do not grow two-dimensionally with a thickness larger than that of about ten single atoms The silicon-germanium alloy is also known to have a characteristic similar to germanium. In other words, only crystals of the silicon-germanium alloy layer having a small thickness can grow as a germamum-to- silicon ratio increases.
[24] However, in a silicon-germanium alloy having a germanium- to- silicon ratio above
15%, the thickness growth is too small to be used for a photodiode. Accordingly, in the state that the germanium-to- silicon ratio of the silicon-germanium alloy layer is confined to a range of 0.1% to 15% according to an embodiment of the present invention, the silicon-germanium alloy layer having a predetermined thickness grows in an epitaxial manner A photodiode is formed on the silicon-germanium alloy layer.
[25] While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims Industrial Applicability
[26] Accordingly, m the method of manufacturing a photodiode for an image sensor according to an embodiment of the present invention, a conventional process for manufacturing silicon-based photodiodes without any modification can be used It is possible to manufacture an image sensor having an improved light sensitivity over a conventional silicon-based photodiode by using a silicon-germanium alloy layer as the photodiode, a small size, and a high operating speed.

Claims

Claims
[1] A silicon-germanium photodiode for an image sensor used for measuring intensity of incident light, the silicon-germanium photodiode comprising: a silicon substrate; a silicon-germanium alloy layer formed on the silicon substrate; and a photodiode region formed on the silicon-germanium alloy layer by a doping process. [2] The silicon-germanium photodiode of claim 1, wherein the silicon-germanium alloy layer is doped with a first type dopant, and wherein the photodiode region is doped with a second type dopant. [3] A silicon-germanium photodiode for an image sensor used for measuring intensity of incident light, the silicon-germanium photodiode comprising: a silicon substrate; a silicon-germanium alloy layer formed on the silicon substrate and doped with a first type dopant; an insulation layer formed on the silicon-germanium alloy layer; a photodiode formed on the silicon-germanium alloy layer by doping and doped with a second type dopant; and a surface doping region formed on the photodiode so as to bury the photodiode and doped with the first type dopant. [4] A silicon-germanium photodiode for an image sensor used for measuring intensity of incident light, the photodiode comprising. a silicon substrate; a silicon-germanium alloy layer formed on the silicon substrate by doping so as to serve as a photodiode; and a silicon layer formed on the silicon-germanium alloy layer. [5] The silicon-germanium photodiode of claim 4, wherein the silicon substrate is doped with a first type dopant, wherein the silicon-germanium alloy layer is doped with a second type dopant, and wherein the silicon layer formed on the silicon-germanium alloy layer is doped with the first type dopant. [6] The silicon-germanium photodiode of any one of claims 1 to 5, wherein the silicon-germanium alloy layer is made of Sil-xGex, where x is in a range of 0.001 to 0.15.
PCT/KR2006/001817 2005-05-20 2006-05-16 Silicon-germanium photodiode for image sensor WO2006123881A1 (en)

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KR1020050042299A KR100706743B1 (en) 2005-05-20 2005-05-20 Si-Ge photodiode used image sensor

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3000605A1 (en) * 2012-12-31 2014-07-04 St Microelectronics Crolles 2 Pinch photodiode for use in image sensor, has N-type region provided between P-type silicon substrate or box and P-type strongly doped region, where P-type region is made of silicon, and N-type region is made of silicon-germanium
US11335824B2 (en) 2017-11-24 2022-05-17 Ams Ag Near-infrared photodetector semiconductor device
US11923467B2 (en) 2019-06-18 2024-03-05 Ams Ag Semiconductor device for infrared detection, method of manufacturing semiconductor device for infrared detection and infrared detector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101750742B1 (en) 2011-10-14 2017-06-28 삼성전자주식회사 Photodetector structure

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JP2001345436A (en) * 2000-05-30 2001-12-14 Sharp Corp Photosensitive element with built-in circuit
KR20030001113A (en) * 2001-06-28 2003-01-06 주식회사 하이닉스반도체 Fabricating method of Image sensor
KR20030001116A (en) * 2001-06-28 2003-01-06 주식회사 하이닉스반도체 Image sensor and fabricating method of the same
KR20030049109A (en) * 2001-12-14 2003-06-25 주식회사 하이닉스반도체 Fabricating method of Image sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345436A (en) * 2000-05-30 2001-12-14 Sharp Corp Photosensitive element with built-in circuit
KR20030001113A (en) * 2001-06-28 2003-01-06 주식회사 하이닉스반도체 Fabricating method of Image sensor
KR20030001116A (en) * 2001-06-28 2003-01-06 주식회사 하이닉스반도체 Image sensor and fabricating method of the same
KR20030049109A (en) * 2001-12-14 2003-06-25 주식회사 하이닉스반도체 Fabricating method of Image sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3000605A1 (en) * 2012-12-31 2014-07-04 St Microelectronics Crolles 2 Pinch photodiode for use in image sensor, has N-type region provided between P-type silicon substrate or box and P-type strongly doped region, where P-type region is made of silicon, and N-type region is made of silicon-germanium
US11335824B2 (en) 2017-11-24 2022-05-17 Ams Ag Near-infrared photodetector semiconductor device
US11923467B2 (en) 2019-06-18 2024-03-05 Ams Ag Semiconductor device for infrared detection, method of manufacturing semiconductor device for infrared detection and infrared detector

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KR20060119359A (en) 2006-11-24

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