WO2006114424A3 - Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter - Google Patents

Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter Download PDF

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Publication number
WO2006114424A3
WO2006114424A3 PCT/EP2006/061834 EP2006061834W WO2006114424A3 WO 2006114424 A3 WO2006114424 A3 WO 2006114424A3 EP 2006061834 W EP2006061834 W EP 2006061834W WO 2006114424 A3 WO2006114424 A3 WO 2006114424A3
Authority
WO
WIPO (PCT)
Prior art keywords
controllable semiconductor
semiconductor diode
electronic component
voltage converter
state
Prior art date
Application number
PCT/EP2006/061834
Other languages
English (en)
French (fr)
Other versions
WO2006114424A2 (de
Inventor
Hans-Guenter Eckel
Original Assignee
Siemens Ag
Hans-Guenter Eckel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Hans-Guenter Eckel filed Critical Siemens Ag
Priority to EP06754857A priority Critical patent/EP1875513A2/de
Priority to JP2008508217A priority patent/JP2008539571A/ja
Publication of WO2006114424A2 publication Critical patent/WO2006114424A2/de
Publication of WO2006114424A3 publication Critical patent/WO2006114424A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Steuerbare Halbleiterdiode mit mindestens einem pn-Übergang, die zwischen einem ersten Zustand und einem zweiten Zustand umschaltbar ist, wobei der zweite Zustand im Vergleich zum ersten Zustand einen höheren Durchlasswiderstand und eine kleinere Speicherladung aufweist, mit einer den pn-Übergang überbrückenden Reihenschaltung aus einem Schottky-Diodenabschnitt und einem MOSFET-Abschnitt .
PCT/EP2006/061834 2005-04-28 2006-04-26 Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter WO2006114424A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP06754857A EP1875513A2 (de) 2005-04-28 2006-04-26 Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter
JP2008508217A JP2008539571A (ja) 2005-04-28 2006-04-26 可制御半導体ダイオード、電子部品および電圧中間形コンバータ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005019860A DE102005019860B4 (de) 2005-04-28 2005-04-28 Steuerbare Halbleiterdiode, elektronisches Bauteil und Spannungszwischenkreisumrichter
DE102005019860.0 2005-04-28

Publications (2)

Publication Number Publication Date
WO2006114424A2 WO2006114424A2 (de) 2006-11-02
WO2006114424A3 true WO2006114424A3 (de) 2007-03-01

Family

ID=37025078

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/061834 WO2006114424A2 (de) 2005-04-28 2006-04-26 Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter

Country Status (4)

Country Link
EP (1) EP1875513A2 (de)
JP (1) JP2008539571A (de)
DE (1) DE102005019860B4 (de)
WO (1) WO2006114424A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415747B2 (en) * 2010-12-28 2013-04-09 Infineon Technologies Austria Ag Semiconductor device including diode
JP5804494B2 (ja) * 2011-05-18 2015-11-04 国立大学法人九州工業大学 半導体装置及びその駆動方法
JP6077309B2 (ja) * 2013-01-11 2017-02-08 株式会社豊田中央研究所 ダイオード及びダイオードを内蔵した半導体装置
CN107888056B (zh) 2013-07-10 2020-04-17 株式会社电装 驱动控制装置
JP2020013822A (ja) * 2018-07-13 2020-01-23 トヨタ自動車株式会社 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0133642A1 (de) * 1983-06-30 1985-03-06 Kabushiki Kaisha Toshiba Halbleiteranordnung mit einem DMOSFET
JPS63244777A (ja) * 1987-03-31 1988-10-12 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
JPH03110867A (ja) * 1989-09-26 1991-05-10 Nippon Inter Electronics Corp 縦型電界効果トランジスタ
GB2241111A (en) * 1990-02-15 1991-08-21 Mitsubishi Electric Corp Transistors integrated with diodes
US5362775A (en) * 1991-03-27 1994-11-08 Nippondenso Co., Ltd. Epoxy resin composition and cured product thereof
DE10148740A1 (de) * 2001-09-27 2003-04-17 Heidenhain Gmbh Dr Johannes Verfahren zur Erdschlussüberwachung eines Stromrichterantriebs

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2809253B2 (ja) * 1992-10-02 1998-10-08 富士電機株式会社 注入制御型ショットキーバリア整流素子
DE10308313B4 (de) * 2003-02-26 2010-08-19 Siemens Ag Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0133642A1 (de) * 1983-06-30 1985-03-06 Kabushiki Kaisha Toshiba Halbleiteranordnung mit einem DMOSFET
JPS63244777A (ja) * 1987-03-31 1988-10-12 Toshiba Corp Ｍｏｓ型電界効果トランジスタ
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
JPH03110867A (ja) * 1989-09-26 1991-05-10 Nippon Inter Electronics Corp 縦型電界効果トランジスタ
GB2241111A (en) * 1990-02-15 1991-08-21 Mitsubishi Electric Corp Transistors integrated with diodes
US5362775A (en) * 1991-03-27 1994-11-08 Nippondenso Co., Ltd. Epoxy resin composition and cured product thereof
DE10148740A1 (de) * 2001-09-27 2003-04-17 Heidenhain Gmbh Dr Johannes Verfahren zur Erdschlussüberwachung eines Stromrichterantriebs

Also Published As

Publication number Publication date
JP2008539571A (ja) 2008-11-13
WO2006114424A2 (de) 2006-11-02
DE102005019860B4 (de) 2010-11-18
DE102005019860A1 (de) 2006-11-02
EP1875513A2 (de) 2008-01-09

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