WO2006114424A3 - Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter - Google Patents
Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter Download PDFInfo
- Publication number
- WO2006114424A3 WO2006114424A3 PCT/EP2006/061834 EP2006061834W WO2006114424A3 WO 2006114424 A3 WO2006114424 A3 WO 2006114424A3 EP 2006061834 W EP2006061834 W EP 2006061834W WO 2006114424 A3 WO2006114424 A3 WO 2006114424A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- controllable semiconductor
- semiconductor diode
- electronic component
- voltage converter
- state
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000007704 transition Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Dc-Dc Converters (AREA)
Abstract
Steuerbare Halbleiterdiode mit mindestens einem pn-Übergang, die zwischen einem ersten Zustand und einem zweiten Zustand umschaltbar ist, wobei der zweite Zustand im Vergleich zum ersten Zustand einen höheren Durchlasswiderstand und eine kleinere Speicherladung aufweist, mit einer den pn-Übergang überbrückenden Reihenschaltung aus einem Schottky-Diodenabschnitt und einem MOSFET-Abschnitt .
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008508217A JP2008539571A (ja) | 2005-04-28 | 2006-04-26 | 可制御半導体ダイオード、電子部品および電圧中間形コンバータ |
EP06754857A EP1875513A2 (de) | 2005-04-28 | 2006-04-26 | Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005019860A DE102005019860B4 (de) | 2005-04-28 | 2005-04-28 | Steuerbare Halbleiterdiode, elektronisches Bauteil und Spannungszwischenkreisumrichter |
DE102005019860.0 | 2005-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006114424A2 WO2006114424A2 (de) | 2006-11-02 |
WO2006114424A3 true WO2006114424A3 (de) | 2007-03-01 |
Family
ID=37025078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/061834 WO2006114424A2 (de) | 2005-04-28 | 2006-04-26 | Steuerbare halbleiterdiode, elektronisches bauteil und spannungszwischenkreisumrichter |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1875513A2 (de) |
JP (1) | JP2008539571A (de) |
DE (1) | DE102005019860B4 (de) |
WO (1) | WO2006114424A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8415747B2 (en) * | 2010-12-28 | 2013-04-09 | Infineon Technologies Austria Ag | Semiconductor device including diode |
JP5804494B2 (ja) * | 2011-05-18 | 2015-11-04 | 国立大学法人九州工業大学 | 半導体装置及びその駆動方法 |
JP6077309B2 (ja) * | 2013-01-11 | 2017-02-08 | 株式会社豊田中央研究所 | ダイオード及びダイオードを内蔵した半導体装置 |
CN105379086B (zh) | 2013-07-10 | 2018-11-20 | 株式会社电装 | 驱动控制装置 |
JP2020013822A (ja) * | 2018-07-13 | 2020-01-23 | トヨタ自動車株式会社 | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0133642A1 (de) * | 1983-06-30 | 1985-03-06 | Kabushiki Kaisha Toshiba | Halbleiteranordnung mit einem DMOSFET |
JPS63244777A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Mos型電界効果トランジスタ |
US4811065A (en) * | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
JPH03110867A (ja) * | 1989-09-26 | 1991-05-10 | Nippon Inter Electronics Corp | 縦型電界効果トランジスタ |
GB2241111A (en) * | 1990-02-15 | 1991-08-21 | Mitsubishi Electric Corp | Transistors integrated with diodes |
US5362775A (en) * | 1991-03-27 | 1994-11-08 | Nippondenso Co., Ltd. | Epoxy resin composition and cured product thereof |
DE10148740A1 (de) * | 2001-09-27 | 2003-04-17 | Heidenhain Gmbh Dr Johannes | Verfahren zur Erdschlussüberwachung eines Stromrichterantriebs |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2809253B2 (ja) * | 1992-10-02 | 1998-10-08 | 富士電機株式会社 | 注入制御型ショットキーバリア整流素子 |
DE10308313B4 (de) * | 2003-02-26 | 2010-08-19 | Siemens Ag | Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren |
-
2005
- 2005-04-28 DE DE102005019860A patent/DE102005019860B4/de not_active Expired - Fee Related
-
2006
- 2006-04-26 WO PCT/EP2006/061834 patent/WO2006114424A2/de not_active Application Discontinuation
- 2006-04-26 JP JP2008508217A patent/JP2008539571A/ja not_active Abandoned
- 2006-04-26 EP EP06754857A patent/EP1875513A2/de not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0133642A1 (de) * | 1983-06-30 | 1985-03-06 | Kabushiki Kaisha Toshiba | Halbleiteranordnung mit einem DMOSFET |
JPS63244777A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Mos型電界効果トランジスタ |
US4811065A (en) * | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
JPH03110867A (ja) * | 1989-09-26 | 1991-05-10 | Nippon Inter Electronics Corp | 縦型電界効果トランジスタ |
GB2241111A (en) * | 1990-02-15 | 1991-08-21 | Mitsubishi Electric Corp | Transistors integrated with diodes |
US5362775A (en) * | 1991-03-27 | 1994-11-08 | Nippondenso Co., Ltd. | Epoxy resin composition and cured product thereof |
DE10148740A1 (de) * | 2001-09-27 | 2003-04-17 | Heidenhain Gmbh Dr Johannes | Verfahren zur Erdschlussüberwachung eines Stromrichterantriebs |
Also Published As
Publication number | Publication date |
---|---|
DE102005019860A1 (de) | 2006-11-02 |
DE102005019860B4 (de) | 2010-11-18 |
EP1875513A2 (de) | 2008-01-09 |
WO2006114424A2 (de) | 2006-11-02 |
JP2008539571A (ja) | 2008-11-13 |
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