WO2006107000A1 - Modulateur optique de forme d’onde de deplacement - Google Patents

Modulateur optique de forme d’onde de deplacement Download PDF

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Publication number
WO2006107000A1
WO2006107000A1 PCT/JP2006/306989 JP2006306989W WO2006107000A1 WO 2006107000 A1 WO2006107000 A1 WO 2006107000A1 JP 2006306989 W JP2006306989 W JP 2006306989W WO 2006107000 A1 WO2006107000 A1 WO 2006107000A1
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WO
WIPO (PCT)
Prior art keywords
optical
optical modulator
electrode
impedance
modulation
Prior art date
Application number
PCT/JP2006/306989
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English (en)
Japanese (ja)
Inventor
Kenji Aoki
Osamu Mitomi
Jungo Kondo
Yuichi Iwata
Tetsuya Ejiri
Original Assignee
Ngk Insulators, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Insulators, Ltd. filed Critical Ngk Insulators, Ltd.
Publication of WO2006107000A1 publication Critical patent/WO2006107000A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2255—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure controlled by a high-frequency electromagnetic component in an electric waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/127—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode travelling wave

Definitions

  • the present invention relates to a traveling waveform optical modulator.
  • ITS intelligent road communication system
  • in-vehicle radars can be installed in front of the car body to detect the front and measure the direction, distance, and relative speed of the car ahead as a collision prevention sensor.
  • ACC auto cruise systems
  • Japanese Laid-Open Patent Publication No. 2 0 2-1 6 2 4 6 5 discloses a radar device using a subcarrier light source by a moder crazer. According to this equipment, it becomes possible to divide the emitted light into multiple paths by using an optical fiber and an optical demultiplexer, which can be shared by a single oscillator, and the number of components required for the RF part can be dramatically reduced. Therefore, the cost can be reduced. Furthermore, since the installation position of the oscillator can be freely selected, the required performance of the oscillator can be relaxed and the cost can be further reduced. Disclosure of the invention
  • the present applicant superimposes a sideband on an optical carrier wave input to the optical waveguide by the modulation electrode of the traveling waveform optical modulator, and the traveling waveform optical modulator It has been disclosed that light emitted from a light source is received and converted into an electric signal, and a radio signal is emitted based on the electric signal. Also disclosed is that the traveling wave optical modulator is driven twice to generate a millimeter wave.
  • the gap between the electrodes of the modulator CP 7ACPS electrode is narrowed. It is desirable to do.
  • the finite element method was used to calculate the half-wave voltage of the optical modulator when the gap G between the electrodes was varied, the voltage amplitude at half power (half-wave voltage V TT), and the characteristic impedance.
  • Figure 1 shows the calculation results.
  • the buffer layer thickness was 1 ⁇ 5 / m and the center signal electrode width was 10 zm.
  • the central signal electrode width was set to 30 m
  • LN the substrate thickness was set to 6 mm
  • the low dielectric constant layer was set to a relative dielectric constant of 3.8
  • the thickness was 50 m.
  • Speed matching is achieved by optimizing the electrode thickness at each calculation point.
  • the modulation electrode length was 3 cm.
  • the change in characteristic impedance is not very large and is close to 50 ⁇ , so it is possible to use the optical modulator chip in a 50 ⁇ system a.
  • Half-wave voltage even if narrowed to 0 ⁇ m Is as large as 3.7 V, and the half-wave voltage is too high for double operation, and the burden on the signal source is large.
  • the “thin plate type” optical modulator has a lower half-wave voltage and a characteristic impedance close to 50 ⁇ even when the electrode gap G is about 3, compared to a “conventional” type optical modulator.
  • the characteristic impedance of the optical modulator is significantly reduced.
  • reflection due to impedance mismatch with the characteristic impedance on the input side increases, the S / N ratio deteriorates, and the driver amplifier becomes unstable. Therefore, it is difficult to actually reduce the half-wave voltage by further reducing the electrode gap G.
  • An object of the present invention is to reduce a driving voltage by reducing an electrode gap between a signal electrode and a ground electrode in a modulation electrode in a traveling waveform optical modulator for driving under a predetermined input impedance Z i in a predetermined frequency region.
  • An object of the present invention includes an optical waveguide substrate made of an electro-optic material, an optical waveguide formed on the optical waveguide substrate, and a modulation electrode that applies a voltage for modulating light propagating through the optical waveguide.
  • An input-side impedance adjustment unit is provided on the upstream side of the light modulation unit and adjusts the difference between the input impedance Z i and the characteristic impedance Z c of the light modulation unit.
  • the input impedance adjustment unit for adjusting the difference between the input impedance Z i and the characteristic impedance Z c of the optical modulation unit is provided on the upstream side of the optical modulation unit.
  • the impedance adjustment unit is provided in the traveling waveform optical modulator, the high-frequency characteristic deterioration at the circuit connection point is minimal. Also, from the viewpoint of the manufacturing process, the matching circuit can be formed simultaneously in the same process, so the cost can be kept the same as a modulator without a matching circuit.
  • Figure 1 is a graph showing the relationship between the electrode gap, characteristic impedance, and half-wave voltage of a traveling-waveform optical modulator.
  • FIG. 2 is a cross-sectional view schematically showing the traveling waveform optical modulator 2.
  • FIG. 3 is a block diagram showing an optical modulator according to an embodiment of the present invention.
  • FIG. 4 is a plan view showing a design example of the signal electrode, the ground electrode, and the optical waveguide of the optical modulator corresponding to FIG.
  • Fig. 5 is a graph showing the power required for double power generation.
  • FIG. 6 is a block diagram showing an optical modulator according to another embodiment of the present invention.
  • FIG. 7 shows a signal electrode, a ground electrode, and an optical waveguide of the optical modulator corresponding to FIG. It is a top view which shows the example of a road design.
  • FIG. 8 is a block diagram of an example of a radio oscillation device to which the present invention can be applied.
  • FIG. 9 is a schematic diagram for explaining the characteristics of the optical modulator in the apparatus of FIG.
  • FIG. 10 is a schematic diagram for explaining the characteristics when the optical modulator is used as a multiplier.
  • FIG. 11 is a schematic diagram for explaining the characteristics of another example in which the optical modulator is used as a multiplier.
  • FIG. 12 is a schematic diagram for explaining the operation for oscillating radio signals of various frequencies from the optical modulator 2.
  • FIG. 13 is a diagram schematically showing the spectral distribution of the n-th sideband.
  • Figure 14 is a graph showing the sideband conversion efficiency and suppression ratio when a second harmonic is generated.
  • FIG. 2 is a cross-sectional view showing an example of an optical modulator.
  • the optical modulator 2 includes an optical waveguide substrate 3 and a holding base 31. Both the substrate 3 and the base 31 have a flat plate shape.
  • the thickness of the substrate 3 is preferably 100 m or less, more preferably 30 m or less.
  • Predetermined electrodes 4 A, 4 B, and 4 C are formed on the main surface of the substrate 3.
  • a so-called coplanar type (Coplanar waveguide: CPW electrode) electrode arrangement is adopted, but the electrode arrangement form is not particularly limited.
  • the coplanar type a row of ground electrodes are sandwiched between a pair of ground electrodes.
  • the present invention is applied to, for example, an ACPS traveling wave optical modulator. it can.
  • a row of ground electrodes and a row of signal electrodes are provided.
  • the present invention can also be applied to a so-called independent modulation type traveling waveform optical modulator.
  • a pair of optical waveguides 5 A and 5 B are formed between adjacent electrodes, and a signal voltage is applied to each of the optical waveguides 5 A and 5 B in a substantially horizontal direction. Yes.
  • This optical waveguide constitutes a so-called Mach-ender type optical waveguide in plan view, but the planar pattern itself is well known.
  • An adhesive layer 30 having a substantially constant thickness is interposed between the lower surface of the substrate 3 and the holding base 31 to bond the substrate 3 and the holding base 31.
  • the optical waveguide may be a ridge type optical waveguide formed directly on one main surface of the substrate, and is a ridge type optical waveguide formed on one main surface of the substrate via another layer. It may also be an optical waveguide formed in the substrate by an internal diffusion method or an ion exchange method, such as a titanium diffusion optical waveguide or a proton exchange optical waveguide. Specifically, the optical waveguide may be a ridge type optical waveguide protruding from the substrate surface.
  • a ridge-type optical waveguide can be formed by laser machining or machining.
  • a ridge-type three-dimensional optical waveguide can be formed by forming a high refractive index film on a substrate and subjecting this high refractive index film to machining or laser ablation.
  • the high refractive index film can be formed by, for example, chemical vapor deposition, physical vapor deposition, metal organic chemical vapor deposition, sputtering, or liquid phase epitaxy.
  • the electrode is provided on the surface of the substrate, but may be formed directly on the surface of the substrate or may be formed on the low dielectric constant layer or the buffer layer.
  • the low dielectric constant layer known materials such as silicon oxide, magnesium fluoride, silicon nitride, and alumina can be used.
  • the term “low dielectric constant layer” as used herein refers to a layer made of a material having a dielectric constant lower than that of the material constituting the substrate body.
  • the thickness of the adhesive layer 30 is preferably 10 00 zm or less, more preferably 30 00 zm or less, and most preferably 10 0 / m or less.
  • the lower limit of the thickness of the adhesive layer 30 is not particularly limited, but may be 10 m or more from the viewpoint of reducing the effective microwave refractive index.
  • the material constituting the optical waveguide substrate 3 and the holding base 31 is a ferroelectric electro-optical material, preferably a single crystal.
  • a crystal is not particularly limited as long as it can modulate light, but lithium niobate, lithium tantalate, lithium niobate-lithium tantalate solid solution, lithium lithium niobate, KTP, GaAs and A crystal etc. can be illustrated.
  • the material of the holding substrate 31 may be glass such as quartz glass in addition to the above-described ferroelectric electro-optic material.
  • the adhesive are not particularly limited as long as the above-mentioned conditions are satisfied, but compared with materials having an electro-optic effect such as epoxy adhesives, thermosetting adhesives, ultraviolet curable adhesives, lithium niobate, etc. Ceramics C with a similar thermal expansion coefficient (trade name, manufactured by Toa Gosei Co., Ltd.) (Thermal expansion coefficient
  • an adhesive sheet can be interposed between the back surface of the substrate 3 and the holding substrate 31 for bonding.
  • a sheet made of a thermosetting, photocurable or photothickening resin adhesive is interposed between the substrate and the holding substrate to cure the sheet.
  • FIG. 3 is an equivalent circuit diagram of the signal voltage system of the apparatus incorporating the traveling waveform optical modulator according to the embodiment of the present invention.
  • a signal voltage is applied from the high-frequency power source 9 to the optical modulation unit 16 to modulate the light transmitted through the optical waveguide.
  • Z i be the characteristic impedance of the signal voltage input system 10.
  • Z i is usually set to 50 ⁇ .
  • the characteristic impedance Z c in the optical modulator 16 is adjusted to Z i. May not match.
  • the characteristic impedance Zc in the optical modulation section decreases when the electrode gap is reduced to reduce the half-wave voltage. If the optical waveguide is operated in this state, reflection due to impedance mismatch with the characteristic impedance on the input side increases, the S / N ratio deteriorates, and the driver amplifier becomes unstable. Therefore, it is difficult to reduce the half-wave voltage by further reducing the electrode gap.
  • an input-side impedance adjustment unit 11 for adjusting the difference between the input impedance Z i and the characteristic impedance Z c of the optical modulation unit is provided in the optical modulator.
  • the characteristic impedance Z 1 of the input side impedance adjustment unit 11 is approximately the geometric mean of the characteristic impedance Z i of the input system and the characteristic impedance Z c of the modulation electrode ⁇ ⁇ i Set to be Z c.
  • the characteristic impedance Z 1 of the input-side impedance adjustment unit 11 is set to the geometric mean i Z c of the characteristic impedance Z i of the input system and the characteristic impedance Z c of the optical modulation unit. Degree is acceptable. However, since the difference between Z 1 and Z i Z c is desired to be small, it is preferably 5 ⁇ or less.
  • a load 13 exists on the output side of the traveling waveform optical modulator, and the characteristic impedance of the load 13 is ZL.
  • ZL when ZL is different from Zc, reflection occurs on the output side. Therefore, it is preferable to provide a load-side impedance adjustment unit 12 in the optical modulator.
  • the characteristic impedance Z2 of the load-side impedance adjustment unit 1 2 is set to the geometric mean ⁇ c ZL of the characteristic impedance ZL of the load and the characteristic impedance Zc of the modulation electrode side. Permissible. * But ⁇ 2 and Since the difference from Z c ZL is desired to be small, it is preferably 5 ⁇ or less.
  • the frequency range to be used is preferably narrow from the viewpoint of the present invention to reduce reflection.
  • the difference between the upper limit and the lower limit of the frequency used is preferably 15 GHz or less, and more preferably 5 GHz or less.
  • a single frequency is incident on the optical modulator.
  • specific forms of the input side impedance adjustment unit and the load side impedance adjustment unit are not particularly limited.
  • the characteristic impedance is as described above in a specific frequency range, and that the line length corresponds to human / 4 ( ⁇ is the wavelength) or an integral multiple of the input frequency.
  • a specific form of such an impedance adjustment unit is an ENO 4 transformer or a substation transformer.
  • the method of providing the input side impedance adjustment unit and the load side impedance adjustment unit on the optical modulator is not particularly limited.
  • the characteristic impedance can be changed by changing the electrode gap between the ground electrode and the signal electrode. That is, when the electrode gaps G i and GL are increased, the characteristic impedance is increased, and when the electrode gaps G i and GL are decreased, the characteristic impedance is decreased.
  • the characteristic impedance can be changed by changing the design of the stub transformer.
  • FIG. 4 shows an embodiment in which the adjusting unit is configured by an / 4 transformer.
  • a pair of optical waveguides 5 A and 5 B are formed between adjacent electrodes, and a signal voltage is applied to each of the optical waveguides 5 A and 5 B in a substantially horizontal direction.
  • This optical waveguide constitutes a Mach-ender type optical waveguide in a plan view.
  • the input side The input side impedance adjustment unit 1 1 is provided, the output side is provided with the load side impedance adjustment unit 1 2, and the light modulation unit 16 is provided between each adjustment unit 1 1 and 1 2.
  • a signal electrode 4 B is provided between the ground electrodes 4 A and 4 C.
  • the line length L c of the optical modulation unit 16 is appropriately determined according to the modulation frequency of the input signal, the wavelength of light, and the like.
  • the gap G i between the ground electrodes 14 A and 14 B and the signal electrode 4 B is larger than the gap G c in the light modulation section 16. Therefore, adjust so that the characteristic impedance Z 1 of the adjustment unit 1 1 becomes ⁇ ⁇ c ⁇ i.
  • the signal electrode widths W i and W c are constant in the adjustment unit 1 1 and the light modulation unit 16.
  • the gap GL between the ground electrodes 15 A, 15 B and the signal electrode 4 B is larger than the gap G c in the light modulation section 16. Therefore, adjust so that the characteristic impedance of the adjusting unit 1 2 —dance Z 2 is ⁇ C ⁇ L.
  • the signal electrode widths W c and W L are constant in the adjustment unit 1 2 and the light modulation unit 16.
  • the thickness of the optical waveguide substrate is preferably 100 / m or less, more preferably 50 mm or less, and most preferably 30 m or less. The reason for this will be described.
  • the power P 1 is equal to the power P 2 supplied to the input impedance adjustment unit. For this reason, for example, the power P supplied by the signal source during the 2 ⁇ operation is V 2
  • VTT is a half-wave voltage
  • Zc is the characteristic impedance of the light modulator.
  • the characteristic impedance Z L of the load 14 provided on the output side of the optical modulator is assumed to be the same as the characteristic impedance Z c in the optical modulator 16. This eliminates the need for a load-side impedance adjustment unit that adjusts the impedance difference from the load 14 on the downstream side of the optical modulator.
  • an adjustment unit 17 On the upstream side of the optical modulation unit 16, an adjustment unit 17 having a difference (Z i ⁇ Z c) between the impedance Z i of the input system 10 and the characteristic impedance Z c of the optical modulation unit 16. Is provided.
  • the signal electrode width Wc in the light modulator is preferably 200 m or less, and more preferably 100 m or less, for high-speed modulation. Further, Wc is higher from the viewpoint of the electrode propagation loss reduction due to the Table Kawako 1 fruit is preferred.
  • the signal electrode widths Wi and WL in the impedance adjusting unit are preferably 200 m or less, and more preferably 100 zm or less. Wi and WL are preferably 3 zm or more from the viewpoint of reducing electrode propagation loss due to the skin effect. Furthermore, it is preferable that there are few steps between Wi, WL and Wc.
  • the electrode gap Gc in the light modulator is from the viewpoint of reducing drive voltage Is preferably 50 m or less, more preferably, and most preferably 15 zm or less.
  • the optical insertion loss increases. From the viewpoint of reducing this biting loss or preventing short-circuiting between the signal electrode and the ground electrode, Gc is preferred.
  • the electrode gear groups G i and GL in the impedance adjustment unit are designed to be appropriate values because they provide the characteristic impedance determined by the input-side impedance, the load impedance, and the impedance of the optical modulation unit. it can.
  • the traveling waveform optical modulator of the present invention can be suitably applied to high frequency modulation of light.
  • the traveling waveform optical modulator is caused to oscillate wirelessly and further to perform a double operation.
  • the present invention is most suitable when applied to such applications.
  • this embodiment will be described. That is, in this embodiment, the sideband wave is superimposed on the optical carrier wave input to the optical waveguide by the modulation electrode. It is also possible to receive light emitted from the traveling waveform light modulator, convert it into an electrical signal, and radiate a radio signal based on the electrical signal.
  • the radio oscillation device shown in FIG. 8 includes a light source 1, an optical modulator 2, a modulation power source 6, a light receiver 7, and a radio signal radiating means 8.
  • the optical modulator 2 includes an optical waveguide substrate 3, an optical waveguide 5 having a predetermined pattern formed on the substrate 3, and an electrode 4 that modulates light propagating through the optical waveguide 5.
  • Frequency from light source 1 The fo carrier wave oscillates as shown by arrow A and enters optical waveguide 5.
  • the drive voltage of the modulator is VT.
  • a modulation signal having a frequency fm and a driving voltage VTT / 2 is input to the modulator electrode.
  • VTT / 2 the drive voltage of the modulator
  • Frequency: fm modulated light (sideband) is generated.
  • the sidebands R and Q are generated at positions shifted by the frequency fm with respect to the base frequency of the carrier wave P: fo.
  • the outgoing light B emitted from the optical modulator 2 has a form in which the carrier wave P having the frequency f 0 is intensity-modulated at the frequency Hi.
  • the filter that should be installed after the receiver which is required in Japanese Patent No. 2 0 0 2— 1 6 2 4 6 5, should be changed to a low-cost filter that does not have strict passband characteristics. If you can only generate sidebands, you can remove the fill. In addition, it is possible to efficiently generate the sidebands required for radio signal generation, which can generate a high-power radio signal compared to a subcarrier light source, and a high-performance optical amplifier or power even when branched into multiple Does not require an amplifier.
  • the sideband having a frequency of fm is superimposed on the emitted light, and a radio signal having a frequency of fm is oscillated.
  • a modulation signal having a frequency of fm to an optical modulator, the sideband having a frequency of fm is superimposed on the emitted light, and a radio signal having a frequency of fm is oscillated.
  • FIG. 9 corresponds to this embodiment.
  • the optical modulator can be used as a multiplier.
  • the modulation signal of frequency fm is input to the oscillation optical modulator.
  • the amplitude of the modulation signal is set to n times the drive voltage VTT of the optical modulator (n is an integer of 2 or more), and the operating point is set to 0 or ⁇ / 2 of the optical modulator when n is an even number.
  • ⁇ is odd
  • the sideband is superimposed at the position shifted by the frequency nxfm, and the radio signal with the frequency n X fm is oscillated. In this way, by increasing the drive voltage of the oscillation optical modulator, the number of multiples can be increased, and a low-frequency oscillator can generate a high-frequency radio signal.
  • oscillation occurs when the bias voltage is operated at the maximum peak position of the optical output (Vb: ON state) or the bias voltage is operated at the position where the optical output is zero (Vb: OFF state).
  • Input to the optical modulator as a modulation signal of frequency fm.
  • the amplitude of the modulation signal is set to twice the drive voltage VTT of the optical modulator. Then, sidebands with a frequency of 2 f m are superimposed on the emitted light.
  • an electric signal with a frequency of 2 fm can be obtained, and this is input to a radiation means that radiates a radio signal, for example, a transmitting antenna. By doing so, a radio signal with a frequency of 2 fm can be generated.
  • a modulation signal with a frequency of fm is input to the optical modulator for oscillation, and a sideband is superimposed at a position shifted by the frequency nxfm (n is a desired integer of 1 or more) with respect to the optical carrier, and a radio with a frequency of 2 x A signal can be selected and oscillated.
  • radio oscillation is performed by the frequency multiplication method.
  • the optical electric field intensity is expressed by the following formula, and sidebands are generated.
  • each symbol is as follows.
  • Figure 13 schematically shows the spectral distribution of each sideband.
  • the suppression ratio of the light intensity of the sideband wave corresponding to an integer other than the desired integer to the light intensity of the sideband wave corresponding to the desired integer is preferably 1 O dB or more.
  • the upper limit of n is not particularly theoretically, but practically, 10 or less is easy to use.
  • the undesired sideband can be cut by cutting the undesired sideband with the optical filter.
  • the suppression ratio of the light intensity of the unwanted sideband with respect to the light intensity can be set to 10 dB or more.
  • Such types of optical fills include fiber bragg glaging (FBG) fills, There are dielectric multilayer film, arrayed waveguide grating (AWG) optical film, and long film.
  • Fig. 14 shows the optical power intensity ratio (JgZJi) 2 (suppression ratio) of the primary sideband (J i) and the tertiary sideband to the primary sideband when Vb is OFF.
  • the light intensity of the primary sideband becomes maximum when the input voltage is (2.3 VTT) Vp-p, and the suppression ratio of the tertiary sideband is 15 dB or more. Therefore, in this case, an optical beat signal (2 xf m.) Of the first-order double sideband is obtained as the optical output. In the same way, it is possible to generate 4, 6, and 8th harmonics.
  • Ti diffusion waveguides 5 A and 5 B and CPW electrodes 4 A, 4 B, and 4 C were formed on an X-cut lithium niobate substrate 3.
  • a polishing dummy substrate is attached to the polishing surface plate, and the modulator substrate 3 is attached to the polishing plate with a thermoplastic resin with the electrode surface facing down.
  • the modulator substrate 3 is thinned to a thickness of 6 zm by horizontal polishing and polishing.
  • a lithium X-cut niobate substrate as a flat reinforcing substrate 31 was bonded and fixed to the modulator substrate, and the connection portion of the optical fiber was polished at the end, and cut by dicing.
  • the adhesive fixing resin an adhesive having a relative dielectric constant of 4 was used, and the thickness of the adhesive layer 30 was 5 O ⁇ m.
  • the modulator chip is optically aligned with the optical fiber, and is bonded and fixed with UV curable resin.
  • a radar device as shown in Fig. 8 was produced. And the frequency band used is 7 6 GHz, and the light source is 1.5 5 5111 0 Using an FB laser, it was driven twice as shown in Fig. 14 to generate a second harmonic.
  • the operating point of the optical modulator 2 is the position where the output light is maximized, and it was operated with an oscillator with an oscillation frequency of .38 GHz and an input voltage of ⁇ 3.7 V.
  • Characteristic impedance Zc of optical modulator 16 28 ⁇
  • Input impedance impedance adjustment unit 1 characteristic impedance Z 1: 3 7 ⁇ Output side load 1 3 characteristic impedance dance Z L: 50 0 ⁇
  • the characteristic impedance of the load-side impedance adjustment section 1 2 Z 2 3 7 ⁇

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

La présente invention concerne un modulateur optique de forme d’onde de déplacement pour entraîner une impédance d’entrée prédéterminée Zi dans une région de fréquence prédéterminée. Le modulateur optique de forme d’onde de déplacement comprend un substrat de guide d’onde optique, des guides d’onde optiques (5A, 5B), et des électrodes de modulation (4A, 4B, 4C). Une unité d’ajustement d’impédance sur le côté d’entrée (11) est agencée du côté amont du modulateur optique (16). L’unité d’ajustement d’impédance sur le côté d’entrée (11) comporte une impédance pour ajuster la différence entre l’impédance d’entrée Zi et l’impédance caractéristique Zc de l’unité de modulation optique.
PCT/JP2006/306989 2005-03-30 2006-03-27 Modulateur optique de forme d’onde de deplacement WO2006107000A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007145144A1 (fr) * 2006-06-14 2007-12-21 Anritsu Corporation Modulateur optique
JP2009145695A (ja) * 2007-12-14 2009-07-02 Anritsu Corp 光変調器
JP2013156473A (ja) * 2012-01-31 2013-08-15 Sumitomo Osaka Cement Co Ltd 光変調器
WO2016159202A1 (fr) * 2015-03-31 2016-10-06 住友大阪セメント株式会社 Élément de guide d'ondes optiques
EP3316394A4 (fr) * 2015-06-24 2019-02-13 Nippon Telegraph and Telephone Corporation Ligne haute fréquence
JP2019174698A (ja) * 2018-03-29 2019-10-10 住友大阪セメント株式会社 光変調器

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WO2007145144A1 (fr) * 2006-06-14 2007-12-21 Anritsu Corporation Modulateur optique
JP2009064048A (ja) * 2006-06-14 2009-03-26 Anritsu Corp 光変調器
JP2009145695A (ja) * 2007-12-14 2009-07-02 Anritsu Corp 光変調器
JP2013156473A (ja) * 2012-01-31 2013-08-15 Sumitomo Osaka Cement Co Ltd 光変調器
US9250455B2 (en) 2012-01-31 2016-02-02 Sumitomo Osaka Cement Co., Ltd. Optical modulator
JP2016194574A (ja) * 2015-03-31 2016-11-17 住友大阪セメント株式会社 光導波路素子
WO2016159202A1 (fr) * 2015-03-31 2016-10-06 住友大阪セメント株式会社 Élément de guide d'ondes optiques
CN106662766A (zh) * 2015-03-31 2017-05-10 住友大阪水泥股份有限公司 光波导元件
US10185165B2 (en) 2015-03-31 2019-01-22 Sumitomo Osaka Cement Co., Ltd. Optical waveguide device
EP3316394A4 (fr) * 2015-06-24 2019-02-13 Nippon Telegraph and Telephone Corporation Ligne haute fréquence
US10522892B2 (en) 2015-06-24 2019-12-31 Nippon Telegraph And Telephone Corporation High-frequency line
JP2019174698A (ja) * 2018-03-29 2019-10-10 住友大阪セメント株式会社 光変調器
JP7087555B2 (ja) 2018-03-29 2022-06-21 住友大阪セメント株式会社 光変調器

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