WO2006098565A1 - Technique de depot d'un film mince par depot de couches atomiques (ald) - Google Patents

Technique de depot d'un film mince par depot de couches atomiques (ald) Download PDF

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Publication number
WO2006098565A1
WO2006098565A1 PCT/KR2006/000829 KR2006000829W WO2006098565A1 WO 2006098565 A1 WO2006098565 A1 WO 2006098565A1 KR 2006000829 W KR2006000829 W KR 2006000829W WO 2006098565 A1 WO2006098565 A1 WO 2006098565A1
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WO
WIPO (PCT)
Prior art keywords
purge
chamber
gas
reaction gas
thin film
Prior art date
Application number
PCT/KR2006/000829
Other languages
English (en)
Inventor
Hong-Joo Lim
Sang-Kwon Park
Sahng-Kyu Lee
Tae-Wook Seo
Ho-Seung Chang
Original Assignee
Ips Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050021876A external-priority patent/KR100640552B1/ko
Application filed by Ips Ltd. filed Critical Ips Ltd.
Publication of WO2006098565A1 publication Critical patent/WO2006098565A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Definitions

  • the present invention relates to a method of depositing a thin film using an atomic layer deposition (ALD) process, and more particularly, to a method of depositing a thin film using an ALD process, which can achieve good or bad step coverage on a substrate and also enhance a purge efficiency.
  • ALD atomic layer deposition
  • FIG. 1 is a graph illustrating a process sequence of a conventional ALD thin film deposition method.
  • a process cycle is performed several times to deposit a thin film on a substrate.
  • the process cycle includes: a first feeding process Sl of feeding a first reaction gas into a chamber in which the substrate is installed; a first purge process S2 of purging the first reaction gas from the chamber; a second feeding process S3 of feeding a second reaction gas into the chamber; and a second purge process S4 of purging the second reaction gas not reacting with the first reaction gas.
  • a first atomic layer or a first molecular layer is deposited on the substrate.
  • the surface area of a substrate on which a pattern has been formed is several hundred % larger than that of a substrate on which no pattern has been formed. Moreover, with the progress of high integration, the surface area of the substrate is further increased due to an increase in the aspect ratio of a contact. However, when the surface area of the substrate increases, the purge time must be increased in order to enhance the purge efficiency of the reaction gas. This increase in the purge time leads to a decrease in productivity.
  • the present invention provides an ALD thin film deposition method that can easily achieve good or bad step coverage on a substrate.
  • the present invention also provides an ALD thin film deposition method that can efficiently purge a reaction gas from a chamber and a gas line within a short time and can enhance the uniformity of the resulting thin film.
  • a method of depositing a thin film on a substrate using an ALD process and a thin film deposition device including a chamber for depositing the thin film on the substrate, a gas box for supplying a reaction gas and/or a purge gas to the chamber, and an exhaust pump for exhausting the reaction gas and/or the purge gas from the chamber and/or the gas box to the outside, the method including: performing cycle a process a number of times to deposit the thin film on the substrate, the repeated process cycle including: a first feeding process of feeding a first reaction gas into the chamber; a first purge process of purging the first reaction gas from the chamber; a second feeding process of feeding a second reaction gas into the chamber; and a second purge process of purging the second reaction gas not reacting with the first reaction gas; and performing, between the repeated process cycles, a pre-pressure change process of decreasing or increasing an internal pressure of the chamber without supplying the first reaction gas and the second reaction gas.
  • the pre-pressure change process may be performed to decrease an internal pressure of the chamber below a process pressure at which the first and second feeding and purging processes are performed.
  • the pre-pressure change process may be performed via a pumping operation of the exhaust pump after closing valves connected between the chamber and the gas box.
  • the pre-pressure change process may be performed to decrease the internal pressure of the chamber by greater than 20% of a process pressure of the first feeding process.
  • the pre-pressure change process may be performed to increase an internal pressure of the chamber above a process pressure at which the first and second feeding and purging processes are performed.
  • the pre-pressure change process may be performed by supplying a separate inert gas to the chamber.
  • the separate inert gas may be supplied through a separate gas line additionally connected between the chamber and the gas box, or through first and second gas lines connected between the chamber and the gas box.
  • the pre-pressure change process may be performed to increase the internal pressure of the chamber by greater than 20% of a process pressure of the first feeding process.
  • the gas box may include two or more reaction gas supply units respectively supplying two or more kinds of reaction gas to the chamber; a main purge gas supply unit supplying a main purge gas for purging the chamber; a connection line connecting the reaction gas supply unit to the chamber; a bypass line connecting the exhaust pump to the reaction gas supply units and/or the main purge gas supply unit; and a plurality of valves installed in the reaction gas supply units, the main purge gas supply unit, the connection line and the bypass line.
  • the reaction gas supply unit may include: a source container filled with a predetermined amount of liquid reactant to be gasified by a supplied carrier gas; and a plurality of valves selectively allowing the carrier gas to flow to the source container, the connection line or the bypass line.
  • the first purge process and/or the second purge process may include at least two processes of a first sub-purge process performed using the carrier gas, a second sub-purge process performed using the main purge gas, and a third sub-purge process performed via a pumping operation of the exhaust pump after closing all of the valves installed in the connection lines connected to the chamber.
  • the first purge process and/or the second purge process may include the first sub- purge process and the second sub-purge process.
  • the first purge process and/or the second purge process may include the second sub-purge process and the third sub-purge process.
  • the first purge process and/or the second purge process may include the first sub- purge process, the second sub-purge process, and the third sub-purge process.
  • FIG. 1 is a graph illustrating a process sequence of a conventional ALD thin film deposition method
  • FIG. 2 is a schematic diagram illustrating a structure of a thin film deposition device used for performing an ALD thin film deposition method according to an embodiment of the present invention
  • FIG. 3 is a graph illustrating a process sequence of an ALD thin film deposition method for achieving good step coverage according to an embodiment of the present invention
  • FIG. 4 is a graph illustrating a process sequence of an ALD thin film deposition method for achieving bad step coverage according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram illustrating a structure of a thin film deposition device performing the process sequence of the ALD thin film deposition method illustrated in FIG. 4;
  • FIG. 6 is a schematic diagram illustrating a structure of a thin film deposition device used for performing an ALD thin film deposition method according to another embodiment of the present invention.
  • FIG. 7 is a graph illustrating a process sequence of an ALD thin film deposition method using the thin film deposition device of FIG. 6, wherein a second purge process includes first and second sub-purge processes;
  • FIG. 8 is a graph illustrating a process sequence of an ALD thin film deposition method using the thin film deposition device of FIG. 6, wherein a second purge process includes first, second and third sub-purge processes.
  • FIG. 2 is a schematic diagram illustrating a structure of a thin film deposition device used for performing an ALD thin film deposition method according to an embodiment of the present invention.
  • FIG. 3 is a graph illustrating a process sequence of an ALD thin film deposition method for achieving good step coverage according to an embodiment of the present invention.
  • FIG. 4 is a graph illustrating a process sequence of an ALD thin film deposition method for achieving bad step coverage according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram illustrating a structure of a thin film deposition device performing the process sequence of the ALD thin film deposition method illustrated in FIG. 4.
  • the thin film deposition device used for performing the ALD thin film deposition method includes: a chamber 100 for depositing a thin film on a substrate W; a gas box 200 for supplying a reaction gas and/or a purge gas to the chamber 100; and an exhaust pump 300 for exhausting the chamber 100 and/or the gas box 200 of the reaction gas and/or the purge gas.
  • the gasbox 200 and the chamber 100 are connected to each other by a first gas line in which a first valve Vl is installed and a second gas line in which a second valve V2 is installed.
  • the first gas line is connected to a first bypass line in which a third valve V3 is installed, and the second gas line is connected to a second bypass line in which a fourth valve V4 is installed.
  • a fifth valve V5 is installed in a gas line connected between the chamber 100 and the exhaust pump 300.
  • a purge valve may be further installed.
  • the ALD thin film deposition method includes: performing a process cycle a number of times, the process cycle including a first feeding process SlO of feeding a first reaction gas into the chamber 100, a first purge process S20 of purging the first reaction gas from the chamber 100, a second feeding process S30 of feeding a second reaction gas into the chamber 100, and a second purge process S40 of purging the second reaction gas not reacting with the first reaction gas; and performing, between the repeated process cycles, a pre-pressure change process S50 or S50' (see FIGS. 3 and 4) of decreasing or increasing the internal pressure of the chamber 100 without supply of the first and second reaction gas.
  • a pre-pressure change process S50 or S50' see FIGS. 3 and 4
  • the pre-pressure change process S50 or S50' is used to decrease or increase the internal pressure of the chamber 100, to achieve good or bad step coverage on the substrate W.
  • a process cycle of the pre-pressure change process S50 a the first feeding process SlO a the first purge process S20 a the second feeding process S30 a the second purge process S40 is repeated several times.
  • a first process cycle 1 is performed, a first atomic layer or a first molecular layer is deposited on the substrate W.
  • the chamber 100 may be purged using an inert gas such as Ar or N 2.
  • the pre-pressure change process S50 is performed to decrease the internal pressure of the chamber 100 below a process pressure at which the feeding and purging processes are performed.
  • the pre-pressure change process S50 is performed by closing the first and second valves Vl and V2 installed respectively in the first gas line and the second gas line and then performing a pumping operation of the exhaust pump 300.
  • the pre-pressure change process S50 may be performed to decrease the internal pressure of the chamber 100 by more than 20% of a predetermined process pressure of the first feeding process SlO.
  • the reason for this is that the internal pressure of a contact hole is insufficiently decreased when the pre-pressure change process S50 is performed to decrease the internal pressure of the chamber 100 by less than 20% of the predetermined process pressure.
  • the pre-pressure change process S50 is further performed to decrease the internal pressure of the chamber 100, thereby decreasing the pressure at the surface of the substrate W (specifically, the internal pressure of the contact hole). Due to this pressure decrease, the reaction gas is sufficiently supplied to the inside of the contact hole during the next process cycle, thereby achieving good step coverage. That is, the decreased pressure at the surface of the substrate W increases the diffusion distance and speed of the reaction gas, and thus the reaction gas can be supplied to the deep inside of the contact hole, thereby achieving good step coverage.
  • a process cycle of the pre-pressure change process S50' a the first feeding process SlO a the first purge process S20 a the second feeding process S30 a the second purge process S40 is performed several times.
  • a first process cycle 1 is performed, a first atomic layer or a first molecular layer is deposited on the substrate W.
  • the chamber 100 may be purged using an inert gas such as Ar or N 2.
  • the pre-pressure change process S50' is performed to increase the internal pressure of the chamber 100 above a process pressure at which the feeding and purging processes are performed.
  • an inert gas for the pre-pressure change process S50' may be supplied through the first and second gas lines, or through a separate gas line 400 that is additionally connected between the gasbox 200 and the chamber 100.
  • the pre-pressure change process S50' can be performed more precisely.
  • the pre-pressure change process S50' may be performed to increase the internal pressure of the chamber 100 by more than 20% of a predetermined process pressure of the first feeding process SlO.
  • the reason for this is that the internal pressure of a contact hole is insufficiently increased when the pre-pressure change process S50' is performed to increase the internal pressure of the chamber 100 by less than 20% of the predetermined process pressure.
  • the pre-pressure change process S50' is further performed to increase the internal pressure of the chamber 100, thereby increasing the pressure at the surface of the substrate W (specifically, the internal pressure of the contact hole). Due to this pressure increase, the reaction gas fed is not supplied to the inside of the contact hole during the next process cycle, thereby achieving bad step coverage. That is, the increased pressure at the surface of the substrate W decreases the diffusion distance and speed of the reaction gas, and thus the reaction gas reacts mainly at the entrance region of the contact hole, thereby achieving bad step coverage.
  • FIG. 6 is a schematic block diagram of a thin film deposition device used for performing an ALD thin film deposition method according to another embodiment of the present invention.
  • FIG. 7 is a graph illustrating a process sequence of an ALD thin film deposition method using the thin film deposition device of FIG. 6, wherein a second purge process includes first and second sub-purge processes unlike the embodiment of FIG. 2.
  • FIG. 8 is a graph illustrating a process sequence of an ALD thin film deposition method using the thin film deposition device of FIG. 6, wherein a second purge process includes first, second and third sub-purge processes unlike the embodiment of FIG. 2.
  • the thin film deposition device used for performing the ALD thin film deposition method includes: a chamber 100 for depositing a thin film on a substrate W; a gas box 200 for supplying a reaction gas and/or a purge gas to the chamber 100; and an exhaust pump 300 for exhausting the chamber 100 and/or the gas box 200 of the reaction gas and/or the purge gas.
  • the exhaust pump 300 operates continuously during the ALD thin film deposition process.
  • the gas box 200 includes: two or more reaction gas supply units respectively supplying two or more kinds of reaction gases to the chamber 100; a main purge gas supply unit supplying a main purge gas for purging the chamber 100; connection lines connecting the reaction gas supply units to the chamber 100; a bypass line connecting the exhaust pump 300 to the reaction gas supply units and/or the main purge gas supply unit; and a plurality of valves installed in the reaction gas supply units, the main purge gas supply unit, the connection line and the bypass line.
  • Each of the reaction gas supply units includes: a source container filled with a predetermined amount of liquid reactant to be gasified by a supplied carrier gas; and a plurality of valves selectively allowing the carrier gas to flow to the source container, the connection line or the bypass line.
  • the gas box 200 includes: first and second reaction gas supply units 210 and 230 respectively supplying first and second kinds of reaction gases (i.e., first and second reaction gases) to the chamber 100; first and second main purge gas supply units 250 and 260 supplying a main purge gas for purging the chamber 100; first and second connection lines 220 and 240 connecting the chamber 100 to the first reaction gas supply unit 210 and the second reaction gas supply unit 230, respectively; first and second bypass lines 225 and 245 connecting the exhaust pump 300 to the first and second reaction gas supply units 210 and 230 and the first and second main purge gas supply units 250 and 260, respectively.
  • first, second and third reaction gas supply units, first, second and third main purge gas supply units, first, second and third connection lines, and first, second and third bypass lines are used when the gas box 200 is configured to supply three kinds of gases.
  • the second reaction gas supply unit 230 includes a source container 231 filled with liquid reactant, while the first reaction gas supply unit 210 uses gaseous ozone.
  • the first reaction gas supply unit 210 includes on/off valves 212a and 212b that allow the first reaction gas (e.g., ozone) to flow to the first connection line 220 or the first bypass line 225.
  • first reaction gas e.g., ozone
  • the first main purge gas supply unit 250 includes on/off valves 252a and 252b that allow the main purge gas to flow to the first connection line 220 or the first bypass line 225.
  • the main purge gas may be non-reactant gas (e.g., Ar, N , and He), and its flow may be controlled by a mass flow controller (MFC).
  • MFC mass flow controller
  • the second reaction gas supply unit 230 includes the source container 231 and on/ off valves 232a, 232b, 232c, 232d and 232e.
  • the liquid reactant filling the source container 231 is gasified into the second reaction gas by an inert gas flowing in through the on/off valve 232a.
  • This inert gas may be Ar and is hereinafter referred to as carrier gas.
  • the valves 232a, 232b, 232c, 232d and 232e are controlled to allow the second reaction gas to flow through the second connection line 240 or the second bypass line 245.
  • the second main purge gas supply unit 260 includes on/off valves 262a and 262b that allow the main purge gas to flow to the second connection line 240 or the second bypass line 245.
  • the main purge gas may be a non-reactant gas such as Ar, N , and He, and its flow may be controlled by an MFC.
  • valves 232a, 232b, 232c, 232d and 232e are controlled by a controller (not illustrated).
  • the ALD thin film deposition method includes: performing a process cycle a number of times, the process cycle including a first feeding process SlO of feeding the first reaction gas into the chamber 100, a first purge process S20 of purging the first reaction gas from the chamber 100, a second feeding process S30 of feeding the second reaction gas into the chamber 100, and a second purge process S40 of purging the second reaction gas not reacting with the first reaction gas; and performing, between the repeated process cycles, a pre -pressure change process S50 or S50' (see FIGS. 3 and 4) of decreasing or increasing the internal pressure of the chamber 100 without supply of the first and second reaction gas.
  • the pre-pressure change processes S50 and S50' are identical to those of the embodiment of FIGS. 2 through 5, and descriptions thereof will be omitted for conciseness.
  • the 210 is opened to feed the first reaction gas (e.g., ozone) through the first connection line 220 to the chamber 100.
  • the first reaction gas e.g., ozone
  • the first reaction gas is adhered onto the substrate W.
  • the valve 252a of the first main purge gas supply unit 250 is opened to supply the main purge gas through the first connection line 220 into the chamber 100, thereby purging the first reaction gas in the chamber 100 not adhered onto the substrate W.
  • the first reaction gas purged is exhausted outside through the exhaust pump 300.
  • the valves 232a, 232b and 232e of the second reaction gas supply unit 230 are opened. Then, a carrier gas, e.g., Bubble Ar, flows in and bubbles the reaction gas of the source container 231 to generate the second reaction gas.
  • This second reaction gas is fed to the chamber 100 through the valves 232b, 232e and the second connection line 240. In the chamber 100, the second reaction gas reacts with the first reaction gas adhered onto the substrate W, thereby depositing the first atomic layer or the first molecular layer on the substrate W.
  • the second purge process S40 includes at least two processes of a first sub-purge process S40a, a second sub-purge process S40b, and a third sub-purge process S40c.
  • the first sub-purge process S40a is performed using the carrier gas, Bubble Ar.
  • the second sub-purge process S40b is performed using the main purge gas.
  • the third sub- purge process S40c is performed via a pumping operation of the exhaust pump 300 after closing all of the valves installed in the connection lines connected to the chamber 100.
  • the second purge process S40 may include the first sub-purge operation S40a and the second sub-purge operation S40b.
  • the second purge process S40 may include the second sub-purge operation S40b and the third sub-purge operation S40c.
  • the second purge process S40 may include the first sub-purge operation S40a, the second sub-purge operation S40b, and the third sub-purge operation S40c.
  • valve 232a of the second reaction gas supply unit 230 is closed and the valves 232c and 232e are opened to supply the carrier gas through the second connection line 240 to the chamber 100, thereby purging the second reaction gas remaining in the second connection line 240.
  • valve 262a of the second main purge gas supply unit 260 is opened to supply the main purge gas through the second connection line 240 to the chamber 100, thereby purging the chamber 100 of reaction by-products and/or the second reaction gas not reacting with the first reaction gas.
  • valves 212a, 252a, 232e and 262a installed in the connection lines 220 and 240 are all closed and then a purge operation is performed via a pumping operation of the exhaust pump 300.
  • the first reaction gas supply unit 210 does not include a source container because it uses ozone.
  • the first purge process S20 may include at least one of the first, second and third sub-purge processes like the second purge process S40.
  • the ALD thin film deposition method may include: performing a process cycle a number of times, the process cycle including a first feeding process of feeding the first reaction gas into the chamber 100, a first purge process of purging the first reaction gas from the chamber 100, a second feeding process of feeding the second reaction gas into the chamber 100, a second purge process of purging the second reaction gas from the chamber 100, a third feeding process of feeding the third reaction gas into the chamber 100, and a third purge process of purging the chamber 100 of byproducts and/or the third reaction gas not reacting with the first and second reaction gases; and performing, between the repeated process cycles, a pre-pressure change process S50 or S50' of decreasing or increasing the internal pressure of the chamber 100 without supply of the first, second and third reaction gases.
  • the first purge process and/or the second purge process and/or the third purge process may include at least two processes of a first sub- purge process S40a performed using the carrier gas, a second sub-purge process S40b performed using the main purge gas, and a third sub-purge process S40c performed via a pumping operation of the exhaust pump 300 after closing all of the valves installed in the connection lines connected to the chamber 100.
  • the reaction gas can be completely purged from the connection line or the chamber 100 within a short time, thereby maximizing the surface reaction on the substrate.
  • the reaction gas and by-products remaining on the substrate are efficiently purged by the several sub-purge processes of the purge process, and thus good thin film characteristics can be obtained.
  • the purge process is completed within a shorter time and simultaneously the purge efficiency is enhanced, thereby increasing the productivity.
  • the pre-pressure change process S50 or S50' of decreasing or increasing the internal pressure of the chamber 100 is additionally performed after each process cycle comprising the first feeding process a the first purge process a the second feeding process a the second purge process. Accordingly, the internal pressure of the contact hole on the substrate can be reduced or increased.
  • the reaction gas supplied during the next process cycle flows into the contact hole and provides sufficient reaction, thereby achieving good step coverage.
  • the reaction gas supplied during the next process cycle cannot flow into the contact hole and reacts only at the entrance portion of the contact hole, thereby achieving bad step coverage.
  • the purge processes includes at least two processes of the first sub-purge process performed using the carrier gas, the second sub-purge process performed using the main purge gas, and the third sub-purge process performed via the pumping operation of the exhaust pump after closing all of the valves connected to the chamber. Accordingly, the reaction gas in the connection line and the chamber can be completely purged within a short time, and the remaining gas in the contact hole can be completely purged. Consequently, it is possible to achieve good thin film characteristics.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

technique de dépôt d'un film mince sur un substrat par un procédé de dépôt de couches atomiques (ALD). A cette fin, on utilise un dispositif pour dépôt de film mince sur substrat, comprenant une chambre servant à déposer le film mince sur le substrat, une boîte à gaz fournissant un gaz de réaction et/ou un gaz de purge à la chambre, et une pompe d'échappement assurant l'évacuation à l'extérieur du gaz de réaction et/ou du gaz de purge hors de la chambre et/ou de la boîte à gaz. Le cycle complet consiste à alimenter la chambre avec un premier gaz de réaction, puis à purger ce premier gaz de réaction, et à alimenter la chambre avec un second gaz de réaction, puis à purger ce second gaz de réaction sans le faire réagir avec le premier gaz de réaction. En l'absence d'une alimentation en premier et en second gaz de réaction, on applique un processus de pré-pression entre les cycles pour ajuster la pression intérieure de la chambre à la hausse ou à la baisse
PCT/KR2006/000829 2005-03-16 2006-03-09 Technique de depot d'un film mince par depot de couches atomiques (ald) WO2006098565A1 (fr)

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Application Number Priority Date Filing Date Title
KR1020050021876A KR100640552B1 (ko) 2005-03-16 2005-03-16 Ａｌｄ 박막증착방법
KR10-2005-0021876 2005-03-16
KR10-2005-0023650 2005-03-22
KR20050023650 2005-03-22

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Cited By (1)

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WO2024076576A1 (fr) * 2022-10-06 2024-04-11 Lam Research Corporation Amélioration de l'utilisation de la chimie par augmentation de la pression pendant le traitement d'un substrat

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