WO2006093386A1 - Method of bonding aluminum electrodes of two semiconductor substrates - Google Patents

Method of bonding aluminum electrodes of two semiconductor substrates Download PDF

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Publication number
WO2006093386A1
WO2006093386A1 PCT/KR2006/000712 KR2006000712W WO2006093386A1 WO 2006093386 A1 WO2006093386 A1 WO 2006093386A1 KR 2006000712 W KR2006000712 W KR 2006000712W WO 2006093386 A1 WO2006093386 A1 WO 2006093386A1
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WIPO (PCT)
Prior art keywords
aluminum
semiconductor substrates
electrodes
bonding
alloy
Prior art date
Application number
PCT/KR2006/000712
Other languages
French (fr)
Inventor
Byoung Su Lee
Original Assignee
Siliconfile Technologies Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconfile Technologies Inc. filed Critical Siliconfile Technologies Inc.
Priority to JP2007556090A priority Critical patent/JP2008530816A/en
Priority to EP06716162A priority patent/EP1854135A4/en
Priority to US11/817,761 priority patent/US7732300B2/en
Publication of WO2006093386A1 publication Critical patent/WO2006093386A1/en

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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
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    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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Definitions

  • the present invention relates to a semiconductor manufacturing process, and more particularly, to a method of bonding metal wires of two overlapped substrates in the process of manufacturing a semiconductor.
  • Electrodes in general, are bonded in a semiconductor manufacturing process by using alloys having low melting points, such as lead (Pb), tin (Sn), and bismuth (Bi).
  • the alloys are harmful to human body, and may contaminate semiconductor manufacturing equipments due to low vapor pressure.
  • Aluminum (Al) is commonly used for a metal electrode in most semiconductor manufacturing processes.
  • the aluminum (Al) electrode may be heated near to its melting point. Due to the heating of the aluminum (Al) electrode, remaining regions of the aluminum (Al) electrode, which are not bonding areas, also melt, which in turn has an adverse effect on existing wires or circuits of the substrates. Disclosure of Invention
  • an object of the present invention is to provide a method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates, without contaminating semiconductor manufacturing equipments.
  • a ccording to an aspect of the present invention there is provided a method for bonding aluminum (Al) electrodes of two semiconductor substrates, comprising: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates.
  • the metal alloy may be an Al Cu alloy. Description of Drawings
  • FIGS. 1 to 3 show a process of bonding aluminum (Al) electrodes formed on two semiconductor substrates according to an embodiment of the present invention.
  • FIGS. 1 to 3 show a process of bonding aluminum (Al) electrodes formed on two semiconductor substrates according to an embodiment of the present invention.
  • FIG. 1 shows aluminum (Al) electrodes formed on two semiconductor substrates.
  • Aluminum (Al) electrodes 13 and 23 to be bonded are formed on semiconductor substrates 10 and 20, and Al 0 83 Cu 0 17 alloys 15 and 25 are deposited thereon.
  • FIG. 2 shows a process of bonding the aluminum (Al) electrodes on the semiconductor substrates.
  • the semiconductor substrates 10 and 20 are heated with a temperature lower than the melting point of the Al Cu alloys 15 and 25, and a specific pressure is applied onto the semiconductor substrates 10 and 20.
  • the melting & r point of the Al 0 83 Cu 0 17 alloy ; s 15 and 25 is about 540 ° C, which is far lower than the melting point of the aluminum (Al) electrodes 13 and 23, that is, 650 ° C, thereby suitable for a fusion junction.
  • Aluminum (Al) and copper (Cu) are uniformly mixed in the Al Cu alloys 15 and 25.
  • FIG. 3 shows bonding of the aluminum (Al) electrodes to the semiconductor substrates.
  • the Al 0 83 Cu 0 17 alloy ; s 15 and 25 are de ⁇ posited on the aluminum (Al) electrodes 13 and 23, and then are heated, the reg to ion where the Al 083 Cu 0 17 alloy ; s 15 and 25 are deposed melts faster than the region of the aluminum (Al) electrodes 13 and 23, thereby preventing thermal damage at regions that are out of a junction portion.
  • contamination does not occur in the semiconductor manufacturing process, since typical alloy metals such as aluminum (Al) and copper (Cu) are used in the manufacturing process.
  • Copper (Cu) diffusion from an alloy coated at a high temperature to an aluminum (Al) electrode has an effect on lowering the melting point of the Al electrode, but does not have a significant effect on junction since the melting point of the alloy formed by such diffusion is higher than the melting point of its original alloy.
  • bonding can be carried out at a temperature lower than the melting b r point of an Al 0 83 Cu 0 17 alloy ; without having b an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

Abstract

A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al0.83Cu0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

Description

Description METHOD OF BONDING ALUMINUM ELECTRODES OF TWO
SEMICONDUCTOR SUBSTRATES
Technical Field
[1] The present invention relates to a semiconductor manufacturing process, and more particularly, to a method of bonding metal wires of two overlapped substrates in the process of manufacturing a semiconductor.
Background Art
[2] Electrodes, in general, are bonded in a semiconductor manufacturing process by using alloys having low melting points, such as lead (Pb), tin (Sn), and bismuth (Bi). The alloys, however, are harmful to human body, and may contaminate semiconductor manufacturing equipments due to low vapor pressure.
[3] Aluminum (Al) is commonly used for a metal electrode in most semiconductor manufacturing processes. In case that an aluminum (Al) electrode is bonded such that two substrates are overlapped having the aluminum (Al) electrode in therebetween, the aluminum (Al) electrode may be heated near to its melting point. Due to the heating of the aluminum (Al) electrode, remaining regions of the aluminum (Al) electrode, which are not bonding areas, also melt, which in turn has an adverse effect on existing wires or circuits of the substrates. Disclosure of Invention
Technical Problem
[4] In order to solve the aforementioned problems, an object of the present invention is to provide a method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates, without contaminating semiconductor manufacturing equipments.
Technical Solution
[5] A ccording to an aspect of the present invention, there is provided a method for bonding aluminum (Al) electrodes of two semiconductor substrates, comprising: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates.
[6] In the present invention, the metal alloy may be an Al Cu alloy. Description of Drawings
[7] FIGS. 1 to 3 show a process of bonding aluminum (Al) electrodes formed on two semiconductor substrates according to an embodiment of the present invention.
Best Mode
[8] Hereinafter, the present invention will be described in detail with reference to accompanying drawings.
[9] FIGS. 1 to 3 show a process of bonding aluminum (Al) electrodes formed on two semiconductor substrates according to an embodiment of the present invention.
[10] FIG. 1 shows aluminum (Al) electrodes formed on two semiconductor substrates.
[11] Aluminum (Al) electrodes 13 and 23 to be bonded are formed on semiconductor substrates 10 and 20, and Al 0 83 Cu 0 17 alloys 15 and 25 are deposited thereon.
[12] FIG. 2 shows a process of bonding the aluminum (Al) electrodes on the semiconductor substrates.
[13] With the aluminum (Al) electrodes 13 and 23 to be bonded being overlapped, the semiconductor substrates 10 and 20 are heated with a temperature lower than the melting point of the Al Cu alloys 15 and 25, and a specific pressure is applied onto the semiconductor substrates 10 and 20.
[14] Due to the pressure applied onto the semiconductor substrates 10 and 20, the aluminum (Al) electrodes 13 and 23 to be bonded are pressed, and thus the Al Cu
0 83 0 17 alloys 15 and 25 melt at a temperature that is lower than a melting point of the Al Cu
0 83
0 17 alloys 15 and 25 at atmospheric pressure.
[15] The melting & r point of the Al 0 83 Cu 0 17 alloy ; s 15 and 25 is about 540 ° C, which is far lower than the melting point of the aluminum (Al) electrodes 13 and 23, that is, 650 ° C, thereby suitable for a fusion junction. Aluminum (Al) and copper (Cu) are uniformly mixed in the Al Cu alloys 15 and 25.
0 83 0 17
[16] FIG. 3 shows bonding of the aluminum (Al) electrodes to the semiconductor substrates. [17] When the Al 0 83 Cu 0 17 alloy ; s 15 and 25 are de ^posited on the aluminum (Al) electrodes 13 and 23, and then are heated, the reg toion where the Al 083 Cu 0 17 alloy ; s 15 and 25 are deposed melts faster than the region of the aluminum (Al) electrodes 13 and 23, thereby preventing thermal damage at regions that are out of a junction portion. [18] In addition, contamination does not occur in the semiconductor manufacturing process, since typical alloy metals such as aluminum (Al) and copper (Cu) are used in the manufacturing process. Copper (Cu) diffusion from an alloy coated at a high temperature to an aluminum (Al) electrode has an effect on lowering the melting point of the Al electrode, but does not have a significant effect on junction since the melting point of the alloy formed by such diffusion is higher than the melting point of its original alloy.
[19] While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Industrial Applicability
[20] Accordingly, in the present invention, bonding can be carried out at a temperature lower than the melting b r point of an Al 0 83 Cu 0 17 alloy ; without having b an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

Claims

Claims
[1] L A method for bonding aluminum (Al) electrodes of two semiconductor substrates, comprising:
(a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes;
(b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and
(c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates.
2. The method according to claim 1, wherein the metal alloy is an Al Cu
0 83 0 17 alloy.
3. The method according to claim 1, wherein the temperature in the (c) is lower than about 54O0C.
PCT/KR2006/000712 2005-03-04 2006-03-02 Method of bonding aluminum electrodes of two semiconductor substrates WO2006093386A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007556090A JP2008530816A (en) 2005-03-04 2006-03-02 Method for joining aluminum electrodes of two semiconductor substrates
EP06716162A EP1854135A4 (en) 2005-03-04 2006-03-02 Method of bonding aluminum electrodes of two semiconductor substrates
US11/817,761 US7732300B2 (en) 2005-03-04 2006-03-02 Method of bonding aluminum electrodes of two semiconductor substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050017955A KR100591461B1 (en) 2005-03-04 2005-03-04 Aluminum electrode junction method of two semiconductor substrate
KR10-2005-0017955 2005-03-04

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WO2006093386A1 true WO2006093386A1 (en) 2006-09-08

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US (1) US7732300B2 (en)
EP (1) EP1854135A4 (en)
JP (1) JP2008530816A (en)
KR (1) KR100591461B1 (en)
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EP1854135A1 (en) 2007-11-14
EP1854135A4 (en) 2012-05-02
US7732300B2 (en) 2010-06-08
CN101133486A (en) 2008-02-27
US20080293184A1 (en) 2008-11-27
KR100591461B1 (en) 2006-06-20
CN100508151C (en) 2009-07-01
JP2008530816A (en) 2008-08-07

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