WO2006092919A1 - Optical element and method for manufacturing optical element - Google Patents

Optical element and method for manufacturing optical element Download PDF

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Publication number
WO2006092919A1
WO2006092919A1 PCT/JP2006/301435 JP2006301435W WO2006092919A1 WO 2006092919 A1 WO2006092919 A1 WO 2006092919A1 JP 2006301435 W JP2006301435 W JP 2006301435W WO 2006092919 A1 WO2006092919 A1 WO 2006092919A1
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Prior art keywords
substrate
thin film
optical element
thickness
film
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PCT/JP2006/301435
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French (fr)
Japanese (ja)
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Kunihiko Yoshino
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Nikon Corporation
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Priority to JP2007505821A priority Critical patent/JP5098640B2/en
Publication of WO2006092919A1 publication Critical patent/WO2006092919A1/en

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • G02B5/285Interference filters comprising deposited thin solid films

Definitions

  • the present invention relates to an optical element formed by forming a thin film such as a dielectric film on a substrate, and a method for manufacturing such an optical element.
  • a thin film is formed in multiple layers on a glass with a thickness of lmm or less, and light interference in the multilayer thin film is prevented. Some of them have desired optical characteristics.
  • Such an optical element has, for example, a glass substrate (BK7) having a 50 mm square and a thickness of about 0.3 mm on a low refractive material SiO and high refractive materials Nb 2 O 3, Ta 2 O 3, TiO, ZrO, Hf
  • Layers of thin films such as 2 2 5 2 5 2 2 o are stacked alternately (the thickness of each thin film is typically
  • a thin film having a refractive index in the middle of the thin film of the refractive index material may be a multilayer thin film having a film structure appropriately interposed between the low refractive index material and the high refractive index material.
  • a sputtering method or an ion beam assist method is often used.
  • the substrate having the multilayer thin film on the surface is cooled to room temperature, cut into a predetermined size by a dicing saw or the like, and used as an optical element.
  • the compressive stress is a stress that works to stretch the surface of the substrate on which the multilayer thin film is formed. For this reason, a multilayer thin film is formed on the substrate after film formation. Deforms so that the side is convex.
  • Such compressive stress is NbO
  • the deformation of the substrate exceeds the allowable limit, there is a problem that it becomes difficult to cut with a dicing saw or the like, or is damaged during handling. Further, there may be a problem that the surface of the cut out optical element does not become flat. If the surface of the cut optical element does not become flat, the optical characteristics change depending on the position of the light incident on the optical element. In addition, when these micro optical elements are arranged and sandwiched between other optical elements such as glass, the surface becomes uneven, causing problems such as poor adhesion.
  • the present invention has been made in view of such circumstances, and there are few deformations after the film formation is completed. Therefore, an optical element having good optical characteristics, which is easy to handle, such as cutting, and such It is an object to provide a method for manufacturing an optical element.
  • a first means for solving the above problem is an optical element formed by forming a thin film having a compressive stress on a substrate, and the substrate has a coefficient of linear expansion higher than that of the thin film.
  • An optical element characterized by using a material with a small coefficient of linear expansion and a thickness of 0.8 mm or less.
  • the thin film is formed by a sputtering method, an ion beam assist method, or the like, and these are performed at a high temperature. Therefore, if a material having a linear expansion coefficient smaller than that of the thin film is used as the substrate, the amount of contraction of the thin film becomes larger than the amount of contraction of the substrate at room temperature after completion of film formation. Therefore, the compressive stress of the thin film and the thermal stress generated between the substrate and the thin film cancel each other out, and the amount of deformation of the substrate generated by the compressive stress of the thin film is reduced when the substrate is at room temperature after film formation is completed. can do. When the thickness of the substrate is 0.8 mm or more, deformation due to film stress is reduced and the effectiveness of this means is reduced. Therefore, the thickness of the substrate is limited to 0.8 mm or less.
  • the effect of this means increases.
  • This means is not necessarily limited to a thin film formed by the sputtering method or the ion beam assist method.
  • a second means for solving the problem is the first means, wherein a ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 and 3: 1. It is characterized by.
  • the thickness of the thin film of the optical element formed by forming a thin film such as a dielectric film on the substrate is 10 ⁇ m to 30 ⁇ m.
  • the thickness of the substrate is 10 ⁇ m to 0.8 mm. Therefore, the effect of the first means is particularly large when the ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 and 3: 1.
  • the third means for solving the problem is the first means or the second means,
  • the thin film has a multilayer structure.
  • the first means and the second means may be of a multilayer film structure that forms an interference filter or the like, but if the number of stacked layers increases, it becomes easy to realize various spectral transmittance characteristics. On the other hand, since the stress of the thin film itself also increases, the effect obtained by applying the first means and the second means is particularly great when the thin film has a multilayer structure.
  • a fourth means for solving the above problem is any one of the first means to the third means, wherein the material is quartz. .
  • the linear expansion coefficient of a thin film is about 50 X 10 _7 ZK.
  • Sekiei 's linear expansion coefficient is about 5 ⁇ 10 _7 ⁇ , which is an order of magnitude smaller, so it is particularly effective when used as a material for the first means or the second means.
  • a fifth means for solving the above problem is a method of manufacturing an optical element including a step of forming a thin film having a compressive stress on a substrate, wherein the thin film line is formed on the substrate.
  • a material having a linear expansion coefficient smaller than the expansion coefficient and having a thickness of 0.8 mm or less is used, and the substrate having a thin film formed on the surface is returned to room temperature after the film formation is completed, the substrate is deformed.
  • the method of manufacturing an optical element is characterized in that film formation is performed at a temperature such that is within an allowable range.
  • the compressive stress and thermal stress of the thin film cancel each other, and deformation of the substrate at room temperature is reduced. Can do.
  • the magnitude of the thermal stress when the substrate is returned to room temperature increases as the temperature of the substrate during film formation increases, so if the substrate temperature during film formation is adjusted, the compressive stress and thermal stress of the thin film The amount of deformation when the substrate is returned to room temperature can be reduced.
  • the reason for limiting the thickness of the substrate to 0.8 mm or less is the same as the first means.
  • the thickness of the substrate becomes as thin as 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, and 0.1 mm, the effect of this means increases.
  • a sixth means for solving the above-mentioned problem is the fifth means, wherein the ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 and 3: 1. It is characterized by.
  • the seventh means for solving the above-mentioned problem is the fifth means or the sixth means,
  • the thin film has a multilayer structure.
  • An eighth means for solving the above problem is any one of the fifth means to the seventh means, wherein the material is quartz. .
  • FIG. 1 is a diagram for explaining a method of manufacturing an optical element which is an example of an embodiment of the present invention.
  • FIG. 1 is a diagram for explaining a method of manufacturing an optical element which is an example of an embodiment of the present invention.
  • a total of about 100 layers of 2 and NbO thin films 3 are alternately formed to form a multilayer optical thin film 4.
  • the thickness of the optical thin film 4 is about 30 ⁇ m.
  • the substrate 1 for example, in addition to quartz, for example, Tahara Serum® made by OHARA Inc., Zerodure made by Schott, Pyrex glass made by Coung, tempax glass made by Schott, etc. Small optical materials can be used.
  • quartz for example, Tahara Serum® made by OHARA Inc., Zerodure made by Schott, Pyrex glass made by Coung, tempax glass made by Schott, etc. Small optical materials can be used.
  • the multilayer optical thin film 4 has a linear expansion coefficient of about 50 X 10 _7 ZK (the linear expansion coefficient of Nb 0 is 6.
  • the linear expansion coefficient of the film is approximately 75 X 10 _7 mm, which is larger than the linear expansion coefficient of the multilayer optical thin film 4, so that the compressive stress and thermal stress work in the same direction when the substrate 1 after film formation is at room temperature The deformation of the substrate 1 was further increased.
  • the linear expansion coefficient of the substrate 1 is smaller than the linear expansion coefficient of the multilayer optical thin film 4, when the substrate 1 is brought from room temperature to a room temperature, which is usually about 200 ° C., the multilayer The compressive stress of the optical thin film 4 and the thermal stress generated by the temperature drop cancel each other, and the deformation (warp) of the substrate 1 is reduced. Therefore, when the substrate 1 is cut with a dicing saw or the like, it is easy to handle, and it is less likely to be damaged, and the surface accuracy of the cut out optical element is improved.
  • the film forming temperature is adjusted within a range that does not affect the film forming conditions, thereby adjusting the thermal stress when the substrate 1 is at room temperature.
  • the deformation of the substrate 1 at room temperature can be reduced.
  • the material of the substrate 1 After determining the film formation temperature, the film formation temperature is changed, and the film formation is performed. After that, the film formation temperature that minimizes the deformation when the substrate 1 is brought to the room temperature is found, and the film formation is performed at that temperature. What should I do?
  • the film forming temperature is limited, for example, the amount of deformation when the material of the substrate 1 is changed and the film is formed at a predetermined film forming temperature, and then the substrate 1 is brought to a normal temperature state. It is only necessary to find the material of the substrate 1 with the smallest value and use the material as the material of the substrate 1.
  • Substances constituting the thin film used in the present invention include Ta O, Ti in addition to SiO and NbO.
  • the average thickness of one layer of SiO is about 150nm, and the average thickness of one layer of Nb0 is 250 ⁇ .
  • the thickness of the multilayer optical thin film 4 thus formed was about 20 m.
  • the amount of warpage of the substrate 1 during the film formation was observed to be about 1.1 mm.
  • the amount of warpage of the substrate 1 was improved to 0.5 mm.
  • An optical element was manufactured in the same manner as in Example 1 except that glass (BK7) was used as the substrate 1.
  • the amount of warpage of the substrate 1 during the film formation was observed to be about 0.9 mm. After the film formation was completed, when the substrate 1 was brought to room temperature, the warping amount of the substrate 1 deteriorated to 1.4 mm. That is, the amount of warpage was about three times that of the example.
  • a dicing saw By cutting this substrate with a dicing saw, a large number of optical elements having a thickness of 0.3 mm and 8 mm ⁇ 0.3 mm square were cut out. When these elements were sandwiched between waveguides, some of them could not be fitted into the grooves formed in the waveguide. In addition, there was a force that could not obtain the desired optical characteristics. This is presumed to be caused by the fluctuation of the incident angle due to the warp of the surface.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

A multilayer optical thin film (4) is formed by alternately forming SiO2 thin films (2) and Nb2O5 thin films (3) approximately for 100 layers in total on a surface of a quartz substrate (1) having a thickness of 0.8mm or less. Since a linear expansion coefficient of the substrate (1) is small and a difference between a linear expansion coefficient of the multilayer optical thin film (4) is large, when the temperature of the substrate (1) is reduced to a normal temperature from a normal film forming state at approximately 200°C, compression stress of the multilayer optical thin film (4) and heat stress generated by temperature reduction cancel each other and deformation (warping) of the substrate (1) is reduced. Thus, a process of cutting the substrate (1) with a dicing saw and the like can be easily performed with less breakage, and surface accuracy of a cut out optical element is improved.

Description

光学素子及び光学素子の製造方法  Optical element and optical element manufacturing method
技術分野  Technical field
[0001] 本発明は、基板の上に誘電体膜等の薄膜を成膜して形成される光学素子、及びこ のような光学素子の製造方法に関するものである。  The present invention relates to an optical element formed by forming a thin film such as a dielectric film on a substrate, and a method for manufacturing such an optical element.
背景技術  Background art
[0002] 光通信等に使用される干渉フィルタや反射防止膜等の光学素子の中には、厚さが lmm以下のガラスの上に、薄膜を多層に形成し、多層薄膜における光の干渉を利用 して所望の光学特性を持たせるものがある。  [0002] In optical elements such as interference filters and antireflection films used for optical communications, etc., a thin film is formed in multiple layers on a glass with a thickness of lmm or less, and light interference in the multilayer thin film is prevented. Some of them have desired optical characteristics.
[0003] このような光学素子は、例えば、 50mm角、厚さが約 0.3mmのガラス基板(BK7)の 上に、低屈折物質である SiOと、高屈折物質である Nb O 、 Ta O 、 TiO 、 ZrO 、 Hf  [0003] Such an optical element has, for example, a glass substrate (BK7) having a 50 mm square and a thickness of about 0.3 mm on a low refractive material SiO and high refractive materials Nb 2 O 3, Ta 2 O 3, TiO, ZrO, Hf
2 2 5 2 5 2 2 o等の薄膜を交互に積層して (各薄膜の一層当たりの厚さは、典型的には数十應 Layers of thin films such as 2 2 5 2 5 2 2 o are stacked alternately (the thickness of each thin film is typically
2 2
〜数百應である)形成される。又、 Al Oのような前記低屈折率物質の薄膜と高屈折  ~ A few hundred). In addition, a thin film of the low refractive index material such as Al 2 O and a high refractive index
2 3  twenty three
率物質の薄膜の中間の屈折率を有する薄膜が、これらの低屈折率物質と高屈折率 物質の間に適当に介在する膜構造の多層薄膜とすることもある。  A thin film having a refractive index in the middle of the thin film of the refractive index material may be a multilayer thin film having a film structure appropriately interposed between the low refractive index material and the high refractive index material.
[0004] 成膜には、スパッタリング法やイオンビームアシスト法が使用されることが多い。成膜 の完了後、表面に多層薄膜を有する基板は常温に冷却され、ダイシングソ一等によ り所定の大きさに切断されて、光学素子として使用される。  [0004] For film formation, a sputtering method or an ion beam assist method is often used. After the film formation is completed, the substrate having the multilayer thin film on the surface is cooled to room temperature, cut into a predetermined size by a dicing saw or the like, and used as an optical element.
[0005] このような光学素子を製造する際に、多層薄膜の圧縮応力の影響で、基板に反り が発生するという問題点がある。この場合、圧縮応力とは、多層薄膜が成膜された側 の基板の面を伸ばすように働く応力のことであり、このために、成膜後の基板は、多 層薄膜が成膜された側が凸となるように変形する。このような圧縮応力は、 Nb Oの  [0005] When manufacturing such an optical element, there is a problem that the substrate is warped due to the compressive stress of the multilayer thin film. In this case, the compressive stress is a stress that works to stretch the surface of the substrate on which the multilayer thin film is formed. For this reason, a multilayer thin film is formed on the substrate after film formation. Deforms so that the side is convex. Such compressive stress is NbO
2 5 場合には、 50〜: L50MPa、 SiOの場合には、 150〜350MPaと推定されている。  In the case of 2 5, it is estimated that 50 to: L50 MPa, and in the case of SiO, 150 to 350 MPa.
2  2
[0006] この基板の変形が許容限度を超えると、ダイシングソ一等での切断が困難になった り、取り扱い中に破損したりするという問題がある。又、切り出された光学素子の表面 が平坦にならな 、と 、う問題点が発生する場合がある。切り出された光学素子の表面 が平坦にならないと、当該光学素子に入射する光の位置によって光学特性が変わつ たり、これらの微小な光学素子を並べて、ガラス等の他の光学素子の間に挟む際に、 表面が凹凸となり、接着がうまく行われない等の問題点が発生する。 [0006] If the deformation of the substrate exceeds the allowable limit, there is a problem that it becomes difficult to cut with a dicing saw or the like, or is damaged during handling. Further, there may be a problem that the surface of the cut out optical element does not become flat. If the surface of the cut optical element does not become flat, the optical characteristics change depending on the position of the light incident on the optical element. In addition, when these micro optical elements are arranged and sandwiched between other optical elements such as glass, the surface becomes uneven, causing problems such as poor adhesion.
発明の開示  Disclosure of the invention
[0007] 本発明はこのような事情に鑑みてなされたもので、成膜完了後の変形が少なぐ従 つて、切断等の取り扱いが容易で、光学特性の良好な光学素子、及びこのような光 学素子の製造方法を提供することを課題とする。  [0007] The present invention has been made in view of such circumstances, and there are few deformations after the film formation is completed. Therefore, an optical element having good optical characteristics, which is easy to handle, such as cutting, and such It is an object to provide a method for manufacturing an optical element.
[0008] 前記課題を解決するための第 1の手段は、圧縮応力を有する薄膜を基板上に成膜 して形成された光学素子であって、前記基板として、前記薄膜の線膨張係数よりも小 さい線膨張係数を有する、厚さが 0.8mm以下の素材が使用されていることを特徴とす る光学素子である。  [0008] A first means for solving the above problem is an optical element formed by forming a thin film having a compressive stress on a substrate, and the substrate has a coefficient of linear expansion higher than that of the thin film. An optical element characterized by using a material with a small coefficient of linear expansion and a thickness of 0.8 mm or less.
[0009] 一般に、薄膜の成膜はスッパタリング法ゃイオンビームアシスト法等によって行われ 、これらは高温で行われる。よって、基板として、薄膜の線膨張係数よりも小さい線膨 張係数を有する素材を使用すれば、成膜完了後に常温としたとき、薄膜の収縮量が 基板の収縮量より大きくなる。よって、薄膜の圧縮応力と温度降下により基板と薄膜 の間に発生する熱応力が相殺し合い、成膜完了後に基板が常温となった状態では、 薄膜の圧縮応力により発生する基板の変形量を小さくすることができる。基板の厚さ が 0.8mm以上となると、膜応力による変形が小さくなつて本手段の効果力 、さくなるの で、基板の厚さを 0.8mm以下に限定する。  In general, the thin film is formed by a sputtering method, an ion beam assist method, or the like, and these are performed at a high temperature. Therefore, if a material having a linear expansion coefficient smaller than that of the thin film is used as the substrate, the amount of contraction of the thin film becomes larger than the amount of contraction of the substrate at room temperature after completion of film formation. Therefore, the compressive stress of the thin film and the thermal stress generated between the substrate and the thin film cancel each other out, and the amount of deformation of the substrate generated by the compressive stress of the thin film is reduced when the substrate is at room temperature after film formation is completed. can do. When the thickness of the substrate is 0.8 mm or more, deformation due to film stress is reduced and the effectiveness of this means is reduced. Therefore, the thickness of the substrate is limited to 0.8 mm or less.
[0010] 基板の厚さは、 0.7mm、 0.6mm, 0.5mm, 0.4mm, 0.3mm, 0.2mm, 0.1mmと薄くなるに 従って、本手段の効果が大きくなる。なお、本手段は、必ずしも、スッパタリング法ゃィ オンビームアシスト法によって薄膜が形成されたものに限らない。  [0010] As the thickness of the substrate becomes as thin as 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, and 0.1 mm, the effect of this means increases. This means is not necessarily limited to a thin film formed by the sputtering method or the ion beam assist method.
[0011] 前記課題を解決するための第 2の手段は、前記第 1の手段であって、前記薄膜の 厚さと前記基板の厚さの比が 1 : 80から 3 : 1の間にあることを特徴とするものである。  [0011] A second means for solving the problem is the first means, wherein a ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 and 3: 1. It is characterized by.
[0012] 基板の上に誘電体膜等の薄膜を成膜して形成される光学素子の薄膜の厚さは、殆 どの場合 10 μ m〜30 μ mである。又、基板の厚さは、 10 μ m〜0.8mmである。よって 、薄膜の厚さと基板の厚さの比が 1 : 80から 3 : 1の間にある場合に、特に前記第 1の手 段の効果が大きい。  In most cases, the thickness of the thin film of the optical element formed by forming a thin film such as a dielectric film on the substrate is 10 μm to 30 μm. The thickness of the substrate is 10 μm to 0.8 mm. Therefore, the effect of the first means is particularly large when the ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 and 3: 1.
[0013] 前記課題を解決する為の第 3の手段は、前記第 1の手段又は第 2の手段であって、 前記薄膜が、多層膜構造を有することを特徴とするものである。 [0013] The third means for solving the problem is the first means or the second means, The thin film has a multilayer structure.
[0014] 前記第 1の手段、第 2の手段は、干渉フィルターなどを形成する多層膜構造のもの であってもよぐ積層数が多くなると、様々な分光透過率特性を実現しやすくなるが、 一方では薄膜自身の応力も大きくなるので、前記第 1の手段、第 2の手段を適用する こと〖こより得られる効果は、薄膜が、多層膜構造を有する場合に特に大きい。  [0014] The first means and the second means may be of a multilayer film structure that forms an interference filter or the like, but if the number of stacked layers increases, it becomes easy to realize various spectral transmittance characteristics. On the other hand, since the stress of the thin film itself also increases, the effect obtained by applying the first means and the second means is particularly great when the thin film has a multilayer structure.
[0015] 前記課題を解決するための第 4の手段は、前記第 1の手段から第 3の手段のいず れかであって、前記素材が、石英であることを特徴とするものである。 [0015] A fourth means for solving the above problem is any one of the first means to the third means, wherein the material is quartz. .
[0016] 一般に薄膜の線膨張係数は、約 50 X 10_7ZK程度とされて 、る。これに対し、石 英の線膨張係数は、約 5 Χ 10_7ΖΚ程度と一桁小さいので、前記第 1の手段又は第 2の手段の素材として用いると、特に効果が大きい。 [0016] Generally, the linear expansion coefficient of a thin film is about 50 X 10 _7 ZK. On the other hand, Sekiei 's linear expansion coefficient is about 5 Χ 10 _7 ΖΚ, which is an order of magnitude smaller, so it is particularly effective when used as a material for the first means or the second means.
[0017] 前記課題を解決するための第 5の手段は、基板の上に、圧縮応力を有する薄膜を 成膜する工程を含む光学素子の製造方法であって、前記基板に、前記薄膜の線膨 張係数よりも小さい線膨張係数を有する、厚さが 0.8mm以下の素材を使用し、成膜完 了後に、表面に薄膜が形成された前記基板を常温に戻したとき、前記基板の変形が 許容範囲に収まるような温度で成膜を行うことを特徴とする光学素子の製造方法であ る。 [0017] A fifth means for solving the above problem is a method of manufacturing an optical element including a step of forming a thin film having a compressive stress on a substrate, wherein the thin film line is formed on the substrate. When a material having a linear expansion coefficient smaller than the expansion coefficient and having a thickness of 0.8 mm or less is used, and the substrate having a thin film formed on the surface is returned to room temperature after the film formation is completed, the substrate is deformed. The method of manufacturing an optical element is characterized in that film formation is performed at a temperature such that is within an allowable range.
[0018] 前述のように、基板として薄膜の線膨張係数よりも小さい線膨張係数を有する素材 を使用すると、薄膜の圧縮応力と熱応力が相殺して、常温での基板の変形を小さく することができる。基板を常温に戻したときの熱応力の大きさは、成膜中の基板の温 度が高くなるにつれて大きくなるので、成膜中の基板の温度を調節すれば、薄膜の 圧縮応力と熱応力を相殺させて、基板を常温に戻したときの変形量を小さくすること ができる。なお、基板の厚さを 0.8mm以下に限定する理由は第 1の手段と同様である  [0018] As described above, when a material having a linear expansion coefficient smaller than that of the thin film is used as the substrate, the compressive stress and thermal stress of the thin film cancel each other, and deformation of the substrate at room temperature is reduced. Can do. The magnitude of the thermal stress when the substrate is returned to room temperature increases as the temperature of the substrate during film formation increases, so if the substrate temperature during film formation is adjusted, the compressive stress and thermal stress of the thin film The amount of deformation when the substrate is returned to room temperature can be reduced. The reason for limiting the thickness of the substrate to 0.8 mm or less is the same as the first means.
[0019] 基板の厚さは、 0.7mm、 0.6mm, 0.5mm, 0.4mm, 0.3mm, 0.2mm, 0.1mmと薄くなるに 従って、本手段の効果が大きくなる。 [0019] As the thickness of the substrate becomes as thin as 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, and 0.1 mm, the effect of this means increases.
[0020] 前記課題を解決するための第 6の手段は、前記第 5の手段であって、前記薄膜の 厚さと前記基板の厚さの比が 1 : 80から 3 : 1の間にあることを特徴とするものである。 [0020] A sixth means for solving the above-mentioned problem is the fifth means, wherein the ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 and 3: 1. It is characterized by.
[0021] 前記課題を解決する為の第 7の手段は、前記第 5の手段又は第 6の手段であって、 前記薄膜が、多層膜構造を有することを特徴とするものである。 [0021] The seventh means for solving the above-mentioned problem is the fifth means or the sixth means, The thin film has a multilayer structure.
[0022] 前記課題を解決するための第 8の手段は、前記第 5の手段から第 7の手段のいず れかであって、前記素材が、石英であることを特徴とするものである。  [0022] An eighth means for solving the above problem is any one of the fifth means to the seventh means, wherein the material is quartz. .
図面の簡単な説明  Brief Description of Drawings
[0023] [図 1]本発明の実施の形態の 1例である光学素子の製造方法を説明するための図で ある。  FIG. 1 is a diagram for explaining a method of manufacturing an optical element which is an example of an embodiment of the present invention.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0024] 以下、本発明の実施の形態の例を、図を用いて説明する。図 1は、本発明の実施 の形態の 1例である光学素子の製造方法を説明するための図である。石英製の基板 1 (約 50mm角、厚さ約 0.3mm)の表面に、スパッタリング装置を使用して、 SiO薄膜 2 Hereinafter, an example of an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram for explaining a method of manufacturing an optical element which is an example of an embodiment of the present invention. Using a sputtering device on the surface of a quartz substrate 1 (approximately 50 mm square, approximately 0.3 mm thick), SiO thin film 2
2 と Nb O薄膜 3を、交互に合計約 100層成膜して、多層光学薄膜 4を形成する。多層 A total of about 100 layers of 2 and NbO thin films 3 are alternately formed to form a multilayer optical thin film 4. multilayer
2 5 twenty five
光学薄膜 4の厚さは約 30 μ mである。  The thickness of the optical thin film 4 is about 30 μm.
[0025] 基板 1としては、例えば、石英の他に、例えば、株式会社オハラ製のタリアセラム∑、 ショット社製のゼロデュア、コーユング社製のパイレックスガラス、ショット社製のテンパ ックスガラス等、線膨張率が小さい光学材料を使用することができる。  [0025] As the substrate 1, for example, in addition to quartz, for example, Tahara Serum® made by OHARA Inc., Zerodure made by Schott, Pyrex glass made by Coung, tempax glass made by Schott, etc. Small optical materials can be used.
[0026] 多層光学薄膜 4の線膨張係数は、約 50 X 10_7ZKである(Nb 0の線膨張率は、 6. [0026] The multilayer optical thin film 4 has a linear expansion coefficient of about 50 X 10 _7 ZK (the linear expansion coefficient of Nb 0 is 6.
2 5  twenty five
5 X 10_5ZK、 SiOの線膨張率は、 4〜5 X 10_5ZKである。 )0従来のガラス(ΒΚ7) The linear expansion coefficient of 5 X 10 _5 ZK and SiO is 4 to 5 X 10 _5 ZK. ) 0 Conventional glass (ΒΚ7)
2  2
の線膨張係数は約 75 X 10_7ΖΚであり、多層光学薄膜 4の線膨張係数より大きかつ たので、成膜後の基板 1を常温としたとき、圧縮応力と熱応力が同じ向きに働き、基 板 1の変形をさらに大きくしていた。 The linear expansion coefficient of the film is approximately 75 X 10 _7 mm, which is larger than the linear expansion coefficient of the multilayer optical thin film 4, so that the compressive stress and thermal stress work in the same direction when the substrate 1 after film formation is at room temperature The deformation of the substrate 1 was further increased.
[0027] 本実施の形態においては、基板 1の線膨張係数が多層光学薄膜 4の線膨張率より 小さいので、基板 1を、通常 200°C程度である成膜状態から常温としたとき、多層光学 薄膜 4の圧縮応力と、温度降下によって発生する熱応力が相殺して、基板 1の変形( 反り)が軽減される。よって、基板 1をダイシングソ一等により切断するときにカ卩ェが容 易であり、破損することが少なぐかつ、切り出された光学素子の面精度が向上する。  In the present embodiment, since the linear expansion coefficient of the substrate 1 is smaller than the linear expansion coefficient of the multilayer optical thin film 4, when the substrate 1 is brought from room temperature to a room temperature, which is usually about 200 ° C., the multilayer The compressive stress of the optical thin film 4 and the thermal stress generated by the temperature drop cancel each other, and the deformation (warp) of the substrate 1 is reduced. Therefore, when the substrate 1 is cut with a dicing saw or the like, it is easy to handle, and it is less likely to be damaged, and the surface accuracy of the cut out optical element is improved.
[0028] 又、多層光学薄膜 4の形成時において、成膜条件に支障の無い範囲で、成膜温度 を調節し、それにより基板 1を常温としたときの熱応力を調節し、その結果、常温状態 での基板 1の変形を小さくすることができる。その方法として、例えば、基板 1の材料 を決定した後、成膜温度を変化させて成膜を行い、その後に基板 1を常温状態にし たときの変形量が最も小さくなるような成膜温度を見つけて、その温度で成膜をする ようにすればよい。 [0028] Further, when the multilayer optical thin film 4 is formed, the film forming temperature is adjusted within a range that does not affect the film forming conditions, thereby adjusting the thermal stress when the substrate 1 is at room temperature. The deformation of the substrate 1 at room temperature can be reduced. As the method, for example, the material of the substrate 1 After determining the film formation temperature, the film formation temperature is changed, and the film formation is performed. After that, the film formation temperature that minimizes the deformation when the substrate 1 is brought to the room temperature is found, and the film formation is performed at that temperature. What should I do?
[0029] 又、成膜温度に制約があるときは、例えば、基板 1の材料を変えて、所定の成膜温 度で成膜を行い、その後に基板 1を常温状態にしたときの変形量が最も小さくなるよ うな基板 1の材料を見つけて、その材料を基板 1の材料として使用するようにすれば よい。  [0029] When the film forming temperature is limited, for example, the amount of deformation when the material of the substrate 1 is changed and the film is formed at a predetermined film forming temperature, and then the substrate 1 is brought to a normal temperature state. It is only necessary to find the material of the substrate 1 with the smallest value and use the material as the material of the substrate 1.
[0030] 本発明に使用される薄膜を構成する物質としては、 SiO、 Nb Oの他に、 Ta O、 Ti  [0030] Substances constituting the thin film used in the present invention include Ta O, Ti in addition to SiO and NbO.
2 2 5 2 5 2 2 5 2 5
O、 ZrO、 HfO、 Al Oのような材料の他、成膜時に圧縮応力を発生するような材料In addition to materials such as O, ZrO, HfO, and Al O, materials that generate compressive stress during film formation
2 2 2 2 3 2 2 2 2 3
を使用することができる。  Can be used.
実施例  Example
[0031] 図 1に示すような基板 1として、 50mm角、厚さ 0.3mmの石英を用い、その表面にス ノ ッタリング装置により、 SiOを 51層、 Nb 0を 50層、交互に成膜した。成膜温度は約  [0031] As a substrate 1 as shown in FIG. 1, 50 mm square and 0.3 mm thick quartz was used, and 51 layers of SiO and 50 layers of Nb 0 were alternately formed on the surface of the substrate by a sputtering device. . Deposition temperature is about
2 2 5  2 2 5
200°Cであった。 1層の SiOの平均厚さは 150nm程度、 1層の Nb 0の平均厚さは 250η  200 ° C. The average thickness of one layer of SiO is about 150nm, and the average thickness of one layer of Nb0 is 250η.
2 2 5  2 2 5
m程度であった。このようにして形成された多層光学薄膜 4の厚さは約 20 mであつ た。  m. The thickness of the multilayer optical thin film 4 thus formed was about 20 m.
[0032] 成膜中における基板 1の反り量を観測したところ、約 1.1mmであった。成膜完了後、 基板 1を常温にしたところ、基板 1の反り量は 0.5mmに改善された。  [0032] The amount of warpage of the substrate 1 during the film formation was observed to be about 1.1 mm. When the substrate 1 was brought to room temperature after the film formation was completed, the amount of warpage of the substrate 1 was improved to 0.5 mm.
[0033] この基板をダイシングソ一でカットすることにより、厚さ 0.3mm、 8mm X 0.3mm角の光 学素子を多数切り出した。これらの素子を導波路中に挟んで使用したところ、導波路 に形成された溝に、問題なく嵌め込むことができた。又、所望の光学特性を得ること ができた。  [0033] By cutting this substrate with a dicing saw, a large number of optical elements having a thickness of 0.3 mm and 8 mm x 0.3 mm square were cut out. When these elements were sandwiched between waveguides, they could be inserted into the grooves formed in the waveguides without any problems. In addition, desired optical characteristics could be obtained.
比較例  Comparative example
[0034] 基板 1としてガラス (BK7)を使用した他は、実施例 1と同じ方法で光学素子を製造 した。  [0034] An optical element was manufactured in the same manner as in Example 1 except that glass (BK7) was used as the substrate 1.
[0035] 成膜中における基板 1の反り量を観測したところ、約 0.9mmであった。成膜完了後、 基板 1を常温にしたところ、基板 1の反り量は 1.4mmに悪ィ匕した。すなわち、実施例の 約 3倍の反り量となった。 この基板をダイシングソ一でカットすることにより、厚さ 0.3mm、 8mm X 0.3mm角の光 学素子を多数切り出した。これらの素子を導波路中に挟んで使用したところ、導波路 に形成された溝に嵌め込むことができないものがあった。又、所望の光学特性を得る ことができないものがあった力 これは、表面の反りによる入射角の変動に起因するも のと推定される。 [0035] The amount of warpage of the substrate 1 during the film formation was observed to be about 0.9 mm. After the film formation was completed, when the substrate 1 was brought to room temperature, the warping amount of the substrate 1 deteriorated to 1.4 mm. That is, the amount of warpage was about three times that of the example. By cutting this substrate with a dicing saw, a large number of optical elements having a thickness of 0.3 mm and 8 mm × 0.3 mm square were cut out. When these elements were sandwiched between waveguides, some of them could not be fitted into the grooves formed in the waveguide. In addition, there was a force that could not obtain the desired optical characteristics. This is presumed to be caused by the fluctuation of the incident angle due to the warp of the surface.

Claims

請求の範囲 The scope of the claims
[1] 圧縮応力を有する薄膜を基板上に成膜して形成された光学素子であって、前記基 板として、前記薄膜の線膨張係数よりも小さい線膨張係数を有する、厚さが 0.8mm以 下の素材が使用されていることを特徴とする光学素子。  [1] An optical element formed by forming a thin film having a compressive stress on a substrate, the substrate having a linear expansion coefficient smaller than that of the thin film and having a thickness of 0.8 mm An optical element characterized in that the following materials are used.
[2] 前記薄膜の厚さと前記基板の厚さの比が 1 : 80力 3 : 1の間にあることを特徴とする 請求項 1に記載の光学素子。  2. The optical element according to claim 1, wherein the ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 force 3: 1.
[3] 前記薄膜は、多層膜構造を有することを特微とする請求項 1に記載の光学素子。  [3] The optical element according to [1], wherein the thin film has a multilayer structure.
[4] 前記素材が、石英であることを特徴とする請求項 1に記載の光学素子。  4. The optical element according to claim 1, wherein the material is quartz.
[5] 基板の上に、圧縮応力を有する薄膜を成膜する工程を含む光学素子の製造方法 であって、前記基板に前記薄膜の線膨張係数よりも小さい線膨張係数を有する、厚 さが 0.8mm以下の素材を使用し、成膜完了後に、表面に薄膜が形成された前記基板 を常温に戻したとき、前記基板の変形が許容範囲に収まるような温度で成膜を行うこ とを特徴とする光学素子の製造方法。  [5] A method of manufacturing an optical element including a step of forming a thin film having compressive stress on a substrate, wherein the substrate has a linear expansion coefficient smaller than a linear expansion coefficient of the thin film. Using a material of 0.8 mm or less, after completion of film formation, when the substrate with the thin film formed on the surface is returned to room temperature, the film formation should be performed at such a temperature that the deformation of the substrate falls within an allowable range. A method for manufacturing an optical element.
[6] 前記薄膜の厚さと前記基板の厚さの比が 1 : 80力 3 : 1の間にあることを特徴とする 請求項 5に記載の光学素子の製造方法。  6. The method of manufacturing an optical element according to claim 5, wherein the ratio of the thickness of the thin film to the thickness of the substrate is between 1:80 force 3: 1.
[7] 前記薄膜は、多層膜構造を有することを特徴とする請求項 5に記載の光学索子の 製造方法。  7. The optical cord manufacturing method according to claim 5, wherein the thin film has a multilayer film structure.
[8] 前記素材が、石英であることを特徴とする請求項 5に記載の光学素子の製造方法。  8. The method for manufacturing an optical element according to claim 5, wherein the material is quartz.
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