WO2006088463A1 - Processus cvd en couche moléculaire à la pression atmosphérique - Google Patents

Processus cvd en couche moléculaire à la pression atmosphérique Download PDF

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Publication number
WO2006088463A1
WO2006088463A1 PCT/US2005/005337 US2005005337W WO2006088463A1 WO 2006088463 A1 WO2006088463 A1 WO 2006088463A1 US 2005005337 W US2005005337 W US 2005005337W WO 2006088463 A1 WO2006088463 A1 WO 2006088463A1
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WIPO (PCT)
Prior art keywords
gas
reactant
set forth
substrate
process set
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PCT/US2005/005337
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English (en)
Inventor
Simon I. Selitser
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Selitser Simon I
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Priority to PCT/US2005/005337 priority Critical patent/WO2006088463A1/fr
Publication of WO2006088463A1 publication Critical patent/WO2006088463A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Definitions

  • Atomic Layer Deposition ALD
  • Atomic Layer CVD ACVD
  • Adsorption to saturate the surface of a substrate with monolayer of one reactant, and then separately expose the surface to a second reactant, which reactivates the surface (and in the case of compound, may deposit a monolayer of the second constituent).
  • reaction gas AX flows into a reaction chamber
  • atoms of the reaction gas AX are chemically adsorbed on a substrate, resulting in a layer of A and a surface of ligand X (associative chemisorptions) (step 1).
  • the remaining reaction gas AX is purged with an inert gas (step 2).
  • the reaction gas BY flows in, and a chemical reaction between AX (surface) and BY (gas) occurs only on the surface of the substrate.
  • the Y ligand reacts with the X ligand, releasing XY, resulting in an atomic layer of AB on the substrate (dissociative chemisorptions)(step 3).
  • the remaining gas BY and by-products of the reaction (XY) are purged (step 4).
  • the thickness of the thin film can be increased by repeating the process cycle (steps 1-4) many times.
  • the film can be deposited one monolayer at a time it tends to be conformal and have uniform thickness.
  • ALCVD has been used to deposit a variety of materials, including II- VI and III-V compound semiconductors, elemental silicon and metals, SiO2, and metal oxides and nitrides. Depending on the process, films can be amorphous, epitaxial or polycrystalline. ALCVD typically has a very low deposition rate, on the order of 1 A/cycle, where each cycle lasts a few seconds. ALCVD reaction rate at low temperatures can be increased by using highly reactive elements, such as radicals. Such an approach has been described in a paper by K. Hiramatsu, H. Ohnishi, T. Takahama and K. Yamanishi, Formation of TiN Films with Low Cl Concentration by Pulsed Plasma Chemical Vapor Deposition, J. Vac. Sci. Techn.
  • Gate dielectrics which can be as thin as 10-60 A, are especially susceptible to contamination.
  • the presence of conductive chlorine or carbon will change the gate dielectric's properties, e.g. conductivity.
  • the resultant contaminants cause the normally insulating gate oxide layer to become slightly conductive, e.g. having intolerably high leakage current, thus being unable to function as a gate dielectric.
  • Prevention of high leakage current is precisely the reason why metal oxides with higher dielectric constant tend to be used instead of silicon oxide.
  • the typical deposition rate of conventional ALCVD is very low.
  • a highly desirable goal for any ALCVD-like process is to deposit 1 monolayer per cycle.
  • Higher or lower deposition rates usually manifest higher impurities concentration.
  • Much smaller deposition rates are more tolerable and can be as low as 0.1 monolayer per cycle.
  • Still, such low rates can be a serious obstacle for commercialization.
  • the obvious solution is a batch system. Batch systems bring problems of their own. To name a few of them: cross contamination from substrate to substrate and batch-to-batch, inadequate process repeatability from substrate to substrate and batch-to- batch, backside deposition, etc. All of these factors severely affect overall system yield and reliability, and therefore negatively impact net throughput and productivity.
  • Atomic Layer CVD is self-limiting process.
  • the precursor reactant (e.g., AX) in ALCVD must readily absorb at bonding sites on the growth surface in self-limiting mode, and once adsorbed must readily react with co-reactant (e.g., BY, in self-limiting mode too) to form the desired monolayer, (e.g., AB).
  • co-reactant e.g., BY, in self-limiting mode too
  • the self-limiting mode is what most distinguishes Atomic Layer CVD from conventional CVD. But it also creates a most notorious problem - impurities.
  • the kinetics of ALCVD reactions depends on the reaction rate between the precursor and a surface reactive site and on the number of available reactive sites. As the reactions advance to completion, the surface is transformed from being totally reactive to a surface of very few reactive sites, i.e., into a non-reactive (self-limiting mode). In many cases, especially when reaction rate is very low, and the deposition cycle is terminated before all sites have reacted, some number of reactive sites are left unchanged at the end of the cycle, creating a source of potential impurities.
  • Reaction rate is proportional to the product of the probability of the reaction and number of the reaction attempts (hitting frequency).
  • One way to reduce or completely eliminate sites that are left reactive at the end of the cycle is to wait until reaction occurs at all sites. Since this process is stochastic it can takes hours or even days or years to occur.
  • Another approach is to increase reaction probability. This can be done by increasing process temperature or by using different reactant. An increase in temperature could result in opposite effect, since the desorption rate of the surface film formed also increases with temperature. Temperature increase can also be adverse from a manufacturing point of view, since it can be incompatible with a thermal budget of IC manufacturing. Alteration of reactants used in the process is not always possible and often undesirable.
  • Reaction probability can be increased without actual change in precursor by using gas fragments (radicals) created by low-pressure plasma as was described above. But this also has not always been feasible since using low- pressure plasma can cause plasma damage to sensitive devices. The only reliable and trouble- free solution is to increase the hitting frequency (reaction attempts).
  • Conventional Atomic Layer CVD operating range is from about lmmTorr to about 1 Torr.
  • the present invention provides extraordinary increases in reaction rates for ALCVD by changing the operating pressure to atmospheric pressure. This will allow orders of magnitude increase (more than 1000 times) in the concentration of reactants available, with consequent enhancement of surface reaction rates. Since hitting frequency is proportional to the precursor pressure (or precursor density), more than 1000 times increase in pressure translates to more than 1000 times higher hitting frequency and, consequently, in proportionally higher reaction rate. Such a large increase in reaction rate will greatly reduce or completely eliminate the number of sites left reactive during processing time. Data shows that level of impurities can be reduced to near zero at very low temperatures if operation is performed at atmospheric pressure.
  • Reaction rate can be further increase by using atmospheric pressure plasma to create gas fragments (radicals).
  • An Advantage of using atmospheric pressure plasma over low- pressure plasma is that plasma damage can be completely eliminated while the density of radicals created is many orders of magnitude higher at atmospheric pressure than at low- pressure.
  • Detailed description of using atmospheric pressure plasma for device etching and benefits of using atmospheric pressure plasma in IC processing can be found in U.S. Patent 6,218,640 Atmospheric Pressure Inductive Plasma Apparatus issued in 2001 to S. Selitser, incorporated herein by reference.
  • Using atmospheric pressure plasma will completely eliminate plasma damage to sensitive semiconductor devices that is commonly associated with low-pressure plasma while producing many orders of magnitude higher radical concentrations found in conventional low- pressure plasma.
  • Fig. 1 is schematic drawing of an APMLCVD apparatus, capable to deposit atomic or molecular layers at atmospheric pressure.
  • Fig. 2 is schematic drawing of APMLCVD apparatus with optional radical generator.
  • Radical generator is using atmospheric pressure thermal plasma to generate chemical radicals (fragments).
  • Fig. 3 is schematic drawing of APMLCVD apparatus that consist of two chambers.
  • Fig. 4 is schematic drawing of APMLCVD apparatus that consist of two chambers and has movable substrate holder.
  • Fig. 5 is schematic drawing of APMLCVD apparatus that consist of two chambers and have optional radical generators.
  • Fig. 6 is schematic drawing of APMLCVD apparatus that divided into two chambers by gas flow.
  • Fig. 7 is schematic drawing of multi chamber APMLCVD apparatus.
  • Fig. 8 is schematic drawing of multichamber APMLCVD apparatus that use continues reactant flow without pulsing.
  • Fig. 9 is schematic drawing of multichamber APMLCVD apparatus that use continues reactant flow without pulsing and two injectors in each chamber.
  • Fig. 10 is schematic drawing of APMLCVD apparatus that consistent of one chamber and use continues reactant flow without interruption.
  • This invention is enhanced variation of ALCVD that overcomes the problems of conventional ALCVD producing high purity film without compromising throughput, conformality, and uniformity.
  • APMLCVD Atmospheric Pressure Molecular Layer CVD
  • Fig. 1 is cross-sectional schematic view of an embodiment 100 of the present invention, having a chamber 1 which is capable for operation at atmospheric pressure and deposition of one monolayer per cycle.
  • Heated substrate holder 2 located inside of the chamber and can be set for any temperature in the range of 50-800 OC.
  • Reactant gasses and purge gas (not shown) are introduced to the chamber 1 through manifold 3. Reaction at atmospheric pressure between reactants is much more vigorous than at low pressure. Special precaution is taken to prevent any residue to remain in the chamber, manifolds, valves, etc., at the completion of a mono-layer deposition cycle by flushing out the chamber, manifolds, valves, etc., by a purge gas cycle.
  • Reactant and purge gasses in the embodiment 100 leave the chamber 1 through exhaust 4.
  • exhaust 4 can be optionally maintained at differential pressure compare to the chamber 1.
  • FIG. 2 there is shown another embodiment of the present invention 200.
  • apparatus 200 in addition to the chamber 1, the substrate holder 2 and reactant, purge manifold 3 of Fig. 1, apparatus 200 has a separate reactant, purge gas manifold 5 provided for a second reactant.
  • purging gas is run through it during each purging cycle.
  • a second reactant, purging manifold 3 is provided to deliver reactant and purging gas to chamber 2 in an alternative dual reactant/purge process using the embodiment 200.
  • Purging gas is run through both manifolds 3, 5 simultaneously during a purging cycle in a dual reactant, purging process for embodiment 200. This will prevent reactant residue from remaining in stagnant areas of the reactant manifolds 3, 5.
  • a radical generator 6 (dotted lines) operating at atmospheric pressure can be, optionally, added to one or both manifolds.
  • a radical generator can be e.g., an inductive thermal plasma torch, a generator based on glow discharge, DC or RF arc, etc.
  • Fig. 3 is a schematic view of an embodiment 300 of the present invention apparatus that is capable of operation at atmospheric pressure and has a first chamber 7 and a physically separate second chamber 8.
  • a solid wall 9 in embodiment 300 separates Chambers 7 and 8.
  • Chambers 7 and 8 are each dedicated separately to each reactant used in the deposition process. This physically separated configuration will greatly reduce chances of gas phase reaction between residual reactants left from the previous cycle. Such reactions can contaminate one or both of the chambers and therefore contaminate films later deposited in the chamber.
  • Each chamber, 7 and 8 has its own dual gas manifold, 12 and 13, (purge, reactant) and separate exhaust, 14 and 15. Heated substrate holders, 10 and 11, are independently controlled and can be set up to different temperatures. Each chamber, 7 and 8, has separate control units, 16 and 17, that independently govern the process condition in each chamber.
  • apparatus 300 with additional chambers and supporting manifolds (not shown) can be added for each successive reactant or group of reactants.
  • Substrates can be moved from one chamber to another by a number of different known transport means.
  • One known way to do this is to use a robot mechanism (not shown) to transfer substrates from a substrate holder for one chamber to another substrate holder for another chamber.
  • an alternate embodiment of the apparatus 300 of Fig. 3 has optional radical generators, 6a and 6b added to one or both manifolds 12, 13.
  • the radical generators, 6a and 6b operate at atmospheric pressure,
  • Such radical generators include an inductive thermal plasma torch, a generator based on glow discharge, DC or RF arc, etc.
  • an apparatus 600 provides benefits of higher cleanliness, higher purity growth facilitation, and increased chambers 21a, 221b by inert purge gas from nozzle 22 used to separate reaction chambers. Strong separating flow from nozzle 22 can also be used as additional substrate purge when a substrate is moving from one reaction chamber 21a to another 221b. This will greatly enhance removal of residual gas and reaction bi-products from the surface of the substrate. Thus, improving growth of impurity-free thin films.
  • Fig. 7 there is shown a multi-chamber embodiment 700 of the present invention.
  • Moving substrates or substrate holders back and forth between two chambers is not always commercially and/or technically the best embodiment. In some situations it could be more beneficial and could improve throughput substantially to have a multi-chamber tool 700 instead of two separate chambers or one divided chamber apparatus.
  • Nc the number of chambers, Nc, equals six; i.e., chambers 28a, 28b, 28c, 28d, 28e, 28f.
  • substrates 26a, 26b, 26c 26d, 26e, 26f will be moved sequentially from one chamber to the next chamber by a rotating substrate holder track mechanism 30, pausing in each chamber for a single monolayer reactant-processing step.
  • the number of chambers should be even number if two or more reactants are required for each layer deposition and separation of at least one reactant is process beneficial.
  • multi-chamber apparatus 700 after substrate 26a is loaded into loading station 24, it will be moved to the first processing chamber 28a by the track mechanism 30, examples of which are well known in industry. After processing with a first reactant (e.g., AX) in chamber 28a, substrate 26a will be moved to the next processing chamber 28b where a second reactant (e.g., BY) will finish deposition of the first monolayer.
  • a first reactant e.g., AX
  • BY second reactant
  • the number of chambers can be any number and deposition of a monolayer will be done in each chamber the same way as described above for Fig. 1.
  • the total number of chambers, Nc can be also an integral multiplier of the number of reactants if processing each reactant should be separated and more then two reactants are required.
  • Separators 25a, 25b, 25c, 25d, 25e, 25f, 25g are positioned between the chambers.
  • the separators can be solid as shown in Figs. 3, 4 or 5 or be determined by gas flow curtains as shown in Fig. 6.
  • the Multi-chamber apparatus 700 substantially improves throughput compared to a single chamber or two-chamber apparatus.
  • Apparatus 800 independently processes each substrate with each reactant without stopping substrate movement.
  • Apparatus 800 includes the load/unload station 24, the separate chambers 28a-f and separators 25a-g, and the track mechanism 30 shown in Fig. 7.
  • the advanced intrinsic uniformity feature of AMLCVD is accomplished in system 800 by linear injectors 29a, 29b, 29c, 29d, 29e, 29f, as reactant gas sources.
  • deposited film thickness e.g. uniformity
  • the arrangement of the present invention shown in Fig. 8 would be very difficult to accomplish or impossible to commercialize for conventional CVD.
  • Each injector, 29a, 29b, 29c, 29d, 29e, 29f, on Fig. 8 will be used for one reactant only. This will allow continuous motion of the substrates 26a, 26b, 26c, 26d, 26e, and 26f from chamber to chamber without stopping. That is, from chamber 28a to 28b, from 28b to 28c, etc.
  • purging gas flow and exhaust manifolds [not shown] are included for each injector 29a, 29b, 29c, 29d, 29e, and 29f in the apparatus 800.
  • manifolds can be incorporated, for example, as indicated in Fig. 6 schematically by purge nozzle 22 and exhaust manifold 23.
  • Embodiment 900 has such pairs of injectors in each chamber, i.e., a first injector 31a, and second injector 32a in the first chamber 28a and another first injector 31a, and another 2nd injector 32a in the second chamber 28ba.
  • Purity and quality of the films deposited on substrates 26a-26f depends on a number of things, particularly how well the substrate surface is saturated with reactant in each chamber, the degree of completion of the chemisorptions at each available surface site and level of removing physisorbed reactant for the next chemisorption step, as we described above.
  • purging gas as described in Fig. 8
  • the addition of additional purging and re-injecting steps will diminish already poor process throughput and make commercialization very difficult.
  • adding additional purging and re-injecting steps e.g. by linear injectors 32a, b, c and 34, a, b, c
  • quality of the film can be improved without sacrificing system throughput.
  • FIG. 10 there is shown a schematic diagram of an embodiment 1000 of a multi-mono-layer deposition apparatus in accordance with the present invention.
  • a series of separated injectors 35 are spaced around rotating circular substrate holder track 30.
  • Substrates 26 are sequentially loaded on the track 30 at a substrate load/unload station 24.
  • the track 30 rotates in one direction, carrying the substrates 26 in sequence under each successive injector 35 at a speed that ensures saturation by reactants flowing from the injectors. After passing under the last injector of the series, substrates 26 are unloaded at station 24.
  • Each injector 35 incorporates independently operated reactant, purging and exhaust gas manifolds and controls (not shown) and acts as one complete mono-layer deposition and reactant purge cycle for each substrate 26 as if passes there under in the multi-mono-layer deposition process.
  • the spacing of the injectors, indicated by double-head arrow 40 is selected so that cross-contamination from adjacent injectors is prevented by purging gas flows and exhaust manifolds incorporated in each injector 35.
  • the reactants flowing from each injector may be all different, or all the same or some combination of same and different reactants.
  • embodiments of the present APMLCVD invention provides, and particularly the embodiment 1000.
  • the number of injectors (and the reactants and purge gasses controlled thereat) participating in one monolayer deposition can be easily varied from one process to another. This will greatly increase system flexibility and consequently broaden its commercial potential.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L’invention concerne un processus CVD en couche atomique et un appareil idoine permettant de déposer une simple couche ou bien de multiples couches de matériau de manière séquentielle à la pression atmosphérique. Les dépôts de monocouches séquentiels sont séparés dans le temps et dans l’espace grâce à des combinaisons de barrières physiques et/ou des rideaux de gaz et/ou par un mouvement physique des substrats d’une chambre de déposition ou d’un emplacement à un(e) autre. On utilise des courants pulsés et/ou continus de réactifs et de gaz de purge dans d’autres modes de réalisation de la présente invention. L’injection de réactifs, l’écoulement de gaz de purge et les courants d’échappement dans des emplacements ou des chambres de déposition séparés sont contrôlés par la coordination de collecteurs de gaz dédiés et de systèmes de commande conçus pour chaque processus ou emplacement de déposition séparé dans l’espace ou dans le temps.
PCT/US2005/005337 2005-02-17 2005-02-17 Processus cvd en couche moléculaire à la pression atmosphérique WO2006088463A1 (fr)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7713884B2 (en) * 2007-06-22 2010-05-11 Renesas Technology Corp. Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer
US8137464B2 (en) 2006-03-26 2012-03-20 Lotus Applied Technology, Llc Atomic layer deposition system for coating flexible substrates
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
WO2013157057A1 (fr) * 2012-04-18 2013-10-24 Furukawa Co., Ltd. Appareil de dépôt en phase vapeur et procédé de dépôt d'un film
US8637123B2 (en) 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
CN110565072A (zh) * 2018-06-05 2019-12-13 长鑫存储技术有限公司 一种原子层沉积方法
CN115584488A (zh) * 2016-06-17 2023-01-10 朗姆研究公司 用于膜轮廓调节的喷头帘式气体方法和系统
US11894257B2 (en) 2017-10-27 2024-02-06 Applied Materials, Inc. Single wafer processing environments with spatial separation
US12087573B2 (en) 2019-07-17 2024-09-10 Lam Research Corporation Modulation of oxidation profile for substrate processing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346477B1 (en) * 2001-01-09 2002-02-12 Research Foundation Of Suny - New York Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
US20040201027A1 (en) * 2003-04-11 2004-10-14 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346477B1 (en) * 2001-01-09 2002-02-12 Research Foundation Of Suny - New York Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
US20040201027A1 (en) * 2003-04-11 2004-10-14 Eastman Kodak Company Apparatus and method for encapsulating an OLED formed on a flexible substrate

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9238868B2 (en) 2006-03-26 2016-01-19 Lotus Applied Technology, Llc Atomic layer deposition method for coating flexible substrates
US8137464B2 (en) 2006-03-26 2012-03-20 Lotus Applied Technology, Llc Atomic layer deposition system for coating flexible substrates
US8202366B2 (en) 2006-03-26 2012-06-19 Lotus Applied Technology, Llc Atomic layer deposition system utilizing multiple precursor zones for coating flexible substrates
US9469901B2 (en) 2006-03-26 2016-10-18 Lotus Applied Techonology, Llc Atomic layer deposition method utilizing multiple precursor zones for coating flexible substrates
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
US7713884B2 (en) * 2007-06-22 2010-05-11 Renesas Technology Corp. Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer
US8637123B2 (en) 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
WO2013157057A1 (fr) * 2012-04-18 2013-10-24 Furukawa Co., Ltd. Appareil de dépôt en phase vapeur et procédé de dépôt d'un film
CN104246006A (zh) * 2012-04-18 2014-12-24 古河机械金属株式会社 气相沉积装置以及相关的方法
US9273396B2 (en) 2012-04-18 2016-03-01 Furukawa Co., Ltd. Vapor deposition apparatus and method associated
JP2013222884A (ja) * 2012-04-18 2013-10-28 Furukawa Co Ltd 気相成長装置および成膜方法
CN115584488A (zh) * 2016-06-17 2023-01-10 朗姆研究公司 用于膜轮廓调节的喷头帘式气体方法和系统
US11894257B2 (en) 2017-10-27 2024-02-06 Applied Materials, Inc. Single wafer processing environments with spatial separation
CN110565072A (zh) * 2018-06-05 2019-12-13 长鑫存储技术有限公司 一种原子层沉积方法
CN110565072B (zh) * 2018-06-05 2023-06-09 长鑫存储技术有限公司 一种原子层沉积方法
US12087573B2 (en) 2019-07-17 2024-09-10 Lam Research Corporation Modulation of oxidation profile for substrate processing

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