WO2006085925A2 - Synthese d'un hybride autoassemble de diamant ultra-nanocristallin et de nanotubes de carbone - Google Patents

Synthese d'un hybride autoassemble de diamant ultra-nanocristallin et de nanotubes de carbone Download PDF

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Publication number
WO2006085925A2
WO2006085925A2 PCT/US2005/020596 US2005020596W WO2006085925A2 WO 2006085925 A2 WO2006085925 A2 WO 2006085925A2 US 2005020596 W US2005020596 W US 2005020596W WO 2006085925 A2 WO2006085925 A2 WO 2006085925A2
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WO
WIPO (PCT)
Prior art keywords
diamond
carbon nanotubes
substrate
uncd
hybrid
Prior art date
Application number
PCT/US2005/020596
Other languages
English (en)
Other versions
WO2006085925A3 (fr
Inventor
Xiao Xingcheng
John A. Carlisle
Orlando Auciello
Jeffrey W. Elam
Dieter M. Gruen
Original Assignee
The University Of Chicago
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/097,603 external-priority patent/US20060222850A1/en
Application filed by The University Of Chicago filed Critical The University Of Chicago
Priority to EP05857452A priority Critical patent/EP1771597A2/fr
Publication of WO2006085925A2 publication Critical patent/WO2006085925A2/fr
Publication of WO2006085925A3 publication Critical patent/WO2006085925A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Definitions

  • the present invention relates to various combinations of carbonaceous
  • carbon nanotubes are distinct from graphite although both consist
  • CNT's are the strongest known material and also
  • nanocrystalline diamond films are distinct from single crystal diamond
  • hermetic corrosion resistant coating for biodevices cold cathode electron source, and
  • MEMS/ NEMS micro- and nano- electromechanical systems
  • an object of the invention is to provide a synthesis of
  • nanocrystalline diamond and carbon nanotubes to form a covalently bonded hybrid
  • Another object of the invention is to provide a material comprising carbon
  • nanotubes and diamond covalently bonded together are nanotubes and diamond covalently bonded together.
  • Another object of the invention is to provide a method of producing carbon
  • nanotubes and diamond covalently bonded together comprising providing a substrate,
  • Another object of the invention is to provide a hybrid of carbon nanotubes and
  • diamond made by the method of providing a substrate, depositing nanoparticles of a
  • suitable catalyst on a surface of the substrate, depositing diamond seeding material on the surface of the substrate, and exposing the substrate to a hydrogen poor plasma for
  • the invention consists of certain novel features and a combination of parts
  • FIGURE Ia is a SEM showing the evolution of the hybrid UNCD/ CNTs
  • FIG. Ib is a SEM showing the hybrid structures of UNCD and CNTs with a
  • FIG. Ic is a SEM having a fully dense hybrid structure of UNCD and CNTs
  • FIG. Id is a SEM showing pure UNCD
  • FIG. 2a is a TEM image of CNTs prepared using PECVD with Ar/ CH 4 as
  • FIG. 2b is a HRTEM image of CNTs multiwalled with well-ordered graphene sheets and typical defect densities
  • FIG. 3 is a graphical representation of a Raman spectra of CNTs, UNCD and
  • FIG. 4 is a graph of C Is NEXAFS of CNTs, UNCD and UNCD/CNTs hybrid
  • FIGS. 5-14 are SEM images of covalently bonded diamond and CNTs of the
  • FIG. 15 is a schematic representation of a combination of carbon nanotubes
  • PECVD plasma enhanced chemical vapor deposition
  • NRL ultrananocrystalline diamond
  • nanoparticles of transition metals such as
  • Ni, Fe and Co are used as catalysts for growing CNTs, whereas micro or nano-diamond UNCD powders are typically needed to be present on the substrate
  • Iron films with different thickness were deposited on silicon
  • IPLAS microwave plasma deposition system
  • the iron particles to catalyze CNTs formation.
  • the iron film thickness determines the size
  • the substrate was cooled down to 700 0 C
  • nano particles The size and density of nano particles are dependent of thickness of metal
  • Ar and 1 seem CH 4 the typical flow rate for growing ultrananocrystalline diamond) for
  • nanotubes is controlled by the combination of seeding time, thickness of catalyst thin
  • Thickness of the catalyst thin films not only control the catalyst particle
  • the hybrid nanostructures were studied using a Hitachi S-4700 field emission
  • NEFS Near Edge X-ray Absorption Fine Structure
  • the diamond reference sample was a standard Type Ha diamond.
  • the graphite reference sample was a highly oriented pyrolitic graphite (HOPG).
  • CNTs can be varied by controlling the relative amounts of transitional metal
  • Fig. 1 shows SEM images revealing the structural evolution from pure CNTs to
  • CNTs interconnected by CNTs, with both ends of some individual nanotubes terminating on
  • UNCD and CNT can grow into each other. It may be that the CNTs and UNCD are covalently bonded together or it may be
  • the combination is a hybrid, but whichever form it may be, the composition is new.
  • Fig. Ic shows a SEM image of a material that very nearly realizes
  • the nanotubes had diameters in the range of about 2 to 10 nm and the
  • nanotube walls were comprised of reasonably well-ordered graphene sheets.
  • Fig. 3 compares the Raman spectra of UNCD, CNT, and the UNCD/CNT
  • the estimated inner-diameters are on the order of one nm, which may
  • NXAFS Near-edge x-ray absorption fine structure
  • Fig. Ic are shown in Fig.4.
  • UNCD films consist of about 95% sp 3 -bonded carbon, with
  • nanocomposite is higher and the dip around 302 eV is shallower than the corresponding ones in UNCD, implying a slightly higher fraction of the graphite phase resulting from
  • nanostructures that is amendable to modern patterning techniques to further organize
  • the diamond may be nanocrystalline or UNCD and may be electrically
  • Nitrogen doping of UNCD provides an n-type electrical conductor.
  • the growth plasma used to grow the composite materials can be further tailored
  • patterning techniques such as photolithography, e-beam lithography,
  • a nanotube catalyst can be patterned on a
  • substrate as an arrays of dots on a substrate surface with arbitrary diameter and pitch
  • the alignment of the carbon nanotubes within the hybrid thin film materials can be any alignment of the carbon nanotubes within the hybrid thin film materials.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention a trait à un matériau de nanotubes de carbone et de diamant assemblés. L'invention a également trait à un procédé de production de nanotubes de carbone et de diamant liés par covalence avec un substrat sur lequel sont déposées des nanoparticules d'un catalyseur approprié à la surface d'un substrat. Un matériau d'ensemencement de diamant est déposé à la surface du substrat, et ensuite le substrat est exposé à un plasma pauvre en hydrogène pour un temps suffisant pour la croissance de nanotubes de carbone et de diamant en liaison covalente.
PCT/US2005/020596 2004-06-10 2005-06-10 Synthese d'un hybride autoassemble de diamant ultra-nanocristallin et de nanotubes de carbone WO2006085925A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05857452A EP1771597A2 (fr) 2004-06-10 2005-06-10 Synthese d'un hybride autoassemble de diamant ultra-nanocristallin et de nanotubes de carbone

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US57853204P 2004-06-10 2004-06-10
US60/578,532 2004-06-10
US11/097,603 2005-04-01
US11/097,603 US20060222850A1 (en) 2005-04-01 2005-04-01 Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes

Publications (2)

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WO2006085925A2 true WO2006085925A2 (fr) 2006-08-17
WO2006085925A3 WO2006085925A3 (fr) 2007-09-07

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EP (1) EP1771597A2 (fr)
KR (1) KR20070072849A (fr)
WO (1) WO2006085925A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8383200B2 (en) 2009-05-27 2013-02-26 GM Global Technology Operations LLC High hardness nanocomposite coatings on cemented carbide
US8404313B1 (en) 2006-03-22 2013-03-26 University Of South Florida Synthesis of nanocrystalline diamond fibers
CN113088921A (zh) * 2021-04-13 2021-07-09 昆明理工大学 一种多孔金刚石膜/三维碳纳米线网络复合材料的制备方法及其产品

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100781289B1 (ko) * 2006-12-18 2007-11-30 한국과학기술연구원 자기 정렬된 탄소나노물질의 대면적 합성법
US20230260800A1 (en) * 2022-02-15 2023-08-17 Applied Materials, Inc. Methods to reduce uncd film roughness

Citations (2)

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WO2001061719A1 (fr) * 2000-02-16 2001-08-23 Fullerene International Corporation Structures de nanotubes a revetement diamant/carbone pour emission de champ electronique efficace
US20040061429A1 (en) * 2002-09-26 2004-04-01 Tadashi Sakai Discharge lamp

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WO2001061719A1 (fr) * 2000-02-16 2001-08-23 Fullerene International Corporation Structures de nanotubes a revetement diamant/carbone pour emission de champ electronique efficace
US20040061429A1 (en) * 2002-09-26 2004-04-01 Tadashi Sakai Discharge lamp

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GAO J S ET AL: "Control of sizes and densities of nano catalysts for nanotube synthesis by plasma breaking method" MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 107, no. 2, 15 March 2004 (2004-03-15), pages 113-118, XP004492088 ISSN: 0921-5107 *
KÜTTEL OLIVIER M ET AL: "Electron field emission from phase pure nanotube films grown in a methane/hydrogen plasma" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 73, no. 15, 12 October 1998 (1998-10-12), pages 2113-2115, XP012021124 ISSN: 0003-6951 *
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8404313B1 (en) 2006-03-22 2013-03-26 University Of South Florida Synthesis of nanocrystalline diamond fibers
US8383200B2 (en) 2009-05-27 2013-02-26 GM Global Technology Operations LLC High hardness nanocomposite coatings on cemented carbide
CN113088921A (zh) * 2021-04-13 2021-07-09 昆明理工大学 一种多孔金刚石膜/三维碳纳米线网络复合材料的制备方法及其产品

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Publication number Publication date
KR20070072849A (ko) 2007-07-06
EP1771597A2 (fr) 2007-04-11
WO2006085925A3 (fr) 2007-09-07

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