WO2006081803A1 - Substance luminescente emettant du jaune et source lumineuse comprenant ladite substance luminescente - Google Patents

Substance luminescente emettant du jaune et source lumineuse comprenant ladite substance luminescente Download PDF

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Publication number
WO2006081803A1
WO2006081803A1 PCT/DE2006/000160 DE2006000160W WO2006081803A1 WO 2006081803 A1 WO2006081803 A1 WO 2006081803A1 DE 2006000160 W DE2006000160 W DE 2006000160W WO 2006081803 A1 WO2006081803 A1 WO 2006081803A1
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WO
WIPO (PCT)
Prior art keywords
phosphor
light source
radiation
range
alone
Prior art date
Application number
PCT/DE2006/000160
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German (de)
English (en)
Inventor
Tim Fiedler
Wolfram Hempel
Frank Jermann
Original Assignee
Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH
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Application filed by Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH filed Critical Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH
Publication of WO2006081803A1 publication Critical patent/WO2006081803A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342—Silicates

Definitions

  • the invention is based on a yellow-emitting phosphor and also relates to a light source, in particular LED, with such a phosphor.
  • the phosphor belongs to the class of orthosilicates.
  • An oxyorthosilicate of the stoichiometry A3SiO5: D is hitherto known only from DE 102 59 946. There it is a Ba3SiO5: Eu, Mn, which emits in the yellow orange at about 590 nm. It is used together with other phosphors. Furthermore, WO 2004/085570 describes an oxyorthosilicate Sr3SiO5: Eu. Presentation of the invention
  • Another object is to provide a light source, in particular an LED, with such a phosphor.
  • the phosphors of this invention may also be used in conjunction with other UV or blue light sources such as molecular radiators (e.g., in-discharge lamp), blue OLEDs, or in combination with blue EL phosphors.
  • molecular radiators e.g., in-discharge lamp
  • blue OLEDs e.g., blue OLEDs
  • blue EL phosphors e.g., blue EL phosphors
  • the phosphor according to the invention makes it possible to produce color-stable, efficient turn signal or traffic light yellow LEDs or LED modules based on a conversion LED.
  • Other areas of application include LEDs with good color rendering, color-on-demand LEDs or white OLEDs.
  • the newly synthesized phosphor A 3 SiO 5 Eu emits with high efficiency.
  • A Sr
  • it is very narrow-band (FWHM ⁇ 80 nm at 460 nm excitation) in orange-yellow.
  • the dominant wavelength is 581 nm in the case of excitation at 460 nm.
  • the Eu doping is 3%. It can be delayed by increasing the Eu content for a longer time. Conversely, the emission shifts to shorter wavelengths with low Eu content.
  • the phosphor is well excitable in the range 250-500 nm as well as in the extreme UV below 220 nm.
  • A Sr, Ba, Ca may be alone or in combination.
  • the route goes with three parts SrC03 and one part SiO2.
  • the starting substances are mixed and annealed at high temperatures in forming gas (first synthesis: for example, at 1500 to 1600 0 C, forming gas).
  • the resulting phase was clearly identified by XRD as the Sr3SiO5 phase.
  • a high proportion of Eu as doping cause a slight shift of the reflections, as known per se for doping.
  • the phosphor is very stable to radiation, which allows use in high-brightness LEDs.
  • the Sr can in particular be partially or completely substituted with Ba or Ca, so that other wavelengths can be achieved.
  • the Sr3SiO5 structure is retained, introducing only partial amounts of Ca and Ba.
  • this phosphor can be excited efficiently by a blue-emitting LED, in particular of the InGaN type. It is also suitable for use with other light sources, and in particular for use with other phosphors to produce very high Ra white light.
  • phosphors whose typical quantum efficiency is well over 70%, and which absorb very well in the range of short-wave UV or blue radiation, especially at 450 to 455 nm, where the strongest chips are available, can be provide efficient, especially warm white, LEDs with a color rendering index Ra of up to 97. Depending on the desired optimization, a typical Ra value is 88 to 95.
  • a green-yellow phosphor is added, for example YAG: Ce, (Lu, Y) 3 (Al, Ga) 5O12: Ce , SrSi2O2N2: Eu or (Sr 1 Ba, Ca) 2SiO4: Eu.
  • red-emitting component with peak emission at 600 to 650 nm in particular 605 to 615 nm, for example, a nitrile silicate such as (Sr, Ca) 2Si5N8: Eu or a sulfide.
  • an LED is further proposed, which is designed as a yellow-orange emitting luminescence conversion LED, with a primary radiation source, which is a chip emitting in the blue or UV spectral region and a layer of phosphor preceding it, which partially or fully converts the radiation of the chip, the phosphor being of the class of the above-described orthosilicates doped with europium.
  • a primary radiation source which is a chip emitting in the blue or UV spectral region and a layer of phosphor preceding it, which partially or fully converts the radiation of the chip, the phosphor being of the class of the above-described orthosilicates doped with europium.
  • the oxyorthosilicate is in a particularly suitable embodiment, a mixed silicate, and in particular the general formula (Sr 1-xy Ca x Ba y) 3 Si0 5: Eu z where x ⁇ 0.3, y ⁇ 0.8, y ⁇ preferably 0, 5, and x + y ⁇ 0.8, and z ⁇ 0.45.
  • the often applicable codoping with Mn in addition to Eu shows here rather as counterproductive and leads to a significant deterioration of the phosphor properties.
  • x a preferred lower limit of 0, more preferably 0.05, for y, is a preferred lower limit of 0.1.
  • z ⁇ 0.15.
  • the emission of the chip is such that it has a peak wavelength in the range 445 to 465 nm, in particular 450 to 455 nm.
  • the highest efficiencies of the primary radiation can be achieved.
  • Another field of application is a color-emitting LED (color-on-demand) whose emission is located in the orange-red to yellow region of the spectrum.
  • the invention further relates to an illumination system with LEDs, wherein the illumination system also contains electronic components. These convey, for example, the dimmability.
  • Another task of the electronics is the control of individual LEDs or groups of LEDs. These functions can be realized by previously known electronic elements.
  • FIG. 1 shows the emission spectrum of a phosphor according to the invention
  • FIG. 2 shows an XRD spectrum of a phosphor according to the invention
  • Figure 3 shows the structure of a conversion LED
  • FIG. 4 shows the excitation spectrum of a phosphor
  • FIG. 5 shows the decrease in brightness of an LED as a function of the operating time
  • FIG. 6 shows a low-pressure lamp with indium filling using a
  • FIG. It shows the emission of the phosphor Sr3SiO5: Eu with an Eu content of 3 mol% of the Sr occupied lattice sites.
  • the emission maximum of the pure phosphor (peak) is 581 nm.
  • the excitation was carried out at 460 nm.
  • the FWHM is 72 nm.
  • the dominant wavelength is 581 nm.
  • the quantum efficiency is a good 80%.
  • FIG. 2 shows an XRD spectrum of this phosphor.
  • the structure fits perfectly with the orthosilicate lattice A3SiO5 with the PDF number 26-984, but not with the common orthosilicate A2SiO4.
  • the construction of a light source for yellow light is shown explicitly in FIG.
  • the light source is a semiconductor component with a chip 1 of the type InGaN with a peak emission wavelength of 440 to 470 nm, for example 460 nm, which is embedded in an opaque base housing 8 in the region of a recess 9.
  • the chip 1 is connected via a bonding wire 14 to a first terminal 3 and directly to a second electrical terminal 2.
  • the recess 9 is filled with a potting compound 5, which contains as main constituents an epoxy casting resin (80 to 90 wt .-%) and phosphor pigments 6 of a phosphors (less than 20 wt .-%).
  • the phosphor is the Sr-Oxyorthosilikat presented as a first embodiment with 3% Eu.
  • the recess 9 has a wall 17, which serves as a reflector for the primary and secondary radiation from the chip 1 and the pigments 6.
  • the dominant wavelength at 581 nm just meets the specification for the yellow in traffic lights.
  • the efficiency and the color rendering index Ra are adjusted by the level of doping with Eu, preferably a value for Eu of 2 to 4 mol% of the A.
  • the nitridosilicate M a Si y N z : Eu which has as a permanent component Ca and as an admixture Sr in a proportion of 0 to 15 mol%.
  • the combination of blue primary and red, yellow-green and orange-yellow secondary radiation mixes to warm white with high Ra from 88 to 97.
  • the excitation spectrum of a typical phosphor is shown in FIG. It shows the good excitability in the range 250 to 500 nm and the further good excitability in the range below 220 nm, which justifies a good suitability for the conversion of VUV sources, for example excimer radiators. Particularly good is the excitability at 320 to 460 nm.
  • FIG. 5 shows the decrease in brightness of the phosphor according to the invention during intensive irradiation with a laser for more than 100 minutes to demonstrate the high radiation stability. A decrease is in no way recognizable. The stability is thus significantly better than previously known yellow-orange phosphors, such as BasSi5N8: Eu.
  • FIG. 6 shows a low-pressure discharge lamp 20 with a mercury-free gas filling 21 (schematized) which contains an indium compound and a buffer gas analogously to WO 02/10374, wherein a layer 22 made of orthosilicate Sr 3 SiO 5 : Eu is attached to the inside of the piston 23.
  • This orthosilicate is ideally adapted to the indium radiation because it has significant proportions in both the UV and in the blue spectral range, both of which are equally well absorbed by this orthosilicate, which it against in this use against makes the previously known phosphors superior.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne une substance luminescente de structure A3SiO5:D, dans laquelle A représente Sr, Ba, Ca et D représente Eu, délivrant une émission jaune-orange et qui est caractérisée par une stabilité élevée. Ladite substance luminescente peut être utilisée dans des sources lumineuses de différentes sortes.
PCT/DE2006/000160 2005-02-04 2006-02-02 Substance luminescente emettant du jaune et source lumineuse comprenant ladite substance luminescente WO2006081803A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005005263A DE102005005263A1 (de) 2005-02-04 2005-02-04 Gelb emittierender Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff
DE102005005263.0 2005-02-04

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WO2006081803A1 true WO2006081803A1 (fr) 2006-08-10

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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1935958A1 (fr) * 2005-08-10 2008-06-25 Mitsubishi Chemical Corporation Phosphore et dispositif luminescent l'utilisant
DE102009030205A1 (de) 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
DE102009059798A1 (de) 2009-12-21 2011-06-22 LITEC-LP GmbH, 17489 Mittel zur Verbesserung der Stabilität gegenüber der auftretenden Strahlenbelastung sowie Resistenz gegenüber dem Einfluß von Luftfeuchtigkeit bei Strontiumoxyorthosilikat-Leuchtstoffen
KR20110115716A (ko) 2010-04-16 2011-10-24 서울반도체 주식회사 스트론튬 옥시오소실리케이트 유형의 형광체를 갖는 발광 장치
US8066909B2 (en) 2004-06-10 2011-11-29 Seoul Semiconductor Co., Ltd. Light emitting device
US8070984B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
US8071988B2 (en) 2004-05-06 2011-12-06 Seoul Semiconductor Co., Ltd. White light emitting device comprising a plurality of light emitting diodes with different peak emission wavelengths and a wavelength converter
US8134165B2 (en) 2007-08-28 2012-03-13 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
US8137589B2 (en) 2007-08-22 2012-03-20 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8163203B2 (en) 2008-02-27 2012-04-24 The Regents Of The University Of California Yellow emitting phosphors based on Ce3+-doped aluminate and via solid solution for solid-state lighting applications
US8188492B2 (en) 2006-08-29 2012-05-29 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light
US8273266B2 (en) 2005-11-11 2012-09-25 Seoul Semiconductor Co., Ltd. Copper-alkaline-earth-silicate mixed crystal phosphors
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
US8329060B2 (en) 2008-10-22 2012-12-11 General Electric Company Blue-green and green phosphors for lighting applications
US8344611B2 (en) 2009-06-16 2013-01-01 The Regents Of The University Of California Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications
US8535564B2 (en) 2009-06-24 2013-09-17 Seoul Semiconductor, Co., Ltd. Light emitting device employing luminescent substances with oxyorthosilicate luminophores
US8703016B2 (en) 2008-10-22 2014-04-22 General Electric Company Phosphor materials and related devices
US8847254B2 (en) 2005-12-15 2014-09-30 Seoul Semiconductor Co., Ltd. Light emitting device
US8920676B2 (en) 2005-09-30 2014-12-30 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US8963173B2 (en) 2009-12-21 2015-02-24 Seoul Semiconductor Co., Ltd. Light emitting device having strontium oxyorthosilicate type phosphors
WO2015060701A1 (fr) * 2013-10-22 2015-04-30 Vilnius University Diode électroluminescente à conversion par phosphore, de manière respectueuse sur le plan photobiologique
US9209162B2 (en) 2004-05-13 2015-12-08 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US9312246B2 (en) 2006-03-31 2016-04-12 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
DE202008005509U1 (de) 2008-02-26 2009-07-09 Ledon Lighting Jennersdorf Gmbh LED-Modul mit anwendungsspezifischer Farbeinstellung

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US8071988B2 (en) 2004-05-06 2011-12-06 Seoul Semiconductor Co., Ltd. White light emitting device comprising a plurality of light emitting diodes with different peak emission wavelengths and a wavelength converter
US11605762B2 (en) 2004-05-13 2023-03-14 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10916684B2 (en) 2004-05-13 2021-02-09 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10672956B2 (en) 2004-05-13 2020-06-02 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10186642B2 (en) 2004-05-13 2019-01-22 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US9209162B2 (en) 2004-05-13 2015-12-08 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US8883040B2 (en) 2004-06-10 2014-11-11 Seoul Semiconductor Co., Ltd. Luminescent material
US8158028B2 (en) 2004-06-10 2012-04-17 Seoul Semiconductor Co., Ltd. Luminescent material
US8070984B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
US8075802B2 (en) 2004-06-10 2011-12-13 Seoul Semiconductor Co., Ltd. Luminescent material
US8089084B2 (en) 2004-06-10 2012-01-03 Seoul Semiconductor Co., Ltd. Light emitting device
US8900482B2 (en) 2004-06-10 2014-12-02 Seoul Semiconductor Co., Ltd. Light emitting device
US8252203B2 (en) 2004-06-10 2012-08-28 Seoul Semiconductor Co., Ltd. Luminescent material
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
US8066909B2 (en) 2004-06-10 2011-11-29 Seoul Semiconductor Co., Ltd. Light emitting device
US8070983B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
EP1935958A4 (fr) * 2005-08-10 2010-10-27 Mitsubishi Chem Corp Phosphore et dispositif luminescent l'utilisant
EP1935958A1 (fr) * 2005-08-10 2008-06-25 Mitsubishi Chemical Corporation Phosphore et dispositif luminescent l'utilisant
US8277687B2 (en) 2005-08-10 2012-10-02 Mitsubishi Chemical Corporation Phosphor and light-emitting device using same
US8920676B2 (en) 2005-09-30 2014-12-30 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US8273266B2 (en) 2005-11-11 2012-09-25 Seoul Semiconductor Co., Ltd. Copper-alkaline-earth-silicate mixed crystal phosphors
US8847254B2 (en) 2005-12-15 2014-09-30 Seoul Semiconductor Co., Ltd. Light emitting device
US9576939B2 (en) 2006-03-31 2017-02-21 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US9312246B2 (en) 2006-03-31 2016-04-12 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US12009348B2 (en) 2006-03-31 2024-06-11 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US11322484B2 (en) 2006-03-31 2022-05-03 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US8188492B2 (en) 2006-08-29 2012-05-29 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light
US8674380B2 (en) 2006-08-29 2014-03-18 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light
US8501040B2 (en) 2007-08-22 2013-08-06 Seoul Semiconductor Co., Ltd. Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8137589B2 (en) 2007-08-22 2012-03-20 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8431954B2 (en) 2007-08-28 2013-04-30 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
US8134165B2 (en) 2007-08-28 2012-03-13 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
US8163203B2 (en) 2008-02-27 2012-04-24 The Regents Of The University Of California Yellow emitting phosphors based on Ce3+-doped aluminate and via solid solution for solid-state lighting applications
US8329060B2 (en) 2008-10-22 2012-12-11 General Electric Company Blue-green and green phosphors for lighting applications
US8703016B2 (en) 2008-10-22 2014-04-22 General Electric Company Phosphor materials and related devices
US8344611B2 (en) 2009-06-16 2013-01-01 The Regents Of The University Of California Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications
US8703014B2 (en) 2009-06-24 2014-04-22 Seoul Semiconductor Co., Ltd. Luminescent substances having Eu2+-doped silicate luminophores
DE102009030205A1 (de) 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
US8535564B2 (en) 2009-06-24 2013-09-17 Seoul Semiconductor, Co., Ltd. Light emitting device employing luminescent substances with oxyorthosilicate luminophores
US20120181481A1 (en) * 2009-12-21 2012-07-19 Litec-Lp Gmbh Strontium oxyorthosilicate phosphors having improved stability under a radiation load and resistance to atmospheric humidity
DE102009059798A1 (de) 2009-12-21 2011-06-22 LITEC-LP GmbH, 17489 Mittel zur Verbesserung der Stabilität gegenüber der auftretenden Strahlenbelastung sowie Resistenz gegenüber dem Einfluß von Luftfeuchtigkeit bei Strontiumoxyorthosilikat-Leuchtstoffen
US8963173B2 (en) 2009-12-21 2015-02-24 Seoul Semiconductor Co., Ltd. Light emitting device having strontium oxyorthosilicate type phosphors
US8440106B2 (en) 2009-12-21 2013-05-14 Seoul Semiconductor Co., Ltd. Strontium oxyorthosilicate phosphors having improved stability under a radiation load and resistance to atmospheric humidity
US8173042B2 (en) 2009-12-21 2012-05-08 Seoul Semiconductor Co., Ltd. Strontium oxyorthosilicate phosphors having improved stability under a radiation load and resistance to atmospheric humidity
KR20110115716A (ko) 2010-04-16 2011-10-24 서울반도체 주식회사 스트론튬 옥시오소실리케이트 유형의 형광체를 갖는 발광 장치
WO2015060701A1 (fr) * 2013-10-22 2015-04-30 Vilnius University Diode électroluminescente à conversion par phosphore, de manière respectueuse sur le plan photobiologique

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