WO2006076253A2 - Plasma processing system and baffle assembly for use in plasma processing system - Google Patents

Plasma processing system and baffle assembly for use in plasma processing system Download PDF

Info

Publication number
WO2006076253A2
WO2006076253A2 PCT/US2006/000591 US2006000591W WO2006076253A2 WO 2006076253 A2 WO2006076253 A2 WO 2006076253A2 US 2006000591 W US2006000591 W US 2006000591W WO 2006076253 A2 WO2006076253 A2 WO 2006076253A2
Authority
WO
WIPO (PCT)
Prior art keywords
baffle
plasma processing
processing system
inserts
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/000591
Other languages
French (fr)
Other versions
WO2006076253A3 (en
Inventor
Steven Fink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2006076253A2 publication Critical patent/WO2006076253A2/en
Anticipated expiration legal-status Critical
Publication of WO2006076253A3 publication Critical patent/WO2006076253A3/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32633Baffles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to a component for a plasma processing system and,
  • baffle assembly employed in plasma processing system
  • plasma is formed within the plasma reactor under vacuum conditions by heating
  • the heated electrons can have energy ⁇ sufficient to sustain dissociative
  • chamber pressure, gas flow rate, etc. are chosen to produce a population of charged
  • a vacuum pump provides a reduced pressure atmosphere in a plasma
  • a (pumping) baffle plate comprising a plurality of small passages
  • baffle plate's surface can be exposed to the
  • baffle plate physically and chemically active plasma, and, in time, can erode. So the baffle plate
  • the present invention provides a baffle assembly located in a plasma processing
  • the baffle assembly includes
  • baffle carrier attached to the plasma processing system and at least two baffle inserts
  • baffle inserts are supported by the baffle inserts
  • FIG. 1 shows a simplified block diagram of a plasma processing system
  • FIG. 2 A shows a plan view of a baffle assembly for a plasma processing system
  • FIGs. 2B-2E show a variety of passages which may be employed in the baffle
  • FIG 3 shows a plan view of a baffle assembly for a plasma processing system
  • FIG 4 A shows a plan view of a baffle assembly for a plasma processing system
  • FIG 4B shows a cross sectional view of a baffle assembly for a plasma
  • FIG 4C shows a cross sectional view of a baffle assembly for a plasma processing system according to an alternative embodiment to FIG 4B;
  • FIG 5 A shows a plan view of a baffle assembly for a plasma processing system
  • FIG. 5B shows a cross sectional view of a baffle assembly for a plasma
  • FIG 6 A shows a plan view of a baffle assembly for a plasma processing system
  • FIG 6B shows a cross sectional view of a baffle assembly for a plasma
  • FIG 6C shows a cross sectional view of a baffle assembly for a plasma
  • FIG 7 presents a method of maintenance of a plasma processing system
  • FIG 1 depicted in FIG 1 comprises a plasma processing chamber 10, an upper
  • a substrate holder 30 for supporting a substrate 35 and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced
  • the plasma> processing system 1 can be
  • upper electrode 22 comprises an electrode plate
  • upper assembly 20 can
  • the upper electrode is any combination of two or more thereof.
  • the upper electrode is any combination of two or more thereof.
  • the upper electrode is any combination of two or more thereof.
  • the uppermost layer 22 can be coupled to an RF source.
  • the uppermost layer 22 can be coupled to an RF source.
  • assembly 20 comprises a cover coupled to the upper electrode 22, wherein the upper
  • electrode 22 is maintained at an electrical potential equivalent to that of the plasma
  • the plasma processing chamber 10 the uppermost plasma processing chamber 10.
  • Plasma processing chamber 10 can further comprise an optical viewport 16
  • Optical viewport 16 can permit monitoring of optical emission from the processing plasma in process space 12.
  • Chuck assembly 30 for holding substrate 35 can further comprise a vertical
  • a bellows shield 54 can be coupled to the chuck assembly 30 and
  • the plasma processing system 1 further comprises a focus ring 60, a shield ring
  • the baffle assembly 100 comprises a baffle carrier 110 that can be attached to
  • the embodiment of the baffle assembly 100 shown in FIG 2 A comprises nine
  • baffle inserts 120 are employed. Of course, any number of baffle inserts 120 may be employed.
  • the baffle inserts 120 can be disc-shaped. All the baffle inserts 120 can have
  • baffle inserts 120 exchangeable.
  • the baffle inserts 120 comprises a plurality of passages 122 therethrough in
  • each passage 122 can have a slot shape
  • each passage 122 can have a round shape.
  • passages 122 ' have a higher density near the chuck assembly 30 than away from the
  • each passage 122 can have a jagged shape.
  • FIG. 2E illustrates that passages 122 can have letter shapes.
  • T In the embodiment "T”,
  • the baffle carrier 110 as depicted FIG 2 A, is formed into a ring surrounding
  • the chuck assembly 30 and can be secured to the chuck assembly 30 with, for example,
  • the baffle carrier 110 comprises holes 112
  • each hole 112 can be
  • Flanges 114 can be formed at the rims of the holes 112.
  • the flanges 114 can have
  • baffle carrier 110 upper surfaces lower than the upper surface of the baffle carrier 110, enabling the baffle
  • baffle inserts 120 to rest thereon.
  • the baffle inserts 120 can be attached to baffle carrier 110 or the baffle inserts 120 can merely lie on baffle carrier 110.
  • FIG. 3 Another embodiment of the present invention is illustrated in FIG 3. In the
  • baffle assembly 100 has eight baffle inserts 120 but can have at least two
  • baffle inserts The baffle inserts 120 can be distributed to adjoin each other and
  • the baffle inserts 120 comprise small passages
  • passages 122 are round in the illustrated embodiment, the
  • passages 122 can be placed into any kind of disposition and be formed in any shape,
  • baffle inserts such as, for example, those shapes shown in FIG. 2B, 2C, 2D, or 2E.
  • the baffle inserts are such as, for example, those shapes shown in FIG. 2B, 2C, 2D, or 2E.
  • baffle inserts 120 function as exchangeable modular parts.
  • the baffle assembly 100 comprises a baffle carrier 110 for supporting the
  • baffle inserts 120 The baffle carrier 110 defines holes 112 corresponding to the baffle
  • the holes 112 have a similar shape as the baffle inserts 120 and can be
  • baffle inserts 120 can be supported by the baffle carrier 110.
  • baffle inserts 120 can be supported by the baffle carrier 110.
  • the baffle inserts 120 can be supported by the baffle carrier 110.
  • baffle inserts 120 can be fastened to baffle carrier 100.
  • FIGs. 4A and 4B Another embodiment of the present invention is illustrated in FIGs. 4A and 4B.
  • the baffle assembly 100 comprises a baffle carrier 110 and baffle inserts 120.
  • baffle carrier 110 comprises baffle carrier ring 116 surrounding the chuck assembly 30,
  • baffle carrier supports 118 mounted to the, baffle carrier ring 116.
  • baffle carrier 110 has eight baffle carrier supports 118, but any number
  • baffle carrier supports can be chosen for supporting a corresponding number of baffle
  • the baffle inserts 120 comprise small passages 122 therethrough.
  • baffle inserts 120 comprise round shape passages 122 in the illustrated embodiment
  • the passages 122 can be placed into any kind of disposition and be formed
  • the baffle carrier supports 118 can be secured to the baffle
  • baffle carrier ring 116 attached to the chuck assembly 30.
  • supports comprise tabs 118A on the first ends 118D and the tabs 118A can be attached
  • baffle carrier ring 116 with mounting hardware 118B.
  • supports 118 have small projections, 118C above the second ends 118E thereof so that
  • the baffle inserts 120 can be positioned on the baffle carrier supports 118. Further, a
  • small indent 116A can be formed on the top of the baffle carrier ring 116 to position the
  • baffle inserts between the projections 118C and the indent 116A.
  • baffle carrier supports 118 can be placed substantially horizontally.
  • the baffle inserts 120 can be kept substantially horizontal.
  • the baffle carrier supports 118 are
  • the baffle carrier supports 118 can be inclined relative to horizontal.
  • baffle inserts 120 are positioned higher than the first ends 118D.
  • FIGs. 5 A and 5B Another embodiment of the present invention is illustrated in FIGs. 5 A and 5B.
  • the baffle assembly 100 comprises baffle inserts 120 substantially
  • baffle carrier 110 for supporting the baffle inserts
  • the baffle inserts 120 can be formed into the same fan shape, enabling them to
  • baffle inserts 120 function as exchangeable
  • the baffle inserts 120 comprise small passages 122 therethrough.
  • baffle inserts 120 comprise round shape passages 122 in the illustrated embodiment
  • the passages 122 can be placed into any kind of disposition and be formed
  • Baffle carrier 110 comprises a baffle carrier ring 116 secured to the chuck
  • the baffle carrier 110 consists of a
  • baffle carrier ring 116 surrounding the chuck assembly 30.
  • the baffle carrier ring 116 defines a retaining slit 116B comprising an opening extending downwardly from the top
  • the baffle inserts 120 have baffle tabs 124 which can be inserted into the
  • baffle tabs 124 can be any shape of baffle tabs 124.
  • FIG 6 A and 6B Another embodiment of the present invention is illustrated in FIG 6 A and 6B.
  • baffle assembly 100 comprises baffle inserts 120 substantially
  • baffle carrier 110 for supporting the baffle inserts
  • baffle inserts 120 are formed into the same shape, enabling them to be
  • baffle inserts 120 function as exchangeable modular
  • the baffle inserts 120 comprise small passages 122 therethrough.
  • the baffle inserts 120 comprise round shape passages 122 in the embodiment, the
  • passages 122 can be placed into any kind of disposition and be formed into any kind of
  • shapes such as, for example, those shapes shown in FIG 2B, 2C, 2D, or 2E.
  • the baffle carrier 110 can comprise a first baffle carrier ring 116 surrounding
  • the second chuck assembly 30 can be secured to the chuck assembly 30.
  • the second chuck assembly 30 can be secured to the chuck assembly 30.
  • baffle carrier ring 117 can be attached to the chamber 10. First ends 119A of the
  • support rods 119 are coupled to the first baffle carrier ring 116 with first mounting
  • the second baffle ring 117 can be secured to the second ends 119C of
  • baffle inserts 120 can be horizontally supported by the first baffle carrier ring
  • a first indent 116A is formed on the top surface of the first baffle
  • baffle inserts 120 are formed on the top surface of the second baffle carrier ring 117.
  • the baffle inserts 120 are formed on the top surface of the second baffle carrier ring 117.
  • first indent 116 A can be positioned between the first indent 116 A and the second indent 117 A.
  • the baffle inserts 120 can be supported by any different structure.
  • FIG 6C is a diagrammatic representation of the baffle inserts 120.
  • FIG. 1 illustrates support rods 119 having a U-shape portion on the end thereof. The first
  • baffle carrier ring 116 comprises tunnel holes 116C extend horizontally. The first ends
  • support rods 119 are formed in U-shape, and the tip of the second ends 119B are fitted
  • a first indent 116A is formed on the top surface of the
  • first baffle carrier ring 116 and a second indent 117A corresponding to the first indent
  • baffle 116A is formed on the top surface of the second baffle carrier ring 117.
  • inserts 120 can be positioned between the first indent 116A and the second indent 117A.
  • FIG. 7 presents the method of maintenance of a plasma processing system
  • diagram 200 begins at 210 in which the baffle carrier 110 is attached to the plasma
  • the baffle carrier 110 can be attached to the chuck
  • the baffle inserts 120 are installed on the baffle carrier 110.
  • baffle inserts 120 need not be secured to any part of the plasma processing system 1.
  • baffle assembly 100 comprising the baffle carrier 110 and baffle
  • inserts 120 are installed to the plasma processing system 1, the plasma processing
  • plasma processing system 1 is deactivated. At 250, the baffle inserts 120 are removed
  • baffle inserts 120 can merely lie on
  • the plasma processing system 1 and can easily remove the baffle inserts 120 from the
  • the removed baffle inserts 120 are cleaned. If one or more of the
  • baffle inserts 120 cannot be cleaned, they can be exchanged for new baffle insert(s) 120.
  • baffle inserts 120 can be exchanged for new baffle inserts
  • the cleaned baffle inserts 120 can be installed on the baffle
  • baffle insert(s), the new baffle insert(s) are installed to the plasma processing system 1.
  • baffle inserts are exchanged with other baffle insert(s), the other baffle
  • insert(s) are installed to the plasma processing system 1 (as shown at 370).
  • insert(s) are installed to the plasma processing system 1 (as shown at 370).

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention presents a baffle assembly located in a plasma processing system, comprising a baffle carrier attached to the plasma processing system, and at least two baffle inserts having a plurality of passages therethrough, the at least two baffle inserts being supported by the baffle carrier.

Description

PLASMA PROCESSING SYSTEM AND BAFFLE ASSEMBLY FOR USE IN
PLASMA PROCESSING SYSTEM
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to U.S. Patent 6,837,966 and U.S. Application
Numbers 10/647,469, filed August 26, 2003, 10/705,224, filed November 12, 2003 and
11/006,544, filed December 8, 2004. The entire contents of each of this patent and these
patent applications are herein incorporated by reference in their entirety.
FIELD OF THE INVENTION
[0002] The present invention relates to a component for a plasma processing system and,
more particularly, to a baffle assembly employed in plasma processing system
surrounding a substrate holder.
BACKGROUND OF THE INVENTION
[0003] The fabrication of integrated circuits (IC) in the semiconductor industry
typically employs plasma to create and assist surface chemistry within a plasma reactor
necessary to remove material from and deposit material to a substrate. In general,
plasma is formed within the plasma reactor under vacuum conditions by heating
electrons to energies sufficient to sustain ionizing collisions with a supplied process gas. Moreover, the heated electrons can have energy ■ sufficient to sustain dissociative
collisions and, therefore , a specific set of gases under predetermined conditions (e.g.
chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged
species and chemically reactive species suitable to the particular process being
performed within the chamber (e.g. etching processes where materials are removed
from the substrate or deposition processes where materials are added to the substrate).
In general, a vacuum pump provides a reduced pressure atmosphere in a plasma
processing chamber. A (pumping) baffle plate comprising a plurality of small passages
therethrough is located between the plasma and the pump to confine the plasma while
permitting gas to be evacuated. The baffle plate's surface can be exposed to the
physically and chemically active plasma, and, in time, can erode. So the baffle plate
should be cleaned or replaced periodically.
SUMMARY OF THE INVENTION
[0004] The present invention provides a baffle assembly located in a plasma processing
system having a chuck assembly for holding a substrate. The baffle assembly includes
a baffle carrier attached to the plasma processing system and at least two baffle inserts
having a plurality of passages therethrough. The baffle inserts are supported by the
baffle carrier. BRIEF DESCRIPTION OF THE DRAWINGS
[0005] These and other aspects of the invention will become more apparent and more
readily appreciated from the following detailed description of the exemplary
embodiments of the invention taken in conjunction with the accompanying drawings,
where: '
[0006] FIG. 1 shows a simplified block diagram of a plasma processing system
comprising a baffle plate according to an embodiment of the present invention;
[0007] FIG. 2 A shows a plan view of a baffle assembly for a plasma processing system
according to an embodiment of the present invention;
[0008] FIGs. 2B-2E show a variety of passages which may be employed in the baffle
inserts;
[0009] FIG 3 shows a plan view of a baffle assembly for a plasma processing system
according to an embodiment of the present invention;
[00010] FIG 4 A shows a plan view of a baffle assembly for a plasma processing system
according to an embodiment of the present invention;
[00011] FIG 4B shows a cross sectional view of a baffle assembly for a plasma
processing system according to the embodiment of FIG 4 A;
[00012] FIG 4C shows a cross sectional view of a baffle assembly for a plasma processing system according to an alternative embodiment to FIG 4B;
[00013] FIG 5 A shows a plan view of a baffle assembly for a plasma processing system
according to an embodiment of the present invention;
[00014] FIG. 5B shows a cross sectional view of a baffle assembly for a plasma
processing system according to the embodiment of FIG 5 A;
[00015] FIG 6 A shows a plan view of a baffle assembly for a plasma processing system
according to an embodiment of the present invention;
[00016] FIG 6B shows a cross sectional view of a baffle assembly for a plasma
processing system according to the embodiment of FIG. 6 A;
[00017] FIG 6C shows a cross sectional view of a baffle assembly for a plasma
processing system according to an alternative embodiment to FIG 6B; and
[00018] FIG 7 presents a method of maintenance of a plasma processing system
according to an embodiment of the present invention.
DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS
[00019] According to an embodiment of the present invention, a plasma processing
system 1 depicted in FIG 1 comprises a plasma processing chamber 10, an upper
assembly 20 for covering the plasma processing chamber, an upper electrode 22 coupled
to the upper assembly 20, a substrate holder 30 for supporting a substrate 35, and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced
pressure atmosphere 11 in plasma processing chamber 10. Plasma processing chamber
10 can facilitate the formation of processing plasma in process space 12 adjacent to
substrate 35. In the plasma processing system a passageway 42 is formed between the
process space 12 and the pumping duct 40. The plasma> processing system 1 can be
configured to process 200 mm substrates, 300 mm substrates, or substrates of any size.
[00020] In the illustrated embodiment, upper electrode 22 comprises an electrode plate
24 with a deposition shield 26. In an alternate embodiment, upper assembly 20 can
comprise a cover, a gas injection assembly, or an upper electrode impedance match
network, or any combination of two or more thereof. For example, the upper electrode
22 can be coupled to an RF source. In another alternate embodiment, the upper
assembly 20 comprises a cover coupled to the upper electrode 22, wherein the upper
electrode 22 is maintained at an electrical potential equivalent to that of the plasma
processing chamber 10. For example, the plasma processing chamber 10, the upper
assembly 20, and the upper electrode 22 can be electrically connected to ground
potential.
[00021] Plasma processing chamber 10 can further comprise an optical viewport 16
coupled to the deposition shield 26 of upper electrode 22. Optical viewport 16 can permit monitoring of optical emission from the processing plasma in process space 12.
[00022] Chuck assembly 30 for holding substrate 35 can further comprise a vertical
translational device 50 surrounded by a bellows 52 coupled to the chuck assembly 30
and the plasma processing chamber 10, and configured to seal the vertical translational
device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10.
Additionally, a bellows shield 54 can be coupled to the chuck assembly 30 and
configured to protect the bellows 52 from the processing plasma.
£00023] The plasma processing system 1 further comprises a focus ring 60, a shield ring
62, and a baffle assembly 100.
[00024] Referring now to an illustrated embodiment of the present invention depicted in
FIG. 2 A, the baffle assembly 100 comprises a baffle carrier 110 that can be attached to
the chuck assembly 30 or to the processing chamber 10 and at least two baffle inserts
120. The embodiment of the baffle assembly 100 shown in FIG 2 A comprises nine
baffle inserts 120. Of course, any number of baffle inserts 120 may be employed.
[00025] The baffle inserts 120 can be disc-shaped. All the baffle inserts 120 can have
the same shape, making baffle inserts 120 exchangeable.
[00026] The baffle inserts 120 comprises a plurality of passages 122 therethrough in
order to permit gas in the process space 12 to be removed by the vacuum pump. Various shapes and geometries can be utilized for the passages 122 as shown in FIGs.
2B, 2C, 2D, or 2E. Referring now to FIG. 2B, each passage 122 can have a slot shape
and extend radially. As shown in FIG 2C, each passage 122 can have a round shape.
Although the passages can be formed in any different distribution, the illustrated
passages 122 'have a higher density near the chuck assembly 30 than away from the
chuck assembly 30. Referring FIG 2D, each passage 122 can have a jagged shape.
FIG. 2E illustrates that passages 122 can have letter shapes. In the embodiment "T",
"E", and "L" shapes are used. Of course, any open polygon shape including letters or
characters of any language can be used.
[00027] The baffle carrier 110, as depicted FIG 2 A, is formed into a ring surrounding
the chuck assembly 30 and can be secured to the chuck assembly 30 with, for example,
threaded hardware (not shown). The baffle carrier 110 comprises holes 112
corresponding to the baffle inserts 120. In the embodiment each hole 112 can be
formed into a round shape having a diameter smaller than a diameter of the baffle insert
120. Thus the holes 112 do not permit the baffle insert 120 to pass therethrough.
Flanges 114 can be formed at the rims of the holes 112. The flanges 114 can have
upper surfaces lower than the upper surface of the baffle carrier 110, enabling the baffle
inserts 120 to rest thereon. The baffle inserts 120 can be attached to baffle carrier 110 or the baffle inserts 120 can merely lie on baffle carrier 110.
[00028] Another embodiment of the present invention is illustrated in FIG 3. In the
embodiment a baffle assembly 100 has eight baffle inserts 120 but can have at least two
baffle inserts. The baffle inserts 120 can be distributed to adjoin each other and
substantially cover the passageway 42. The baffle inserts 120 comprise small passages
122 therethrough. Although passages 122 are round in the illustrated embodiment, the
passages 122 can be placed into any kind of disposition and be formed in any shape,
such as, for example, those shapes shown in FIG. 2B, 2C, 2D, or 2E. The baffle inserts
120 can be formed into the same fan shape, enabling them to be exchanged with each
other. Thus the baffle inserts 120 function as exchangeable modular parts.
[00029] The baffle assembly 100 comprises a baffle carrier 110 for supporting the
baffle inserts 120. The baffle carrier 110 defines holes 112 corresponding to the baffle
inserts 120. The holes 112 have a similar shape as the baffle inserts 120 and can be
formed smaller than the baffle inserts 120 so that the periphery of the baffle inserts 120
can be supported by the baffle carrier 110. In this embodiment the baffle inserts 120
lie on the baffle carrier 100 and are not secured to any part of the plasma processing
system 1. Alternatively, baffle inserts 120 can be fastened to baffle carrier 100.
[00030] Another embodiment of the present invention is illustrated in FIGs. 4A and 4B. The baffle assembly 100 comprises a baffle carrier 110 and baffle inserts 120. The
baffle carrier 110 comprises baffle carrier ring 116 surrounding the chuck assembly 30,
and baffle carrier supports 118 mounted to the, baffle carrier ring 116. In the illustrated
embodiment the baffle carrier 110 has eight baffle carrier supports 118, but any number
of baffle carrier supports can be chosen for supporting a corresponding number of baffle
inserts 120. The baffle inserts 120 comprise small passages 122 therethrough.
Although the baffle inserts 120 comprise round shape passages 122 in the illustrated
embodiment, the passages 122 can be placed into any kind of disposition and be formed
in any shape, such as, for example, those shapes shown in FIG 2B, 2C, 2D, or 2E.
[00031] As shown FIG 4B, the baffle carrier supports 118 can be secured to the baffle
carrier ring 116 attached to the chuck assembly 30. Specifically, the baffle carrier
supports comprise tabs 118A on the first ends 118D and the tabs 118A can be attached
to the baffle carrier ring 116 with mounting hardware 118B. The baffle carrier
supports 118 have small projections, 118C above the second ends 118E thereof so that
the baffle inserts 120 can be positioned on the baffle carrier supports 118. Further, a
small indent 116A can be formed on the top of the baffle carrier ring 116 to position the
baffle inserts between the projections 118C and the indent 116A. The baffle carrier
supports 118 can be placed substantially horizontally. Thus the baffle inserts 120 can be kept substantially horizontal. On the other hand, the baffle carrier supports 118 are
placed can be positioned at angles other than horizontal. For example, as shown in
FIG. 4C, the baffle carrier supports 118 can be inclined relative to horizontal.
Specifically, the second ends 118E of the baffle carrier supports 118 depicted in FIG 4C
are positioned higher than the first ends 118D. Thus the baffle inserts 120 are
positioned at an incline.
[00032] Another embodiment of the present invention is illustrated in FIGs. 5 A and 5B.
In this embodiment, the baffle assembly 100 comprises baffle inserts 120 substantially
screening the passageway 42, and a baffle carrier 110 for supporting the baffle inserts
120. The baffle inserts 120 can be formed into the same fan shape, enabling them to
be exchanged with each other. Thus the baffle inserts 120 function as exchangeable
modular parts. The baffle inserts 120 comprise small passages 122 therethrough.
Although the baffle inserts 120 comprise round shape passages 122 in the illustrated
embodiment, the passages 122 can be placed into any kind of disposition and be formed
into any shape, such as, for example, those shapes shown in FIG 2B, 2C, 2D, or 2E.
[00033] Baffle carrier 110 comprises a baffle carrier ring 116 secured to the chuck
assembly 30. In the embodiment shown in FIG. 5B the baffle carrier 110 consists of a
baffle carrier ring 116 surrounding the chuck assembly 30. The baffle carrier ring 116 defines a retaining slit 116B comprising an opening extending downwardly from the top
surface of the baffle carrier ring 116.
[00034] The baffle inserts 120 have baffle tabs 124 which can be inserted into the
retaining slit 116B to support the baffle inserts 120. The shape of baffle tabs 124 can
be formed to be readily inserted into the retaining slit 116B and be readily removed
from the retaining slit 116B.
[00035] Another embodiment of the present invention is illustrated in FIG 6 A and 6B.
In this embodiment the baffle assembly 100 comprises baffle inserts 120 substantially
screening the passageway 42, and a baffle carrier 110 for supporting the baffle inserts
120. The baffle inserts 120 are formed into the same shape, enabling them to be
exchanged each other. Thus the baffle inserts 120 function as exchangeable modular
parts. The baffle inserts 120 comprise small passages 122 therethrough. Although
the baffle inserts 120 comprise round shape passages 122 in the embodiment, the
passages 122 can be placed into any kind of disposition and be formed into any kind of
shapes, such as, for example, those shapes shown in FIG 2B, 2C, 2D, or 2E. ^
[00036] The baffle carrier 110 can comprise a first baffle carrier ring 116 surrounding
the chuck assembly 30, a second baffle carrier 117 positioned adjacent to the inside of
the side wall of the chamber 10, and support rods 119 located between the first baffle carrier ring 116 and the second baffle carrier ring 117. The first baffle carrier ring 116
can be secured to the chuck assembly 30. Alternatively, or in addition, the second
baffle carrier ring 117 can be attached to the chamber 10. First ends 119A of the
support rods 119 are coupled to the first baffle carrier ring 116 with first mounting
hardware 119B. The second baffle ring 117 can be secured to the second ends 119C of
the support rods 119 with second mounting hardware 119D. The first baffle carrier
ring 116 and the second baffle carrier ring 117 can be at substantially the same height so
that the baffle inserts 120 can be horizontally supported by the first baffle carrier ring
116 and the second baffle carrier ring 117. Alternatively, the second baffle carrier ring
117 can be at a different height than first baffle carrier ring 116 so that baffle inserts 120
are at an angle. A first indent 116A is formed on the top surface of the first baffle
carrier ring 116 and a second indent 117A corresponding to the first indent 116A is
formed on the top surface of the second baffle carrier ring 117. The baffle inserts 120
can be positioned between the first indent 116 A and the second indent 117 A.
[00037] The baffle inserts 120 can be supported by any different structure. FIG 6C
illustrates support rods 119 having a U-shape portion on the end thereof. The first
baffle carrier ring 116 comprises tunnel holes 116C extend horizontally. The first ends
119 A of the support rods 119 are fitted in the tunnel holes 116C securely and the support rods are held horizontally or at any other angle. The second baffle carrier ring 117
comprises tube holes or slots 117B extending vertically. The second end 119B of the
support rods 119 are formed in U-shape, and the tip of the second ends 119B are fitted
in the tube holes or slots 117B. A first indent 116A is formed on the top surface of the
first baffle carrier ring 116 and a second indent 117A corresponding to the first indent
116A is formed on the top surface of the second baffle carrier ring 117. The baffle
inserts 120 can be positioned between the first indent 116A and the second indent 117A.
[00038] FIG. 7 presents the method of maintenance of a plasma processing system
described in FIGs. 1-6C according to an embodiment of the present invention. Flow
diagram 200 begins at 210 in which the baffle carrier 110 is attached to the plasma
processing system 1. For example, the baffle carrier 110 can be attached to the chuck
assembly 30 in the plasma processing system 1.
[00039] At 220, the baffle inserts 120 are installed on the baffle carrier 110. The
baffle inserts 120 need not be secured to any part of the plasma processing system 1.
[00040] After the baffle assembly 100 comprising the baffle carrier 110 and baffle
inserts 120 are installed to the plasma processing system 1, the plasma processing
system 1 is operated at 230. After some period of use, the baffle assembly should be
replaced or cleaned periodically. [00041] At 240, when maintenance of the plasma processing system 1 is required, the
plasma processing system 1 is deactivated. At 250, the baffle inserts 120 are removed
from the plasma processing system 1. Since the baffle inserts 120 can merely lie on
the baffle carrier 110, maintenance personnel do not need to disassemble other parts in
the plasma processing system 1 and can easily remove the baffle inserts 120 from the
plasma processing system 1.
[000421 At 260, the removed baffle inserts 120 are cleaned. If one or more of the
baffle inserts 120 cannot be cleaned, they can be exchanged for new baffle insert(s) 120.
Alternatively, all the removed baffle inserts 120 can be exchanged for new baffle inserts
120 (as shown at 360).
[00043] At 270, the cleaned baffle inserts 120 are replaced in the plasma processing
system 1. Specifically, the cleaned baffle inserts 120 can be installed on the baffle
carrier 110. In the case where one or more of the baffle inserts are exchanged to new
baffle insert(s), the new baffle insert(s) are installed to the plasma processing system 1.
Further, all of the baffle inserts are exchanged with other baffle insert(s), the other baffle
insert(s) are installed to the plasma processing system 1 (as shown at 370). At 270 and
370, maintenance personnel may not need to secure the baffle inserts to any part of the
plasma processing system 1. [00044] Although only certain exemplary embodiments of this invention have been
described in detail above, those skilled in the art will readily appreciate that many
modifications are possible in the exemplary embodiments without materially departing
from the novel teachings and advantages of this invention. Accordingly, all such
modifications are intended to be included within the scope of this invention. r

Claims

What is claimed is:
1. A baffle assembly located in a plasma processing system having a chuck
assembly for holding a substrate, comprising:
a baffle carrier attached to the plasma processing system; and
at least two baffle inserts having a plurality of passages therethrough, the at least
two baffle inserts being supported by the baffle carrier.
2. The baffle assembly as recited in claim 1, wherein the at least two baffle
inserts are not secured to any part of the plasma processing system.
3. The bafflev assembly as recited in claim 1, wherein the at least two baffle
inserts have the same shape.
4. The baffle assembly as recited in claim 1, wherein each of the at least two
baffle inserts are adjacent to each other.
5. The baffle assembly as recited in claim 1, wherein the at least two baffle
inserts have a disk shape.
6. The baffle assembly, as recited in claim 1, wherein the plasma processing
system includes a passageway for gas, and the at least two baffle inserts cover
substantially the entire passageway.
7. The baffle assembly as recited in claim 1, wherein the baffle carrier comprises a baffle carrier ring attached to the chuck assembly and baffle carrier supports secured
to the baffle carrier ring, and edges of the at least two baffle inserts are supported by the
baffle carrier supports.
8. The baffle assembly as recited in claim 1, wherein the baffle carrier comprises
a baffle carrier ring attached to the plasma processing system and having a slot, and
each of the at least two baffle inserts further comprises a tab inserted into the slot.
9. The baffle assembly as recited in claim 1, wherein the baffle carrier comprises
a first baffle carrier ring attached to the plasma processing system, support rods having
first ends secured to the baffle carrier ring, and a second baffle carrier ring secured to
the second ends of said support rods, the at least two baffle inserts resting on at least the
baffle carrier ring and the second baffle carrier ring.
10. The baffle assembly as recited in claim 1, wherein the baffle inserts are
substantially horizontal.
11. The baffle assembly as recited in claim 1, wherein the baffle inserts are
inclined relative to horizontal.
12. A plasma processing system comprising:
a processing chamber;
a chuck assembly disposed in said chamber for holding a substrate; and a baffle assembly located in the processing chamber, wherein said baffle
assembly comprises a baffle carrier attached to the plasma processing system, and at
least two baffle inserts having a plurality of passages therethrough, the at least two
baffle inserts being supported by the baffle carrier.
13. The plasma processing system as recited in claim 12, wherein the at least
two baffle inserts are not secured to any part of the plasma processing system.
14. The plasma processing system as recited in claim 12, wherein the at least
two baffle inserts have the same shape.
15. The plasma processing system as recited in claim 12, wherein each of the at
least two baffle inserts are adjacent to each other.
16. The plasma processing system as recited in claim 12, wherein the at least
two baffle inserts have a disk shape.
17. The plasma processing system as recited in claim 12, wherein the plasma
processing system includes a passageway for gas, and the at least two baffle inserts
cover substantially the entire passageway.
18. The plasma processing system as recited in claim 12, wherein the baffle
carrier comprises a baffle carrier ring attached to the chuck assembly and baffle carrier
supports secured to the baffle carrier ring, and edges of the at least two baffle inserts are supported by the baffle carrier supports.
19. The plasma processing system as recited in claim 12, wherein the baffle
carrier comprises a baffle carrier ring attached to the plasma processing system and
having a slot, and the each of at least two baffle inserts further comprises a tab inserted
into the slot.
20. The plasma processing system as recited in claim 12, wherein the baffle
carrier comprises a first baffle carrier ring attached to the plasma processing system,
support rods having first ends secured to the baffle carrier ring, and a second baffle
carrier ring secured to the second ends of said support rods, the at least two baffle
inserts resting on at least the baffle carrier ring and the second baffle carrier ring.
21. The plasma processing system as recited in claim 12, wherein the baffle
inserts are substantially horizontal.
22. The plasma processing system as recited in claim 12, wherein the baffle
inserts are inclined relative to horizontal.
23. The plasma processing system as recited in claim 12, wherein the baffle
carrier is coupled to the chuck assembly.
24. A method of maintaining a plasma processing system having a chuck
assembly for holding a substrate, said method comprising: deactivating said plasma processing system having a baffle assembly therein, the
baffle assembly comprises a baffle carrier attached to said plasma processing system,
and at least two baffle inserts having a plurality of passages therethrough and being
supported by the baffle carrier;
removing said at least two baffle inserts from the plasma processing system
without removing the baffle carrier;
cleaning the at least two baffle inserts; and
replacing the cleaned at least two baffle inserts on the baffle carrier.
25. A method of maintaining a plasma processing system as recited in claim 24,
wherein the at least two baffle inserts are not secured to any part of the plasma
processing system.
26. A method of maintaining a plasma processing system having a chuck
assembly for holding a substrate, said method comprising:
deactivating a plasma processing system having a baffle assembly therein, the
baffle assembly comprises a baffle carrier attached to said plasma processing system,
and at least two baffle inserts having a plurality of passages therethrough and being
supported by the baffle carrier;
removing said at least two baffle inserts from the plasma processing system without removing the baffle carrier; and
placing at least two other baffle inserts onto the baffle carrier instead of
replacing the removed at least two baffle inserts.
27. A method of maintenance of a plasma processing system as recited in
claim 26, wherein the at least two baffle inserts are not secured to any part of the plasma
processing system.
PCT/US2006/000591 2005-01-11 2006-01-10 Plasma processing system and baffle assembly for use in plasma processing system Ceased WO2006076253A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/032,101 US7601242B2 (en) 2005-01-11 2005-01-11 Plasma processing system and baffle assembly for use in plasma processing system
US11/032,101 2005-01-11

Publications (2)

Publication Number Publication Date
WO2006076253A2 true WO2006076253A2 (en) 2006-07-20
WO2006076253A3 WO2006076253A3 (en) 2007-11-15

Family

ID=36652078

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/000591 Ceased WO2006076253A2 (en) 2005-01-11 2006-01-10 Plasma processing system and baffle assembly for use in plasma processing system

Country Status (3)

Country Link
US (1) US7601242B2 (en)
TW (1) TW200710984A (en)
WO (1) WO2006076253A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030090305A (en) * 2002-05-22 2003-11-28 동경엘렉트론코리아(주) Exhaust baffle plate for plasma discharge device
US6844260B2 (en) * 2003-01-30 2005-01-18 Micron Technology, Inc. Insitu post atomic layer deposition destruction of active species
US6921437B1 (en) * 2003-05-30 2005-07-26 Aviza Technology, Inc. Gas distribution system
US20050103267A1 (en) * 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
WO2007016592A2 (en) * 2005-07-29 2007-02-08 Aviza Technology, Inc. Gas manifold valve cluster
JP2009200184A (en) * 2008-02-20 2009-09-03 Tokyo Electron Ltd Plasma processing apparatus, and baffle plate of plasma processing apparatus
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
JP5102706B2 (en) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 Baffle plate and substrate processing apparatus
JP5302813B2 (en) * 2009-07-28 2013-10-02 東京エレクトロン株式会社 Deposit control cover and plasma processing apparatus
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
JP5885830B2 (en) * 2011-04-07 2016-03-16 ピコサン オーワイPicosun Oy Deposition reactor with plasma source
KR101814013B1 (en) * 2011-05-09 2018-01-03 삼성디스플레이 주식회사 Plasma device
CN103377979B (en) * 2012-04-30 2016-06-08 细美事有限公司 Adjustable plate and the device for the treatment of substrate with this adjustable plate
US10316409B2 (en) * 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US10669625B2 (en) * 2013-03-15 2020-06-02 Taiwan Semiconductor Manufacturing Company Limited Pumping liner for chemical vapor deposition
TWI727024B (en) 2016-04-15 2021-05-11 美商應用材料股份有限公司 Micro-volume deposition chamber
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR102449621B1 (en) * 2017-08-22 2022-09-30 삼성전자주식회사 Shroud unit and substrate processing apparatus including same
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
WO2019113478A1 (en) 2017-12-08 2019-06-13 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
JP7186032B2 (en) * 2018-07-27 2022-12-08 東京エレクトロン株式会社 Film forming apparatus and film forming method
CN208835019U (en) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 A reaction chamber lining
CN112352302A (en) * 2019-01-25 2021-02-09 玛特森技术公司 Post plasma gas injection in barrier
US11685994B2 (en) * 2019-09-13 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. CVD device pumping liner
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
WO2022173557A1 (en) * 2021-02-12 2022-08-18 Lam Research Corporation C-shroud modification for plasma uniformity without impacting mechanical strength or lifetime of the c-shroud
US20250051907A1 (en) * 2023-08-09 2025-02-13 Sky Tech Inc. Particle prevention method in chamber
US20250062139A1 (en) * 2023-08-17 2025-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Furnace inner tube for process uniformity

Family Cites Families (274)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310390A (en) * 1977-08-10 1982-01-12 Lockheed Corporation Protective coating process for aluminum and aluminum alloys
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4263088A (en) * 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
JPS5623745A (en) 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4270999A (en) 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4297162A (en) 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
JPS63450Y2 (en) 1980-03-26 1988-01-07
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
US4357387A (en) 1981-08-20 1982-11-02 Subtex, Inc. Flame resistant insulating fabric compositions prepared by plasma spraying
JPS5857491A (en) 1981-09-30 1983-04-05 Sony Corp Method for manufacturing green phosphor
JPS59159510A (en) 1983-03-01 1984-09-10 Canon Inc magneto-optical recording medium
JPS59186325U (en) 1983-05-30 1984-12-11 松下電工株式会社 daylight window
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4534816A (en) 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
JPH065155B2 (en) * 1984-10-12 1994-01-19 住友金属工業株式会社 Furnace wall repair device for kiln
US4593007A (en) 1984-12-06 1986-06-03 The Perkin-Elmer Corporation Aluminum and silica clad refractory oxide thermal spray powder
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61207566A (en) 1985-03-12 1986-09-13 Showa Denko Kk Ceramic thermal spray coating formation method
US4612077A (en) 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPS6267161U (en) 1985-10-15 1987-04-25
JPH0611346Y2 (en) 1986-06-30 1994-03-23 不二サッシ株式会社 Opening / closing device for sliding doors inside / outside windows
US4985102A (en) * 1986-07-17 1991-01-15 Du Pont Canada Inc. Method of making fiber reinforced polyamide sheets
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4842683A (en) 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4877757A (en) 1987-07-16 1989-10-31 Texas Instruments Incorporated Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH0423551Y2 (en) 1987-09-04 1992-06-02
JPH0741153Y2 (en) * 1987-10-26 1995-09-20 東京応化工業株式会社 Sample processing electrode
JPH01120328A (en) 1987-11-04 1989-05-12 Koichi Sato Pressure molding machine
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
NO163412B (en) 1988-01-25 1990-02-12 Elkem Technology The plasma torch.
JPH0730468B2 (en) 1988-06-09 1995-04-05 日電アネルバ株式会社 Dry etching equipment
JPH0657396B2 (en) 1989-02-17 1994-08-03 レンゴー株式会社 Rotary shear control method and device
JPH02267967A (en) 1989-04-07 1990-11-01 Fuji Electric Co Ltd Manufacture of semiconductor element
US5429070A (en) 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5134965A (en) 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
EP0407945B1 (en) 1989-07-11 1995-01-04 Sony Corporation Method of heat-treating an oxide optical crystal and a heat treatment apparatus for carrying out the same
JPH0758013B2 (en) 1989-07-19 1995-06-21 日立造船株式会社 Chimney dismantling device
US5334462A (en) 1989-09-08 1994-08-02 United Technologies Corporation Ceramic material and insulating coating made thereof
JPH03115535A (en) 1989-09-28 1991-05-16 Nippon Mining Co Ltd Method for decreasing oxygen in rare earth metal
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5126102A (en) 1990-03-15 1992-06-30 Kabushiki Kaisha Toshiba Fabricating method of composite material
GB2242443B (en) * 1990-03-28 1994-04-06 Nisshin Flour Milling Co Coated particles of inorganic or metallic materials and processes of producing the same
US5180467A (en) * 1990-08-08 1993-01-19 Vlsi Technology, Inc. Etching system having simplified diffuser element removal
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH04238882A (en) 1991-01-10 1992-08-26 Denki Kagaku Kogyo Kk High-temperature insulated article
DE4103994A1 (en) 1991-02-11 1992-08-13 Inst Elektroswarki Patona PROTECTIVE COVER OF THE METAL-CERAMIC TYPE FOR ITEMS OF HEAT-RESISTANT ALLOYS
JPH05117064A (en) 1991-04-09 1993-05-14 Tokyo Electric Power Co Inc:The Blade for gas turbine and its production
EP0508731B1 (en) 1991-04-09 1996-09-18 The Tokyo Electric Power Co., Inc. Use of an oxide coating to enhance the resistance to oxidation and corrosion of a silicon nitride based gas turbine blade
JPH05121360A (en) 1991-04-22 1993-05-18 Tokyo Electron Yamanashi Kk Semiconductor processor
JPH05198532A (en) 1992-01-22 1993-08-06 Hitachi Chem Co Ltd Electrode plate for plasma etching device
JPH05238859A (en) 1992-02-28 1993-09-17 Tokyo Electric Power Co Inc:The Coated member of ceramic
JPH05238855A (en) 1992-02-28 1993-09-17 Tokyo Electric Power Co Inc:The Production of ceramic coating member
CA2097222A1 (en) 1992-06-01 1993-12-02 Somyong Visaisouk Particle blasting utilizing crystalline ice
JPH06224137A (en) 1992-06-05 1994-08-12 Applied Materials Inc Integrated circuit structure processor having chemical corrosion resistant aluminum oxide protective film on surface of its quartz window which is in contact with corrosive chemical substance
KR100276093B1 (en) * 1992-10-19 2000-12-15 히가시 데쓰로 Plasma etching system
JPH06136505A (en) 1992-10-26 1994-05-17 Sumitomo Metal Ind Ltd Sprayed coating structure
JPH06142822A (en) 1992-11-09 1994-05-24 Kawasaki Steel Corp Method for manufacturing high melting point active metal casting mold
JPH06196548A (en) 1992-12-24 1994-07-15 Sumitomo Metal Ind Ltd Electrostatic chuck
WO1994014878A1 (en) * 1992-12-28 1994-07-07 Nippon Zeon Co., Ltd. Molding with hard-coating layer and process for producing the same
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
JPH06256926A (en) 1993-03-08 1994-09-13 Mitsubishi Heavy Ind Ltd Coating film for heat shielding
US5362335A (en) 1993-03-25 1994-11-08 General Motors Corporation Rare earth coating process for aluminum alloys
KR100324792B1 (en) 1993-03-31 2002-06-20 히가시 데쓰로 Plasma processing apparatus
JP3236398B2 (en) 1993-04-02 2001-12-10 株式会社フジクラ Thermal spray equipment
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5891253A (en) * 1993-05-14 1999-04-06 Applied Materials, Inc. Corrosion resistant apparatus
US5551190A (en) 1993-05-19 1996-09-03 Ohi Seisakusho Co., Ltd. Slide door driving system
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
JPH07126827A (en) 1993-10-28 1995-05-16 Nippon Alum Co Ltd Composite film of metallic surface and its formation
JP3228644B2 (en) 1993-11-05 2001-11-12 東京エレクトロン株式会社 Material for vacuum processing apparatus and method for producing the same
US5484752A (en) * 1993-11-12 1996-01-16 Ube Industries, Ltd. Ceramic composite material
US5472565A (en) 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
JP3308091B2 (en) * 1994-02-03 2002-07-29 東京エレクトロン株式会社 Surface treatment method and plasma treatment device
JPH07226378A (en) 1994-02-10 1995-08-22 Sony Corp Film forming method and plasma device used therefor
JP3061346B2 (en) 1994-03-07 2000-07-10 東京エレクトロン株式会社 Processing equipment
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5651723A (en) 1994-04-13 1997-07-29 Viratec Thin Films, Inc. Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings
US5521790A (en) * 1994-05-12 1996-05-28 International Business Machines Corporation Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization
EP0760526A4 (en) * 1994-05-17 2001-01-10 Hitachi Ltd PLASMA TREATMENT DEVICE AND METHOD
US5411568A (en) * 1994-05-25 1995-05-02 Harmony Products Inc. Highly available waste based nitrogen fertilizer
JPH0841309A (en) 1994-07-28 1996-02-13 Hoechst Japan Ltd Polybenzimidazole-based resin articles for dry etching equipment
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
DE9421671U1 (en) 1994-08-26 1996-07-11 Siemens AG, 80333 München Discharge chamber for a plasma etching system in semiconductor production
JP3473121B2 (en) 1994-09-14 2003-12-02 ソニー株式会社 Plasma CVD apparatus and plasma CVD method
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
DE69603627T2 (en) * 1995-01-19 1999-12-30 Ube Industries, Ltd. Ceramic composite body
JP3778299B2 (en) * 1995-02-07 2006-05-24 東京エレクトロン株式会社 Plasma etching method
US5759360A (en) 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
JP3420377B2 (en) 1995-03-29 2003-06-23 京セラ株式会社 Method for producing yttrium-aluminum-garnet sintered body
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5534356A (en) 1995-04-26 1996-07-09 Olin Corporation Anodized aluminum substrate having increased breakdown voltage
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
JPH08339895A (en) 1995-06-12 1996-12-24 Tokyo Electron Ltd Plasma processing device
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
JP3208044B2 (en) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
TW323387B (en) 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP3164200B2 (en) 1995-06-15 2001-05-08 住友金属工業株式会社 Microwave plasma processing equipment
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
DE19529627C1 (en) 1995-08-11 1997-01-16 Siemens Ag Thermally conductive, electrically insulating connection and method for its production
JP2971369B2 (en) 1995-08-31 1999-11-02 トーカロ株式会社 Electrostatic chuck member and method of manufacturing the same
EP0777258A3 (en) * 1995-11-29 1997-09-17 Applied Materials Inc Self-cleaning plasma reactor
US5894887A (en) * 1995-11-30 1999-04-20 Applied Materials, Inc. Ceramic dome temperature control using heat pipe structure and method
US6373573B1 (en) * 2000-03-13 2002-04-16 Lj Laboratories L.L.C. Apparatus for measuring optical characteristics of a substrate and pigments applied thereto
US5985102A (en) 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
JP4226669B2 (en) 1996-02-05 2009-02-18 株式会社東芝 Heat resistant material
US5955182A (en) 1996-02-05 1999-09-21 Kabushiki Kaisha Toshiba Heat resisting member and its production method
JP3035209B2 (en) 1996-02-27 2000-04-24 三菱重工業株式会社 Corrosion resistant material and method for producing the same
JPH09235662A (en) 1996-02-28 1997-09-09 Nittetsu Hard Kk Formation of thermally sprayed coating
UA17473A (en) 1996-04-04 1997-05-06 Міжнародний Центр Електронно-Променевих Технологій Інституту Електрозварювання Ім. Є.О. Патона Нан України METHOD FOR OBTAINING A PROTECTIVE COATING ON A SUBSTRATE WITH A GRADIENT OF CHEMICAL COMPOSITION AND STRUCTURE OVER THE THICKNESS WITH AN EXTERNAL CERAMIC LAYER
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
JP3360265B2 (en) * 1996-04-26 2002-12-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
CA2205817C (en) 1996-05-24 2004-04-06 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
US5892278A (en) * 1996-05-24 1999-04-06 Dai Nippon Printingco., Ltd. Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same
JP3050124B2 (en) 1996-05-27 2000-06-12 住友金属工業株式会社 Plasma processing equipment
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5952060A (en) 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
JPH104083A (en) 1996-06-17 1998-01-06 Kyocera Corp Corrosion resistant materials for semiconductor manufacturing
JP3241270B2 (en) 1996-06-25 2001-12-25 日本政策投資銀行 Thermoelectric converter
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5885402A (en) * 1996-07-17 1999-03-23 Applied Materials Diagnostic head assembly for plasma chamber
EP0821395A3 (en) 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
JP3261044B2 (en) 1996-07-31 2002-02-25 京セラ株式会社 Components for plasma processing equipment
JP3619330B2 (en) 1996-07-31 2005-02-09 京セラ株式会社 Components for plasma process equipment
US5882411A (en) * 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
JPH10130884A (en) 1996-10-25 1998-05-19 Nagayama Kogyosho:Kk Treatment of heat resistant anodically oxidized coating
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US6301004B1 (en) 2000-05-31 2001-10-09 Lj Laboratories, L.L.C. Apparatus and method for measuring optical characteristics of an object
US5925228A (en) 1997-01-09 1999-07-20 Sandia Corporation Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material
JPH10214819A (en) 1997-01-28 1998-08-11 Sumitomo Metal Ind Ltd Electrode plate for plasma etching
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
JPH10226869A (en) 1997-02-17 1998-08-25 Mitsui Eng & Shipbuild Co Ltd Plasma spraying method
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
JPH111757A (en) 1997-04-14 1999-01-06 Toshiba Ceramics Co Ltd Jig for burning in nonoxidizing atmosphere
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US5851343A (en) 1997-05-16 1998-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Protective shield around the inner edge of endpoint window in a plasma etching chamber
US5994662A (en) 1997-05-29 1999-11-30 Applied Materials, Inc. Unique baffle to deflect remote plasma clean gases
US6143646A (en) 1997-06-03 2000-11-07 Motorola Inc. Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation
JP3707229B2 (en) 1997-06-27 2005-10-19 コニカミノルタビジネステクノロジーズ株式会社 Electrophotographic photosensitive member and electrophotographic image forming apparatus using the same
JP3362113B2 (en) 1997-07-15 2003-01-07 日本碍子株式会社 Corrosion-resistant member, wafer mounting member, and method of manufacturing corrosion-resistant member
JPH1136076A (en) * 1997-07-16 1999-02-09 Tokyo Electron Ltd CVD film forming apparatus and CVD film forming method
US6161500A (en) * 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US20020011215A1 (en) * 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
KR100258984B1 (en) 1997-12-24 2000-08-01 윤종용 Dry etching apparatus
JPH11207161A (en) 1998-01-22 1999-08-03 Konica Corp Solid processing agent dissolution equipment
JP3350433B2 (en) 1998-02-16 2002-11-25 シャープ株式会社 Plasma processing equipment
JP4217299B2 (en) 1998-03-06 2009-01-28 東京エレクトロン株式会社 Processing equipment
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
ATE345577T1 (en) 1998-03-31 2006-12-15 Lam Res Corp PLASMA PROCESSING CHAMBER AND METHOD FOR CONTROLLING IMPURITIES
KR100265288B1 (en) * 1998-04-22 2000-10-02 윤종용 Baffle of etching equipment for fabricating semiconductor device
JP3555442B2 (en) 1998-04-24 2004-08-18 住友金属工業株式会社 Alumina ceramic material excellent in plasma corrosion resistance and method for producing the same
JP4037956B2 (en) 1998-04-28 2008-01-23 東海カーボン株式会社 Chamber inner wall protection member
JP3810039B2 (en) 1998-05-06 2006-08-16 キヤノン株式会社 Stage equipment
EP1083219B1 (en) 1998-05-26 2006-08-30 Tokyo Electron Limited Cleaning fluid and cleaning method for component of semiconductor-treating apparatus
US6246479B1 (en) 1998-06-08 2001-06-12 Lj Laboratories, L.L.C. Integrated spectrometer assembly and methods
US6335293B1 (en) * 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6123791A (en) 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6389506B1 (en) 1998-08-07 2002-05-14 Cisco Technology, Inc. Block mask ternary cam
JP4162773B2 (en) 1998-08-31 2008-10-08 東京エレクトロン株式会社 Plasma processing apparatus and detection window
KR100292410B1 (en) * 1998-09-23 2001-06-01 윤종용 Process chamber for reducing particulate contamination for manufacturing semiconductor device
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
JP3030287B1 (en) 1998-10-09 2000-04-10 株式会社協同インターナショナル Method for cleaning film forming apparatus, method for cleaning sputtering target, and cleaning apparatus used for these
JP2000124197A (en) 1998-10-16 2000-04-28 Hitachi Ltd Plasma processing equipment
US6383964B1 (en) * 1998-11-27 2002-05-07 Kyocera Corporation Ceramic member resistant to halogen-plasma corrosion
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6123804A (en) 1999-02-22 2000-09-26 Applied Materials, Inc. Sectional clamp ring
US6221202B1 (en) * 1999-04-01 2001-04-24 International Business Machines Corporation Efficient plasma containment structure
JP3911902B2 (en) * 1999-04-16 2007-05-09 東京エレクトロン株式会社 Processing apparatus and surface treatment method for metal parts
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2001023959A (en) 1999-07-05 2001-01-26 Mitsubishi Electric Corp Plasma processing equipment
JP2001031484A (en) 1999-07-22 2001-02-06 Nihon Ceratec Co Ltd Corrosion-resistant composite member
US6387817B1 (en) * 1999-09-07 2002-05-14 Agere Systems Guardian Corp. Plasma confinement shield
JP4285853B2 (en) * 1999-09-08 2009-06-24 東京エレクトロン株式会社 Processing method
US6296716B1 (en) 1999-10-01 2001-10-02 Saint-Gobain Ceramics And Plastics, Inc. Process for cleaning ceramic articles
US6364949B1 (en) * 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
US6265757B1 (en) 1999-11-09 2001-07-24 Agere Systems Guardian Corp. Forming attached features on a semiconductor substrate
JP2001152307A (en) 1999-11-29 2001-06-05 Nippon Steel Hardfacing Co Ltd Method of forming corrosion resisting combined coating standing long use, and member having the composite coating
JP3510993B2 (en) 1999-12-10 2004-03-29 トーカロ株式会社 Plasma processing container inner member and method for manufacturing the same
KR20010062209A (en) 1999-12-10 2001-07-07 히가시 데쓰로 Processing apparatus with a chamber having therein a high-etching resistant sprayed film
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6362888B1 (en) 1999-12-23 2002-03-26 Lj Laboratories, L.L.C. Spectrometer assembly
US6519037B2 (en) * 1999-12-23 2003-02-11 Lj Laboratories, Llc Spectrometer having optical unit including a randomized fiber optic implement
JP4592856B2 (en) 1999-12-24 2010-12-08 東京エレクトロン株式会社 Baffle plate and gas treatment device
JP3567855B2 (en) * 2000-01-20 2004-09-22 住友電気工業株式会社 Wafer holder for semiconductor manufacturing equipment
JP4272786B2 (en) 2000-01-21 2009-06-03 トーカロ株式会社 Electrostatic chuck member and manufacturing method thereof
DE10112889A1 (en) * 2000-03-15 2001-10-18 Preising Paul Eric Cleaning device for cleaning of surface of high voltage-carrying plant parts, has internal compressed gas generator, dry ice reservoir with dry ice particles and/or particle generator which generates dry ice particles
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6537419B1 (en) * 2000-04-26 2003-03-25 David W. Kinnard Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
JP4422295B2 (en) 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 CVD equipment
EP1167565B1 (en) * 2000-06-29 2007-03-07 Shin-Etsu Chemical Co., Ltd. Method for thermal spray coating and rare earth oxide powder used therefor
AU2001288232A1 (en) 2000-08-10 2002-02-25 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
TWI290589B (en) 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
US6413578B1 (en) 2000-10-12 2002-07-02 General Electric Company Method for repairing a thermal barrier coating and repaired coating formed thereby
JP2002151473A (en) 2000-11-13 2002-05-24 Tokyo Electron Ltd Plasma processing apparatus and method of assembling the same
GB2369206B (en) 2000-11-18 2004-11-03 Ibm Method for rebuilding meta-data in a data storage system and a data storage system
US20020090464A1 (en) 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
JP4440541B2 (en) 2000-12-12 2010-03-24 東京エレクトロン株式会社 Method for regenerating plasma processing apparatus, plasma processing apparatus, and method for regenerating member inside plasma processing container
US20040081746A1 (en) * 2000-12-12 2004-04-29 Kosuke Imafuku Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6790242B2 (en) 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6533910B2 (en) * 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US7128804B2 (en) 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6537429B2 (en) * 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6613442B2 (en) 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6627901B2 (en) 2001-01-04 2003-09-30 Nec Electronics, Inc. Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source
ATE404982T1 (en) * 2001-02-07 2008-08-15 Hitachi Metals Ltd METHOD FOR PRODUCING A METAL ALLOY FOR AN IRON-BASED RARE EARTH MAGNET
JP4676074B2 (en) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 Focus ring and plasma processing apparatus
JP2002252209A (en) 2001-02-22 2002-09-06 Tokyo Electron Ltd Plasma etching equipment
US6830622B2 (en) 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
TW541586B (en) 2001-05-25 2003-07-11 Tokyo Electron Ltd Substrate table, production method therefor and plasma treating device
KR20020095324A (en) * 2001-06-14 2002-12-26 삼성전자 주식회사 semiconductor device fabricating equipment using radio frequency energy
US6811651B2 (en) 2001-06-22 2004-11-02 Tokyo Electron Limited Gas temperature control for a plasma process
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
KR100431660B1 (en) * 2001-07-24 2004-05-17 삼성전자주식회사 Dry Etching Apparatus for Manufacturing Semiconductor Devices
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
US6849306B2 (en) 2001-08-23 2005-02-01 Konica Corporation Plasma treatment method at atmospheric pressure
US7390366B2 (en) 2001-11-05 2008-06-24 Jusung Engineering Co., Ltd. Apparatus for chemical vapor deposition
US20030092278A1 (en) 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
JP3850277B2 (en) 2001-12-03 2006-11-29 東芝セラミックス株式会社 Method for manufacturing plasma resistant member
KR100440500B1 (en) 2001-12-07 2004-07-15 주식회사 코미코 Ceramic parts production and repair for semiconductor fabrication by plasma spray process
GB2383833A (en) 2001-12-27 2003-07-09 Perkins Engines Co Ltd Piston with a ceramic reinforced ring groove
US6776873B1 (en) 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
GB2386907B (en) 2002-03-27 2005-10-26 Isle Coat Ltd Process and device for forming ceramic coatings on metals and alloys, and coatings produced by this process
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US6852433B2 (en) * 2002-07-19 2005-02-08 Shin-Etsu Chemical Co., Ltd. Rare-earth oxide thermal spray coated articles and powders for thermal spraying
KR100460143B1 (en) * 2002-08-02 2004-12-03 삼성전자주식회사 Process chamber for using semiconductor fabricating equipment
US6963043B2 (en) 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
JP3776856B2 (en) * 2002-09-13 2006-05-17 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US20040060779A1 (en) * 2002-10-01 2004-04-01 Charles Kreger Distance compensating shim for clutch/brake and method of determining same
TW200423195A (en) 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
US6894769B2 (en) 2002-12-31 2005-05-17 Tokyo Electron Limited Monitoring erosion of system components by optical emission
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
JP2004241203A (en) * 2003-02-04 2004-08-26 Hitachi High-Technologies Corp Plasma treatment chamber wall treatment method
CN100418187C (en) 2003-02-07 2008-09-10 东京毅力科创株式会社 Plasma processing apparatus, annular component and plasma processing method
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
KR100918528B1 (en) 2003-03-31 2009-09-21 도쿄엘렉트론가부시키가이샤 A method for adjoining adjacent coatings on a processing element
KR101016913B1 (en) 2003-03-31 2011-02-22 도쿄엘렉트론가부시키가이샤 Barrier layer for processing element and method of forming the same
US20040244949A1 (en) 2003-05-30 2004-12-09 Tokyo Electron Limited Temperature controlled shield ring
US20050011447A1 (en) * 2003-07-14 2005-01-20 Tokyo Electron Limited Method and apparatus for delivering process gas to a process chamber
US7064812B2 (en) * 2003-08-19 2006-06-20 Tokyo Electron Limited Method of using a sensor gas to determine erosion level of consumable system components
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring
US7461614B2 (en) 2003-11-12 2008-12-09 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7650933B2 (en) 2005-03-14 2010-01-26 Allied Engineering Company, Division Of E-Z-Rect Manufacturing Ltd. Baffle for sealed combustion chamber

Also Published As

Publication number Publication date
US7601242B2 (en) 2009-10-13
WO2006076253A3 (en) 2007-11-15
TW200710984A (en) 2007-03-16
US20060151114A1 (en) 2006-07-13

Similar Documents

Publication Publication Date Title
US7601242B2 (en) Plasma processing system and baffle assembly for use in plasma processing system
EP0637055B1 (en) Plasma processing apparatus
CN1324648C (en) Apparatus and method to confine plasma and reduce flow resistance in plasma reactor
JP4233618B2 (en) An electrically floating shield in a plasma reactor.
TWI251289B (en) Step edge insert ring for process chamber
CN201025611Y (en) Tape shielding for substrate processing chambers
KR100284571B1 (en) Apparatus and method for reducing residue buildup in CVD chamber using ceramic lining
JPH0670273B2 (en) Method and apparatus for removing deposits from the backside and edges of semiconductor wafers
JP5944883B2 (en) Particle backflow prevention member and substrate processing apparatus
JP2003243379A (en) Plasma baffle device
CN103208410A (en) Plasma processing apparatus
JP2023536546A5 (en)
JP2009510784A (en) Apparatus and removal method for removing by-products from a substrate
KR20130058312A (en) Structure for preventing from arcing between susceptor and shadow frame
JP4933692B2 (en) Reduction of ion energy
JPH10237638A (en) Back sputtering shield
CN119343739A (en) Apparatus for generating etchant for remote plasma processing
TWI902140B (en) Apparatus for processing substrate
US7335601B2 (en) Method of processing an object and method of controlling processing apparatus to prevent contamination of the object
US5763895A (en) Source inner shield for eaton NV-10 high current implanter
US20040094095A1 (en) Substrate holder assembly
KR102256691B1 (en) Apparatus and Method for treating substrate
JPH0922934A (en) Apparatus and method for focusing plasma on a substrate being processed
KR100745966B1 (en) Plasma treatment apparatus and cleaning method thereof
JP7568367B2 (en) Foreign object fall prevention member and substrate processing apparatus

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06717754

Country of ref document: EP

Kind code of ref document: A2