WO2006064111A1 - Dispositif electronique a deux composants assembles et procede de fabrication d'un tel dispositif - Google Patents
Dispositif electronique a deux composants assembles et procede de fabrication d'un tel dispositif Download PDFInfo
- Publication number
- WO2006064111A1 WO2006064111A1 PCT/FR2005/003085 FR2005003085W WO2006064111A1 WO 2006064111 A1 WO2006064111 A1 WO 2006064111A1 FR 2005003085 W FR2005003085 W FR 2005003085W WO 2006064111 A1 WO2006064111 A1 WO 2006064111A1
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- WIPO (PCT)
- Prior art keywords
- conductive
- polymer material
- component
- conductive polymer
- electronic device
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000002861 polymer material Substances 0.000 claims abstract description 53
- 229920000767 polyaniline Polymers 0.000 claims abstract description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229920001940 conductive polymer Polymers 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 12
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- 239000000463 material Substances 0.000 description 14
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- 238000001514 detection method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
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- 239000004416 thermosoftening plastic Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000925 Cd alloy Inorganic materials 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
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- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- WNKQDGLSQUASME-UHFFFAOYSA-N 4-sulfophthalic acid Chemical compound OC(=O)C1=CC=C(S(O)(=O)=O)C=C1C(O)=O WNKQDGLSQUASME-UHFFFAOYSA-N 0.000 description 1
- 229910017214 AsGa Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000645 Hg alloy Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- UWIVMLUBHUNIBC-MJSUFJGSSA-N dcaa Chemical compound Cl.CN1C2=CC=CC=C2C2([C@@H](C34)OC(=O)CCl)[C@@H]1[C@@H]1CC3[C@H](CC)[C@@H](OC(=O)CCl)N1[C@H]4C2 UWIVMLUBHUNIBC-MJSUFJGSSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000009607 mammography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Definitions
- Two-component electronic device assembled and method of manufacturing such a device
- the invention relates to an electronic device comprising at least a first component, a second component comprising conductive pads and means for fixing the two components simultaneously constituting electrical connection means between the two components.
- the invention also relates to a method of manufacturing such an electronic device.
- connection means are found to be low, especially in terms of electrical conductivity, and the manufacture of this type of device is too expensive and inapplicable to the methods used in microelectronics.
- the object of the invention is to remedy these drawbacks and to provide a device that can be applied to microelectronics and whose manufacture is simple and inexpensive.
- the device is characterized in that the fixing means comprise a polyaniline-based polymer material, made electrically conductive by doping with sulfonic acid or phosphonic acid.
- the invention also relates to a simple manufacturing method, inexpensive and applicable to methods used in microelectronics, for the realization of such a device.
- the method is characterized in that it comprises:
- Figures 1 to 5 show different successive steps of a manufacturing method of a particular embodiment of an electronic device according to the invention.
- Figure 6 is a top view of the device according to Figure 4, schematically illustrating a portion of conductive conductive polymer material formed on the first component.
- Figures 7 and 8 show two successive stages of an alternative embodiment of a method of manufacturing an electronic device according to the invention.
- FIGS. 1 to 5 illustrate various successive steps of a method of manufacturing a particular embodiment of an electronic device 1, shown in FIG. 5, intended particularly for the detection of electromagnetic radiation.
- the particular embodiment of the electronic device 1 comprises a first component, for example a photodetector 2 based on detector material, and a second component, for example a readout circuit 4, comprising conductive pads 3.
- photodetector 2 captures the electromagnetic radiation and transmits it as an electrical signal to the reading circuit 4, via the conductive pads 3, to be analyzed.
- the photodetector 2 is fixed to the reading circuit 4 by means of a plurality of conductive zones 5 of electrically conductive polymer material.
- the conductive zones 5 serve both as fixing means between the photodetector 2 and the reading circuit 4 and as electrical connection means between the photodetector 2 and the conductive pads 3 of the reading circuit 4, the conductive zones 5 being arranged in view of the conductive pads 3 and in contact only with the conductive pads 3 of the reading circuit 4.
- the conductive polymer material used for the device 1 is, for example, that described in the documents FR-A-2796379 and FR-A-2830535, namely a polymeric material based on polyaniline, for example emeraldine base.
- This polyaniline-based polymer material is intrinsically electrically conductive by doping by the addition of sulfonic acid or phosphonic acid.
- the conductive polymer material is preferably mixed with an insulating polymeric material, for example poly (methyl methacrylate) (PMMA), so as to modify its mechanical and electrical properties, in particular to adjust the electrical resistivity of the conductive polymer material connecting the photodetector 2 to the reading circuit 4.
- PMMA poly (methyl methacrylate)
- This insulating polymer material also makes it possible to modify the characteristics of the polymer material conductor, in particular its thermoplastic rheological mechanical behavior.
- a plasticizer may preferably be added to the insulating polymeric material, or solely to the electrically conductive polymer material, to adjust certain properties, including the glass transition temperature of the electrically conductive polymer material.
- the conductive zones 5 are preferably in the form of a pyramid with a square base.
- the pitch P namely the distance between two identical edges of two adjacent pyramid-shaped conductive zones (FIG. 6)
- the base b of the pyramid is, for example, of square section with a side of the order of 30 ⁇ m and with a height h of the order of
- the device 1 thus comprises a plurality of conductive zones 5, arranged regularly on the photodetector 2 and at a very short distance from each other, so as to optimize the efficiency of the detection device 1.
- the photodetector 2 is self-supported, that is to say that it constitutes on its own the first component of the device 1.
- the photodetector 2 is deposited in thick layers on a substrate transparent to the radiation to be detected, for example graphite or aluminum.
- the substrate on which the photodetector 2 is deposited is electrically conductive, since the detection device 1 must be polarized in order to extract the charges created during the detection.
- the photodetector 2 consists of a material chosen from cadmium telluride (CdTe), chlorine-doped cadmium tellurium (CdTe) (CI), an alloy of tellurium, cadmium and zinc (CdZnTe). ), an alloy of tellurium, cadmium and mercury (HgCdTe), silicon (Si), gallium arsenide (AsGa), lead oxide (PbO), lead iodide (PbI 2 ) or mercury iodide (HgI 2 ).
- the conductive pads 3 of the reading circuit 4 are, for example, connected to output pads or test pads (not shown), intended to connect the device 1 to other elements making it possible to exploit the results of the detection. .
- the conductive pads 3 of the reading circuit 4 are preferably made of a metal chosen from gold (Au), platinum (Pt), silver (Ag), copper (Cu), nickel (Ni) or aluminum (Al).
- the read circuit 4 may be silicon (Si), gallium arsenide (GaAs) or germanium (Ga).
- the reading circuit 4 can be replaced by an electrical interconnection substrate comprising the conductive pads 3 and conductive lines formed on an insulating ceramic substrate, for example alumina, co-sintered ceramic , in aluminum nitride, or on an insulating substrate made of plastic, for example polyimide, epoxy, or on a glass insulating substrate.
- the substrate may also be of silicon or may consist of a mixture of ceramic insulators, glasses and plastics.
- the first step consists in producing the photodetector 2, preferably self-supported (FIG. 1). .
- the photodetector 2 may be deposited on a substrate (not shown) transparent to the radiation to be detected and electrically conductive.
- a layer 6 of electrically conductive polymer material is deposited on the photodetector 2. The deposition is done, for example, by thin film and in a localized manner.
- the conductive polymer material deposited on the photodetector 2 may comprise solvent in its composition.
- a step of evaporation of the solvent contained in the polymeric material is then provided, preferably after the deposition of the layer 6, for a predetermined duration and, preferably, in a appropriate enclosure.
- a step of structuring the layer 6 is performed, so as to form a plurality of conductive zones 5.
- the first step of the structuring consists in forming the tips of the conductive zones 5.
- This step can be carried out by stamping or, preferably, by hot molding by means of a mold having indentations corresponding to the previously defined shape of the conductive zones 5
- the mold preferably has pyramid-shaped cavities of height h1 corresponding to the height of the tips of the pyramid-shaped conductive zones 5, as shown in FIG.
- the mold used can be made of different materials, preferably having non-stick properties.
- the mold is made of silicon, in which the pyramid-shaped imprints have been made by anisotropic etching of the silicon.
- the mold is coated, for example, with a thin layer of polysiloxane, to give the silicon non-stick properties.
- Any other Teflon ® -type high surface energy material can be used to make the non-stick mold.
- the polymer material of the layer 6 becomes hard again and the mold is easily detached thanks to its non-stick properties.
- the layer 6 is then structured with the pyramid-shaped tips, defining the tips of the conductive zones 5.
- a residual layer 7, of height h2 remains on the surface of the photodetector 2, in particular because of the inhomogeneities of parallelism and flatness of the mold.
- this residual layer 7 may be carried out, for example, by reactive plasma etching with an oxygen-based gas conventionally used for etching polymeric materials. It is possible to add to the oxygen a gas comprising fluorine, for example sulfur hexafluoride (SF 6 ), trifluoromethane (CHF 3 ) or tetrafluoromethane (CF 4 ), serving as a reaction catalyst.
- SF 6 sulfur hexafluoride
- CHF 3 trifluoromethane
- CF 4 tetrafluoromethane
- the photodetector 2 is then provided with a plurality of pyramid-shaped conductive zones 5, all electrically insulated from one another.
- the last step consists in assembling the photodetector 2 with the reading circuit 4.
- the assembly is done, for example, by inversion, or "flip-chip", by positioning the photodetector 2 provided with the conductive zones 5 on the reading circuit 4 comprising the conductive pads 3.
- each conductive zone 5 is arranged facing a conductive pad 3, previously produced on the read circuit 4.
- This assembly method also called “ hybridization”
- the assembly of the two components of the device 1 is performed at a temperature above the glass transition temperature of the conductive polymer material constituting the conductive zones 5 and the mechanical connection and the electrical connection between the two components are then obtained by curing the polymer material. conductor, during cooling.
- the manufacturing method differs from the previous embodiment in the location of the conductive zones 5.
- the conductive zones 5 are formed, according to the same principle than previously, by depositing a layer of conductive polymer material and by structuring this layer, so as to form a plurality of conductive zones 5.
- the conductive zones 5 are formed on the conductive pads 3 of the reading circuit 4. Each conductive zone 5 is structured directly on a corresponding conductive pad 3, to be isolated from the other conductive zones
- the assembly of the photodetector 2 on the read circuit 4 is then carried out without particular alignment, just by positioning the photodetector 2 on the conductive zones 5. This method thus makes it possible to eliminate all the problems possible alignment of the two components, during their assembly.
- the formation of the conductive zones 5 can be achieved by screen printing.
- the photodetector 2 and the reading circuit 4 provided with the conductive pads 3 are made beforehand as previously described, then a mask (not shown) defining the shapes of the conductive zones 5 is placed on the photodetector 2, or on the conductive pads 3 of the reading circuit 4.
- the conductive polymer material is then deposited in the free parts of the mask, to directly form the structured layer of conductive polymer material in the form of conductive zones 5.
- the mask is then removed and the conductive zones 5, arranged on the photodetector 2, or conductive pads 3, directly have their final shape.
- the conductive zones 5 are preferably in the form of parallelepiped, to facilitate masking and screen printing.
- the conductive polymer conductive material 5 thus plays both the role of electrical interconnection and assembly means between the photodetector 2 and the reading circuit 4 of the device 1 .
- the implementation temperature of the assembly is adjustable by modifying the parameters of the electrically conductive polymer material chosen, to take account, for example, of temperatures supported by each of the components to be assembled.
- a plasticizer component it is possible, by adding a plasticizer component, to modify the glass transition temperature of the conductive polymer material, that is to say its softening temperature.
- the electrical resistivity of the detection device 1 it is also possible to adjust the electrical resistivity of the detection device 1, by varying the percentages of the various constituent elements of the conductive polymer material chosen. Since the electrical resistivity range of the detection device 1 is preferably of the order of 10 -3 to 10 6 ⁇ .cm, the table below gives, for example, four types of conductive polymer material that can be used, to realize the detection device 1 shown in FIG.
- the polyaniline is of the "emeraldine base” type
- the constituent element intended for the doping of polyaniline is, for example, the 2-ethylhexyl diester of 4-sulphophthalic acid (DEHEPSA)
- the polymeric material is, for example, the 2-ethylhexyl diester of 4-sulphophthalic acid (DEHEPSA)
- the insulator is, for example, poly (methyl methacrylate) (PMMA)
- the plasticizer added to the other constituent elements is, for example, di-butyl phthalate.
- the compositions are given in percent by weight, excluding negligible proportion of solvent, which is preferably 2,2-dichloroacetic acid (DCAA), contained in the conductive polymer material.
- DCAA 2,2-dichloroacetic acid
- a deposit of the solution No. 3 of conductive polymer material, corresponding to a resistivity of the order of 2, 5 ⁇ .cm, is first performed, for example "on the spool", on a graphite substrate comprising a 300 ⁇ m layer of cadmium telluride (CdTe).
- CdTe cadmium telluride
- the removal of the solvent present in the conductive polymer material is carried out at 50 ° C. for 24 hours, in a chamber swept by a non-oxidizing gas of the Argon type.
- the thickness of the layer 6 of conductive polymer material after drying is approximately 5 ⁇ m.
- the printing is carried out, for example, at 100 ° C. with a pressure of, for example, 10 kg.
- These patterns have a size at the base of the order of 30 .mu.m by 30 .mu.m, a height of the order of 20 .mu.m and are arranged in the form of a matrix of 270 imprints by 270 imprints (FIG. 6), the pitch P between each pyramid being 50 ⁇ m.
- the residual layer 7 between the conductive zones 5 (FIG. 3) is then removed by reactive plasma etching with a gas, for example based on oxygen and with sulfur hexafluoride (SF 6 ).
- a gas for example based on oxygen and with sulfur hexafluoride (SF 6 ).
- the photodetector 2 is then assembled to the reading circuit 4, by contacting each conductive zone 5 with a conductive pad 3 of the reading circuit 4.
- Hybridization is preferably carried out at 80 ° C. with a low pressure of 500 g, so as to bring the conductive zones 5 into contact without completely crushing them in order to maintain electrical insulation between the conductive zones 5.
- the electronic device 1 is a detector comprising a photodetector 2 and a read circuit 4, connected by conductive zones 5 of electrically conductive polymer material. It is obvious that other electronic devices 1, comprising two assembled components, can be made with the same electrically conductive polymer material, constituting both the mechanical link and the electrical connection between the two components forming the device 1.
- the electronic device 1 may be a "smart card” type device.
- the first component for example made of silicon, is then a chip or an integrated circuit containing data, and comprises conductive pads placed, during assembly, with conductive pads of a flexible polymer substrate, for example made of polycarbonate, made of polypropylene or polyvinyl chloride, constituting the second component of the electronic device 1.
- the electronic device 1 may be, for example, a device of the "Chip Scale Package” (CSP) type.
- the first component is then a chip or an integrated circuit having an electronic function of calculation or memory.
- the first component is carried in a housing, constituting the second component, comprising conductive pads and providing a function of mechanical protection and interface, for example, with a printed circuit board.
- the housing can be made of insulating material, ceramic and / or glass and / or plastic.
- the electronic device 1 may be, for example, an imaging device of the "Liquid Crystal Display” (LCD) type.
- the first component is then constituted by one or more integrated control circuits, generally silicon, placed near the active area of a screen and allows the collection of signals from the active area of the screen.
- the first component is assembled, preferably by flipping, or "flip-chip" on a large glass substrate, constituting the second component of the device 1 and comprising conductive pads and electrical interconnection lines.
- the electronic device 1 may be, for example, a miniaturized sensor.
- the first component is then a sensor type Micro Electro Mechanical System (MEMS) or Micro Opto Electro Mechanical System (MOEMS), for example an accelerometer or a pressure sensor.
- MEMS Micro Electro Mechanical System
- MOEMS Micro Opto Electro Mechanical System
- the first component is assembled on the conductive pads of a housing, for example ceramic or silicon, constituting the second component of the device 1.
- the electronic device 1 may be, for example, a "Lab On Chip” system.
- the first component is then a biochip, which collects an electrical signal resulting from an interaction with a living medium.
- This biochip comprises conductive pads, which are connected to conductive pads of a housing or a substrate, constituting the second component of the electronic device 1.
- an intrinsically conductive polymer material as a means of connection and assembly between the two components.
- the implementation temperature of the assembly is adjustable by modifying the parameters of the constituent elements of the electrically conductive polymer material.
- the pitch P of connection between the conductive zones 5 of the device 1 is very fine, which optimizes the resolution and the surface density of connection between the two components.
- the electrically conductive polymer material having significant deformation qualities, it is possible to limit the possible thermomechanical constraints of temperature assembly, especially for hybridizations of components having large areas. These qualities can be further improved by mixing with another thermoplastic polymer material.
- the electrically conductive polymer material is thermoplastic and reversible, that is to say it allows the repair of the device 1. In fact, by heating the intrinsically conductive polymer material above its glass transition temperature, it softens reversibly and it is possible to envisage a dehybridization of the device 1 without damaging either the first component or the second component of the electronic device 1.
- the pyramid-shaped conductive zones 5 make it possible to dose the support force during the assembly of the device 1, while making up for possible flatness defects of the substrates.
- the invention is not limited to the various embodiments described above.
- the conductive zones 5 may in particular be in the form of parallelepiped, sphere or truncated cone.
- Such an electronic device 1 is particularly applicable to medical X-ray imaging (radiography, scanners, fluoroscopy, mammography, etc.), to X-ray and gamma imaging for large instruments (ESRF, synchrotron) and to spatial instrumentation, as well as X-ray non-destructive testing (CNDX).
- medical X-ray imaging radiology, scanners, fluoroscopy, mammography, etc.
- ESRF X-ray and gamma imaging for large instruments
- CNDX X-ray non-destructive testing
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Description
Claims
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FR0413287A FR2879347A1 (fr) | 2004-12-14 | 2004-12-14 | Dispositif electronique a deux composants assembles et procede de fabrication d'un tel dispositif |
FR0413287 | 2004-12-14 |
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US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
WO2009020572A2 (fr) | 2007-08-03 | 2009-02-12 | Tessera Technologies Hungary Kft. | Ensembles empilés utilisant des tranches reconstituées |
JP5639052B2 (ja) | 2008-06-16 | 2014-12-10 | テッセラ,インコーポレイテッド | ウェハレベルでの縁部の積重ね |
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JP2010532567A (ja) * | 2007-06-29 | 2010-10-07 | テッセラ,インコーポレイテッド | ピン・インタフェースを有する多層配線エレメント |
JP2014060431A (ja) * | 2007-06-29 | 2014-04-03 | Tessera Inc | ピン・インタフェースを有する多層配線エレメント |
US8230600B2 (en) | 2007-09-17 | 2012-07-31 | The Gillette Company | Cartridge detachment sensor |
US8510958B2 (en) | 2007-09-17 | 2013-08-20 | The Gillette Company | Cartridge detachment sensor |
JP2014045221A (ja) * | 2013-12-09 | 2014-03-13 | Sumitomo Electric Printed Circuit Inc | フレキシブルプリント配線板シートの製造方法 |
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FR2879347A1 (fr) | 2006-06-16 |
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