WO2006063502A1 - An optical-receiving module comprising an avalache photon diode with overload protection function - Google Patents

An optical-receiving module comprising an avalache photon diode with overload protection function Download PDF

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Publication number
WO2006063502A1
WO2006063502A1 PCT/CN2005/001761 CN2005001761W WO2006063502A1 WO 2006063502 A1 WO2006063502 A1 WO 2006063502A1 CN 2005001761 W CN2005001761 W CN 2005001761W WO 2006063502 A1 WO2006063502 A1 WO 2006063502A1
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apd
resistor
receiving module
reverse bias
voltage
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French (fr)
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Likun Zhang
Gordon Ries
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ZTE Corp
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ZTE Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode

Definitions

  • the invention relates to a high-speed light receiving module in the field of optical fiber communication, in particular to an Avalanche photon diode (hereinafter referred to as APD) light receiving module with overload protection function, and particularly relates to an excessive input optical power.
  • APD photodetectors also known as avalanche photodiodes, are high-sensitivity photodetectors that use the avalanche multiplication effect to multiply photocurrents.
  • Figure 1 shows a schematic diagram of the avalanche multiplication effect of APD photodetectors. During normal operation of the APD photodetector, the high reverse bias voltage across the APD forms a strong electric field within the APD device.
  • the electrons on the valence band absorb a photon and transition to the conduction band, resulting in an electron-hole pair, the electron-hole pair It is accelerated when passing through a strong electric field region, and obtains sufficient energy to collide with atoms in the lattice of the APD material during high-speed motion to ionize atoms in the crystal lattice, thereby generating new electron-hole pairs.
  • the electron-hole pairs generated by the collision are called secondary electron-hole pairs, and the secondary electron-hole pairs are accelerated when passing through the strong electric field region, and may collide with the atoms in the crystal lattice to cause ionization effect, which excites More electron-hole pairs, such that after multiple collisions, one ionization, more electron-hole pairs, an acceleration motion, and collision ionization, the number of carriers inside the APD device increases rapidly, and the reverse current rapidly Increase, resulting in an avalanche effect.
  • the input The average optical power is directly irradiated on the photosensitive surface of the detector through fiber coupling, and the anti-reflection film is coated on the photosensitive surface to prevent energy loss caused by a large amount of reflection of the optical signal.
  • the appropriate bias voltage and its inherent avalanche effect of the light receiving module made of APD are two key factors for the higher receiving sensitivity of the APD optical receiving module, and the inherent avalanche effect of the APD device is in the normal reverse bias.
  • the best receiving sensitivity can be obtained by setting the voltage. Therefore, the optimal gain factor M is closely related to the material of the APD device, the reverse bias voltage of the APD device, the avalanche voltage V B of the APD device, and the temperature, which can be described by the following simple empirical formula:
  • the actual reverse bias voltage V is typically set slightly below the avalanche voltage V B to obtain the optimum gain factor M.
  • the gain of the APD device is also sensitive to temperature changes.
  • Figure 2 shows the gain factor versus reverse bias voltage vs. temperature for a typical lOGb/s APD device. It can be seen from the graph of Fig. 2 that when the temperature rises, the avalanche voltage V B also increases. If the reverse bias voltage V does not change at this time, the gain coefficient M will drop a lot, and it is necessary to ensure an increase.
  • the benefit factor is essentially constant and the APD reverse bias voltage must be increased accordingly as the temperature increases. Therefore, the bias voltage circuit of the APD device must have a temperature compensation function.
  • the common APD bias voltage circuit is generally implemented by a WM (Pulse Wide Modulation) boost converter device and a voltage doubler circuit.
  • the input power source is usually a low voltage, and is subjected to DC/DC.
  • the boost circuit and the voltage doubler circuit are converted into a high voltage, and the output high voltage can be adjusted and controlled by the control terminal, and can be changed according to the change of the ambient temperature.
  • the integrated switch device inside the pulse width modulation boost converter device has a high limit. Withstand voltage, plus a voltage doubler network formed by an external circuit, the output voltage can be as high as 75V or more.
  • the APD reverse bias voltage circuit commonly used by the APD optical receiving module is shown in FIG. 4, and the DC/DC boosting circuit includes an APD bias voltage setting module, an APD bias voltage generating module, and an APD temperature sensor in the boosting circuit.
  • a precision resistor R with an error of 1% is connected in series between the output terminal and the APD high voltage pin as a sampling resistor of the photo-generated current.
  • a resistor divider network is used at both ends of the resistor to send the potential difference generated by the photo-generated current on the resistor.
  • a precision instrumentation operational amplifier To the input of a precision instrumentation operational amplifier, properly adjust the amplification factor of the precision instrumentation operational amplifier to obtain a voltage curve that varies approximately linearly with the input optical power in the dynamic range of the input optical power, so it can be used to detect the input optical power value.
  • the capacitor C connected between the APD high voltage pin and ground is mainly used for filtering to reduce the noise interference of the APD bias power supply.
  • the resistance of the sampling resistor R can't be chosen too much. If the resistance value is too large, when the input optical power increases, the voltage drop on the resistor increases, causing the input voltage of the precision instrumentation op amp to be greater than its input.
  • the mode voltage does not work properly, so the input optical power of the APD optical receiving module cannot be correctly detected under high input optical power conditions.
  • the resistance of the sampling resistor R is too large, the input optical power is at the overload point.
  • the APD reverse bias voltage is too small to work properly. Work.
  • the APD device can be operated near the optimal reverse bias voltage to obtain the best receiving sensitivity, and the overload point test can also meet the index requirements.
  • the photo-generated current of the APD varies linearly with the input optical power, making the APD device work well.
  • the optical signal output from the optical amplifier is not attenuated, directly connected to the APD optical receiving module, or the optical fiber transmission system checks the optical fiber line online.
  • the super-pulse light emitted by the optical time domain reflectometer will pass through the line amplifier to the APD optical receiving module of the relay end or the receiving end), so that the input optical power greatly exceeds the APD input overload optical power, and the linear relationship between the input and the output is destroyed.
  • the technical problem to be solved by the present invention is: to provide an APD optical receiving module with overload protection function, in view of the disadvantage that the existing APD optical receiving module often damages when inputting a strong input optical power much larger than the overload optical power, It is said that an APD optical receiving module with overload protection function under excessive input optical power is provided.
  • An APD optical receiving module with overload protection function comprising: an avalanche photodiode; a DC/DC boosting circuit for providing a reverse bias voltage to the avalanche photodiode; a sampling resistor for input optical power detection, One end of the sampling resistor is connected to an output end of the DC/DC boosting circuit; and a first filter capacitor; a series connection limit between the other end of the sampling resistor and a reverse bias pin of the avalanche photodiode a current protection resistor, and the resistance of the current limiting protection resistor is greater than a resistance of the sampling resistor; the first filter capacitor is connected between the connection of the sampling resistor and the current limiting protection resistor and ground.
  • a second filter capacitor is connected between the current limiting protection resistor and the reverse bias pin of the avalanche photodiode and the ground.
  • the light receiving module wherein: when the avalanche photodiode adopts an avalanche photodiode having a transmission rate of 2.5 Gb/s, the resistance of the current limiting protection resistor is set between 20 kQ and 40 kQ; When the avalanche photodiode is used as an avalanche photodiode having a transmission rate of 10 Gb/s, the resistance of the current limiting protection resistor is set between 10 kO and 20 k ⁇ .
  • the light receiving module wherein: the first filter capacitor has a value of O.luF; and the second filter capacitor has a value of 100 pF.
  • the beneficial effects of the present invention are as follows: With the technical solution of the present invention, the current limiting protection resistor is connected in series between the sampling resistor and the reverse bias of the avalanche photodiode, and the resistance of the current limiting protection resistor is much larger than that of the sampling resistor. Resistance, therefore, when the input optical power is too high, the voltage drop generated by the instantaneous generation of a large photo-generated current on the current-limiting protection resistor will increase rapidly, and the reverse bias voltage of the avalanche photodiode will also rapidly decrease.
  • the role of protection improves the resistance of the APD optical receiving module to the super input optical power, and the reliability of the online operation of the APD optical receiving module in the actual optical transmission system is also greatly improved.
  • Figure 1 is a schematic diagram of the process of avalanche multiplication effect of an APD photodetector
  • Figure 2 is a graph showing the gain coefficient of APD photodetector as a function of temperature;
  • Figure 3 is a DC/DC boost circuit and voltage doubling circuit diagram of the commonly used APD;
  • Figure 4 is a block diagram of the commonly used APD reverse bias voltage circuit. ;
  • Figure 5 is a graph showing the relationship between the APD input optical power and its reverse bias voltage when the resistance values are different
  • Figure 6 is a graph showing the relationship between the APD input optical power and its reverse bias voltage when the filter capacitor values are different;
  • Figure 7 is a block diagram of an APD reverse bias voltage circuit with overload protection
  • Figure 8 is a test data table after the APD optical receiving module with overload protection function inputs a large optical power during normal operation. detailed description
  • An APD optical receiving module with overload protection function includes an avalanche photodiode, a DC/DC boosting circuit that provides a reverse bias voltage for the avalanche photodiode, and a peripheral control circuit thereof, used as The precision sampling resistor Rl of the input optical power detection is used to convert the photo-generated current generated by the APD into a voltage, which is placed by a subsequent precision instrumentation operational amplifier.
  • one end of the sampling resistor is connected to the output end of the DC/DC boosting circuit;
  • a current limiting protection resistor R2 is connected in series between the other end of the sampling resistor and the reverse bias pin of the avalanche photodiode, and the resistance of the current limiting protection resistor is much larger than the resistance of the sampling resistor.
  • the dark current even if a large input optical power is received, does not generate a large photo-generated current, so that the APD device can be effectively protected from overcurrent damage due to receiving excessive input optical power.
  • filter the power supply noise and fully exert the function of the device of the present invention, except that the first filter capacitor C1 is connected between the sampling resistor R1 and the current limiting protection resistor R2 and the ground. Further, a second filter capacitor C2 is also connected between the current limiting resistor R2 and the connection of the reverse bias pin of the avalanche photodiode to the ground.
  • the overload protection performance of the APD optical receiving module is directly related to the resistance between the output of the DC/DC boosting circuit and the reverse biasing pin of the avalanche photodiode, and the magnitude of the filter capacitor.
  • the following is an analysis of the selection of the resistance and capacitance parameters in the block diagram of the existing optical receiving module shown in FIG. 4, which is the relevant resistance and capacitance parameter in the APD optical receiving module with overload protection function. The basis for the selection and determination of the number.
  • VAPD reverse bias voltage
  • iAPD maximum operating current
  • Equation (1) M is the gain factor of the APD device, Ro is the unit multiplication responsiveness, and R is the responsiveness of the APD device.
  • P in is the input optical power
  • V is the output DC voltage value of the DC/DC boost circuit
  • R is the resistance value
  • C is the capacitance value.
  • the gain factor M value and the inverse The bias voltage VAPD is related, that is, M can be considered as a function of VAPD, and when the reverse bias voltage VAPD reaches a certain value, the gain factor M will be maximized.
  • the APD device can not work normally near the overload point, which affects the dynamic range of the normal operation of the APD device. Therefore, the selection of the resistor R cannot be arbitrarily increased. It must be selected according to the actual APD optical receiving module to ensure the dynamic range of the APD device. Being able to work properly is the basic principle of choosing this resistor.
  • the relationship between the reverse bias voltage VAPD of the APD device and the input optical power Pin shown in FIG. 6 is based on the filter capacitor C as a parameter, thereby discussing the influence of the filter capacitor C on the APD reverse bias voltage.
  • Curve 1 corresponds to OlOOuF
  • curve 2 corresponds to O0.1uF. It can be seen from the comparison of the two curves that the smaller the filter capacitor value is selected, the faster the APD reverse bias voltage drops when the input optical power increases. However, if the capacitance is too small, it will affect the filtering effect of low-frequency noise. On the contrary, if the value of the filter capacitor is larger, the APD reverse bias voltage drops slowly when the input optical power increases.
  • the results of the above analysis are equally applicable to the APD light receiving module of the present invention.
  • the R-sampling resistor R1+ current-limiting protection resistor R2, and the resistance of the current-limiting protection resistor R2 is much larger than the resistance of the sampling resistor R1, so the selection of the current-limiting protection resistor R2 is decisive for the influence of overload performance.
  • the meaning Since the APD optical receiving module has an overload point, if the resistance of the current limiting protection resistor R2 is too large, the reverse bias voltage of the APD device is reduced to less than the optimal bias when the receiving power is slightly lower than the overload optical power point.
  • the overload point indicator of the APD device When the voltage is set, the overload point indicator of the APD device will be unqualified, so the resistance value of the current limiting protection resistor R2 has a necessary range; after actual simulation, the current limiting protection resistor R2 is used for the 2.5Gb/s APD device.
  • the selection range is 20kQ To 40kQ, for lOGb/s APD devices, the current-limiting protection resistor R2 can be selected from 10k ⁇ to 201 ⁇ ; and C2 is generally 100pF to ensure that the APD reverse bias voltage is reduced when the input optical power increases. It's faster.
  • the current limiting protection resistor R2 can be selected from 20kQ to 40kO.
  • the current limiting protection resistor R2 can be selected from 101 ⁇ to 20kQ for different manufacturers.
  • the APD device Since the photo-generated current generated by the APD device is different under the same incident light conditions, some may be larger or some may be smaller. The purpose of the value in this range is to ensure that the APD device is strong for all manufacturers.
  • the reverse bias voltage of the APD device can generally be reduced to below 5V or even lower, and the larger the resistance value, the larger the voltage drop across the resistor, and the reverse bias voltage of the APD device. The lower the APD device with a small photo-generated current, the only resistance with a slightly larger resistance can be used, which ultimately destroys the avalanche effect of the APD device, and the APD device is no longer damaged by overload.
  • the DC/DC boosting circuit adopts pulse width modulation technology, and its output voltage ranges from 35 to 78V, and the output voltage can be adjusted by the peripheral control circuit.
  • a temperature compensation network is added to the peripheral control circuit to compensate for changes in the avalanche voltage of the APD device due to temperature changes, and to linearly compensate for changes in the output voltage over the full temperature range of the APD optical receiver module.
  • the APD optical receiving module with overload protection function of the present invention as shown in FIG. 7 for experimental verification.
  • the experimental test results are shown in FIG.
  • the output wavelength and average power are adjustable, and the maximum output optical power is +20dBm.
  • the strong optical power is directly input into the APD optical receiving module with the overload protection function according to the present invention, and the APD optical receiving module is in the power-on state, and the APD devices of various vendors pass 10 to 60 minutes.
  • the sensitivity and the overload point are re-tested, and the receiving sensitivity and the overload point of the APD light receiving module are found to be unchanged, and the APD light receiving module with the overload protection function according to the present invention is not used in the input light.
  • OdBm the APD device is quickly damaged.
  • the experimental results further prove that the APD bias circuit with the overload protection device of the present invention can effectively protect the APD optical receiving module, avoiding the overload damage of the APD when the input light is strong, and greatly improving the APD optical receiving module in the actual optical transmission system. Reliability of operation.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Light Receiving Elements (AREA)
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Description

具有过载保护功能的雪崩光电二极管光接收模块 技术领域
本发明涉及光纤通信领域中的高速光接收模块， 尤其涉及一种具有过 载保护功能的雪崩光电二极管（Avalanche photon diode) (以下简称 APD) 光接收模块，且特别涉及一种在过高输入光功率条件下具有过载保护功能 的 APD光接收模块。 背景技术
APD光电探测器又称为雪崩光电二极管，是利用雪崩倍增效应使光电 流得到倍增的高灵敏度光电探测器， 图 1所示为 APD光电探测器发生雪 崩倍增效应的过程示意图。 APD光电探测器在正常工作时， APD两端设 置的高反向偏置电压在 APD器件内部形成一个强电场区域。 当有光入射 到 PN结上， 并且光子的能量大于半导体材料的禁带宽度， 则价带上的电 子吸收一个光子而跃迁到导带， 结果产生电子-空穴对， 该电子-空穴对经 过强电场区域时被加速， 获得足够的能量， 在高速运动的过程中和 APD 材料晶格中的原子碰撞， 使晶格中的原子电离， 从而产生新的电子 -空穴 对， 这种经过碰撞产生的电子 -空穴对称为二次电子-空穴对， 二次电子- 空穴对在经过强电场区域时又被加速， 又可能碰撞晶格中的原子使其产生 电离效应， 激发出更多的电子-空穴对， 这样经过多次碰撞一电离一更多 的电子-空穴对一加速运动―碰撞电离的结果， 使 APD器件内部的载流子 数目迅速增加， 反向电流迅速加大， 从而产生雪崩效应。 图 1中， 输入的 平均光功率通过光纤耦合直接照射在探测器的光敏面上， 光敏面上镀了增 透膜， 防止光信号因大量反射而造成能量损失。
用 APD做成的光接收模块， 其合适的偏置电压和其内在的雪崩效应 是 APD光接收模块具有较高接收灵敏度的两个关键因素， 而 APD器件的 内在雪崩效应在正常的反向偏置电压作用下才可以得到最佳的接收灵敏 度。 因此， 最佳增益因子 M与 APD器件的材料、 APD器件的反向偏置电 压 、 APD器件的雪崩电压 VB以及温度等因素密切相关， 可以用以下简 单的经验公式来描述：
M=l/[l-(V/VB)n]
式中的系数 n与 APD器件的构成材料有关对于典型的 InGaAs材料， n=3.45。 由上式可知， 当实际的反向偏置电压 V远小于雪崩电压 VB时， 不足以使 APD产生雪崩效应， APD产生的光生电流很小， 因此增益因子 M较小； 当实际的反向偏置电压 V等于雪崩电压 VB时， 增益因子 M趋 向于无穷大， 但是由于光电器件材料和制造工艺的限制以及雪崩倍增发生 时产生的噪声也非常大， 实际的增益因子（或增益系数） M的值不可能达 到无穷大； 当实际的反向偏置电压 V大于雪崩电压 VB时， 增益系数 M会 迅速下降， 这时 APD器件可能由于反向偏置电压过高而迅速击穿损坏， 由此可见， 实际的反向偏置电压 V通常设置在略低于雪崩电压 VB附近， 以得到最佳增益因子 M。另外， APD器件的增益对温度的变化也很敏感， 图 2给出了典型的 lOGb/s APD器件的增益系数与反向偏置电压与温度的 关系曲线。 从图 2曲线中可见， 当温度升高时， 雪崩电压 VB也在增大， 如果此时反向偏置电压 V不变， 则增益系数 M会下降许多， 要想保证增 益系数基本不变， 必须在温度升高时相应地增加 APD反向偏置电压。 所 以 APD器件的偏置电压电路必须具有温度补偿功能。 目前， 比较通用的 APD偏置电压电路普遍采用 WM (Pulse wide modulation，脉宽调制）升 压转换器件及倍压电路来实现， 如图 3所示， 输入电源通常是低电压， 经 过 DC/DC升压电路及倍压电路变换后成为高电压， 输出高电压可以通过 控制端控制调节， 并且能够随着环境温度的变化而变化， 脉宽调制升压转 换器件内部集成开关器件具有较高的极限耐压， 再加上外部电路构成的倍 压网络， 使输出电压可高达 75V以上。
APD光接收模块通常使用的 APD反向偏置电压电路如图 4所示， DC/DC升压电路包括 APD偏置电压设定模块、 APD偏置电压产生模块及 APD温度传感器， 在升压电路输出端和 APD高压管脚之间串接一个误差 为 1 %的精密电阻 R作为光生电流的取样电阻， 电阻两端分别用一个电阻 分压网络， 将电阻上由光生电流而产生的电位差送到一个精密仪表运算放 大器的输入端， 适当地调节精密仪表运算放大器的放大倍数， 得到一个在 输入光功率动态范围内随输入光功率近似线性变化的电压曲线， 因此可以 用来检测输入光功率值的大小。 连接在 APD高压管脚与地之间的电容 C 主要作滤波使用， 以降低 APD偏置电源的噪声干扰。 取样电阻 R的阻值 一般不能选择太大， 如果阻值选择太大， 当输入光功率增大时， 在该电阻 上的电压降增大， 导致精密仪表运算放大器的输入端电压大于其输入共模 电压而不能正常工作， 因而在高输入光功率条件下不能正确检测 APD光 接收模块输入光功率的大小， 另一方面， 取样电阻 R的阻值过大也会造成 如果输入光功率在过载点附近时， APD反向偏置电压过小而不能正常工 作。 上述电路， 通过调节控制电压， 可以使 APD器件工作在最佳反向偏 置电压附近从而得到最佳的接收灵敏度， 过载点测试也能够满足指标要 求。 在输入光功率动态范围内， APD 的光生电流随输入光功率而线性变 化， 使得 APD器件能很好地工作。 但是在实际工程中常常由于误操作等 因素 （例如， 由于操作失误， 误将从光放大器中输出的光信号不作衰减， 直接接入到 APD光接收模块， 或光纤传输系统在线捡查线路光纤时， 光 时域反射计发射的超强脉冲光会经过线路放大器到达中继端或接收端的 APD光接收模块）使输入光功率大大超出 APD输入过载光功率， 使输入、 输出的线性关系遭到破坏，造成 APD器件不能正常工作甚至损坏的情况， 特别是当输入光功率远大于 APD器件的过载光功率时， 由于此时 APD器 件的反向偏置电压使得 APD仍然工作在最佳增益状态， 光生电流会瞬时 迅速增加到远大于 APD 的饱和输出电流， 从而在极短的时间内迅速将 APD器件损坏， 给光模块制造商和客户均造成较大的损失。 因此如何保证 在较大的输入光功率条件下， APD光接收模块不被损坏已经成为光接收模 块设计中必须解决的难题。 发明内容
本发明所要解决的技术问题是： 针对现有 APD光接收模块在输入远 大于过载光功率的强输入光功率时常常会损坏的缺点，提供一种具有过载 保护功能的 APD光接收模块， 更具体地说， 提供一种在过高输入光功率 条件下具有过载保护功能的 APD光接收模块。
本发明为解决上述技术问题所采用的技术方案为： 一种具有过载保护功能的 APD光接收模块， 包括： 雪崩光电二极管; 为所述雪崩光电二极管提供反向偏置电压的 DC/DC升压电路； 用于输入 光功率检测的取样电阻， 所述取样电阻的一端与所述 DC/DC升压电路的 输出端连接； 以及第一滤波电容； 在所述取样电阻的另一端与所述雪崩光 电二极管的反向偏压管脚之间串接限流保护电阻，且所述限流保护电阻的 阻值大于所述取样电阻的阻值；所述第一滤波电容接于所述取样电阻和所 述限流保护电阻的连接处与地之间。
所述的光接收模块， 其中： 在所述限流保护电阻和所述雪崩光电二极 管的反向偏压管脚的连接处与地之间接有第二滤波电容。
所述的光接收模块， 其中： 当所述雪崩光电二极管采用的是传输速率 为 2.5Gb/s 的雪崩光电二极管时， 所述限流保护电阻的阻值设置在 20kQ 至 40kQ之间；当所述雪崩光电二极管釆用的是传输速率为 lOGb/s的雪崩 光电二极管时， 所述限流保护电阻的阻值设置在 lOkO至 20kQ之间。
所述的光接收模块， 其中： 所述第一滤波电容取值为 O.luF; 所述第 二滤波电容取值为 100pF。
本发明的有益效果为： 采用本发明的技术方案， 由于在取样电阻与雪 崩光电二极管的反向偏压之间串接了限流保护电阻，并且限流保护电阻的 阻值远大于取样电阻的阻值， 因此， 当输入光功率过高时， 瞬时产生较大 的光生电流在限流保护电阻上产生的电压降会迅速增大，导致雪崩光电二 极管的反向偏置电压也迅速降低下来，直至降低到雪崩光电二极管无法产 生雪崩效应， 此时即使 APD光接收模块接收到很大的输入光功率， 也不 会产生很大的光生电流而造成雪崩光电二极管的过流损坏，从而起到了过 载保护的作用。 本发明提高了 APD光接收模块对超强输入光功率的抵抗 能力， 并使 APD光接收模块在实际的光传输系统中在线运行的可靠性也 大大提高。 附图说明
图 1为 APD光电探测器发生雪崩倍增效应的过程示意图；
图 2为 APD光电探测器的增益系数随温度变化的关系曲线； 图 3为通常采用的 APD的 DC/DC升压电路及倍压电路图； 图 4为通常使用的 APD反向偏置电压电路框图；
图 5为电阻值不同时， APD输入光功率与其反向偏置电压的关系曲线 图；
图 6为滤波电容值不同时， APD输入光功率与其反向偏置电压的关系 曲线图；
图 7为具有过载保护功能的 APD反向偏置电压电路框图；
图 8为具有过载保护功能的 APD光接收模块正常工作时输入较大光 功率后的测试数据表格。 具体实施方式
下面根据附图和实施例对本发明作进一步详细说明。
—种具有过载保护功能的 APD光接收模块， 如图 7所示， 包括雪崩 光电二极管， 为所述雪崩光电二极管提供反向偏置电压的 DC/DC升压电 路及其外围控制电路， 用作输入光功率检测的精密取样电阻 Rl， 其作用 是把 APD产生的光生电流转换成电压， 经后续的精密仪表运算放大器放 大， 利用 APD输入光功率动态范围内检测电压与输入光功率的近似线性 关系来检测 APD输入光功率的大小， 所述取样电阻的一端与所述 DC/DC 升压电路输出端连接；在所述取样电阻的另一端与所述雪崩光电二极管的 反向偏压管脚之间串接限流保护电阻 R2， 并使限流保护电阻的阻值远大 于所述取样电阻的阻值。 这样， 当 APD处于最佳反向偏置电压状态时， 在正常输入光功率状态下，由于取样电阻 R1的阻值要比限流保护电阻 R2 的阻值小许多， 不影响取样检测的动态范围； 如果输入光功率突然增大至 过载状态， 必然会产生瞬时较大的光生电流， 伴随着瞬时光生电流的迅速 增大，在限流保护电阻 R2上的电压降也迅速增大，导致 APD反向偏置电 压也迅速降低下来。 由前面分析我们知道， 合适的反向偏置电压是 APD 器件发生雪崩效应的必然条件， 当 APD反向偏置电压降低到无法产生雪 崩效应时， APD产生的光生电流很小，甚至只有很小的暗电流，此时即使 接收到很大的输入光功率， 也不会产生很大的光生电流， 因而可以有效地 保护 APD器件不再因接收到过强的输入光功率而过流损坏。 为了降低电 源噪声对 APD器件接收灵敏度的影响， 滤除电源噪声， 且充分发挥本发 明装置的作用， 除了在取样电阻 R1与限流保护电阻 R2的连接处与地之 间接第一滤波电容 C1夕卜， 还在所述限流电阻 R2与所述雪崩光电二极管 的反向偏压管脚的连接处与地之间接有第二滤波电容 C2。
APD光接收模块的过载保护性能与串接在 DC/DC升压电路输出端与 雪崩光电二极管的反向偏压管脚之间的电阻， 以及滤波电容的取值大小有 直接的关系。以下通过对图 4所示的现有光接收模块框图中电阻电容参数 选取的分析， 为具有过载保护功能的 APD光接收模块中相关电阻电容参 数的选择和确定奠定基础。
APD器件正常工作的两个重要参数是反向偏置电压 VAPD和最大工作 电流 iAPD， 其中：
ΙΑΡΒ= (Μ · Ro) Pin=R · Pin， ( 1 ) 贝 'J
Figure imgf000010_0001
· (M · ¾) Pin · R · ( l-e"t/RC) (2) 式 (1)中： M是 APD器件的增益因子， Ro是单位倍增响应度， R是 APD器件的响应度， 式 （2) 中 Pin是输入光功率， V是 DC/DC升压电路 的输出直流电压值， R为电阻值， C是电容值。 由公式（2)可见， 增益 因子 M值与反向偏置电压 VAPD是有关的， 即可以认为 M是 VAPD的函数， 当反向偏置电压 VAPD到某一定值时， 增益因子 M将达到最大。
以典型的 2.5Gb/s APD光接收模块为例， 假设 DC/DC升压电路输出 电压为 75V (高速光通信用 2.5Gb/s光电探测器 APD雪崩电压的范围是 40〜80V)， 典型的 APD器件响应度 R为 8.5A/W, 选择电容 OO.luF时， 分别选择 R=5kQ和 R=8kQ， 由公式（2) 可以得到 APD器件反向偏置电 压 VAPD与输入光功率 PiJ 曲线关系如图 5所示。 由图 5曲线可见， 在弱 的输入光功率条件下几乎不影响 APD的反向偏置电压， 也就是说对增益 系数几乎没有任何影响， 因而对 APD器件的接收灵敏度也几乎没有任何 影响。 随着输入光功率的增加， 尤其是在大于过载光功率 （>-9dBm) 之 后， APD反向偏置电压会迅速下降，并且下降的速率根据电阻阻值的不同 而不同。 图中曲线 1对应电阻为 R=5ka， 曲线 2对应电阻为 R=8kQ， 比 较这两组曲线可知， 随着电阻值的增大， 在高输入光功率时 APD反向偏 置电压下降越快。 但是当我们继续增加电阻值时会发现在 APD器件过载 点附近反向偏置电压值要下降， 这时有可能会导致增益系数下降， 造成
APD器件在过载点附近不能正常工作， 而影响了 APD器件正常工作的动 态范围， 所以电阻 R的选择也不能任意增大， 必须根据实际的 APD光接 收模块进行选择， 保证在 APD器件动态范围内能够正常工作是选择该电 阻的基本原则。
图 6所示的 APD器件反向偏置电压 VAPD与输入光功率 Pin的关系曲 线， 以滤波电容 C为参变量， 从而讨论滤波电容 C对 APD反向偏置电压 的影响。 其中曲线 1对应 OlOOuF, 曲线 2对应 O0.1uF， 从两条曲线的 比较中可看出， 选择滤波电容值越小， 在输入光功率升高时， APD反向偏 置电压下降得越快， 但电容过小会影响低频噪声的滤除效果； 相反如果滤 波电容值越大，在输入光功率升高时， APD反向偏置电压下降得缓慢一些。 为了有效地保护 APD器件， 我们期望在强输入光功率增加时， APD反向 偏置电压迅速降低， 因此， 为使 APD光接收模块获得良好的过载保护性 能， 并兼顾其滤波效果， 一般选择
Figure imgf000011_0001
的电容。
上述分析的结果， 同样适用于本发明的 APD光接收模块。 只不过其 中 R-取样电阻 R1+限流保护电阻 R2， 而由于限流保护电阻 R2的阻值远 大于取样电阻 R1 的阻值， 所以限流保护电阻 R2阻值的选取对于过载性 能的影响具有决定性的意义。 由于 APD光接收模块都有过载点， 若限流 保护电阻 R2的阻值太大， 则会导致在接收略低于过载光功率点时， APD 器件的反向偏置电压降低到小于最佳偏置电压， APD器件的过载点指标将 不合格， 所以该限流保护电阻 R2的阻值有一个必要的范围； 经过实际的 仿真确定，对于 2.5Gb/s的 APD器件，限流保护电阻 R2的选择范围为 20kQ 到 40kQ，对于 lOGb/s的 APD器件，限流保护电阻 R2的选择范围为 10kQ 到 201ίΩ; 而 C2—般取值为 100pF， 以保证在输入光功率增大时， APD反 向偏置电压降低得更快。
其中， 上述对于 2.5Gb/s的 APD器件， 限流保护电阻 R2的选择范围 为 20kQ到 40kO， 对于 10Gb/s的 APD器件， 限流保护电阻 R2的选择范 围为 101Ώ到 20kQ是针对不同厂家的 APD器件而言的。由于在相同入射 光条件下， APD器件产生的光生电流是不同的，有的可能大一些，有的可 能小一些， 在这样的范围内来取值的目的是保证对所有厂家的 APD器件 在强输入光条件下， APD器件的反向偏置电压一般均可以降低到 5V以下 甚至更低， 且电阻值越大，在电阻上产生的电压降就越大， APD器件的反 向偏置电压就越低， 对于光生电流较小的 APD器件， 只能使用阻值稍大 的电阻， 从而最终破坏 APD器件产生雪崩效应的条件， 保护 APD器件不 再因过载而损坏。
在实际的 2.5Gb/s APD光接收模块电路中， DC/DC升压电路采用脉宽 调制技术， 其输出电压为范围为 35〜78V， 而且是可通过外围控制电路调 节输出电压大小的， 为了适应温度变化， 在外围控制电路中增加了温度补 偿网络， 用来补偿因温度变化而造成 APD器件雪崩电压的变化， 在 APD 光接收模块工作全温度范围内线性补偿输出电压的变化。输入光功率检测 取样电阻 R1选择 4.75k±l%的精密电阻， APD限流保护电阻 R2选择 20〜 40 1:Ω的电阻， 滤波电容 Cl = 0.1uF， C2= 100pF, 在正常工作条件下， 输 入 +20dBm的平均光功率，测量 APD器件的反向偏置电压已经降低到 10V 左右， 此时的 APD器件几乎没有倍增特性， 光生电流很小， 几乎相当于 暗电流的强度， 因而可以确保 APD接收器件不再损坏。
为了验证上述保护措施的有效性，我们采用如图 7所示的本发明具有 过载保护功能的 APD光接收模块来进行实验验证， 实验测试结果如图 8 所示。 实验选用的 APD光接收模块的型号为 OF3637B-CTM421 , 其雪崩 电压分别为 VB=63.3V和 VB=64.9V， 另外一种 APD光接收模块的型号为 F0862482T,其雪崩电压为 VB=55.3V， 光源统一采用 Santec TSL-210可调 谐激光器， 其输出波长和平均功率均可调， 最大输出光功率为 +20dBm。 实验时直接将较强的光功率输入到采用本发明所述的具有过载保护功能 的 APD光接收模块中， APD光接收模块处于上电状态， 各种不同供应商 的 APD器件经过 10〜60分钟时间的强光入射后再重新测试灵敏度和过载 点， 可发现 APD光接收模块的接收灵敏度和过载点没有任何改变， 而没 有采用本发明所述的具有过载保护功能的 APD光接收模块在输入光功率 大于 OdBm时， APD器件瞬间就很快损坏。实验结果进一步证实了本发明 具有过载保护装置的 APD偏置电路可以有效地保护 APD光接收模块，避 免强输入光时 APD的过载损坏，大大地提高了 APD光接收模块在实际光 传输系统中在线运行的可靠性。
可以理解的是， 对本领域普通技术人员来说， 可以根据本发明的技术 方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于 本发明所附的权利要求的保护范围。

Claims

权 利 要 求
1、 一种具有过载保护功能的雪崩光电二极管光接收模块， 包括： 雪 崩光电二极管； 为所述雪崩光电二极管提供反向偏置电压的 DC/DC升压 电路； 用于输入光功率检测的取样电阻， 所述取样电阻的一端与所述 DC/DC升压电路的输出端连接； 以及第一滤波电容； 其特征在于： 在所 述取样电阻的另一端与所述雪崩光电二极管的反向偏压管脚之间串接限 流保护电阻， 且所述限流保护电阻的阻值大于所述取样电阻的阻值； 所述 第一滤波电容接于所述取样电阻和所述限流保护电阻的连接处与地之间。
2、 根据权利要求 1所述的光接收模块， 其特征在于： 在所述限流保 护电阻和所述雪崩光电二极管的反向偏压管脚的连接处与地之间接有第 二滤波电容。
3、 根据权利要求 1或 2所述的光接收模块， 其特征在于： 当所述雪 崩光电二极管采用的是传输速率为 2.5Gb/s的雪崩光电二极管时， 所述限 流保护电阻的阻值设置在 20kQ至 40kn之间； 当所述雪崩光电二极管采 用的是传输速率为 lOGb/s的雪崩光电二极管时， 所述限流保护电阻的阻 值设置在 10kQ至 20kQ之间。
4、 根据权利要求 2所述的光接收模块， 其特征在于： 所述第一滤波 电容取值为 O.luF; 所述第二滤波电容取值为 100pF。
5、 根据权利要求 3所述的光接收模块， 其特征在于： 所述第一滤波 电容取值为 O.luF; 所述第二滤波电容取值为 100pF。
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