WO2006054407A1 - Electrostatic chuck for vacuum bonding equipment and vacuum bonding equipment using the same - Google Patents

Electrostatic chuck for vacuum bonding equipment and vacuum bonding equipment using the same Download PDF

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Publication number
WO2006054407A1
WO2006054407A1 PCT/JP2005/018679 JP2005018679W WO2006054407A1 WO 2006054407 A1 WO2006054407 A1 WO 2006054407A1 JP 2005018679 W JP2005018679 W JP 2005018679W WO 2006054407 A1 WO2006054407 A1 WO 2006054407A1
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WO
WIPO (PCT)
Prior art keywords
layer
dielectric
substrate
protective layer
electrostatic chuck
Prior art date
Application number
PCT/JP2005/018679
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshikazu Ohtani
Takeshi Shima
Ritsu Kawase
Original Assignee
Shin-Etsu Engineering Co., Ltd.
Tomoegawa Paper Co., Ltd.
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Publication date
Application filed by Shin-Etsu Engineering Co., Ltd., Tomoegawa Paper Co., Ltd. filed Critical Shin-Etsu Engineering Co., Ltd.
Publication of WO2006054407A1 publication Critical patent/WO2006054407A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

Definitions

  • the present invention relates to a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP), which is attached to a substrate such as CF glass or TFT glass by suction.
  • the present invention relates to an electrostatic chuck for a vacuum bonding apparatus used in the case and a vacuum bonding apparatus using the same.
  • a flat electrode layer is covered with a dielectric layer, and an electrostatic chuck for a vacuum bonding apparatus that holds the dielectric layer in contact with the substrate and holds the same in contact with the substrate, or a dielectric layer deposited on the surface of the electrode layer.
  • the present invention relates to an electrostatic chuck for a vacuum bonding apparatus formed by bonding an electroadhesive function unit and a pedestal disposed on the back surface of the electrode layer, and a vacuum bonding apparatus using the same.
  • a plate-like laminated structure in which an electrostatic adsorption function portion in which (dielectric) and an electrode layer (electrode portion) for supplying an electric field thereto are laminated and a pedestal portion (supporting base material) serving as a base thereof
  • the insulating organic material such as polyimide used as the material of the dielectric layer has water absorbency, it is incorporated into a vacuum bonding apparatus (a bonding apparatus for flat panel substrates), and the material is incorporated into a vacuum bonding apparatus. When used, it generates moisture and other gases, and the adsorption of the substrate can not be maintained accordingly, causing the substrate to fall.
  • the surface of this dielectric layer is a polyethylene film having low gasification and low gas permeability. By covering with a dielectric film, the surface of the dielectric and the atmosphere are shut off to prevent the generation of gas during use in vacuum, thereby preventing the substrate from falling by its own weight (for example, a patent). Reference 1).
  • the surface of the electrode layer is a single-layer dielectric layer that also has a force such as polyimide and a very thin dielectric film such as a polyethylene film.
  • a force such as polyimide
  • a very thin dielectric film such as a polyethylene film.
  • the scratch caused by such foreign matter is a scratch caused by a minute foreign matter, it gradually progresses in the thickness direction of the dielectric layer over time and becomes a crack, and the dielectric layer becomes a single layer. Because of the structure, cracks from the surface side directly reach the electrode layer.
  • a base material layer having a single-layer structure is provided on the back surface side of the electrode layer using an adhesive or an adhesive.
  • the back surface and the pedestal portion are bonded using an adhesive or an adhesive agent, when the back surface of the base material layer and the pedestal portion are bonded together in the manufacturing process, foreign matter may be entrapped between these both. Also, if there is an uneven portion such as solder on the bonding surface of the pedestal portion, the electrode layer may be damaged via the base material layer to damage the electrostatic adsorption function portion.
  • the inventions set forth in claims 1 and 4 have an object to prevent damage to the electrostatic adsorption functional part due to the intrusion of foreign matter.
  • the invention described in claim 3 aims to reduce the crack generation rate of the dielectric protective layer.
  • the invention according to claim 1 of the present invention is characterized in that at least one or more dielectric protective layers of a predetermined thickness are provided on the surface of the dielectric layer and disposed on the most surface side.
  • the structure from the substrate contact surface of the dielectric protective layer to the electrode layer is a laminated structure comprising a plurality of layers.
  • the invention according to claim 2 is characterized in that the configuration according to claim 1 is provided with a buffer layer provided between the dielectric layer and the dielectric protective layer or between the dielectric protective layers.
  • the invention according to claim 3 is characterized in that a constitution using a ceramic as the dielectric protective layer is added to the constitution according to the invention according to claim 1 or 2.
  • At least one base protection layer having a predetermined thickness is provided between the base layer provided on the back side of the electrode layer and the bonding surface of the pedestal, It is characterized in that a laminated structure of a plurality of layers is formed between the bonding surface of the part and the electrode layer.
  • the invention according to claim 5 provides the electrostatic chuck for a vacuum bonding apparatus according to claim 1, 2, 3 or 4 on only one or both of the facing surfaces of a pair of upper and lower holding plates, and this vacuum bonding apparatus. It is characterized in that two substrates are held by suction on the electrostatic chuck for chucking, and both substrates are brought close to each other in a vacuum and pressure-bonded. Effect of the invention
  • At least one dielectric protective layer having a predetermined thickness is provided on the surface of the dielectric layer, and the substrate contact surface of the dielectric protective layer disposed on the outermost surface side.
  • a large amount of foreign matter is entrapped by increasing the distance from the substrate contact surface to the electrode layer by the thickness of the dielectric protective layer by forming a multilayer structure consisting of multiple layers from the electrode layer to the electrode layer.
  • the probability of damage to the electrode layer is reduced, and at the same time, even if the substrate contact surface of the dielectric protective layer is scratched due to the small foreign substance being swallowed, the progress of the crack is suppressed in the dielectric protective layer and the dielectric layer is Even when the structure of the layer is divided while maintaining the entire thickness from the substrate contact surface to the electrode layer substantially the same, the progress of the crack is similarly suppressed by the dielectric protective layer, and the dielectric layer is similarly obtained. It does not reach to.
  • foreign matter is engulfed by providing a buffer layer between the dielectric layer and the dielectric protective layer or between the dielectric protective layers. Even if the crack progresses through the entire dielectric protective layer, it is cut off at the buffer layer, and the crack does not proceed to the next dielectric layer or the next dielectric protective layer.
  • the dielectric protective layer in addition to the effects of the invention of claim 1 or 2, by using ceramic as the dielectric protective layer, the dielectric protective layer itself becomes hard and the hard foreign matter is engulfed. Even then, the dielectric protective layer is not easily damaged. .
  • At least one or more base material protective layers having a predetermined thickness are provided between the base material layer provided on the back surface side of the electrode layer and the base, and the base is attached
  • a large number of foreign particles can be engulfed and the bonding surface of the pedestal part by increasing the distance to the electrode layer by the thickness of the base material protective layer by forming a laminated structure of multiple layers up to the electrode layer.
  • the probability of damage to the electrode layer due to uneven parts such as burrs decreases, and at the same time the crack on the back side of the base material protective layer is scratched by small foreign matter entrapment! It is suppressed to the dielectric layer.
  • the invention of claim 5 is characterized in that the electrostatic chuck for vacuum bonding apparatus is formed on only one or both of the opposing surfaces of the upper and lower pair of holding plates.
  • the electrostatic chuck for vacuum bonding apparatus is provided in the vacuum bonding apparatus.
  • a force to provide at least one dielectric protective layer lc having a predetermined thickness on the surface of the dielectric layer lb, or a predetermined thickness between the base layer 2 and the bonding surface 3a of the pedestal 3 is provided.
  • At least one base protection layer 2b is provided, or one or more dielectric protection layer 1c and base protection layer 2b are respectively provided.
  • the dielectric protective layer lc of the single-layer structure shown in the example is a surface of the dielectric layer lb.
  • two or more layers of dielectric protective layer lc having a single layer structure are laminated, not shown, and the substrate is contacted by the thickness of this dielectric protective layer lc. surface! The distance from / to the electrode layer la is increased.
  • the dielectric protective layer 1c is divided into a plurality of layers, and the substrate contact surface is not shown. It may be multilayered while maintaining the overall thickness up to about the same.
  • Ceramics such as 2 3, SiC, A1N, Zr O, etc.
  • an inorganic material other than the above or an insulating organic material such as polyimide, polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or the like.
  • PEEK polyetheretherketone
  • PEN polyethylene naphthalate
  • the buffer layer Id is an adhesive layer made of a pressure sensitive adhesive or an adhesive, but the buffer layer Id may be made of a material other than the pressure sensitive adhesive or the adhesive.
  • a base layer 2 having a single-layer structure including an insulating material such as an insulating material with an adhesive layer 2a such as an adhesive or an adhesive interposed therebetween is used.
  • the back surface of the base material layer 2 and the bonding surface 3a of the pedestal portion 3 are attached so as to sandwich the adhesive layer 4 such as an adhesive or an adhesive.
  • the above-described electrostatic chuck A for a vacuum bonding apparatus is, for example, a vacuum bonding apparatus for manufacturing a liquid crystal display (LCD), a plasma display (PDP), etc. Opposite holding plates B, C, etc., with force placed on the surface plate etc. It is incorporated by attaching it to the entire surface or a part of only one side or both sides of the surface, and a substrate W such as TFT glass or CF glass is adsorbed and held as the substrate W on the electrostatic chuck A for vacuum bonding device. After positioning and moving the pair of upper and lower substrates W, W relative to each other in the X and Y directions, the two are approached and crimped in vacuum.
  • LCD liquid crystal display
  • PDP plasma display
  • FIG. 1 (a) the upper and lower electrostatic bonding chucks A and A in the atmosphere are shown in FIG. A closed space S which can be opened and closed vertically between the upper and lower holding plates B and C is formed so as to surround the upper and lower substrates W and W, respectively.
  • S After the inside of S reaches a predetermined degree of vacuum, adjust the relative movement of upper and lower holding plates B and C and electrostatic chucks A and A for vacuum bonding device in the direction of arrow so that upper and lower substrates W and W Alignment is performed.
  • the upper and lower holding plates B and C are brought closer to each other, or the upper substrate W is forcibly peeled off from the upper electrostatic chuck A for vacuum bonding device.
  • the liquid crystal is sealed between the two by instantaneous pressure bonding to the above annular adhesive (sealing material) X, and then the atmosphere in the closed space S is returned to atmospheric pressure, whereby both substrates
  • the pressure difference between the two substrates W and W is pressurized to a predetermined gap to complete the bonding process.
  • the electrostatic chuck A for each vacuum bonding device is provided with at least one dielectric protective layer lc having a predetermined thickness on the surface of the dielectric layer lb, and the substrate contact surface of the dielectric protective layer lc disposed on the outermost surface side. If the distance from the substrate contact surface to the electrode layer la is increased by the thickness of the dielectric protective layer lc in a multi-layered laminated structure with a distance of up to the electrode layer la, the substrate contact surface is When the substrate W is brought into contact with and held by suction, the large foreign matter which has entered the surface of the substrate W, for example, adheres to the surface of the substrate W and the substrate contact surface of the dielectric protective layer lc disposed on the surface and the outermost surface.
  • the thickness of the dielectric protective layer lc reduces the probability of damage to the electrode layer la.
  • the dielectric protective layer lc suppresses the progress of the crack and dielectric Because it does not reach the layer la, the probability of such failure modes is extremely low.
  • the small particle is entrapped and the substrate contact surface is damaged.
  • the progress of the crack is suppressed by the multi-layered dielectric protective layer lc, and the dielectric layer la is not reached.
  • Example 2 the dielectric protective layer lc and the buffer layer Id of Example 1 shown in FIGS. 1 (a) and 1 (b) shown in FIGS.
  • a base protection of a predetermined thickness is provided between the base layer 2 provided on both sides of the adhesive layer 2a on the back side of the electrode layer la and the bonding surface 3a of the pedestal portion 3.
  • At least one or more layers 2b are provided, and the structure from the bonding surface 3a of the pedestal portion 3 to the electrode layer la has a laminated structure of a plurality of layers is the embodiment shown in FIGS. 1 (a) and (b).
  • the other configuration is the same as Example 1.
  • the base material protective layer 2b is formed into a single layer structure from the same material as the dielectric protective layer lc, and in the case of the illustrated example, the bonding surface 3a of the back surface of the base material layer 2 and the pedestal portion 3 Only between Although there is room in the overall thickness dimension of the electrostatic chuck A for a vacuum bonding apparatus, although two layers or more of the base material protective layer 2b having a single layer structure are laminated, The distance from the bonding surface 3a of the pedestal 3 to the electrode layer la is increased by the thickness of the base material protective layer 2b.
  • the base protection layer 2 b is divided into a plurality of layers (not shown) so that the base portion 3 is not shown. It may be multilayered while maintaining the thickness from the bonding surface 3a to the electrode layer la substantially the same.
  • the buffer layer 2c is an adhesive layer made of a pressure sensitive adhesive or an adhesive, but the buffer layer 2c may be made of a material other than the pressure sensitive adhesive or the adhesive.
  • the base layer protective layer 2b suppresses the progress of the crack and does not reach the dielectric layer la. The probability of such failure modes is extremely low.
  • Example 3 corresponds to dielectric protective layer lc and buffer layer Id of Example 1 shown in FIGS. 1 (a) and (b) as shown in FIGS. 3 (a) and (b), and FIG. (a)
  • the structure which provided both the base material protective layer 2b and the buffer layer 2c of Example 2 shown to (b) differs from the said Example 1 and Example 2, and the other structure is Example 1 and it differs. And the same as in Example 2.
  • a single layer dielectric protective layer lc is stacked on the surface of the dielectric layer lb.
  • the present invention is not limited thereto, and two or more single layer dielectric protective layer lc may be provided.
  • the distance from the substrate contact surface to the electrode layer la is increased by the thickness of the dielectric protective layer 1c, or the dielectric protective layer 1c is divided into a plurality of layers to form the substrate contact surface. Layering may be performed while maintaining the same overall thickness to the layer la.
  • the present invention is not limited thereto.
  • the distance from the bonding surface 3a of the pedestal 3 to the electrode layer la is increased by the thickness of the base material protective layer 2b, or the base material protective layer 2b is It may be divided into a plurality of layers, and may be multilayered while maintaining the thickness from the bonding surface 3a of the pedestal portion 3 to the electrode layer la substantially the same.
  • Figs. 3 (a) and 3 (b) what is shown in Figs. 3 (a) and 3 (b) is the prevention of damage to the electrostatic adsorption function unit 1 due to the foreign matter being caught between the substrate W and the foreign matter being caught during manufacture or the pedestal part. At the same time, it is possible to simultaneously prevent breakage of the electrostatic attraction function unit 1 by the uneven portion such as burrs on the bonding surface 3a of 3.
  • the electrostatic chuck A for a vacuum bonding apparatus is incorporated into the vacuum bonding apparatus and a glass substrate is held by suction as the substrate W
  • the present invention is not limited thereto. Even in the case where a substrate made of a material other than glass is adsorbed and held, the same function and effect as those of the above-described embodiment can be obtained.
  • the vacuum bonding apparatus has shown the case where the substrate W is held by suction only with the electrostatic chuck A.
  • the present invention is not limited to this.
  • a suction / adsorption means or an adhesion holding means may be provided to assist the holding of the substrate W in the atmosphere.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

[PROBLEMS] To prevent breakage of an electrostatic attraction functioning part due to biting of a foreign material. [MEANS FOR SOLVING PROBLEMS] At least one layer of a dielectric protecting layer (1c) having a prescribed thickness is provided on a surface of a dielectric layer (1b). A portion between a board contact plane (1’) of the dielectric protecting layer (1c) arranged on the outermost side and an electrode layer (1a) is permitted to have a laminate structure composed of a plurality of layers. A distance between the board contact plane (1’) and the electrode layer (1a) is increased by the thickness of the dielectric protecting layer (1c). Thus, probability of causing damage to the electrode layer (1a) due to biting of a large foreign material is reduced, and at the same time, even when the board contact plane (1’) of the dielectric protecting layer (1c) is scratched by biting of a small foreign material, a crack does not reach the dielectric layer (1a) by being prevented from advancing by the dielectric protecting layer (1c). When the layer constitution is divided while maintaining the entire thickness from the board contact plane (1’) to the electrode layer (1a) substantially the same, the crack does not reach the dielectric layer (1a) by being prevented from advancing by the dielectric protecting layer (1c) in the same manner.

Description

明 細 書  Specification
真空貼り合わせ装置用静電チャック及びそれを用いた真空貼り合わせ装 置  Electrostatic chuck for vacuum bonding apparatus and vacuum bonding apparatus using the same
技術分野  Technical field
[0001] 本発明は、例えば液晶ディスプレー(LCD)やプラズマディスプレー(PDP)などの フラットパネルディスプレーの製造過程にぉ 、て、 CFガラスや TFTガラスなどの基板 を真空中で吸着保持して貼り合わせる際に使用する真空貼り合わせ装置用静電チヤ ック、及びそれを用いた真空貼り合わせ装置に関する。  The present invention relates to a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP), which is attached to a substrate such as CF glass or TFT glass by suction. The present invention relates to an electrostatic chuck for a vacuum bonding apparatus used in the case and a vacuum bonding apparatus using the same.
詳しくは、平板状の電極層を誘電層で覆い、この誘電層と基板とを接触させて吸着 保持する真空貼り合わせ装置用静電チャック、或いは電極層の表面に誘電層が積 層された静電吸着機能部と、この電極層の裏面に配置される台座部とを貼り合わせ てなる真空貼り合わせ装置用静電チャック、及び、それらを用いた真空貼り合わせ装 置に関する。  Specifically, a flat electrode layer is covered with a dielectric layer, and an electrostatic chuck for a vacuum bonding apparatus that holds the dielectric layer in contact with the substrate and holds the same in contact with the substrate, or a dielectric layer deposited on the surface of the electrode layer. The present invention relates to an electrostatic chuck for a vacuum bonding apparatus formed by bonding an electroadhesive function unit and a pedestal disposed on the back surface of the electrode layer, and a vacuum bonding apparatus using the same.
背景技術  Background art
[0002] 従来、この種の真空貼り合わせ装置用静電チャックとして、基板が接触する誘電層  Conventionally, as an electrostatic chuck for a vacuum bonding apparatus of this type, a dielectric layer with which a substrate is in contact
(誘電体)と、それに電界を供給する電極層 (電極部)とが積層された静電吸着機能 部と、その土台となる台座部 (支持基材)とを貼り合わせた板状の積層構造体カゝらなり 、上記誘電層の材料として使用したポリイミドなどの絶縁性有機材料が吸水性を有す るため、真空貼り合わせ装置 (フラットパネル用基板の貼り合わせ装置)に組み込み、 真空中で使用すると水分などのガスを発生し、それに伴い基板の吸着が維持できな くなつて、基板の落下原因となったが、この誘電層の表面を発ガス性及びガス透過性 の低いポリエチレンフィルム力 なる誘電膜で被覆することにより、これら誘電体の表 面と雰囲気とが遮断されて、真空中の使用時におけるガスの発生を防止させ、基板 の自重落下を防止したものがある (例えば、特許文献 1参照)。  A plate-like laminated structure in which an electrostatic adsorption function portion in which (dielectric) and an electrode layer (electrode portion) for supplying an electric field thereto are laminated and a pedestal portion (supporting base material) serving as a base thereof Because the insulating organic material such as polyimide used as the material of the dielectric layer has water absorbency, it is incorporated into a vacuum bonding apparatus (a bonding apparatus for flat panel substrates), and the material is incorporated into a vacuum bonding apparatus. When used, it generates moisture and other gases, and the adsorption of the substrate can not be maintained accordingly, causing the substrate to fall. The surface of this dielectric layer is a polyethylene film having low gasification and low gas permeability. By covering with a dielectric film, the surface of the dielectric and the atmosphere are shut off to prevent the generation of gas during use in vacuum, thereby preventing the substrate from falling by its own weight (for example, a patent). Reference 1).
[0003] 特許文献 1 :特開 2003— 324144号公報(第 2— 5頁、図 1、図 4) Patent Document 1: Japanese Patent Application Laid-Open No. 2003-324144 (Page 2-5, FIG. 1, FIG. 4)
発明の開示  Disclosure of the invention
発明が解決しょうとする課題 [0004] しかし乍ら、このような従来の真空貼り合わせ装置用静電チャックでは、電極層の表 面にポリイミドなど力もなる単層構造の誘電層とポリエチレンフィルムなどの非常に薄 い誘電膜とを重ねた積層構造であるため、その表面を基板に接触させて吸着保持す る際、これら両者間に異物が基板の表面に付着するなどして侵入すると、この異物の 周囲に発生した静電吸着力により誘電膜や誘電層の中に嚙み込んでしま!ヽ、その結 果、薄い誘電膜を破って誘電層の表面が傷付くだけでなぐ異物が大きい場合には 電極層にダメージを与えて静電吸着機能部が破損し易 ヽと ヽぅ問題があった。 更に、このような異物の嚙み込みによる傷は、微小な異物で生じた傷であっても時 間経過により誘電層の厚さ方向へ徐々に進行してクラックとなり、しかも誘電層が単 層構造であるため、表面側からのクラックが直接、電極層まで達してしまう。 Problem that invention tries to solve However, in such a conventional electrostatic bonding apparatus for vacuum bonding apparatus, the surface of the electrode layer is a single-layer dielectric layer that also has a force such as polyimide and a very thin dielectric film such as a polyethylene film. When the surface is brought into contact with the substrate and held by suction, if foreign matter adheres to the surface of the substrate and penetrates between them, electrostatics generated around the foreign matter will occur. We are absorbed into dielectric film and dielectric layer by adsorption power! As a result, if the foreign material is large by breaking the thin dielectric film and damaging the surface of the dielectric layer, the electrode layer is damaged and the electrostatic adsorption functional part is easily damaged. there were. Furthermore, even if the scratch caused by such foreign matter is a scratch caused by a minute foreign matter, it gradually progresses in the thickness direction of the dielectric layer over time and becomes a crack, and the dielectric layer becomes a single layer. Because of the structure, cracks from the surface side directly reach the electrode layer.
特に、このような従来の静電チャックを真空貼り合わせ装置に組み込んで、一対の ガラス基板を吸着保持したまま真空中で接近して圧着させる場合には、多数の基板 を繰り返して接触吸着させると共に基板のプレス工程があるため、このプレス工程で 誘電層のクラックが一気に進行して電極層が露出し、この状態で電極層へ通電する と、真空中のあるタイミングでプラズマ放電を引き起こし、基板へのダメージや静電吸 着力の低下につながるという問題もあった。  In particular, when such a conventional electrostatic chuck is incorporated into a vacuum bonding apparatus and a pair of glass substrates are closely held in vacuum while being held by suction, a large number of substrates are repeatedly brought into contact and adsorbed. Since there is a pressing process of the substrate, cracks in the dielectric layer proceed at a stretch in this pressing process to expose the electrode layer, and when current is supplied to the electrode layer in this state, plasma discharge is caused at a certain timing in vacuum, The problem is that it leads to damage of
また、上述した誘電層を備えた真空貼り合わせ装置用静電チャックでは、電極層の 裏面側に粘着材又は接着剤などを用いて単層構造の基材層が設けられ、この基材 層の裏面と台座部とを粘着材又は接着剤などを用いて貼り合わせているが、その製 造工程において基材層の裏面と台座部とを貼り合わせる際、これら両者間に異物を 嚙み込んだり、また台座部の貼り合わせ面にノ リなどの凹凸部分があると、基材層を 介して電極層にダメージを与えて静電吸着機能部が破損することがある。  Further, in the electrostatic chuck for a vacuum bonding apparatus provided with the dielectric layer described above, a base material layer having a single-layer structure is provided on the back surface side of the electrode layer using an adhesive or an adhesive. Although the back surface and the pedestal portion are bonded using an adhesive or an adhesive agent, when the back surface of the base material layer and the pedestal portion are bonded together in the manufacturing process, foreign matter may be entrapped between these both. Also, if there is an uneven portion such as solder on the bonding surface of the pedestal portion, the electrode layer may be damaged via the base material layer to damage the electrostatic adsorption function portion.
この場合には、主に電極層とアース電位となる台座部との間で抵抗値が低下し、こ の間で異常電流が流れることによって、静電吸着力の低下につながるという問題があ つた o  In this case, there is a problem that the resistance value mainly decreases between the electrode layer and the pedestal portion which is at the ground potential, and an abnormal current flows between them, leading to a decrease in the electrostatic attraction. o
[0005] 本発明のうち請求項 1、 4記載の発明は、異物の嚙み込みによる静電吸着機能部 の破損を防止することを目的としたものである。  Among the present inventions, the inventions set forth in claims 1 and 4 have an object to prevent damage to the electrostatic adsorption functional part due to the intrusion of foreign matter.
請求項 2記載の発明は、請求項 1に記載の発明の目的に加えて、クラックの進行を 完全に防止することを目的としたものである。 In addition to the object of the invention according to claim 1, the invention according to claim 2 It is intended to be completely prevented.
請求項 3記載の発明は、請求項 1または 2に記載の発明の目的に加えて、誘電保 護層のクラック発生率を低下させることを目的としたものである。  In addition to the object of the invention described in claim 1 or 2, the invention described in claim 3 aims to reduce the crack generation rate of the dielectric protective layer.
請求項 5記載の発明は、請求項 1、 2、 3または 4に記載の発明の目的に加えて、真 空中におけるプラズマ放電の発生を防止することを目的としたものである。  The invention according to claim 5 is intended to prevent the occurrence of plasma discharge in the air in addition to the object of the invention according to claims 1, 2, 3 or 4.
課題を解決するための手段  Means to solve the problem
[0006] 前述した目的を達成するために、本発明のうち請求項 1記載の発明は、誘電層の 表面に所定厚さの誘電保護層を少なくとも一層以上設けて、その最も表面側に配置 された誘電保護層の基板接触面から電極層までの間を複数層からなる積層構造に したことを特徴とするものである。 [0006] In order to achieve the above object, the invention according to claim 1 of the present invention is characterized in that at least one or more dielectric protective layers of a predetermined thickness are provided on the surface of the dielectric layer and disposed on the most surface side. The structure from the substrate contact surface of the dielectric protective layer to the electrode layer is a laminated structure comprising a plurality of layers.
ここで言う「所定厚さの誘電保護層」とは、嚙み込む恐れのある異物より大きいことが 好ましい。  The "dielectric protective layer having a predetermined thickness" referred to herein is preferably larger than a foreign substance which may be swallowed.
請求項 2記載の発明は、請求項 1記載の発明の構成に、前記誘電層と誘電保護層 との間又は誘電保護層同士の間に緩衝層を設けた構成を加えたことを特徴とする。 請求項 3記載の発明は、請求項 1または 2記載の発明の構成に、前記誘電保護層 としてセラミックスを用いた構成を加えたことを特徴とする。  The invention according to claim 2 is characterized in that the configuration according to claim 1 is provided with a buffer layer provided between the dielectric layer and the dielectric protective layer or between the dielectric protective layers. . The invention according to claim 3 is characterized in that a constitution using a ceramic as the dielectric protective layer is added to the constitution according to the invention according to claim 1 or 2.
請求項 4記載の発明は、電極層の裏面側に設けられた基材層と台座部の貼り合わ せ面との間に、所定厚さの基材保護層を少なくとも一層以上設けて、この台座部の貼 り合わせ面カゝら電極層までの間を複数層の積層構造にしたことを特徴とする。  According to the fourth aspect of the present invention, at least one base protection layer having a predetermined thickness is provided between the base layer provided on the back side of the electrode layer and the bonding surface of the pedestal, It is characterized in that a laminated structure of a plurality of layers is formed between the bonding surface of the part and the electrode layer.
請求項 5記載の発明は、請求項 1、 2、 3または 4記載の真空貼り合わせ装置用静電 チャックを、上下一対の保持板の対向面の両方又は一方のみに設け、この真空貼り 合わせ装置用静電チャックに二枚の基板を吸着保持して対向させ、これら両基板を 真空中で接近して圧着させることを特徴とするものである。 発明の効果  The invention according to claim 5 provides the electrostatic chuck for a vacuum bonding apparatus according to claim 1, 2, 3 or 4 on only one or both of the facing surfaces of a pair of upper and lower holding plates, and this vacuum bonding apparatus. It is characterized in that two substrates are held by suction on the electrostatic chuck for chucking, and both substrates are brought close to each other in a vacuum and pressure-bonded. Effect of the invention
[0007] 本発明のうち請求項 1記載の発明は、誘電層の表面に所定厚さの誘電保護層を少 なくとも一層以上設け、その最も表面側に配置された誘電保護層の基板接触面から 電極層までの間を複数層からなる積層構造にして、これら基板接触面から電極層ま での距離を上記誘電保護層の厚み分だけ広げることにより、大きな異物の嚙み込み に伴う電極層へのダメージの確率が減少すると同時に、小さい異物の嚙み込みで誘 電保護層の基板接触面が傷付 ヽても、誘電保護層でクラックの進行が抑えられて誘 電層まで至らず、また該基板接触面から電極層までの全体厚さを略同じに維持しつ つ層の構成を分割した場合も、同様に誘電保護層でクラックの進行が抑えられて誘 電層まで至らない。 Among the present inventions, according to claim 1 of the present invention, at least one dielectric protective layer having a predetermined thickness is provided on the surface of the dielectric layer, and the substrate contact surface of the dielectric protective layer disposed on the outermost surface side. A large amount of foreign matter is entrapped by increasing the distance from the substrate contact surface to the electrode layer by the thickness of the dielectric protective layer by forming a multilayer structure consisting of multiple layers from the electrode layer to the electrode layer. At the same time, the probability of damage to the electrode layer is reduced, and at the same time, even if the substrate contact surface of the dielectric protective layer is scratched due to the small foreign substance being swallowed, the progress of the crack is suppressed in the dielectric protective layer and the dielectric layer is Even when the structure of the layer is divided while maintaining the entire thickness from the substrate contact surface to the electrode layer substantially the same, the progress of the crack is similarly suppressed by the dielectric protective layer, and the dielectric layer is similarly obtained. It does not reach to.
従って、異物の嚙み込みによる静電吸着機能部の破損を防止することができる。 その結果、電極層の表面に単層構造の誘電層と薄い誘電膜とを重ねた積層構造 である従来のものに比べ、耐久性が向上して長期に亘り使用できて、信頼性の向上 が図れる。  Therefore, damage to the electrostatic attraction function unit due to the entrapment of foreign matter can be prevented. As a result, the durability is improved and can be used for a long time, and the reliability is improved, as compared with the conventional one having a laminated structure in which a single-layer dielectric layer and a thin dielectric film are stacked on the surface of an electrode layer. It can be done.
[0008] 請求項 2の発明は、請求項 1の発明の効果に加えて、誘電層と誘電保護層との間 又は誘電保護層同士の間に緩衝層を設けることにより、異物の嚙み込みでクラックが 誘電保護層全体に亘つて進行しても緩衝層で断ち切られ、次の誘電層又は次の誘 電保護層までクラックが進行しな 、。  According to the invention of claim 2, in addition to the effect of the invention of claim 1, foreign matter is engulfed by providing a buffer layer between the dielectric layer and the dielectric protective layer or between the dielectric protective layers. Even if the crack progresses through the entire dielectric protective layer, it is cut off at the buffer layer, and the crack does not proceed to the next dielectric layer or the next dielectric protective layer.
従って、クラックの進行を完全に防止することができる。  Therefore, the progress of the crack can be completely prevented.
その結果、異物の嚙み込みによる故障発生率を更に低減ィ匕できる。  As a result, it is possible to further reduce the failure rate due to the intrusion of foreign matter.
[0009] 請求項 3の発明は、請求項 1または 2の発明の効果に加えて、誘電保護層としてセ ラミックスを用いることにより、誘電保護層自体が硬くなつて、硬い異物を嚙み込んだ 時でも誘電保護層が傷付き難い。。 According to the invention of claim 3, in addition to the effects of the invention of claim 1 or 2, by using ceramic as the dielectric protective layer, the dielectric protective layer itself becomes hard and the hard foreign matter is engulfed. Even then, the dielectric protective layer is not easily damaged. .
従って、誘電保護層のクラック発生率を低下させることができる。  Therefore, the crack generation rate of the dielectric protective layer can be reduced.
その結果、異物の嚙み込みによる故障発生率を更に低減ィ匕できる。  As a result, it is possible to further reduce the failure rate due to the intrusion of foreign matter.
[0010] 請求項 4の発明は、電極層の裏面側に設けられた基材層と台座部との間に、所定 厚さの基材保護層を少なくとも一層以上設けて、その台座部の貼り合わせ面カも電 極層までの間を複数層の積層構造にして、電極層までの距離を基材保護層の厚み 分だけ広げることにより、大きな異物の嚙み込みや台座部の貼り合わせ面にバリなど の凹凸部分による電極層へのダメージ確率が減少すると同時に、小さい異物の嚙み 込みで基材保護層の台座側裏面が傷付!、ても、基材保護層でクラックの進行が抑え られて誘電層まで至らな ヽ。 [0010] In the invention of claim 4, at least one or more base material protective layers having a predetermined thickness are provided between the base material layer provided on the back surface side of the electrode layer and the base, and the base is attached A large number of foreign particles can be engulfed and the bonding surface of the pedestal part by increasing the distance to the electrode layer by the thickness of the base material protective layer by forming a laminated structure of multiple layers up to the electrode layer. At the same time, the probability of damage to the electrode layer due to uneven parts such as burrs decreases, and at the same time the crack on the back side of the base material protective layer is scratched by small foreign matter entrapment! It is suppressed to the dielectric layer.
従って、異物の嚙み込みによる静電吸着機能部の破損を防止することができる。 その結果、電極層とアース電位となる台座部との間で異常電流が流れることで静電 吸着力の低下が発生しないから、安定した基板の吸着保持を長期に亘つて実現でき る。 Therefore, damage to the electrostatic attraction function unit due to the entrapment of foreign matter can be prevented. As a result, since the decrease in electrostatic adsorption does not occur due to the flow of abnormal current between the electrode layer and the pedestal which is at the ground potential, stable adsorption and holding of the substrate can be realized over a long period of time.
[0011] 請求項 5の発明は請求項 1、 2、 3または 4の発明の効果に加えて、真空貼り合わせ 装置用静電チャックを、上下一対の保持板の対向面の両方又は一方のみに設け、こ の真空貼り合わせ装置用静電チャックに基板を吸着保持して対向させ、これら両基 板を真空中で接近して圧着させる真空貼り合わせ装置において、真空貼り合わせ装 置用静電チャックの基板接触面と基板との間に異物を嚙み込むことで、基板接触面 が傷付きクラックが発生しても電極層まで至らず、露出状態にならない。  [0011] In addition to the effects of the inventions of claim 1, 2, 3 or 4, the invention of claim 5 is characterized in that the electrostatic chuck for vacuum bonding apparatus is formed on only one or both of the opposing surfaces of the upper and lower pair of holding plates. In the vacuum bonding apparatus, provided that the substrates are held by suction and opposed to the electrostatic chuck for vacuum bonding apparatus, and these two substrates are closely approached in a vacuum and pressure bonded, the electrostatic chuck for vacuum bonding apparatus is provided. By trapping foreign matter between the substrate contact surface of the substrate and the substrate, even if a crack with a scratch is generated on the substrate contact surface, it does not reach the electrode layer and does not become exposed.
従って、真空中におけるプラズマ放電の発生を防止することができる。  Therefore, generation of plasma discharge in vacuum can be prevented.
その結果、プレス工程で誘電層のクラックが一気に進行して電極層が露出し易い従 来のものに比べ、プラズマ放電による基板へのダメージゃ静電吸着力の低下を防止 できる。  As a result, damage to the substrate due to plasma discharge and a decrease in electrostatic attraction can be prevented, as compared with the conventional one in which cracks in the dielectric layer rapidly advance in the pressing step and the electrode layer is easily exposed.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0012] 本発明の真空貼り合わせ装置用静電チャック Aは、図 1〜図 3に示す如ぐ電極層 laの表面に誘電層 lbが積層された静電吸着機能部 1と、この電極層 laの裏面側に 設けられた基材層 2と、この基材層 2の裏面に貼り合わせた台座部 3とからなる板状の 積層構造体であり、上記誘電層 lbは例えばポリイミドなどの絶縁性有機材料で単層 構造に形成される。 The electrostatic chuck A for a vacuum bonding apparatus according to the present invention is an electrostatic chucking portion 1 in which a dielectric layer lb is laminated on the surface of an electrode layer la as shown in FIGS. 1 to 3, and this electrode layer The dielectric layer lb is, for example, an insulating material such as polyimide or the like, which is a plate-like laminated structure comprising a base material layer 2 provided on the back surface side of la and a pedestal 3 bonded to the back surface of the base material layer 2. Organic materials to form a single layer structure.
[0013] そして、上記誘電層 lbの表面に所定厚さの誘電保護層 lcを少なくとも一層以上設 ける力、又は上記基材層 2と台座部 3の貼り合わせ面 3aとの間に、所定厚さの基材保 護層 2bを少なくとも一層以上設けるか、或いは上記誘電保護層 lcと基材保護層 2b を夫々一層以上設けている。  Then, a force to provide at least one dielectric protective layer lc having a predetermined thickness on the surface of the dielectric layer lb, or a predetermined thickness between the base layer 2 and the bonding surface 3a of the pedestal 3 is provided. At least one base protection layer 2b is provided, or one or more dielectric protection layer 1c and base protection layer 2b are respectively provided.
以下、本発明の各実施例を図面に基づいて説明する。  Hereinafter, embodiments of the present invention will be described based on the drawings.
実施例 1  Example 1
[0014] この実施例 1は図 1 (a) (b)に示す如ぐ誘電層 lbの表面に誘電保護層 lcを少なく とも一層以上設け、その最も表面側に配置された誘電保護層 lcの表面である基板 接触面 カゝら電極層 laまでの間を複数層カゝらなる積層構造にして、これら基板接 触面 から電極層 laまでの距離を誘電保護層 lcの厚み分だけ広げるか、或いは 該基板接触面 カゝら電極層 laまでの全体厚さを略同じに維持しつつ層の構成を 分割した場合を示すものである。 In Example 1, at least one dielectric protective layer lc is provided on the surface of the dielectric layer lb as shown in FIGS. 1 (a) and 1 (b), and the dielectric protective layer lc disposed on the most surface side is provided. The surface of the substrate is the contact surface of the substrate, and the contact layer between the electrode and the electrode layer la is a multi-layered laminated structure. The distance from the touch surface to the electrode layer la is increased by the thickness of the dielectric protective layer lc, or the structure of the layer is divided while maintaining the overall thickness to the substrate contact surface ca. It shows the case.
[0015] これら誘電層 lb及び誘電保護層 lcの全体が厚くなると、一般的に吸着力が低下 する傾向にあるため、図示例の如ぐ単層構造の誘電保護層 lcを誘電層 lbの表面 に一層のみ積層するか、又は吸着力に余裕が有る場合には、図示せぬが単層構造 の誘電保護層 lcを二層以上積層して、この誘電保護層 lcの厚み分だけ上記基板 接触面!/ から電極層 laまでの距離を広げるようにして ヽる。  [0015] When the total thickness of the dielectric layer lb and the dielectric protective layer lc increases, the adsorptive power generally tends to decrease. Therefore, the dielectric protective layer lc of the single-layer structure shown in the example is a surface of the dielectric layer lb. In the case where there is only a single layer, or if there is a surplus in adsorption power, two or more layers of dielectric protective layer lc having a single layer structure are laminated, not shown, and the substrate is contacted by the thickness of this dielectric protective layer lc. surface! The distance from / to the electrode layer la is increased.
[0016] また、吸着する基板 Wとの関係で吸着力を低下させたくない場合には、図示せぬ が誘電保護層 lcを複数層に分割して、上記基板接触面 カゝら電極層 laまでの全 体厚さを略同じに維持しつつ多層化しても良い。  Further, when it is not desired to reduce the adsorption force due to the relationship with the substrate W to be adsorbed, the dielectric protective layer 1c is divided into a plurality of layers, and the substrate contact surface is not shown. It may be multilayered while maintaining the overall thickness up to about the same.
[0017] 上記誘電保護層 lcの材料としては、 A1 0  A material of the dielectric protective layer lc is A10.
2 3、 SiC、 A1N、 Zr Oなどのセラミックスやそ  Ceramics such as 2 3, SiC, A1N, Zr O, etc.
2 3  twenty three
れ以外の無機材料か、又はポリイミド、ポリエーテルエーテルケトン (PEEK)、ポリェチ レンナフタレート (PEN)などの絶縁性有機材料を用いることが好ま 、。  It is preferable to use an inorganic material other than the above, or an insulating organic material such as polyimide, polyetheretherketone (PEEK), polyethylene naphthalate (PEN) or the like.
セラミックス製の誘電保護層 lcを積層した場合には、誘電保護層 lc自体が硬くな つて、硬い異物を嚙み込んだ時でも誘電保護層 lcが傷付き難ぐポリイミドなどの有 機材料製の誘電保護層 lcを積層した場合には、電気的特性に優れる。  When the dielectric protective layer lc made of ceramic is laminated, the dielectric protective layer lc itself is hard, and the dielectric protective layer lc is made of an organic material such as polyimide which is difficult to be scratched even when a hard foreign object is swallowed. When the dielectric protective layer lc is stacked, the electrical characteristics are excellent.
[0018] 更に、上記誘電層 lbと誘電保護層 lcとの間又は誘電保護層 lc同士の間には、緩 衝層 Idを設けることが好ま 、。  Further, it is preferable to provide a buffer layer Id between the dielectric layer lb and the dielectric protective layer lc or between the dielectric protective layers lc.
本実施例の場合には、この緩衝層 Idが粘着材又は接着剤などカゝらなる接着層で あるが、粘着材又は接着剤以外の材質で緩衝層 Idを構成しても良い。  In the case of this embodiment, the buffer layer Id is an adhesive layer made of a pressure sensitive adhesive or an adhesive, but the buffer layer Id may be made of a material other than the pressure sensitive adhesive or the adhesive.
[0019] また、前記電極層 laの裏面側には、粘着材又は接着剤などの接着層 2aを挟んで、 絶縁材料などカゝらなる単層構造の基材層 2が該電極層 laを被覆するように設けられ 、この基材層 2の裏面と台座部 3の貼り合わせ面 3aとが粘着材又は接着剤などの接 着層 4を挟んで貼り付けられる。  In addition, on the back surface side of the electrode layer la, a base layer 2 having a single-layer structure including an insulating material such as an insulating material with an adhesive layer 2a such as an adhesive or an adhesive interposed therebetween is used. The back surface of the base material layer 2 and the bonding surface 3a of the pedestal portion 3 are attached so as to sandwich the adhesive layer 4 such as an adhesive or an adhesive.
[0020] そして、上述した真空貼り合わせ装置用静電チャック Aは、例えば液晶ディスプレ 一 (LCD)やプラズマディスプレー(PDP)などを製造するための真空貼り合わせ装 置において、上下方向へ対向して配置された定盤など力もなる保持板 B, Cの対向 面の両方又は一方のみの略全面或いは一部に取り付けることで組み込まれ、該真空 貼り合わせ装置用静電チャック Aに基板 Wとして、例えば TFTガラスや CFガラスなど のガラス基板を吸着保持させると共に、これら上下一対の基板 W, Wを相対的に XY Θ方向へ調整移動して位置決めを行った後に、両者を真空中で接近して圧着させる The above-described electrostatic chuck A for a vacuum bonding apparatus is, for example, a vacuum bonding apparatus for manufacturing a liquid crystal display (LCD), a plasma display (PDP), etc. Opposite holding plates B, C, etc., with force placed on the surface plate etc. It is incorporated by attaching it to the entire surface or a part of only one side or both sides of the surface, and a substrate W such as TFT glass or CF glass is adsorbed and held as the substrate W on the electrostatic chuck A for vacuum bonding device. After positioning and moving the pair of upper and lower substrates W, W relative to each other in the X and Y directions, the two are approached and crimped in vacuum.
[0021] 上記真空貼り合わせ装置の作動を図示例に従って詳しく説明すれば、図 1 (a)に示 す如ぐ大気中で上下の真空貼り合わせ装置用静電チャック A, Aに二枚のガラス基 板 W, Wを夫々吸着して保持させ、上下保持板 B, Cの接近移動によって両者間に 上下へ開閉自在な閉空間 Sが上下基板 W, Wを囲むように区画形成され、この閉空 間 S内が所定の真空度に達してから、上下保持板 B, C及び真空貼り合わせ装置用 静電チャック A, Aを相対的に ΧΥ Θ方向へ調整移動して、上下基板 W, W同士の位 置合わせが行われる。 The operation of the above vacuum bonding apparatus will be described in detail according to an example shown in the drawings. As shown in FIG. 1 (a), the upper and lower electrostatic bonding chucks A and A in the atmosphere are shown in FIG. A closed space S which can be opened and closed vertically between the upper and lower holding plates B and C is formed so as to surround the upper and lower substrates W and W, respectively. After the inside of S reaches a predetermined degree of vacuum, adjust the relative movement of upper and lower holding plates B and C and electrostatic chucks A and A for vacuum bonding device in the direction of arrow so that upper and lower substrates W and W Alignment is performed.
その後、図 1 (b)に示す如ぐ上下保持板 B, Cを更に接近させるか、又は上方の真 空貼り合わせ装置用静電チャック Aから上基板 Wを強制的に剥離して下基板 W上の 環状接着剤(シール材) Xへ瞬間的に圧着することにより、両者間に液晶を封止して 重ね合わせ、その後は、閉空間 S内の雰囲気を大気圧に戻し、それにより両基板 W, Wの内外に生じる気圧差で両基板 W, Wの間を所定のギャップまで加圧して貼り合 わせ工程が完了する。  Thereafter, as shown in FIG. 1 (b), the upper and lower holding plates B and C are brought closer to each other, or the upper substrate W is forcibly peeled off from the upper electrostatic chuck A for vacuum bonding device. The liquid crystal is sealed between the two by instantaneous pressure bonding to the above annular adhesive (sealing material) X, and then the atmosphere in the closed space S is returned to atmospheric pressure, whereby both substrates The pressure difference between the two substrates W and W is pressurized to a predetermined gap to complete the bonding process.
[0022] 次に、斯かる真空貼り合わせ装置用静電チャック A及びそれを用いた真空貼り合わ せ装置の作用につ 、て説明する。  Next, the operation of the electrostatic chuck A for a vacuum bonding device and the vacuum bonding device using the same will be described.
各真空貼り合わせ装置用静電チャック Aは、誘電層 lbの表面に所定厚さの誘電保 護層 lcを少なくとも一層以上設け、その最も表面側に配置された誘電保護層 lcの基 板接触面 カゝら電極層 laまでの間を複数層からなる積層構造にして、これら基板 接触面 から電極層 laまでの距離を上記誘電保護層 lcの厚み分だけ広げた場合 には、基板接触面 を基板 Wに接触させて吸着保持する際、基板 Wの表面に付 着するなどして侵入した大きな異物を、これら基板 Wの表面と最も表面側に配置され た誘電保護層 lcの基板接触面 との間に嚙み込んだとしても、誘電保護層 lcの 厚みで電極層 laへのダメージの確率が減少する。 [0023] これと同時に、小さい異物の嚙み込みで最も表面側に配置された誘電保護層 lcの 基板接触面 1' が傷付いても、誘電保護層 lcでクラックの進行が抑えられて誘電層 laまで至らないため、そのような破壊モードの確率としては極端に少なくなる。 The electrostatic chuck A for each vacuum bonding device is provided with at least one dielectric protective layer lc having a predetermined thickness on the surface of the dielectric layer lb, and the substrate contact surface of the dielectric protective layer lc disposed on the outermost surface side. If the distance from the substrate contact surface to the electrode layer la is increased by the thickness of the dielectric protective layer lc in a multi-layered laminated structure with a distance of up to the electrode layer la, the substrate contact surface is When the substrate W is brought into contact with and held by suction, the large foreign matter which has entered the surface of the substrate W, for example, adheres to the surface of the substrate W and the substrate contact surface of the dielectric protective layer lc disposed on the surface and the outermost surface. Even if it sinks in, the thickness of the dielectric protective layer lc reduces the probability of damage to the electrode layer la. [0023] At the same time, even if the substrate contact surface 1 'of the dielectric protective layer lc disposed closest to the surface side is scratched due to entrapment of small foreign matter, the dielectric protective layer lc suppresses the progress of the crack and dielectric Because it does not reach the layer la, the probability of such failure modes is extremely low.
また、上記基板接触面 カゝら電極層 laまでの全体厚さを略同じに維持しつつ層 の構成を分割して多層化した場合には、小さな異物を嚙み込んで基板接触面 が 傷付つ 、ても、多層の誘電保護層 lcでクラックの進行が抑えられて誘電層 laまで至 らない。  In the case where the structure of the layer is divided and multilayered while maintaining the entire thickness substantially the same until the electrode contact layer la, the small particle is entrapped and the substrate contact surface is damaged. However, the progress of the crack is suppressed by the multi-layered dielectric protective layer lc, and the dielectric layer la is not reached.
[0024] その結果、基板 Wとの間の異物嚙み込みによる静電吸着機能部 1の破損を防止で きる。  As a result, it is possible to prevent damage to the electrostatic attraction function unit 1 due to the foreign matter being trapped with the substrate W.
そして、斯カる真空貼り合わせ装置用静電チャック Aを真空貼り合わせ装置に組み 込んだ場合には、該真空貼り合わせ装置用静電チャック Aの基板接触面 1' を基板 Wに接触させて吸着保持する際、これら両者間に異物を嚙み込むことで、基板接触 面 が傷付きクラックが発生しても電極層 laまで至らず、この電極層 laが露出状態 にならな 、ため、真空中におけるプラズマ放電の発生を防止できる。  Then, when such an electrostatic chuck A for vacuum bonding device is incorporated into a vacuum bonding device, the substrate contact surface 1 ′ of the electrostatic chuck A for vacuum bonding device is brought into contact with the substrate W. During adsorption and retention, foreign matter is trapped between the two, so that even if a crack with a scratch is generated on the substrate contact surface, it does not reach the electrode layer la, and this electrode layer la is not exposed, so vacuum It is possible to prevent the occurrence of plasma discharge in the inside.
[0025] 更に、誘電層 lbと誘電保護層 lcとの間力 又は誘電保護層 lc同士の間に緩衝層 Idを設けた場合には、異物の嚙み込みで発生したクラックが誘電保護層 lcの厚さ方 向全体に亘つて進行しても、このクラックは緩衝層 Idで完全に断ち切られ、次の誘電 層 lb又は次の誘電保護層 lcへ連続することはな 、ため、クラックの進行による静電 吸着機能部 1の破損発生率がより確実に低下するという利点がある。 Furthermore, when a buffer layer Id is provided between the dielectric layer lb and the dielectric protective layer lc or between the dielectric protective layer lc, cracks generated due to the inclusion of foreign matter become the dielectric protective layer lc. This crack is completely cut off at the buffer layer Id, and does not continue to the next dielectric layer lb or to the next dielectric protective layer lc, even if it proceeds over the entire thickness direction of the There is an advantage that the rate of occurrence of breakage of the electrostatic attraction function part 1 due to
実施例 2  Example 2
[0026] この実施例 2は、図 2 (a) (b)に示す如ぐ前記図 1 (a) (b)に示した実施例 1の誘電 保護層 lc及び緩衝層 Idを誘電層 lbの表面に設けず、それに代えて、電極層 laの 裏面側に接着層 2aを挟んで設けられた基材層 2と台座部 3の貼り合わせ面 3aとの間 に、所定厚さの基材保護層 2bを少なくとも一層以上設けて、この台座部 3の貼り合わ せ面 3aから電極層 laまでの間を複数層の積層構造にした構成が、前記図 1 (a) (b) に示した実施例 1とは異なり、それ以外の構成は実施例 1と同じものである。  In Example 2, the dielectric protective layer lc and the buffer layer Id of Example 1 shown in FIGS. 1 (a) and 1 (b) shown in FIGS. Instead of providing on the surface, instead, between the base layer 2 provided on both sides of the adhesive layer 2a on the back side of the electrode layer la and the bonding surface 3a of the pedestal portion 3, a base protection of a predetermined thickness is provided. At least one or more layers 2b are provided, and the structure from the bonding surface 3a of the pedestal portion 3 to the electrode layer la has a laminated structure of a plurality of layers is the embodiment shown in FIGS. 1 (a) and (b). Unlike Example 1, the other configuration is the same as Example 1.
[0027] この基材保護層 2bは、前記誘電保護層 lcと同様な材料で単層構造に成形され、 図示例の場合には、基材層 2の裏面と台座部 3の貼り合わせ面 3aとの間に一層のみ 積層しているが、真空貼り合わせ装置用静電チャック A全体の厚さ寸法に余裕が有 る場合には、図示せぬが単層構造の基材保護層 2bを二層以上積層して、この基材 保護層 2bの厚み分だけ上記台座部 3の貼り合わせ面 3aから電極層 laまでの距離を 広げるようにしている。 The base material protective layer 2b is formed into a single layer structure from the same material as the dielectric protective layer lc, and in the case of the illustrated example, the bonding surface 3a of the back surface of the base material layer 2 and the pedestal portion 3 Only between Although there is room in the overall thickness dimension of the electrostatic chuck A for a vacuum bonding apparatus, although two layers or more of the base material protective layer 2b having a single layer structure are laminated, The distance from the bonding surface 3a of the pedestal 3 to the electrode layer la is increased by the thickness of the base material protective layer 2b.
[0028] また、真空貼り合わせ装置用静電チャック A全体の厚さ寸法を厚くできな ヽ場合に は、図示せぬが基材保護層 2bを複数層に分割して、上記台座部 3の貼り合わせ面 3 aから電極層 laまでの厚さを略同じに維持しつつ多層化しても良 、。  In the case where the thickness dimension of the entire electrostatic bonding chuck A for a vacuum bonding apparatus can not be increased, the base protection layer 2 b is divided into a plurality of layers (not shown) so that the base portion 3 is not shown. It may be multilayered while maintaining the thickness from the bonding surface 3a to the electrode layer la substantially the same.
[0029] 更に、上記基材層 2と基材保護層 2bとの間又は基材保護層 2b同士の間には、緩 衝層 2cを設けることにより、基材保護層 2b全体に亘つてクラックが進行しても緩衝層 2cで断ち切られ、次の基材層 2又は次の基材保護層 2bまでクラックが進行しないす ることが好ましい。  Furthermore, by providing the buffer layer 2 c between the base layer 2 and the base protective layer 2 b or between the base protective layer 2 b, the entire base protective layer 2 b is cracked. It is preferable that even if the process proceeds, the buffer layer 2c cuts off and the crack does not progress to the next substrate layer 2 or the next substrate protective layer 2b.
本実施例の場合には、この緩衝層 2cが粘着材又は接着剤などカゝらなる接着層であ るが、粘着材又は接着剤以外の材質で緩衝層 2cを構成しても良い。  In the case of this embodiment, the buffer layer 2c is an adhesive layer made of a pressure sensitive adhesive or an adhesive, but the buffer layer 2c may be made of a material other than the pressure sensitive adhesive or the adhesive.
[0030] 従って、図 2 (a) (b)に示すものは、台座部 3の貼り合わせ面 3aから電極層 laまで の距離を基材保護層 2bの厚み分だけ広げた場合には、その製造工程において基材 保護層 2bの裏面と台座部 3の貼り合わせ面 3aとを貼り合わせる際、両者間に侵入し た大きな異物を嚙み込んだり、台座部 3の貼り合わせ面 3aにバリなどの凹凸部分が あつたとしても、基材保護層 2bの厚みで電極層 laへのダメージの確率が減少する。 Accordingly, in the case shown in FIGS. 2 (a) and 2 (b), when the distance from the bonding surface 3a of the pedestal 3 to the electrode layer la is extended by the thickness of the base material protective layer 2b, When bonding the back surface of the base material protective layer 2b to the bonding surface 3a of the pedestal portion 3 in the manufacturing process, large foreign particles invading between the two may be captured or burrs may be formed on the bonding surface 3a of the pedestal portion 3 Even if the asperities are present, the thickness of the substrate protective layer 2b reduces the probability of damage to the electrode layer la.
[0031] これと同時に、小さい異物の嚙み込みで基材保護層 2bの台座側裏面が傷付いて も、基材保護層 2bでクラックの進行が抑えられて誘電層 laまで至らないため、そのよ うな破壊モードの確率としては極端に少なくなる。 At the same time, even if the base-side back surface of the base material protective layer 2b is damaged by small foreign particles being engulfed, the base layer protective layer 2b suppresses the progress of the crack and does not reach the dielectric layer la. The probability of such failure modes is extremely low.
また、上記基材保護層 2bの台座側裏面カゝら電極層 laまでの全体厚さを略同じ〖こ 維持しつつ層の構成を分割して多層化した場合には、小さな異物を嚙み込んで基材 保護層 2bの台座側裏面が傷付ついても、多層の基材保護層 2bでクラックの進行が 抑えられて誘電層 laまで至らな!/、。  In the case of dividing the layer structure into multiple layers while maintaining the entire thickness of the base material protective layer 2b to the base side back surface of the base side caustic electrode layer la substantially the same, the small foreign matter is collected Even if the base side back surface of the base material protective layer 2b is scratched, the progress of the crack is suppressed by the multilayer base material protective layer 2b and the dielectric layer la is reached!
その結果、製造時の異物嚙み込みや台座部 3の貼り合わせ面 3aにバリなどの凹凸 部分による静電吸着機能部 1の破損を防止できる。  As a result, it is possible to prevent damage to the electrostatic attraction function unit 1 due to foreign matter absorption during manufacturing and unevenness such as burrs on the bonding surface 3 a of the pedestal 3.
実施例 3 [0032] この実施例 3は、図 3 (a) (b)に示す如ぐ前記図 1 (a) (b)に示した実施例 1の誘電 保護層 lc及び緩衝層 Idと、前記図 2 (a) (b)に示した実施例 2の基材保護層 2b及び 緩衝層 2cとを両方設けた構成が、前記実施例 1及び実施例 2とは異なり、それ以外 の構成は実施例 1及び実施例 2と同じものである。 Example 3 Example 3 corresponds to dielectric protective layer lc and buffer layer Id of Example 1 shown in FIGS. 1 (a) and (b) as shown in FIGS. 3 (a) and (b), and FIG. (a) The structure which provided both the base material protective layer 2b and the buffer layer 2c of Example 2 shown to (b) differs from the said Example 1 and Example 2, and the other structure is Example 1 and it differs. And the same as in Example 2.
[0033] 図示例の場合には、誘電層 lbの表面に単層構造の誘電保護層 lcを一層のみ積 層したが、これに限定されず、単層構造の誘電保護層 lcを二層以上積層して、この 誘電保護層 lcの厚み分だけ上記基板接触面 から電極層 laまでの距離を広げた り、また誘電保護層 lcを複数層に分割して、上記基板接触面 カゝら電極層 laまで の全体厚さを略同じに維持しつつ多層化しても良い。  [0033] In the case of the illustrated example, only a single layer dielectric protective layer lc is stacked on the surface of the dielectric layer lb. However, the present invention is not limited thereto, and two or more single layer dielectric protective layer lc may be provided. The distance from the substrate contact surface to the electrode layer la is increased by the thickness of the dielectric protective layer 1c, or the dielectric protective layer 1c is divided into a plurality of layers to form the substrate contact surface. Layering may be performed while maintaining the same overall thickness to the layer la.
[0034] 更に、基材層 2の裏面と台座部 3の貼り合わせ面 3aとの間に単層構造の基材保護 層 2bを一層のみ積層したが、これに限定されず、単層構造の基材保護層 2bを二層 以上積層して、この基材保護層 2bの厚み分だけ台座部 3の貼り合わせ面 3aから電 極層 laまでの距離を広げたり、また基材保護層 2bを複数層に分割して、台座部 3の 貼り合わせ面 3aから電極層 laまでの厚さを略同じに維持しつつ多層化しても良い。  Furthermore, although only a single layer of the substrate protective layer 2b is laminated between the back surface of the substrate layer 2 and the bonding surface 3a of the pedestal portion 3, the present invention is not limited thereto. By laminating two or more base material protective layers 2b, the distance from the bonding surface 3a of the pedestal 3 to the electrode layer la is increased by the thickness of the base material protective layer 2b, or the base material protective layer 2b is It may be divided into a plurality of layers, and may be multilayered while maintaining the thickness from the bonding surface 3a of the pedestal portion 3 to the electrode layer la substantially the same.
[0035] 従って、図 3 (a) (b)に示すものは、基板 Wとの間の異物嚙み込みによる静電吸着 機能部 1の破損防止と、製造時の異物嚙み込みや台座部 3の貼り合わせ面 3aにバリ などの凹凸部分による静電吸着機能部 1の破損防止を同時に達成できる。  [0035] Therefore, what is shown in Figs. 3 (a) and 3 (b) is the prevention of damage to the electrostatic adsorption function unit 1 due to the foreign matter being caught between the substrate W and the foreign matter being caught during manufacture or the pedestal part. At the same time, it is possible to simultaneously prevent breakage of the electrostatic attraction function unit 1 by the uneven portion such as burrs on the bonding surface 3a of 3.
[0036] 尚、前示実施例では、真空貼り合わせ装置用静電チャック Aを真空貼り合わせ装 置に組み込み、基板 Wとしてガラス基板を吸着保持させる場合を示したが、これに限 定されず、ガラス以外の材料で形成された基板を吸着保持させた場合であっても前 示実施例と同様な作用効果が得られる。  Although in the above-described embodiment, the electrostatic chuck A for a vacuum bonding apparatus is incorporated into the vacuum bonding apparatus and a glass substrate is held by suction as the substrate W, the present invention is not limited thereto. Even in the case where a substrate made of a material other than glass is adsorbed and held, the same function and effect as those of the above-described embodiment can be obtained.
[0037] 更に、前記真空貼り合わせ装置は静電チャック Aのみで基板 Wを吸着保持する場 合を示した力 これに限定されず、この静電チャック Aによる基板 Wの吸着保持に加 えて、大気中における基板 Wの保持を補助するための吸引吸着手段や粘着保持手 段を配設しても良い。  Further, the vacuum bonding apparatus has shown the case where the substrate W is held by suction only with the electrostatic chuck A. The present invention is not limited to this. In addition to the suction holding of the substrate W by the electrostatic chuck A, A suction / adsorption means or an adhesion holding means may be provided to assist the holding of the substrate W in the atmosphere.
図面の簡単な説明  Brief description of the drawings
[0038] [図 1]本発明の一実施例を示す真空貼り合わせ装置用静電チャックの縦断正面図で あり、(a)は貼り合わせ前の状態を示し、(b)は貼り合わせ後の状態を示している。 圆 2]本発明の他の実施例を示す真空貼り合わせ装置用静電チャックの縦断正面図 であり、(a)は貼り合わせ前の状態を示し、(b)は貼り合わせ後の状態を示している。 圆 3]本発明の他の実施例を示す真空貼り合わせ装置用静電チャックの縦断正面図 であり、(a)は貼り合わせ前の状態を示し、(b)は貼り合わせ後の状態を示している。 符号の説明 FIG. 1 is a longitudinal sectional front view of an electrostatic chuck for a vacuum bonding apparatus showing an embodiment of the present invention, in which (a) shows a state before bonding, and (b) shows a state after bonding It shows the state. 2) A longitudinal sectional front view of an electrostatic chuck for vacuum bonding apparatus showing another embodiment of the present invention, (a) shows a state before bonding, (b) shows a state after bonding ing. 3) A longitudinal sectional front view of an electrostatic chuck for vacuum bonding apparatus showing another embodiment of the present invention, (a) shows a state before bonding, (b) shows a state after bonding ing. Explanation of sign
A 静電チャック B, C 保持板  A Electrostatic chuck B, C Holding plate
W 基板  W substrate
1' 基板接触面  1 'Substrate contact surface
la 電極層 lb 誘電層  la electrode layer lb dielectric layer
lc 誘電保護層 Id 緩衝層 (接着層)  lc dielectric protective layer Id buffer layer (adhesive layer)
2 基材層 2a 接着層  2 base material layer 2a adhesive layer
2b 基材保護層 2c 緩衝層 (接着層)  2b base material protective layer 2c buffer layer (adhesive layer)
3 台座部 3a 貼り合わせ面  3 pedestal 3a bonding surface
4 接着層  4 Adhesive layer

Claims

請求の範囲 The scope of the claims
[1] 平板状の電極層(la)を誘電層(lb)で覆い、この誘電層(lb)と基板 (W)とを接触さ せて吸着保持する真空貼り合わせ装置用静電チャックにおいて、  [1] An electrostatic chuck for a vacuum bonding apparatus, which covers a flat electrode layer (la) with a dielectric layer (lb) and brings the dielectric layer (lb) and the substrate (W) into contact with each other and holds them by suction.
前記誘電層 (lb)の表面に所定厚さの誘電保護層(lc)を少なくとも一層以上設け て、その最も表面側に配置された誘電保護層(lc)の基板接触面(1' )から電極層 ( la)までの間を複数層からなる積層構造にしたことを特徴とする真空貼り合わせ装置 用静電チャック。  At least one dielectric protective layer (lc) having a predetermined thickness is provided on the surface of the dielectric layer (lb), and an electrode is provided from the substrate contact surface (1 ') of the dielectric protective layer (lc) disposed on the outermost surface side. An electrostatic chuck for a vacuum bonding apparatus characterized in that a laminated structure having a plurality of layers is provided between layers (la).
[2] 前記誘電層 (lb)と誘電保護層(lc)との間又は誘電保護層(lc)同士の間に緩衝層  [2] A buffer layer between the dielectric layer (lb) and the dielectric protective layer (lc) or between the dielectric protective layers (lc)
(Id)を設けた請求項 1記載の真空貼り合わせ装置用静電チャック。  The electrostatic chuck for a vacuum bonding apparatus according to claim 1, wherein (Id) is provided.
[3] 前記誘電保護層(lc)としてセラミックスを用いた請求項 1または 2記載の真空貼り合 わせ装置用静電チャック。  [3] The electrostatic chuck for a vacuum bonding apparatus according to claim 1 or 2, wherein a ceramic is used as the dielectric protective layer (lc).
[4] 電極層 (la)の表面に誘電層 (lb)が積層された静電吸着機能部(1)と、その土台と なる台座部(3)とを貼り合わせてなる真空貼り合わせ装置用静電チャックにおいて、 前記電極層 (la)の裏面側に設けられた基材層 (2)と台座部(3)の貼り合わせ面(3 a)との間に、所定厚さの基材保護層(2b)を少なくとも一層以上設けて、この台座部( 3)の貼り合わせ面(3a)から電極層 (la)までの間を複数層の積層構造にしたことを 特徴とする真空貼り合わせ装置用静電チャック。  [4] For vacuum bonding apparatus formed by bonding an electrostatic adsorption function section (1) in which a dielectric layer (lb) is laminated on the surface of an electrode layer (la) and a pedestal section (3) as a base thereof In an electrostatic chuck, a substrate of a predetermined thickness is protected between a substrate layer (2) provided on the back surface side of the electrode layer (la) and a bonding surface (3a) of a pedestal portion (3). A vacuum bonding apparatus characterized in that at least one layer (2b) is provided, and a plurality of layers are formed between the bonding surface (3a) of the pedestal (3) and the electrode layer (la). For electrostatic chucks.
[5] 請求項 1、 2、 3または 4記載の真空貼り合わせ装置用静電チャック (A)を、上下一対 の保持板 (B, C)の対向面の両方又は一方のみに設け、この真空貼り合わせ装置用 静電チャック (A)に基板 (W)を吸着保持して対向させ、これら両基板 (W, W)を真空 中で接近して圧着させることを特徴とする真空貼り合わせ装置。  [5] The electrostatic chuck (A) for a vacuum bonding apparatus according to claim 1, 2, 3 or 4 is provided on only one or both of the opposing surfaces of the upper and lower holding plates (B, C). A vacuum bonding apparatus characterized in that a substrate (W) is held by suction and opposed to an electrostatic chuck (A) for a bonding apparatus, and these two substrates (W, W) are approached and pressure bonded in a vacuum.
PCT/JP2005/018679 2004-10-29 2005-10-11 Electrostatic chuck for vacuum bonding equipment and vacuum bonding equipment using the same WO2006054407A1 (en)

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JP2004-316173 2004-10-29
JP2004316173A JP2008026338A (en) 2004-10-29 2004-10-29 Electrostatic chuck for vacuum bonding equipment and vacuum bonding equipment using same

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211767A (en) * 1990-01-25 1995-08-11 Applied Materials Inc Electrostatic clamp and method therefor
JPH0831917A (en) * 1994-07-19 1996-02-02 Hitachi Chem Co Ltd Electrostatic chuck and its manufacture
JPH08316296A (en) * 1995-05-23 1996-11-29 Nikon Corp Electrostatic chuck
JPH1131736A (en) * 1997-07-11 1999-02-02 Anelva Corp Electrostatic attraction stage for semiconductor manufacturing device
JPH1161404A (en) * 1997-08-21 1999-03-05 Hitachi Ltd Electrostatic attracting device, its production and working device using the same
JPH1187479A (en) * 1997-09-10 1999-03-30 Shin Etsu Chem Co Ltd Electrostatic chuck
JP2001223261A (en) * 2000-02-07 2001-08-17 Hitachi Ltd Electrostatic chuck and electrostatic attraction device
JP2003324144A (en) * 2002-04-30 2003-11-14 Shin-Etsu Engineering Co Ltd Electrostatic chuck and lamination device for flat panel substrate using it

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211767A (en) * 1990-01-25 1995-08-11 Applied Materials Inc Electrostatic clamp and method therefor
JPH0831917A (en) * 1994-07-19 1996-02-02 Hitachi Chem Co Ltd Electrostatic chuck and its manufacture
JPH08316296A (en) * 1995-05-23 1996-11-29 Nikon Corp Electrostatic chuck
JPH1131736A (en) * 1997-07-11 1999-02-02 Anelva Corp Electrostatic attraction stage for semiconductor manufacturing device
JPH1161404A (en) * 1997-08-21 1999-03-05 Hitachi Ltd Electrostatic attracting device, its production and working device using the same
JPH1187479A (en) * 1997-09-10 1999-03-30 Shin Etsu Chem Co Ltd Electrostatic chuck
JP2001223261A (en) * 2000-02-07 2001-08-17 Hitachi Ltd Electrostatic chuck and electrostatic attraction device
JP2003324144A (en) * 2002-04-30 2003-11-14 Shin-Etsu Engineering Co Ltd Electrostatic chuck and lamination device for flat panel substrate using it

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TW200629460A (en) 2006-08-16

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