WO2006040919A1 - 電子放出装置及び電子放出方法 - Google Patents
電子放出装置及び電子放出方法 Download PDFInfo
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- WO2006040919A1 WO2006040919A1 PCT/JP2005/017666 JP2005017666W WO2006040919A1 WO 2006040919 A1 WO2006040919 A1 WO 2006040919A1 JP 2005017666 W JP2005017666 W JP 2005017666W WO 2006040919 A1 WO2006040919 A1 WO 2006040919A1
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- Prior art keywords
- voltage
- electrons
- electron emission
- electrode
- emitter
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Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
- G09G2310/066—Waveforms comprising a gently increasing or decreasing portion, e.g. ramp
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
Definitions
- the present invention provides an element comprising: an emitter portion made of a dielectric; a lower electrode formed at a lower portion of the emitter portion; and an upper electrode formed at an upper portion of the emitter portion. And an electron emission method using the same. Background technology
- a dielectric portion a lower electrode (lower electrode layer) formed on the lower surface of the emitter portion, and a number of fine through-holes formed on the upper surface of the emitter portion.
- An upper electrode upper electrode layer having an electron emission element, and a fine voltage penetrating through the upper electrode by applying a driving voltage between the upper electrode and the lower electrode to invert the polarization of the dielectric.
- An electron-emitting device that emits electrons from a hole is known (for example, Japanese Patent Application Laid-Open No. 20-230).
- the potential of the upper electrode with respect to the potential of the lower electrode (the potential difference between the lower electrode and the upper electrode relative to the potential of the lower electrode is referred to simply as “element voltage J” hereinafter. )
- element voltage J the potential difference between the lower electrode and the upper electrode relative to the potential of the lower electrode.
- the element voltage is set to a positive voltage having a magnitude greater than or equal to a predetermined magnitude in a state where electrons are accumulated in the part, electrons accumulated in the emitter part pass through the fine through hole. Can be released upwards of the upper pole
- the device voltage is set to Sx ⁇ to the positive pressure V p 1.
- the emission electron current Ph in FIG. 24 the electrons accumulated in the emitter section are emitted above the upper lightning pole.
- Such an electron emission device is used, for example, as a display, a liquid crystal eight-crystal display, or various electron emission.
- the electron emission at T within a predetermined period (for example, represented by the area S of the hatched portion in FIG. 24) is large.
- V m 2 (1 V mm 2 I> I V m 1 1) is changed to increase the amount of one electron, and the positive voltage is changed from V p 1 to V p 2 (V p )
- the amount of electron emission per time (represented by the hatched portion S 2 in Fig. 26) is increased by 2 1> 1 V P 1.
- the peak value P k 2 of the emitted electron current shown in 26 is larger than P k 1 in the peak shown in Fig. 24.
- a large number of electrons are emitted.Therefore, a large current flows locally in the child-emitting device, generating a large amount of heat, which may cause the child to deteriorate. is there.
- the present invention has been made in order to address the above-described problems, and the object of the present invention is to provide an electron emission device having a long lifetime and a large electron emission amount, and avoiding a decrease in the lifetime of the electron emission device.
- An electron emission method capable of increasing the amount of emitted electrons is provided.
- the electron emission according to the present invention includes an emitter portion made of a dielectric material, a lower electrode formed under the emitter portion, and the lower electrode sandwiching the emitter portion. And a plurality of fine through holes are formed at the top of the emitter portion so as to face each other, and the surface of the fine through hole that faces the emitter portion is the same.
- this element allows electrons in the emitter section to be detected when the element voltage becomes a positive voltage having a magnitude greater than or equal to a predetermined magnitude in a state where electrons are collected in the emitter section.
- the electron emission device sets the element voltage to a negative voltage, and then sets a drive voltage for setting the element voltage to the positive voltage between the lower electrode and the upper electrode.
- the dynamic voltage applying means is configured to increase the positive voltage in a shape (see, for example, FIG. 15).
- Electrons are accumulated in the evening. The stored electrons are gradually released every time the device voltage is increased by 13 ⁇ 4 steps.
- the electrons accumulated in the evening part by one electron accumulation operation are divided into multiple times.
- the electron is accumulated (for example, when the negative voltage is reduced to V m 2 by B).
- the amount of electrons emitted in a single electron emission operation is smaller than in the conventional case shown in (I.e., the peak value of the emitted electron current P k 3 ⁇ the peak value of the emitted electron current P k 2
- the dipole takes from one electron accumulation operation to the completion of the emission of the accumulated electrons by the child accumulation. It just turns around. Therefore, since the number of polarization reversal operations does not increase, the deterioration of the element can be suppressed.
- the drive voltage applying means is
- the negative pressure is less than the first pressure ⁇ and It is preferable that the device is temporarily set to a voltage that does not accumulate electrons in the emitter (see, eg, FIG. 17).
- positive voltage is changed stepwise + A port
- the device voltage is increased from the first voltage to the second voltage, and then from the second voltage to the third voltage that is larger than the second voltage, It may be changed to a negative voltage.
- An electron emission method according to the present invention is an electron emission method using the above-described electron-emitting device.
- the device voltage which is the potential of the upper electrode with respect to the potential of the lower electrode, is set to a negative voltage, and electrons are supplied from the upper electrode to the evening portion and the electrons are accumulated in the emitting portion. Thereafter, the voltage of the element is increased to a positive first voltage, and electrons accumulated in the X-mitter part are emitted through the fine through-hole, and then the element voltage is increased to a positive first voltage larger than the first voltage.
- This method increases the voltage to 2 and discharges the electrons remaining in the 1-port junction through the fine through-hole.
- the electrons accumulated in the emitter section by one electron accumulation operation are emitted in a plurality of times. Therefore, for the same reason as described above, it is possible to avoid deterioration of the device due to heat generation or increase in the number of polarization inversions,
- the common voltage is smaller than the first voltage and the second device has the same voltage.
- the electron-emitting device used in the electron-emitting device or the electron-emitting method according to the present invention is disposed on the upper side of the upper electrode so as to face the upper electrode, and is a phosphor that emits light by collision of electrons. It is desirable to further provide In general, when an excessive amount of electrons collide with a phosphor, the energy of the electrons changes to heat, and the light emission amount of the phosphor does not increase. on the other hand
- the phosphor emits afterglow, which decreases with time after the electron collision ends. Therefore, the phosphor is allowed to collide with an appropriate amount of electrons with which the energy of electrons hardly changes to heat, and then the collision of m molecules is stopped, so that the amount of afterglow emission becomes small. Therefore, when electrons are made to collide with each other again, light is generated with high efficiency. Therefore, as in the electron emission device or the electron emission method of the present invention, a plurality of times is performed while suppressing one electron emission amount. In addition, if electrons are repeatedly emitted with a short period and the electrons collide with the phosphor, a large light emission area can be obtained with smaller power consumption. As a result
- the electron-emitting device or the electron-emitting device used by the electron-emitting method is the electron-emitting device or the electron-emitting device used by the electron-emitting method.
- a collector voltage applying means for applying a voltage to the collector electrode so that the collector electrode forms an electric field that draws the emitted electrons toward the collector electrode;
- the electron emitted from the emitter through the fine through hole of the upper electrode can be made to collide with the phosphor by the electric field formed by the collector electrode. Furthermore, since the electric field generated by the collector electrode can accelerate the electrons by giving energy to the emitted electrons, it is possible to increase the amount of light emitted from the phosphor.
- FIG. 1 is a partial cross-sectional view of an electron emission device according to the first embodiment of the present invention.
- Fig. 2 shows a partial cross-sectional view of the electron emission device shown in Fig. 1 cut along different planes.
- FIG. 3 is a partial plan view of the electron emission device shown in FIG.
- FIG. 4 is an enlarged partial cross-sectional view of the electron emission device shown in FIG. 1.
- FIG. 5 is an enlarged partial plan view of the upper electrode shown in FIG.
- FIG. 6 is a diagram showing one state of the electron emission device shown in FIG.
- Fig. 7 is a graph of the voltage unipolar characteristics of the emitter shown in Fig. 1.
- FIG. 8 is a view showing another state of the electron emission device shown in FIG. 1.
- FIG. 9 is a view showing another state of the electron emission device shown in FIG. 1.
- FIG. FIG. 4 is a view showing another state of the electron emission device shown in FIG.
- FIG. 11 is a diagram showing another state of the electron emission device shown in FIG.
- FIG. 12 is a diagram showing another state of the electron emission device shown in FIG.
- Figure 13 shows the state of electrons emitted by an electron emission device that does not have a focusing electrode.
- FIG. 14 is a diagram showing the state of electrons emitted by the electron emission device shown in FIG.
- FIG. 15 is a timing chart showing the excitation electron pressure applied between the upper and lower electrodes by the drive voltage application circuit shown in Fig. 1 and the emitted electron current representing the amount of emitted electrons.
- Fig. 16 is a circuit diagram of the drive voltage application circuit, focusing electrode potential application circuit, and 3-rectifier voltage application circuit shown in Fig. 1.
- FIG. 17 (A) shows an emission electron current representing the drive voltage applied between the upper and lower electrodes and the amount of electrons emitted by the drive voltage application circuit of the electron emission device according to the second embodiment of the present invention. This is a time chart showing
- FIG. 17 (B) is a graph of the voltage unipolar characteristics of the emitter.
- FIG. 18 shows the drive voltage applied between the upper and lower electrodes by the drive voltage application circuit of the electron emission device according to the third embodiment of the present invention and the emitted electron current representing the amount of the emitted electron. It is a time chart.
- FIG. 19 is a partial cross-sectional view of an electron emission device according to the fourth embodiment of the present invention.
- FIG. 20 is a partial plan view of a modification of the electron emission device according to the present invention.
- FIG. 21 is a partial plan view of another modification of the electron emission device according to the present invention. It is.
- FIG. 22 is a partial sectional view of another modification of the child discharge device according to the present invention.
- Fig. 23 is another partial sectional view of the electron emission device shown in Fig. 22.
- Fig. 24 shows the driving pressure applied between the upper and lower electrodes and the amount of emitted electrons in the conventional electron emission device. This is an evening image showing the emitted electron current.
- Fig. 25 is a graph showing an emission electron current representing another drive voltage applied between the upper and lower electrodes and the amount of electrons emitted in a conventional electron emission device.
- FIG. 26 shows an example of an electron emission current representing another driving voltage applied between the upper and lower electrodes and an amount of emitted electrons in a conventional electron emission device.
- This electron emission device can be applied to various devices such as an electron beam irradiation device, a light source such as a liquid crystal screen knock light, and an electron emission source of an electronic device manufacturing apparatus. Applied to spray.
- the electron emission device 10 includes a substrate 11, a plurality of lower electrodes (lower electrode layers) 12, and an emitter unit 1. 3, a plurality of upper electrodes (upper electrode layers) 14, an insulating layer 15, and a plurality of focusing electrodes (focusing electrode layers) 16 are provided.
- FIG. 1 is a partial plan view of the electron emission device 10.
- Fig. 3 is a side view of electron emission 10 cut along a plane along line 1 in Fig. 3.
- Fig. 2 shows an electron emission device 10 cut along plane 2-2 in Fig. 3. It is a sectional view
- Substrate 11 is a plane formed by the X and Y axes orthogonal to each other
- a thin plate body having an upper surface and a lower surface parallel to the (X-Y plane) and having a thickness direction in the Z-axis direction perpendicular to the X-axis and Y-axis, respectively.
- Each of the lower electrodes 1 2 is made of a conductive material (in this case, silver or platinum
- each lower electrode 12 in plan view is a strip shape having a longitudinal direction in the Y-axis direction. As shown in FIG. 1, the two lower electrodes 1 2 adjacent to each other are formed at positions separated by a predetermined distance in the X-axis direction.
- the lower electrodes 1 2, 1 2, 1 2-2 and 1 2-3 are referred to as the first lower electrode, the second lower electrode, and the third lower electrode, respectively.
- Emitsu 13 is a dielectric material with a large specific electric conductivity (for example, lead magnesium butyrate (PMN), lead titanate (PT) and lead zirconate).
- PMN lead magnesium butyrate
- PT lead titanate
- lead zirconate lead zirconate
- the X-mitter portion 13 is a thin plate similar to the substrate 11. On the upper surface of the emitter portion 13, as shown in an enlarged view in FIG. 4, unevenness 13 a due to the grain boundary of the dielectric is formed.
- Each of the upper electrodes 14 is made of a conductive material (in this case, platinum), and is formed in layers on the upper surface of the emitter portion 13.
- the shape of each upper electrode 14 in plan view is a rectangle having a short side and a long side along the X-axis direction and the Y-axis direction, respectively, as shown in FIG.
- the plurality of upper electrodes 14 are spaced apart from each other and arranged in a matrix.
- Each of the upper electrodes 14 is opposed to each of the lower electrodes 12, and is disposed at a position overlapping with each of the lower electrodes 12 in a plan view.
- the plurality of upper electrodes 14 arranged in the X-axis direction are connected to each other by a layer made of a conductor (not shown) so as to be maintained at the same potential.
- the surface of the peripheral portion of the fine through hole 14 a that faces the emitter portion 1 3 is the emitter portion 1, as indicated by reference numeral 14 b in FIG. 3 (upper surface of the emitter 1 3).
- the lower electrode 12, the emitter section 13, and the upper electrode 14 made of a platinum resine base are integrated by firing. This By the baking treatment for integration, the wrinkles that become the upper electrode 14 shrink, for example, from a thickness of 10 m to a thickness of 0.1 m. At this time, upper electrode 1
- the average diameter of the fine through-holes 14a may be about 0.01 / 2 m or more and about 10 m or less.
- 5 ⁇ pole 14 is not less than 0.01 m and not more than 10 am, preferably not less than 0.05 m and not more than 1 m.
- the maximum distance d between the surface facing the cutter unit 1 3 and the emitter unit 13 (the upper surface of the emitter unit 13) is 0 m or less ⁇ 1 0 m or less, preferably 0.0 1 / m or more and 1 L m or less.
- the part where 2 overlaps forms one element for electron emission.
- the emitter section 1 3 constitutes the first element and the second lower electrode 1 2- 2, Emitter part 1 3 sandwiched between second upper m pole 14-2 and second lower electrode 1 2-2 and second upper electrode 1 4-2 constitutes the second element is doing .
- the third lower electrode 1 2-3 The third upper electrode 1 4 1 3 and the third lower electrode 1 2-3 and the third upper electrode 1 4 1 3 3 constitutes the third element.
- the electron emission device 10 includes a plurality of independent electron emission elements.
- the insulating layer 15 is formed on the upper surface of the emitter portion 1 3 with a plurality of upper electrodes 1
- the thickness of the insulating layer 15 (length in the ⁇ -axis direction) is slightly larger than the thickness of the upper electrode 14 (length in the Z-axis direction).
- the X-axis and Y-axis direction ends of each insulating layer 15 are arranged on both the X-axis direction both ends and the ⁇ -axis direction both ends of the upper electrode 14. Yes.
- the focusing electrode 16 is made of a conductive material (in this case, silver) and is an insulating layer
- each current collector 16 in plan view is a band having a longitudinal direction in the Y-axis direction.
- Each focusing electrode 16 is formed between upper electrodes 14 adjacent to each other in the X-axis direction in plan view. They are connected to each other by a layer of conductors (not shown) and are maintained at the same potential.
- the focusing electrodes 1 6, 1 6-1, 1 6-2 and 1 6-3 are denoted by the first focusing electrode, the second focusing electrode and the third focusing electrode for convenience. Respectively.
- the second focusing electrode 1 6-2 is between the first upper electrode 1 4 1 1 of the first element and the second upper electrode 1 4 1 2 of the second element, It can be said that the first upper electrode 14 1 1 and the second upper electrode 1 4 1 2 are formed obliquely above.
- the third focusing electrode 1 6-3 is between the second upper electrode 1 4 1 2 of the second element 2 and the third upper electrode 1 4 _ 3 of the third element, and the second upper electrode It can be said that it is formed obliquely above the electrodes 14 1 and 2 and the third upper electrode 1 4 1 3.
- the electron emission device 10 further includes a transparent plate 17, a 3 electrode (collector electrode layer) 18, and a phosphor 19.
- the transparent plate 17 is made of a transparent material (here, made of glass or acrylic), and is formed at a position above the upper electrode 14 (in the positive Z-axis direction) by a predetermined distance.
- the transparent plate 17 is disposed such that the upper and lower surfaces thereof are parallel to the upper surface of the emitter portion 13 and the upper surface of the upper electrode 14 (in the XY plane).
- the collector electrode 1 8 is made of a conductive material (in this case, a transparent conductive film, I T0
- the collector electrode 18 is disposed at a position spaced apart from the upper electrode 14 by a predetermined distance so as to face the upper electrode 14 above the upper electrode 14.
- Each of the phosphors 19 becomes excited by its electrons when the child collides, and emits either red, green or blue light when transitioning from the excited state to the ground state.
- Each phosphor 1 9 is
- Each of the upper electrodes 14 has substantially the same shape in plan view, and is disposed at a position overlapping the upper electrodes 14.
- the red phosphor 19 R is the first upper part Electrode 14 4 Located directly above 1 (axis positive direction), green phosphor 1 9 G is located directly above second upper electrode 1 4-2 and blue phosphor 1 9 B is third Upper electrode 1 4 Located just above 1 3.
- the red phosphor may be formed from Y 2 O 2 S: Eu, the green phosphor from Zn S: Cu, A 1, and the blue phosphor from Zn S: A g, C 1. it can.
- the phosphor 1 9 Y 2 ⁇ 2 S By forming a T b, it is possible to obtain a white phosphor emits white light.
- the white phosphor is a red phosphor (e.g., Y 2 ⁇ 2 S: E u), green phosphor (e.g., Z n S: C u, A 1) and a blue phosphor (e.g., Z n S: It can also be produced by mixing phosphors of Ag, CI).
- the space surrounded by the emitter part 13, the upper electrode 14, the insulating layer 15, the focusing electrode 16, and the transparent plate 17 (collector electrode 18) is substantially empty (100 2 ⁇ 1 0 - 6 P a is rather to prefer, is rather the preferred Ri good 1 0 - is maintained at 3 to 1 0 one 5 P a).
- the transparent plate 17 and the collector electrode 18 constitute a space forming member that forms a closed space together with a side wall portion of the electron emission device 10 (not shown). This sealed space is maintained in a substantially vacuum. Therefore, the element of the electron emission device 1 0
- At least the upper part of the emitter part 13 of each element 13 and the upper electrode 14 are arranged in a sealed space maintained in a substantially vacuum state by the space forming member.
- the electron emission device 10 includes a driving voltage applying circuit (driving voltage applying means, potential difference applying means) 2 1 and a focusing electrode potential applying circuit (focusing electrode potential difference applying means). 2 2 and a collector voltage applying circuit (lector voltage applying means) 2 3.
- the drive voltage application circuit 2 1 is a power supply that generates a drive voltage V i n (described later).
- Power supply 2 1 s is for each upper electrode 14 and each lower electrode
- the drive voltage applying circuit 21 includes a power source 2 1 s and a circuit for connecting the power source 2 1 s to each element. Further, the drive voltage application circuit 21 is connected to the signal control circuit 100 and the power supply circuit 110, and the upper electrodes 14 facing each other based on signals from the signal control circuit 100. The drive voltage Vin is applied between the device and the lower electrode 1 2 (element)
- the focusing electrode potential applying circuit 2 2 is connected to the focusing electrode 1 6, and always applies a constant negative potential (pressure) V s to the collecting electrode 16.
- the voltage regulator circuit 2 3 has a predetermined voltage (
- Rectifier voltage Rectifier voltage
- a switching element 2 3 b, a constant voltage source 2 3 c that generates a constant voltage V c 3 ⁇ 4, and a switch control circuit 2 3 d are provided.
- One end of the resistor 23a is in contact with the collector electrode 18 and the other end of the resistor 23a is in contact with the fixed contact of the switching element 23b.
- Switching element 2 3 b is a semiconductor element such as M ⁇ S-FET and is in contact with the switch control circuit 2 3 d.
- the switching element 2 3 b has two switching points in addition to the fixed connection point.
- the switching element 2 3 b is a switch control circuit 2.
- one of the two switching points and the fixed connection point are selectively connected to each other.
- One of the two switching points is grounded and the other one is connected.
- the cathode of the pressure source 2 3 C is grounded
- the switch control circuit 2 3 d is connected to the signal control circuit 1 0 0 and the signal control Switching control of switching element 2 3 b is performed based on 1 from circuit 1 0
- the driving voltage V in is a simple rectangular waveform different from the driving voltage V in of the first embodiment.
- the potential of the upper electrode 14 relative to the potential of the lower electrode 1 2 (the actual potential difference between the lower electrode 1 2 and the upper electrode 14 with respect to the potential of the lower electrode 1 2).
- a certain element voltage V ka) is maintained at a positive predetermined voltage (second voltage) V p 2, and immediately after all the electrons in the utter part 13 are emitted,
- the explanation starts from the state that is not stacked in 3.
- the negative pole of the dipole of the etta portion 13 is in a state of being directed to the upper surface (Z-axis positive direction, ie, the upper electrode 14 side) of the emitter portion 13.
- This state is the state of point P 1 on the graph shown in FIG.
- the graph in Fig. 7 is a graph of the voltage-dipole characteristics of the X-tatter unit 13 with the child voltage V ka on the horizontal axis and the charge Q stored in the element 10 on the vertical axis.
- the supplied electrons mainly form the upper part of the emitter part 13, the vicinity of the part exposed from the fine through hole 14 a of the upper electrode 14, and the fine through hole 14 a.
- Near the end of the upper electrode 14 hereinafter also referred to simply as “the vicinity of the fine through-hole 14 a of the emitter portion 13”.
- the element voltage V ka rapidly changes toward the negative predetermined voltage V m 2.
- the electron accumulation is completed (the electron accumulation saturation state is reached). This state is the state of point p 4 on plane 7.
- the positive polarization inversion is completed.
- the element voltage V ka increases rapidly, and the element voltage V ka reaches a predetermined positive voltage V p 2 (the state at the point P i in FIG. 7).
- the element voltage V ka is a negative predetermined voltage
- the drive voltage V in is set again to the negative predetermined voltage V m 2 so as to be V m 2
- the element voltage V ka decreases toward the point p 3 via the point p 2 in FIG.
- the drive voltage application circuit 2 1 sets the drive voltage Vin to the negative predetermined voltage V m 2 only for the upper electrode 14 (between the upper and lower electrodes) of the element that should emit electrons.
- the drive voltage Vin is maintained at the value of “0 (V)” for the upper electrode 14 that performs electron accumulation and does not need to emit electrons, and then for all the upper electrodes 14
- the drive voltage Vin is changed simultaneously (simultaneously) to the positive predetermined voltage V p 2.
- electrons are emitted only from the upper electrode 14 (fine through hole 14 a) of the element that has accumulated the electrons in the emitter section 13. Therefore, polarization inversion does not occur in the emitter section 1 3 near the upper electrode 14 that does not require electron emission.
- electrons emitted from one upper electrode 14 are phosphors (for example, a phosphor directly present on the upper electrode 14 (for example, In addition to reaching the green phosphor 19 G), the phosphors adjacent to the red phosphor 19 R and the blue phosphor 19 B may be reached in some cases.
- the color purity decreases and the sharpness of the image decreases.
- the electron emission device 10 includes a focusing electrode 16 to which a negative potential is applied.
- the focusing electrode 16 is disposed between the adjacent upper electrodes 14 (between the upper electrodes of the adjacent elements) and is slightly above the upper electrode 14. Therefore, as shown in FIG. 14, the electrons emitted from the fine through holes 14 a of the upper electrode 14 are substantially directly extended without being spread by the electric field generated by the focusing electrode 16. Released in the direction.
- the drive voltage Vin is defined as “lower R ⁇ 3 ⁇ 4” when the drive voltage Vin is a positive voltage.
- Upper electrode 1 with respect to the potential of pole 1 2
- the potential of Fig. 4 (child voltage Vka) is a positive voltage. Therefore, the drive voltage V in force is a negative voltage, which means that the drive voltage V in force S is a “voltage with the element voltage V ka as a negative voltage”.
- the power supply 21 s sets the drive voltage Vin to a negative predetermined voltage V m 2 (for example, ⁇ 70 V) B at a predetermined time t 1. As a result, the child pressure V ka once becomes a negative predetermined voltage V m 2. Therefore, the evening part 1
- the negative polarization reversal occurs, and the electrons are supplied from the upper electrode 14 to the emitter part 1 3 and accumulated in the fine hole 1 4 a of the emitter part 1 3.
- the power source 2 1 s of the drive voltage applying circuit 21 has the drive voltage Vin as a predetermined positive voltage.
- the positive predetermined voltage V p 1 is larger than the above-described positive coercive electric field voltage V d, and the minimum voltage (electron) required to start electron emission when the element 10 is in an accumulated state of electrons.
- the discharge threshold voltage V th or higher.
- positive side polarization inversion starts, and electrons accumulated in the vicinity of the fine through hole 14 a are emitted upward through the fine through hole 14 a.
- the positive positive voltage V p l is also referred to as “first voltage” for convenience. .
- the power source 2 1 s of the drive voltage applying circuit 2 1 uses the drive voltage V i n as a positive predetermined voltage V p 2 (for example, +3 0 0
- the positive predetermined voltage V p 2 is larger in magnitude than the positive predetermined voltage V p l. Therefore, the element voltage Vka changes toward the voltage V p 2 that is higher than the above-described electron emission threshold voltage V th and higher than the first voltage V p 1.
- the positive predetermined voltage V p 2 is also referred to as “second voltage” for convenience.
- Electrons remaining in the vicinity of the fine through hole 14 a of the emitter portion 13 are emitted upward through the fine through hole 14 a. That is, the second time immediately after time t 3 Electron emission is performed. The period from time t 3 to time t 4 is also called the second electron emission period.
- the power supply 2 1 s of the drive voltage applying circuit 2 1 again sets the drive voltage V i n to the negative predetermined voltage V m 2 PX.
- the collector voltage application circuit 2 3 described in the control of the collector electrode by the collector voltage application circuit 23 is “changed to the first voltage V ⁇ 1 where the drive voltage Vin is a positive predetermined voltage”. From the point of time (time t 2) ”, the drive voltage Vin is a predetermined voltage to start storing electrons again in the emitter part 13 after the second huge electron emission has ended. It is changed to VP m and the voltage V c is applied to the electrical pole 1 8 during the collector voltage application period at the time immediately before the fortune-telling (time 4). During the application period of the rectifier voltage, the fixed connection point of the switching element 2 3 b is set to the constant voltage source 2 3 c ⁇
- the Kuu electrode 8 forms an electric field that attracts the emitted electrons.
- electrons emitted from the Emi V evening part 13 through the fine through holes 14 a are accelerated by the electric field formed by the collection electrode 18 (with high X energy given). ) While traveling above the upper electrode 14. Therefore, since the phosphor 19 is irradiated with electrons having high energy, a large luminance can be obtained.
- the collector voltage applying circuit 23 has a voltage (for example, 0 V) smaller than the voltage V c applied to the collector electrode 18 during a period other than the three collector voltage applying period (collection voltage non-applying period). Is being granted. In other words, the collector voltage application circuit 23 is not connected to the collector voltage, and the fixed connection point of the switching element 23 b is grounded during the given period. Connect to the selected switching point.
- the collection voltage non-application period is the load accumulation period.
- the collector electrode 18 does not form an electric field that attracts the emitted electrons or reduces the strength of such an electric field. As a result, it is unnecessary because a large inrush current flows in the element 10 during the charge accumulation period Td, or the change rate (voltage change rate) of the element voltage after the negative side polarization inversion becomes excessive. Even if electron emission occurs, the number of such electrons that reach phosphor 19 can be reduced. Therefore, unnecessary light emission is avoided.
- the switching element 23 b can be configured to be a floating point where the grounded switching point is not connected anywhere. In this case, 3 collector electrodes 1 during the collector voltage non-application period
- the state of 8 can be set to the floating state.
- the drive voltage application circuit 21 includes a row selection circuit 21a, a pulse generation source 21b, and a signal supply circuit 21c.
- the symbols D 1 1, D 1 2,... D 2 2, D 2 3, etc. are attached to each of the above-mentioned elements (the upper electrode 14 and the lower electrode 1 2).
- An electron-emitting device composed of overlapping parts is shown.
- the electron emission device 10 in this example includes n elements in the row direction and m elements in the column direction.
- the row selection circuit 2 1 a is connected to the control signal line 1 0 0 a of the signal control circuit 1 0 0 and the positive line 1 1 Op and the negative line 1 1 0 m of the power supply circuit 1 1 0. Yes.
- the row selection circuit 21a is further connected to a plurality of row selection lines LL.
- Each row selection line LL is connected to the lower electrode 12 of a plurality of elements (elements on the same row) forming a group.
- the row selection line LL 1 is connected to each lower electrode 1 2 of the first row elements D 11, D 12, D 13, ... D lm
- the row selection line LL 2 is the second row element.
- D 2 1, D 2 2, D 2 3, D 2 m connected to each lower electrode 1 2 Yes.
- the row selection circuit 2 1 a responds to a control signal from the signal control circuit 100 0 during the charge accumulation period T d in which electrons are accumulated in the emitter unit 13 of each element.
- One selection signal S s (in this case, a 70 V voltage signal) is output for a certain period (row selection period) T s, and the non-selection signal S n (this is applied to the remaining row selection line LL).
- a 0 V voltage signal is output.
- the row selection circuit 2 1 a sequentially changes the row selection line L L that outputs the selection signal S s every fixed row selection period T s.
- the pulse generation source 2 1 b generates a reference voltage (here, 0 V) during the charge accumulation period T d, and the first electron, which is the first half period of the light emission period (lighting period, electron emission period) Th.
- the first constant voltage in this case, -2550 V
- the pulse generation source 2 l b is connected between the negative line 1 1 0 m of the power supply circuit 1 1 0 and the ground (G N D).
- the signal supply circuit 2 1 c Connected to the signal supply circuit 2 1 c is the control signal line 1 0 Ob of the signal control circuit 1 0 0 and the positive line 1 1 Op and the negative line 1 1 0 m of the power supply circuit 1 1 0 Has been.
- the signal supply circuit 2 1 c includes a pulse generation circuit 2 1 c 1 and an amplitude modulation circuit 2 1 c 2 inside.
- the pulse generation circuit 2 1 c 1 outputs a pulse signal SP having a constant pulse period (here, 70 V) in the charge accumulation period T d and a reference voltage in the light emission period Th. (In this case, 0 V) is output.
- the amplitude modulation circuit 2 1 c 2 is connected to the pulse generation circuit 2 1 c 1 so as to receive the pulse signal S p from the pulse generation circuit 2 1 c 1.
- the amplitude modulation circuit 2 1 c 2 is connected to a plurality of pixel signal lines UL.
- Each of the pixel signal lines UL is connected to the upper electrode 14 of a plurality of elements (elements on the same column) forming a group.
- the pixel signal line UL 1 is connected to the upper electrodes 14 of the first column elements D 1 1, D 2 1,... D n 1, and the pixel signal line UL 2 is connected to the second column element D 1 2.
- D 2 2 to D n 2 are connected to the upper electrodes 14, and the pixel signal line UL 3 is connected to the upper electrodes of the third column elements D 1 3, D 2 3, and D n 2. Yes.
- the amplitude modulation circuit 2 1 c 2 amplitude-modulates the pulse signal S p according to the luminance level of the pixel in the selected row during the charge accumulation period T d, and the amplitude-modulated signal (here, 0 3 5 A voltage signal of 70 V is output as a pixel signal S d to a plurality of pixel signal lines UL (UL 1 UL 2 UL m). Further, the amplitude modulation circuit 21 1 c 2 outputs the reference voltage (0 V) generated by the pulse generation circuit 2 1 c 1 as it is during the light emission period Th.
- the signal control circuit 10 0 receives the video signal SV and the synchronization signal S c, a signal for controlling the row selection circuit 2 1 a based on these input signals, a signal for controlling the signal supply circuit 2 1 c, and a collector Signals for controlling the voltage application circuit 2 3 are connected to the signal line 1 0 0 a, signal line 1 0 0 b, and signal line 1
- the power supply circuit 1 1 0 has the positive line 1 1 0 P potential on the negative line 1 1
- a voltage signal is output to the positive line 1 1 0 P and the negative line 1 1 0 m so as to be higher than the 0 m potential by a constant voltage (50 V for 1—).
- the focusing electrode potential applying circuit 2 2 is connected to a connection line SL that connects the focusing electrodes 1 6,
- the focusing electrode potential applying circuit 2 2 is grounded to the connection line SL.
- the potential V s is applied to ⁇
- the collector voltage applying circuit 23 is connected to the connection line C L connected to the third collector electrode 18 and the signal line 100 c of the signal control circuit 100.
- the collector voltage applying circuit 2 3 is connected to the connection line C L with a positive first voltage V c
- V V
- the row selection circuit 2 1 a sends a selection signal S to the row selection line LL 1 of the first row based on the control signal from the signal control circuit 1 0 0. s (70 V) is output, and the non-selection signal Sn (0 V) is output to the other row selection line LL.
- each lower electrode 1 2 of the element D ll D 1 2 D 1 3 D lm in the first row becomes the voltage (70 V) of the selection signal S s.
- the potential of each lower electrode 1 2 of other elements is the non-selection signal Sn Voltage (0 V).
- the signal supply circuit 2 1 c receives the element in the selected row (ie, the element in the first row) based on the control signal from the signal control circuit 100.
- V-70 V negative second predetermined voltage
- the polarization inversion does not occur in the emitter part 1 3 of the child D 1 3, and electrons are accumulated in the emitter part 1 3 of the element D 1 3.
- the row selection circuit 21a is based on the control signal from the signal control circuit 100.
- the selection signal S s (70 V) is output to the row selection line LL 2 of the second row, and the non-selection signal S n (0) is output to the other row selection lines.
- each lower electrode 1 2 is the voltage of the selection signal S s (7 0
- each lower electrode 1 2 of other elements eg, X. In the case of the first row element D 1 1... D 1 m, third row element D 3 1... D 3 m) is not selected.
- the signal supply circuit 2 1 c is based on the control signal from the signal control circuit 100 0, and the element in the selected row (that is, the element D 2 in the second row).
- the pixel signal S d (a voltage signal of 0 3 5 7 0 V) corresponding to the luminance level of each pixel
- Multiple pixel signal lines UL (UL 1 UL 2 UL m
- the electrons corresponding to the pixel signal Sd are accumulated in each element of the second row of elements D2 1 D 2 2 D 2 3 D 2 m .
- the element voltage V ka of the element to which the pressure (0 V) of the non-selection signal Sn is applied to the lower electrode is 0 V (N
- the row selection circuit 2 1 a when the row selection period T s elapses, the row selection circuit 2 1 a outputs a selection signal S s (70 V) to the third row selection line LL 3 (not shown) and another row.
- the non-selection signal S ⁇ (0 V) is output to the selection line.
- the signal supply circuit 2 1 c has the brightness of each pixel configured by each of the selected third row children.
- An operation such as outputting the image table signal S d corresponding to the level to the plurality of pixel signal lines UL is repeated every time the row selection period T s passes until all rows are completed. ⁇
- the amount of electrons (including “0 J”) corresponding to the luminance level of the pixel that each element constitutes is accumulated in the emitter section 13 of all the elements. The above is the operation in the charge accumulation period Td.
- the row selection circuit 21a starts a large negative m pressure (in this case) with respect to all the row selection lines LL in order to start the light emission period Th (actually the first electron emission period).
- the signal supply circuit 2 1 c outputs the reference voltage (0 V) generated by the pulse generation circuit 2 1 c 1 to the corresponding pixel signal line UL via the amplitude modulation circuit 2 1 c 2 ⁇
- the potential of the upper electrode 14 of this element becomes the reference voltage (0 V).
- the row selection circuit 2 1 a ends when the one-child discharge period ends.
- the signal supply circuit 2 1 c generates the pulse generation circuit 2 1 c 1 via the amplitude modulation circuit 2 1 c 2.
- the reference voltage (0 V) is output as it is to all the pixel signal lines UL, so that the potential of the upper electrode 14 of the element becomes the reference voltage (0 V)
- Dipoles whose positive side polarization inversion has not been completed are reversed by positive side polarization and the remainder of the protons remaining in the emitter section 13 are released simultaneously by the Coulomb repulsion.
- the phosphor located above each element emits light and an image is displayed.
- the drive voltage application circuit 21 sequentially sets the drive voltage V in for each of the plurality of elements to the negative predetermined voltage sequentially in the charge accumulation period ⁇ d. Thereafter, when the drive voltage application circuit 21 finishes the operation of accumulating electrons for all elements, the drive voltage Vin for all elements is sometimes set as the first voltage V p 1 which is a positive predetermined voltage. Electrons are emitted from all the elements at the same time, and then the driving voltage Vin for all the elements is simultaneously set to the second voltage V ⁇ 2 which is a positive predetermined voltage, and the electrons are emitted from all the elements at the same time. Let Thereafter, when a predetermined light emission period ⁇ h elapses, the drive voltage applying circuit 21 starts the f load accumulation period T d again.
- the electron emission garment according to the first embodiment of the present invention.
- the child voltage V ka which is the potential of the upper electrode 14 relative to the potential of the lower electrode 12 is set to a negative voltage V m 2 (V m), and then the element voltage V ka is set to a positive voltage.
- a drive voltage application circuit 21 for applying a drive voltage Vin to X 3 ⁇ 4 between the lower electrode 1 2 and the upper electrode 1 4 is provided, and the drive voltage application circuit 2 1 increases the positive pressure in a step-like manner ( The first voltage VP 1 during the first electron emission period and the first voltage during the second electron emission period
- Electrons are accumulated in the X mirror. The accumulated electrons are emitted every time the device voltage V ka is increased stepwise.
- the electrons accumulated in the emitter section 1 3 in one electron accumulation operation are divided into a plurality of times and the fine through-hole 1 of the upper electrode 14 is divided into a plurality of times.
- 4a can be emitted through the shell, so even if the negative voltage applied to the device voltage Vka is increased during the shell period Td and many electrons are accumulated in the emitter
- the amount of electrons emitted in the electron emission operation is smaller than the conventional field tr, so that a large current does not flow locally in the electron-emitting device 10. It can be avoided and increase the electron emission range for a given period of time.
- the dipole in the evacuation part 1 3 makes one rotation in the period from the electron accumulation operation to the completion of the emission of electrons accumulated by the electron accumulator operation (two times Only reverse). Therefore, since the number of times of polarization inversion does not increase, deterioration of the element can be suppressed.
- the energy of the electrons that caused the phosphor 19 to collide with an excessive amount of electrons changes to heat, and the amount of light emitted from the phosphor 19 does not increase.
- the phosphor 19 emits afterglow in which the amount of light decreases with time after the collision of electrons has ended. Therefore, in the phosphor 19, an appropriate amount of electrons that cause the energy of the 3 ⁇ 4j child to change into heat are collided, and then the collision of the electrons is stopped, so that the afterglow emission amount becomes small ⁇ ⁇ When light is collided again at a critical time, it generates light with high efficiency.
- the laser is repeated a plurality of times and in a short cycle. If the electrons are emitted and collided with the phosphor, the energy of the electrons is not changed into heat, and the afterglow of the phosphor can be used, so the power consumption is lower. A large light emission can be obtained with. As a result, it is possible to provide a display device or a light-emitting device that provides a clear image with low power consumption.
- each focusing m pole has a predetermined potential (V S )
- the collector voltage application circuit 23 applies the voltage V c to the collector electrode 18 during the collector voltage application period and applies the voltage non-application period during the collector voltage application period.
- the electrons emitted through the four fine through holes 14 a can be made to collide with the phosphor 19 reliably. Further, the field formed by the collector electrode 18 can accelerate the electron by giving energy to the emitted electron, so that the light emission amount of the phosphor 19 can be increased. In addition, only the electrons emitted during the electron emission period Th can be reliably guided to the phosphor 19, and the electrons emitted during the electron accumulation period T d can be prevented from reaching the phosphor 19. Be able to
- the second embodiment is different from the electron emission device 10 only in that the drive voltage Vin is changed so as to be different from the drive voltage Vin in the electron emission device 10 of the first embodiment. In the following, this difference will be mainly described.
- the drive voltage application circuit 21 of the second embodiment is similar to the drive voltage application circuit 21 of the first embodiment in the electron accumulation period T d starting from time t 1.
- Element voltage V ka is negative voltage V m
- the drive voltage V i n set to 2 is applied between the lower electrode 12 and the upper electrode 14 (between the upper and lower electrodes). As a result, electrons are generated in the vicinity of the fine through hole 14 a in the evening portion 13.
- the drive voltage application circuit 2 1 of the second embodiment has an electron accumulation period T When d elapses and time t 2 is reached, a drive voltage V in (predetermined% pressure V p 1) with a predetermined positive voltage (first voltage) V p 1 is applied between the upper and lower electrodes. This causes a roll
- the third voltage V p 3 (I.e., the third voltage V p 3) is applied between the upper and lower electrodes.
- the third voltage V p 3 is smaller than the first voltage V p 1 and accumulates electrons in the element 1 effluent part 13. There is no Densho.
- the next electron emission (the second electron emission determination) starts without interruption.
- This continuous emission of electrons is not preferable for a device that needs to emit electrons only at a predetermined timing, such as a display device.
- the drive voltage applying circuit 21 of the second embodiment does not increase the child voltage V ka immediately after the end of the first electron emission period, but temporarily increases the element voltage V ka to the third voltage V p 3. By maintaining this at a constant value, the polarization inversion operation is temporarily stopped, and the electron emission is once completely terminated. That is, as shown in the graph of voltage unipolarization characteristics of the emitter section 13 in (B) of FIG. 17, the driving pressure application circuit 21 changes the state of the element at time t 2 1.
- the drive voltage applying circuit 2 1 sets the element voltage V ka to be higher than the first voltage V pl.
- a drive voltage V in (that is, the second voltage V p 2) having a large second voltage V p 2 is applied between the upper and lower electrodes.
- the first voltage V p which is a positive voltage, is applied to the potential of the upper electrode 14 relative to the potential of the lower electrode 12 2 (element voltage V ka) for the emission of ⁇ 3 ⁇ 4.
- the element voltage V ka is smaller than the first voltage VP 1 and the element 10 10 It is configured to temporarily HX to the voltage (third voltage) V p 3 that does not accumulate electrons in 1 3.
- the third embodiment is different from the electron emission device 10 only in that the drive voltage V in is changed so as to be different from the drive voltage V in in the electron emission device 10 of the first embodiment. Therefore, the following description will focus on this difference.
- the drive voltage applying circuit 21 of the third embodiment is similar to the drive voltage applying circuit 21 of the first embodiment in the element voltage during the electron accumulation period T d starting from time t 1.
- a drive voltage Vin that sets V ka to a negative voltage V m 2 is applied between the lower electrode 1 2 and the upper electrode 14 (between the upper and lower electrodes). As a result, electrons are accumulated in the vicinity of the fine through hole 14 a of the emitter section 13.
- the driving voltage applying circuit 21 of the third embodiment is configured to increase the driving voltage V in (and hence the element voltage V ka) at every elapse of a predetermined time when the electron accumulation period T d elapses and time t 2 is reached. Gradually increase in shape. Specifically, the drive voltage applying circuit 21 maintains the drive voltage Vin at the positive fourth voltage V p 4 for a predetermined period when the electron accumulation period T d elapses and reaches the time t 2, and then The fifth positive voltage V p 5 (V p 1> V p 5> V p 4).
- the fourth voltage V p 4 and the fifth voltage V p 5 are set to values that do not cause positive side polarization inversion, that is, voltages that are smaller than the electron emission threshold voltage V th. Therefore, when the device voltage Vka becomes the fourth voltage V p 4 and the fifth voltage V p 5, no electrons are emitted. Thereafter, the drive voltage applying circuit 21 sets the drive voltage V in to the first voltage V p 1 over the first period, and then sets the second voltage V p 2 over the second period. As a result, the first electron emission is performed in the first period, and the second electron emission is performed in the second period.
- the m-n emission device has the element voltage V ka even after the electron accumulation and before the element voltage V ka reaches the voltage necessary to start the electron emission. Is applied between the upper and lower electrodes.
- the electrons accumulated at one time can be divided and emitted several times, so that the electron emission amount can be reduced without shortening the lifetime of the child 10. It can be increased. Furthermore, although the drive voltage Vin is stepped, it is gradually increased, so that the element voltage Vka can follow the drive voltage Vin. Therefore, polarization inversion and electron emission are performed in a state where the difference between the drive voltage V in and the element voltage V ka is small. As a result, the element, the resistance component in the vicinity of the element, and the dissipation (Joule heat) in the circuit resistance are reduced.
- the element since the element is not heated, it can be avoided that the characteristics of the emitter part change due to heat. Further, since the element temperature does not increase, the gas adsorbed on the element can be gasified. It can be avoided. As a result, generation of plasma can be avoided, so that excessive emission of electrons (generation of large light emission) and damage to the child due to the ion pump can be avoided.
- the electron emission device 30 is different from the electron emission device 10 only in that the collector electrode 18 and the phosphor 19 of the electron emission device 10 are replaced with the collector electrode 18 'and the phosphor 19'. ing. Therefore, this difference will be mainly described below.
- the phosphor 1 9 ′ is formed on the back surface of the transparent plate 17 (the surface facing the upper electrode 14) and covers the phosphor 1 9 ′.
- a collector 3 ⁇ 4 pole 1 8 ′ is formed. ⁇ ⁇
- the electrode 18 ' is formed to have a thickness that allows electrons emitted from the X-mitter part 13 through the fine through-hole 14a of the upper electrode 14 to penetrate. 3 It is desirable that the thickness of the collector electrode 18 'is 100 nm or less. The thickness of the collector electrode 18' can be increased as the kinetic energy of the emitted electrons increases.
- the electron emission device 30 that penetrates 8 and enters the phosphor 19 ′ to excite the phosphor 19 and generate light can exhibit the following effects.
- a conductive material is used for the lower electrode.
- High melting point precious metals such as platinum, zidium, palladium, lodium, molybdenum
- Example 10 Mainly composed of alloys such as silver one paranium, silver one platinum, platinum one paradium, etc.
- a material mainly composed of platinum alone or a platinum-based alloy is very preferable.
- a ceramic material is added to the electrode material ⁇ ⁇ ⁇
- the proportion of the ceramic material added is about 5 to 30% by volume is preferable.
- the same material as that of the upper electrode 14 described later may be used.
- the lower electrode is preferably formed by a thick film forming method.
- the thickness of the lower electrode is preferably 20 m or less, more preferably 5 m or less.
- a dielectric having a relatively high relative dielectric constant (for example, a relative dielectric constant of 100 or more) can be used as the dielectric constituting the etta section.
- Ickelniob lead zinc niobate, lead manganese niobate, lead magnesium tantalate, lead nickel tantalate, lead antimonate stannate, lead titanate, lead magnesia tandasteate, lead cobalt niobate, etc.
- oxides described in (2) above oxides such as lanthanum, force succinum, iron tantalum, molybdenum, evening dasten, vaccum, niobium, zinc, ⁇ nickel and manganese
- oxides such as lanthanum, force succinum, iron tantalum, molybdenum, evening dasten, vaccum, niobium, zinc, ⁇ nickel and manganese
- magnesium monoobate (PMN), lead titanate are also possible.
- PMN magnesium monoobate
- lead titanate are also possible.
- t-like metal such as platinum to these dielectrics within a range in which insulation can be secured, thereby improving the n-rate.
- 1 1, for example, platinum may be mixed into an an isomer by 20 To.
- the piezoelectric Z electrostrictive layer is used for the X-ttater part, which can be used for the emitter part, a piezoelectric / strained layer, a ferroelectric layer, an antiferroelectric layer, etc.
- strained layers include: lead zirconate, lead magnesium niobate, lead nickel niobate, lead zinc diiobate, lead manganese diborate, sharp magnesium phosphate, lead nickel tantalate, lead antimonate stannate Selenium, lead titanate, barium titanate, lead magnesium tandate, cobaltate a &, or any combination thereof.
- the eta part having a main component containing 50% by weight or more of the above compound is: Most frequently used as a constituent material of the piezoelectric Z-strained layer that composes the emitter
- the positive pressure mno ⁇ A is composed of ceramics
- it is necessary to add to the ceramics of the U-U, and also to run evenings, force rusium, tungsten, molybdenum, evening dasten, ba U Um, niobium, zinc, nickel, ma Ceramics to which an oxide such as Ngan, or any combination thereof, or another compound is appropriately added may be used. Also,
- the Ceramic rather also S i O have C e ⁇ 2 P b ⁇ G e sO H hex may use ceramic box added a combination of any of these.
- PT - PZ -. PMN system the S i ⁇ 2 0 • 2 wt% to the piezoelectric material, Moshiku is a C e ⁇ 2 0 LWT%, Moshiku is P b 5 G e
- a material to which 12% by weight of 3 ⁇ is added is preferable.
- the main component is a component composed of lead magnesium niobate, lead zirconate, and lead thiocyanate, and further contains lanthanum and strontium. L using ceramics is preferred.
- Piezoelectric ⁇ electrostrictive layer may be dense or porous ⁇ In the case of porous, the porosity is preferably 40% or less
- the antiferroelectric P-electric layer is mainly composed of lead zirconate and lead zirconate and lead stannate. Ingredients In addition, lead zirconate with lanthanum oxide added, lead zirconate and lead stannate with addition of lead zirconate and lead niobate are desirable
- the dielectric layer may be porous. When porous, the porosity is preferably 30% or less
- strontium bismuthate (S r B i 2 ⁇ a 2 0
- Such a material with low polarization reversal fatigue is a layered ferroelectric compound, (
- the metal B ion is Ti 4+ Ta 5 N b 5 +, etc. ⁇ 0 o
- it is applied to barium titanate, lead zirconate, and PZT piezoelectric ceramics. It is possible to add semiconductors to semiconductors.
- the emitter is composed of piezoelectric electrostrictive / ferroelectric Z antiferroelectric ceramics, the emitter is a sheet-like molded body, a sheet-like laminate, or These can be prepared from those laminated or bonded to other supporting substrates.
- the emitter is made of a material with high agglomeration or high transpiration temperature, such as by using a lead-free material in the evening part, the electron pitch ⁇ H It is possible to obtain an area that is not easily damaged by collision.
- the X section includes various thick film formation methods such as the screen printing method, dubbing method, coating method, electrophoresis method, aerosol rare position method, etc.
- a powdered piezoelectric / electrostrictive material is formed as an X-shaped part and impregnated with a low-occupancy glass sol particle at 0, 700 ° C or 600 ° C. Films can be formed at a low temperature and below c
- an organic metal paste for example, a material such as platinum resinate paste
- a material such as platinum resinate paste for example, an oxide electrode that suppresses polarization reversal fatigue or a material in which an oxide electrode that suppresses polarization reversal fatigue is mixed with, for example, a platinum resin paste is suitable.
- oxide electrodes that suppress polarization reversal fatigue include ruthenium oxide (R u 0 2 ), iridium oxide (I r O 2 ), and strontium ruthenate (S r R uO 3 ) L a,. x S r x C o 0 3 (e.g.
- the average diameter of the fine through holes 14 a of the upper electrode 14 is preferably smaller than the particle diameter of the dielectric of the emitter section 13. Further, it is desirable that the upper electrode 14 contains a metal, and the fine through hole 14 a is a pore formed by a metal crystal grain of the metal. The manufacturing method and materials of the upper electrode 14 will be described more specifically.
- the upper electrode 14 is composed of silver (A g), gold (A u), iridium (I r), rhodium (R h), ruthenium (R u), platinum (P t), paradium (P d ), Aluminum (A 1), Copper (Cu), Nickel (N i), Chrome (C r), Molybden (M o), Tungsten (W)
- the “organic metal compound containing two or more metals” in a metal such as titanium (Ti) is made to extend in the form of a film on the upper part of the substance that becomes the emitter part 1 3, and then at a predetermined temperature. It is formed by firing.
- organometallic compound containing two or more kinds of metals means a mixture of two or more kinds of organometallic compounds containing only one kind of metal, one kind of organometallic compound containing two or more kinds of metals, Further, any one of a mixture of one organometallic compound containing two or more metals and another organometallic compound may be used.
- the “organic metal compound containing two or more kinds of metals” contains at least a noble metal. Further, it is preferable to use platinum (Pt), gold (A u), or iridium (I r) as the noble metal.
- an organometallic compound containing only one type of P t and an organometallic compound containing only one type of Ir that has a higher melting point than P t, so that P t: I r 9 7 • 3
- the mixed paste-like organometallic compound is printed on the upper surface of the substance that becomes the screen portion 13 by screen printing to extend in the form of a film. Dry at 0 0 ° C. Furthermore, the temperature was raised to 700 ° C. 3 ⁇ 4m. J3 ⁇ 4 was heated to 47 ° C for 4 minutes (47 ° C per minute).
- the temperature may be raised to C, and in that state, the substrate may be held for 30 minutes for production (firing).
- the mixed base-like organometallic compound (mixed organometallic compound) is printed on the upper surface of the substance that becomes the emitter section 13 by screen printing, and spreads in a film shape. Then, dry at 100 ° C. Furthermore, the temperature was increased to 65 ° C. at a rate of 43 ° C./min (43 ° C./min), and the temperature was raised and the temperature was maintained for 30 min. Heat treatment). Also according to the above, a suitable upper electrode 14 can be manufactured. (Example 3)
- the upper electrode 14 can also be manufactured using three types of organometallic compounds.
- organometallic compounds containing only one type of Pt as a base material, an organometallic compound containing only one type of Au having a lower melting point than Pt, and a metal having a higher melting point than Pt
- the mixed paste-like organometallic compound (mixed organometallic compound) is printed on the upper surface of the substance to be the emitter portion 1 3 by screen printing to extend into a film shape. Dry at 0 0 ° C.
- the temperature was increased to 700 ° C at a rate of 47 ° C / min (47 ° C per minute), the temperature was raised, and the temperature was maintained for 30 minutes to sinter the organic metal compound. (Heat treatment) Also by the above, a suitable upper electrode 14 can be manufactured.
- the upper electrode 14 is a substance that becomes the emitter section 13 by printing the organometallic compound (mixed organometallic compound) composed of PtAu and Ir shown in Example 2 above.
- the film was printed on the upper surface of the film and extended in the form of a film, then dried at 100 ° C and heated up to 700 ° C for 23 ° CZ seconds (per second
- the upper electrode 14 can be manufactured from only one kind of metal as follows.
- the above-mentioned predetermined metal in this case P t
- Paste-like organometallic compounds are printed on the upper surface of the material that will become the emitter part 1 3 by screen printing and extended into a film.
- the organometallic compound is baked (heat treated) by holding for 30 minutes.
- the average diameter of the fine through holes 14 a is 10 nm or more and less than 100 nm, and the amount of electron emission can be increased. As described above, the average diameter of the fine through holes 14 a may be about 0. Ol ⁇ m or more and 10 ⁇ or less.
- an aggregate of scaly substances (such as graphite)
- An aggregate of conductive substances containing scale-like substances can be used for 15 pounds.
- An aggregate of substances such as cocoons originally has a portion where the scales and scales are separated from each other. Therefore, the portion can be used as the fine through hole of the upper electrode without undergoing a heat treatment such as firing.
- the organic resin and the metal thin film are layered in this order on the semiconductor layer and then baked to burn the organic resin to form fine through holes in the metal thin film, which may be used as the upper electrode.
- the upper electrode is made of the above materials and is used for screen printing and spraying.
- Various thick film formation methods such as ting dipping, coating electrophoresis, etc., sputtering method, ion beam method, vacuum deposition method, ion plating method, chemical vapor deposition method (CVD) It can be formed by the usual film formation method by various thin film formation methods such as
- the electron-emitting device increases the driving voltage in a stepped manner to increase the number of electrons accumulated in the X-mitter section 13 by the B-element accumulation operation. Therefore, since a large current does not flow locally in the electron-emitting device, deterioration of the device due to heat generation can be avoided, and turtle emission can be increased.
- each of the electron emission devices described above grounds the collector electrode 18 when unnecessary electron emission may occur, and applies the 3 collector voltage VC to the n collector electrode 18 when electron emission is required. To do. Therefore, the electron emission device of the present invention has become a display that can provide a good image by giving sufficient light to the regularly emitted electrons while avoiding unnecessary child emission.
- the focusing electrode by adopting the focusing electrode, electrons are emitted from the upper electrode in a substantially upward direction, so that the distance between the upper electrode and the collector electrode can be increased. As a result, dielectric breakdown between the upper electrode and the collector electrode can be reduced or avoided. In addition, since the possibility of insulation breakdown between the upper electrode and the three-letter electrode is reduced, the lightning pressure V c applied to the collector electrode 18 can be increased. Giving a big X energy to the child This can improve the brightness of the display.
- the electron-emitting device of the above-described embodiment includes a plurality of electron-emitting devices.
- the focusing electrode 16 is formed of the upper electrodes 14 adjacent to each other in the X-axis direction in plan view. It may also be formed between the upper poles 14 adjacent to each other in the Y-axis direction not only between them.
- the phosphor may be formed in contact with the upper electrode 14 on the surface opposite to the X-mitter portion 13 with respect to the upper electrode 14. Electrons emitted through the fine through-holes 14 a 3 ⁇ 4r collide with the phosphor present immediately above the upper electrode 14, thereby forming a light emitting element that excites the phosphor to generate light.
- the phosphors 19, 19 described in the above embodiment are “disposed on the upper side of the upper electrode 14 so as to face the upper electrode 14, It is a phosphor that emits light when it collides with electrons.
- the electron-emitting device has four elements in one substantially square pixel PX (therefore, the first upper electrode 1 4 1 1, the first upper electrode 14 4, the first upper electrode 14 4, 2 Upper electrode 1 4 1 2? 3rd upper m pole 1 4 1 3
- a green phosphor (not shown) is directly above the first upper electrode 1 4 1 1.
- a red phosphor (not shown) is placed directly above 4-4, and the third upper electrode
- each upper electrode 1 4 is formed around each upper electrode 1 4 so as to surround each upper electrode 1 4. According to 1 , electrons emitted from the upper electrode 14 of the device to be connected are the upper electrodes 1 4 Since it reaches only the phosphor arranged just above, it is possible to maintain good color purity and avoid blurring of the image pattern.
- another electron emission device 60 comprises a lower electrode 6 2, a semiconductor unit 63, and an upper electrode 6 4.
- Independent elements are arranged on the substrate 11 1, and each element is filled with an insulator 65, and the upper m poles of the elements adjacent to each other in the X-axis direction on the upper surface of the insulator 65 Focusing electrode between 6 and 4 6 6 may be provided.
- the electron emission device 60 configured in this manner can emit electrons at an independent timing from each element or simultaneously.
- the substrate 11 may be made of a material mainly composed of aluminum oxide or a material mainly composed of a mixture of aluminum oxide and zirconium oxide.
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Abstract
Description
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US (2) | US20060132052A1 (ja) |
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US20090278595A1 (en) * | 2005-07-14 | 2009-11-12 | Braithwaite Sherman W | Braithwaite particle trap (THE BPT) |
JP2009251046A (ja) | 2008-04-01 | 2009-10-29 | Canon Inc | 画像表示装置およびその制御方法 |
KR20120113419A (ko) * | 2011-04-05 | 2012-10-15 | 삼성전자주식회사 | 발광소자 모듈 및 면광원 장치 |
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WO2003073458A1 (fr) * | 2002-02-26 | 2003-09-04 | Ngk Insulators, Ltd. | Dispositif d'emission d'electrons, procede d'activation d'un dispositif d'emission d'electrons, afficheur et procede d'activation d'un afficheur |
JP2004228063A (ja) * | 2002-11-29 | 2004-08-12 | Ngk Insulators Ltd | 電子放出素子の電子放出方法 |
EP1463022A2 (en) * | 2003-03-26 | 2004-09-29 | Ngk Insulators, Ltd. | Electron emitter display apparatus, method of driving electron emitter display apparatus, apparatus for driving electron emitter display apparatus |
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US6802752B1 (en) * | 1993-12-27 | 2004-10-12 | Canon Kabushiki Kaisha | Method of manufacturing electron emitting device |
JPH0982214A (ja) * | 1994-12-05 | 1997-03-28 | Canon Inc | 電子放出素子、電子源、及び画像形成装置 |
KR100369066B1 (ko) | 1995-12-29 | 2003-03-28 | 삼성에스디아이 주식회사 | 강유전성에미터를적용한음극구조체및이를적용한전자총과음극선관 |
US7495378B2 (en) * | 2004-07-15 | 2009-02-24 | Ngk Insulators, Ltd. | Dielectric device |
US7511409B2 (en) * | 2004-08-25 | 2009-03-31 | Ngk Insulators, Ltd. | Dielectric film element and composition |
-
2005
- 2005-09-16 US US11/229,038 patent/US20060132052A1/en not_active Abandoned
- 2005-09-20 WO PCT/JP2005/017666 patent/WO2006040919A1/ja active Application Filing
- 2005-09-26 EP EP05255956A patent/EP1650732A2/en not_active Withdrawn
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WO2003073458A1 (fr) * | 2002-02-26 | 2003-09-04 | Ngk Insulators, Ltd. | Dispositif d'emission d'electrons, procede d'activation d'un dispositif d'emission d'electrons, afficheur et procede d'activation d'un afficheur |
JP2004228063A (ja) * | 2002-11-29 | 2004-08-12 | Ngk Insulators Ltd | 電子放出素子の電子放出方法 |
EP1463022A2 (en) * | 2003-03-26 | 2004-09-29 | Ngk Insulators, Ltd. | Electron emitter display apparatus, method of driving electron emitter display apparatus, apparatus for driving electron emitter display apparatus |
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