WO2006035388A2 - Del a mecanisme de conversion du phosphore, dont la luminance est amelioree par recyclage de la lumiere - Google Patents

Del a mecanisme de conversion du phosphore, dont la luminance est amelioree par recyclage de la lumiere Download PDF

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Publication number
WO2006035388A2
WO2006035388A2 PCT/IB2005/053144 IB2005053144W WO2006035388A2 WO 2006035388 A2 WO2006035388 A2 WO 2006035388A2 IB 2005053144 W IB2005053144 W IB 2005053144W WO 2006035388 A2 WO2006035388 A2 WO 2006035388A2
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WO
WIPO (PCT)
Prior art keywords
light
light source
angular filter
filter
central wavelength
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Application number
PCT/IB2005/053144
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English (en)
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WO2006035388A3 (fr
Inventor
Hans Zou
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Koninklijke Philips Electronics N.V.
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Publication of WO2006035388A2 publication Critical patent/WO2006035388A2/fr
Publication of WO2006035388A3 publication Critical patent/WO2006035388A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • This invention pertains to the field of light sources, and more particularly, to a phosphor-converted light emitting diode (LED) light source.
  • LED phosphor-converted light emitting diode
  • LED light sources have many attributes that lend themselves to illumination of non-emissive micro-displays for projection display systems. For example, LEDs can easily be intensity modulated and therefore are well suited to frame sequential color illumination schemes.
  • an LED has limited intrinsic luminance (e.g., on the order of 10 6 cd/m 2 ).
  • high pressure arc lamps have typical luminance values on the order of 10 9 cd/m 2 .
  • the low intrinsic luminance of LEDs is viewed as a major barrier that prevents them from being used as light sources for large size projection displays.
  • an LED light source having enhanced effective brightness. It would also be desirable to provide such an LED light source which outputs light over a defined angular range. It would still further be desirable to provide such an LED light source producing linearly polarized light.
  • the present invention is directed to addressing one or more of the preceding concerns.
  • a light source comprises: a light emitting diode (LED) chip having a light emission surface and adapted to emit light having a first central wavelength, ⁇ l ; a dichroic layer on the light emission surface of the LED chip, the dichroic layer transmitting therethrough light having the first central wavelength, ⁇ l and reflecting light having a second central wavelength, ⁇ 2; a phosphor layer disposed on the dichroic layer adapted to convert the light having the first central wavelength, ⁇ l into the light having the second central wavelength, ⁇ 2; an angular filter disposed on the phosphor layer, the angular filter transmitting light having an angle of no more than ⁇ ⁇ with respect to a normal to a light receiving surface of the angular filter, and reflecting light having an angle greater than ⁇ ⁇ with respect to a normal to a light receiving surface of the angular filter; and a reflective polarizer disposed on a light emission surface of the angular filter, the reflective polarizer being adapted to transmit
  • a light source comprises: at least one light emitting diode (LED) having a light emission surface; a dichroic layer on the light emission surface of the light emitting diode; a phosphor layer disposed on the dichroic layer; and an angular filter disposed on the phosphor layer.
  • LED light emitting diode
  • FIG. 1 shows one embodiment of a phosphor-converted LED light source
  • FIG. 2 illustrates the angular-dependent transmission characteristics of an exemplary dichroic filter
  • FIG. 3 shows another embodiment of a phosphor-converted LED light source.
  • FIG. 1 shows one embodiment of a phosphor-converted LED light source 100.
  • the light source 100 includes a light emitting diode (LED) chip 1 10, a dichroic layer 120 on the LED chip 110, a phosphor layer 130 disposed on the dichroic layer 120, and an angular filter 140 disposed on the phosphor layer 130.
  • the light source further includes a heat sink 105 on which the LED chip 1 10 is mounted.
  • the LED chip 1 10 includes one (or more) emitting LEDs having a first central wavelength, ⁇ l .
  • the LED chip 1 10 has a light emission surface 1 12.
  • the dichroic layer 120, phosphor layer 130, and angular filter 140 have corresponding light emission surfaces 122, 132 and 142.
  • the angular filter also has a light receiving surface 141.
  • the phosphor layer 130 comprises a light conversion phosphor which absorbs light having the first central wavelength ⁇ l , and emits light having a second central wavelength, ⁇ 2.
  • ⁇ 2 > ⁇ l a narrowband (e.g., 30 nm), long lifetime phosphor with a high quantum efficiency.
  • the angular filter 140 comprises one of more dichroic filters, as discussed in more detail below.
  • the angular filter 140 may comprise a transparent sheet having a prismatic array, for example, a VIKUITITM Thin Brightness Enhancement Film (BEF) manufactured by 3MTM Corporation. Operation of the light source 100 will now be provided.
  • the LED chip 1 10 emits light having a first central wavelength, ⁇ l, from its light emission surface 1 12.
  • the dichroic layer 120 receives the light from the LED chip having the first central wavelength, ⁇ l and passes the light to the phosphor layer 130.
  • the phosphor in the phosphor layer 130 absorbs the light from the LED chip 1 10 having the first central wavelength ⁇ l, and emits in all directions light having the second central wavelength, ⁇ 2. As shown in FlG. 1, some of the phosphor-converted light will be scattered toward the dichroic layer 120.
  • the dichroic layer 120 is adapted to transmit therethrough light having the first central wavelength ⁇ l , and to reflect light having the second central wavelength ⁇ 2. Accordingly, the phosphor-converted light that is scattered toward the dichroic layer 120 will be reflected by the dichroic layer 120 toward the light emission surface 132 of the phosphor layer 130.
  • the angular filter 140 receives the phosphor converted light having the second central wavelength ⁇ 2 from the emission surface of the phosphor layer 130.
  • the angular . filter 140 operates such that only light rays falling within a predefined incident cone ("transmission cone") pass therethrough and are output from the light source 100 as an output light beam having a predefined cone angle. The remainder of the light, incident to the angular filter 140 at angles outside the transmission cone, is reflected by the angular filter 140 back into the phosphor layer 130.
  • the angular filter 140 transmits light having an angle of no more than ⁇ ⁇ with respect to a normal to a light receiving surface of the angular filter, and reflects light having an angle greater than ⁇ a with respect to a normal to a light receiving surface of the angular filter.
  • ⁇ is about 20°.
  • the phosphor converted light rays reflected by the angular filter 140 is recycled in the phosphor layer 130 and again eventually redirected toward the emission surface with new, randomized angles. Hence, a fraction of this recycled light will now fall within the transmission cone of the angular filter 140. Recycling will occur multiple times until all of the light (except a small fraction that is absorbed in the recycle path) is eventually scattered into the transmission cone of the angular filter 140 and therefore output from the light source 100 as part of the output light beam having the predefined cone angle.
  • a primary function of the dichroic layer 120 is to maximize output from the LED chip of light having the first central wavelength ⁇ l , and to minimize the possibility of light having the second central wavelength, ⁇ 2, from returning from the phosphor layer 130 to the LED chip 1 10.
  • the angular filter 140 beneficially comprises a dichroic filter.
  • the dichroic filer can be an edge filter whose cut-off wavelength, or transmission edge, shifts to shorter wavelengths as the light's angle of incidence increases with respect to a normal to the light receiving surface of the edge filter.
  • a band-pass filter can be used whose transmission window is matched to the wavelength of the phosphor- converted light. In that case, both the low and high cutoff wavelengths of the filter shift with increasing angle of incidence.
  • FIG. 2 illustrates the angular-dependent transmission characteristics of an exemplary dichroic filter.
  • FIG. 2 shows the transmission characteristics (transmission versus wavelength) for a cyan edge filter as a function of angle of incidence (angle between the light ray, and the normal to the light receiving surface of the filter).
  • the cyan edge filter has the greatest bandwidth for light incident at an angle of 0°, where the filter exhibits a 50% transmission up to a wavelength of about 570 nm.
  • the 50% transmission bandwidth is reduced from about 570 nm to about 520 nm.
  • the phosphor layer 130 is adapted to emit light having a second central wavelength, ⁇ 2, of about 560 nm, it is seen that over 80% of the light from the phosphor layer incident to the cyan edge filter at an angle of 0° passes through the cyan edge filter. In contrast, only about 20% of the light from the phosphor layer incident to the cyan edge filter at an angle of about 30° passes through the cyan edge filter and the bulk of the light is instead reflected back to the phosphor layer 130. Meanwhile, the incidence angle where about 50% of the light from the phosphor layer passes through the cyan edge filter is about 20°. Accordingly, when ⁇ 2 is about 560 nm, the transmission cone of an angular filter 140 comprising the cyan edge filter of FIG. 2 is about ⁇ 20°.
  • the light source 100 can provide efficient recycling of light by avoiding the high internal absorption of the LED chip 110, since the recycled light is prevented by the dichroic layer 120 from entering the LED chip 1 10 and is instead scattered by the phosphor layer 130 which is typically highly reflective and has very little internal absorption. Meanwhile, the phosphor layer 130 also provides effective angular scrambling of light rays reflected by the angular filter 140. The result is an output light beam with a defined angular distribution from a light source with a low physical profile package. Furthermore, the arrangement above can provide a significant luminance enhancement over the intrinsic luminance of the bare LED chip 110 by itself. The relationship between effective luminance and intrinsic luminance is shown in Equation 1 as:
  • f is the fraction of the light that is fed back into the light source for recycling.
  • the achievable luminance enhancement of a bare LED chip (having a reflectivity of 60%) is only about a factor of 2:1.
  • the achievable luminance enhancement (with total reflectivity of 95%) can be as high as 6.2: 1.
  • a Lambertian distribution is assumed for the initial radiation from the LED chip and the phosphor layer.
  • a light source for illumination a liquid crystal display (LCD) for example, a liquid crystal on silicon (LCOS) device
  • LCD liquid crystal display
  • LCOS liquid crystal on silicon
  • FIG. 3 shows another embodiment of a phosphor-converted LED light source 300 that outputs polarized light.
  • the light source 300 includes a light emitting diode (LED) chip 1 10, a dichroic layer 120 on the LED chip 1 10, a phosphor layer 130 disposed on the dichroic layer 120, an angular filter 140 disposed on the phosphor layer 130, and a reflective polarizer 150.
  • the light source further includes a heat sink 105 on which the LED chip 1 10 is mounted.
  • the components and operation of the light source 300, other than the reflective polarizer 150 and the linear polarization process, are the same as those of the light source
  • the reflective polarizer 150 may comprise a transparent sheet having a multi-layered coating, for example, a VIKUITITM Dual Brightness Enhancement Film (DBEF) manufactured by 3MTM
  • DBEF VIKUITITM Dual Brightness Enhancement Film
  • the reflective polarizer 150 can comprise a wire grid polarizer.
  • the reflective polarizer 150 transmits only that portion of the received light polarized in one direction, and reflects light polarized in the other, orthogonal direction.
  • the phosphor layer 130 also provides effective polarization scrambling of light rays reflected by the reflective polarizer 150.
  • the result is an output light beam with a defined angular distribution and polarization state from a light source with a low physical profile package.

Abstract

L'invention concerne une source lumineuse (300) comprenant : une puce DEL (110) émettant une lumière possédant une première longueur d'onde centrale ; une couche dichroïque (120) sur la puce DEL (110), la couche dichroïque (120) transmettant une lumière possédant la première longueur d'onde centrale et réfléchissant une lumière possédant une seconde longueur d'onde centrale ; une couche de phosphore (130), sur la couche dichroïque (130), convertissant la lumière possédant la première longueur d'onde centrale en une lumière possédant la seconde longueur d'onde centrale ; un filtre angulaire (140), sur la couche de phosphore (130), transmettant une lumière dans un cône de transmission et réfléchissant la lumière hors du cône de transmission ; et un polariseur réfléchissant (150), sur le filtre angulaire (140), transmettant une lumière possédant une première polarisation et réfléchissant une lumière possédant une seconde polarisation orthogonale à la première polarisation.
PCT/IB2005/053144 2004-09-30 2005-09-22 Del a mecanisme de conversion du phosphore, dont la luminance est amelioree par recyclage de la lumiere WO2006035388A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61473004P 2004-09-30 2004-09-30
US60/614,730 2004-09-30
US65021505P 2005-02-04 2005-02-04
US60/650,215 2005-02-04

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WO2006035388A2 true WO2006035388A2 (fr) 2006-04-06
WO2006035388A3 WO2006035388A3 (fr) 2006-06-22

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Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006087651A2 (fr) * 2005-02-16 2006-08-24 Koninklijke Philips Electronics N.V. Dispositif electroluminescent comportant une/des diode(s) electroluminescente(s) inorganique(s)
EP1887634A2 (fr) * 2006-08-11 2008-02-13 Osram Opto Semiconductors GmbH Dispositif électroluminescent à semiconducteur
WO2008040298A1 (fr) * 2006-09-29 2008-04-10 Osram Opto Semiconductors Gmbh Composant opto-électronique
WO2008092437A1 (fr) * 2007-02-02 2008-08-07 Osram Opto Semiconductors Gmbh Ensemble et procédé pour générer de la lumière mixte
DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
WO2009000257A2 (fr) * 2007-06-26 2008-12-31 Osram Opto Semiconductors Gmbh Puce semi-conductrice optoélectronique
WO2009053881A1 (fr) * 2007-10-25 2009-04-30 Koninklijke Philips Electronics N.V. Del polarisée
WO2009107056A3 (fr) * 2008-02-28 2009-12-17 Philips Intellectual Property & Standards Gmbh Dispositif à diode électroluminescente
WO2010023624A1 (fr) * 2008-08-29 2010-03-04 Philips Lumileds Lighting Company, Llc Source de lumière comprenant un dispositif électroluminescent à semi-conducteur à longueur d'onde convertie et un filtre
US20100244705A1 (en) * 2009-03-27 2010-09-30 Hajjar Roger A Detecting Screen Breakage in Display Systems
WO2012006123A2 (fr) * 2010-06-28 2012-01-12 Axlen Technologies, Inc. Formation du faisceau optique et sélection de la polarisation sur une del à conversion de la longueur d'onde
EP2472612A1 (fr) * 2010-12-29 2012-07-04 Koninklijke Philips Electronics N.V. Performance de couleur angulaire améliorée de systèmes d'éclairage à DEL blanche
JP2012199411A (ja) * 2011-03-22 2012-10-18 Stanley Electric Co Ltd 発光装置
US8657476B2 (en) 2010-12-22 2014-02-25 Energy Focus, Inc. Elongated LED lighting arrangement
RU2512091C2 (ru) * 2008-12-02 2014-04-10 Конинклейке Филипс Электроникс Н.В. Блок светодиода
US8870428B2 (en) 2012-06-20 2014-10-28 Energy Focus, Inc. Elongated LED lighting arrangement
US8964808B2 (en) 2007-12-21 2015-02-24 Osram Opto Semiconductors Gmbh Laser light source and method for producing a laser light source
US9170475B2 (en) 2013-02-27 2015-10-27 Barco N.V. Light valve projector with laser-phosphor light converter
US9711688B2 (en) 2008-12-02 2017-07-18 Koninklijke Philips N.V. Controlling LED emission pattern using optically active materials
USRE48107E1 (en) 2007-07-30 2020-07-21 Appotronics Corporation Limited Multicolor illumination device using moving plate with wavelength conversion materials
WO2021204511A1 (fr) * 2020-04-08 2021-10-14 Osram Opto Semiconductors Gmbh Dispositif émetteur de rayonnement et projecteur équipé de celui-ci
DE102021123818A1 (de) 2021-09-15 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials

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WO2004068603A2 (fr) * 2003-01-27 2004-08-12 3M Innovative Properties Company Source lumineuse a base de phosphore et son procede de fabrication
WO2004068602A2 (fr) * 2003-01-27 2004-08-12 3M Innovative Properties Company Sources lumineuses a base de phosphore comprenant un polariseur reflechissant

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US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
US20040119083A1 (en) * 2002-12-20 2004-06-24 Jung-Chieh Su White-light led with dielectric omni-directional reflectors
WO2004068603A2 (fr) * 2003-01-27 2004-08-12 3M Innovative Properties Company Source lumineuse a base de phosphore et son procede de fabrication
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Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006087651A3 (fr) * 2005-02-16 2006-10-26 Koninkl Philips Electronics Nv Dispositif electroluminescent comportant une/des diode(s) electroluminescente(s) inorganique(s)
WO2006087651A2 (fr) * 2005-02-16 2006-08-24 Koninklijke Philips Electronics N.V. Dispositif electroluminescent comportant une/des diode(s) electroluminescente(s) inorganique(s)
EP1887634A2 (fr) * 2006-08-11 2008-02-13 Osram Opto Semiconductors GmbH Dispositif électroluminescent à semiconducteur
US8354682B2 (en) 2006-08-11 2013-01-15 Osram Opto Semiconductors Gmbh Radiation emitting element
EP1887634A3 (fr) * 2006-08-11 2011-09-07 OSRAM Opto Semiconductors GmbH Dispositif électroluminescent à semiconducteur
JP2010505250A (ja) * 2006-09-29 2010-02-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス素子
WO2008040298A1 (fr) * 2006-09-29 2008-04-10 Osram Opto Semiconductors Gmbh Composant opto-électronique
US8129737B2 (en) 2006-09-29 2012-03-06 Osram Opto Semiconductors Gmbh Optoelectronic component
WO2008092437A1 (fr) * 2007-02-02 2008-08-07 Osram Opto Semiconductors Gmbh Ensemble et procédé pour générer de la lumière mixte
US8664847B2 (en) 2007-02-02 2014-03-04 Osram Opto Semiconductors Gmbh Arrangement and method for generating mixed light
TWI449207B (zh) * 2007-02-02 2014-08-11 Osram Opto Semiconductors Gmbh 產生混合光的配置及方法
DE102007025092A1 (de) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
US8405104B2 (en) 2007-05-30 2013-03-26 Osram Opto Semiconductors Gmbh Luminescent diode chip with luminescence conversion element and angular filter element
WO2008145096A1 (fr) * 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Puce de diode électroluminescente avec élément d'angle filtrant
JP2010531544A (ja) * 2007-06-26 2010-09-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング オプトエレクトロニクス半導体チップ
KR101436188B1 (ko) * 2007-06-26 2014-09-01 오스람 옵토 세미컨덕터스 게엠베하 광전 반도체칩
WO2009000257A3 (fr) * 2007-06-26 2009-02-19 Osram Opto Semiconductors Gmbh Puce semi-conductrice optoélectronique
WO2009000257A2 (fr) * 2007-06-26 2008-12-31 Osram Opto Semiconductors Gmbh Puce semi-conductrice optoélectronique
US8299484B2 (en) 2007-06-26 2012-10-30 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
USRE48107E1 (en) 2007-07-30 2020-07-21 Appotronics Corporation Limited Multicolor illumination device using moving plate with wavelength conversion materials
WO2009053881A1 (fr) * 2007-10-25 2009-04-30 Koninklijke Philips Electronics N.V. Del polarisée
US8399898B2 (en) 2007-10-25 2013-03-19 Koninklijke Philips Electronics N.V. Polarized light emitting device
US8964808B2 (en) 2007-12-21 2015-02-24 Osram Opto Semiconductors Gmbh Laser light source and method for producing a laser light source
US9407063B2 (en) 2007-12-21 2016-08-02 Osram Opto Semiconductors Gmbh Laser light source and method for producing a laser light source
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
US9559496B2 (en) 2007-12-21 2017-01-31 Osram Opto Semiconductors Gmbh Laser light source
US9559497B2 (en) 2007-12-21 2017-01-31 Osram Opto Semiconductors Gmbh Laser light source
US9531158B2 (en) 2007-12-21 2016-12-27 Osram Opto Semiconductors Gmbh Laser light source
WO2009107056A3 (fr) * 2008-02-28 2009-12-17 Philips Intellectual Property & Standards Gmbh Dispositif à diode électroluminescente
CN102138228A (zh) * 2008-08-29 2011-07-27 飞利浦拉米尔德斯照明设备有限责任公司 包括波长转换半导体发光器件和滤光器的光源
WO2010023624A1 (fr) * 2008-08-29 2010-03-04 Philips Lumileds Lighting Company, Llc Source de lumière comprenant un dispositif électroluminescent à semi-conducteur à longueur d'onde convertie et un filtre
US7888691B2 (en) 2008-08-29 2011-02-15 Koninklijke Philips Electronics N.V. Light source including a wavelength-converted semiconductor light emitting device and a filter
US9711688B2 (en) 2008-12-02 2017-07-18 Koninklijke Philips N.V. Controlling LED emission pattern using optically active materials
RU2512091C2 (ru) * 2008-12-02 2014-04-10 Конинклейке Филипс Электроникс Н.В. Блок светодиода
US20100244705A1 (en) * 2009-03-27 2010-09-30 Hajjar Roger A Detecting Screen Breakage in Display Systems
WO2012006123A2 (fr) * 2010-06-28 2012-01-12 Axlen Technologies, Inc. Formation du faisceau optique et sélection de la polarisation sur une del à conversion de la longueur d'onde
US9759843B2 (en) 2010-06-28 2017-09-12 Axlen, Inc. Optical beam shaping and polarization selection on LED with wavelength conversion
WO2012006123A3 (fr) * 2010-06-28 2012-04-26 Axlen Technologies, Inc. Formation du faisceau optique et sélection de la polarisation sur une del à conversion de la longueur d'onde
US8657476B2 (en) 2010-12-22 2014-02-25 Energy Focus, Inc. Elongated LED lighting arrangement
EP2472612A1 (fr) * 2010-12-29 2012-07-04 Koninklijke Philips Electronics N.V. Performance de couleur angulaire améliorée de systèmes d'éclairage à DEL blanche
JP2012199411A (ja) * 2011-03-22 2012-10-18 Stanley Electric Co Ltd 発光装置
US8870428B2 (en) 2012-06-20 2014-10-28 Energy Focus, Inc. Elongated LED lighting arrangement
US9170475B2 (en) 2013-02-27 2015-10-27 Barco N.V. Light valve projector with laser-phosphor light converter
WO2021204511A1 (fr) * 2020-04-08 2021-10-14 Osram Opto Semiconductors Gmbh Dispositif émetteur de rayonnement et projecteur équipé de celui-ci
DE102021123818A1 (de) 2021-09-15 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials

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