WO2006029802A3 - Integrierte halbleiter-kaskodenschaltung für hochfrequenzanwendungen - Google Patents

Integrierte halbleiter-kaskodenschaltung für hochfrequenzanwendungen Download PDF

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Publication number
WO2006029802A3
WO2006029802A3 PCT/EP2005/009810 EP2005009810W WO2006029802A3 WO 2006029802 A3 WO2006029802 A3 WO 2006029802A3 EP 2005009810 W EP2005009810 W EP 2005009810W WO 2006029802 A3 WO2006029802 A3 WO 2006029802A3
Authority
WO
WIPO (PCT)
Prior art keywords
cascode circuit
area
integrated semiconductor
frequency applications
semiconductor cascode
Prior art date
Application number
PCT/EP2005/009810
Other languages
English (en)
French (fr)
Other versions
WO2006029802A2 (de
Inventor
Peter Brandl
Original Assignee
Atmel Germany Gmbh
Peter Brandl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Germany Gmbh, Peter Brandl filed Critical Atmel Germany Gmbh
Priority to EP05784791A priority Critical patent/EP1790010A2/de
Publication of WO2006029802A2 publication Critical patent/WO2006029802A2/de
Publication of WO2006029802A3 publication Critical patent/WO2006029802A3/de
Priority to US11/717,659 priority patent/US7723198B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Abstract

Vorgestellt wird eine Integrierte Halbleiter-Kaskodenschaltung (46) mit einer Emitterschicht (12), einem ersten Basisbereich (14), einem zweiten Basisbereich (16), einem Zwischenbereich (18) und einem Kollektorbereich (26), wobei der erste Basisbereich (14) zwischen der.Emitterschicht (12) und dem Zwischenbereich (18) liegt, und der zweite Basisbereich (16) zwischen dem Zwischenbereich (18) und dem Kollektorbereich (26) liegt. Die Halbleiter-Kaskodenschaltung (46) zeichnet sich dadurch aus, dass zwischen dem. ersten Basisbereich (14) und dem zweiten Basisbereich (16) eine mit einer zentralen Öffnung (50) versehene dielektrische Schicht (48) angeordnet ist. Ferner wird ein Verfahren zur Herstellung einer solchen Halbleiter-Kaskodenschaltung (46) vorgestellt.
PCT/EP2005/009810 2004-09-14 2005-09-13 Integrierte halbleiter-kaskodenschaltung für hochfrequenzanwendungen WO2006029802A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05784791A EP1790010A2 (de) 2004-09-14 2005-09-13 Integrierte halbleiter-kaskodenschaltung für hochfrequenzanwendungen
US11/717,659 US7723198B2 (en) 2004-09-14 2007-03-14 Integrated semiconductor cascode circuit for high-frequency applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004044835.3 2004-09-14
DE102004044835A DE102004044835B4 (de) 2004-09-14 2004-09-14 Integrierte Halbleiter-Kaskodenschaltung für Hochfrequenzanwendungen

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/717,659 Continuation US7723198B2 (en) 2004-09-14 2007-03-14 Integrated semiconductor cascode circuit for high-frequency applications

Publications (2)

Publication Number Publication Date
WO2006029802A2 WO2006029802A2 (de) 2006-03-23
WO2006029802A3 true WO2006029802A3 (de) 2006-07-13

Family

ID=35853625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/009810 WO2006029802A2 (de) 2004-09-14 2005-09-13 Integrierte halbleiter-kaskodenschaltung für hochfrequenzanwendungen

Country Status (4)

Country Link
US (1) US7723198B2 (de)
EP (1) EP1790010A2 (de)
DE (1) DE102004044835B4 (de)
WO (1) WO2006029802A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8310027B2 (en) * 2008-06-12 2012-11-13 Infineon Technologies Ag Electronic device and manufacturing method thereof
AU2012314518B2 (en) * 2011-09-27 2017-06-29 F. Hoffmann-La Roche Ag Pyrazol-4-yl-heterocyclyl-carboxamide compounds and methods of use
CN107482057B (zh) * 2017-06-29 2019-04-09 厦门市三安集成电路有限公司 多重外延层的共射共基晶体管

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073810A (en) * 1989-11-07 1991-12-17 Hitachi, Ltd. Semiconductor integrated circuit device and manufacturing method thereof
US5399899A (en) * 1992-12-28 1995-03-21 U.S. Philips Corporation Bipolar epitaxial cascode with low-level base connection

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175603A (en) 1988-01-30 1992-12-29 Kabushiki Kaisha Toshiba Bipolar transistor
DE3901881A1 (de) * 1988-01-30 1989-08-10 Toshiba Kawasaki Kk Bipolartransistor
IT1246759B (it) * 1990-12-31 1994-11-26 Sgs Thomson Microelectronics Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.
US6479844B2 (en) * 2001-03-02 2002-11-12 University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US7556976B2 (en) * 2002-10-25 2009-07-07 The University Of Connecticut Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073810A (en) * 1989-11-07 1991-12-17 Hitachi, Ltd. Semiconductor integrated circuit device and manufacturing method thereof
US5399899A (en) * 1992-12-28 1995-03-21 U.S. Philips Corporation Bipolar epitaxial cascode with low-level base connection

Also Published As

Publication number Publication date
US7723198B2 (en) 2010-05-25
US20070166940A1 (en) 2007-07-19
WO2006029802A2 (de) 2006-03-23
EP1790010A2 (de) 2007-05-30
DE102004044835B4 (de) 2008-12-11
DE102004044835A1 (de) 2006-03-16

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