Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/311—Etching the insulating layers by chemical or physical means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/311—Etching the insulating layers by chemical or physical means
  • H01L21/31105—Etching inorganic layers
  • H01L21/31111—Etching inorganic layers by chemical means
  • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/321—After treatment
  • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/321—After treatment
  • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
  • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Definitions

• the present invention relates to a method of etching a gate stack in the formation of semiconductor devices and, more particularly, to a method and system for etching a tunable etch resistant anti-reflective coating.
• pattern etching includes the application of a patterned mask of radiation-sensitive material, such as photoresist, to a thin film on an upper surface of a substrate, and transferring the mask pattern to the underlying thin film by etching.
• the patterning of the radiation-sensitive material generally involves coating an upper surface of the substrate with a thin film of radiation-sensitive material and then exposing the thin film of radiation-sensitive material to a radiation source through a reticle (and associated optics) using, for example, a photolithography system.
• a developing process is performed, during which the removal of the irradiated regions of the radiation-sensitive material occurs (as in the case of positive photoresist), or the removal of non-irradiated regions occurs (as in the case of negative resist) using a base developing solution, or solvent.
• the remaining radiation-sensitive material exposes the underlying substrate surface in a pattern that is ready to be etched into the surface.
• Photolithographic systems for performing the above-described material processing methodologies have become a mainstay of semiconductor device patterning for the last three decades, and are expected to continue in that role down to 65 nm resolution, and less. [0004]
• NA n - ⁇ n ⁇ o . (2)
• Angle ⁇ 0 is the angular semi-aperture of the system, and n is the index of refraction of the material filling the space between the system and the substrate to be patterned.
• a bilayer or multilayer mask can be formed that incorporates a bottom anti-reflective coating (BARC).
• BARC bottom anti-reflective coating
• the BARC layer includes a thin absorbing film to reduce thin film interference; however, the BARC layer can still suffer from several limitations including poor thickness uniformity due in part to spin-on deposition techniques.
• a hard mask may also be used to provide improved maintenance of critical dimensions.
• the hard mask may be a vapor deposited thin film provided under the light sensitive layer to provide better etch selectivity than the light sensitive layer alone. This etch selectivity of the hard mask material permits use of a thinner mask that allows greater resolution while also allowing a deeper etch process.
• the present inventors have recognized, however, that the use of conventional hard masks have limited etch selectivity and resilience to etch processes that will limit their use in future generation devices with even smaller structures.
• One aspect of the present invention is to reduce or eliminate any or all of the above-described problems.
• Another object of the present invention is to provide a method of etching a layer to improve etch characteristics.
• Yet another aspect of the present invention is to provide a method of etching a tunable etch resistant anti-reflective (TERA) coating.
• a method of preparing a structure on a substrate includes forming a tunable etch resistant anti- reflective (TERA) coating on the substrate, the TERA coating comprising a structural formula R:C:H:X, wherein R is selected from the group including at least one of Si, Ge, B, Sn, Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group including one or more of O, N, S, and F.
• a layer of light-sensitive material is formed on the TERA coating.
• a pattern is formed in the layer of light-sensitive material, and the pattern is transferred to the thin film using an etch process including SF ⁇ .
• a method of etching a TERA coating includes disposing a substrate in a plasma processing system, the substrate having the TERA coating, wherein the TERA coating comprises a structural formula R:C:H:X, where R is selected from the group comprising at least one of Si, Ge, B, Sn, Fe, Ti, and combinations thereof, and where X is not present or is selected from the group comprising one or more of O, N, S, and F.
• a process gas is introduced having SF 6 , a plasma is formed from the process gas, and the substrate is exposed to the plasma.
• the system includes a process chamber, a substrate holder coupled to the process chamber, and configured to support the substrate, wherein the substrate includes a TERA coating having a structural formula R:C:H:X, wherein R is selected from the group comprising at least one of Si, Ge, B, Sn, Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group comprising one or more of O, N, S, and F, a gas injection system coupled to the process chamber, and configured to introduce a process gas having SF ⁇ .and a plasma source coupled to the process chamber, and configured to form a plasma from the process gas.
• R is selected from the group comprising at least one of Si, Ge, B, Sn, Fe, Ti, and combinations thereof
• X is not present or is selected from the group comprising one or more of O, N, S, and F
• a gas injection system coupled to the process chamber, and configured to introduce a process gas having SF ⁇ .and a plasma source coupled to the process chamber, and configured to form
• FIGs. 1A and 1B illustrate a film stack including a tunable etch resistant anti-reflective (TERA) coating
• FIGs. 2A and 2B illustrate another film stack including a TERA coating
• FIG. 3 shows a method for etching a TERA coating according to an embodiment of the invention
• FIG. 4 shows a simplified schematic diagram of a plasma processing system according to an embodiment of the present invention
• FIG. 5 shows a schematic diagram of a plasma processing system according to another embodiment of the present invention.
• FIG. 6 shows a schematic diagram of a plasma processing system according to another embodiment of the present invention.
• FIG. 7 shows a schematic diagram of a plasma processing system according to another embodiment of the present invention.
• FIG. 8 shows a schematic diagram of a plasma processing system according to another embodiment of the present invention. Detailed Description of Exemplary Embodiments
• hard masks As described earlier, the use of a hard mask has been adopted to complement the lithographic structure, and can be utilized in applications where the specifications for critical dimensions are stringent.
• One variety of hard masks can be broadly classified as having a structural formula R:C:H:X, wherein R is selected from the group comprising at least one of Si, Ge, B, Sn 1 Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group comprising one or more of O, N, S, and F.
• Such hard masks can be referred to as a tunable etch resistant anti-reflective (TERA) coating.
• TERA tunable etch resistant anti-reflective
• TERA coatings can be produced having a tunable index of refraction and extinction coefficient which can be optionally graded along the film thickness to match the optical properties of the substrate with the imaging light-sensitive layer.
• U.S. Patent No. 6,316,167 assigned to International Business Machines Corporation, which is incorporated herein by reference in its entirety, describes such.
• TERA films are used in lithographic structures for front end of line (FEOL) operations, such as gate formation, where control of the critical dimension is very important.
• FEOL front end of line
• TERA coatings provide substantial improvement to the lithographic structure for forming gate devices at the 65 nm device node and smaller.
• pattern etching utilizing such a lithographic structure generally includes the application of a thin layer of light-sensitive material, such as photoresist, to an upper surface of a substrate, that is subsequently patterned in order to provide a mask for transferring this pattern to the underlying hard mask during etching.
• a thin layer of light-sensitive material such as photoresist
• the present inventors have discovered, however, that conventional hard mask films such as TERA coatings can be damaged during processing steps using conventional etch chemistries.
• a CHF 3 -based etch chemistry such as CHF 3 /N 2 or CHF 3 /N 2 /O 2 , can lead to poor etch selectivity between the TERA coating and underlying layers, poor sidewall profile control, and excessive deposition.
• CI 2 -based etch chemistries such as Cl 2 , CVCHF 3 , CI 2 /O 2 , CI 2 ZC 4 F 8 or CI 2 /CH2F 2
• Cl 2 , CVCHF 3 , CI 2 /O 2 , CI 2 ZC 4 F 8 or CI 2 /CH2F 2 can lead to poor etch selectivity to photoresist as well as underlying layers, and profile undercutting.
• the present inventors have discovered that an alternative etch chemistry can lead to improved etch characteristics.
• FIGs. 1A and 1B show a conventional etching process for a hard mask layer, such as a TERA coating, wherein the invention can be applied.
• a film stack 100 is formed having a substrate 101 , a thin film 102, such as a TERA coating, formed on the substrate 101 , and a layer of light- sensitive material 104 formed on the thin film 102.
• a pattern 106 can be formed in the layer of light-sensitive material 104 using conventional lithographic techniques.
• FIG. 1 B 1 the pattern 106 in the light-sensitive layer 104 is transferred to the thin film 102 using an etch step.
• the invention can be applied to a gate stack, such as film stack 110 shown in FIGs.
• the film stack 110 is formed having a substrate 111 , a gate oxide layer 112 (such as a silicon oxide layer, or high dielectric constant oxide layer), a gate polysilicon layer 114, a nitride layer 116 (such as a silicon nitride layer), an oxide layer 118, a hard mask 120 (such as a TERA coating), a cap layer 122 (such as a layer containing Si, C, O, H), and a layer of light-sensitive material 124.
• a pattern 126 can formed in the layer of light-sensitive material 124 using conventional lithographic techniques. As seen in FIG. 2B, the pattern 126 in the light-sensitive layer 124 is transferred to the cap layer 122 and the hard mask 120 using an etch step.
• a process gas including SF 6 is introduced to a plasma processing system in order to form a fluorinated plasma. Thereafter, a substrate having a patterned layer of light-sensitive material, such as photoresist, is exposed to the plasma in order to transfer the pattern into an underlying TERA coating.
• a substrate having a patterned layer of light-sensitive material, such as photoresist is exposed to the plasma in order to transfer the pattern into an underlying TERA coating.
• the present inventors have discovered that etching the TERA coating using a SF ⁇ -based etch chemistry improves the etch characteristics of the hard mask.
• FIG. 3 a method of etching a TERA coating in a film stack is described.
• the method is illustrated as a flow chart 200 beginning in 210 with forming a TERA coating on a substrate as in FIGs. 1A and 1B, or 2A and 2B.
• the TERA coating can be formed using vapor deposition techniques, such as chemical vapor deposition (CVD), or plasma enhanced chemical vapor deposition (PECVD).
• CVD chemical vapor deposition
• PECVD plasma enhanced chemical vapor deposition
• the TERA coating includes a structural formula R:C:H:X, wherein R is selected from the group comprising at least one of Si 1 Ge, B, Sn, Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group comprising one or more of O, N, S, and F.
• the TERA coating can be fabricated to demonstrate an optical range for an index of refraction of approximately 1.40 ⁇ n ⁇ 2.60, and for an extinction coefficient of approximately 0.01 ⁇ k ⁇ 0.78. Alternately, at least one of the index of refraction and the extinction coefficient can be graded (or varied) along a thickness of the TERA coating. Additional details are provided in U.S. Patent No. 6,316,167.
• the TERA coating can be formed using PECVD, as described in greater detail in pending U.S. Patent Application Serial No. 10/644,958, entitled “Method and apparatus for depositing materials with tunable optical properties and etching characteristics", filed on August 21 , 2003, the entire contents of which are incorporated herein by reference in their entirety.
• the optical properties of the TERA coating such as the index of refraction, can be selected so as to substantially match the optical properties of the underlying layer, or layers.
• underlying layers such as non-porous dielectric films can require achieving an index of refraction in the range of 1.4 ⁇ n ⁇ 2.6
• underlying layers such as porous dielectric films can require achieving an index of refraction in the range of 1.2 ⁇ n ⁇ 2.6.
• a layer of light-sensitive material is formed on the substrate.
• the layer of light-sensitive material can include a photoresist.
• the layer (or layers) of light-sensitive material can be formed using a track system.
• the track system can be configured for processing 248 nm resists, 193 nm resists, 157 nm resists, EUV resists, (top/bottom) anti-reflective coatings (TARC/BARC), and top coats.
• the track system can include a Clean Track ACT® 8, or Clean Track ACT® 12 resist coating and developing system commercially available from Tokyo Electron Limited (TEL).
• TEL Tokyo Electron Limited
• Other systems and methods for forming a photoresist film on a substrate are well known to those skilled in the art of spin-on resist technology.
• the layer of light-sensitive material can be patterned with a pattern using micro-lithography in 230, followed by the removal of the irradiated regions of the light-sensitive material (as in the case of positive photoresist), or non-irradiated regions (as in the case of negative resist) using a developing solvent.
• the micro-lithography system can include any suitable conventional stepping lithographic system, or scanning lithographic system.
• the pattern formed in the layer of light-sensitive material is transferred to the underlying TERA coating using a dry etch process.
• the dry etch process includes a SF 6 -based etch chemistry.
• the etch chemistry can further include an oxygen-containing gas, such as O2, CO, or CO 2 .
• the etch chemistry can further include a nitrogen-containing gas, such as N 2 or NH 3 .
• the etch chemistry can further include an inert gas, such as a Noble gas (i.e., helium, neon, argon, xenon, krypton, radon).
• the etch chemistry can further include another halogen-containing gas, such as Cl 2 , HBr, CHF 3 , or CH 2 F 2 .
• the etch chemistry can further include a fluorocarbon gas, such as gas having the structure C x F y (e.g., CF 4 , C 4 F 8 , C 4 F 6 , C 3 F 6 , C 5 F 8 , etc.).
• FIG. 4 presents an exemplary plasma processing system 1 that may be used to implement a process of the present invention.
• the plasma processing system 1 includes a plasma processing chamber 10, a diagnostic system 12 coupled to the plasma processing chamber 10, and a controller 14 coupled to the diagnostic system 12 and the plasma processing chamber 10.
• the controller 14 is configured to execute a process recipe including an etching process. Additionally, the controller 14 is configured to receive at least one endpoint signal from the diagnostic system 12 and to post-process the at least one endpoint signal in order to accurately determine an endpoint for the process.
• plasma processing system 1 depicted in FIG. 4, utilizes a plasma for material processing.
• the plasma processing system 1 can include an etch chamber.
• a plasma processing system 1a used in accordance with the present invention can include the plasma processing chamber 10, substrate holder 20, upon which a substrate 25 to be processed is affixed, and vacuum pumping system 30.
• the substrate 25 can be, for example, a semiconductor substrate, a wafer or a liquid crystal display.
• the plasma processing chamber 10 can be, for example, configured to facilitate the generation of plasma in a processing region 15 adjacent to a surface of the substrate 25.
• An ionizable gas or mixture of gases is introduced via a gas injection system (such as a gas injection pipe, or gas injection showerhead) and the process pressure is adjusted.
• a control mechanism (not shown) can be used to throttle the vacuum pumping system 30.
• Plasma can be utilized to create materials specific to a pre-determined materials process and/or to aid the removal of material from the exposed surfaces of the substrate 25.
• the plasma processing system 1a can be configured to process 200 mm substrates, 300 mm substrates, or larger.
• the substrate 25 can be, for example, affixed to the substrate holder 20 via an electrostatic clamping system.
• the substrate holder 20 can, for example, further include a cooling system including a re-circulating coolant flow that receives heat from the substrate holder 20 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
• gas can, for example, be delivered to the back ⁇ side of the substrate 25 via a backside gas system to improve the gas-gap thermal conductance between the substrate 25 and the substrate holder 20.
• a backside gas system can be utilized when temperature control of the substrate 25 is required at elevated or reduced temperatures.
• the backside gas system can include a two-zone gas distribution system, wherein the helium gas gap pressure can be independently varied between the center and the edge of the substrate 25.
• heating/cooling elements such as resistive heating elements, or thermo-electric heaters/coolers can be included in the substrate holder 20, as well as the chamber wall of the plasma processing chamber 10 and any other component within the plasma processing system 1a.
• the substrate holder 20 can include an electrode through which RF power is coupled to the processing plasma in the process space 15.
• the substrate holder 20 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator 40 through an impedance match network 50 to the substrate holder 20.
• the RF bias can serve to heat electrons to form and maintain a plasma.
• the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and an upper gas injection electrode serve as ground surfaces.
• RIE reactive ion etch
• a typical frequency for the RF bias can range from 0.1 MHz to 100 MHz.
• RF systems for plasma processing are well known to those skilled in the art.
• RF power is applied to the substrate holder electrode at multiple frequencies.
• the impedance match network 50 serves to improve the transfer of RF power to plasma in the plasma processing chamber 10 by reducing the reflected power.
• Match network topologies e.g., L-type, ⁇ - type, T-type, etc.
• automatic control methods are well known to those skilled in the art.
• the vacuum pump system 30 can, for example, include a turbo-molecular vacuum pump (TMP) capable of a pumping speed up to 5000 liters per second (and greater) and a gate valve for throttling the chamber pressure.
• TMP turbo-molecular vacuum pump
• a 1000 to 3000 liter per second TMP is generally employed.
• TMPs are useful for low pressure processing, typically less than 50 mTorr.
• a mechanical booster pump and dry roughing pump can be used.
• a device for monitoring chamber pressure (not shown) can be coupled to the plasma processing chamber 10.
• the pressure measuring device can be, for example, a Type 628B Baratron absolute capacitance manometer commercially available from MKS Instruments, Inc. (Andover, MA).
• the controller 14 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to the plasma processing system 1a as well as monitor outputs from the plasma processing system 1a. Moreover, the controller 14 can be coupled to and can exchange information with the RF generator 40, the impedance match network 50, the gas injection system (not shown), the vacuum pump system 30, the diagnostic system 12, as well as the backside gas delivery system (not shown), the substrate/substrate holder temperature measurement system (not shown), and/or the electrostatic clamping system (not shown).
• a program stored in the memory can be utilized to activate the inputs to the aforementioned components of the plasma processing system 1a according to a process recipe in order to perform an etching process.
• the controller 14 is a DELL PRECISION WORKSTATION 610TM, available from Dell Corporation, Austin, Texas.
• the controller 14 can be locally located relative to the plasma processing system 1a, or it can be remotely located relative to the plasma processing system 1a.
• the controller 14 can exchange data with the plasma processing system 1a using at least one of a direct connection, an intranet, and the Internet.
• the controller 14 can be coupled to an intranet at, for example, a customer site (i.e., a device maker, etc.), or it can be coupled to an intranet at, for example, a vendor site (i.e., an equipment manufacturer). Additionally, for example, the controller 14 can be coupled to the Internet. Furthermore, another computer (i.e., controller, server, etc.) can, for example, access the controller 14 to exchange data via at least one of a direct connection, an intranet, and the Internet. Also, data may be transferred via a wired or a wireless connection, as would be appreciated by those skilled in the art.
• the diagnostic system 12 can include an optical diagnostic subsystem (not shown).
• the optical diagnostic subsystem can include a detector such as a (silicon) photodiode or a photomultiplier tube (PMT) for measuring the light intensity emitted from the plasma.
• the diagnostic system 12 can further include an optical filter such as a narrow-band interference filter.
• the diagnostic system 12 can include at least one of a line CCD (charge coupled device), a CID (charge injection device) array, and a light dispersing device such as a grating or a prism.
• the diagnostic system 12 can include a monochromator (e.g., grating/detector system) for measuring light at a given wavelength, or a spectrometer (e.g., with a rotating grating) for measuring the light spectrum such as, for example, the device described in U.S. Patent No. 5,888,337, the contents of which are incorporated herein by reference in their entirety.
• a monochromator e.g., grating/detector system
• a spectrometer e.g., with a rotating grating
• the diagnostic system 12 can include a high resolution Optical Emission Spectroscopy (OES) sensor such as from Peak Sensor Systems, or Verity Instruments, Inc.
• OES Optical Emission Spectroscopy
• Such an OES sensor has a broad spectrum that spans the ultraviolet (UV), visible (VIS), and near infrared (NIR) light spectrums. The resolution is approximately 1.4 Angstroms, that is, the sensor is capable of collecting 5550 wavelengths from 240 to 1000 nm.
• the OES sensor can be equipped with high sensitivity miniature fiber optic UV-VIS-NIR spectrometers which are, in turn, integrated with 2048 pixel linear CCD arrays.
• the spectrometers receive light transmitted through single and bundled optical fibers, where the light output from the optical fibers is dispersed across the line CCD array using a fixed grating. Similar to the configuration described above, light emitting through an optical vacuum window is focused onto the input end of the optical fibers via a convex spherical lens. Three spectrometers, each specifically tuned for a given spectral range (UV, VIS and NIR), form a sensor for a process chamber. Each spectrometer includes an independent A/D converter. And lastly, depending upon the sensor utilization, a full emission spectrum can be recorded every 0.1 to 1.0 seconds.
• the diagnostic system 12 can include a system for performing optical digital profilometry, such as the system offered by Timbre Technologies, Inc. (2953 Bunker Hill Lane, Suite 301 , Santa Clara, CA 95054).
• a plasma processing system 1 b that may be used to implement the present invention can, for example, be similar to the embodiment of FIG. 4 or FIG. 5 and can further include either a stationary, or mechanically or electrically rotating magnetic field system 60, in order to potentially increase plasma density and/or improve plasma processing uniformity, in addition to those components described with reference to FIG. 4 and FIG. 5.
• the controller 14 can be coupled to the magnetic field system 60 in order to regulate the speed of rotation and field strength.
• the design and implementation of a rotating magnetic field is well known to those skilled in the art.
• a plasma processing system 1c that may be used to implement the present invention can, for example, be similar to the embodiment of FIG. 4 or FIG. 5, and can further include an upper electrode 70 to which RF power can be coupled from an RF generator 72 through an impedance match network 74.
• a typical frequency for the application of RF power to the upper electrode 70 can range from 0.1 MHz to 200 MHz.
• a typical frequency for the application of power to the lower electrode can range from 0.1 MHz to 100 MHz.
• the controller 14 is coupled to the RF generator 72 and the impedance match network 74 in order to control the application of RF power to the upper electrode 70.
• the design and implementation of an upper electrode is well known to those skilled in the art.
• a plasma processing system 1d that may be used to implement the present invention can, for example, be similar to the embodiments of FIGs. 4 and 5, and can further include an inductive coil 80 to which RF power is coupled via an RF generator 82 through an impedance match network 84.
• RF power is inductively coupled from the inductive coil 80 through a dielectric window (not shown) to the plasma processing region 15.
• a typical frequency for the application of RF power to the inductive coil 80 can range from 10 MHz to 100 MHz.
• a typical frequency for the application of power to the chuck electrode can range from 0.1 MHz to 100 MHz.
• a slotted Faraday shield (not shown) can be employed to reduce capacitive coupling between the inductive coil 80 and plasma.
• the controller 14 is coupled to the RF generator 82 and the impedance match network 84 in order to control the application of power to the inductive coil 80.
• the inductive coil 80 can be a "spiral" coil or "pancake” coil in communication with the plasma processing region 15 from above as in a transformer coupled plasma (TCP) reactor.
• TCP transformer coupled plasma
• ICP inductively coupled plasma
• TCP transformer coupled plasma
• the plasma can be formed using electron cyclotron resonance (ECR).
• ECR electron cyclotron resonance
• the plasma can be formed from the launching of a Helicon wave.
• the plasma can be formed from a propagating surface wave.
• an etch process can be performed in a plasma processing system, such as the system described in FIG. 7, wherein the process parameter space can comprise a chamber pressure of about 5 to about 200 mTorr, a SF 6 process gas flow rate ranging from about 5 to about 1000 seem, an upper electrode (e.g., element 70 in FIG. 7) RF bias ranging from about 50 to about 500 W, a lower electrode (e.g., element 20 in FIG. 7) RF bias ranging from about 10 to about 500 W, the upper electrode bias frequency can range from about 0.1 MHz to about 200 MHz, e.g., 60 MHz, and the lower electrode bias frequency can range from about 0.1 MHz to about 100 MHz, e.g., 2 MHz.
• the process parameter space can comprise a chamber pressure of about 5 to about 200 mTorr, a SF 6 process gas flow rate ranging from about 5 to about 1000 seem, an upper electrode (e.g., element 70 in FIG. 7) RF bias ranging from about 50 to about 500

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Inorganic Chemistry (AREA)
• Drying Of Semiconductors (AREA)
• Electrodes Of Semiconductors (AREA)
• Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Priority Applications (1)

Applications Claiming Priority (2)

Publications (1)

Family

ID=35058277

Family Applications (1)

Country Status (5)

Families Citing this family (6)

Citations (1)

Family Cites Families (21)

• 2004
  • 2004-08-26 US US10/926,404 patent/US20060049139A1/en not_active Abandoned
• 2005
  • 2005-06-30 KR KR1020077002485A patent/KR20070051846A/ko not_active Withdrawn
  • 2005-06-30 WO PCT/US2005/023943 patent/WO2006025944A1/en not_active Ceased
  • 2005-06-30 JP JP2007529849A patent/JP2008511167A/ja not_active Withdrawn
  • 2005-08-10 TW TW094127126A patent/TWI286840B/zh not_active IP Right Cessation

Patent Citations (1)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events