WO2006021298A1 - Laser a diodes comportant un systeme optique destine a augmenter la radiance d'un faisceau laser de sortie emis par le laser - Google Patents

Laser a diodes comportant un systeme optique destine a augmenter la radiance d'un faisceau laser de sortie emis par le laser Download PDF

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Publication number
WO2006021298A1
WO2006021298A1 PCT/EP2005/008393 EP2005008393W WO2006021298A1 WO 2006021298 A1 WO2006021298 A1 WO 2006021298A1 EP 2005008393 W EP2005008393 W EP 2005008393W WO 2006021298 A1 WO2006021298 A1 WO 2006021298A1
Authority
WO
WIPO (PCT)
Prior art keywords
diode laser
bragg grating
volume bragg
laser
diode
Prior art date
Application number
PCT/EP2005/008393
Other languages
German (de)
English (en)
Inventor
Bernd Köhler
Jens Biesenbach
Matthias Haag
Original Assignee
Dilas Diodenlaser Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dilas Diodenlaser Gmbh filed Critical Dilas Diodenlaser Gmbh
Priority to JP2007526332A priority Critical patent/JP2008511131A/ja
Priority to EP05775011A priority patent/EP1779482A1/fr
Publication of WO2006021298A1 publication Critical patent/WO2006021298A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • Diode laser with an optical device for increasing the radiance of an output laser beam emerging from it
  • the invention relates to a diode laser with an optical device for increasing the intensity of an output laser beam emerging from it.
  • a diode laser contains an opto ⁇ electronic semiconductor chip, the so-called laser diode, which, in particular in the case of diode lasers, can consist of a plurality of individual emitters arranged side by side.
  • An embodiment for achieving high optical output power is a monolithic arrangement of individual emitters in a so-called laser diode bar.
  • Such a laser diode bar is typically about 5-10 mm wide (lateral), 0.10-0.15 mm high (vertical) and has resonator lengths of between 0.3 and 2.5 mm (transversal).
  • the laser radiation generated in the pn junctions of the laser diode emerges on one of the lateral sides (exit or front side, emitter face).
  • the opposite side (back) is highly reflective mirrored and forms the rear view mirror of the resonator.
  • Each laser diode bar generates a narrow approximately rectangular laser beam which is composed of a plurality of partial beams which emerge from the individual emitters and whose beam properties in the lateral direction of the laser diode bar (width), the so-called slow axis, of the jet properties in the perpendicular Axis (epitaxial direction), the so-called fast axis, significantly differ.
  • the laser diode bars and the need in a high-performance diode lasers several such laser diode bars complex due ⁇ this highly asymmetric beam properties ne ⁇ by side or one another to be arranged in a stack, er ⁇ calls in particular for the construction of a high-power diode laser usually optical devices for beam shaping, ie for beam symmetrization and Strahlüber ⁇ storage. This applies in particular to diode lasers in which the laser beam is coupled into an optical fiber and the line-shaped beam of the individual laser diode bars must be converted into a nearly square, or ideally round, profile. Diode lasers with such beam shaping devices are known, for example, from DE 196 45 150 C2, DE 198 46 532 C1 and DE 100 15 245 C2.
  • a polarization coupling As is known, for example, from DE 198 46 532 C1 for the coupling of two laser diode barren stacks, due to the only two independent degrees of polarization, only a maximum increase in the beam density by a factor of two can be achieved.
  • a wavelength coupling is fundamentally possible for a large number of partial beams, as long as they differ only sufficiently in their wavelength and can be superimposed as low as possible with the aid of spectrally selective dielectric mirror systems.
  • a minimum wavelength spacing for the coupling of unpolarized partial beams in the infrared range must be about 40 nm.
  • this method of wave coupling for the partial beams of a single laser diode bar grund ⁇ addition not applicable, since the emitters of a laser diode bar usually have approximately the same wavelengths.
  • a wavelength coupling with dielectric mirrors is therefore used only for the coupling of a plurality of laser diode bars or a plurality of stacks with different wavelengths.
  • the invention is based on the object of providing a diode laser with an optical device for increasing the beam density of an output laser beam emerging from it, which, with a simple structure, provides the spatial coupling of a laser beam compared to the prior art significantly increased number of partial beams allows.
  • a diode laser includes an optical device for increasing the radiance of an aus ⁇ passing out output laser beam in an application plane, which consists of a plurality of partial beams which are generated by a plurality of diode laser elements, wherein the optical device is arranged downstream of the diode laser elements.
  • the optical device contains a first volume Bragg grating, which in each case only partly reflects a spectral region of the partial beams emerging from the diode laser elements into the respective diode laser element and transmits the predominant part of only this spectral region, wherein the average wavelengths of the respective spectral components filtered from different sub-beams are different from one another.
  • the first volume Bragg grating is followed by a second grating, preferably also a volume Bragg grating, for collinear spatial superimposition of the partial beams transmitted by the first volume Bragg grating in the output laser beam.
  • the use of a first holographic or volume Bragg grating makes it possible to narrow the sub-beams which are already emerging from the diode laser elements in a relatively narrow band with respect to their spectral bandwidth. In this way, spectrally different partial beams can be generated, which differ sufficiently with respect to their mean wavelength and are stabilized narrowband to this wavelength in order to be able to be superimposed largely loss-free with the second grid.
  • a diode laser in the sense of the present invention is a superordinate structural unit, which is composed of a plurality of diode laser elements.
  • a diode laser can be either one by a group of individual emitters, which are then referred to as a diode laser element in the context of the invention, or by a group of laser diodes, for example by a group of laser diode bars, each one
  • the laser diode bars are then referred to as a diode laser element.
  • the difference between the average wavelength of spectrally adjacent transmitted sub-beams is greater than half the sum of their spectral half-widths.
  • first and / or second volume Bragg grating is constructed from a single volume Bragg grating element whose lattice properties are location-dependent, wherein preferably the respective volume Bragg grating Element has a number of regions corresponding to the number of diode laser elements, each having constant but different lattice properties.
  • the first and / or second volume Bragg gratings are constructed from a plurality of discrete volume Bragg gratings which differ in their grating characteristics, in particular the number of discrete volume Bragg gratings being equal to the number of Diode laser elements corresponds.
  • a volume Bragg grating constructed from individual volume Bragg grating elements can be manufactured in a particularly simple manner.
  • first and / or second volume Bragg grating arrangement is preceded by a respective micro-optics, which is particularly integrated in each case in the volume Bragg grating arrangement. This will contribute to losses the transmission and coupling of the partial beams to or reduced in the volume Bragg gratings.
  • the first and / or second volume Bragg grating is constructed from one or more PTR elements. These enable a particularly narrow-band stabilization of the wavelength of the respective component beams emerging from the diode laser elements, and thus a particularly effective and loss-free wavelength coupling of the partial beams stabilized in this way.
  • a diode laser including a plurality n of DIO denlaserelementen 2 (1), 2 (2) ... 2 (n>, which are in the exemplary embodiment of FIG play arranged in a row next to each other and form a diode laser assembly 4
  • the diode laser elements 2 (1) , 2 ⁇ 2) ,... 2 (n) shown in the figure can be both the individual emitter of a laser diode bar and laser diode bars which are arranged one above the other in a stack are.
  • Each diode laser element 2 (1) , 2 (2) , ... 2 (n) emits a partial beam 8 ⁇ 1) , 8 (2) ,... 8 (n> .
  • the diode laser assembly 4 is followed by a micro-optics 6, which form a collimation of the partial beams 8 U) , 8 (2. 3 ) respectively emerging from the diode array elements 2 (1) , 2 (2) , ) , ... 8 ⁇ n) in the direction of the fast axis.
  • This micro-optics 6 is a single one in the case where the diode laser assembly 4 is a single laser diode bar and the diode laser elements 2 (1) , 2 (2) , ... 2 (n) are single emitters cylindrical lens.
  • the diode laser assembly shown in the figure is composed of a plurality of laser diode bars serving as diode laser elements 2 (1) , 2 (2) , ... 2 (n)
  • an array of n-single microlenses is used as the micro-optics 6.
  • a collimation in the direction of the slow axis is additionally performed with the micro-optics 6.
  • the partial beams 8 (1) , 8 ⁇ 2) ,... 8 ⁇ ) emerging from the diode laser assembly 4 or the collimator 6 are coupled into an optical device 10, the output side being a
  • Output laser beam 12 is generated, in which all sub-beams 8 (1) , 8 ! 2> , ... 8 (n) are collinear superimposed and directly or with an only indicated in the figure beam guiding and beam shaping device, for example with a fiber optic, be performed together and superimposed to an object 16 in order to cause there with high intensity each targeted according to the intended physical effect.
  • This object can be, for example, a workpiece to be machined or the laser-active medium of a solid-state laser, which is to be pumped optically with the diode laser.
  • the optical device 10 comprises on the input side a first holographic grating or volume Bragg grating 18, which of each partial beam 8 (1) , 8 (2) ,... 8 (n) has only a narrow spectral range with a central wavelength ⁇ B (1) , ⁇ B (2) , ... ⁇ B ⁇ n> and the half width ⁇ B (1) , ⁇ B ⁇ 2) , ... ⁇ B (n) which is smaller than the half-width of the emitted respective partial beam 8 (1) , 8 ⁇ 2> , ... 8 (n) is partially reflected back into the respective diode laser element 2 (1) , 2 ⁇ 2) , ... 2 (n) and transmits the predominant part only of this spectral range.
  • the feedback caused by the reflected-back component leads to a so-called self-seeding of the respective diode laser element 2 (1) , 2 (2) ... 2 ⁇ n> and thus to a spectral narrowing of the respective output radiation, so that the diode denlaserimplantation 2 (1) , 2 (2> ... 2 (n> in the stationary state only partial beams 8 (1) , 8 (2) , ... 8 (n> emit their Mitten ⁇ wavelengths on the wavelengths ⁇ B (1) , ⁇ B ⁇ 2) , ... ⁇ B (n> stabilized and Siert in their Halbwertsbreite ⁇ B (1) , ⁇ B (2) , ...
  • a suitable volume Bragg grating is, for example, a photo-thermal h-refractive component, as for example from the
  • FIG. 1 shows an exemplary embodiment in which the lattice constant of the first volume Bragg grating continuously varies as a function of the spatial coordinate, as illustrated by the arrow 20 in the figure.
  • a continuous variation of the lattice constant is also a discontinuous variation of the lattice constant within the first volume Bragg grating, so that each diode laser element 2 (1) , 2 (2> ... 2 ⁇ n>) is assigned a region with a constant lattice property in each case.
  • the partial beams emerging from the first volume Bragg grating 18 meet after collimation in the slow axis with a micro-optics 22 on a second grating 24 arranged within the optical device 10, which is preferably likewise a volume Bragg grating and in which an incoherent collinear superposition of the narrow-band spectral narrow beams 8 (1) , 8 ⁇ 2) ,... 8 (n) is performed.
  • the second grid is preferably a PTR element and analogous to the first volume Bragg grating 18 has a location-dependent inner grating structure.
  • the lattice structure to be designed in such a manner at the position i has that the partial beam with the Wellenlän ⁇ ge ⁇ B (l> maximum reflection, while the already überla ⁇ siege partial beams having the wavelengths ⁇ B (l + 1), ⁇ B ⁇ 1 +2) , ... ⁇ B (1 + n>) must be transmitted with as little loss as possible.
  • the first volume Bragg grating 18 is constructed from a plurality of discrete volume Bragg grating elements 18 U) , 18 (2) ,... 18 (n) , which in the exemplary embodiment according to FIG the number n of the diode laser elements 2 (1) , 2 (2) , ... 2 ⁇ n> .
  • the second grating 24 can also be constructed from a plurality of discrete volume Bragg grating elements. Furthermore, it is possible to integrate micro-optics 6, first volume Bragg grating 18 and second grating 24 into a monolithic component, so that the micro-optics 22 shown in FIGS. 1 and 2 are no longer required due to their compact construction.
  • the arrangements according to the invention enable a very compact and stable construction, since the first volume Bragg grating 18 can be mounted directly with the collimator 6 or, as explained above, can be produced together with the collimator 6 as a monolithic component.
  • the distance d from the output facets of the diode laser element 2 (1> , 2 (2) ... 2 ⁇ n) to the first volume Bragg grating 18 is only a few millimeters and is typically less than 3 mm, so that the sensitivity is largely reduced compared to mechanical loads.
  • a further positive effect is the reduction of the temperature dependence of the wavelength of the emitted laser radiation by the first volume Bragg grating 18, since this stabilizes the wavelength to a narrowband range.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à diodes comportant un système optique (10) destiné à augmenter la radiance d'un faisceau laser de sortie (12) émis par le laser au niveau d'un objet (16), ledit faisceau étant composé d'une pluralité de faisceaux partiels (8(1), 8(2), ... 8(n)) produits par une pluralité d'éléments de laser à diodes (2(1), 2(2), ... 2(n)). Le système optique (10) est disposé en aval des éléments de laser à diodes (2(1), 2(2), ... 2(n)) et contient un premier réseau de Bragg volumique (18) ne réfléchissant partiellement qu'une zone spectrale (?B(1), ??B(l), , ?B(2), ??B(2), ?B(n), ??B(n)) des faisceaux partiels (8(1), 8(2), ... 8(n)) sortant des éléments de laser à diodes (2(1), 2(2), ... 2(n)), dans l'élément de laser à diodes (2(1), 2(2), ... 2(n)) correspondant, et ne transmettant que la partie principale de cette zone spectrale (?B(1), ??B(l), ?B(2), ??B(2), ?B(n), ??B(n)), les longueurs d'ondes moyennes (?B(1), ?B(2), ... ?B(n)) des zones spectrales (?B(1), ??B(l), ?B(2), ??B(2), ?B(n), ??B(n)) respectivement filtrées à partir de divers faisceaux partiels (8(1), 8(2), ... 8(n)) étant différentes les unes des autres. Un deuxième réseau (24) sert à superposer de façon colinéaire les faisceaux partiels transmis par le premier réseau de Bragg volumique (18) dans le faisceau laser de sortie.
PCT/EP2005/008393 2004-08-21 2005-08-03 Laser a diodes comportant un systeme optique destine a augmenter la radiance d'un faisceau laser de sortie emis par le laser WO2006021298A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007526332A JP2008511131A (ja) 2004-08-21 2005-08-03 ダイオードレーザ
EP05775011A EP1779482A1 (fr) 2004-08-21 2005-08-03 Laser a diodes comportant un systeme optique destine a augmenter la radiance d'un faisceau laser de sortie emis par le laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004040608.1 2004-08-21
DE200410040608 DE102004040608B4 (de) 2004-08-21 2004-08-21 Diodenlaser mit einer optischen Einrichtung zur Erhöhung der Strahldichte eines aus ihm austretenden Ausgangslaserstrahls

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WO2006021298A1 true WO2006021298A1 (fr) 2006-03-02

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EP (1) EP1779482A1 (fr)
JP (1) JP2008511131A (fr)
DE (1) DE102004040608B4 (fr)
WO (1) WO2006021298A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014190975A1 (fr) 2013-05-28 2014-12-04 Lumics Gmbh Laser à diode
US11658466B2 (en) 2017-06-13 2023-05-23 Nuburu, Inc. Very dense wavelength beam combined laser system

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881355B2 (en) * 2005-12-15 2011-02-01 Mind Melters, Inc. System and method for generating intense laser light from laser diode arrays
EP2287643B1 (fr) 2009-08-19 2020-05-06 Lawrence Livermore National Security, LLC Homogénéisateur de faisceau laser diffractif incluant un matériau photo-actif et son procédé de fabrication
US8547632B2 (en) * 2009-08-19 2013-10-01 Lawrence Livermore National Security, Llc Method and system for homogenizing diode laser pump arrays

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5691989A (en) * 1991-07-26 1997-11-25 Accuwave Corporation Wavelength stabilized laser sources using feedback from volume holograms
EP1143584A2 (fr) * 2000-03-31 2001-10-10 Matsushita Electric Industrial Co., Ltd. Réseau laser à semiconducteur
WO2003036766A2 (fr) * 2001-10-23 2003-05-01 Torsana Laser Technologies A/S Appareil laser

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
DE19645150C2 (de) * 1996-10-28 2002-10-24 Fraunhofer Ges Forschung Optische Anordnung zur Symmetrierung der Strahlung von Laserdioden
EP1166165B1 (fr) * 1999-03-31 2002-09-11 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Dispositif optique pour rendre symetriques les rayonnements de reseaux bidimensionnels de diodes laser
US7298771B2 (en) * 2003-07-03 2007-11-20 Pd-Ld, Inc. Use of volume Bragg gratings for the conditioning of laser emission characteristics

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691989A (en) * 1991-07-26 1997-11-25 Accuwave Corporation Wavelength stabilized laser sources using feedback from volume holograms
EP1143584A2 (fr) * 2000-03-31 2001-10-10 Matsushita Electric Industrial Co., Ltd. Réseau laser à semiconducteur
WO2003036766A2 (fr) * 2001-10-23 2003-05-01 Torsana Laser Technologies A/S Appareil laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014190975A1 (fr) 2013-05-28 2014-12-04 Lumics Gmbh Laser à diode
DE102013105467A1 (de) 2013-05-28 2014-12-04 Lumics Gmbh Diodenlaser
US11658466B2 (en) 2017-06-13 2023-05-23 Nuburu, Inc. Very dense wavelength beam combined laser system

Also Published As

Publication number Publication date
EP1779482A1 (fr) 2007-05-02
DE102004040608B4 (de) 2006-09-07
JP2008511131A (ja) 2008-04-10
DE102004040608A1 (de) 2006-03-09

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