WO2006002609A1 - Laser a semi-conducteurs a emission par la surface et son procede de production - Google Patents

Laser a semi-conducteurs a emission par la surface et son procede de production Download PDF

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Publication number
WO2006002609A1
WO2006002609A1 PCT/DE2005/001066 DE2005001066W WO2006002609A1 WO 2006002609 A1 WO2006002609 A1 WO 2006002609A1 DE 2005001066 W DE2005001066 W DE 2005001066W WO 2006002609 A1 WO2006002609 A1 WO 2006002609A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor
semiconductor laser
recess
layer sequence
Prior art date
Application number
PCT/DE2005/001066
Other languages
German (de)
English (en)
Inventor
Wolfgang Reill
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2006002609A1 publication Critical patent/WO2006002609A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Abstract

L'invention concerne un laser à semi-conducteurs à émission par la surface, comprenant d'une part une puce à semi-conducteurs (1), qui présente un substrat (2) et une succession de couches de semi-conducteurs (19) obtenues par épitaxie sur le substrat (2) et comportant une zone active (12) émettant un rayonnement, et d'autre part un miroir de résonateur (5) externe. Selon l'invention, le substrat présente un évidement (3) à travers lequel sort le rayonnement émis (6).
PCT/DE2005/001066 2004-06-30 2005-06-15 Laser a semi-conducteurs a emission par la surface et son procede de production WO2006002609A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200410031711 DE102004031711B4 (de) 2004-06-30 2004-06-30 Oberflächenemittierender Halbleiterlaser und Verfahren zu dessen Herstellung
DE102004031711.9 2004-06-30

Publications (1)

Publication Number Publication Date
WO2006002609A1 true WO2006002609A1 (fr) 2006-01-12

Family

ID=34972000

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/001066 WO2006002609A1 (fr) 2004-06-30 2005-06-15 Laser a semi-conducteurs a emission par la surface et son procede de production

Country Status (2)

Country Link
DE (1) DE102004031711B4 (fr)
WO (1) WO2006002609A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010012307A1 (en) * 2000-02-09 2001-08-09 Toshiro Hayakawa Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated
US6285702B1 (en) * 1999-03-05 2001-09-04 Coherent, Inc. High-power external-cavity optically-pumped semiconductor laser
DE10144826A1 (de) * 2001-09-12 2003-03-27 Forschungsverbund Berlin Ev Verfahren zur Behandlung von oberflächenemittierenden Halbleiter-Bauelementen und oberflächenemittierendes Halbleiter-Bauelement
WO2004036707A2 (fr) * 2002-09-03 2004-04-29 Finisar Corporation Laser a cavite verticale et a emission par la surface a mode unique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735234B1 (en) * 2000-02-11 2004-05-11 Giga Tera Ag Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser
US20020176473A1 (en) * 2001-05-23 2002-11-28 Aram Mooradian Wavelength selectable, controlled chirp, semiconductor laser
DE102004024611A1 (de) * 2003-05-23 2005-03-03 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleitervorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285702B1 (en) * 1999-03-05 2001-09-04 Coherent, Inc. High-power external-cavity optically-pumped semiconductor laser
US20010012307A1 (en) * 2000-02-09 2001-08-09 Toshiro Hayakawa Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated
DE10144826A1 (de) * 2001-09-12 2003-03-27 Forschungsverbund Berlin Ev Verfahren zur Behandlung von oberflächenemittierenden Halbleiter-Bauelementen und oberflächenemittierendes Halbleiter-Bauelement
WO2004036707A2 (fr) * 2002-09-03 2004-04-29 Finisar Corporation Laser a cavite verticale et a emission par la surface a mode unique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MCINERNEY J G ET AL: "High-power surface emitting semiconductor laser with extended vertical compound cavity", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 39, no. 6, 20 March 2003 (2003-03-20), pages 523 - 525, XP006020057, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
DE102004031711B4 (de) 2008-09-18
DE102004031711A1 (de) 2006-01-19

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