WO2005114282A3 - Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques - Google Patents

Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques Download PDF

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Publication number
WO2005114282A3
WO2005114282A3 PCT/US2005/017029 US2005017029W WO2005114282A3 WO 2005114282 A3 WO2005114282 A3 WO 2005114282A3 US 2005017029 W US2005017029 W US 2005017029W WO 2005114282 A3 WO2005114282 A3 WO 2005114282A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical
devices
nanoribbons
nanowires
components
Prior art date
Application number
PCT/US2005/017029
Other languages
English (en)
Other versions
WO2005114282A2 (fr
Inventor
Peidong Yang
Mat Law
Donald J Sirbuly
Justin C Johnson
Richard Saykally
Original Assignee
Univ California
Peidong Yang
Mat Law
Donald J Sirbuly
Justin C Johnson
Richard Saykally
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California, Peidong Yang, Mat Law, Donald J Sirbuly, Justin C Johnson, Richard Saykally filed Critical Univ California
Priority to CA002565765A priority Critical patent/CA2565765A1/fr
Priority to JP2007513453A priority patent/JP2007538274A/ja
Priority to EP05761557A priority patent/EP1747488A2/fr
Publication of WO2005114282A2 publication Critical patent/WO2005114282A2/fr
Publication of WO2005114282A3 publication Critical patent/WO2005114282A3/fr
Priority to US11/559,244 priority patent/US8280214B2/en
Priority to US12/402,257 priority patent/US20090263912A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne des nanorubans et des nanofils de diamètres inférieurs à la longueur d'onde de la lumière, qui sont utilisés dans la formation et le fonctionnement de circuits et de dispositifs optiques. Ces nanostructures fonctionnent en tant que guides d'ondes optiques de sous-longueur d'onde qui forment un bloc de construction fondamental pour l'intégration optique. La longueur, la souplesse et la résistance extraordinaires desdites structures permettent d'assurer la manipulation de ces dernières sur des surfaces, notamment le positionnement précis et la liaison optique des guides d'ondes de type nanorubans/nanofils et d'autres éléments de type nanorubans/nanofils afin que soient formés des réseaux et des dispositifs optiques. En outre, lesdites structures assurent le guidage d'ondes dans des liquides, ce qui leur permet d'être également utilisées dans d'autres applications de type sondes et capteurs optiques.
PCT/US2005/017029 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques WO2005114282A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA002565765A CA2565765A1 (fr) 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques
JP2007513453A JP2007538274A (ja) 2004-05-13 2005-05-13 サブ波長光導波路としてのナノワイヤ及びナノリボン並びに、これらナノ構造の光学回路及び光学素子の構成要素への利用
EP05761557A EP1747488A2 (fr) 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques
US11/559,244 US8280214B2 (en) 2004-05-13 2006-11-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
US12/402,257 US20090263912A1 (en) 2004-05-13 2009-03-11 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US57141604P 2004-05-13 2004-05-13
US60/571,416 2004-05-13
US64361205P 2005-01-12 2005-01-12
US60/643,612 2005-01-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/559,244 Continuation-In-Part US8280214B2 (en) 2004-05-13 2006-11-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
US11/559,244 Continuation US8280214B2 (en) 2004-05-13 2006-11-13 Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices

Publications (2)

Publication Number Publication Date
WO2005114282A2 WO2005114282A2 (fr) 2005-12-01
WO2005114282A3 true WO2005114282A3 (fr) 2006-06-08

Family

ID=35429014

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/017029 WO2005114282A2 (fr) 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques

Country Status (4)

Country Link
EP (1) EP1747488A2 (fr)
JP (1) JP2007538274A (fr)
CA (1) CA2565765A1 (fr)
WO (1) WO2005114282A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390951B2 (en) 2009-05-26 2016-07-12 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI294636B (en) 2000-08-22 2008-03-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabricating such devices
AU2002229046B2 (en) 2000-12-11 2006-05-18 President And Fellows Of Harvard College Nanosensors
US8280214B2 (en) * 2004-05-13 2012-10-02 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
WO2006015105A2 (fr) * 2004-07-28 2006-02-09 President And Fellows Of Harvard College Circuits photoniques a nanofils, composants et procedes associes
EP1831973A2 (fr) 2004-12-06 2007-09-12 The President and Fellows of Harvard College Unite de stockage de donnees a base de fils a l'echelle nanometrique
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (fr) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Heterostructures nanofils
JP5484731B2 (ja) * 2005-10-12 2014-05-07 アデレード リサーチ アンド イノヴェーション ピーティーワイ エルティーディー ナノワイヤの製造
JP2009540333A (ja) 2006-06-12 2009-11-19 プレジデント アンド フェロウズ オブ ハーバード カレッジ ナノセンサーおよび関連技術
WO2008033303A2 (fr) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Fils ramifiés à l'échelle nano
WO2008127314A1 (fr) 2006-11-22 2008-10-23 President And Fellows Of Harvard College Capteurs à nanofil à haute sensibilité
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
CN102073102B (zh) * 2010-12-08 2012-08-08 中国科学院半导体研究所 槽波导微环谐振型单纤三向器
CN102412503A (zh) * 2011-09-20 2012-04-11 浙江大学 利用两根半导体纳米线耦合的单纵模激光器及制备方法
CN103227419A (zh) * 2013-04-01 2013-07-31 天津理工大学 基于ZnO纳米管/SiO2量子点泵浦随机激光发射器
JP6947386B2 (ja) * 2017-06-29 2021-10-13 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
CN114142341B (zh) * 2021-11-30 2023-08-25 中北大学 一种基于自由纳米线-硅波导结构的片上超连续谱光源

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9390951B2 (en) 2009-05-26 2016-07-12 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices

Also Published As

Publication number Publication date
JP2007538274A (ja) 2007-12-27
CA2565765A1 (fr) 2005-12-01
EP1747488A2 (fr) 2007-01-31
WO2005114282A2 (fr) 2005-12-01

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