CA2565765A1 - Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques - Google Patents

Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques Download PDF

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Publication number
CA2565765A1
CA2565765A1 CA002565765A CA2565765A CA2565765A1 CA 2565765 A1 CA2565765 A1 CA 2565765A1 CA 002565765 A CA002565765 A CA 002565765A CA 2565765 A CA2565765 A CA 2565765A CA 2565765 A1 CA2565765 A1 CA 2565765A1
Authority
CA
Canada
Prior art keywords
optical
nanoribbon
waveguide
nanowire
recited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002565765A
Other languages
English (en)
Inventor
Peidong Yang
Matt Law
Donald J. Sirbuly
Justin C. Johnson
Richard Saykally
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
The Regents Of The University Of California
Peidong Yang
Matt Law
Donald J. Sirbuly
Justin C. Johnson
Richard Saykally
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Regents Of The University Of California, Peidong Yang, Matt Law, Donald J. Sirbuly, Justin C. Johnson, Richard Saykally filed Critical The Regents Of The University Of California
Publication of CA2565765A1 publication Critical patent/CA2565765A1/fr
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
CA002565765A 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques Abandoned CA2565765A1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US57141604P 2004-05-13 2004-05-13
US60/571,416 2004-05-13
US64361205P 2005-01-12 2005-01-12
US60/643,612 2005-01-12
PCT/US2005/017029 WO2005114282A2 (fr) 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques

Publications (1)

Publication Number Publication Date
CA2565765A1 true CA2565765A1 (fr) 2005-12-01

Family

ID=35429014

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002565765A Abandoned CA2565765A1 (fr) 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques

Country Status (4)

Country Link
EP (1) EP1747488A2 (fr)
JP (1) JP2007538274A (fr)
CA (1) CA2565765A1 (fr)
WO (1) WO2005114282A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2360298A3 (fr) 2000-08-22 2011-10-05 President and Fellows of Harvard College Proédé pour le dépot d'un nano-fil semiconducteur
KR100991573B1 (ko) 2000-12-11 2010-11-04 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US8280214B2 (en) 2004-05-13 2012-10-02 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
WO2006015105A2 (fr) * 2004-07-28 2006-02-09 President And Fellows Of Harvard College Circuits photoniques a nanofils, composants et procedes associes
EP1831973A2 (fr) 2004-12-06 2007-09-12 The President and Fellows of Harvard College Unite de stockage de donnees a base de fils a l'echelle nanometrique
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (fr) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Heterostructures nanofils
CA2625647A1 (fr) * 2005-10-12 2007-04-19 Adelaide Research And Innovation Pty Ltd Fabrication de nanofils
WO2008051316A2 (fr) 2006-06-12 2008-05-02 President And Fellows Of Harvard College Nano-capteurs et technologies associées
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (fr) 2006-11-22 2008-10-23 President And Fellows Of Harvard College Capteurs à nanofil à haute sensibilité
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
CN102073102B (zh) * 2010-12-08 2012-08-08 中国科学院半导体研究所 槽波导微环谐振型单纤三向器
CN102412503A (zh) * 2011-09-20 2012-04-11 浙江大学 利用两根半导体纳米线耦合的单纵模激光器及制备方法
CN103227419A (zh) * 2013-04-01 2013-07-31 天津理工大学 基于ZnO纳米管/SiO2量子点泵浦随机激光发射器
JP6947386B2 (ja) * 2017-06-29 2021-10-13 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
CN114142341B (zh) * 2021-11-30 2023-08-25 中北大学 一种基于自由纳米线-硅波导结构的片上超连续谱光源

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW554388B (en) * 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Also Published As

Publication number Publication date
WO2005114282A2 (fr) 2005-12-01
JP2007538274A (ja) 2007-12-27
WO2005114282A3 (fr) 2006-06-08
EP1747488A2 (fr) 2007-01-31

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FZDE Discontinued