JP2007538274A - サブ波長光導波路としてのナノワイヤ及びナノリボン並びに、これらナノ構造の光学回路及び光学素子の構成要素への利用 - Google Patents

サブ波長光導波路としてのナノワイヤ及びナノリボン並びに、これらナノ構造の光学回路及び光学素子の構成要素への利用 Download PDF

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Publication number
JP2007538274A
JP2007538274A JP2007513453A JP2007513453A JP2007538274A JP 2007538274 A JP2007538274 A JP 2007538274A JP 2007513453 A JP2007513453 A JP 2007513453A JP 2007513453 A JP2007513453 A JP 2007513453A JP 2007538274 A JP2007538274 A JP 2007538274A
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Japan
Prior art keywords
nanoribbon
optical
nanowire
light
optical waveguide
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Pending
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JP2007513453A
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English (en)
Japanese (ja)
Inventor
ヤン，ペイドン
ロウ，マット
サーバリー，ドナルド，ジェイ
ジョンソン，ジャスティン，シー
セイカリー，リチャード
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University of California
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University of California
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Publication of JP2007538274A publication Critical patent/JP2007538274A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
JP2007513453A 2004-05-13 2005-05-13 サブ波長光導波路としてのナノワイヤ及びナノリボン並びに、これらナノ構造の光学回路及び光学素子の構成要素への利用 Pending JP2007538274A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US57141604P 2004-05-13 2004-05-13
US64361205P 2005-01-12 2005-01-12
PCT/US2005/017029 WO2005114282A2 (fr) 2004-05-13 2005-05-13 Nanofils et nanorubans faisant office de guides d'ondes optiques de sous-longueur d'onde et leur utilisation en tant que composants dans des circuits et des dispositifs photoniques

Publications (1)

Publication Number Publication Date
JP2007538274A true JP2007538274A (ja) 2007-12-27

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Family Applications (1)

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JP2007513453A Pending JP2007538274A (ja) 2004-05-13 2005-05-13 サブ波長光導波路としてのナノワイヤ及びナノリボン並びに、これらナノ構造の光学回路及び光学素子の構成要素への利用

Country Status (4)

Country Link
EP (1) EP1747488A2 (fr)
JP (1) JP2007538274A (fr)
CA (1) CA2565765A1 (fr)
WO (1) WO2005114282A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102073102A (zh) * 2010-12-08 2011-05-25 中国科学院半导体研究所 槽波导微环谐振型单纤三向器
JP2019012744A (ja) * 2017-06-29 2019-01-24 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI294636B (en) 2000-08-22 2008-03-11 Harvard College Doped elongated semiconductor articles, growing such articles, devices including such articles and fabricating such devices
AU2002229046B2 (en) 2000-12-11 2006-05-18 President And Fellows Of Harvard College Nanosensors
US8280214B2 (en) * 2004-05-13 2012-10-02 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
WO2006015105A2 (fr) * 2004-07-28 2006-02-09 President And Fellows Of Harvard College Circuits photoniques a nanofils, composants et procedes associes
EP1831973A2 (fr) 2004-12-06 2007-09-12 The President and Fellows of Harvard College Unite de stockage de donnees a base de fils a l'echelle nanometrique
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (fr) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Heterostructures nanofils
JP5484731B2 (ja) * 2005-10-12 2014-05-07 アデレード リサーチ アンド イノヴェーション ピーティーワイ エルティーディー ナノワイヤの製造
JP2009540333A (ja) 2006-06-12 2009-11-19 プレジデント アンド フェロウズ オブ ハーバード カレッジ ナノセンサーおよび関連技術
WO2008033303A2 (fr) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Fils ramifiés à l'échelle nano
WO2008127314A1 (fr) 2006-11-22 2008-10-23 President And Fellows Of Harvard College Capteurs à nanofil à haute sensibilité
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
CN102412503A (zh) * 2011-09-20 2012-04-11 浙江大学 利用两根半导体纳米线耦合的单纵模激光器及制备方法
CN103227419A (zh) * 2013-04-01 2013-07-31 天津理工大学 基于ZnO纳米管/SiO2量子点泵浦随机激光发射器
CN114142341B (zh) * 2021-11-30 2023-08-25 中北大学 一种基于自由纳米线-硅波导结构的片上超连续谱光源

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MXPA03008935A (es) * 2001-03-30 2004-06-30 Univ California Metodos de fabricacion de nanoestructuras y nanocables y dispositivos fabricados a partir de ellos.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102073102A (zh) * 2010-12-08 2011-05-25 中国科学院半导体研究所 槽波导微环谐振型单纤三向器
JP2019012744A (ja) * 2017-06-29 2019-01-24 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法

Also Published As

Publication number Publication date
CA2565765A1 (fr) 2005-12-01
EP1747488A2 (fr) 2007-01-31
WO2005114282A3 (fr) 2006-06-08
WO2005114282A2 (fr) 2005-12-01

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