WO2005101490A3 - An einer kühlrippe angeordnetes bauelement - Google Patents

An einer kühlrippe angeordnetes bauelement Download PDF

Info

Publication number
WO2005101490A3
WO2005101490A3 PCT/EP2005/051652 EP2005051652W WO2005101490A3 WO 2005101490 A3 WO2005101490 A3 WO 2005101490A3 EP 2005051652 W EP2005051652 W EP 2005051652W WO 2005101490 A3 WO2005101490 A3 WO 2005101490A3
Authority
WO
WIPO (PCT)
Prior art keywords
component
layer
cooling fin
situated
contact surface
Prior art date
Application number
PCT/EP2005/051652
Other languages
English (en)
French (fr)
Other versions
WO2005101490A2 (de
Inventor
Markus Fruehauf
Kurt Goepfrich
Original Assignee
Siemens Ag
Markus Fruehauf
Kurt Goepfrich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Markus Fruehauf, Kurt Goepfrich filed Critical Siemens Ag
Publication of WO2005101490A2 publication Critical patent/WO2005101490A2/de
Publication of WO2005101490A3 publication Critical patent/WO2005101490A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/24011—Deposited, e.g. MCM-D type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/2402—Laminated, e.g. MCM-L type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Eine Vorrichtung weist eine Kühlrippe (12) auf, an der eine Isolationsschicht (10) angeordnet ist, auf der ein Bauelement (2) angeordnet ist. Das Bauelement weist eine elektrische Kontaktfläche auf. Eine Schicht (3) aus elektrisch isolierendem Material ist auf der Kühlrippe mit der Isolationsschicht und dem Bauelement aufgebracht. Die elektrische Kontaktfläche des Bauelements ist von der Schicht aus elektrisch isolierendem Material freigelegt. Eine Schicht (4, 6) aus elektrisch leitendem Material ist auf der Schicht aus elektrisch isolierendem Material und der freigelegten elektrischen Kontaktfläche des Bauelements aufgebracht.
PCT/EP2005/051652 2004-04-19 2005-04-14 An einer kühlrippe angeordnetes bauelement WO2005101490A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004019435.1 2004-04-19
DE200410019435 DE102004019435A1 (de) 2004-04-19 2004-04-19 An einer Kühlrippe angeordnetes Bauelement

Publications (2)

Publication Number Publication Date
WO2005101490A2 WO2005101490A2 (de) 2005-10-27
WO2005101490A3 true WO2005101490A3 (de) 2006-04-13

Family

ID=34981674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/051652 WO2005101490A2 (de) 2004-04-19 2005-04-14 An einer kühlrippe angeordnetes bauelement

Country Status (2)

Country Link
DE (1) DE102004019435A1 (de)
WO (1) WO2005101490A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053396B4 (de) * 2005-11-09 2010-04-15 Semikron Elektronik Gmbh & Co. Kg Schaltungseinrichtung, insbesondere Frequenzumrichter
US8823175B2 (en) 2012-05-15 2014-09-02 Infineon Technologies Ag Reliable area joints for power semiconductors

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188547A (ja) * 1984-10-05 1986-05-06 Fujitsu Ltd 半導体装置
EP0562725A2 (de) * 1992-03-04 1993-09-29 International Business Machines Corporation Anpassungsvorrichtung zum Modifizieren elektrischer Verbindungen eines elektrischen Bauelementes
US5545924A (en) * 1993-08-05 1996-08-13 Honeywell Inc. Three dimensional package for monolithic microwave/millimeterwave integrated circuits
US5751553A (en) * 1992-09-16 1998-05-12 Clayton; James E. Thin multichip module including a connector frame socket having first and second apertures
US5963427A (en) * 1997-12-11 1999-10-05 Sun Microsystems, Inc. Multi-chip module with flexible circuit board
US6002589A (en) * 1997-07-21 1999-12-14 Rambus Inc. Integrated circuit package for coupling to a printed circuit board
US6326686B1 (en) * 1997-09-09 2001-12-04 Samsung Electronics Co., Ltd. Vertical semiconductor device package having printed circuit board and heat spreader, and module having the packages
FR2818801A1 (fr) * 2000-12-21 2002-06-28 Gemplus Card Int Interconnexion par organe d'isolation decoupe et cordon de conduction
US6449159B1 (en) * 2000-05-03 2002-09-10 Rambus Inc. Semiconductor module with imbedded heat spreader
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6188547A (ja) * 1984-10-05 1986-05-06 Fujitsu Ltd 半導体装置
EP0562725A2 (de) * 1992-03-04 1993-09-29 International Business Machines Corporation Anpassungsvorrichtung zum Modifizieren elektrischer Verbindungen eines elektrischen Bauelementes
US5751553A (en) * 1992-09-16 1998-05-12 Clayton; James E. Thin multichip module including a connector frame socket having first and second apertures
US5545924A (en) * 1993-08-05 1996-08-13 Honeywell Inc. Three dimensional package for monolithic microwave/millimeterwave integrated circuits
US6002589A (en) * 1997-07-21 1999-12-14 Rambus Inc. Integrated circuit package for coupling to a printed circuit board
US6326686B1 (en) * 1997-09-09 2001-12-04 Samsung Electronics Co., Ltd. Vertical semiconductor device package having printed circuit board and heat spreader, and module having the packages
US5963427A (en) * 1997-12-11 1999-10-05 Sun Microsystems, Inc. Multi-chip module with flexible circuit board
US6449159B1 (en) * 2000-05-03 2002-09-10 Rambus Inc. Semiconductor module with imbedded heat spreader
FR2818801A1 (fr) * 2000-12-21 2002-06-28 Gemplus Card Int Interconnexion par organe d'isolation decoupe et cordon de conduction
WO2003030247A2 (de) * 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 263 (E - 435) 9 September 1986 (1986-09-09) *

Also Published As

Publication number Publication date
DE102004019435A1 (de) 2005-11-03
WO2005101490A2 (de) 2005-10-27

Similar Documents

Publication Publication Date Title
EP1324388A3 (de) Kühlmethode elektronischer Komponenten und thermisch leitende Folie dafür
DK1956647T3 (da) Strömkredsarrangement med forbindelsesindretning og fremgangsmåde til fremstilling deraf
EP1261028A3 (de) Kühlanordnung für Elektronikapparat
EP3270504A3 (de) Regelvorrichtung für einen elektrischen verdichter
EP1612873A4 (de) Kollektorplatte und elektrochemische vorrichtung
WO2003023857A3 (de) Led-leuchtpaneel und trägerplatte
TW200733022A (en) Emissive device and electronic apparatus
WO2007096096A3 (en) Biomedical surface electrode
WO2008021982A3 (en) Surface mountable chip
EP1458023A3 (de) Elektronische Schaltung mit elektrisch isolierender, wärmeleitender Struktur und Herstellungsverfahren hierfür
WO2007001391A3 (en) Metalized elastomeric electrical contacts
TWI267173B (en) Circuit device and method for manufacturing thereof
TW200618014A (en) Liquid metal switch employing electrowetting for actuation and architectures for implementing same
JP2008519453A5 (de)
WO2009075079A1 (ja) 回路板、回路板の製造方法およびカバーレイフィルム
TW200608563A (en) Circuit device
WO2007020538A3 (en) Integrated device having a semiconductor device and a temperature sensing element and corresponding manufacturing method
WO2005101490A3 (de) An einer kühlrippe angeordnetes bauelement
TW200618726A (en) Power module and electric transportation apparatus incorporating the same
WO2004077547A3 (de) Verbindungstechnik für leistungshalbleiter mit grossflächigen anschlüssen
WO2003026352A3 (de) Elektrische heizeinrichtung mit beschichtetem heizleiter
WO2005101480A3 (de) Mit planarer verbindungstechnik auf einem insbesondere elektrisch leitendem substrat aufgebaute schaltung
JP2006501682A5 (de)
WO2006122691A3 (fr) Dispositif laser forme par un empilement de diodes laser
WO2008021272A3 (en) Semiconductor device and method for manufacturing a semiconductor device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase