WO2005100964A1 - Dispositif detecteur et procede de mesure du point de rosee, sur la base d'elements peltier miniaturises - Google Patents

Dispositif detecteur et procede de mesure du point de rosee, sur la base d'elements peltier miniaturises Download PDF

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Publication number
WO2005100964A1
WO2005100964A1 PCT/EP2005/004172 EP2005004172W WO2005100964A1 WO 2005100964 A1 WO2005100964 A1 WO 2005100964A1 EP 2005004172 W EP2005004172 W EP 2005004172W WO 2005100964 A1 WO2005100964 A1 WO 2005100964A1
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WIPO (PCT)
Prior art keywords
dew point
cold side
peltier element
sensor element
temperature
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PCT/EP2005/004172
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German (de)
English (en)
Inventor
Ralf Stich
Jürgen WÖLLENSTEIN
Harald BÖTTNER
Marie-Luise Bauersfeld
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Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
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Publication of WO2005100964A1 publication Critical patent/WO2005100964A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/56—Investigating or analyzing materials by the use of thermal means by investigating moisture content
    • G01N25/66—Investigating or analyzing materials by the use of thermal means by investigating moisture content by investigating dew-point
    • G01N25/68—Investigating or analyzing materials by the use of thermal means by investigating moisture content by investigating dew-point by varying the temperature of a condensing surface

Definitions

  • the present invention relates to a sensor arrangement and to a method for dew point measurement based on miniaturized Peltier elements.
  • dew point sensors and detection methods can be broken down according to their principle into optical sensors or methods (scattered light measurement or reflection measurement), acoustic sensors or methods and capacitive sensors or methods.
  • optical sensors such as dew point mirrors
  • the formation of condensate is recorded optically, wherein either the directly reflected light is measured and an attenuation in intensity is registered in the case of condensation, or the scattered light generated by the condensation is measured.
  • Disadvantages of the optical measuring methods are the high costs and the high sensitivity of the arrangement to impurities: microscopic impurities such as salts can, for example, lead to a change in the water vapor pressure and thus to measurement errors.
  • acoustic dew point sensors and detection methods are based on a similar principle as the dew point mirrors, only that with these sensors or methods the detection of condensation on the cooled surface by surface acoustic wave
  • Such sensors essentially consist of a chip, mostly provided with a comb-shaped toothed electrode structure (so-called interdigital capacitor, in short: IDK) for capacitance measurement, a temperature sensor and a Peltier element for cooling the chip. If water is deposited on the sensor surface, this causes an abrupt change in the sensor capacitance due to its large dielectric constant ⁇ " ⁇ 0 « 81, since the dielectric constant of water is significantly larger than the dielectric constant of air ⁇ »1. To cool the sensor surface to be condensed, Peltier elements are mainly used in the sensor arrangements according to the prior art.
  • the sensor-active components such as the sensor chip or the mirror
  • the Peltier elements for example by gluing.
  • the application of such a sensor-active component results in a large thermal mass of the arrangement, which leads to high time constants in the formation of condensate.
  • the moisture evaporates from the sensor surface as a rule by switching off or heating up the Peltier element. Therefore, the dew point measuring devices or arrangements according to the prior art also have a high time constant for the volatilization of the surface moisture. Overall, the dew point measuring devices according to the prior art thus have a high time constant and a low measuring frequency.
  • dew point meters Another problem with the prior art dew point meters is ice formation. Particularly at high humidity values, the condensed moisture freezes when cooling too quickly and a thin layer of ice forms (see, for example, also the patent specification DE 102 16 895 AI). Due to the low dielectric constant ⁇ ' 5 «3, this layer of ice can only be distinguished with difficulty from the surrounding air, or complex corrections are necessary when using dew point mirrors.
  • Capacitive stray field sensors or dew point measuring arrangements used today also have the disadvantage that only a relatively small capacity will measure. This increases the metrological effort and the susceptibility of the equipment to measurement errors.
  • the object of the sensor arrangement according to the invention and of the measurement method according to the invention is also to increase the measurement sensitivity.
  • dew point sensor element according to claim 1 and a method for determining the dew point according to claim 21.
  • an electrode structure, a temperature sensor and an actively heatable heating element are applied or arranged directly on or immediately adjacent to a Peltier element.
  • the application or arrangement takes place on the cold side of the Peltier element.
  • Miniaturized Peltie elements which are advantageously manufactured using thin-film technology, are particularly suitable. Such are known from DE 198 45 104 AI.
  • the sensor arrangement according to the invention has the advantage that due to its low thermal mass and the resulting short response time (mil lisecond range) the time constant for the formation of condensate can be significantly reduced.
  • the actively heatable heating element directly to the cold side of the Peltier element, the moisture on the surface can also evaporate very quickly and a new measuring cycle can be started very quickly by cooling again. Due to the reduced response time and the shorter evaporation periods, the maximum measuring frequency is significantly increased. This has great advantages, particularly when used in control and regulation processes.
  • the direct application of the sensorically active structures achieves a more compact design of the sensor element, since an additional chip for the electrode structure is no longer necessary.
  • the capacitance to be measured is considerably increased by generating and using an electric field that is as homogeneous as possible for measuring the dielectric constant. This is done by suitable structuring of the electrodes: In order to achieve the highest possible homogeneous proportion of the applied electric field, the value of the ratio of the thickness (in the direction perpendicular to the sensor surface) of the interdigital electrodes to the distance of the individual interdigital electrodes from one another (in Direction parallel to
  • Sensor surface preferably in the range of 0.5 to 10 and is particularly preferably greater than 1.0.
  • Such a thickness-to-spacing ratio can be achieved by the photolithographic structuring of special len photoresists can be achieved with a very high aspect ratio or by special etching processes.
  • the electrically conductive interdigital electrodes are advantageously covered with a thin electrically insulating layer. This prevents short circuits that could be caused by the formation of drops.
  • This thin, electrically insulating layer used for passivation can consist, for example, of polymers or gas-sensitive metal oxides, in particular of SiO 2 or Si 3 N 4 .
  • the thickness-to-distance ratio of the interdigital electrodes according to the invention has the advantage of increased homogeneity of the electrical field used to measure the dielectric constant, as a result of which the capacitance to be measured and the measuring sensitivity are significantly increased. This reduces the measurement effort and the susceptibility to measurement errors.
  • two electrode structures are applied to the cold side of a pelletizing element in order to avoid measurement errors due to the formation of ice, an additional thermally insulating layer being located under one of the electrode structures.
  • This layer has a low specific thermal conductivity. There is no such thermally insulating layer under the other electrode structure.
  • Such an arrangement creates a temperature graph between the two electrode structures during the cooling process. serves, ie the electrode structures are continuously at a different temperature level (the required temperature gradient can be set via the thickness of the thermally insulating layer). For this reason, icing first takes place on the electrode structure without a thermally insulating base (reference electrode).
  • the occurrence of icing on the electrode structure without a thermally insulating base can then be detected using appropriate methods (for example resistive or optical).
  • cooling is continued until icing occurs on the electrode structure without an additional thermally insulating layer.
  • This icing or the time of its entry is determined and the measurement signal or the time of icing determined in this way is used to slow down the cooling process of the Peltier element in such a way that ice formation on the second electrode (in contrast to the electrode structure used as reference electrode without thermal insulating layer is used as the measuring electrode) is prevented.
  • the advantage of this arrangement is the avoidance of measurement errors due to the occurrence of ice formation.
  • dew point sensors according to the invention consist in the fact that a dew point sensor according to the invention does not require any further components and can be produced especially when using thin layer Peltier elements on a waver basis. For this reason, the control and evaluation control electronics can advantageously be integrated monolithically. The latter results in an enormous cost advantage, especially with larger quantities.
  • Dew point sensors according to the invention can be designed or used as described in one of the examples below. In the examples, identical reference numerals are used for the same or corresponding components of the dew point sensors.
  • FIG. 1 shows the basic sensor structure according to the invention.
  • FIG. 2 shows a section through the sensor structure from FIG. 1 for a more detailed explanation of the electrode structure.
  • FIG. 3 shows a layer structure and a sensor arrangement for avoiding measurement errors due to icing.
  • FIG. 4 shows temperature profiles of the arrangement from FIG. 3.
  • FIG. 5 shows a further temperature profile in the arrangement from FIG. 1.
  • FIG. 1 explains the basic structure and the basic sensor arrangement of a dew point sensor according to the invention.
  • a thin-layer Peltier element is sketched in a three-dimensional view. This has a warm side 3 on which a total of five thermoelectric legs 2a made of bismuth telluride
  • thermoelectric unit 2 which consists of the two mentioned or generally of different thermoelectric Materials exists
  • Cold side 1 of the Peltier element is outlined.
  • Cold side 1, thermoelectric unit 2 and hot side 3 of the Peltier element are each shown in simplified form as flat cuboids.
  • the dimension of the thin-film Peltier element shown is 0.6 mm ⁇ 0.6 mm (in general, the dimension mentioned is of a Peltier element used in the context of the invention preferably smaller than 5 mm x 5 mm, preferably smaller than 1 mm x 1 mm and particularly preferably smaller than 1 ⁇ m x 1 ⁇ m).
  • the cold side 1 of the Peltier element consists of a basic structure 1d, which is arranged directly adjacent to the thermoelectric unit 2 above this thermoelectric unit 2.
  • a thin insulation layer la is arranged directly adjacent to the basic structure 1d above the basic structure 1d.
  • the cold side also has a thin functional layer 1b, which is arranged directly adjacent to the insulation layer 1 a above the insulation layer 1 a.
  • the functional layer 1b is applied in order to reduce the obscuration of the sensor surface, as a result of which premature condensate formation and the resulting falsification of the measurement result are suppressed.
  • the insulation layer 1 a here has a thickness of 100 nm and consists of SiO 2 . It can also consist of Si 3 N 4 .
  • the insulation layer la is preferably at least 10 nm and at most 2 ⁇ m, particularly preferably 50 to 300 nm thick. Unless otherwise stated, the term thickness here means the extent in the direction perpendicular to the surface of the cold side 1 or in
  • the functional layer 1b has a thickness of 100 nm. In general, this layer is preferably at least 10 nm and at most 2 ⁇ m thick, particularly preferably between 50 and 300 nm thick.
  • the functional layer 1b consists of a polymer. You can also consist of Si0 2 or quite generally of hydrophobic and / or hydrophilic materials or have them.
  • the basic structure ld consists of Si, but can also consist of ceramic. It is 800 ⁇ m thick. Their thickness is generally preferably between 100 ⁇ m and 4 mm, in particular between 500 ⁇ m and 1000 ⁇ m.
  • an electrode structure 4, an actively heatable heating element 5 and a temperature sensor 6 are arranged directly adjacent to or directly on the functional layer 1b.
  • the active heating element 5 is arranged on the open side of the "U”.
  • the control contacts of the temperature sensor 6 can be seen as thickened portions.
  • the two thickened portions at the ends of the U-shaped active heating element 5 are also control or connection contacts.
  • the electrode structure 4 consists of two individual comb-shaped electrodes 4a and 4b.
  • Electrodes 4a and 4b are offset from one another so that their ends or the “prongs” of the comb structure interlock zipper-like.
  • the individual ends of the comb-shaped electrodes 4a and 4b appear alternately next to each other.
  • the electrodes 4a and 4b likewise have a thickening (control contact).
  • the electrodes 4a and 4b are made of platinum, the active heating element 5 is made of platinum and the temperature sensor 6 is also made of platinum.
  • the basis of the sensor element shown is the miniaturized Peltier element 1, 2, 3, since the basic structure ld of the cold side consists of an electrically conductive material (since the present Peltier element is made in a thin layer), the thin insulation layer 1 a is applied to avoid electrical short circuits.
  • the thin functional layer 1b is located directly on the insulation layer 1a, on which the structures 4, 5 and 6 are in turn applied directly.
  • the electrode structures 4 are thus located directly on the cold side 1 of the Peltier element.
  • the active heating element 5 and the temperature sensor 6 for determining the current surface temperature are also located directly on the cold side 1.
  • FIG. 2 as a section in the plane AA through the arrangement shown in Figure 1 (section plane perpendicular to the surface of the sensor element) shows the electrode structure 4 in more detail.
  • FIG Section shows the sectional illustration in FIG Section through the active heating element 5 and through the temperature sensor 6 not shown.
  • not all of the cut electrode sections of the electrodes 4a and 4b are shown.
  • Several electrode sections 4 arranged side by side are shown directly on the thin functional layer 1b. Due to the zipper-like interlocking of the electrodes 4a and 4b (see FIG. 1), the electrode sections shown alternately belong to the electrode 4a and the electrode 4b.
  • the electrodes or electrode sections are provided with a thin insulation layer 4c.
  • the insulation layer 4c completely surrounds the electrodes or electrode sections with the exception of the side of the electrodes directly adjacent to the functional layer 1b.
  • the insulation layer 4c is a polymer-based insulator layer.
  • the thickness of the electrodes or the electrode structures 4a, 4b in the direction perpendicular to the sensor surface is identified by d.
  • the distance between two adjacent electrode structures 4a and 4b in the section plane AA is identified by a.
  • the electrodes are structured in the case shown so that they have a thickness-to-distance ratio d / a of almost 1 or higher.
  • the ratio d / a is 4.0.
  • the measurement effect is caused primarily by changing the homogeneous field component and not as in the known arrangements the state of the art by changing the stray field capacity. This enables a larger measurement effect and more precise measurement results.
  • the electrodes 4 are provided with the thin electrically insulating layer 4c in order to avoid short circuits due to excessively large water drops. In the arrangement shown in FIGS.
  • the point in time at which the moisture in the ambient air condenses can be determined on the basis of a change in capacitance of the electrodes 4a and 4b applied to the sensor surface or cold side 1 of the Peltier element. As an alternative to this, this point in time can also be determined on the basis of a change in resistance of the electrodes 4a and 4b. Another possibility is to determine the point in time using optical methods which are used on the sensor surface (for example measurement of reflected light or of scattered light). With the active heating element 5, the sensor surface is heated in order to evaporate moisture condensed on the surface again.
  • the heating element 5 can be controlled and operated independently of the Peltier element 1, 2, 3.
  • FIG. 3 shows a further sensor arrangement according to the invention, which serves to avoid measurement errors due to icing. Except for a second active structure (consisting of electrode structure, heating element and temperature sensor) and an additional thermally insulating layer, the arrangement shown is basically identical to the arrangement shown in FIGS. 1 and 2.
  • the additional thermal iso- layer lc is arranged on one half of the surface of the Peltier element or its cold side 1 between the electrically insulating layer la and the functional layer 1b and immediately adjacent to these two layers. In the half of the Peltier element shown on the right in FIG.
  • the cold side 1 of the Peltier element has a three-layer structure consisting of basic structure Id, electrically insulating layer 1a and functional layer Ib (as in the sensor arrangement shown in FIGS. 1 and 2).
  • the thermal insulation layer 1c introduced between the electrically insulating layer 1 a and the functional layer 1 b in the right half of the sensor arrangement shown has a thickness adapted to the required temperature gradient (in the direction perpendicular to the sensor surface).
  • the thermal insulation layer 1c is thus to be designed in such a way that the required temperature gradient is set via its layer thickness.
  • a first active structure consisting of a first electrode structure 4 (with two electrodes 4a and 4b) is located above the functional layer 1b and directly adjacent to it in the partial region 1A or in the non-insulation region. arranged first active heating element 5 and first temperature sensor 6.
  • a second active structure consisting of a second electrode structure 4 ', a second active heating element 5' and a second temperature sensor 6 ' is arranged immediately adjacent to the functional layer 1b.
  • the two active structures 4, 5, 6 and 4 ', 5', 6 ' correspond in their structure and in their arrangement or in their geometry to the corresponding elements shown in FIGS. 1 and 2.
  • the electrode structure 4 of the partial area 1A serves as a reference electrode structure.
  • the electrode structure 4 'of the partial area 1B serves as a measuring electrode structure.
  • the additional thermally insulating layer 1c is thus located in the layer structure below the second electrode structure 4 'or the measuring electrode structure 4'.
  • the thermal insulating layer 1c which is only introduced in the area of the measuring electrode structure 4 ', creates a temperature gradient between the measuring electrode 4' and the reference electrode 4 during the cooling process. Due to this temperature difference or temperature gradient, the reference electrode 4 first icing instead. The occurrence of ice formation on the reference electrode 4 is determined using appropriate methods (for example using resistive methods) and serves as a signal for slowing down the cooling process.
  • the further cooling of the sensor element is slowed down from this point in time so that icing of the measuring electrode 4 ′ is prevented. It is important to ensure that Peltier element 1, 2, 3 is not operated in pulse mode.
  • the Peltier element 1, 2, 3 is advantageously operated with a ramp-shaped current during the cooling process, as is shown in FIG. 4 (see below). Due to the constant cooling of the sensor structures in the case of the ramp-shaped current, there is no temperature compensation between the measuring electrode 4 'and the reference electrode 4, as a result of which the temperature gradient is maintained.
  • FIG. 4 shows a temperature profile over time in the sensor arrangement shown in FIG. 3 with measuring electrode and reference electrode. The time course during or over the cooling process is shown.
  • the diagrams shown show the time t on the abscissa and the temperature of the Peltier element P (FIG. 4A) or the measuring electrode M and the reference electrode R (FIG. 4B) in Kelvin (T [K]) on the ordinate.
  • the electrodes M and R or the Peltier element P are shaped by a ramp Electricity (cooling capacity in the Peltier element proportional to the current) cooled until icing (ice point) takes place on the reference electrode R by the time t 0 .
  • the temperature T of the ice point is identified in the diagram in FIG. 4B by E p .
  • the cooling of the Peltier element or the electrodes is slowed down (visible from the smaller slope of the temperature curve in the time range t:> t 0 compared to the time range t ⁇ t 0 ). From time t 0 , the cooling thus proceeds more slowly until the desired condensation finally occurs on the measuring electrode M (time ti) and the dew point can thus be determined via the temperature T p of the measuring electrode M at this time tx.
  • the measuring cycle begins with a cooling phase of the miniaturized Peltier element 1, 2, 3. Because of the cooling, ice is first formed on the reference electrode 4 (especially with high humidity values).
  • the cooling process then follows so far continued to slow down until condensation occurs at the measuring electrode 4 '(time ti).
  • This condensation process is determined in the case shown by the increase in capacitance of the measuring electrode 4 '.
  • the dew point T P or the temperature T p present at the dew point is determined with the aid of the temperature sensor 6 '.
  • the Peltier element is switched off immediately and the surface moisture is evaporated by means of the activated heating element 5 ', and the ice layer is thawed and likewise evaporated by means of the activated heating element 5.
  • the measurement cycle described then begins again.
  • FIG. 5 serves to describe a further possible operating mode of the dew point sensor element shown in FIG. 1.
  • Such an operating mode even if it is described below with reference to the dew point sensor element shown in FIG. 1, is also possible with the dew point sensor element shown in FIG. 3.
  • FIG. 5A shows the course KP of the cooling power in the Peltier element 1, 2, 3 over the time t and the course of the heating power HH on the heating element 5 over the time t in the sensor arrangement shown in FIG.
  • the horizontal line KP for the Peltier element or the designation “on” was chosen to indicate that a constant cooling power is being used for the Peltier element 1, 2, 3.
  • the cooling capacity is selected so that when the heating element 5 is switched off, the temperature of the sensor surface is kept constant below the dew point temperature T p . In contrast, the heating element 5 is not operated or heated in the time interval [0, t 0 ]
  • Heating power 0 watt (Heating power 0 watt, symbolized by the designation “off”).
  • the active heating element 5 is then switched on or the heating power HH 0 is expended. This heating power HH 0 is maintained during the time interval [t 0 , ti] of
  • the heating power is reduced at a constant rate, so that the heating power is 0 watt again at time t 2 . No heating power is then used for the period t> t 2 .
  • the cooling power KP used for the Peltier element 1, 2, 3 is now selected as described so that the sensor surface of the dew point sensor element (more precisely the surface on which the active structures 4, 5, 6 are located, i.e. the cold side 1) is miniaturized Peltier element 1, 2, 3 is kept constant below the dew point temperature T p .
  • the measurement or, in the case of repeated measurement, the measurement cycle
  • the said sensor surface is heated above the dew point temperature T p .
  • the heating takes place in such a way that there is no more condensation on the measuring electrode 4 after the heating has been completed.
  • FIG. 5B in which the temperature T of the measuring electrode M is plotted in Kelvin over time. Before the sensor surface is heated, the temperature of the measuring electrode is T 0 . At time t 0 (at which the
  • Heating element 5 is switched on) the measuring electrode M begins to heat up. This leads to a constant rise in the temperature of the measuring electrode M in the time interval [t 0 , ti] up to the temperature Ti above the dew point temperature T p .
  • the temperature of the measuring electrode M slowly and linearly decreases during the time interval [ti, t 2 ].
  • Heating element thus slowly cools the sensor surface during this time interval and it comes to Condensation on electrode 4: This occurs at time t p .
  • This condensation process is then, as described above for FIG. 4, determined by the increase in capacitance of the measuring electrode 4.
  • the dew point T p or the temperature T p present at the dew point is then determined using the temperature sensor 6.
  • the temperature of the measuring electrode then again has the constant temperature T 0 below the temperature T p for the times t> t 2 . After such a measurement has taken place, the sensor surface can be heated again by the heating element 5 and the measurement cycle described above can thus be started again.
  • the temperature is regulated via the heating element 5 (which is arranged directly on the sensor surface) and not via the Peltier element 1, 2, 3 as described above in FIG. 4, the individual measuring cycles can be carried out more quickly become. The measurement rate can thus be increased.

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Abstract

L'invention concerne un procédé et un dispositif détecteur pour la mesure du point de rosée, sur la base d'éléments Peltier miniaturisés. Un détecteur de point de rosée selon l'invention comprend un élément Peltier (1, 2, 3), une structure d'électrode (4), un capteur de température (6) et un élément de chauffage (5) pouvant être chauffé activement, et est caractérisé en ce que la structure d'électrode (4), le capteur de température (6) et l'élément de chauffage (5) sont disposés directement sur l'élément Peltier (1, 2, 3), ou directement adjacent à celui-ci, sur son côté froid.
PCT/EP2005/004172 2004-04-19 2005-04-19 Dispositif detecteur et procede de mesure du point de rosee, sur la base d'elements peltier miniaturises WO2005100964A1 (fr)

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DE200410018809 DE102004018809B4 (de) 2004-04-19 2004-04-19 Sensoranordnung und Verfahren zur Taupunktmessung auf Basis von miniaturisierten Peltierelementen
DE102004018809.2 2004-04-19

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EP3211404A1 (fr) * 2016-02-25 2017-08-30 ams AG Dispositif de détection de point de rosée compatible cmos et procédé de détermination d'un point de rosée
CN114712546A (zh) * 2022-05-19 2022-07-08 中电科奥义健康科技有限公司 一种平面结构消毒因子发生装置及制作方法

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IT201600079080A1 (it) * 2016-07-27 2018-01-27 Primax S R L Dispositivo di rilevamento della temperatura del punto di rugiada dell’atmosfera di una camera di trattamento termico

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EP3211404A1 (fr) * 2016-02-25 2017-08-30 ams AG Dispositif de détection de point de rosée compatible cmos et procédé de détermination d'un point de rosée
WO2017144458A1 (fr) * 2016-02-25 2017-08-31 Ams Ag Capteur de point de rosée compatible cmos et procédé de détermination d'un point de rosée
CN109073578A (zh) * 2016-02-25 2018-12-21 ams有限公司 Cmos兼容的露点传感器装置和确定露点的方法
US11002696B2 (en) 2016-02-25 2021-05-11 Sciosense B.V. CMOS-compatible dew point sensor device and method of determining a dew point
US11525793B2 (en) 2016-02-25 2022-12-13 Sciosense B.V. CMOS compatible dew point sensor device and method of determining a dew point
CN114712546A (zh) * 2022-05-19 2022-07-08 中电科奥义健康科技有限公司 一种平面结构消毒因子发生装置及制作方法

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DE102004018809B4 (de) 2006-06-01

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