WO2005096357A1

WO2005096357A1 - Method for manufacturing semiconductor device

Info

Publication number: WO2005096357A1
Application number: PCT/JP2005/005947
Authority: WO
Inventors: Satoshi Shibata
Original assignee: Matsushita Electric Industrial Co., Ltd.
Priority date: 2004-03-31
Filing date: 2005-03-29
Publication date: 2005-10-13
Also published as: CN1774795A; JP2005294341A; EP1732112A4; JP3737504B2; US20070054444A1; KR20070000330A; US7737012B2; CN100401476C; EP1732112A1

Abstract

An amorphous layer (101) is formed in a region between the surface and the first depth (A) of a semiconductor substrate (100). At this time, a defect (103) occurs in the vicinity of an amorphous/crystal interface (102). Following that, the crystal structure of the amorphous layer (101) is restored by a heat treatment in a region from the first depth (A) to the second depth (B) which is shallower than the first depth (A). Consequently, the amorphous layer (101) ranges from the surface of the silicon substrate (100) to the second depth (B). In this connection, the defect (103) remains at the first depth (A). A pn junction (104) is then formed at the third depth (C), which is shallower than the second depth (B), through ion implantation.

Description

Specification

Method for manufacturing semiconductor device

Technical field

The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for forming a shallow junction in which leakage current is suppressed.

Background art

[0002] In recent years, short-channel effects in transistors have become a serious problem as the degree of integration, function, and speed of semiconductor integrated circuit devices increase. Here, as one of the techniques for eliminating the short channel effect, a method using a drain extension having an extremely shallow pn junction is known.

[0003] For example, in a transistor having a gate electrode dimension of 65 nm, it is said that the depth of the pn junction of the drain extension is preferably about 13 nm. In order to realize this, a flash lamp annealing technology and a laser annealing technology for suppressing the thermal budget time to several milliseconds have been studied.

[0004] However, in such a short-time heat treatment technique, the heat treatment time is extremely short, so that the impurity activation ratio varies due to the influence of the pattern on the semiconductor device. As a result, there is a disadvantage that the transistor characteristics vary. This disadvantage can be fatal in mass production of system LSIs having various patterns.

[0005] Therefore, a technique has been proposed in which heat treatment is performed for several minutes in a temperature range of, for example, 500 ° C. or more and 800 ° C. or less, which is a temperature at which only impurity diffusion occurs and diffusion does not occur. This is called low temperature SPE (Solid Phase Epitaxy) technology.

Hereinafter, a conventional low-temperature SPE technique will be described with reference to the drawings, taking the formation of a P-channel transistor as an example.

[0007] FIGS. 6 (a) to 6 (c) and FIGS. 7 (a) and 7 (b) are cross-sectional views schematically showing steps of forming a P-channel transistor using a low-temperature SPE technique.

First, as shown in FIG. 6A, a gate electrode is formed on a silicon substrate 10 with a gate insulating film 11 interposed therebetween. Form pole 12. Next, germanium or silicon is ion-implanted into the region on both sides of the gate electrode 12 on the silicon substrate 10 under the conditions of an implantation energy of several KeV to several tens OkeV to form an amorphous layer 13. At this time, defects 14 occur near the interface between the amorphous layer 13 and the silicon substrate 10 having a crystal structure below the amorphous layer 13.

Next, as shown in FIG. 6 (b), a drain extension 15 is formed by ion-implanting boron as a dopant into the amorphous layer 13 at an implantation energy IkeV or less.

[0010] Next, as shown in FIG. 6 (c), arsenic or antimony is ion-implanted into a region on both sides of the gate electrode 12 in the silicon substrate 10 at an angle of, for example, 25 degrees with respect to a normal to the substrate surface. A halo region 16 is formed.

Subsequently, as shown in FIG. 7A, sidewalls 17 are formed on both sides of the gate electrode 12. Thereafter, boron is ion-implanted into the silicon substrate 10 on both sides of the gate electrode 12 and the sidewall 17 at an implantation energy of several keV to form a contact drain 18.

Finally, as shown in FIG. 7 (b), a heat treatment is performed at a temperature of 500 ° C. or more and 800 ° C. or less for several minutes. As a result, the amorphous layer 13 recovers its crystal structure, and there is no amorphous region in the silicon substrate 10. However, the defect 14 remains in the region that was the interface between the amorphous layer 13 and the silicon substrate 10.

[0013] As described above, boron implanted as a dopant for forming the drain extension 15 causes rapid activation without diffusion inside the amorphous layer 13 during the process of recovering the crystal structure of the amorphous layer 13. Awaken. As a result, a shallow pn junction can be formed. The depth of the pn junction formed by this technique is largely determined by the impurity profile formed immediately after ion implantation.

Incidentally, the amorphous layer 13 is formed to a position deeper than the depth of the pn junction of the drain extension 15. To this end, the implantation energy when germanium or silicon is implanted into the silicon substrate 10 to form the amorphous layer 13 is controlled by the profile of boron implanted to form the drain extension 15 within the amorphous layer 13. Set so that everything fits in. [0015] Thus, the drain extension 15 having a pn junction depth of less than 20 nm is formed. Since the time of the heat treatment is as long as several minutes, the drain estate 15 has extremely low pattern dependency. The pattern dependency means that the activation ratio of impurities and the like vary within the wafer surface (within one chip) due to the effect of the formed pattern. Specifically, for example, when the gate electrode which also has the polysilicon force is not uniformly distributed at all positions in the wafer, it means that the impurity diffusion rate varies due to the difference in the distribution.

Non-Patent Document 1: John 0. Borland, Low Temperature Activation of Ion Implanted Dopants, Extended Abstracts of International Workshop on Junction Technology 2002, Japan Society of Applied Physics, December 2002 , P.85-88

Disclosure of the invention

Problems to be solved by the invention

[0016] However, the following problems arise in the low-temperature SPE technology described above. In other words, since the depth of the amorphous layer is about 15 nm to 30 nm, defects generated at the interface between the amorphous layer and the crystal (silicon substrate) layer during ion implantation are caused by the position of the pn junction in the halo region and the pn in the drain extension. It will be located very close to the junction. As a result, in conventional semiconductor integrated circuit devices manufactured using low-temperature SPE technology, the junction leakage current will increase significantly compared to semiconductor integrated circuit devices manufactured using flash lamp annealing or laser annealing. The problem arises.

[0017] In view of the above, an object of the present invention is to provide a method of manufacturing a semiconductor device using low-temperature SPE technology, which suppresses junction leakage current and suppresses pattern dependency. Means for solving the problem

[0018] In order to achieve the above object, the inventor of the present application has come up with a method for suppressing a junction leak current as follows. In other words, the position of a defect generated near the interface between the amorphous layer and the crystalline region when forming the amorphous layer is set according to the depth of each pn junction of the semiconductor device. As a result, the defect occurring at the amorphous / crystalline interface is separated from the position of each pn junction, which is essential for transistors, etc., and junction leakage current is suppressed. This way It is.

[0019] Specifically, the first method for manufacturing a semiconductor device according to the present invention includes a step of forming an amorphous layer in a surface area of a semiconductor region up to a first depth and a step of forming an amorphous layer on the amorphous layer. By performing the heat treatment at a predetermined temperature, the crystalline structure of the amorphous layer in the region from the first depth to the second depth shallower than the first depth is recovered, and the amorphous structure is thereby restored. A step of retracting the layer to a second depth, and a step of forming a pn junction at a third depth shallower than the second depth by introducing ions into the heat-treated amorphous layer. RU

According to the first method for manufacturing a semiconductor device, the thickness of the amorphous layer when introducing ions and the position of a defect generated when forming the amorphous layer can be separately set. This will be described in more detail below.

When an amorphous layer is formed in a semiconductor region, crystal defects occur near an interface between the amorphous layer and a region having a crystal structure in the semiconductor region (hereinafter, referred to as an amorphous ′ crystal interface). In the first method for manufacturing a semiconductor device, since the amorphous layer is formed in a region from the surface of the semiconductor region to the first depth, the amorphous ′ crystal interface exists at the first depth and the defect Also exist near the first depth. Here, by performing a heat treatment on the amorphous layer to recover the crystal structure in a region from the first depth to a second depth shallower than the first depth, the surface force of the semiconductor region becomes lower. The region at the depth of becomes the amorphous layer. As a result, the amorphous-crystal interface after the heat treatment exists at the second depth. As described above, the thickness of the amorphous layer (the second depth where the amorphous / crystalline interface exists) and the position where the defect exists (the first depth) can be separately set. . Thereafter, a pn junction is formed at a third depth shallower than the second depth by ion implantation into the amorphous layer. By doing so, it is possible to sufficiently separate the crystal defect generated near the first depth during the formation of the amorphous layer and the pn junction formed at the third depth.

As a result, the junction leakage current can be reduced by the first method for manufacturing a semiconductor device. In other words, the presence of a defect and a pn junction close to each other causes a junction leak current. However, according to the first method for manufacturing a semiconductor device, the defect and the pn junction are located at a sufficient distance from each other. It is the force that can exist in the place.

Here, if the heat treatment for the amorphous layer is a heat treatment for a relatively long time of several minutes, an activation treatment without pattern dependency can be performed. As a result, a semiconductor device having a shallow pn junction (for example, a drain extension junction) and having reduced junction leakage current can be manufactured without pattern dependence.

In the first method for manufacturing a semiconductor device, the predetermined temperature at the time of performing the heat treatment is preferably 475 ° C. or more and 600 ° C. or less.

By performing the heat treatment at such a set temperature for a relatively long time of several minutes, it is possible to surely perform the activation treatment without pattern dependence. As a result, it is possible to reliably manufacture a semiconductor device having a shallow pn junction (for example, a drain extension junction) and having a reduced junction leak current without pattern dependence.

[0026] The second method for manufacturing a semiconductor device according to the present invention includes a step of forming an amorphous layer in a region having a surface force up to a first depth in a semiconductor region of the first conductivity type; By performing the heat treatment at a predetermined temperature, the crystalline structure of the amorphous layer in the region from the first depth to the second depth shallower than the first depth is recovered, and the amorphous structure is thereby restored. The step of retracting the layer to the second depth and the introduction of ions into the heat-treated amorphous layer form the second conductivity type having a pn junction at a third depth shallower than the second depth. The method includes a step of forming one impurity layer, and a step of performing an activation treatment on the first impurity layer.

According to the second method for manufacturing a semiconductor device, a semiconductor device in which an impurity region having a shallow pn junction is formed is manufactured while reducing the junction leakage current in the same manner as in the first method for manufacturing a semiconductor device. be able to. If the heat treatment for the amorphous layer and the activation treatment for the first impurity layer are performed for a relatively long time of several minutes, the pattern recovery in the crystal structure of the amorphous layer and the activation of the impurity layer are performed in each step. Dependencies can be prevented.

[0028] A third method of manufacturing a semiconductor device according to the present invention includes a step of forming a gate electrode on a semiconductor region of the first conductivity type, and a step of forming a gate electrode on the semiconductor region of the first conductivity type. Forming an amorphous layer in a region up to a depth of 1; By performing the heat treatment at the temperature, the crystalline structure is recovered in the region of the amorphous layer from the first depth to the shallower than the first depth and from the second depth, thereby recovering the amorphous layer. A second conductivity type having a pn junction at a third depth shallower than the second depth by introducing ions into the heat-treated amorphous layer. Forming a second impurity layer and introducing ions into the heat-treated amorphous layer to form a second pn junction having a pn junction at a position shallower than the first depth and deeper than the third depth. A step of forming a second impurity layer of one conductivity type; and a step of performing an activation treatment on the first impurity layer and the second impurity layer.

According to the third method for manufacturing a semiconductor device, a MOS FET (Metal Oxide Semiconductor Feild Effect Transistor) having an impurity layer having a shallow pn junction is subjected to junction leakage in the same manner as in the first method for manufacturing a semiconductor device. It can be manufactured while reducing the current. In addition, when the heat treatment for the amorphous layer and the activation treatment for the first impurity layer are performed for a relatively long time of several minutes, the crystal structure recovery of the amorphous layer and the impurity layer activation process are performed in each of the steps. Thus, the occurrence of pattern dependency can be prevented.

Further, since the second impurity layer is formed, the effect of the present invention for reducing the leakage current when manufacturing a semiconductor device having, for example, a no- or low-region as the second impurity layer is manufactured. Can be realized.

In the first, second, or third method for manufacturing a semiconductor device according to the present invention, the third depth is preferably 5 nm or more and 15 nm or less!

When the first impurity layer is formed with the third depth being such a depth, the effect of reducing junction leakage current and pattern dependency is reduced, and the first impurity layer is formed, for example, by a shallow pn junction. It can be used as a drain extension or the like that has an effect, and is useful for alleviating the short channel effect.

[0033] In the second or third method for manufacturing a semiconductor device according to the present invention, the predetermined temperature of the heat treatment is 475 ° C or more and 600 ° C or less, and the first impurity The activation treatment of the layer or the first impurity layer and the second impurity layer is preferably performed in a temperature range of 500 ° C. or more and 700 ° C. or less. [0034] When the heat treatment is performed at such a temperature and for a relatively long time of several minutes, it is possible to prevent the occurrence of pattern dependency when the crystal structure of the amorphous layer is recovered. it can. At the same time, when the impurity layer is activated, the impurity layer can be activated while suppressing the pattern-dependent occurrence and diffusion of impurities as a low-temperature SPE technique.

The pattern of the gate electrode formed on the semiconductor region may be unevenly distributed on the semiconductor region.

Here, that the pattern of the gate electrode formed on the semiconductor region is unevenly distributed on the semiconductor region means that, for example, the gate electrode is densely formed in a certain region on the semiconductor region. In addition, it refers to a case in which a region is formed sparsely in another region.

In such a case, by performing a heat treatment at a low temperature for several minutes, the effect of the present invention that a semiconductor device having characteristics without pattern dependency can be manufactured can be remarkably exhibited. The effect of low-temperature SPE technology is remarkable. In addition, even when patterns other than the gate electrode are unevenly distributed, the effects of the present invention can be remarkably obtained.

[0038] A fourth method of manufacturing a semiconductor device according to the present invention includes a step of forming a gate electrode on a semiconductor region of the first conductivity type, and a step of forming a gate electrode in a region from the surface to the first depth in the semiconductor region. At the same time as forming the amorphous layer and forming an insulating sidewall on the side surface of the gate electrode, a heat treatment at a predetermined temperature performed at the time of forming the sidewall allows the first depth of the amorphous layer to be formed. In a region from to a second depth shallower than the first depth, thereby recovering the crystal structure, whereby the amorphous layer is retracted to the second depth, and the heat treatment is performed. Step of forming a first impurity layer having a pn junction at a third depth shallower than the second depth and having a second conductivity type by introducing ions into regions on both sides of the gate electrode in the amorphous layer When And a step of performing active I spoon processing of the first impurity layer

According to the fourth method for manufacturing a semiconductor device, when forming a MOS FET or the like having an impurity layer having a shallow pn junction, the junction leakage current can be reduced as in the first method. In addition, when the heat treatment for the amorphous layer and the activation treatment for the first impurity layer are performed for a relatively long time of several minutes, the crystal structure recovery of the amorphous layer and the activation of the impurity layer are performed separately. In addition, the occurrence of pattern dependency Can be prevented.

Further, the step of forming the sidewall and the step of restoring the crystal structure of the amorphous layer in the region from the first depth to the second depth are performed in the same step, whereby the semiconductor device The manufacturing process can be simplified.

[0040] After the step of forming the first impurity layer, ions are introduced into regions on both sides of the gate electrode in the amorphous layer, so that a position shallower than the first depth and deeper than the third depth is obtained. A step of forming a second impurity layer of a first conductivity type having a pn junction in the step of performing the activation treatment of the first impurity layer. It is preferable to carry out simultaneously.

In this way, the effect of the present invention of reducing the leak current can be realized when manufacturing a semiconductor device having, for example, a halo region as the second impurity layer.

[0042] In the fourth method for manufacturing a semiconductor device according to the present invention, it is preferable that the third depth is not less than 5 nm and not more than 15 nm!

When the first impurity layer is formed with the third depth being such a depth, the effect of reducing junction leakage current and pattern dependency is reduced, and the first impurity layer is formed, for example, by a shallow pn junction. It can be used as a drain extension or the like that has the property, and is useful for alleviating the short channel effect.

Further, in the fourth method of manufacturing a semiconductor device according to the present invention, the predetermined temperature of the heat treatment is 475 ° C. or more and 600 ° C. or less, and the first impurity layer or the first The activation treatment of the first impurity layer and the second impurity layer is preferably performed in a temperature range of 500 ° C. or more and 700 ° C. or less.

[0045] When the heat treatment is performed at such a temperature and for a relatively long time of several minutes, it is possible to prevent the occurrence of pattern dependency when the crystal structure of the amorphous layer is recovered. it can. At the same time, when the impurity layer is activated, the first impurity layer or the first impurity layer and the second impurity layer are formed as a low-temperature SPE technique while suppressing the occurrence of pattern dependency and the diffusion of impurities. Can be activated.

The pattern of the gate electrode formed on the semiconductor region may be unevenly distributed on the semiconductor region. In such a case, by performing a heat treatment at a low temperature for several minutes, the effect of the present invention that a semiconductor device having characteristics without pattern dependency can be manufactured can be remarkably exhibited. The effect of low-temperature SPE technology is remarkable. In addition, even when patterns other than the gate electrode are unevenly distributed, the effects of the present invention can be remarkably obtained.

The invention's effect

According to the method of manufacturing a semiconductor device according to the present invention, the thickness of the amorphous layer is changed after the amorphous layer is formed. Therefore, it is possible to freely set the position of the defect generated during the formation of the amorphous layer and the position of the interface between the amorphous layer and the crystalline region of the semiconductor region (amorphous-crystalline interface), and the position of the defect And the depth of the amorphous layer can be sufficiently separated.

[0049] As a result, by forming the pn junction inside the amorphous layer, the position of the defect and the position of the pn junction can be sufficiently separated. Therefore, a shallow drain extension junction or the like can be formed while suppressing junction leakage current caused by defects. In addition, the use of the low-temperature SPE technology can prevent the occurrence of pattern dependency.

Brief Description of Drawings

[FIG. 1] FIGS. L (a) to (d) are schematic cross-sectional views showing each step of a method for manufacturing a semiconductor device according to the first embodiment of the present invention.

FIGS. 2 (a) to 2 (c) are schematic diagrams showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention, up to formation of a gate electrode forming amorphous layer. It is sectional drawing.

FIGS. 3 (a) to 3 (c) are schematic diagrams showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention up to the step of activating a halo region forming impurity layer. It is a sectional view

FIGS. 4 (a) to 4 (c) are schematic diagrams showing, from a method of manufacturing a semiconductor device according to a third embodiment of the present invention, up to formation of a gate electrode forming amorphous layer. It is sectional drawing.

FIGS. 5 (a) to 5 (c) are schematic views showing a method of manufacturing a semiconductor device according to a third embodiment of the present invention, up to the step of activating a halo region forming impurity layer. It is a sectional view [FIG. 6] FIGS. 6 (a) to 6 (c) are schematic cross-sectional views showing steps from the formation of a gate electrode to the formation of an amorphous layer in a conventional method of manufacturing a semiconductor layer.

[7] FIGS. 7 (a) and 7 (b) are schematic cross-sectional views showing a contact drain formation force and an impurity layer activation in a conventional semiconductor layer manufacturing method.

Explanation of symbols

100 silicon substrate

101 Amorphous layer

102 Amorphous crystal interface

103 defects

104 pn junction

106 Gate insulating film

107 Gate electrode

108

109 Hachiguchi One Area

110 Sidewall

111 Contact drain

A 1st depth

B 2nd depth

C 3rd depth

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment)

Hereinafter, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described with reference to the drawings.

FIGS. 1A to 1D are cross-sectional views schematically illustrating steps of a method for manufacturing a semiconductor device according to the first embodiment.

First, as an example of a semiconductor region, an n-type silicon substrate 100 is prepared as shown in FIG. 1 (a). Next, as shown in FIG. 1 (b), ions of, for example, germanium or silicon are implanted into the silicon substrate 100, and the surface force of the silicon substrate 100 is also reduced to a region up to the first depth A. An amorphous layer 101 is formed. At this time, a defect 103 is generated near an interface between the silicon substrate 100 and the crystal region of the amorphous layer 101 (hereinafter, referred to as an amorphous' crystal interface 102), in other words, near the first depth A. Here, by adjusting the implantation energy at the time of ion implantation, the first depth A at which the amorphous layer 101 is formed can be arbitrarily set. As a result, the depth at which the defect 103 exists can be reduced. Can be set arbitrarily.

Next, heat treatment is performed on silicon substrate 100 at a low temperature (for example, 500 ° C.). Thereby, the amorphous layer 101 recovers the crystal structure at a predetermined recovery rate from the amorphous crystal interface 102 toward the surface of the silicon substrate 100. At this time, by adjusting the heat treatment temperature and the treatment time, as shown in FIG. 1 (c), the crystal structure was recovered to an arbitrary second depth B which was shallower than the first depth A, The amorphous layer 101 can be reduced to a region from the surface of the silicon substrate 100 to the second depth B. In other words, the thickness of the amorphous layer 101 is the thickness from the surface of the silicon substrate 100 to the second depth B.

As a result, the defect 103 existing at the first depth A, which was the position of the amorphous-crystal interface 102 before heat treatment, and the amorphous' crystal interface 10 2 after heat treatment existing at the second depth B, And can be sufficiently separated.

Thereafter, as shown in FIG. 1D, impurity ions are implanted into the amorphous layer 101 to form a pn junction 104 at a third depth C, which is shallower than the second depth B. To form That is, the pn junction 104 is formed inside the amorphous layer 101.

According to the first embodiment, the position of the amorphous ′ crystal interface and the position of the defect can be controlled and separated. For this reason, by performing ion implantation using the amorphous layer, the range that can be selected as the position of each junction necessary for forming the transistor of the semiconductor device is widened. In other words, it is possible to avoid defects existing at the position of the amorphous' crystal interface when the amorphous layer is initially formed, and to arbitrarily select the position of each junction.

Specifically, by setting conditions for ion implantation, the depth (first depth A) at which the amorphous layer 101 is formed can be arbitrarily set. This results in defect 103 The depth can be set arbitrarily. Next, by setting conditions for performing the heat treatment on the amorphous layer 101, the depth of the amorphous layer 101 after the heat treatment (the second depth B, which is shallower than the first depth A) is set. It can be set arbitrarily. Furthermore, when a pn junction 104 is formed inside the amorphous layer 101 by performing ion implantation on the amorphous layer 101 after the heat treatment, the pn junction 104 has a third depth C which is shallower than the second depth B. Will be formed. Since the second depth B is shallower than the first depth A, the position of the pn junction 104 (third depth C) is set at a position away from the defect 103 existing at the first depth A. Will be

With the above, the junction leak current can be reduced. If the defect 103 and the pn junction 104 are close to each other, a junction leak current may be caused. However, according to the present embodiment, the defect 103 and the pn junction 104 can be set at positions sufficiently separated from each other.

[0062] The temperature of the heat treatment (low-temperature annealing) for recovering the depth of the amorphous layer 101 is preferably not less than 475 ° C and not more than 600 ° C. ing . When annealing is performed at such a temperature, the roughness of the amorphous ′ crystal interface 102 immediately after the formation of the amorphous layer 101 can be made substantially flat after the heat treatment. Specifically, the roughness of the amorphous / crystalline interface 102 can be reduced to 1 nm or less.

In this embodiment, a p-type silicon substrate using an n-type silicon substrate 100 as a semiconductor region may be used.

In the present embodiment, ions are introduced into the amorphous layer by ion implantation. However, ions may be introduced by other means, for example, plasma doping.

(Second Embodiment)

Hereinafter, a method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described with reference to the drawings.

FIGS. 2 (a) to 2 (c) and 3 (a) to 3 (c) are cross-sectional views schematically showing steps of a method for manufacturing a semiconductor device according to the second embodiment.

First, as shown in FIG. 2A, a gate electrode 107 having a polysilicon force is formed on an n-type silicon substrate 100 as a semiconductor region via a gate insulating film 106. This may be formed using, for example, a known lithography technique and etching technique. Where The length is, for example, 70 nm.

Next, ions of, for example, germanium or silicon are implanted into regions on both sides of the gate electrode 107 in the silicon substrate 100, and the surface of the silicon substrate 100 has an amorphous layer having a thickness up to the first depth. Form 101. Here, the thickness of the amorphous layer 101 refers to the thickness from the surface of the silicon substrate 100 to the lower surface of the amorphous layer 101. That is, for example, the amorphous layer 101 has a shallow force below the gate electrode 107. It refers to the thickness of other parts, not the shallow part. Hereinafter, in this specification, for other regions, the thickness refers to the thickness of the surface of the silicon substrate 100 up to the lower surface of the region. Similarly, the depth of a pn junction refers to the depth of the lower surface of the junction.

By adjusting the ion implantation energy, the first depth is set at a position deeper than various pn junctions required for forming a transistor.

Specifically, for example, germanium is implanted at an implantation energy of 60 keV and a dose of 3

When implanted under the conditions of X 10 ¹⁴ / cm ^2, the first depth is about 80 nm. This depth is deeper than a pn junction such as a drain extension and a narrow region to be formed later.

Further, when the amorphous layer 101 is formed, a defect 103 is generated near the interface between the crystalline region of the silicon substrate 100 and the amorphous layer 101 (the interface exists at the first depth). .

Next, heat treatment is performed for several minutes in a temperature range of 475 ° C. or more and 600 ° C. or less, for example, a temperature of 500 ° C. Thereby, the crystal structure can be recovered in a region of the amorphous layer 101 up to an arbitrary second depth that is shallower than the first depth force first depth. As a result, the amorphous layer 101 is reduced to a region from the surface of the silicon substrate 100 to the second depth. This is shown in Fig. 2 (b). In the present embodiment, the second depth is 15ηπ! ~ 3 Onm.

When the crystal structure of the amorphous layer 101 is recovered, the position of the defect 103 does not change.

, Remains near the first depth.

However, the temperature range of 475 ° C. or more and 600 ° C. or less in the present embodiment is preferably a temperature range, but is not limited thereto.

Subsequently, as shown in FIG. 2 (c), both sides of the gate electrode 107 in the amorphous layer 101 are formed. Boron or the like which is an impurity is ion-implanted into the region using the gate electrode 107 as a mask. As a result, a p-type drain extension 108 that partially enters below the gate electrode 107 is formed as a first impurity layer. In this case, for example, implantation energy and a dose amount below IkeV is subject of l X 10 "Zcm ^2. The drain extension 108 is formed to a depth of, for example, 5 nm to 15 nm.

By implanting boron or the like into the amorphous layer 101, the channeling phenomenon can be suppressed, so that boron does not enter deep portions of the silicon substrate 100. For this reason, the drain extension 108 can be formed in a region sufficiently shallower than the second depth.

A pn junction is formed at the boundary between the p-type drain extension 108 and the n-type silicon substrate 100, and the position of the pn junction is sufficiently away from the defect existing at the first depth. I have. For this reason, a connection leak current caused by the defect 103 can be suppressed.

Next, as shown in FIG. 3A, using the gate electrode 107 as a mask, for example, arsenic is applied to a region on both sides of the gate electrode 107 in the silicon substrate 100 at a dose of 5 × 10 ¹³ / cm ² and Ion implantation is performed under the condition of an angle of 25 degrees with respect to the normal to the substrate surface. Thus, an n-type halo region 109 is formed as a second impurity layer so as to penetrate further below the gate electrode 107 than the drain extension 108 and surround the drain extension 108.

Here, the pn junction between the n-type halo region 109 and the p-type drain extension 108 is also sufficiently away from the defect 103 existing at the first depth, so that the connection leakage current caused by the defect 103 Can be suppressed.

Further, as shown in FIG. 3B, insulating sidewalls 110 are formed on both side surfaces of the gate electrode 107. Subsequently, ions of an n-type impurity are implanted into regions on both sides of the gate electrode 107 and the sidewall 110 in the silicon substrate 100 as a mask for the gate electrode 107 and the sidewall 110. Thereby, the contact drain 111 is formed. The contact drain 111 is higher than the drain extension 108 to reduce the contact resistance! 抵抗 The impurity concentration is set to be lower than the first depth (about 80 nm in this embodiment), for example, about 60 nm. I do.

Next, the drain extension 108, the halo region 109, the contact drain 111, etc. Is activated. This uses low-temperature SPE technology. Specifically, the heat treatment is performed under the condition that the temperature is 500 ° C. or more and 800 ° C. or less and the processing time is 2 minutes or more and 3 minutes or less. However, the temperature range of 500 ° C. or more and 800 ° C. or less is a preferable condition, and is not limited to this. The activation treatment is more preferably performed in a temperature range of 500 ° C. or more and 700 ° C. or less.

[0082] As a result, the amorphous layer 101 recovers the crystal structure and the amorphous region 101 does not exist in the silicon substrate 100, and the impurity such as the drain extension 108, the halo region 109, and the contact drain 111 does not exist. The layer can be activated without the diffusion of impurities. The result is shown in FIG. 3 (c). Also, this heat treatment is comparatively long, for example, several minutes, unlike flash annealing or the like which performs processing in a short time. For this reason, even if the pattern formed on the silicon substrate 100 has non-uniformity such as the density difference of the gate electrode 107, a transistor having a characteristic without variation without being affected by the non-uniformity is required. Can be formed.

As described above, according to the present embodiment, after the amorphous layer 101 is initially formed in the silicon substrate 100 in the region up to the first depth, the crystal structure of the amorphous layer 101 is partially reduced by heat treatment. Recover and retract the amorphous' crystal interface to a second depth that is shallower than the first depth. Therefore, it is possible to separate the defect 103 existing at the first depth from the heat-treated amorphous' crystal interface at the second depth. Subsequently, when the drain extension 108 and the halo region 109 are formed inside the amorphous layer 101 by performing ion implantation on the amorphous layer 101, the respective pn junctions and the defects 103 can be sufficiently separated. .

As described above, it is possible to suppress the junction leak current generated when the defect 103 and the pn junction are close to each other. By utilizing this, it is possible to manufacture a semiconductor device in which the pattern dependence is suppressed by the low-temperature SPE technique and the junction leak current is suppressed by the effect of the present invention.

[0085] In a fine transistor having a gate size smaller than, for example, about 90 nm, it is preferable to form a halo region 109 as a second impurity layer. The halo region 109 is not an essential element of the present embodiment, and may be formed as necessary! [0086] In the present embodiment, the first depth is about 80 nm, the second depth is 15 nm to 30 nm, and the depth of the drain extension 108 is 5ηπ! ~ 15nm! / These are! And deviations are also preferred! / ヽ values, but are not limited to these and may be set as needed.

The conditions of ion implantation (implantation energy, implantation angle, dose amount, etc.) in the formation of the amorphous layer 101 and the formation of the drain extension 108, the halo region 109, and the contact drain 111 are described in the present embodiment. It is a preferable condition to set each value, but it is not limited to these. Further, in the present embodiment, ions are introduced into the amorphous layer 101 by ion implantation, but ions may be introduced by means other than ion implantation such as plasma doping.

In the present embodiment, the first conductivity type is n-type, and the second conductivity type is p-type. However, conversely, the first conductivity type may be p-type and the second conductivity type may be n-type.

Further, in the present embodiment, after the gate electrode 107 is formed on the silicon substrate 100, the amorphous layer 101 is formed. The order may be reversed to form the gate electrode 107 after forming the amorphous layer 101 on the silicon substrate 100.

(Third Embodiment)

Hereinafter, a method for manufacturing a semiconductor device according to the third embodiment of the present invention will be described with reference to the drawings.

FIGS. 4 (a) to 4 (c) and FIGS. 5 (a) to 5 (c) are cross-sectional views schematically showing steps of a method for manufacturing a semiconductor device according to the third embodiment.

First, as shown in FIG. 4A, a gate electrode 107 having a polysilicon force is formed on an n-type silicon substrate 100 as a semiconductor region via a gate insulating film 106. This may be formed, for example, using a known lithography technique and etching technique!

Next, ions of, for example, germanium or silicon are implanted into regions on both sides of the gate electrode 107 in the silicon substrate 100, and the surface of the silicon substrate 100 has an amorphous layer having a thickness up to the first depth. Form 101. The thickness of the amorphous layer 101 refers to the thickness from the surface of the silicon substrate 100 to the lower surface of the amorphous layer 101.

Here, the first depth is set at a position deeper than various pn junctions necessary for forming a transistor by adjusting the ion implantation energy. The [0095] Specifically, for example, Germa - a Yuumu, when and implanted at a dose of 3 X 10 ¹⁴ / cm ² at an implantation energy 60 keV, the first depth is about 80nm, and this depth, It is deeper than the pn junction such as the drain extension and the narrow region that will be formed later.

[0096] When forming the amorphous layer 101, a defect 103 is generated near the interface between the crystalline region of the silicon substrate 100 and the amorphous layer 101 (the interface exists at the first depth). .

Next, as shown in FIG. 4B, a silicon oxide film is deposited on both sides of the gate electrode 107 by low-pressure CVD to form an insulating sidewall 110. Since this step involves a heat treatment performed at about 550 ° C., the amorphous layer 101 is formed in the region from the first depth to any second depth shallower than the first depth simultaneously with the formation of the sidewall 110. The crystal structure recovers. As a result, in the amorphous layer 101, the surface force of the silicon substrate 100 is also reduced to the region at the second depth. Here, in the present embodiment, the second depth is not less than 15 nm and not more than 30 nm.

When the crystal structure of the amorphous layer 101 is recovered, the position of the defect 103 does not change and remains at the first depth.

Next, as shown in FIG. 4 (c), boron and other impurities such as boron or the like using the gate electrode 107 and the side wall 110 as a mask are formed in the region of the amorphous layer 101 on both sides of the gate electrode 107 and the side wall 110. Inject. As a result, a p-type drain extension 108 that partially enters below the gate electrode 107 is formed as a first impurity layer. In this case, for example, the angle with respect to the normal line of the substrate surface is set to 25 degrees, the implantation energy is set to lkeV or less, and the dose is set to 1 × 10 ¹⁴ Zcm ² . The drain extension 108 is formed to a depth of 5 nm or more and 15 nm or less.

[0100] Since boron or the like is implanted into the amorphous layer 101, the phenomenon of channeling can be suppressed, so that boron does not enter deep portions of the silicon substrate 100. For this reason, the drain extension 108 is formed in a region sufficiently shallower than the second depth.

[0101] In this manner, a pn junction is formed at the boundary between the p-type drain extension 108 and the n-type silicon substrate 100, and the pn junction is formed at a second depth shallower than the first depth. Compared At a shallow position. For this reason, the pn junction is sufficiently separated from the defect force existing at the first depth, so that the connection leakage current caused by the defect 103 can be suppressed.

Next, as shown in FIG. 5 (a), using the gate electrode 107 and the sidewall 110 as a mask, an angle with respect to a normal, for example, in the region on both sides of the gate electrode 107 and the sidewall 110 in the silicon substrate 100 Arsenic is ion-implanted under the conditions of 45 degrees and a dose of 5 × 10 ¹³ / cm ² .

[0103] In this manner, an n-type halo region 109 is formed as a second impurity layer so as to enter under the gate electrode 107 further than the drain extension 108 and surround the drain extension 108. However, the halo region 109 is formed to be located at a position shallower than the second depth.

In this manner, the pn junction between the n-type halo region 109 and the p-type drain extension 108 is also shallower than the first depth and further shallower than the second depth. It will be in place. For this reason, the pn junction is sufficiently separated from the defect 103 existing at the first depth, so that it is possible to prevent the occurrence of connection leakage current due to the defect 103.

Further, as shown in FIG. 5B, n-type impurity ions are implanted into regions on both sides of the gate electrode 107 and the sidewall 110 in the silicon substrate 100 using the gate electrode 107 and the sidewall 110 as a mask. . Thereby, the contact drain 111 is formed. The contact drain 111 has a higher impurity concentration than the drain extension 108 to reduce the contact resistance and has a depth smaller than the first depth (about 80 nm in the present embodiment), for example, about 60 nm. I do.

Next, an activation process for the impurity layers such as the drain extension 108, the halo region 109, and the contact drain 111 is performed. This uses low-temperature SPE technology. Specifically, the heat treatment is performed under the condition that the temperature is 500 ° C. or more and 800 ° C. or less and the processing time is 2 minutes or more and 3 minutes or less. However, the temperature range of 500 ° C. or more and 800 ° C. or less is a preferable condition, and is not limited to this. More preferably, the activation treatment is performed in a temperature range of 500 ° C. or more and 700 ° C. or less.

[0107] As a result, the amorphous layer 101 recovers the crystal structure, so that the amorphous region 101 does not exist in the silicon substrate 100, and the drain extension 108 and the halo region The impurity layers such as the region 109 and the contact drain 111 can be activated without the diffusion of impurities. The result is shown in FIG. 5 (c). Also, this heat treatment is comparatively long, for example, several minutes, unlike flash annealing or the like which performs processing in a short time. For this reason, even if the pattern formed on the silicon substrate 100 has non-uniformity such as the density difference of the gate electrode 107, a transistor having a characteristic without variation without being affected by the non-uniformity is required. Can be formed.

As described above, according to the present embodiment, the surface force of the silicon substrate 100 is initially formed by forming the amorphous layer 101 in the region up to the first depth, and then performing the heat treatment performed in the step of forming the sidewall 110. The crystal structure of the amorphous layer 101 is partially recovered, and the amorphous ′ crystal interface is retreated to a second depth shallower than the first depth. For this reason, the defect 103 existing at the first depth and the amorphous-crystal interface after the heat treatment at the second depth can be separated. Subsequently, when the drain extension 108 and the halo region 109 are formed inside the amorphous layer 101 by performing ion implantation on the amorphous layer 101, the respective pn junctions and the defects 103 can be sufficiently separated.

[0109] From the above, it is possible to suppress the junction leak current that occurs when the defect 103 and the pn junction are close to each other. By utilizing this, it is possible to manufacture a semiconductor device in which the pattern dependence is suppressed by the low-temperature SPE technique and the junction leak current is suppressed by the effect of the present invention.

Furthermore, in the present embodiment, the heat treatment performed in the step of forming the sidewalls 110 simultaneously performs the processing of restoring the crystal structure of the amorphous layer 101 in the region from the first depth to the second depth. Do. For this reason, the number of steps can be reduced.

[0111] In a fine transistor having a gate size smaller than, for example, about 90 nm, it is preferable to form the halo region 109 as the second impurity layer. The halo region 109 is not an essential element of the present embodiment, and may be formed as necessary!

[0112] The first depth, the second depth, and the depth of the drain extension 108 described in the present embodiment are all preferable values of the force. It should be set. The ion implantation conditions (implantation energy, implantation angle, dose amount, and the like) in the formation of the amorphous layer 101 and the formation of the drain extension 108, the halo region 109, and the contact drain 111 are shown in this embodiment. Is a preferable condition for each of the above values. The present invention is not limited to these.

In the present embodiment, the amorphous layer 101 is formed after forming the gate electrode 107 on the silicon substrate 100. The order may be reversed to form the gate electrode 107 after forming the amorphous layer 101 on the silicon substrate 100.

In the present embodiment, ions are introduced into the amorphous layer 101 by ion implantation by a method other than ion implantation, for example, plasma doping.

Industrial applicability

The method of manufacturing a semiconductor device according to the present invention has an effect that the position of a defect generated at the time of forming an amorphous layer and the position of a pn junction at the time of forming an impurity layer are sufficiently separated. This effect can be used to suppress junction leakage current caused by defects. At the same time, low-temperature SPE technology can be used to form shallow drain extensions uniformly regardless of the pattern formed on the semiconductor region.

Claims

The scope of the claims

[1] a step of forming an amorphous layer in a region up to a first depth in a semiconductor region;

By performing a heat treatment on the amorphous layer at a predetermined temperature, a crystal structure of the amorphous layer in a region from the first depth to a second depth shallower than the first depth is formed. Recovering, thereby retracting the amorphous layer to the second depth;

Forming a pn junction at a shallower depth than the second depth and at a third depth by introducing ions into the amorphous layer that has been subjected to the heat treatment. Device manufacturing method.

[2] The method for manufacturing a semiconductor device according to claim 1!

The predetermined temperature is not less than 475 ° C and not more than 600 ° C.

[3] The method for manufacturing a semiconductor device according to claim 1, wherein

The third depth is not less than 5 nm and not more than 15 nm.

[4] The method for manufacturing a semiconductor device according to claim 1, wherein:

The pattern of the gate electrode formed on the semiconductor region is unevenly distributed on the semiconductor region.

[5] a step of forming an amorphous layer in a region up to a first depth of the surface force in the semiconductor region of the first conductivity type;

Forming a first impurity layer of a second conductivity type having a pn junction at a third depth shallower than the second depth by introducing ions into the amorphous layer subjected to the heat treatment; When,

Performing a step of performing an activation treatment on the first impurity layer.

[6] In the method for manufacturing a semiconductor device according to claim 5,

The third depth is not less than 5 nm and not more than 15 nm.

[7] The method for manufacturing a semiconductor device according to claim 5,

The predetermined temperature is not less than 475 ° C and not more than 600 ° C,

The activation treatment of the first impurity layer is performed in a temperature range of 500 ° C. or more and 700 ° C. or less.

[8] In the method for manufacturing a semiconductor device according to claim 5,

[9] forming a gate electrode on the semiconductor region of the first conductivity type;

Forming an amorphous layer in a region up to a first depth of the surface force in the semiconductor region of the first conductivity type;

By introducing ions into the amorphous layer subjected to the heat treatment, a second impurity layer of a first conductivity type having a pn junction at a position shallower than the first depth and deeper than the third depth Forming a;

Performing an activation process on the first impurity layer and the second impurity layer.

[10] The method of manufacturing a semiconductor device according to claim 9,

The third depth is not less than 5 nm and not more than 15 nm.

[11] The method of manufacturing a semiconductor device according to claim 9,

The predetermined temperature is not less than 475 ° C and not more than 600 ° C, The activation process of the first impurity layer and the second impurity layer is performed in a temperature range of 500 ° C. or more and 700 ° C. or less.

[12] The method for manufacturing a semiconductor device according to claim 9,

[13] a step of forming a gate electrode on the semiconductor region of the first conductivity type;

Forming an amorphous layer in a region up to a first depth of the surface force in the semiconductor region;

At the same time as forming an insulating sidewall on the side surface of the gate electrode, a heat treatment at a predetermined temperature performed at the time of forming the sidewall causes the amorphous layer to have the first depth to the first depth. Recovering the crystal structure in a region up to a second depth shallower, thereby retracting the amorphous layer to the second depth;

By introducing ions into the regions on both sides of the gate electrode in the amorphous layer subjected to the heat treatment, the amorphous layer has a pn junction at a third depth shallower than the second depth and is of the second conductivity type. Forming a first impurity layer;

Performing a step of activating the first impurity layer. A method of manufacturing a semiconductor device, comprising:

[14] The method for manufacturing a semiconductor device according to claim 13,

After the step of forming the first impurity layer, ions are introduced into regions on both sides of the gate electrode in the amorphous layer, so that a position shallower than the first depth and deeper than the third depth. Forming a second impurity layer of a first conductivity type having a pn junction at

In the step of performing the activation of the first impurity layer, the activation of the second impurity layer is performed simultaneously.

[15] The method of manufacturing a semiconductor device according to claim 13,

The depth of the first impurity layer is not less than 5 nm and not more than 15 nm.

[16] The method of manufacturing a semiconductor device according to claim 13, The predetermined temperature is 475 ° C or more and 600 ° C or less, and the activation treatment is performed in a temperature range of 500 ° C or more and 700 ° C or less. The method for manufacturing a semiconductor device according to claim 13,