WO2005091345A8 - カーボンナノチューブ含有金属薄膜 - Google Patents

カーボンナノチューブ含有金属薄膜

Info

Publication number
WO2005091345A8
WO2005091345A8 PCT/JP2005/004938 JP2005004938W WO2005091345A8 WO 2005091345 A8 WO2005091345 A8 WO 2005091345A8 JP 2005004938 W JP2005004938 W JP 2005004938W WO 2005091345 A8 WO2005091345 A8 WO 2005091345A8
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
carbon nanotube
metal thin
containing metal
substrate
Prior art date
Application number
PCT/JP2005/004938
Other languages
English (en)
French (fr)
Other versions
WO2005091345A1 (ja
Inventor
Kenzo Maehashi
Kazuhiko Matsumoto
Yasuhide Ohno
Koichi Inoue
Original Assignee
Japan Science & Tech Agency
Kenzo Maehashi
Kazuhiko Matsumoto
Yasuhide Ohno
Koichi Inoue
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science & Tech Agency, Kenzo Maehashi, Kazuhiko Matsumoto, Yasuhide Ohno, Koichi Inoue filed Critical Japan Science & Tech Agency
Publication of WO2005091345A1 publication Critical patent/WO2005091345A1/ja
Publication of WO2005091345A8 publication Critical patent/WO2005091345A8/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/06—Multi-walled nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　単層カーボンナノチューブを形成した基板上に銅をメッキすることで、基板上に単層カーボンナノチューブを取り込んだ銅薄膜を形成する。所定の金属を用いて、その金属のみからなる金属薄膜より性能の高い金属薄膜を提供することができる。
PCT/JP2005/004938 2004-03-24 2005-03-18 カーボンナノチューブ含有金属薄膜 WO2005091345A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-088051 2004-03-24
JP2004088051A JP2005277096A (ja) 2004-03-24 2004-03-24 カーボンナノチューブ含有金属膜を用いてなる半導体配線とその製造方法、およびカーボンナノチューブ含有金属膜の製造方法

Publications (2)

Publication Number Publication Date
WO2005091345A1 WO2005091345A1 (ja) 2005-09-29
WO2005091345A8 true WO2005091345A8 (ja) 2006-07-20

Family

ID=34993962

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2005/004938 WO2005091345A1 (ja) 2004-03-24 2005-03-18 カーボンナノチューブ含有金属薄膜

Country Status (2)

Country Link
JP (1) JP2005277096A (ja)
WO (1) WO2005091345A1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4999072B2 (ja) * 2007-03-22 2012-08-15 古河電気工業株式会社 表面被覆材
KR100925189B1 (ko) * 2007-07-09 2009-11-06 삼성전기주식회사 방열 인쇄회로기판 및 그 제조방법
KR101022857B1 (ko) * 2008-01-16 2011-03-17 인하대학교 산학협력단 수소저장용 전이금속 도금된 다공성 탄소나노섬유 복합체의제조방법
JP2010027916A (ja) * 2008-07-22 2010-02-04 Meiko:Kk プリント配線板
JP2010180454A (ja) * 2009-02-05 2010-08-19 Hitachi Cable Ltd 表面処理銅箔およびその製造方法ならびに銅張積層板
WO2012091139A1 (ja) * 2010-12-28 2012-07-05 独立行政法人産業技術総合研究所 Ｃｎｔ金属複合材及びその製造方法
US9704793B2 (en) 2011-01-04 2017-07-11 Napra Co., Ltd. Substrate for electronic device and electronic device
US9324634B2 (en) 2011-11-08 2016-04-26 International Business Machines Corporation Semiconductor interconnect structure having a graphene-based barrier metal layer
US8865604B2 (en) * 2012-09-17 2014-10-21 The Boeing Company Bulk carbon nanotube and metallic composites and method of fabricating
JP6118540B2 (ja) * 2012-11-08 2017-04-19 新光電気工業株式会社 放熱部品及びその製造方法
JP6286852B2 (ja) * 2013-04-01 2018-03-07 日立化成株式会社 導電粒子、異方導電性接着剤及び導電粒子の製造方法
JP6112639B2 (ja) * 2013-07-22 2017-04-12 国立研究開発法人産業技術総合研究所 Ｃｎｔ金属複合材及びその製造方法
JP6483616B2 (ja) * 2013-10-08 2019-03-13 日本ゼオン株式会社 金属複合材料の製造方法
JP6606076B2 (ja) * 2014-07-23 2019-11-13 日本ゼオン株式会社 めっき液およびその製造方法、並びに、複合材料、銅複合材料およびその製造方法
WO2017033482A1 (ja) * 2015-08-24 2017-03-02 古河電気工業株式会社 カーボンナノチューブ集合体、カーボンナノチューブ複合材料及びカーボンナノチューブ線材
LU100919B1 (en) * 2018-08-27 2020-02-27 Luxembourg Inst Science & Tech List Metal-CNT composite, production method and materials therefor
JP7513642B2 (ja) 2022-01-11 2024-07-09 矢崎総業株式会社 カーボンナノチューブ複合配線及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3730476B2 (ja) * 2000-03-31 2006-01-05 株式会社東芝 電界放出型冷陰極及びその製造方法
TW502282B (en) * 2001-06-01 2002-09-11 Delta Optoelectronics Inc Manufacture method of emitter of field emission display
JP4304921B2 (ja) * 2002-06-07 2009-07-29 住友電気工業株式会社 高熱伝導性放熱材料及びその製造方法
JP2004076031A (ja) * 2002-08-09 2004-03-11 Ishikawajima Harima Heavy Ind Co Ltd 電解めっき用めっき浴及び複合めっき用めっき浴並びにこれらの製造方法
JP2004076044A (ja) * 2002-08-12 2004-03-11 Sumitomo Electric Ind Ltd セラミックス−金属系複合材料及びその製造方法
JP4032116B2 (ja) * 2002-11-01 2008-01-16 国立大学法人信州大学 電子部品およびその製造方法
JP4683188B2 (ja) * 2002-11-29 2011-05-11 日本電気株式会社 半導体装置およびその製造方法
JP4689218B2 (ja) * 2003-09-12 2011-05-25 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2005277096A (ja) 2005-10-06
WO2005091345A1 (ja) 2005-09-29

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