WO2005046046A1 - Oscillateur a quartz - Google Patents

Oscillateur a quartz Download PDF

Info

Publication number
WO2005046046A1
WO2005046046A1 PCT/JP2004/014964 JP2004014964W WO2005046046A1 WO 2005046046 A1 WO2005046046 A1 WO 2005046046A1 JP 2004014964 W JP2004014964 W JP 2004014964W WO 2005046046 A1 WO2005046046 A1 WO 2005046046A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
variable capacitance
mos
control
crystal oscillator
Prior art date
Application number
PCT/JP2004/014964
Other languages
English (en)
Japanese (ja)
Inventor
Takehiro Yamamoto
Original Assignee
Toyo Communication Equipment Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co., Ltd. filed Critical Toyo Communication Equipment Co., Ltd.
Publication of WO2005046046A1 publication Critical patent/WO2005046046A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current

Definitions

  • the present invention relates to a crystal oscillator, and more particularly to a voltage-controlled crystal oscillator whose oscillation frequency changes based on a control DC voltage value supplied by an external force, and a voltage-controlled temperature-compensated crystal oscillator.
  • a PLL Phase Lock Loop
  • a crystal oscillator As the voltage controlled oscillator.
  • Patent Document 1 discloses a voltage-controlled crystal oscillator configured using an inverter element.
  • the voltage controlled crystal oscillator utilizes a phenomenon in which the resonance frequency of the oscillator changes by changing the load capacitance of the resonance loop.
  • a voltage variable capacitance element is inserted into a resonance loop of a crystal oscillator using an inverter element, and the frequency output from the oscillator is controlled by a control DC voltage applied to the voltage variable capacitance element.
  • variable capacitance diode is known as a general voltage variable capacitance element.
  • the variable capacitance diode is difficult to be integrated, it cannot be integrated with other components constituting the oscillation circuit, thereby hindering miniaturization and cost reduction.
  • Patent Document 2 there is a MOS voltage variable capacitance element as a voltage variable capacitance element, which is being applied to a crystal oscillator because of easy integration.
  • FIG. 6 shows a voltage-controlled temperature-compensated crystal oscillator obtained by adding a temperature compensation circuit using a MOS-type voltage variable capacitance element and a frequency adjustment circuit using a MOS-type voltage variable capacitance element to a crystal oscillator using an inverter element.
  • FIG. 3 is a circuit diagram illustrating an example of the embodiment.
  • 1 is a crystal oscillator
  • R1 is a feedback resistor
  • 2 is an inverter element
  • 3 in a broken line
  • 4 in a dashed line
  • the frequency adjustment circuit 4 is composed of two MOS type voltage variable capacitance elements Dl and D2 and two Capacitor CI, C2 and resistors R2, R3.
  • MOS voltage variable capacitance element D1 The gate terminal of MOS voltage variable capacitance element D1 is connected to the input terminal of inverter element 2 via capacitor C1, and the gate terminal of MOS voltage variable capacitance element D2 is connected to the output terminal of inverter element 2 via capacitor C2. A knock gate terminal of each MOS-type voltage variable capacitance element is grounded. Then, an external control voltage is supplied to the connection point between the gate terminal of each MOS type voltage variable capacitor and the capacitor via the resistors R2 and R3.
  • Fig. 7 shows the relationship between the gate voltage and the capacitance (CV characteristic) of a MOS type voltage variable capacitance element, in which the capacitance value of the MOS type voltage variable capacitance element changes by changing the gate voltage. become. Since this MOS type voltage variable capacitance element forms a part of the load capacitance in the resonance loop of the oscillator, it is possible to obtain a frequency change according to the external control voltage based on the principle described above. .
  • Patent document 1 Japanese Patent Application Laid-Open No. 2002-026660
  • Patent Document 2 JP-A-11-088052
  • the area where the CV characteristic changes linearly is very small, and on both sides of this area, the change in capacitance with respect to the change in gate voltage gradually decreases, and the curve changes.
  • the capacitance value does not change, but when it reaches the (saturated) region, it has a characteristic.
  • the present invention provides a frequency adjustment circuit including at least an inverter element, a crystal oscillator, and first and second MOS voltage variable capacitance elements, and the first and second MOS transistors.
  • a first and a second level shift circuit for respectively shifting the level of the control DC voltage supplied to the back gate terminal of the type voltage variable capacitance element, wherein the gate of the first MOS type voltage variable capacitance element A terminal is connected to an input terminal side of the inverter element, and a gate terminal of the second MOS type voltage variable capacitance element is connected to an output terminal side of the inverter element, respectively.
  • a DC bias voltage is applied to one of the gate terminals, and each back gate terminal of the first and second MOS voltage variable capacitance elements is grounded via a capacitor.
  • a control DC voltage is supplied via a second level shift circuit, and one of the first and second level shift circuits responds in an area lower than the center voltage of the control DC voltage.
  • the first and second M The voltage shift amount is set so that the CV characteristic of the OS type voltage variable capacitance element operates in a linear region, and the other of the first and second level shift circuits is used to control the DC voltage of the control.
  • the voltage shift amount is set so that the CV characteristics of the first and second MOS voltage variable capacitors corresponding to the region higher than the center voltage operate in a region where the CV characteristic is linear. Things.
  • the invention according to claim 2 is characterized by further comprising a temperature compensating circuit constituted by using a MOS type voltage variable capacitance element.
  • the invention according to claim 3 is characterized in that the DC bias voltage is used as a reference voltage for both the temperature compensation circuit and the frequency adjustment circuit.
  • the minimum value of the control DC voltage is V, and the maximum value is V.
  • the center voltage is V, and the capacitances of the first and second MOS type voltage variable capacitors are linear center.
  • the lower limit value of the gate voltage that changes periodically and V is the upper limit value.
  • V Z2 the DC bias voltage is V, the DC bias is applied.
  • the control DC voltage is V Outputs the voltage that changes from V / 2-V to V / 2-V when changing to V center max DD GB2 DD GB 1
  • Min center ref GB2 ref Bl so that the other level shift circuit outputs a voltage that changes from V -V to V -V when the control DC voltage changes from V to V. It is characterized by being set to.
  • the control voltage supplied from the outside is separately supplied to each MOS type voltage variable capacitance element via the level shift circuit.
  • FIG. 1 is a circuit diagram showing an embodiment of a crystal oscillator according to the present invention, and portions common to those in the circuit diagram shown in FIG.
  • a feature of the present invention which is different from the conventional circuit shown in FIG. That is, the gate terminal of the MOS-type voltage variable capacitance element D1, which is the first MOS-type voltage variable capacitance element, is connected to the input terminal of the inverter element, and the MOS-type voltage variable capacitance element, which is the second MOS-type voltage variable capacitance element.
  • the gate terminal of element D2 is arranged on the output end side of the inverter element via DC cut capacitor Cc, and the back gate terminals of MOS voltage variable capacitance elements D1 and D2 are grounded via capacitors Ca and Cb, respectively.
  • the control voltage is supplied to the back gate terminals of the MOS voltage variable capacitance elements Dl and D2 via the level shift circuits 6 and 7, which are the first and second level shift circuits, respectively. It is.
  • a DC bias V is applied to the gate terminal of the MOS type voltage variable capacitance element D2.
  • This DC bias V also functions as a reference voltage source for the temperature compensation circuit 3.
  • a gain adjuster 8 for adjusting the voltage value (oscillation width) of the control DC voltage may be inserted before the level shift circuits 6 and 7.
  • Fig. 2 is a diagram showing the CV characteristics of a MOS type voltage variable capacitance element. As shown in the figure, the lower limit of the gate voltage exhibiting a region with excellent linearity is defined as V, and the upper limit is defined as V.
  • V and min max center are defined as V and min max center, respectively.
  • the threshold value of the inverter element 2 is defined as V Z2.
  • FIG. 3 is a diagram showing a relationship between a control DC voltage supplied from an external force and voltages VC1 and VC2 supplied from the level shift circuits 6 and 7 to the MOS type voltage variable capacitance elements Dl and D2.
  • FIG. 4 is a diagram showing a relationship between a control DC voltage supplied from the outside and a gate voltage of a MOS voltage variable capacitance element.
  • V-V is controlled by the MOS voltage variable capacitance element D2 to output a voltage that changes to ref GB1
  • the level shift circuit that supplies the control voltage is set to output a voltage that changes from (V / 2-V) to (V / 2-V) when the control DC voltage changes to the V force V at the center max.
  • the present invention provides that one of the level shift circuits operates one MOS type voltage variable capacitance element in an area where the CV characteristic is linear in an area lower than the center voltage of the control DC voltage, and the other operates such that
  • the level shift circuit is characterized in that the voltage shift amount is set such that the other MOS type voltage variable capacitance element operates in a region where the CV characteristic is linear in a region higher than the center voltage of the control DC voltage. Is what you do.
  • the present invention may be applied to a voltage-controlled crystal oscillator in which the temperature compensation circuit is omitted.
  • FIG. 1 is a circuit diagram showing an embodiment of a crystal oscillator according to the present invention.
  • FIG. 2 is a view showing CV characteristics of a MOS type voltage variable capacitance element.
  • FIG. 3 is a diagram showing a relationship between a control DC voltage and a voltage supplied to a level shift circuit.
  • FIG. 4 is a diagram showing a relationship between a control DC voltage and a gate voltage of a MOS type voltage variable capacitor.
  • FIG. 5 is a diagram showing a relationship between a control voltage and a frequency variable amount.
  • FIG. 6 is a circuit diagram showing an embodiment of a conventional crystal oscillator.
  • FIG. 7 is a view showing CV characteristics of a MOS voltage variable capacitance element.

Landscapes

  • Oscillators With Electromechanical Resonators (AREA)

Abstract

La présente invention concerne un oscillateur à quartz qui présente une valeur de variation de fréquence d'oscillateur accrue conformément à une tension de commande délivrée de manière externe et qui fournit une variation de fréquence présentant une linéarité améliorée. Cet oscillateur à quartz inclut un circuit de réglage de la fréquence conçu au moyen de deux éléments MOS à capacité variant en fonction de la tension. La borne de grille arrière de chaque élément MOS à capacité variant en fonction de la tension reçoit une tension CC de commande par l'intermédiaire d'un circuit respectif d'un ensemble de circuits de décalage de niveau. La valeur du décalage de tension d'un de ces circuits de décalage de niveau est établie de sorte que l'élément MOS à capacité variant en fonction de la tension fonctionne dans une plage où la caractéristique C-V est linéaire, dans une plage inférieure à la tension centrale de la tension CC de commande. La valeur du décalage de tension de l'autre circuit de décalage de niveau est établie de sorte que l'élément MOS correspondant à capacité variant en fonction de la tension fonctionne dans une plage où la caractéristique C-V est linéaire, dans une plage supérieure à la tension centrale de la tension CC de commande.
PCT/JP2004/014964 2003-11-10 2004-10-08 Oscillateur a quartz WO2005046046A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-380479 2003-11-10
JP2003380479A JP2007019565A (ja) 2003-11-10 2003-11-10 水晶発振器

Publications (1)

Publication Number Publication Date
WO2005046046A1 true WO2005046046A1 (fr) 2005-05-19

Family

ID=34567238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/014964 WO2005046046A1 (fr) 2003-11-10 2004-10-08 Oscillateur a quartz

Country Status (2)

Country Link
JP (1) JP2007019565A (fr)
WO (1) WO2005046046A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007069455A1 (fr) 2005-12-15 2007-06-21 Asahi Kasei Emd Corporation Oscillateur commandé en tension
CN101110565B (zh) * 2007-06-28 2010-04-14 安徽蓝盾光电子股份有限公司 车辆信息采集雷达压控震荡器线性度矫正装置
US9065383B2 (en) 2012-09-28 2015-06-23 Seiko Epson Corporation Oscillation circuit, semiconductor integrated circuit device, vibrating device, electronic apparatus, and moving object
US9106237B2 (en) 2012-09-28 2015-08-11 Seiko Epson Corporation Oscillation circuit, electronic apparatus, and moving object
US9252789B2 (en) 2012-09-28 2016-02-02 Seiko Epson Corporation Oscillator circuit, vibratory device, electronic apparatus, moving object, method of adjusting vibratory device, and sensitivity adjustment circuit

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645826A (ja) * 1992-04-20 1994-02-18 Nec Corp 電圧制御発振器
WO1996003799A1 (fr) * 1994-07-27 1996-02-08 Citizen Watch Co., Ltd. Oscillateur a quartz du type a compensation de temperature
JPH1051238A (ja) * 1996-07-30 1998-02-20 Asahi Kasei Micro Syst Kk 電圧制御発振器
JPH10303643A (ja) * 1997-04-23 1998-11-13 Oki Electric Ind Co Ltd 電圧制御発振回路
JP2000353918A (ja) * 1999-04-07 2000-12-19 Toyo Commun Equip Co Ltd 圧電発振器
JP2001352218A (ja) * 2000-06-09 2001-12-21 Nippon Telegr & Teleph Corp <Ntt> 電圧制御発振器
JP2002043842A (ja) * 2000-07-26 2002-02-08 Oki Electric Ind Co Ltd Ｌｃ共振回路及び電圧制御型発振回路
JP2002135051A (ja) * 2000-10-30 2002-05-10 Toyo Commun Equip Co Ltd 圧電発振器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645826A (ja) * 1992-04-20 1994-02-18 Nec Corp 電圧制御発振器
WO1996003799A1 (fr) * 1994-07-27 1996-02-08 Citizen Watch Co., Ltd. Oscillateur a quartz du type a compensation de temperature
JPH1051238A (ja) * 1996-07-30 1998-02-20 Asahi Kasei Micro Syst Kk 電圧制御発振器
JPH10303643A (ja) * 1997-04-23 1998-11-13 Oki Electric Ind Co Ltd 電圧制御発振回路
JP2000353918A (ja) * 1999-04-07 2000-12-19 Toyo Commun Equip Co Ltd 圧電発振器
JP2001352218A (ja) * 2000-06-09 2001-12-21 Nippon Telegr & Teleph Corp <Ntt> 電圧制御発振器
JP2002043842A (ja) * 2000-07-26 2002-02-08 Oki Electric Ind Co Ltd Ｌｃ共振回路及び電圧制御型発振回路
JP2002135051A (ja) * 2000-10-30 2002-05-10 Toyo Commun Equip Co Ltd 圧電発振器

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007069455A1 (fr) 2005-12-15 2007-06-21 Asahi Kasei Emd Corporation Oscillateur commandé en tension
EP1858156A1 (fr) * 2005-12-15 2007-11-21 Asahi Kasei EMD Corporation Oscillateur commandé en tension
EP1858156A4 (fr) * 2005-12-15 2010-01-20 Asahi Kasei Emd Corp Oscillateur commandé en tension
US7675377B2 (en) * 2005-12-15 2010-03-09 Asahi Kasei Emd Corporation Voltage controlled oscillator
CN101133549B (zh) * 2005-12-15 2011-03-23 旭化成电子材料元件株式会社 电压控制振荡器、其设计方法及其控制电压的生成施加方法
EP2482447A1 (fr) * 2005-12-15 2012-08-01 Asahi Kasei EMD Corporation Oscillateur commandé en tension
CN101110565B (zh) * 2007-06-28 2010-04-14 安徽蓝盾光电子股份有限公司 车辆信息采集雷达压控震荡器线性度矫正装置
US9065383B2 (en) 2012-09-28 2015-06-23 Seiko Epson Corporation Oscillation circuit, semiconductor integrated circuit device, vibrating device, electronic apparatus, and moving object
US9106237B2 (en) 2012-09-28 2015-08-11 Seiko Epson Corporation Oscillation circuit, electronic apparatus, and moving object
US9252789B2 (en) 2012-09-28 2016-02-02 Seiko Epson Corporation Oscillator circuit, vibratory device, electronic apparatus, moving object, method of adjusting vibratory device, and sensitivity adjustment circuit

Also Published As

Publication number Publication date
JP2007019565A (ja) 2007-01-25

Similar Documents

Publication Publication Date Title
US7474166B2 (en) PLL frequency synthesizer circuit and frequency tuning method thereof
US20100013567A1 (en) Switching capacitor generation circuit
JP4089938B2 (ja) 電圧制御発振器
TWI426701B (zh) 電感與電容為基礎的時脈產生器及時序／頻率參考器
US7183867B2 (en) Voltage controlled variable capacitor
US20080012654A1 (en) Linearized variable-capacitance module and lc resonance circuit using the same
US7675374B2 (en) Voltage controlled oscillator with switching bias
WO2007072551A1 (fr) Oscillateur en anneau commande par tension
EP1608060A1 (fr) Oscillateur CMOS avec un circuit résonnant LC
US7369008B2 (en) MOS varactor and voltage-controlled oscillator using the same
JP3921362B2 (ja) 温度補償水晶発振器
US7268636B2 (en) Voltage controlled oscillator
US6734747B1 (en) Piezoelectric oscillator
US8217728B2 (en) LC voltage-controlled oscillator
JP2006279524A (ja) 可変容量回路および可変容量回路の制御方法
US6819193B2 (en) Method and circuitry for implementing a differentially tuned varactor-inductor oscillator
US7362190B2 (en) Oscillator circuit with high pass filter and low pass filter in output stage
WO2005046046A1 (fr) Oscillateur a quartz
US7944318B2 (en) Voltage controlled oscillator, and PLL circuit and radio communication device each including the same
JPH1051238A (ja) 電圧制御発振器
WO2021205695A1 (fr) Élément à capacité variable et oscillateur le comprenant
JP2015171017A (ja) 回路、電圧制御発振器および発振周波数制御システム
US7394329B2 (en) Analog varactor
US20010035797A1 (en) Method and circuitry for implementing a differentially tuned varactor-inductor oscillator
US20190020330A1 (en) Variable capacitance circuit, oscillator circuit, and method of controlling variable capacitance circuit

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP