WO2005045948A2 - Oled structures with strain relief, antireflection and barrier layers - Google Patents
Oled structures with strain relief, antireflection and barrier layers Download PDFInfo
- Publication number
- WO2005045948A2 WO2005045948A2 PCT/US2004/035814 US2004035814W WO2005045948A2 WO 2005045948 A2 WO2005045948 A2 WO 2005045948A2 US 2004035814 W US2004035814 W US 2004035814W WO 2005045948 A2 WO2005045948 A2 WO 2005045948A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- recited
- oled
- oled structure
- barrier
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 230000002209 hydrophobic effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 description 31
- 238000000576 coating method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 21
- 239000000356 contaminant Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 206010052128 Glare Diseases 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010030924 Optic ischaemic neuropathy Diseases 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical group 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Definitions
- OLEDs are light emitting devices that are often made from electroluminescent polymers and small-molecule structures. These devices have received a great deal of attention as alternatives to conventional light sources in displays and other applications.
- OLED-based displays may be an alternative to liquid crystal (LC) displays, because the LC materials and structures tend to be more complicated in form and more limited in application.
- LC liquid crystal
- OLED-based displays do not require a light source (backlight) as needed in LC displays.
- backlight light source
- OLEDs are a self-contained light source, and thus are much more compact than their LC counterparts.
- OLED-based displays remain visible under a wider range of conditions.
- OLED-based displays can be flexible. While OLEDs provide a light source for displays and other applications with at least the benefits referenced above, there are certain considerations and limitations that have thus far reduced their ubiquitous implementation.
- One drawback of OLED materials and devices is their susceptibility to environmental contamination. In particular, exposure of an OLED display to water vapor or oxygen can be deleterious to the organic material and the structural components of the OLED. As to the former, the exposure to water vapor and oxygen can reduce the light emitting capability of the organic electroluminescent material itself.
- an OLED structure includes a substantially flexible substrate, at least one barrier layer disposed between the substrate and the OLED structure, and at least one antireflection layer disposed between the OLED structure and a display surface.
- Fig. 1 is a partially exploded view an OLED structure in accordance with an example embodiment.
- Fig. 2a is a cross-sectional view of a barrier/anti reflection coating/rear reflection structure in accordance with an example embodiment.
- FIG. 2 b is a cross-sectional view of a barrier/antireflection coating/rear reflection structure in accordance with an example embodiment.
- Fig. 3 is a cross-sectional view of an antireflection coating structure at the front (viewing) side of the substrate in accordance with an example embodiment.
- Fig. 4 is a graphical representation of the reflectance versus wavelength of a three-layer antireflection stack in accordance with an example embodiment.
- Fig. 5 is a graphical representation of the reflectance versus wavelength of a three-layer antireflection stack in accordance with an example embodiment.
- Fig. 1 shows an OLED structure 100 in accordance with an example embodiment shown in a partially exploded view.
- the OLED structure 100 includes a substrate 10 1 that is beneficially transparent to visible light.
- the material chosen for the substrate provides the desired strength and scratch resistance at the viewing surface 106.
- the substrate 101 is illustratively a polymer material, such as plastic, or a suitable glass layer, or a combination of glass, polymers and other materials.
- the substrate 201 is a polymer
- the polymer may be polycarbonate, polyolefin, polyether sulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, and others.
- such polymer layers have a thickness on the order of approximately 50 ⁇ m to approximately 10 5 ⁇ m.
- the substrate may include a nanocomposite film, which provides a barrier to water vapor and oxygen that is disposed over a suitable material that provides flexibility.
- layers of these materials may be used in various and sundry combinations. Regardless of its composition, substrate 101 beneficially is flexible so the OLED structure can be flexible.
- the substrate 101 provides a base upon which the OLED devices may be disposed, and is flexible.
- the substrate itself may also be barrier to contaminants such as water vapor, or oxygen, or both, and prevents contaminants from reaching a layer 102 that includes the OLEDs.
- another layer(s) to prevent contamination maybe disposed over the substrate 101.
- an antireflection (AR) layer 107 acts as a barrier layer to contaminants.
- a layer 105 is disposed over layer
- Layer 102 is illustratively a multilayer structure that includes the OLEDs of the example embodiment.
- layer 102 is a three-layer stack comprised of an electron transport layer (ETL)/a light emission layer (EL)/a hole transport layer. These layers, which are not shown in Fig.2, are deposited by thermal evaporation or spin coating, and form the OLED layer of the OLED structure 100.
- ETL electron transport layer
- EL light emission layer
- Layer 102 may be of the type described in "Prospects and applications for organic light-emitting devices” to Burrows, et al. Current Opinion in Solid State and Materials Science 1997. The disclosure of this article is specifically incorporated herein by reference. Anode lines
- the cathode lines 104 are disposed on either side of the layer 102 to provide the necessary voltage to the OLEDs to effect illumination. These lines are generally metal, and are deposited by standard technique.
- the cathode lines 104 are illustratively comprised of a low work function metal for electron injection.
- the cathode lines may be Ca, Li, Mg or an alloy such as Mg/Ag, Al/Li or a multilayer material such as LiF/Al, Li 0/Al, CaF/Al structures.
- the anode lines 103 must be substantially transparent to visible light. Indium tin oxide (ITO) with a surface modified to provide a high work function is used in this capacity in the example embodiment.
- ITO Indium tin oxide
- ITO is a transparent conductive layer, which is coated on the substrate 101. ITO also injects holes to the EL layer via the HTL. This surface treatment can increase the work function, which results in a lower potential barrier to hole injection.
- packaging is an important to the longevity of OLED-based devices, which is particularly the case for OLED-based devices on flexible substrates.
- layer 105 is comprised of a plurality of thin metal layers and transparent dielectric layers that are disposed in an alternating or layered structure.
- the metal layers each have a thickness in the range of approximately 1 nm to approximately 1 OOnm, and the transparent dielectric layers each have a thickness of approximately lOnm to approximately 3 OOnm.
- one to ten stacks may be used to form layer 105, where as stack is one layer of dielectric and one layer of absorbing metal.
- the stress type of thin metal layers of the stacks of exemplary embodiments is modified to be either tensile or compressive to compensate stress of dielectric layers (usually compressive) of the stacks. Therefore, compressive stressed film/tensile stress film will cancel the stress and the display will not'curl.
- the thin metal films are ductile and the dielectric layers, which are acting as moisture barrier layers, are divided into several thin layers separated by thin metal layers.
- this structure is flexible and the moisture barrier layers will not break due to bending.
- Another useful aspect of the structure of the layer 105 is its anti-reflection property and its function as the back layer for a display device in which the OLED structure 10 1 functions.
- the laminated structure can only be put at the back side of the display, as the barrier/ AR layer at the viewing surface must be transparent to visible light.
- the layer 105 may be a stack including a quarter-wavelength dielectric layer, a reflective layer and a light absorbing layer.
- a layer of hydrophobic material (not shown in Fig.
- a suitable hydrophobic polymer may be disposed over rear-most surface of the layer 105, and a backside substrate (not shown) is disposed over the layer 105 or over the hydrophobic layer.
- the back substrate need not be transparent, and thus may be chosen for its flexibility and its ability to prevent contamination, without regard to its transparency to visible light.
- Such material include but are not limited to polymers, metals, glass and other materials within the knowledge of one of ordinary skill in the art.
- an AR layer 107 is disposed on the side of the substrate closest to the viewing side 106.
- the AR layer 107 beneficially prohibits the reflection of light incident on the viewing surface 106 (e.g., ambient light that impedes the viewing of the output of a display that includes the OLED structure 100 by the wash-out effect). To wit, light incident on the viewing surface from direction having components oriented opposite to the emission direction 108 of the OLEDs, is substantially prevented from being reflected at the viewing surface 106.
- the AR layer 107 may be a multilayer dielectric stack that provides a cancellation effect of the light incident on the viewing surface. This physical phenomenon is well-known, and requires the careful selection of the thicknesses, indices of refraction and number of layers of the dielectric stack.
- the dielectric layers of the AR layer 107 provide a suitable barrier to prevent contaminants such as water vapor and oxygen from traversing the substrate 101 and reaching the layer 102 or other layers.
- hermeticity at the viewing side 106 of the OLED structure is provided by the dielectric AR layer 107.
- the AR layer 107 serves as an antireflection layer to ambient light incident on the viewing surface 106.
- This AR layer 107 also provides flexibility, a barrier against oxygen and water vapor, and resistance to scratching.
- Layer 105 which is on the side of layer 102 opposite the viewing surface 106, provides the barrier against contaminants, most notably water vapor and oxygen.
- Layer 105 also provides a black or dark background for the viewing side 106 by reducing reflection of ambient or environmental light.
- layer 105 may include a light-absorbing layer, such as an antireflecting dielectric stack to provide this desired dark-background at the rear surface of the OLED structure 100.
- a black background is very important for a display to function in a bright ambient or background lighting. Glares and surface reflection may prevent you from viewing an image if viewing the display in bright background lighting such as sunlight.
- the dark or black background provides a sharp image with comparatively reduced glare.
- Fig. 2a shows a coating structure 200 for a rear layer 105 of the OLED structure 100 in accordance with an example embodiment.
- the coating structure 200 is a multi-layer structure 201 disposed on the 'back' side of the OLED device (e.g., on the side of layer 102 that is opposite to the side closest to the viewing surface 106.)
- This multilayer structure 201 includes at least one stack comprised of a light absorbing layer 202, and a transparent layer 203.
- the light absorbing layer is illustratively a metal
- the transparent layer 202 is a dielectric material. In the example embodiment there may be one stack and as many as ten stacks. It is further noted that a layer of dielectric 204 must be disposed between the first layer of metal in the multilayer structure 201 and the cathode lines of the OLED structure.
- a hydrophobic layer 205 may be disposed between the multi-layer structure and a rear or backside substrate 206.
- the hydrophobic layer 205 has a thickness in the range of approximately 10 nrn to approximately 300 pm. It is noted that oxygen is less damaging to the OLED devices than water vapor. However, an oxygen barrier is much more difficult to realize. Material structures with a short atomic separation/distance and a lower propensity for the migration of oxygen atoms are particularly useful in this capacity. Dense, pinhole free, amorphous structures (without crystallization) may be used.
- metal films may readily crystallize and a dielectric layer may form in a column structure; but with thin, and low temperature deposition (such as magnetron sputtering on cooled substrates), crystallization and column structures can be avoided.
- Such an oxygen barrier layer may be disposed between the rear substrate and the OLED device layer; for example between the hydrophobic layer 205 and the multilayer structure 201.
- the absorbing layers 202 are dark metal layers as referenced in connection with layer 105 of the example embodiment of Fig. 1. These layers foster the dark background desired and allow for an improved contrast at the view surface. Moreover, these layers reduce the stress on the substrates.
- the multilayer structure 201 performs this function, enabling the OLED structure to have excellent viewing contrast.
- Absorbing layers 202 are usefully chosen to absorb visible light.
- Suitable materials for the absorbing layers 204 include, but are not limited, to: thin metal coatings such as Mo, Zr, Ti, Y, Ta, Ni, and W; thin absorbing dielectric materials such as diamond-like carbon, SiOx, oxygen-deficient ln 2 0 3 , ITO, Sn0 2 , and similar materials; or semiconductor materials such as Si, Se, Ge, GaAs, GaN, Se, GaSe, GaTe, CdTe, TiC, TiN, ZnS, ZnO, CdSe, InP and BN.
- these layers are deposited by standard deposition techniques to a thickness in the range of 1.0 ⁇ m to approximately 100 ⁇ m, depending on the chosen material(s).
- the transparent layers 203 are usefully dielectric layers with thicknesses of approximately 20nm to approximately 300 n .
- Suitable materials include, but are not limited to A1 2 0 3 , AION, BaF 2 , BaTi0 3 , BeO, MgO, Gd0 3 , Nb 2 05, Th0 2 , Ce0 2 , Hf0 2 , Se 2 03, Si0 2 , Si 3 N4, Ti0 2 , Y 3 AI 15 0 12 , ZeSi04, Ta 2 0 5 , HfN, ZrN, SiC, Bi 12 Si0 20 . Depending on the material and wavelength these layers have a thickness in the range of 100 ⁇ m to approximately 300 ⁇ m.
- the example embodiments afford a reduced substrate curving due to the stress of the film stack.
- the stress induced can be substantially nullity.
- the metal of multilayer structure i.e., the light absorbing layers 202
- this warping of the polymer substrate may be prevented by coating each side of the polymer with a suitable inorganic material (e.g., glass) in order to nullify the stress.
- a suitable inorganic material e.g., glass
- the multilayer stack 208 comprises a dielectric layer having a thickness equal to a one-quarter wavelength at a chosen wavelength that is desirably absorbed/not reflected back toward the viewing surface.
- the stack also includes a reflective surface 210, which reflects the ambient light and a dark metal such as layer 203 above.
- the stack 208 functions as an oxygen and humidity barrier.
- the materials chosen for the multilayer stack for optical extinction also provide a barrier layer to prevent water vapor and oxygen from reaching the OLED structure.
- the stack 208 forms the 'dark' background of the OLED structure in a display.
- the multilayer stack 208 includes an optical interference structure that cancels light from direction 207 with the light reflected in the direction 212 from different interfaces of the multilayer structure. This reflected light has equal intensity and opposite phase by virtue of the structure if the stack 208.
- optical interference structures are well known in the physical optical arts and are often referred to as dielectric stack filters.
- the multilayer stack 208 may be of the type described in U.S. Patent 5,521,759, to Dobrowolski, et al, the disclosure of which is specifically incorporated herein by reference.
- the dark metal layer 211 is disposed at the far side of the multilayer stack as shown.
- the layer 210 has a thickness in the range of approximately 50 ⁇ m to approximately 200 ⁇ m, and also usefully suppresses reflections of ambient light back toward the viewing surface of the OLED structure. It is noted that if the embodiment of Fig. 2b is used, the dielectric layer 209 is usefully one-quarter wavelength thick at approximately 560 nrn (most sensitive wavelength region for human vision). This layer also provides a moisture barrier as well.
- Layer 210 is a metal that is usefully very light- absorbing, such as tungsten or inconel. Alternatively, oxygen deficient InSnOx, or ITO may be used as the light absorbing layer 210.
- stoichiometric ITO is a transparent semiconductor, although its transparency decreases greatly and conductivity increases significantly if oxygen vacancies are increased in the material.
- the layers described in connection with Figs. 2a and 2b may be formed at temperatures below 100 'C by known electron-beam, sputtering or web coating techniques, or a combination thereof.
- Fig. 3 shows a coating structure 300 that is usefully disposed on the front, or viewing surface of an OLED structure (e.g., viewing surface 106 of the OLED structure 100) in accordance with an example embodiment.
- the coating structure may be used for the AR layer 107 of the example embodiment of Fig. 1.
- coating structure 300 may be used as the AR coating 107.
- the coating structure 300 is a transparent structure that includes multilayer structure 306 comprised of a barrier layer 301 disposed over a transparent layer 302, which is disposed over another transparent layer 303.
- the transparent layers 302, 303 are of the same materials and thicl ⁇ iesses as the transparent layers of Fig. 2.
- Transparent layer 303 is disposed over or directly onto a substrate 304.
- the coating structure 300 has alternating relatively high index of refraction and relatively low index of refraction layers. This structure is commonly known as a 'low-high-low' or an LHL stack, and is exceedingly useful in preventing reflections. It is noted that in keeping with the LHL stack structure, the coating structure may have more layers than the three layers specifically shown in Fig. 3.
- the substrate 304 is usefully a polymer layer of a material such as described above.
- the coating structure 300 disposed on the viewing side (e.g., 106) of an OLED structure beneficially reduces reflections from the viewing surface and prevents moisture from penetrating the substrate 304 and reaching the OLED region (e.g., layer 102 of Fig. 1).
- all layers of coating structure are necessarily transparent.
- Good barrier layers are often materials having a high index of refraction.
- barrier layer 301 may be a polymer material chosen for its hydrophobic characteristics may be on top of dielectric layer.
- surface reflection can be cut to less than approximately 2% or even approximately 0.5%.
- ITO is a high index material, but by changing reactive sputtering gas or evaporation gas during the deposition, index matching of a polymer/plastic substrate with an OLED structure can be achieved to allow improved reflection from at the viewing surface.
- the additional transparent layers 303 may be disposed over the substrate 304.
- the transparent layers 303, and the barrier layer 301 comprise a three-layer antireflection layer, provided the index of refraction of the barrier layer is less than 1.45.
- the transparent layers 302, 303 having different indices of refraction are generally required for an inorganic material multilayer antireflective coating.
- a multilayer antireflective coating e.g., multilayer AR coating 306 is used to enable a broad AR band and provide a relatively improved barrier to contaminants. The choice of each layer depends on the refractive index required, and the thickness required.
- yi l or y ⁇ l yi y*l y%- m y SU b y3 (eqn. 1)
- y sub the optical admittance of the substrate
- yo the optical admittance of the surrounding medium
- an index matching layer 305 of a material such as described in connection with the embodiment of Fig. 2 is disposed over the substrate 304 as shown.
- This layer like layers 301, 302 and 303 are fabricated by known methods such as those described in connection with the embodiments of Fig. 2.
- One of the layers of the antireflection layer comprised of the barrier layer 301, and the transparent layers 302,303 beneficially is equal to the square-root of the index of refraction of the substrate 301.
- ITO has a refractive index of approximately 2.0 at 550 nm.
- the index matching layer 305 should have an index of refraction of approximately 1.81, making for example, Si 3 N 4 , SiON, and Bi0 2 likely candidates as the index matching layer 305. To wit, it is useful to provide an index matching layer, because any sudden change in index of two adjacent layers will cause reflection. Reflection will cause glare of the display, which is deleterious for reasons described above.
- Fig. 4 shows the Reflectance (%) versus wavelength (nm) for a three-layer AR coating on a polymer substrate.
- the three layers are glass/W (7nm)/Al (80 nm).
- the reflectance is beneficially insignificant over a useful wavelength range.
- Fig. 5 shows the Reflectance versus wavelength for a six layer AR coating of Glass/ W (6.1nm)/Si0 2 (78.5 nm)/W (15.3 nM)/Si0 2 (78.5nm)/Al (71 nm).
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002543425A CA2543425A1 (en) | 2003-10-31 | 2004-10-27 | Oled structures with strain relief, antireflection and barrier layers |
EP04818313A EP1683208A2 (en) | 2003-10-31 | 2004-10-27 | Oled structures with strain relief, antireflection and barrier layers |
JP2006538248A JP2007511049A (en) | 2003-10-31 | 2004-10-27 | OLED structure comprising a strain relief layer, an antireflection layer and a barrier layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/698,723 | 2003-10-31 | ||
US10/698,723 US20050093437A1 (en) | 2003-10-31 | 2003-10-31 | OLED structures with strain relief, antireflection and barrier layers |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005045948A2 true WO2005045948A2 (en) | 2005-05-19 |
WO2005045948A3 WO2005045948A3 (en) | 2005-12-29 |
Family
ID=34550732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/035814 WO2005045948A2 (en) | 2003-10-31 | 2004-10-27 | Oled structures with strain relief, antireflection and barrier layers |
Country Status (8)
Country | Link |
---|---|
US (1) | US20050093437A1 (en) |
EP (1) | EP1683208A2 (en) |
JP (1) | JP2007511049A (en) |
KR (1) | KR20060134940A (en) |
CN (1) | CN1875501A (en) |
CA (1) | CA2543425A1 (en) |
TW (1) | TWI252712B (en) |
WO (1) | WO2005045948A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2949776A1 (en) * | 2009-09-10 | 2011-03-11 | Saint Gobain Performance Plast | LAYERED ELEMENT FOR ENCAPSULATING A SENSITIVE ELEMENT |
FR2949775A1 (en) * | 2009-09-10 | 2011-03-11 | Saint Gobain Performance Plast | PROTECTIVE SUBSTRATE FOR COLOR DEVICE OR RADIATION TRANSMITTER |
DE102010042982A1 (en) * | 2010-10-27 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Electronic component and method for manufacturing an electronic component |
US10036832B2 (en) | 2011-04-08 | 2018-07-31 | Saint-Gobain Performance Plastics Corporation | Multilayer component for the encapsulation of a sensitive element |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100330748A1 (en) | 1999-10-25 | 2010-12-30 | Xi Chu | Method of encapsulating an environmentally sensitive device |
US6866901B2 (en) * | 1999-10-25 | 2005-03-15 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US7198832B2 (en) * | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20090208754A1 (en) * | 2001-09-28 | 2009-08-20 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US8900366B2 (en) | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8808457B2 (en) * | 2002-04-15 | 2014-08-19 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US7648925B2 (en) * | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
JP4547599B2 (en) * | 2003-10-15 | 2010-09-22 | 奇美電子股▲ふん▼有限公司 | Image display device |
US7720264B2 (en) * | 2004-05-10 | 2010-05-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for pupil detection for security applications |
JP2006139932A (en) * | 2004-11-10 | 2006-06-01 | Pentax Corp | Organic electroluminescent element and its manufacturing method |
US8125128B2 (en) * | 2005-03-11 | 2012-02-28 | Mitsubishi Chemical Corporation | Electroluminescence element and lighting apparatus |
US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
TWI314025B (en) * | 2006-04-13 | 2009-08-21 | Au Optronics Corp | Method for fabricating active illumination apparatus |
US20080102223A1 (en) * | 2006-11-01 | 2008-05-01 | Sigurd Wagner | Hybrid layers for use in coatings on electronic devices or other articles |
US20080290798A1 (en) * | 2007-05-22 | 2008-11-27 | Mark Alejandro Quesada | LLT barrier layer for top emission display device, method and apparatus |
FR2925728B1 (en) * | 2007-12-20 | 2010-01-01 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING ORGANIC DIODE IDENTIFICATION AND AUTHENTICATION DEVICE, DEVICE AND METHOD OF USE |
JP5515237B2 (en) * | 2008-05-14 | 2014-06-11 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE |
US9337446B2 (en) * | 2008-12-22 | 2016-05-10 | Samsung Display Co., Ltd. | Encapsulated RGB OLEDs having enhanced optical output |
US9184410B2 (en) | 2008-12-22 | 2015-11-10 | Samsung Display Co., Ltd. | Encapsulated white OLEDs having enhanced optical output |
US8590338B2 (en) | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
JP5452266B2 (en) * | 2010-02-08 | 2014-03-26 | パナソニック株式会社 | Light emitting device |
KR101951223B1 (en) * | 2012-10-26 | 2019-02-25 | 삼성디스플레이 주식회사 | Display device and method of manufacturing the same |
CN104730603B (en) * | 2015-04-01 | 2017-10-17 | 京东方科技集团股份有限公司 | A kind of anti-reflection layer stack structure and preparation method thereof, substrate and display device |
CN105047550B (en) * | 2015-07-27 | 2017-11-07 | 京东方科技集团股份有限公司 | A kind of conductive component and preparation method thereof, substrate, display device |
KR102454824B1 (en) * | 2016-03-25 | 2022-10-18 | 삼성디스플레이 주식회사 | Flexible display device |
KR102534273B1 (en) * | 2016-03-25 | 2023-05-19 | 삼성디스플레이 주식회사 | Flexible display device |
US10304603B2 (en) * | 2016-06-29 | 2019-05-28 | International Business Machines Corporation | Stress control in magnetic inductor stacks |
US10811177B2 (en) * | 2016-06-30 | 2020-10-20 | International Business Machines Corporation | Stress control in magnetic inductor stacks |
US10283249B2 (en) | 2016-09-30 | 2019-05-07 | International Business Machines Corporation | Method for fabricating a magnetic material stack |
CN107068885B (en) * | 2017-04-26 | 2019-02-15 | 深圳国冶星光电科技股份有限公司 | A kind of Organic Light Emitting Diode curved face display panel, display device and production method |
KR102463737B1 (en) * | 2017-12-04 | 2022-11-03 | 엘지디스플레이 주식회사 | Flexible Organic Light Emitting Diode Display |
CN110767660B (en) * | 2018-07-24 | 2022-09-16 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0372763A2 (en) * | 1988-12-02 | 1990-06-13 | National Research Council Of Canada | An optical interference, electroluminescent device having low reflectance |
US20030062519A1 (en) * | 2001-10-01 | 2003-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment, and organic polarizing film |
WO2003069957A1 (en) * | 2002-02-12 | 2003-08-21 | Idemitsu Kosan Co., Ltd. | Organic el display and its production method |
JP2003303682A (en) * | 2002-04-09 | 2003-10-24 | Pioneer Electronic Corp | Electroluminescent display device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US146266A (en) * | 1874-01-06 | Improvement in marine propulsion | ||
US62519A (en) * | 1867-03-05 | Improved peat machine | ||
US863A (en) * | 1838-08-01 | Manufacture of cards fob carding cotton | ||
US4066925A (en) * | 1976-08-03 | 1978-01-03 | Minnesota Mining And Manufacturing Company | Electroluminescent lamp and electrode preform for use therewith |
US5521759A (en) * | 1993-06-07 | 1996-05-28 | National Research Council Of Canada | Optical filters for suppressing unwanted reflections |
US6867539B1 (en) * | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
US6891330B2 (en) * | 2002-03-29 | 2005-05-10 | General Electric Company | Mechanically flexible organic electroluminescent device with directional light emission |
-
2003
- 2003-10-31 US US10/698,723 patent/US20050093437A1/en not_active Abandoned
-
2004
- 2004-10-27 KR KR1020067010154A patent/KR20060134940A/en not_active Application Discontinuation
- 2004-10-27 EP EP04818313A patent/EP1683208A2/en not_active Withdrawn
- 2004-10-27 WO PCT/US2004/035814 patent/WO2005045948A2/en not_active Application Discontinuation
- 2004-10-27 CN CNA2004800325332A patent/CN1875501A/en active Pending
- 2004-10-27 JP JP2006538248A patent/JP2007511049A/en not_active Withdrawn
- 2004-10-27 CA CA002543425A patent/CA2543425A1/en not_active Abandoned
- 2004-10-28 TW TW093133203A patent/TWI252712B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0372763A2 (en) * | 1988-12-02 | 1990-06-13 | National Research Council Of Canada | An optical interference, electroluminescent device having low reflectance |
US20030062519A1 (en) * | 2001-10-01 | 2003-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic equipment, and organic polarizing film |
WO2003069957A1 (en) * | 2002-02-12 | 2003-08-21 | Idemitsu Kosan Co., Ltd. | Organic el display and its production method |
JP2003303682A (en) * | 2002-04-09 | 2003-10-24 | Pioneer Electronic Corp | Electroluminescent display device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2949776A1 (en) * | 2009-09-10 | 2011-03-11 | Saint Gobain Performance Plast | LAYERED ELEMENT FOR ENCAPSULATING A SENSITIVE ELEMENT |
FR2949775A1 (en) * | 2009-09-10 | 2011-03-11 | Saint Gobain Performance Plast | PROTECTIVE SUBSTRATE FOR COLOR DEVICE OR RADIATION TRANSMITTER |
WO2011029786A1 (en) * | 2009-09-10 | 2011-03-17 | Saint-Gobain Performance Plastics Corporation | Protective substrate for a device that collects or emits radiation |
WO2011029787A1 (en) * | 2009-09-10 | 2011-03-17 | Saint-Gobain Performance Plastics Corporation | Layered element for encapsulating a sensitive element |
CN102714279A (en) * | 2009-09-10 | 2012-10-03 | 圣戈班高性能塑料公司 | Protective substrate for a device that collects or emits radiation |
US8766280B2 (en) | 2009-09-10 | 2014-07-01 | Saint-Gobain Performance Plastics Corporation | Protective substrate for a device that collects or emits radiation |
US9246131B2 (en) | 2009-09-10 | 2016-01-26 | Saint-Gobain Performance Plastics Corporation | Layered element for encapsulating a senstive element |
DE102010042982A1 (en) * | 2010-10-27 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Electronic component and method for manufacturing an electronic component |
US10036832B2 (en) | 2011-04-08 | 2018-07-31 | Saint-Gobain Performance Plastics Corporation | Multilayer component for the encapsulation of a sensitive element |
Also Published As
Publication number | Publication date |
---|---|
CN1875501A (en) | 2006-12-06 |
TWI252712B (en) | 2006-04-01 |
CA2543425A1 (en) | 2005-05-19 |
TW200527952A (en) | 2005-08-16 |
KR20060134940A (en) | 2006-12-28 |
EP1683208A2 (en) | 2006-07-26 |
JP2007511049A (en) | 2007-04-26 |
US20050093437A1 (en) | 2005-05-05 |
WO2005045948A3 (en) | 2005-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20050093437A1 (en) | OLED structures with strain relief, antireflection and barrier layers | |
KR100752716B1 (en) | Organic electroluminescent device | |
KR101076262B1 (en) | Anti-reflective organic light emitting diode device | |
EP1478032A2 (en) | Light emitting diode method for forming the same | |
EP1478034A2 (en) | Light-emitting apparatus and method for forming the same | |
KR20060102446A (en) | Organic electro luminescence display and methode for manufacturing the same | |
WO2018205600A1 (en) | Display panel, manufacturing method thereof, and display apparatus | |
US20130257268A1 (en) | Organic light emitting diode display | |
KR101618449B1 (en) | Organic Light Emitting Device | |
WO2015068738A1 (en) | Transparent conductive body | |
US20090122238A1 (en) | Protection Filter For Liquid Crystal Display | |
US20050006652A1 (en) | Electroluminescent device having anti-reflective member | |
US8067886B2 (en) | Composite optical destructive electrode for high contrast electroluminescent devices | |
US7511417B2 (en) | Organic light-emitting source with light-guiding substrate | |
KR20120139988A (en) | Cathode for organic light emitting device and organic light emitting device using the cathode | |
JP2004342521A (en) | Self-luminous device | |
JP2004342523A (en) | Self-luminous device | |
KR20080104324A (en) | Flexible electroluminescent devices | |
JP2004342513A (en) | Self-luminous device | |
KR102542171B1 (en) | Flexible transparent conductive film, transparent electrode and transparent infrared radiation-cutting film comprising the same | |
US20220123244A1 (en) | Transparent electrode structure and electrical device including the same | |
KR20230134964A (en) | Window and display device including the same | |
KR20240111852A (en) | Window and display device including the same | |
CN116758817A (en) | Window and display device including the same | |
KR20240042671A (en) | Optical laminates, and anti-reflective films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480032533.2 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2543425 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2263/DELNP/2006 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006538248 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067010154 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004818313 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2004818313 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067010154 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2004818313 Country of ref document: EP |