WO2005043601A2 - Appareil et procede de formation de circuits integres composes - Google Patents
Appareil et procede de formation de circuits integres composes Download PDFInfo
- Publication number
- WO2005043601A2 WO2005043601A2 PCT/US2004/036739 US2004036739W WO2005043601A2 WO 2005043601 A2 WO2005043601 A2 WO 2005043601A2 US 2004036739 W US2004036739 W US 2004036739W WO 2005043601 A2 WO2005043601 A2 WO 2005043601A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- integrated circuit
- seal ring
- master
- compound
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 5
- 238000004513 sizing Methods 0.000 claims 1
- 230000007847 structural defect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 20
- 239000002699 waste material Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 14
- 230000006870 function Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010615 ring circuit Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
Definitions
- Memory 304 can include RAM (e.g., SRAM) and/or ROM memory and can be programmed as single-port, dual-port, first- in-first-out, or as other like memory configurations.
- Inputs 306 and outputs 308 can include one or more simple inputs and output, respectively, such as CMOS, TTL, or the like. Inputs 306 and outputs 308 can be configured to operate jointly to form bi-directional, high-input impedance I/Os.
- lower seal ring 703 and upper seal ring 702 need not be formed 90 degrees with the substrate and can each be formed by staggering constituent vias horizontally in each subsequent fabrication layer.
- pad 708 and its underlying pad support 732 are formed vertically over inoperative logic of peripheral master module 730.
- upper seal ring 702 is formed at least a particular distance from one edge of inoperative logic so as to provide an interconnect area on the surface of peripheral master module 730. This area enables pad 708 to be placed beyond the usual seal ring barrier, which is typically defined as the location of lower seal ring 703.
- the inoperative logic provides at least some support for pad support 732.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70137503A | 2003-11-03 | 2003-11-03 | |
US10/701,375 | 2003-11-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005043601A2 true WO2005043601A2 (fr) | 2005-05-12 |
WO2005043601A3 WO2005043601A3 (fr) | 2005-12-01 |
Family
ID=34551413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/036739 WO2005043601A2 (fr) | 2003-11-03 | 2004-11-03 | Appareil et procede de formation de circuits integres composes |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2005043601A2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI823617B (zh) * | 2022-10-14 | 2023-11-21 | 鯨鏈科技股份有限公司 | 可重組式容量頻寬記憶體結構及其製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6175952B1 (en) * | 1997-05-27 | 2001-01-16 | Altera Corporation | Technique of fabricating integrated circuits having interfaces compatible with different operating voltage conditions |
US6226779B1 (en) * | 1997-09-29 | 2001-05-01 | Xilinx, Inc. | Programmable IC with gate array core and boundary scan capability |
US6480989B2 (en) * | 1998-06-29 | 2002-11-12 | Lsi Logic Corporation | Integrated circuit design incorporating a power mesh |
US6564364B1 (en) * | 2000-11-15 | 2003-05-13 | Reshape, Inc. | Method and system for maintaining element abstracts of an integrated circuit netlist using a master library file and modifiable master library file |
-
2004
- 2004-11-03 WO PCT/US2004/036739 patent/WO2005043601A2/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6604228B1 (en) * | 1996-05-28 | 2003-08-05 | Altera Corporation | Technique of fabricating integrated circuits having interfaces compatible with different operating voltage conditions |
US6175952B1 (en) * | 1997-05-27 | 2001-01-16 | Altera Corporation | Technique of fabricating integrated circuits having interfaces compatible with different operating voltage conditions |
US6226779B1 (en) * | 1997-09-29 | 2001-05-01 | Xilinx, Inc. | Programmable IC with gate array core and boundary scan capability |
US6480989B2 (en) * | 1998-06-29 | 2002-11-12 | Lsi Logic Corporation | Integrated circuit design incorporating a power mesh |
US6564364B1 (en) * | 2000-11-15 | 2003-05-13 | Reshape, Inc. | Method and system for maintaining element abstracts of an integrated circuit netlist using a master library file and modifiable master library file |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI823617B (zh) * | 2022-10-14 | 2023-11-21 | 鯨鏈科技股份有限公司 | 可重組式容量頻寬記憶體結構及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005043601A3 (fr) | 2005-12-01 |
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