WO2005041205A1 - Unite de memoire reinscriptible a base de materiaux organiques - Google Patents

Unite de memoire reinscriptible a base de materiaux organiques Download PDF

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Publication number
WO2005041205A1
WO2005041205A1 PCT/EP2004/052576 EP2004052576W WO2005041205A1 WO 2005041205 A1 WO2005041205 A1 WO 2005041205A1 EP 2004052576 W EP2004052576 W EP 2004052576W WO 2005041205 A1 WO2005041205 A1 WO 2005041205A1
Authority
WO
WIPO (PCT)
Prior art keywords
component
memory
writing
reading
write
Prior art date
Application number
PCT/EP2004/052576
Other languages
German (de)
English (en)
Inventor
Christoph Brabec
Ralph Pätzold
Carsten Tschamber
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to EP04791253A priority Critical patent/EP1683158A1/fr
Publication of WO2005041205A1 publication Critical patent/WO2005041205A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam

Definitions

  • Rewritable storage unit based on organic materials
  • the present invention relates to a rewritable storage device for data, in particular it relates to a device in which each memory cell has its own writing device, i.e. with which the data are completely written in parallel.
  • Conventional storage devices usually consist of three separate units: the reading unit, the writing unit and the physical data carrier.
  • CD-Rs one-off
  • CD-Rs rewritable CDs
  • the read / write head and the data carrier are not one unit, i.e. the actual data carrier alone does not contain any devices for writing or reading data and can be physically separated from the read / write devices.
  • Adjust track with magnetic read / write heads the same applies to laser heads with CD burners or the like.
  • the properties of the read / write device could be optimally matched to the physical data carrier.
  • RAM memory modules can in principle be designed in such a way that data can be written in parallel.
  • the main disadvantage of these widespread memories is that they rely on a constant energy supply in order to preserve their memory content Their content must be refreshed at intervals. This causes constant energy consumption during operation, even without writing operations occurring. In addition, the memory content remains without Energy supply not received, so it is volatile storage.
  • the object of the present invention is to provide a data storage device which has various advantages. It is made up of cheap, easy-to-manufacture and energy-saving components. Data can be written to the device in parallel, i.e. each cell of the memory device can be written to simultaneously.
  • OLEDs organic light-emitting diodes
  • organic displays as well as organic solar cells and photo detectors.
  • the latter basically consist of thin organic films, which are stored as electrodes between two metal layers. If light falls through the transparent electrode, free charge carriers are created in the organic layer. A voltage can now be tapped between the electrodes via a resistor.
  • OBDs Organic Bistable Devices
  • a device which is intended for storing data.
  • the device contains a storage device. Furthermore, it contains a writing device which is designed to be integral with a reading device in such a way that the device can receive data through the incidence of light and write it into the storage device.
  • the memory device contains at least one memory component, which is a bistable component.
  • the writing device contains at least one writing component, which is a photodetector.
  • the reading device contains at least one reading component, which is a photodetector. This makes it possible to receive light and convert it into a proportional electrical signal in an easily and inexpensively available component.
  • Writing device and a reading component of the reading device are integrally designed as a writing / reading component.
  • each memory component of the memory device is assigned a read / write component common to the write device and the read device.
  • the memory device is rewritable. This means that any data can be deleted or overwritten with new data. It is preferred that the memory device is a non-volatile memory. This means that the saved data is retained even after the write process without any additional energy supply.
  • the memory component is a bistable component that consists at least partially of organic material.
  • the writing component is a photodetector that is at least partially made of organic material.
  • the reading component is a photodetector that consists at least partially of organic material.
  • the writing device is electrically connected to the storage device.
  • Writing device and the reading device are mounted on a common carrier.
  • FIG. 1 shows an embodiment of the device according to the invention.
  • Figure 2 shows another of the device according to the invention.
  • a storage device 4, a writing device 6 and a reading device are shown in the figures.
  • Memory components 8 of the memory device 4 are arranged in a layer that extends over a surface and in the storage device 4 in its entirety.
  • writing / reading components 18 of the writing device 6 and reading device are arranged in a layer which spreads over a surface and forms an integral combination of writing device 6 and reading device in its entirety.
  • the two layers 4 are produced directly adjacent to one another or on top of one another. For reasons of clarity, the two layers are shown separated by a larger distance.
  • the data is sent to device 2 using light.
  • Each reading component of the reading device can collect light and convert it into a corresponding voltage.
  • the step of receiving light corresponds to the reading function of the reading device.
  • the write function is to control a memory component 8 of the memory device 4 by means of the voltage generated by the write unit 6 and to switch it to the desired of the two stable states.
  • One of the states corresponds to binary "0” and the other to binary "1”.
  • a resistance value of a memory component 8 is then assigned to each possible value “0” or “1”.
  • the two resistors, which correspond to the two possible states of a memory component 8, differ by approximately 4-5 orders of magnitude.
  • Data that has been written into the memory device 2 in the manner described by means of light can now be read out electrically by applying a voltage to the memory components 8 of the memory device 4. It is only necessary to ensure that the polarity of the applied device Voltages must be the same direction as the writing voltage, and the level of the voltage must be clear must be below the switching voltage. Otherwise, the integrity of the memory content would not be guaranteed, since reading out with such a voltage can cause a switchover from one state to another. This is because the switching over of the individual cells can take place in the excited state by a low counter-voltage, or, if the cell is in the ground state, by a sufficiently high voltage. Data can be read out using a passive matrix. Since only resistances have to be measured, only low currents are required, and the reading out of the device 2 can thus be designed to save energy.
  • each memory component 8 of the memory device 4 has its own write unit of the write device 6. This means that data can be written into the memory device 4 completely in parallel. Apart from an offset, which can result from the reaction time of the write components, the read components and the memory components 8, the speed of the write process is practically independent of the amount of data to be written. That Write operations can be reduced to a minimum. This is a great advantage compared to conventional, serial write processes with widespread data storage. With such memories, the time for writes scales essentially linearly with the amount of data to be written.
  • the storage device described has the advantage of being written, ie optically, by means of light. You could also say that it is able to convert data from an optical form to an electrical form. This results in a wide range of possible uses and advantages.
  • the device can be used in applications in which data must be transmitted between two systems which are to be electrically separated from one another. Or it can be used in situations where it is necessary to store information in an optical form available.
  • optical data signals do not rely on a transmitting conductor, which results in a number of possible advantages that are certain to be apparent to experts.
  • FIG. 2 shows the layer structure of a device according to the invention from the side. It is extended in a direction perpendicular to the drawing surface.
  • the carrier material of the carrier 12 is located at the lower position, above which the memory components 8 are then applied.
  • the top layer is formed by the read / write components 18, which are connected directly to the storage components 8 located underneath.
  • the data are written in by means of light beams L which fall on the read / write components 18 from above.
  • the layer of the read / write component 18 in its entirety forms the integral write device 6 and the read device.
  • OLEDs Organic components
  • OLEDs organic components
  • photodiodes and the like are just as inexpensive to manufacture as they are lightweight, energy-saving and extremely compact.
  • novel memory modules can be produced with excellent properties.
  • These memory cells can be used in optically relevant applications in which light has to be converted directly into information. They can also be used in electronic data processing. They offer the possibility of producing the described memory device 2 very easily using existing techniques (structuring, etc.).
  • By mounting the necessary memory components 8 and the read / write components 18 on a common carrier 12 large arrangements of a device 2 according to the invention can also be produced in a simple and very inexpensive process.
  • the steps for structuring the memory components 8 and the write / read components 18 can be identical in part, the manufac
  • the storage device 2 is essentially limited to the application of different layers of metal and organic material to the carrier 12.
  • the necessary connections between the storage device 4 and the writing device 6 can be realized in the layer structure in a very simple manner.
  • the device 2 is made up entirely of semiconductor components, i.e. it has no moving parts. This avoids the disadvantages described above which arise when storing with moving parts. The device 2 therefore also operates with little noise. The device 2 is also characterized by low energy consumption, which is based on the use of organic semiconductors.
  • the memory cells are bistable organic components, the memory content is retained after the write process without an energy supply. It is a non-volatile memory, in contrast to conventional RAM memory modules, for example.
  • the device according to the invention has no moving parts. It can be used to convert light into information. It is largely insensitive to mechanical shock loads since it contains no moving parts.
  • the device is a non-volatile memory.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne un dispositif de mémoire réinscriptible pour des données. Ledit dispositif (2) pour stocker des données, contient un dispositif de mémoire (4), un dispositif d'écriture (6) et un dispositif de lecture et se caractérise en ce que le dispositif d'écriture (6) et le dispositif de lecture sont conçus de manière monobloc, de sorte qu'ils reçoivent des données par incidence de la lumière et qu'ils les inscrivent dans le dispositif de mémoire (4).
PCT/EP2004/052576 2003-10-22 2004-10-19 Unite de memoire reinscriptible a base de materiaux organiques WO2005041205A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04791253A EP1683158A1 (fr) 2003-10-22 2004-10-19 Unite de memoire reinscriptible a base de materiaux organiques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10349026 2003-10-22
DE10349026.4 2003-10-22

Publications (1)

Publication Number Publication Date
WO2005041205A1 true WO2005041205A1 (fr) 2005-05-06

Family

ID=34484890

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/052576 WO2005041205A1 (fr) 2003-10-22 2004-10-19 Unite de memoire reinscriptible a base de materiaux organiques

Country Status (2)

Country Link
EP (1) EP1683158A1 (fr)
WO (1) WO2005041205A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1979000096A1 (fr) * 1977-08-15 1979-03-08 Photovoltaic Ceramic Corp Memoire optique avec stockage tridimensionnel
US4747077A (en) * 1983-12-10 1988-05-24 The British Petroleum Company P.L.C. Method of detecting the conductance state of a non-volatile memory device
JPS6454416A (en) * 1987-08-25 1989-03-01 Canon Kk Spatial optical modulator
EP0330395A2 (fr) * 1988-02-22 1989-08-30 Canon Kabushiki Kaisha Elément interrupteur
EP0482920A2 (fr) * 1990-10-24 1992-04-29 Kabushiki Kaisha Toshiba Composant optique organique
EP0594170A1 (fr) * 1992-10-22 1994-04-27 Mitsubishi Chemical Corporation Elément pour le traitement d'information optique et dispositif pour la conversion opto-optique

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1979000096A1 (fr) * 1977-08-15 1979-03-08 Photovoltaic Ceramic Corp Memoire optique avec stockage tridimensionnel
US4747077A (en) * 1983-12-10 1988-05-24 The British Petroleum Company P.L.C. Method of detecting the conductance state of a non-volatile memory device
JPS6454416A (en) * 1987-08-25 1989-03-01 Canon Kk Spatial optical modulator
EP0330395A2 (fr) * 1988-02-22 1989-08-30 Canon Kabushiki Kaisha Elément interrupteur
EP0482920A2 (fr) * 1990-10-24 1992-04-29 Kabushiki Kaisha Toshiba Composant optique organique
EP0594170A1 (fr) * 1992-10-22 1994-04-27 Mitsubishi Chemical Corporation Elément pour le traitement d'information optique et dispositif pour la conversion opto-optique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 256 (P - 884) 14 June 1989 (1989-06-14) *

Also Published As

Publication number Publication date
EP1683158A1 (fr) 2006-07-26

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