WO2005034235A3 - Halbleitermodul mit trägereinrichtung und verfahren zur herstellung des halbleitermoduls - Google Patents

Halbleitermodul mit trägereinrichtung und verfahren zur herstellung des halbleitermoduls Download PDF

Info

Publication number
WO2005034235A3
WO2005034235A3 PCT/EP2004/010893 EP2004010893W WO2005034235A3 WO 2005034235 A3 WO2005034235 A3 WO 2005034235A3 EP 2004010893 W EP2004010893 W EP 2004010893W WO 2005034235 A3 WO2005034235 A3 WO 2005034235A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor module
producing
semiconductor
carrier device
module
Prior art date
Application number
PCT/EP2004/010893
Other languages
English (en)
French (fr)
Other versions
WO2005034235A2 (de
Inventor
Harry Hedler
Roland Irsigler
Thorsten Meyer
Original Assignee
Infineon Technologies Ag
Harry Hedler
Roland Irsigler
Thorsten Meyer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Harry Hedler, Roland Irsigler, Thorsten Meyer filed Critical Infineon Technologies Ag
Publication of WO2005034235A2 publication Critical patent/WO2005034235A2/de
Publication of WO2005034235A3 publication Critical patent/WO2005034235A3/de
Priority to US11/364,770 priority Critical patent/US7646090B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02379—Fan-out arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0612—Layout
    • H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

Die vorliegende Erfindung stellt ein Halbleitermodul bereit mit: einer Halbleitereinrichtung (10), welche eine Kontakteinrichtung (11) zur elektrischen Kontaktierung einer Anschlusseinrichtung über eine Umverdrahtungseinrichtung (15) aufweist; und einer Trägereinrichtung (12, 13, 14) zur mechanischen Kopplung der Halbleitereinrichtung (10) an eine Anschlusseinrichtung, wobei die Trägereinrichtung (12, 13, 14) einen Gradienten zwischen einem ersten Elastizitätsmodul an der Halbleitereinrichtung (10) und einem zweiten, höheren Elastizitätsmodul an der Anschlusseinrichtung aufweist. Die vorliegende Erfindung stellt ebenfalls ein Verfahren zur Herstellung des Halbleitermoduls bereit.
PCT/EP2004/010893 2003-09-30 2004-09-29 Halbleitermodul mit trägereinrichtung und verfahren zur herstellung des halbleitermoduls WO2005034235A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/364,770 US7646090B2 (en) 2003-09-30 2006-02-28 Semiconductor module for making electrical contact with a connection device via a rewiring device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10345395A DE10345395B4 (de) 2003-09-30 2003-09-30 Halbleitermodul und Verfahren zur Herstellung eines Halbleitermoduls
DE10345395.4 2003-09-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/364,770 Continuation US7646090B2 (en) 2003-09-30 2006-02-28 Semiconductor module for making electrical contact with a connection device via a rewiring device

Publications (2)

Publication Number Publication Date
WO2005034235A2 WO2005034235A2 (de) 2005-04-14
WO2005034235A3 true WO2005034235A3 (de) 2005-11-24

Family

ID=34399073

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/010893 WO2005034235A2 (de) 2003-09-30 2004-09-29 Halbleitermodul mit trägereinrichtung und verfahren zur herstellung des halbleitermoduls

Country Status (3)

Country Link
US (1) US7646090B2 (de)
DE (1) DE10345395B4 (de)
WO (1) WO2005034235A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100834442B1 (ko) * 2007-01-16 2008-06-04 삼성전자주식회사 증가된 결합 신뢰성을 갖는 반도체 모듈들
JP4121543B1 (ja) * 2007-06-18 2008-07-23 新光電気工業株式会社 電子装置
US9030019B2 (en) 2010-12-14 2015-05-12 Infineon Technologies Ag Semiconductor device and method of manufacture thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000055910A1 (en) * 1999-03-15 2000-09-21 Hitachi, Ltd. Semiconductor device and semiconductor module
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
EP1143515A2 (de) * 2000-04-06 2001-10-10 Shinko Electric Industries Co. Ltd. Verdrahtungssubstrat, seine Herstellung und Halbleiterbauteil
US20020079575A1 (en) * 2000-12-25 2002-06-27 Hiroshi Hozoji Semiconductor module
US6624504B1 (en) * 1999-10-29 2003-09-23 Hitachi, Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3335575B2 (ja) * 1997-06-06 2002-10-21 松下電器産業株式会社 半導体装置およびその製造方法
JPH11148068A (ja) * 1997-11-18 1999-06-02 Shinko Electric Ind Co Ltd 異方性応力緩衝体及びそれを用いた半導体装置
DE10059178C2 (de) * 2000-11-29 2002-11-07 Siemens Production & Logistics Verfahren zur Herstellung von Halbleitermodulen sowie nach dem Verfahren hergestelltes Modul

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
WO2000055910A1 (en) * 1999-03-15 2000-09-21 Hitachi, Ltd. Semiconductor device and semiconductor module
US6927489B1 (en) * 1999-03-15 2005-08-09 Renesas Technology Corp. Semiconductor device provided with rewiring layer
US6624504B1 (en) * 1999-10-29 2003-09-23 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
EP1143515A2 (de) * 2000-04-06 2001-10-10 Shinko Electric Industries Co. Ltd. Verdrahtungssubstrat, seine Herstellung und Halbleiterbauteil
US20020079575A1 (en) * 2000-12-25 2002-06-27 Hiroshi Hozoji Semiconductor module

Also Published As

Publication number Publication date
DE10345395B4 (de) 2006-09-14
WO2005034235A2 (de) 2005-04-14
DE10345395A1 (de) 2005-05-04
US7646090B2 (en) 2010-01-12
US20060177964A1 (en) 2006-08-10

Similar Documents

Publication Publication Date Title
WO2004027835A3 (en) Advanced microelectronic connector assembly and method of manufacturing
ATE377843T1 (de) Multichip-schaltungsmodul und verfahren zur herstellung hierzu
WO2007004137A3 (en) Electronic device
WO2003058763A3 (en) Vehicle accessory power connector
WO2004047910A3 (en) Lead upsizing sleeve
WO2008005614A3 (en) Chip module for complete power train
WO2003023479A8 (en) Multimodal miniature microscope
WO2003054954A3 (en) Electrical/optical integration scheme using direct copper bonding
WO2005091366A3 (de) Halbleitermodul mit einem kopplungssubstrat und verfahren zur herstellung desselben
TW200735301A (en) Integrated circuit package system with die on base package
AU2002365778A1 (en) Electric circuit module and method for its assembly
WO2002076164A3 (en) Electronic module with fluid dissociation electrodes and methods
WO2004010478A3 (en) Electronic connector for a cable
EP1107655A3 (de) Verbindungsstruktur mit niedrigem Profil
WO2005101460A3 (en) Bonding an interconnect to a circuit device and related devices
MXPA03006166A (es) Procedimiento y dispositivo para unir conductores.
EP1744362A3 (de) Halbleiterbauelement und elektronische Vorrichtung
WO2004090976A3 (en) Optical communication between face-to-face semiconductor chips
TW200603706A (en) A method of fabricating a built-in chip type substrate
EP1473830A3 (de) Fotoverstärker mit verbesserter Störunterdrückung der Spannungsversorgung
WO2005034235A3 (de) Halbleitermodul mit trägereinrichtung und verfahren zur herstellung des halbleitermoduls
EP1156234A3 (de) Sensor
WO2003025889A1 (fr) Dispositif electronique, son procede de production et appareil electronique
HK1049915A1 (en) Circuit board, method for manufacturing same, and high-output module.
WO2004109590A3 (de) Datenträger und herstellungsverfahren

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 11364770

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 11364770

Country of ref document: US

122 Ep: pct application non-entry in european phase