WO2005017988A1

WO2005017988A1 - Substrate processing apparatus and method for manufacturing semiconductor device

Info

Publication number: WO2005017988A1
Application number: PCT/JP2004/011470
Authority: WO
Inventors: Mitsuro Tanabe
Original assignee: Hitachi Kokusai Electric Inc.
Priority date: 2003-08-15
Filing date: 2004-08-10
Publication date: 2005-02-24
Also published as: JPWO2005017988A1

Abstract

A substrate processing apparatus is disclosed which comprises a process chamber (225) for processing a wafer (200), a susceptor (217) on which the wafer (200) is placed, and a lamp (500) for heating the substrate. The susceptor (217) has a structure wherein an inner susceptor (520) made of a material which does not transmit the light emitted from the lamp (500) is arranged inside a transparent quartz susceptor (510).

Description

Specification

Substrate processing apparatus and semiconductor device manufacturing method

Technical field

The present invention relates to a substrate processing apparatus, and more particularly, to a semiconductor manufacturing apparatus having a susceptor that suppresses taking in the direct radiation intensity of a wafer heater from the outer periphery of a wafer when measuring the temperature of the wafer with a radiation thermometer. It is about.

Background art

Conventionally, in this type of apparatus, the susceptor 217 uses (1) a quartz susceptor 501 with a Si film 502 coded on its surface (see FIG. 1), and (2) a susceptor 504 made of Si / Poly—Si. (See Fig. 2) and (3) a Si / Poly-Si plate 506 combined with a quartz susceptor 505 (see Fig. 3). Si can suppress the transmission of light in the measurement wavelength range (0.9-1 · Ιμΐη) of the radiation thermometer 261 and the control temperature range (350 ° C-1200 ° C), and the lamp energy It is commonly used to prevent the transmission of light. SiC and carbon coated with SiC are also used.

[0003] However, in the case of (1) shown in FIG. 1, since the thermal expansion coefficient of quartz is different from the thermal expansion coefficient of Si, a crack is generated between the quartz susceptor 501 and the Si film 602 when the temperature is repeatedly increased and decreased. As a result, there is a problem that the Si film 602 peels off (see section A).

[0004] In the case of (2) shown in Fig. 2, the heat capacity of the SiZPoly-Si susceptor 504 is large, so that when continuous processing is started, the susceptor 504 itself located on the outer periphery is stabilized at a high temperature, and a wafer at room temperature is discharged. When the wafer 200 is transported to the susceptor 217, there is a problem that the temperature difference between the center of the wafer 200 and the outer periphery of the wafer 200 causes the wafer 200 to be displaced by slip or thermal deformation.

[0005] In the case of (3) shown in FIG. 3, in order to suppress the heat capacity of the susceptor 217 and enhance the cooling effect, the quartz plate 505 and the Si plate 506 have a double structure. Although 500 is divided into several zones so that the temperature inside the surface of the wafer 200 can be controlled to a uniform temperature, the outer peripheral range of the wafer 200 on which the Si plate 505 is mounted is not a uniform temperature rise / fall range, so temperature unevenness may occur. Deformation and breakage will occur. Further, there is a problem that the lamp light leaks due to the deformation, and the detection error of the temperature taken by the radiation thermometer 261 becomes large. [0006] A main object of the present invention is to solve the problems of the prior art such as peeling of the Si film due to insufficient strength against thermal stress, an increase in heat capacity, and transmission of lamp light, and more reliable temperature detection and long life. It is an object of the present invention to provide a substrate processing apparatus provided with a susceptor capable of achieving a high performance.

Disclosure of the invention

[0007] According to one aspect of the present invention,

A processing chamber forming a space for processing a substrate;

A substrate mounting member for mounting the substrate,

Having a heating member for heating the substrate,

A substrate processing apparatus is provided, wherein a member that does not transmit light emitted from the heating member is provided inside at least a part of the substrate mounting member.

[0008] According to another aspect of the present invention,

A processing chamber forming a space for processing a substrate;

A substrate mounting member for mounting the substrate,

Having a heating member for heating the substrate,

A method of manufacturing a semiconductor device, comprising a step of processing a substrate using a substrate processing apparatus provided with a member that does not transmit radiation emitted from the heating member inside at least a part of the substrate mounting member. hand,

Heating the substrate by the heating member,

Supplying a desired gas to the processing chamber;

Measuring the temperature of the device surface of the substrate,

Controlling the heating member based on the result of measuring the temperature of the substrate.

Brief Description of Drawings

FIG. 1 is a schematic cross-sectional view for explaining an example of a susceptor of a conventional substrate processing apparatus.

FIG. 2 is a schematic cross-sectional view for explaining another example of a susceptor of a conventional substrate processing apparatus.

FIG. 3 is a schematic sectional view for explaining still another example of the susceptor of the conventional substrate processing apparatus. FIG. 4 is a schematic cross-sectional view for explaining a susceptor of the substrate processing apparatus according to the first and second embodiments of the present invention.

FIG. 5A is a partially enlarged schematic exploded sectional view for illustrating a manufacturing process of a susceptor of the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 5B is a partially enlarged schematic cross-sectional view for explaining a state after the susceptor of the substrate processing apparatus according to the first embodiment of the present invention is manufactured.

FIG. 6A is a partially enlarged schematic exploded sectional view for illustrating a manufacturing process of a susceptor of the substrate processing apparatus according to the second embodiment of the present invention.

FIG. 6B is a partially enlarged schematic cross-sectional view for explaining a state after the susceptor of the substrate processing apparatus according to the second embodiment of the present invention is manufactured.

Garden 7] is a schematic cross-sectional view of an example of a substrate processing apparatus to which the present invention is suitably applied. Garden 8] is a schematic longitudinal sectional view for explaining a processing chamber of the substrate processing apparatus suitably used in the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Next, preferred embodiments and examples of the present invention will be described with reference to the drawings.

[0011] In Examples 1 and 2 of the present invention,

(1) To suppress the transmission of the lamp light (0.9-1.111) to 0.01% or less;

(2) It must be strong enough to withstand the use atmosphere and heat cycle at normal temperature and 1200 ° C.

(3) Low heat capacity so that the temperature rises and falls following lamp ON-OFF;

(4) As shown in Fig. 4, the susceptor 217 must be replaced with a quartz susceptor to achieve the four points of being a high-purity material (not a source of particles, organic contamination, and metal contamination). The 510 has a structure in which a member that does not transmit as much as 500 lamps of radiated light is provided as an internal susceptor 520. Note that the wafer 200 has a structure in which it is mounted on a transparent quartz plate 503 provided at the center of the susceptor 217.

Next, Embodiments 1 and 2 of the present invention will be described in more detail with reference to FIGS. 5A, 5B, 6A, and 6B, which are partial enlarged schematic cross-sectional views of a portion B in FIG.

As shown in FIGS. 5A and 5B, in Embodiment 1 of the present invention, a hole is dug in the transparent quartz susceptor member 511 to form a concave portion 514, and a Si plate as an internal susceptor 520 is provided in the concave portion 514. 530 was dropped and sealed again with the transparent quartz plate 512. The Si plate 530 prevents light emitted from the lamp 500 from being transmitted. The joint 513 between the transparent quartz susceptor member 511 and the transparent quartz plate 512 has a structure in which these two members are simply combined or a structure in which these two members are welded. In the case of welding, it is preferable to make the inside vacuum to avoid the influence of thermal expansion of air. In this manner, the susceptor 217 has a structure in which the transparent quartz susceptor member 511, the transparent quartz plate 512, and the quartz susceptor 510, which is a powerful susceptor, are provided with the Si plate 530. Note that an opaque quartz susceptor member may be used instead of the transparent quartz susceptor member 511, and an opaque quartz plate may be used instead of the transparent quartz plate 512. The Si plate 530 is a split type that is divided into a plurality of sub-Si plates 531 and has a structure that suppresses warpage of the Si plate 530 and damage due to repeated thermal stress. Further, in order to prevent the radiation light from the lamp 500 from being transmitted due to the warpage of the sub Si plate 531, the upper end portion 532 and the lower end portion 533 of the adjacent sub Si plate 531 are superposed. Further, taking into account the difference in the coefficient of thermal expansion between Si and Seiyu and the warpage of Si plate 530, a lateral clearance 535 and a vertical clearance between Si plate 530 and Seiyu susceptor 510 are provided. 536 and are provided. FIG. 5A is an exploded view showing a manufacturing process of the susceptor 217, and FIG. 5B shows the susceptor 217 after the manufacturing.

Further, as shown in FIGS. 6A and 6B, in Example 2 of the present invention, as an alternative to Si, metal Nb (niobium) was kneaded into quartz and melted (melted and mixed) to produce Nb quartz. Is used as a light transmission preventing material. This material has almost the same coefficient of thermal expansion, heat resistance, and heat capacity as quartz, and is not damaged by thermal stress / coefficient of thermal expansion. Since metal material is kneaded, it is embedded in quartz and sealed by welding to prevent diffusion of Nb metal. However, it is not divided like Si in the first embodiment.

In the second embodiment of the present invention, a hole is dug in the transparent quartz susceptor member 511 to form a concave portion 514, and an Nb quartz plate 540 as an internal susceptor 520 is dropped into the concave portion 514, and the transparent quartz plate 512 And sealed. The joint 513 between the transparent quartz susceptor member 511 and the transparent quartz plate 512 has a structure welded all around. When welding, it is preferable to create a vacuum inside to avoid the effects of thermal expansion of the air. Masire, Thus, the susceptor 217 has a structure in which the Nb quartz plate 540 is provided inside the quartz susceptor 510 including the transparent quartz susceptor member 511 and the transparent quartz plate 512. In the case of Nb quartz, the amount of warpage depends on the Nb content, and the more Nb, the greater the amount of warpage.Therefore, there is a horizontal clearance 535 and a vertical direction between the Nb quartz plate 540 and the quartz susceptor 510. A clearance of 536 is provided. FIG. 6A is an exploded view showing a manufacturing process of the susceptor 217, and FIG. 6B shows the susceptor 217 after the manufacturing.

Referring to FIGS. 5B and 6B, in the first and second embodiments of the present invention, the inner end 537 of the internal susceptor 520 is configured such that the wafer 200 is placed on a transparent quartz plate 503 provided at the center of the susceptor 217. When mounted (see FIG. 4), it is provided inside the quartz susceptor 510 so as to overlap the outer peripheral portion of the wafer 200 when viewed from a direction perpendicular to the main surface of the wafer 200.

Next, an outline of a substrate processing apparatus to which the present invention is applied will be described with reference to FIG.

In the substrate processing apparatus to which the present invention is applied, a FOUP (front opening unified pod; hereinafter, referred to as a pod) force S is used as a carrier for transporting a substrate such as a wafer. In the following description, FIG. That is, the front is below the paper, the rear is above the paper, and the left and right are the left and right of the paper with respect to the paper shown in FIG.

As shown in FIG. 7, the substrate processing apparatus includes a first transfer chamber 103 having a load lock chamber structure that can withstand a pressure (negative pressure) below atmospheric pressure such as a vacuum state. The casing 101 of the first transfer chamber 103 is formed in a box shape having a hexagonal plan view and closed at both upper and lower ends. In the first transfer chamber 103, a first wafer transfer machine 112 for transferring the wafer 200 under negative pressure is installed. The first wafer transfer device 112 is configured to be able to move up and down by the elevator 115 while maintaining the airtightness of the first transfer chamber 103.

[0020] Of the six side walls of the casing 101, two of the side walls located on the front side are connected with a spare room 122 for carrying in and a spare room 123 for carrying out via gate valves 244 and 127, respectively. The load lock chambers are configured to be able to withstand a negative pressure. Further, a substrate holder 140 for a carry-in room is installed in the spare room 122, and a substrate holder 141 for a carry-out room is installed in the spare room 123. A second transfer chamber 121 used under substantially atmospheric pressure is connected to the front sides of the preliminary chamber 122 and the preliminary chamber 123 via gate valves 128 and 129. In the second transfer chamber 121, a second wafer transfer machine 124 for transferring the wafer 200 is installed. The second wafer transfer machine 124 is configured to be moved up and down by an elevator 126 installed in the second transfer chamber 121, and is reciprocated in the left-right direction by a linear actuator 132. Is configured.

As shown in FIG. 7, an orientation flat aligning device 106 is provided on the left side of the second transfer chamber 121. A clean unit (not shown) for supplying clean air is installed above the second transfer chamber 121.

As shown in FIG. 7, the housing 125 of the second transfer chamber 121 includes a wafer transfer port 134 for transferring the wafer 200 into and out of the second transfer chamber 121, A lid 142 for closing the wafer loading / unloading port and a pod orbner 108 are provided. The pod orbner 108 includes a cap for the pod 100 placed on the 1〇 stage 105 and a cap opening / closing mechanism 136 for opening and closing a lid 142 for closing the wafer loading / unloading port 134, and is mounted on the 1〇 stage 105. By opening and closing the cap of the pod 100 and the lid 142 that closes the wafer loading / unloading port 134 by the cap opening / closing mechanism 136, the pod 100 can take in / out the wafer. The pod 100 is supplied to and discharged from the IO stage 105 by an in-process transfer device (RGV) (not shown).

As shown in FIG. 7, of the six side walls of the housing 101, two side walls located on the back side are provided with a first processing furnace 202 for performing desired processing on the wafer, Second processing furnaces 137 are connected adjacent to each other. Each of the first processing furnace 202 and the second processing furnace 137 is configured by a cold wall processing furnace. Further, the remaining two side walls facing each other among the six side walls of the casing 101 are provided with a first cooling unit 138 as a third processing furnace and a second cooling unit 138 as a fourth processing furnace. The first cooling unit 138 and the second cooling unit 139 are configured so as to cool the processed wafer 200 even if the first cooling unit 138 and the second cooling unit 139 are shifted.

Hereinafter, processing steps using the substrate processing apparatus having the above configuration will be described.

[0026] The processing step is performed with 25 unprocessed wafers 200 stored in the pod 100. Transported by the in-process transport device to the substrate processing apparatus. As shown in FIG. 7, the transported pod 100 is delivered from the in-process transport device and placed on the 1 の上 stage 105. The cap of the pod 100 and the lid 142 for opening and closing the wafer loading / unloading port 134 are removed by the cap opening / closing mechanism 136, and the wafer loading / unloading port of the pod 100 is opened.

When the pod 100 is opened by the pod opener 108, the second wafer transfer device 124 installed in the second transfer chamber 121 picks up the wafer 200 with the pod 100 force, and carries the wafer 200 into the spare chamber 122. 200 is transferred to the substrate holder 140. During this transfer operation, the gate valve 244 on the first transfer chamber 103 side is closed, and the negative pressure in the first transfer chamber 103 is maintained. When the transfer of the wafer 200 to the substrate holder 140 is completed, the gate valve 128 is closed, and the preliminary chamber 122 is evacuated to a negative pressure by an exhaust device (not shown).

[0028] When the pressure in the preliminary chamber 122 is reduced to a preset pressure value, the gate valves 244 and 130 are opened, and the preliminary chamber 122, the first transfer chamber 103, and the first processing furnace 202 are communicated. Subsequently, the first wafer transfer device 112 in the first transfer chamber 103 picks up the wafer 200 from the substrate holder 140 and carries it into the first processing furnace 202. Then, a processing gas is supplied into the first processing furnace 202, and desired processing is performed on the wafer 200.

When the above-described processing is completed in the first processing furnace 202, one processed wafer 200 is unloaded to the first transfer chamber 103 by the first wafer transfer device 112 in the first transfer chamber 103. You.

[0030] Then, first wafer transfer device 112 carries wafer 200 carried out of first processing furnace 202 into first cooling unit 138, and cools the processed wafer.

When the two wafers 200 are transferred to the first cooling unit 138, the first wafer transfer device 112 transfers the wafer 200 prepared in advance to the substrate holder 140 in the preliminary chamber 122 to the first processing furnace. The wafer 200 is transferred by the operation described above in FIG. 202, a processing gas is supplied into the first processing furnace 202, and a desired processing is performed on the wafer 200.

After a predetermined cooling time in the first cooling unit 138 elapses, the cooled wafer 200 is transferred from the first cooling unit 138 to the first transfer chamber 103 by the first wafer transfer device 112. It is carried out.

[0033] The cooled wafer 200 is unloaded from the first cooling unit 138 to the first transfer chamber 103. After that, the gate valve 127 is opened. Then, the first wafer transfer device 112 transports the wafer 200 unloaded from the first cooling unit 138 to the preliminary chamber 123, and after transferring the wafer 200 to the substrate mounting table 141, the preliminary chamber 123 is closed by the gate vane rev 127. .

When the preliminary chamber 123 is closed by the gate valve 127, the inside of the preliminary exhaust chamber 123 is returned to substantially the atmospheric pressure by the inert gas. When the pressure in the preliminary chamber 123 is returned to substantially the atmospheric pressure, the gate valve 129 is opened, and the lid 142 closing the wafer loading / unloading port 134 corresponding to the preliminary chamber 123 of the second transfer chamber 121 and the IO stage 105 The cap of the empty pod 100 on which it is placed is opened by the pod opener 108. Subsequently, the second wafer transfer device 124 in the second transfer chamber 121 picks up the wafer 200 from the substrate table 141 and unloads the wafer 200 to the second transfer chamber 121, and transfers the wafer 200 to the second transfer chamber 121. It is stored in the pod 100 through the loading / unloading port 134. When the storage of the 25 processed wafers 200 in the pod 100 is completed, the cap of the pod 100 and the lid 142 for closing the wafer loading / unloading port 134 are closed by the pod opener 108. The closed pod 100 is transported from above the IO stage 105 to the next process by the in-process transport device.

By repeating the above operation, the wafers are sequentially processed. The above operation has been described by taking as an example the case where the first processing furnace 202 and the first cooling unit 138 are used.However, the case where the second processing furnace 137 and the second cooling unit 139 are used is described. The same operation is also performed for.

In the above-described substrate processing apparatus, the spare room 122 is used for carrying in and the spare room 123 is used for carrying out. However, the spare room 123 may be used for carrying in and the spare room 122 may be used for carrying out. Further, the first processing furnace 202 and the second processing furnace 137 may perform the same processing, or may perform different processing. When different processing is performed in the first processing furnace 202 and the second processing furnace 137, for example, after performing the processing on the wafer 200 in the first processing furnace 202, the processing is separately performed in the second processing furnace 137. May be performed. In addition, if the first processing furnace 202 performs the processing on the wafer 200 and then performs another processing in the second processing furnace 137, the first cooling unit 138 (or the second cooling unit 139) is used. You may make it go through.

Next, a processing furnace suitably used in the substrate processing apparatus to which the present invention is applied will be described in detail with reference to FIG. [0038] The processing furnace is indicated generally by reference numeral 202. In the illustrated embodiment, the processing furnace 202 is a single-wafer processing furnace suitable for performing various processing steps on a substrate 200 (hereinafter, referred to as a wafer) such as a semiconductor wafer. The processing furnace 202 is particularly suitable for heat treatment of a semiconductor wafer. Examples of such heat treatment include the thermal annealing of semiconductor wafers, the thermal reflow of glass made of boron-phosphorus, the high-temperature oxide film, the low-temperature oxide film, the high-temperature nitride film, doped polysilicon, and undoped polysilicon in the processing of semiconductor devices. Chemical vapor deposition to form thin films of silicon, silicon epitaxial, tungsten metal, or tungsten silicide.

The processing furnace 202 includes a heater assembly 500 composed of an upper lamp 207 and a lower lamp 223 surrounded by a rotating cylinder 279. The heater assembly 500 supplies radiant heat to the wafer 200 so that the substrate temperature becomes substantially uniform. In a preferred form, the heater assembly 500 illuminates at an emission peak of 0.95 microns, forms multiple heating zones, and provides a focused heating profile that applies more heat to the substrate periphery than the center of the wafer. Includes a heating element, such as a tungsten-halogen linear lamp 207, 223.

An electrode 224 is connected to each of the upper lamp 207 and the lower lamp 223 to supply electric power to each lamp, and the degree of heating of each lamp is controlled by a heating controller 301 controlled by a main controller 300. Being done.

The heater assembly 500 is housed in a rotating cylinder 279 mechanically connected to a spur gear 277. The rotary cylinder 279 is made of ceramic, graphite, more preferably graphite coated with silicon graphite. The heater assembly and the rotary cylinder 279 are housed in the chamber main body 227, are vacuum-sealed, and are held on the chamber bottom 228 of the chamber main body 227. The chamber body 227 can be formed from various metal materials. For example, aluminum is suitable for some applications and stainless steel for other applications. The choice of materials will depend on the type of chemical used in the deposition process and the reactivity of these chemicals with the selected metal, as will be appreciated by those skilled in the art. Typically, the chamber walls are water cooled to about 45-47 degrees Fahrenheit by a well-known circulating chilled water flow system, as is well known in the art.

[0042] The rotary cylinder 279 is rotatably held on the chamber bottom 228. Specifically, The gears 276, 277 and the power S Bouno bearing 278 are rotatably held on the channel base 228, and the spur gear 276 and the spur gear 277 are arranged so as to mesh with each other. Further, the spur gear 276 is rotated by a susceptor drive mechanism 267 controlled by a drive control unit 304 controlled by the main control unit 300, and rotates the rotary cylinder 279 via the spur gear 276 and the spur gear 277. ing. The rotational speed of the rotary base 18 is preferably between 5 and 60 rpm depending on the particular process, as will be appreciated by those skilled in the art.

The processing furnace 202 has a chamber 225 composed of a chamber main body 227, a chamber lid 226, and a chamber bottom 228, and forms a processing chamber 201 in a space surrounded by the chamber 225.

[0044] Wafer 200 is held on susceptor 217, which is a substrate holding means. The susceptor 217 has a donut shape and is supported by a rotating cylinder 279.

A gas supply pipe 232 is provided through the chamber lid 226 so that a processing gas 230 can be supplied to the processing chamber 201. The gas supply pipe 232 is connected to gas sources of gas A and gas B via an on-off valve 243 and a mass flow controller (hereinafter, referred to as MFC) 241 as a flow control means. The gas used here is an inert gas such as nitrogen, or a desired gas such as hydrogen, argon, or tungsten hexafluoride, and is used to form a desired film on the wafer 200 to form a semiconductor device. It is.

The open / close valve 243 and the MFC 241 are controlled by the gas control unit 302 controlled by the main control unit 300, and supply and stop of the gas and the flow rate of the gas are controlled.

[0047] The processing gas 230 supplied from the gas supply pipe 232 reacts with the wafer 200 in the processing chamber 201, and the remaining gas flows from the gas exhaust port 235 which is an exhaust port provided in the chamber main body 227. It is discharged out of the processing chamber via an exhaust device including a vacuum pump and the like as shown.

[0048] The processing furnace 202 also includes non-contact emissivity measurement means for measuring the emissivity (emissivity) of the wafer 200 in various manufacturing processes and calculating the temperature. The emissivity measuring means mainly includes an emissivity measuring probe 260, an emissivity measuring reference lamp (reference light) 265, a temperature detecting section, and an optical fiber-to-communication cable connecting the probe 260 and the temperature detecting section. The cable preferably comprises a sapphire optical fiber-to-communication cable. [0049] The probe 260 is rotatably provided by a probe rotation mechanism 274, and one end of the probe 260 is directed toward the wafer 200 or the reference lamp 265 serving as reference light. Further, since the probe 260 is connected to the optical fiber-to-communication cable by slip connection, the connection state is maintained even if the probe 260 rotates as described above.

That is, the probe rotation mechanism 274 rotates the emissivity measurement probe 260, whereby the tip of the probe 260 is directed substantially upward to the emissivity measurement reference lamp 265, and the probe 260 The probe 260 is turned around with respect to the second position, which is directed substantially downward toward the wafer 200. Therefore, it is preferable that the tip of the probe 260 is oriented in a direction perpendicular to the rotation axis of the probe 260. In this way, the probe 260 can detect the density of photons emitted from the reference lamp 265 and the density of photons reflected from the wafer 200. The reference lamp 265 preferably comprises a white light source that emits light having a wavelength at which light transmittance in the wafer 200 is minimized, preferably a wavelength of 0.95 microns. The emissivity measuring means described above measures the emissivity of the wafer 200 by comparing the radiation from the reference lamp 265 with the radiation of the wafer 200 power.

[0051] Since the heater assembly 500 is completely surrounded by the rotating cylinder 279, the susceptor 217, and the wafer 200, the heater assembly 500 which can affect reading by the emissivity measurement probe 260 is supplied to the processing chamber 201. There is no light leakage.

[0052] The gate valve 244, which is a gate valve, is opened, the wafer (substrate) 200 is loaded into the processing chamber 201 through the wafer loading / unloading port 247 provided in the chamber main body 227, and the wafer 200 is loaded into the susceptor 217. After being disposed above, the susceptor rotating mechanism (rotating means) 267 rotates the rotating cylinder 279 and the susceptor 217 during processing. When measuring the emissivity of the wafer 200, the probe 260 rotates so as to face the reference lamp 265 directly above the wafer 200, and the reference lamp 265 is turned on. Then, the probe 260 measures the incident photon density from the reference lamp 265. While the reference lamp 265 is on, the probe 260 rotates from the first position to the second position, and while rotating, faces the wafer 200 directly below the reference lamp 265. In this position, probe 260 measures the reflected photon density on the device side of wafer 200 (the surface of wafer 200). Subsequently, the reference lamp 265 is turned off. . While directly facing the wafer 200, the probe 260 measures the emitted photons from the heated wafer 200. According to Planck's law, the energy released to a particular surface is related to the fourth power of the surface temperature. The proportionality constant is also the product of the Stefan's Boltzmann constant and the surface emissivity. Therefore, when determining the surface temperature in the non-contact method, it is preferable to use the surface emissivity. The total hemispherical reflectivity of the device surface of the wafer 200 is calculated using the following equation, and subsequently the emissivity is obtained according to Kirchhoff's law.

(1) Wafer reflectance = reflected light intensity / incident light intensity

(2) Emissivity = (1 wafer reflectivity)

[0053] Once the emissivity of the wafer is obtained, the wafer temperature is obtained from Planck's equation. This technique is also used when the wafers are hot and in such applications the base heat radiation is subtracted before performing the above calculations. Preferably, the probe 260 remains in the second position, ie, the position facing the wafer, and always provides emissivity data when the reference lamp 265 is turned on.

[0054] As the wafer 200 is rotating, the probe 260 measures the density of photons reflected from the device surface of the wafer 200 during its rotation, providing a variable device structure that will be lithographically printed on the substrate. Measure the reflection from the average surface topology. In addition, since emissivity measurement is performed over a processing cycle including a thin film deposition process, instantaneous changes in emissivity are monitored and temperature correction is performed dynamically and continuously.

[0055] The processing furnace 202 further includes a plurality of temperature measuring probes 261 as temperature detecting means. These probes 261 are fixed to the chamber lid 226 and constantly measure the photon density emitted from the wafer 200 and the device surface under all processing conditions. Based on the photon density measured by the probe 261, the wafer temperature is calculated by the temperature detection unit 303 and compared with the set temperature by the main control unit 300. As a result of the comparison, the main control unit 300 calculates all deviations, and via the heating control unit 301, determines the amount of power supply to the plurality of zones of the upper lamp 207 and the lower lamp 223, which are heating means in the heater assembly. Control. Preferably, it includes three probes 261 positioned to measure the temperature of different portions of the wafer 200. This ensures temperature uniformity during the processing cycle.

Note that the wafer temperature calculated by the temperature measurement probe 261 is By correcting the wafer emissivity calculated by the probe 260, it is possible to detect the wafer temperature more accurately.

After the processing of the wafer 200, the wafer 200 is lifted from the susceptor other than the center together with the susceptor in the center of the susceptor 217 by a plurality of push-up pins 266, and the wafer 200 is automatically loaded and unloaded in the processing furnace 202. A space is formed below the wafer 200 so that it can be dated. The push-up pin 266 is moved up and down by an elevating mechanism 275 under the control of the drive control unit.

Note that, to one example, the processing conditions in the processing furnace 202 of the present embodiment are as follows: in forming a silicon oxide film, the wafer temperature is 1000 ° C., the gas supply amount is 5 SLM, and the processing pressure is

2

lOOOPa.

[0059] The entire disclosure content of Japanese Patent Application No. 2003-293905 filed on August 15, 2003, including the specification, claims, drawings and abstract, is incorporated herein by reference in its entirety.

[0060] Forces Shown and Described in Various Typical Embodiments The present invention is not limited to those embodiments. Therefore, the scope of the present invention is limited only by the following claims.

Industrial applicability

As described above, according to the preferred embodiment of the present invention, a susceptor capable of withstanding mass production by suppressing damage due to insufficient strength against thermal stress, deterioration of temperature control due to an increase in heat capacity, and erroneous temperature detection due to transmission of lamp light. As a result, the present invention can be particularly suitably applied to a substrate processing apparatus provided with the susceptor, which processes a semiconductor wafer, and a method of manufacturing a device using the same.

Claims

The scope of the claims

[1] a processing chamber for forming a space for processing a substrate,

A substrate mounting member for mounting the substrate,

Having a heating member for heating the substrate,

A substrate processing apparatus, wherein a member is provided inside at least a part of the substrate mounting member so as not to transmit light emitted from the heating member.

2. The substrate processing apparatus according to claim 1, wherein a member that does not transmit the radiation light is provided at a portion corresponding to an outer portion of the substrate.

[3] The substrate mounting member includes a quartz susceptor and an internal susceptor provided inside the quartz susceptor, wherein the internal susceptor is a member that does not transmit radiation emitted from the heating member, 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided in a portion corresponding to the portion.

[4] The quartz susceptor includes a quartz member having a recess and a quartz plate, and the recess is sealed with the quartz plate in a state where the internal susceptor is inserted into the recess, and the inside of the recess is in a vacuum state. 4. The substrate processing apparatus according to claim 3, wherein:

5. The substrate processing method according to claim 3, wherein the internal susceptor is provided inside the quartz susceptor with a predetermined clearance between the internal susceptor and the quartz susceptor.

6. The substrate processing apparatus according to claim 3, wherein the internal susceptor is a plate made of Si.

7. The method according to claim 6, wherein the Si plate includes a plurality of sub-plates.

[8] A part of one sub-plate of the plurality of sub-plates is provided inside the quartz susceptor in a state of being overlapped with a part of at least another sub-plate of the plurality of sub-plates. 8. The substrate processing apparatus according to claim 7, wherein the substrate is processed.

9. The substrate processing apparatus according to claim 3, wherein the inner susceptor is a plate made of Nb quartz in which Nb is fused to quartz.

10. The substrate according to claim 3, wherein the quartz susceptor is made of opaque quartz.

[11] A feature is that a part of the internal susceptor is provided inside the quartz susceptor so as to overlap with an outer peripheral portion of the substrate when viewed from a direction perpendicular to a main surface of the substrate. The substrate processing apparatus according to claim 3.

[12] further comprising at least one radiation thermometer for measuring the temperature of the device side of the substrate,

The at least one radiation thermometer is provided so as to face a device surface of the substrate when the substrate is mounted on the substrate mounting member, and the heating member is provided on the substrate mounting member. 2. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided on a side opposite to the at least one radiation thermometer with respect to the substrate when the substrate is mounted.

[13] A method for manufacturing a semiconductor device comprising a step of processing a substrate using the substrate processing apparatus according to claim 1,

Heating the substrate by the heating member,

Supplying a desired gas to the processing chamber;

Measuring the temperature of the device surface of the substrate,

Controlling the heating member based on a result of the temperature measurement of the substrate.