JP2008028305A - Substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device that surely cools a seal and a lamp tube. <P>SOLUTION: A substrate processing device 10 includes a quartz tube unit 142 which encloses a lamp unit group 88, a first opening 148 formed on one side between the lamp unit group 88 and the quartz tube unit 142, a second opening 150 formed on the other side between the lamp unit group 88 and the quartz tube unit 142, a space 152 between the first opening 148 and the second opening 150, a first cooling gas blower 174 for making a cooling gas communicate from the first opening 148 to the space 152, a second cooling gas blower 176 for making the cooling gas communicate from the second opening 148 to the space 152, and a gas control unit 120 for at least controlling switching between communication of the cooling gas from the first opening 148 to the space 152 by the first cooling gas blower 174 and communication of the cooling gas between the second opening 150 to the space 152 by the second cooling gas blower. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for processing semiconductor wafers, glass substrates and the like.

  As this type of substrate processing apparatus, one having a lamp unit provided with a plurality of lamps as heating means for heating a substrate is known. For example, it is known that air cooling gas is introduced into a gap between a through quartz tube and a lamp by an air cooling gas blower (for example, Patent Document 1).

PCT WO2005 / 083760

  However, in the above prior art, since the air cooling gas is introduced only from one end side of the through quartz tube, the temperature of the air cooling gas rises while passing through the gap between the through quartz tube and the lamp, There was a possibility that the seal part in the vicinity of the other end side would be insufficiently cooled.

  An object of the present invention is to provide a substrate processing apparatus that solves the above-described conventional problems and reliably cools a seal portion and a lamp tube.

  A feature of the present invention is that a lamp unit including a processing chamber that holds a substrate and performs a predetermined process, a filament that is disposed in the processing chamber and heats the substrate, and a lamp tube that surrounds the filament, A lamp unit group having at least one lamp; an enclosure surrounding the lamp unit group; a first opening formed on one side between the lamp unit group and the enclosure; and the lamp unit group. And the second opening formed on the other side between the enclosure, the space between the first opening and the second opening, and the space from the first opening to the space A first cooling flow device for flowing a cooling medium through the second opening, a second cooling flow device for flowing the cooling medium from the second opening to the space, and at least the first cooling flow device for transferring the cooling medium. Front from the first opening In the substrate processing apparatus and a control device for controlling switch between said and be distributed in the space the second cooling flow device is circulating in the space the cooling medium from said second opening.

  Preferably, a temperature detector provided in at least one of the vicinity of the first opening and the vicinity of the second opening is provided, and the control device is configured to output the first detector based on an output of the temperature detector. And at least one of the second cooling flow device and the second cooling flow device.

  Preferably, a first exhaust line provided on the first opening side for exhausting the cooling medium and a second exhaust provided on the second opening side for exhausting the cooling medium. Line.

  Preferably, a first sealing member provided between the first opening and the processing chamber so that the processing chamber can be decompressed, and the processing chamber so that the processing chamber can be decompressed. A second sealing member provided between the second opening and the processing chamber.

  Preferably, a first on-off valve provided in the first exhaust line and a second on-off valve provided in the second exhaust line are provided.

  Preferably, the lamp unit is formed in a rod shape.

  A second feature of the present invention is a lamp including a processing chamber for holding a substrate and performing a predetermined processing, a filament disposed in the processing chamber and heating the substrate, and a lamp tube surrounding the filament. A lamp unit group having at least one unit; an enclosure surrounding the lamp unit group; a first opening formed on one side between the lamp unit group and the enclosure; and the lamp A second opening formed on the other side between the unit group and the enclosure, a space between the first opening and the second opening, and the first opening. Provided in the vicinity of the first cooling flow device for flowing the cooling medium in the space, the second cooling flow device for flowing the cooling medium from the second opening to the space, and the first opening. A first temperature detector and the second opening; A second temperature detector provided in the vicinity of the unit, and at least when the temperature detected by the second temperature detector is equal to or higher than a preset temperature, at least from the first cooling flow device The substrate processing apparatus includes a control device that controls at least one of the first cooling device and the second cooling device so that more cooling medium flows from the second cooling flow device to the space.

  A method of manufacturing a semiconductor device according to the present invention includes a lamp unit group having at least one lamp unit including a filament disposed in a processing chamber and a lamp group surrounding the filament, and heating the processing chamber. A step of processing a substrate held horizontally in a room, and a first cooling flow device from a first opening formed on one side between the lamp unit unit and the enclosure surrounding the lamp unit group After the cooling medium is circulated in the space between the enclosure surrounding the lamp unit group and the lamp unit group, a second cooling circulation device is formed on the other side between the lamp unit group and the enclosure. And a step of circulating a cooling medium from the second opening to the space.

  According to the present invention, at least the first cooling flow device causes the cooling medium to flow from the first opening to the space between the enclosure and the lamp unit, and the second cooling flow device passes the cooling medium to the second opening. Because it has a control device that switches and controls the flow from the section to the space between the enclosure and the lamp unit, the seal section and the lamp tube can be reliably cooled, and the seal section can be melted due to excessive temperature rise. And damage to the lamp tube can be prevented.

Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows the entire substrate processing apparatus 10 according to the first embodiment of the present invention. The substrate processing apparatus 10 uses a FOUP (front opening unified pod) as a carrier for transporting a substrate.
In the following description, front, rear, left and right are based on FIG. 1, and the front of the paper shown in FIG. 1 is below the paper, the back is above the paper, and the left and right are the left and right of the paper.

  The substrate processing apparatus 10 has a first transfer chamber 12 slightly in the center and on the rear side. The first transfer chamber 12 is configured by being surrounded by a first casing 14 having a hexagonal shape in plan view, and has a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The first housing 14 is formed in a box shape with both upper and lower ends closed. A first transfer machine 16 is disposed in the first transfer chamber 12. The substrate transfer machine 16 transfers the substrate 18 under a negative pressure, and is moved up and down by the first elevator 20.

  The two side walls located on the front side of the six side walls of the first housing 14 are connected to the carry-in spare chamber 22 and the carry-out spare chamber 24 via gate valves 26 and 28, respectively. Each has a load lock chamber structure that can withstand negative pressure. Substrate platforms 30 and 32 are respectively installed in the spare chambers 22 and 24, respectively.

  A second transfer chamber 34 that can withstand substantially atmospheric pressure is connected to the front sides of the preliminary chambers 22 and 24 via gate valves 36 and 38. A second transfer machine 40 for transferring the substrate 18 is installed in the second transfer chamber 34. The second transfer device 40 is configured to be moved up and down by a second elevator installed in the second transfer chamber 34 and is configured to be reciprocated in the left-right direction by a linear actuator. Yes. An orientation flat aligning device 46 is installed on the left side of the second transfer chamber 34.

  In the second casing 50 constituting the second transfer chamber 34, a substrate loading / unloading port 52 for loading / unloading the substrate 18 to / from the second transfer chamber 34 and the substrate loading / unloading port 52 are closed. And a pod opener 56 are provided. A pod mounting table 60 on which the pod 58 is mounted is provided on the front side of the second transfer chamber 34. The pod opener 56 is provided with a cap opening / closing mechanism, and the cap opening / closing mechanism opens / closes the cap of the pod placed on the pod mounting table 60 and the above-described lid so that the substrate stored in the pod 58 can be taken in and out. To do. The pod 58 is supplied to and discharged from the pod mounting table 60 by an in-process transfer device (RGV) (not shown).

  A processing furnace 63 (a first processing furnace 64 and a second processing furnace 66, respectively) is provided on each of the two side walls located on the rear side among the six side walls of the first casing 14 described above. 68 and 70 are connected. Each of the first processing furnace 64 and the second processing furnace 66 is, for example, a cold wall type. In addition, a first cooling unit 72 and a second cooling unit 74 are connected to the remaining two opposite side walls of the six side walls of the first housing 14, respectively. The processed substrate 18 is configured to be cooled. Details of the processing furnace 63 will be described later.

  Next, processing steps when the above-described substrate processing apparatus 10 is used will be described.

  In a state where 25 unprocessed substrates 18 are stored in the pod 58, the substrate 18 is transferred to the substrate processing apparatus 10 that performs the processing process by the in-process transfer apparatus. The pod 58 thus transported is delivered from the in-process transport device and placed on the pod placement table 60. The cap of the pod 58 and the lid for opening and closing the substrate loading / unloading port 52 are removed by the cap opening / closing mechanism, and the substrate entrance / exit of the pod 58 is opened.

  When the pod 58 is opened by the pod opener 56, the second substrate transfer machine 40 installed in the second transfer chamber 34 picks up the substrate 18 from the pod 58 and carries it into the carry-in preliminary chamber 22, where 18 is transferred to the substrate table 30. During this transfer operation, the gate valve 26 on the first transfer chamber 12 side is closed, and the first transfer chamber 12 is maintained at a negative pressure. When the transfer of the substrate 18 to the substrate table 30 is completed, the gate valve 36 is closed, and the carry-in preliminary chamber 22 is exhausted to a negative pressure by an exhaust device (not shown).

  When the carry-in preliminary chamber 22 is depressurized to a preset pressure value, the gate valves 26 and 68 are opened, and the carry-in preliminary chamber 22, the first transfer chamber 12, and the first processing furnace 64 are communicated. . Subsequently, the first substrate transfer machine 16 in the first transfer chamber 12 picks up the substrate 18 from the substrate placing table 30 and carries it into the first processing furnace 64. Then, a processing gas is supplied into the first processing furnace 64 and a desired processing is performed on the substrate 18.

  When the processing is completed in the first processing furnace 64, the processed substrate 18 is carried out to the first transfer chamber 12 by the first substrate transfer machine 16 in the first transfer chamber 12.

  Then, the first substrate transfer device 16 carries the substrate 18 unloaded from the first processing furnace 64 into the first cooling unit 72 and cools the processed substrate 18.

  When the substrate 18 is transferred to the first cooling unit 72, the first substrate transfer machine 16 uses the substrate 18 prepared in advance in the substrate holder 30 of the carry-in preliminary chamber 22 as the first processing furnace 64. The substrate is transferred by the operation, a processing gas is supplied into the first processing furnace 64, and a desired processing is performed on the substrate 18.

  When a preset cooling period elapses in the first cooling unit 72, the cooled substrate 18 is carried out from the first cooling unit 72 to the first transfer chamber 12 by the first substrate transfer device 16.

  Thereafter, the gate valve 28 is opened, and the first substrate transfer machine 16 transports the substrate 18 unloaded from the first cooling unit 72 to the unloading spare chamber 24, transfers it to the substrate table 32, and then unloads it. The reserve chamber 24 is closed by a gate valve 28.

  When the carry-out preliminary chamber 24 is closed by the gate valve 28, the inside of the carry-out preliminary chamber 24 is returned to approximately atmospheric pressure by the inert gas. When the inside of the unloading preliminary chamber 24 is returned to substantially atmospheric pressure, the gate valve 38 is opened, a lid for closing the substrate loading / unloading port 52 corresponding to the unloading preliminary chamber 24 of the second transfer chamber 34, The cap of the empty pod 58 placed on the table 60 is opened by the pod opener 56. Subsequently, the second substrate transfer machine 40 in the second transfer chamber 34 picks up the substrate 18 from the substrate table 32 and carries it out to the second transfer chamber 34, and the substrate 18 in the second transfer chamber 34 is moved. The substrate is loaded into the pod 58 through the substrate loading / unloading port 52. When the storage of the 25 processed substrates 18 in the pod 58 is completed, the cap and lid of the pod 58 are closed by the pod opener 56. The pod 58 closed in this way is transported from the top of the pod mounting table 60 to the next process by the in-process transport device.

  By repeating the above operation, the substrate 18 is sequentially processed. The above operation has been described by taking the case where the first processing furnace 64 and the first cooling unit 72 are used as an example, but also when the second processing furnace 66 and the second cooling unit 74 are used. Similar operations are performed.

  In the above-described substrate processing apparatus, the spare chamber 22 is used for carrying in and the spare chamber 24 is used for carrying out, but conversely, the spare chamber 24 may be used for carrying in, and the spare chamber 22 may be used for carrying out. Moreover, the 1st processing furnace 64 and the 2nd processing furnace 66 may each perform the same process, and may perform another process. When performing another process in the first process furnace 64 and the second process furnace 66, for example, after performing a process on the substrate 18 in the first process furnace 64, another process is performed in the second process furnace 66. Processing may be performed. In the case where another processing is performed in the second processing furnace 66 after the processing on the substrate 18 is performed in the first processing furnace 64, the first cooling unit 72 (or the second cooling unit 74) is installed. You may make it go through.

  An example of the processing furnace 63 described above is shown in FIGS. The processing furnace 63 includes a chamber 80, a susceptor 82, and a lamp unit group 88 including an upper lamp unit group 84 and a lower lamp unit group 86. The chamber 80 includes a chamber lid 90 and a chamber main body 92, and the chamber main body 92 includes four chamber side walls 94 and a chamber bottom portion 96. The susceptor 82 includes a susceptor main body 82a and a support portion 82b disposed inside the susceptor main body 82a. A through hole 98 having a smaller diameter than the substrate 18 is provided inside the susceptor 82. The susceptor 82 supports the peripheral portion of the substrate 18 by the support portion 86b. The processing chamber 100 includes a chamber lid 90 and a chamber main body 92.

  A flange 102 is attached to the chamber main body 92, and the gate valves 68 and 70 described above are attached to the flange 102. A process gas supply pipe 106 is provided above the flange 102, and the process gas is supplied to the processing chamber 100 through the process gas supply pipe 106. The process gas exhaust port 108 is provided in the chamber main body 92, and the process gas in the processing chamber 100 is exhausted to the outside of the processing chamber 100 through the process gas exhaust port 108. The substrate 18 is carried into the processing chamber 100 through the gate valves 68 and 70 and mounted on the susceptor 82 by the vertical movement of the push-up pin 110. Further, the processed substrate 18 is lifted from the susceptor 82 by the push-up pin 110 and is carried out of the processing chamber 100 through the gate valve 104. The push pin 110 is moved up and down by a push pin up / down mechanism 112.

  The main control unit 114 as a control device includes a heating control unit 116, a drive control unit 118, and a gas control unit 120. The drive control unit 118 is connected to the push-up pin up / down mechanism 112 and controls the operation of the push-up pin mechanism 112. The main control unit 120 controls operations of a first cooling gas blower 174, a second cooling gas blower 176, a first on-off valve 178, and a second on-off valve 180, which will be described later, via the gas control unit 120. Further, an emissivity detector 122 and a temperature detector 124 are connected to the main controller 114.

  The processing furnace 63 of the substrate processing apparatus 10 of the present embodiment includes a non-contact type emissivity measuring unit for measuring the emissivity of the substrate 18 and calculating the emissivity. That is, the emissivity measurement unit 126 is provided on the upper portion of the chamber lid 90, and the emissivity measurement probe 128 is disposed therein. The chamber lid 90 is provided with a through hole 129 so that the emitted light from the substrate 18 can be measured by the emissivity measuring probe 128. A signal from the emissivity measurement probe 128 is sent to the emissivity detection unit 122, and the emissivity detection unit 122 obtains the emissivity and outputs it to the main control unit 114.

  The processing furnace 100 further includes a plurality of temperature measurement probes 130 as temperature detection means. Preferably, a plurality of temperature measuring probes 130 are arranged for measuring the temperatures of different portions of the substrate 18, for example, five are provided. Thereby, the uniformity of the in-plane temperature of the substrate 18 being processed is ensured. For example, five through holes 132 are provided in the chamber lid 90, and the tip portions of the temperature measurement probes 130 are inserted into the through holes 132, respectively, and the emitted light from the substrate 18 is transmitted by the temperature measurement probes 130. It can be measured. These temperature measurement probes 130 are fixed to the chamber lid 90, and always measure the density of photons emitted from the device surface of the substrate 18 under all processing conditions. A signal from the temperature measurement probe 130 is sent to the temperature detection unit 124, calculated on the substrate temperature based on the photon density measured by the temperature measurement probe 130, and output to the main control unit 114. When the main control unit 114 receives the calculation result, the main control unit 114 performs correction based on the emissivity, calculates a deviation compared with a preset temperature, and sets the upper lamp group 84 via the heating control unit 116 based on the deviation. The power supply amount to the plurality of zones of the lower lamp group 86 is controlled.

  As shown in FIG. 3, the upper lamp unit group 84 is disposed in the processing chamber 100 and includes a plurality of lamp units 134. The lamp unit 134 is made of, for example, a halogen lamp or a carbon lamp, is formed in a rod shape, and includes a filament 136 that heats the substrate 18 and a lamp tube 138 that surrounds the filament 136. The electrode sealing portion 140 is formed at both ends of the lamp tube 138, transmits electric power to the filament 136, and blocks the inside of the lamp tube 138 from the outside of the lamp 138.

  As shown in FIG. 4, the upper lamp unit group 84 is surrounded by a quartz tube unit 142 as an enclosure surrounding the upper lamp unit group 84. The quartz tube unit 142 includes a plurality of quartz pipes 144 and flanges 146 that support both ends of the quartz pipe 144, and is provided in the chamber body 92 so as to penetrate the chamber 80. The first opening 148 is formed on one side of the quartz tube unit 142 between the upper lamp unit group 84 and the quartz tube unit 142, and the second opening 150 is a lamp in the quartz tube unit 142. It is formed on the other side between the unit group 84 and the quartz tube unit 142. A predetermined gap is provided between the quartz tube unit 142 and the lamp unit 134, and a space 152 as a space is formed between the first opening 148 and the second opening 150. Yes.

  The first O-ring 154 is disposed between the quartz tube unit 142 and the chamber main body 92, more specifically, between the vicinity of the first opening 148 and the processing chamber 100, and serves as a first sealing member. Used. The second O-ring 156 is disposed between the quartz tube unit 142 and the chamber main body 92, more specifically, between the vicinity of the second opening 148 and the processing chamber 100, so that the second sealing is performed. Used as a member. The first O-ring 154 and the second O-ring 156 block the inside of the processing chamber 100 and the outside of the processing chamber 100, and the inside of the processing chamber 100 can be decompressed. A cooling water passage 157 is provided in the vicinity of the first O-ring 154 and the second O-ring 156 in the chamber body 92. Cooling water circulates in the cooling water passage 157, and the first O-ring 154 and the second O-ring 146 are cooled by the cooling water.

  A first chamber 158 and a second chamber 160 are disposed on the outer wall of the chamber body 92. The first chamber 158 is provided with a first cooling gas port 166 connected to the first cooling gas supply line 162 and a first exhaust line 170. The second chamber 160 is provided with a second cooling gas port 168 connected to the second cooling gas supply line 164 and a second exhaust line 172.

  The first cooling gas supply line 162 is provided with a first cooling gas blower 174 capable of adjusting the flow rate of the cooling gas as the first cooling flow device, and the first cooling gas blower 174 is operated. Thus, the cooling gas flows from the first opening 148 to the space 152. Further, the second cooling gas supply line 164 is provided with a second cooling gas blower 176 capable of adjusting the flow rate of the cooling gas as the second cooling circulation device, and the second cooling gas blower 176 is operated. As a result, the cooling gas flows from the second opening 150 to the space 152. The first exhaust line 170 is provided with a first on-off valve 178 that shuts off or opens the gas flowing through the first exhaust line 170, and the second exhaust line 172 has the second on-off valve 178. A second on-off valve 180 that shuts off or opens the gas flowing through the exhaust line 172 is provided.

  As shown in FIG. 2, the lower lamp group 86 is arranged in the processing chamber 100 and includes a plurality of lamp units 118, and is surrounded by a quartz tube unit 182 as an enclosure surrounding the lamp unit group 84. Yes. In the space between the lower lamp group 86 and the quartz tube unit 182, as in the upper lamp group 84, a third cooling gas blower and a second one are provided from a third opening and a fourth opening (not shown). The fourth cooling gas blower is activated, so that the third cooling gas supply line, the fourth cooling gas supply line, the third chamber, the third cooling gas port provided in the fourth chamber, and the fourth cooling are provided. The cooling gas flows from the gas port, and the cooling gas is exhausted from the third exhaust line and the fourth exhaust line via a third on-off valve and a fourth on-off valve (not shown). It has become.

  The gas control unit 120 is connected to the process gas supply pipe 106 and controls the flow rate of the process gas supplied into the processing chamber 100. The gas control unit 120 is connected to the first cooling gas blower 174, the second cooling gas blower 176, the first on-off valve 178, and the second on-off valve 180, and controls the operation of each of them. The flow rate of the cooling gas flowing through the chamber 158, the second chamber 160, the space 152, the first exhaust line 170, the second exhaust line 172, and the like are controlled. Further, the gas control unit 120 is connected to the third cooling gas blower, the fourth cooling gas blower, the third on-off valve, and the fourth on-off valve, and controls the respective operations to control the third chamber, The flow rate of the cooling gas flowing through the four chambers, the space of the lower lamp group, the third exhaust line, the fourth exhaust line, and the like are controlled.

Incidentally, the cooling gas as a cooling medium, N _2, Ar, inert gas such as mixed gas of N 2 and _Ar is used. Preferably, the cooling gas supplied from the first cooling gas port 166 and the second cooling gas port 168 may have an equivalent temperature (for example, room temperature).

FIG. 5 shows a cooling process which is one process of the method of manufacturing a semiconductor device according to this embodiment.
FIG. 5A shows the first cooling process (step 1). This first cooling step is performed during substrate processing.

  As shown in FIG. 5 (a), the gas control unit 120 includes a first cooling gas blower while a desired process is being performed on the substrate 18, that is, while electric power is supplied to the lamp unit 134. 174 (shown in FIG. 2) and the second cooling gas blower 176 (shown in FIG. 2) are operated, and the first cooling gas port 166 and the second cooling gas supply line 164 Cooling gas is supplied to the second cooling gas port 168. Further, the gas control unit 120 opens the first on-off valve 178 and the second on-off valve 180.

  The cooling gas supplied from the first cooling gas port 166 flows through the first chamber 158, the first exhaust line 170 and the first on-off valve 178, and is discharged out of the processing furnace 63. Due to the circulation of the cooling gas, the electrode sealing portion 140 and the first O-ring 154 on one side of the lamp unit 134 are cooled. Further, the cooling gas supplied from the second cooling gas port 168 flows through the second chamber 160, the second exhaust line 172, and the second on-off valve 180, and is discharged out of the processing furnace 63. Due to the flow of the cooling gas, the electrode sealing portion 140 and the second O-ring 156 on the other side of the lamp unit 134 are cooled.

  FIG. 5B shows the second cooling step (step 2). This second cooling step is performed after the substrate processing.

  As shown in FIG. 5B, after the processing on the substrate 18 is completed, the gas control unit 120 shuts off the first on-off valve 178 and stops the second cooling gas blower 176 (shown in FIG. 2). To do. As a result, the cooling gas supplied from the first cooling gas port 166 includes the first chamber 158, the first opening 148, the space 152 (between the lamp unit 134 and the quartz tube unit 142), the second Through the opening 150, the second chamber 160, the second exhaust line 172, and the second on-off valve 180, and are discharged out of the processing furnace 63. Through the circulation of the cooling gas, the heat released from the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 is discharged. Preferably, the supply of electric power to the lamp unit 134 is stopped during the second cooling step.

  FIG. 5C shows the third cooling process (step 3). This third cooling step is performed after the substrate processing.

  As shown in FIG. 5C, after performing the second cooling step for a predetermined time, the gas control unit 120 opens the first on-off valve 178 and shuts off the second on-off valve 180. Subsequently, the second cooling gas blower 176 (shown in FIG. 2) is operated, and the first cooling gas blower 174 (shown in FIG. 2) is stopped. As a result, the cooling gas supplied from the first gas port 166 passes through the second chamber 160, the second opening 150, the space 152 (between the lamp unit 134 and the quartz tube unit 142), the first The gas flows through the opening 148, the first chamber 158, the first exhaust line 170, and the first on-off valve 178, and is discharged out of the processing furnace 63. Preferably, the supply of electric power to the lamp unit 134 is stopped during the third cooling step.

  As described above, the gas control unit 120 performs control so that the flow direction of the cooling gas flowing in at least the space 152 between the lamp unit 136 and the quartz tube unit 142 is opposite to the second cooling step described above. To do. That is, the gas control unit 120 includes the first cooling gas blower 174 and the second cooling gas blower 176 so that more cooling gas flows from the second cooling gas blower 176 to the space 152 than at least the first cooling gas blower 174. The first on-off valve 178 and the second on-off valve 180 are controlled. In the second cooling step, as the fresh cooling gas supplied from the first cooling gas port 166 flows through the first opening 148, the space 152, and the second opening 150, the cooling gas is heated. As a result, the cooling efficiency decreases. For this reason, the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 increase in temperature along the route through which the cooling gas flows, but the direction in which the cooling gas flows is opposite to that in the second cooling step. By controlling, the uneven heat load is dispersed, and the heat released from the quartz pipe 144 and the lamp unit of the quartz tube unit 142 is efficiently discharged.

As described above, in the gas control unit 120, the first cooling gas blower 174 causes the cooling gas to flow from the first opening 148 to the space 152, and the second cooling gas blower 176 passes the cooling gas to the second portion. Switching between the flow from the opening 150 to the space 152 is controlled. Thereby, compared with the case where the cooling gas is circulated only from one end side of the quartz tube unit 142, the cooling effect on both sides of the quartz tube unit 142 can be improved, and the electrode sealing portions 140 at both ends of the lamp tube 138, 140, the 1st O-ring 154, and the 2nd O-ring 156 can be cooled reliably. Therefore, melting of the O-ring and damage to the lamp tube due to excessive temperature rise can be prevented.
For convenience of explanation, the description of the cooling process of the lower lamp group 86 is omitted, but the first, second, and third cooling processes are provided in the same manner as the cooling process of the upper lamp group 84 described above. Good.

FIG. 6 shows a modification of the first embodiment.
The present modification is different from the first embodiment in the second cooling process and the third cooling process.

  FIG. 6B shows the second cooling process (step 2) of this modification. This second cooling step is performed after the substrate processing.

  As shown in FIG. 6B, the gas control unit 120 shuts off the first on-off valve 178 after the processing on the substrate 18 is completed. At this time, without stopping the first cooling gas blower 174 (shown in FIG. 2) and the second cooling gas blower 176 (shown in FIG. 2), the first cooling gas port 166 and the second cooling gas port 168 Continue to supply cooling gas. As a result, the cooling gas supplied from the first cooling gas port 166 includes the first chamber 158, the first opening 148, the space 152 (between the lamp unit 134 and the quartz tube unit 142), the second Through the opening 150, the second chamber 160, the second exhaust line 172, and the second on-off valve 180, and are discharged out of the processing furnace 63. On the other hand, the cooling gas supplied from the second cooling gas port 168 flows through the second chamber 160, the second exhaust line 172, and the second on-off valve 180, and is discharged out of the processing furnace 63. Through the circulation of the cooling gas, heat released from the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 is discharged, and the first O-ring 154, the second O-ring 156, and the electrode sealing portions on both sides are discharged. 140 and 140 are reliably cooled.

  Preferably, the flow rate of the cooling gas supplied from the first cooling gas port 166 is made larger than the gas flow rate supplied from the second cooling gas port 168. In this way, the cooling gas supplied from the second cooling gas port 168 is controlled by controlling the second cooling gas blower 176 and the like to reduce the flow rate of the cooling gas supplied from the second cooling gas port 168. As a result, the flow of the space portion 152 becomes smooth without generating a stagnation portion in the space portion 152.

  FIG. 6C shows a third cooling process (step 3) of this modification. This third cooling step is performed after the substrate processing.

  As shown in FIG. 6C, after performing the second cooling step for a predetermined time, the gas control unit 120 opens the first on-off valve 178 and shuts off the second on-off valve 180. At this time, without stopping the first cooling gas blower 174 (shown in FIG. 2) and the second cooling gas blower 176 (shown in FIG. 2), the first cooling gas port 166 and the second cooling gas port 168 Continue to supply cooling gas. As a result, the cooling gas supplied from the second gas port 168 passes through the second chamber 160, the second opening 150, the space 152 (between the lamp unit 134 and the quartz tube unit 142), the first gas The gas flows through the opening 148, the first chamber 158, the first exhaust line 170, and the first on-off valve 178, and is discharged out of the processing furnace 63. On the other hand, the cooling gas supplied from the first cooling gas port 166 flows through the first chamber 158, the first exhaust line 170 and the first on-off valve 178, and is discharged out of the processing furnace 63. Through the circulation of the cooling gas, heat released from the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 is discharged, and the first O-ring 154, the second O-ring 156, and the electrode sealing portions on both sides are discharged. 140 and 140 are reliably cooled.

  Preferably, the flow rate of the cooling gas supplied from the second cooling gas port 168 is made larger than the gas flow rate supplied from the first cooling gas port 166. In this way, the cooling gas supplied from the first cooling gas port 166 is controlled by controlling the first cooling gas blower 174 and the like to reduce the flow rate of the cooling gas supplied from the first cooling gas port 166. As a result, the flow of the space portion 152 becomes smooth without generating a stagnation portion in the space portion 152.

  In the first to third cooling steps, the supply amount of the cooling gas from the first cooling gas port 166 and the second cooling gas port 168 is the same, that is, the flow rate ratio is 1: 1. Good. In this case, it is necessary to adjust the supply amount of the cooling gas from the first cooling gas port 166 and the second cooling gas port 168 during the first to third cooling steps (FIGS. 6A to 6C). Since there is no control, it becomes easy.

FIG. 7 shows a processing furnace 63 of the substrate processing apparatus 10 in the second embodiment.
A first thermocouple 184 is disposed in the vicinity of the first opening 148 formed on one side of the quartz tube unit 142, and is used as a first temperature detector. A second thermocouple 186 is disposed in the vicinity of the second opening 150 formed on the other side of the quartz unit 142, and is used as a second temperature detector. The first thermocouple 184 and the second thermocouple 186 are electrically connected to the temperature detection unit 124. The first thermocouple 184 detects the temperature in the vicinity of the first O-ring 154 and outputs the detection result to the temperature detection unit 124. The second thermocouple 186 detects the temperature in the vicinity of the second O-ring 156 and outputs the detection result to the temperature detection unit 124. The temperature detection unit 124 calculates the temperature values of the first O-ring 154 and the second O-ring 156 from the detection values output from the first thermocouple 184 and the second thermocouple 186, and calculates the calculation results. Output to the main control unit 114. The main controller 114 controls the operations of the first cooling gas blower 174, the second cooling gas blower 176, the first on-off valve 178, and the second on-off valve 180 based on the output value from the temperature detection unit 124. Control is performed via 120.

  Note that the first O-ring 154 and the second O-ring 156 are made of, for example, a fluorine-based resin, and therefore have a heat resistant temperature of about 180 to 250 ° C. On the other hand, the electrode sealing portion 140 has a heat resistant temperature of about 300 to 350 ° C. Therefore, as described above, preferably, when the first thermocouple 184 and the second thermocouple 186 are provided so as to detect the temperature in the vicinity of the O-ring 156 from the electrode sealing portion 140, the temperature in the vicinity of the O-ring is appropriately set. However, the present invention is not limited to this, and the first chamber 158 and the second chamber 160 may be embedded in the inner walls. In this case, the relationship between the temperature detected by the thermocouple installed in advance and the temperature in the vicinity of the O-ring may be acquired, and the relationship may be corrected and controlled. In short, the first thermocouple 184 and the second thermocouple 186 may be provided in the vicinity of the first opening 148 and in the vicinity of the second opening 150, respectively.

FIG. 8 shows a cooling process which is one process of the method of manufacturing a semiconductor device in the present embodiment.
FIG. 8A shows the first cooling process (step 1). This first cooling step is performed during substrate processing.

  As shown in FIG. 8 (a), the gas control unit 120 includes the first cooling gas blower while a desired process is being performed on the substrate 18, that is, while electric power is supplied to the lamp unit 134. 174 (shown in FIG. 7) and the second cooling gas blower 176 (shown in FIG. 7) are operated, and the first cooling gas port 166 and the second cooling gas supply line 164 Cooling gas is supplied to the second cooling gas port 168. Further, the gas control unit 120 opens the first on-off valve 178 and the second on-off valve 180.

  The cooling gas supplied from the first cooling gas port 166 flows through the first chamber 158, the first exhaust line 170 and the first on-off valve 178, and is discharged out of the processing furnace 63. Due to the circulation of the cooling gas, the electrode sealing portion 140 and the first O-ring 154 on one side of the lamp unit 134 are cooled. Further, the cooling gas supplied from the second cooling gas port 168 flows through the second chamber 160, the second exhaust line 172, and the second on-off valve 178 and is discharged out of the processing furnace 63. Due to the flow of the cooling gas, the electrode sealing portion 140 and the second O-ring 156 on the other side of the lamp unit 134 are cooled.

  FIG. 8B shows the second cooling step (step 2). This second cooling step is performed after the substrate processing is completed.

  As shown in FIG. 8B, the gas control unit 120 shuts off the first on-off valve 178 and stops the second cooling gas blower 176 (shown in FIG. 6) after the processing on the substrate 18 is completed. To do. As a result, the cooling gas supplied from the first cooling gas port 166 passes through the first chamber 158, the first opening 148, the space 152 (the lamp unit 134 and the quartz tube unit 142), and the second opening. 150, the second chamber 150, the second exhaust line 172, and the second on-off valve 180 are circulated and discharged out of the processing furnace 63. Through the circulation of the cooling gas, the heat released from the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 is discharged.

  FIG. 8C shows the third cooling process (step 3). This third cooling step is performed after the second cooling step described above.

  As shown in FIG. 8C, when the temperature detection value of the second thermocouple 186 detects a preset temperature (when the temperature becomes equal to or higher than the preset temperature), the gas control unit 120 The first on-off valve 178 is opened, and the second on-off valve 180 is shut off. Subsequently, the second cooling gas blower 176 is operated, and the first cooling gas blower 174 (shown in FIG. 6) is stopped. Thereby, the cooling gas supplied from the second gas port 168 is supplied to the second chamber 160, the second opening 150, the space 152 (the lamp unit 134 and the quartz tube unit 142), and the first opening 148. The first chamber 158, the first exhaust line 170, and the first on-off valve 178 are circulated and discharged out of the processing furnace 63. Thereby, the uneven heat load is dispersed, and the heat released from the quartz pipe 144 and the lamp unit of the quartz tube unit 142 is efficiently discharged.

  In this way, the first O-ring 154 and the second O-ring 154 are controlled by controlling the first cooling gas blower 174 and the second cooling gas blower 176 based on the outputs of the first thermocouple 184 and the second thermocouple 186. The temperature in the vicinity of the O-ring 156 can be kept below the heat resistance temperature of the first O-ring 154 and the second O-ring 156. Therefore, the excessive temperature rise of the 1st O-ring 154 and the 2nd O-ring 156 can be suppressed more reliably, and melt | dissolution of a seal part can be prevented.

  Next, the fourth cooling step (Step 4) will be described. This fourth cooling step is performed after the substrate processing is completed.

  While repeatedly performing the second cooling step and the third cooling step described above, the temperature detection values of both the first thermocouple 184 and the second thermocouple 186 exceeded the preset set temperature. In this case, the gas control unit 120 operates the first cooling gas blower 174 and the second cooling gas blower 176 in the same manner as in the first cooling step (shown in FIG. 8A), and the first cooling gas The cooling gas is supplied from the supply line 162 and the second cooling gas supply line 164 to the first cooling gas port 166 and the second cooling gas port 168, and the first on-off valve 178 and the second on-off valve 180 are opened. To do.

  As a result, the cooling gas supplied from the first cooling gas port 166 flows through the first chamber 158, the first exhaust line 170 and the first on-off valve 178, and is discharged out of the processing furnace 63. . Further, the cooling gas supplied from the second cooling gas port 168 flows through the second chamber 160, the second exhaust line 172, and the second on-off valve 178 and is discharged out of the processing furnace 63. The flow of these cooling gases cools the electrode sealing portions 140 and 140 at both ends, the first O-ring 154 and the second O-ring 156.

  Since the fourth cooling step can further cool the first O-ring 154 and the second O-ring 156 as compared to the second cooling step and the third cooling step described above, Sometimes done to protect the seal. When the temperature detection value of either the first thermocouple 184 or the second thermocouple 186 falls below a preset temperature, the process returns to the second cooling process or the third cooling process again, The second cooling step and the third cooling step are repeated.

FIG. 9 shows a modification of the second embodiment.
This modification is different from the second embodiment in the second cooling step and the third cooling step.

  FIG. 9B shows the second cooling step (step 2) of this modification. This second cooling step is performed after the substrate processing.

  As shown in FIG. 9B, the gas control unit 120 shuts off the first on-off valve 178 after the processing on the substrate 18 is completed. At this time, without stopping the first cooling gas blower 174 (shown in FIG. 7) and the second cooling gas blower 176 (shown in FIG. 7), the first cooling gas port 166 and the second cooling gas port 168 Continue to supply cooling gas. As a result, the cooling gas supplied from the first cooling gas port 166 includes the first chamber 158, the first opening 148, the space 152 (between the lamp unit 134 and the quartz tube unit 142), the second Through the opening 150, the second chamber 160, the second exhaust line 172, and the second on-off valve 180, and are discharged out of the processing furnace 63. On the other hand, the cooling gas supplied from the second cooling gas port 168 flows through the second chamber 160, the second exhaust line 172, and the second on-off valve 180, and is discharged out of the processing furnace 63. Through the circulation of the cooling gas, heat released from the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 is discharged, and the first O-ring 154, the second O-ring 156, and the electrode sealing portions on both sides are discharged. 140 and 140 are reliably cooled.

  Preferably, the flow rate of the cooling gas supplied from the first cooling gas port 166 is made larger than the gas flow rate supplied from the second cooling gas port 168. In this way, the cooling gas supplied from the second cooling gas port 168 is controlled by controlling the second cooling gas blower 176 and the like to reduce the flow rate of the cooling gas supplied from the second cooling gas port 168. As a result, the flow of the space portion 152 becomes smooth without generating a stagnation portion in the space portion 152.

  FIG. 9C shows a third cooling step (step 3) of this modification. This third cooling step is performed after the second cooling step described above.

  As shown in FIG. 9 (c), the gas control unit 120 detects the temperature detected by the second thermocouple 186 at a preset temperature (when the temperature is equal to or higher than the preset temperature). The gas control unit 120 opens the first on-off valve 178 and shuts off the second on-off valve 180. At this time, without stopping the first cooling gas blower 174 (shown in FIG. 7) and the second cooling gas blower 176 (shown in FIG. 7), the first cooling gas port 166 and the second cooling gas port 168 Continue to supply cooling gas. As a result, the cooling gas supplied from the second gas port 168 passes through the second chamber 160, the second opening 150, the space 152 (between the lamp unit 134 and the quartz tube unit 142), the first gas The gas flows through the opening 148, the first chamber 158, the first exhaust line 170, and the first on-off valve 178, and is discharged out of the processing furnace 63. On the other hand, the cooling gas supplied from the first cooling gas port 166 flows through the first chamber 158, the first exhaust line 170 and the first on-off valve 178, and is discharged out of the processing furnace 63. Through the circulation of the cooling gas, heat released from the quartz pipe 144 and the lamp unit 134 of the quartz tube unit 142 is discharged, and the first O-ring 154, the second O-ring 156, and the electrode sealing portions on both sides are discharged. 140 and 140 are reliably cooled.

  Preferably, the flow rate of the cooling gas supplied from the second cooling gas port 168 is made larger than the gas flow rate supplied from the first cooling gas port 166. In this way, the cooling gas supplied from the first cooling gas port 166 is controlled by controlling the first cooling gas blower 174 and the like to reduce the flow rate of the cooling gas supplied from the first cooling gas port 166. As a result, the flow of the space portion 152 becomes smooth without generating a stagnation portion in the space portion 152.

  In the first to fourth cooling steps, the supply amount of the cooling gas at the first cooling gas port 166 and the second cooling gas port 168 is equal, that is, the flow rate ratio is 1: 1. Good. In this case, it is necessary to adjust the supply amount of the cooling gas from the first cooling gas port 166 and the second cooling gas port 168 during the first to fourth cooling steps (FIGS. 9A to 9C). Since there is no control, it becomes easy.

  INDUSTRIAL APPLICABILITY The present invention can be used for a substrate processing apparatus for processing a semiconductor wafer, a glass substrate, or the like that needs to prevent an excessive temperature rise in a seal portion or a lamp unit.

1 is a plan sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. It is a schematic block diagram which shows the processing furnace used for the substrate processing apparatus which concerns on the 1st Embodiment of this invention. 1 is a schematic diagram showing a processing furnace used in a substrate processing apparatus according to a first embodiment of the present invention. It is a schematic perspective view of the quartz tube unit used for the substrate processing apparatus concerning a 1st embodiment of the present invention. The cooling process implemented by the processing furnace of the substrate processing apparatus which concerns on the 1st Embodiment of this invention is shown, (a) is a 1st cooling process, (b) is a 2nd cooling process, (c) is a 1st cooling process. It is a figure explaining the cooling process of 3. FIG. The cooling process implemented by the processing furnace of the substrate processing apparatus in the modification of the 1st Embodiment of this invention is shown, (a) is a 1st cooling process, (b) is a 2nd cooling process, (c). These are figures explaining a 3rd cooling process. It is a schematic diagram which shows the processing furnace used for the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. The cooling process implemented by the processing furnace of the substrate processing apparatus which concerns on the 2nd Embodiment of this invention is shown, (a) is a 1st cooling process and a 4th cooling process, (b) is a 2nd cooling process. (C) is a figure explaining a 3rd cooling process. The cooling process implemented by the processing furnace of the substrate processing apparatus in the modification of the 2nd Embodiment of this invention is shown, (a) is a 1st cooling process and a 4th cooling process, (b) is a 2nd (C) is a figure explaining a 3rd cooling process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 18 Substrate 63 Processing furnace 88 Lamp unit group 100 Processing chamber 120 Gas control unit 134 Lamp unit 136 Filament 138 Lamp tube 142 Quartz tube unit 148 First opening 150 Second opening 152 Space 154 First O-ring 156 Second O-ring 162 First cooling gas supply line 164 Second cooling gas supply line 166 First cooling gas port 168 Second cooling gas port 170 First exhaust line 172 Second exhaust Line 174 First cooling gas blower 176 Second cooling gas blower 178 First on-off valve 180 Second on-off valve 184 First thermocouple 186 Second thermocouple

Claims (2)

A processing chamber for holding a substrate and performing a predetermined process;
A lamp unit group having at least one lamp unit disposed in the processing chamber and including a filament for heating the substrate and a lamp tube surrounding the filament;
An enclosure enclosing the lamp unit group;
A first opening formed on one side between the lamp unit group and the enclosure;
A second opening formed on the other side between the lamp unit group and the enclosure;
A space between the first opening and the second opening;
A first cooling flow device for flowing a cooling medium from the first opening to the space;
A second cooling flow device for flowing a cooling medium from the second opening to the space;
At least the first cooling flow device distributes the cooling medium from the first opening to the space, and the second cooling flow device distributes the cooling medium from the second opening to the space. A control device for switching and controlling
A substrate processing apparatus comprising: A temperature detector provided in at least one of the vicinity of the first opening and the vicinity of the second opening;
The substrate processing apparatus according to claim 1, wherein the control device controls at least one of the first cooling flow device and the second cooling flow device based on an output of the temperature detector.

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