WO2005015596A3 - Procede de croissance localisee de nanofils ou nanotubes - Google Patents
Procede de croissance localisee de nanofils ou nanotubes Download PDFInfo
- Publication number
- WO2005015596A3 WO2005015596A3 PCT/EP2004/051567 EP2004051567W WO2005015596A3 WO 2005015596 A3 WO2005015596 A3 WO 2005015596A3 EP 2004051567 W EP2004051567 W EP 2004051567W WO 2005015596 A3 WO2005015596 A3 WO 2005015596A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- nanothreads
- creation
- nanotubes
- insulating
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0361—Tips, pillars
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0309162A FR2857954B1 (fr) | 2003-07-25 | 2003-07-25 | Procede de croissance localisee de nanofils ou nanotubes |
FR03/09162 | 2003-07-25 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005015596A2 WO2005015596A2 (fr) | 2005-02-17 |
WO2005015596A3 true WO2005015596A3 (fr) | 2006-04-06 |
WO2005015596B1 WO2005015596B1 (fr) | 2006-06-01 |
Family
ID=33561128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/051567 WO2005015596A2 (fr) | 2003-07-25 | 2004-07-21 | Procede de croissance localisee de nanofils ou nanotubes |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2857954B1 (fr) |
WO (1) | WO2005015596A2 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2909801B1 (fr) * | 2006-12-08 | 2009-01-30 | Thales Sa | Tube electronique a cathode froide |
FR2909658B1 (fr) | 2006-12-08 | 2009-01-16 | Thales Sa | Procece de fabrication de nanotubes de carbone a coeurs metalliques |
JP2010535541A (ja) | 2007-08-03 | 2010-11-25 | ボストン サイエンティフィック リミテッド | 広い表面積を有する医療器具用のコーティング |
JP5581311B2 (ja) | 2008-04-22 | 2014-08-27 | ボストン サイエンティフィック サイムド,インコーポレイテッド | 無機材料のコーティングを有する医療デバイス及びその製造方法 |
WO2009132176A2 (fr) | 2008-04-24 | 2009-10-29 | Boston Scientific Scimed, Inc. | Dispositifs médicaux comportant des couches de particules inorganiques |
WO2009155328A2 (fr) * | 2008-06-18 | 2009-12-23 | Boston Scientific Scimed, Inc. | Revêtement d'endoprothèse |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997027607A1 (fr) * | 1996-01-25 | 1997-07-31 | Robert Bosch Gmbh | Procede de production de pointes d'emission de champ |
US6034468A (en) * | 1994-08-18 | 2000-03-07 | Isis Innovation Limited | Field emitter device having porous dielectric anodic oxide layer |
EP1061554A1 (fr) * | 1999-06-15 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Source de lumière blanche à nanotubes de carbone et procédé de fabrication |
EP1069587A2 (fr) * | 1999-07-15 | 2001-01-17 | Lucent Technologies Inc. | Appareil émetteur au moyen d'un champ électrique comprenant un ensemble de conducteurs nanométriques à concentration de champ, et procédé de fabrication |
US20020006489A1 (en) * | 2000-07-07 | 2002-01-17 | Yoshitaka Goth | Electron emitter, manufacturing method thereof and electron beam device |
EP1225613A1 (fr) * | 1999-10-12 | 2002-07-24 | Matsushita Electric Industrial Co., Ltd. | Dispositif emetteur d'electrons et source d'electrons le contenant, afficheur d'image a effet de champ, lampe fluorescente et leurs procedes de production |
US20020136896A1 (en) * | 1999-03-23 | 2002-09-26 | Futaba Denshi Kogyo Kabushiki Kaisha | Method of preparing electron emission source and electron emission source |
US6525461B1 (en) * | 1997-10-30 | 2003-02-25 | Canon Kabushiki Kaisha | Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3008852B2 (ja) * | 1996-06-21 | 2000-02-14 | 日本電気株式会社 | 電子放出素子およびその製造方法 |
JP4069532B2 (ja) * | 1999-01-11 | 2008-04-02 | 松下電器産業株式会社 | カーボンインキ、電子放出素子、電子放出素子の製造方法、および画像表示装置 |
KR100482241B1 (ko) * | 2000-02-25 | 2005-04-13 | 샤프 가부시키가이샤 | 카본 나노튜브 및 그 제조 방법, 전자원 및 그 제조 방법및 표시 장치 |
-
2003
- 2003-07-25 FR FR0309162A patent/FR2857954B1/fr not_active Expired - Fee Related
-
2004
- 2004-07-21 WO PCT/EP2004/051567 patent/WO2005015596A2/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6034468A (en) * | 1994-08-18 | 2000-03-07 | Isis Innovation Limited | Field emitter device having porous dielectric anodic oxide layer |
WO1997027607A1 (fr) * | 1996-01-25 | 1997-07-31 | Robert Bosch Gmbh | Procede de production de pointes d'emission de champ |
US6525461B1 (en) * | 1997-10-30 | 2003-02-25 | Canon Kabushiki Kaisha | Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting device |
US20020136896A1 (en) * | 1999-03-23 | 2002-09-26 | Futaba Denshi Kogyo Kabushiki Kaisha | Method of preparing electron emission source and electron emission source |
EP1061554A1 (fr) * | 1999-06-15 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Source de lumière blanche à nanotubes de carbone et procédé de fabrication |
EP1069587A2 (fr) * | 1999-07-15 | 2001-01-17 | Lucent Technologies Inc. | Appareil émetteur au moyen d'un champ électrique comprenant un ensemble de conducteurs nanométriques à concentration de champ, et procédé de fabrication |
EP1225613A1 (fr) * | 1999-10-12 | 2002-07-24 | Matsushita Electric Industrial Co., Ltd. | Dispositif emetteur d'electrons et source d'electrons le contenant, afficheur d'image a effet de champ, lampe fluorescente et leurs procedes de production |
US20020006489A1 (en) * | 2000-07-07 | 2002-01-17 | Yoshitaka Goth | Electron emitter, manufacturing method thereof and electron beam device |
Non-Patent Citations (1)
Title |
---|
ROUTKEVITCH D ET AL: "NONLITHOGRAPHIC NANO-WIRE ARRAYS: FABRICATION, PHYSICS, AND DEVICE APPLICATIONS", 1 October 1996, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, PAGE(S) 1646-1658, ISSN: 0018-9383, XP002072446 * |
Also Published As
Publication number | Publication date |
---|---|
FR2857954B1 (fr) | 2005-12-30 |
WO2005015596A2 (fr) | 2005-02-17 |
WO2005015596B1 (fr) | 2006-06-01 |
FR2857954A1 (fr) | 2005-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005027233A3 (fr) | Substrats de montage d'un bloc en metal solide pour dispositifs electroluminescents a semiconducteurs, et procedes d'oxydation destine a fabriquer lesdits substrats | |
WO2006037933A3 (fr) | Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees | |
WO2005104225A3 (fr) | Procede permettant de former un dispositif a semi-conducteur dote d'une electrode de commande a encoche et sa structure | |
EP1383162A3 (fr) | Méthode de dépôt d'une couche diélectrique | |
WO2006116323A3 (fr) | Dispositifs de conversion thermoelectriques a depot cda et leurs procedes d'utilisation et de fabrication | |
WO2007025521A3 (fr) | Procede pour produire un composant semi-conducteur presentant une metallisation planaire et composant semi-conducteur | |
WO2002092505A3 (fr) | Ensemble a nanotubes et procede de fabrication d'un ensemble a nanotubes | |
TW200504924A (en) | Inductor with high quality factor and method of fabricating the same | |
WO2010025696A3 (fr) | Procédé pour produire un photoémetteur organique, et photoémetteur organique | |
WO2004055919A3 (fr) | Dispositifs electroniques | |
WO2006034432A3 (fr) | Dispositif d'electronebulisation pourvu d'une electrode integree | |
EP1115153A3 (fr) | Substrat semi-conducteur et procédé de fabrication | |
WO2006131912A3 (fr) | Microelectrode, ses applications et procede de fabrication correspondant | |
WO2005013349A3 (fr) | Croissance controlee de couches d'oxyde uniformes, en particulier de couches ultraminces | |
WO2004029326A3 (fr) | Formation de couches dans des structures a films minces | |
WO2007003826A3 (fr) | Procede de realisation de nanostructures | |
WO2006055179A3 (fr) | Procedes et structures permettant une communication electrique avec une electrode superieure pour un element semi-conducteur | |
WO2009050209A3 (fr) | Procédé de fabrication d'un élément mems sur un substrat | |
WO2005015596A3 (fr) | Procede de croissance localisee de nanofils ou nanotubes | |
WO2006081352A3 (fr) | Systeme et procede de planarisation de la region de contact d'un trou d'interconnexion a l'aide d'un procede de depot par evaporation sous vide en ligne continu | |
TW200701287A (en) | Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof | |
RU2006140760A (ru) | Гетероструктура для фотокатода | |
WO2003100859A3 (fr) | Procede de production d'un composant comprenant un ensemble conducteur hautes frequences | |
EP1094485A3 (fr) | Source d'électron à effet de champs et procédé de fabrication | |
EP1858047A4 (fr) | Procede de fabrication d'une source d'electrons |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
B | Later publication of amended claims |
Effective date: 20050803 |
|
122 | Ep: pct application non-entry in european phase |