WO2004057060A3 - Multi-chemistry electrochemical processing system - Google Patents
Multi-chemistry electrochemical processing system Download PDFInfo
- Publication number
- WO2004057060A3 WO2004057060A3 PCT/US2003/040719 US0340719W WO2004057060A3 WO 2004057060 A3 WO2004057060 A3 WO 2004057060A3 US 0340719 W US0340719 W US 0340719W WO 2004057060 A3 WO2004057060 A3 WO 2004057060A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plating
- processing system
- chemistries
- electrochemical processing
- chemistry
- Prior art date
Links
- 238000007747 plating Methods 0.000 abstract 8
- 238000000034 method Methods 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple chemistries for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantage of the desirable characteristics of each chemistry.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005502657A JP2006511717A (en) | 2002-12-19 | 2003-12-18 | Multi-chemical electrochemical processing system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43512102P | 2002-12-19 | 2002-12-19 | |
US60/435,121 | 2002-12-19 | ||
US10/438,624 US20040118694A1 (en) | 2002-12-19 | 2003-05-14 | Multi-chemistry electrochemical processing system |
US10/438,624 | 2003-05-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004057060A2 WO2004057060A2 (en) | 2004-07-08 |
WO2004057060A3 true WO2004057060A3 (en) | 2005-12-01 |
Family
ID=32600232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/040719 WO2004057060A2 (en) | 2002-12-19 | 2003-12-18 | Multi-chemistry electrochemical processing system |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040118694A1 (en) |
JP (1) | JP2006511717A (en) |
TW (1) | TW200415262A (en) |
WO (1) | WO2004057060A2 (en) |
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US20060157355A1 (en) * | 2000-03-21 | 2006-07-20 | Semitool, Inc. | Electrolytic process using anion permeable barrier |
US8852417B2 (en) | 1999-04-13 | 2014-10-07 | Applied Materials, Inc. | Electrolytic process using anion permeable barrier |
US8236159B2 (en) | 1999-04-13 | 2012-08-07 | Applied Materials Inc. | Electrolytic process using cation permeable barrier |
US20060189129A1 (en) * | 2000-03-21 | 2006-08-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using ion permeable barriers |
US20050145499A1 (en) * | 2000-06-05 | 2005-07-07 | Applied Materials, Inc. | Plating of a thin metal seed layer |
US7628898B2 (en) * | 2001-03-12 | 2009-12-08 | Semitool, Inc. | Method and system for idle state operation |
US7128823B2 (en) | 2002-07-24 | 2006-10-31 | Applied Materials, Inc. | Anolyte for copper plating |
US7223323B2 (en) * | 2002-07-24 | 2007-05-29 | Applied Materials, Inc. | Multi-chemistry plating system |
US20040134775A1 (en) * | 2002-07-24 | 2004-07-15 | Applied Materials, Inc. | Electrochemical processing cell |
US7247222B2 (en) * | 2002-07-24 | 2007-07-24 | Applied Materials, Inc. | Electrochemical processing cell |
US7473339B2 (en) * | 2003-04-18 | 2009-01-06 | Applied Materials, Inc. | Slim cell platform plumbing |
WO2004094702A2 (en) * | 2003-04-18 | 2004-11-04 | Applied Materials, Inc. | Multi-chemistry plating system |
US20070232072A1 (en) * | 2003-04-18 | 2007-10-04 | Bo Zheng | Formation of protection layer on wafer to prevent stain formation |
JP4448133B2 (en) * | 2003-07-08 | 2010-04-07 | アプライド マテリアルズ インコーポレイテッド | Electrochemical treatment cell |
US20070043474A1 (en) * | 2005-08-17 | 2007-02-22 | Semitool, Inc. | Systems and methods for predicting process characteristics of an electrochemical treatment process |
KR100651919B1 (en) * | 2005-09-29 | 2006-12-01 | 엘지전자 주식회사 | Mobile telecommunication device having function for adjusting recording rate and method thereby |
US20080163900A1 (en) * | 2007-01-05 | 2008-07-10 | Douglas Richards | Ipa delivery system for drying |
US20100084023A1 (en) * | 2008-10-07 | 2010-04-08 | Chris Melcer | Flow control module for a fluid delivery system |
US10094034B2 (en) | 2015-08-28 | 2018-10-09 | Lam Research Corporation | Edge flow element for electroplating apparatus |
US8795480B2 (en) * | 2010-07-02 | 2014-08-05 | Novellus Systems, Inc. | Control of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9624592B2 (en) | 2010-07-02 | 2017-04-18 | Novellus Systems, Inc. | Cross flow manifold for electroplating apparatus |
US10233556B2 (en) | 2010-07-02 | 2019-03-19 | Lam Research Corporation | Dynamic modulation of cross flow manifold during electroplating |
US9449808B2 (en) | 2013-05-29 | 2016-09-20 | Novellus Systems, Inc. | Apparatus for advanced packaging applications |
CN104625260B (en) * | 2013-11-06 | 2017-03-29 | 富泰华精密电子(郑州)有限公司 | Electrolytic machining device |
US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US11482434B2 (en) | 2016-10-18 | 2022-10-25 | Belting E-Town Semiconductor Technology Co., Ltd | Systems and methods for workpiece processing |
US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
CN112002752B (en) * | 2020-07-27 | 2023-04-21 | 北海惠科光电技术有限公司 | Preparation method of source and drain electrodes, preparation method of array substrate and display mechanism |
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EP1167583A2 (en) * | 2000-06-30 | 2002-01-02 | Ebara Corporation | Copper-plating liquid, plating method and plating apparatus |
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WO2002068727A2 (en) * | 2001-02-23 | 2002-09-06 | Ebara Corporation | Copper-plating solution, plating method and plating apparatus |
US6471845B1 (en) * | 1998-12-15 | 2002-10-29 | International Business Machines Corporation | Method of controlling chemical bath composition in a manufacturing environment |
US6475369B1 (en) * | 1997-04-04 | 2002-11-05 | University Of Southern California | Method for electrochemical fabrication |
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2003
- 2003-05-14 US US10/438,624 patent/US20040118694A1/en not_active Abandoned
- 2003-12-18 WO PCT/US2003/040719 patent/WO2004057060A2/en active Application Filing
- 2003-12-18 TW TW092135943A patent/TW200415262A/en unknown
- 2003-12-18 JP JP2005502657A patent/JP2006511717A/en active Pending
Patent Citations (9)
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US5273642A (en) * | 1992-04-21 | 1993-12-28 | Itt Corporation | Apparatus and method for electroplating wafers |
US6475369B1 (en) * | 1997-04-04 | 2002-11-05 | University Of Southern California | Method for electrochemical fabrication |
US6471845B1 (en) * | 1998-12-15 | 2002-10-29 | International Business Machines Corporation | Method of controlling chemical bath composition in a manufacturing environment |
US6346479B1 (en) * | 2000-06-14 | 2002-02-12 | Advanced Micro Devices, Inc. | Method of manufacturing a semiconductor device having copper interconnects |
EP1167583A2 (en) * | 2000-06-30 | 2002-01-02 | Ebara Corporation | Copper-plating liquid, plating method and plating apparatus |
WO2002009484A2 (en) * | 2000-07-21 | 2002-01-31 | Nanopierce Technologies, Inc. | Electrical component assembly and method of fabrication |
WO2002068727A2 (en) * | 2001-02-23 | 2002-09-06 | Ebara Corporation | Copper-plating solution, plating method and plating apparatus |
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Also Published As
Publication number | Publication date |
---|---|
JP2006511717A (en) | 2006-04-06 |
TW200415262A (en) | 2004-08-16 |
WO2004057060A2 (en) | 2004-07-08 |
US20040118694A1 (en) | 2004-06-24 |
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