TW200415262A - Multi-chemistry electrochemical processing system - Google Patents

Abstract

Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantages of the desirable of the desirable characteristics of each chemistry.

Description

200415262 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to an electrochemical processing system and a method for electrochemically depositing conductive materials on a semiconductor substrate. '10 15 20 Metallization of deep sub-micron dimensions is a basic technology that uses current and future manufacturing processes for integrated circuits. More specifically, in equipment and devices, such as oversized integrated devices, such as integrated circuit devices with more than 10,000 logic gates, the multilayer interconnection is located at the core of this device. These devices are generally The high filling ratio results in a yield, for example greater than about 4 ·· 丨, and the interconnected parts use conductive materials, such as copper or aluminum. Generally speaking, deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (pvD) f are used ^ These interconnected parts are not related, as the interconnected size increases and the direction ratio increases, no voids are interconnected Partially filled with traditional full mouth technology, it becomes more and more difficult. Therefore, electroplating technology 1 ECP and electrodeless plating, in the integration of integrated circuits, the high-direction ratio of deep sub-micron size for void-free filling is related to each other, and the exposure can be used as a promising Process. "C In an electrochemical electro-mineralization process, for example, deep sub-micron size ^ direction ratios are partially formed into the surface of the semiconductor substrate (or in the layer:-layer), which can be effectively filled with a conductive substance such as copper Full electrification:

5 200415262 The plating process is generally a two-stage process, in which-a seed layer (seed = 0 is first formed on the surface portion covering the semiconductor substrate, and then the surface portion of the half-V substrate is exposed to a The electrolyte solution is supplied between an electrode with a U 4 W Λ layer and a 5 copper anode provided inside the electrolyte solution. The electrolyte solution generally contains the electrode The ions on the surface of the semiconductor substrate 'and, therefore, the application of the voltage caused these ions to be pushed out of the electrolyte solution and electroplated onto the voltage-applied seed layer' to deposit-layers of the ions on the surface of the semiconductor substrate This part can be filled in. The filling of the surface part, such as conductive regions (Was) and trenches, is as fast as possible in the filling layer without forming defects, which promotes the production capacity of the semiconductor device process. It is people's hope. In any case, 'Electric ship chemistry generally increases the filling rate of a part, and often produces a thin film with poor flatness and a high defect rate. For example, the chemical material design is 15 The material is deposited quickly, tightly covering the empty part, generally increasing the thickness from the upper part of the part, and finally passing through the top of the part 2 to establish a high point relative to the surrounding film. If the substance grows too fast from the part above the part, the open part can isolate and the space can be formed. Conversely, the chemical material promotes flattening of 20 and a substantially defect-free film, generally speaking There is a slow plating rate, which keeps the upper part of the part open, but inherently slow productivity. Therefore, the specialized electrochemical plating chemistry is generally designed to balance or reconcile the wound filling element into a gap And flattening characteristics. More typically, the chemical material is generally designed to provide an acceptable portion in a plating bath. 200415262 200415262 5 Filling rate to promote productivity, but also on the condition of minimal defects. Hematology How, because the chemistry must balance the needs of the two separations according to different goals. 'The chemistry must naturally sacrifice some characteristics in each process. For example, · Increases in productivity, generally at the defect rate. In any case, providing a recording system can provide multiple chemical functions, so that the benefits of the multiple chemical characteristics can be included in the single What people hope for. □ β β i is further applied to the filling of parts and 10 miles: a system with this variety of chemical functions will also provide good & to a variety of other electroplating processes, as usual Ground: The characteristics of the electro-mineral process of the chemical electro-mineral process. For example, a variety of chemical electro-mechanical systems: the system will promote the direct application of electricity on the barrier layer " ^ v ^ ^ ^ 9 electro-chemical materials Γί, to promote adhesion to the barrier layer (generally-a slow top bond key covers the layer, further, a variety of chemistry = will also be? Alas problems.裎, 苴 中-笛 b 疋 will help an alloy electroplating, a chemical material will be used to plate the alloy layer, iron a second chemical material will be used for electroforging-different layers or other two " The previous sedimentary layer. Go further—step by step—making I blood to greatly improve the defect rate in Feng Tomb ㈣ The dressing process will be used in the 'one flute one + conductor material electric clock process, via the use of r configuration. With the smallest defect: at: a slower rate) 'then-a second chemistry: two = plating the second layer, with the smallest defect: ㈣ configure the method of incoming calls. Fuyihaidi-layer' at t Therefore, it is necessary to improve the electrochemical plating system to provide multiple chemical materials. 20 ZUU40262 It is necessary for a single electrochemical plating process. [Summary of the Invention] 10 A specific example of the present invention generally provides an electrochemical process system with 2 Provide a variety of chemical materials for-a single variety of chemical materials can be used to implement direct electricity on-barrier layer, alloy key, electric ore-thin implant layer, the best partial filling, I fill a large amount of electricity with a minimum of electricity , And / or any other electric mining process, in which multiple chemical materials can be used to obtain the benefits of each chemical property. The multiple chemical materials are generally supplied in separate electrochemical processing tanks and placed in a single electrochemical 15 Electroplating system. A specific example of the present invention further provides an electrochemical processing system, wherein the Hai system includes a system platform with a plurality of processing tanks disposed thereon, and an automatic control device is provided to perform most processing Transfer between grooves: a conductor substrate, and a manufacturer's junction is provided to communicate with the system platform, the manufacturer's junction is designed to supply a semiconductor substrate to the system platform for processing. The system further includes a fluid A conveying system for fluid communication in each of a plurality of processing tanks. The fluid conveying system is designed to supply a plurality of chemical materials to each of a plurality of processing tanks. In a specific example of the present invention, an electrochemical processing system can be further provided. Can include a machining system base with a plurality of machining groove areas on it , At least two electrochemical plating tanks are set in two processing tank areas 'at least one spin rinse drying tank is set in one processing tank area' and at least one semiconductor substrate bevel cleaning tank is set in another plus 20 200415262 work tank area. The The processing system may further include a plurality of chemical plating solution delivery systems and systems for fluid communication in at least two electrochemical processing tanks. The plurality of chemical electroless solution delivery systems generally include _ metering pumps and 电镀 plating solution additives A container, which communicates with the metering pump fluid, at least one-undoped electrolyte solution container, communicates with the metering pump fluid, and a power mineral solution distribution manifold, and-outputs the metering pump fluid AC 'and selectively communicate with individual fluids in each of at least two electrochemical power ore tanks. Ο 15, a specific example of the present invention can further provide a plurality of electrochemical processing tanks ③ placed on the system base and Electromachining system for transferring—most different electrochemical plating solutions to each of a plurality of electrochemical processing tanksA specific example of the present invention may further provide a method for applying at least one layer of the electrochemical power mine to the semiconductive county. The method generally includes arranging the semiconductor substrate in a first electrochemical power ore tank, 'for a first plating operation on a separate recording system platform, and arranging the semiconductor substrate in a second In the electroplating tank, 'on the separate plating system platform, it is used for the second key operation, supplying a first electrochemical electrochemical chemical material to the first electroplating tank' transporting the system with multiple chemical fluids' and supplying a first Dielectric chemical materials are delivered to the second electric ore tank in multiple chemical fluid delivery systems, where the first and second chemical materials are different. [Embodiment] 20

The specific example of v 1 A electricity is generally provided-an electrochemical clock system device, using materials such as metals, on a semiconductor substrate. This multi-chemical penetration is particularly inhibited + π early-plating platform, taking into account a variety of 10:... Take soil. The result is to improve the quality of the film and the system. The specific example of the present invention carefully considers that a variety of chemical systems can be applied to a variety of electrical processes, including, but not limited to, direct electrical power on the -resistance layer, alloy electricity money, and alloy electric clock. Metal ore, power ore on a thin seed layer, perfect partial filling and large amount of power ore, layers with minimum defects, or any other electrical bonding process, which can be more helpful than a chemistry In the plating process. 15 FIG. 1 is a top plan view of a specific example of an electrochemical processing system (Ecp) 100 of the present invention. The ECP system 100 generally includes a processing base 113 having an automatic control device 120 centrally disposed thereon. The automatic control device 120 generally includes one or more automatic control arms 122, 124 to support semiconductor substrates on the building. At the same time, the automatic control device 120 and the accompanying blades 122 and 124 are generally designed to stretch, turn, and move vertically, so the automatic control device 120 can insert and remove semiconductor substrates, and A plurality of processing areas 102, 104, 106, 108, 110, 112, 114, and 116 are disposed on the base 113. The ECP system 100 further includes a manufacturing plant joint (FI) 13. The FI 130 generally includes at least one Fi automatic control device 132 disposed immediately adjacent to the FI of the processing base 113. The position of the automatic control device 132 allows the automatic control device to enter the semiconductor substrate cassette 134, 20 200415262 to recover the semiconductor substrate 126 from that point, and then transfer the semiconductor substrate 126 to a processing tank 114, 116 to start implementation A processing sequence. Similarly, the automatic control device 132 can be applied to recover semiconductor substrates, from one of the processing grooves 114, 116, after 5th of a semiconductor substrate processing sequence is completed. At this time, the automatic control device 132 can transfer the semiconductor substrate 126 back to a box 134 for removal from the system 1000. In addition, the automatic control device 132 is also installed next to a forging chain chamber 135 and Fi 130. The exercise room 135 generally includes one or two exercise room positions, one of which is a cooling plate or position 136, and a heating plate or position 137, which are arranged immediately adjacent to the semiconductor substrate transfer automatic control device HO relatively recently. For example, · is between the two stations. The automatic control device 14 is generally mounted to remove the semiconductor substrate between the respective heating 137 and cooling plate 136. In general, the processing areas 10, 102, 106, 108, 110, 112, 15 114 116 can be used by any number of processing tanks in an electrochemical power mining platform. More specifically, the processing area can be designed as an electrochemical plating tank, a washing tank, a bevel cleaning tank, a rotary washing drying tank, a semiconductor substrate surface cleaning tank, an electrodeless plating tank, a metrology check station, and other tanks or processes. It can be used to connect a plating platform. 20 FIG. 2A is a partial cross-sectional view of a specific example of a processing tank (FIG. 2A does not illustrate an example of an electrochemical plating tank), which can be implemented in any processing area 100 of the processing system 100. 2, 104, 106, ι 08, 110, 114 116 are generally g. In any case, the demonstration processing system 100 is counted by β to include four electrochemical plating tanks in the processing area. ι〇2, 200415262. In any case, the present invention is not intended to be limited to any particular rule or arrangement, and various combinations and permutations can be implemented without departing from the scope of the present invention. 104, 112, and 110. The processing areas 106 and 108 are generally designed as edge bead removal or beveled clean rooms. Further, the processing areas m and 116 are generally designed as semiconductor substrate surface cleaning chambers and spin-drying drying chambers, which can be arranged in a stack, that is, one on the other

Returning to FIG. 2A, the electrochemical machining tank 102 generally includes an accessory head 220, an anode accessory 22, an inner tank 272, and an outer tank. The outer groove 240 is connected to the main body 108, and two outer grooves 272 are cut out. The internal and external slots 272, 24 are typically assembled and processed from an electrically insulating material suitable for processing chemical materials such as ceramic, plastic, plastic glass (acrylic), polycarbonate resin, polyvinyl chloride , Chlorinated modified polyvinyl chloride 'or polyvinylidene fluoride. On the other hand, the internal I5 and external grooves 272, 240 may be made of a metal, such as stainless steel, nickel, or titanium, which is covered with an insulating layer, such as Teflon®, a fluorinated high knife ? Kappa compounds, polyvinylidene fluoride, plastics, rubber, and others are compatible with electroplated bodies and can be electrically insulated by the electrodes (eg, the anode and cathode of the plating system). The inner groove 272 is typically assembled to conform to the semi-conductor substrate plating surface, and the shape of the semiconductor substrate is processed through the system, and generally has a circular or rectangular shape. In a specific detailed description, the inner groove 272 is a cylindrical ceramic tube having an internal diameter of approximately the same size, for example, or slightly larger than the diameter of the plated semiconductor substrate, in the groove 102. The outer tank 272 generally includes a 12 200415262 pipe 248 for receiving the plating fluid flowing out of the inner tank 272. The outer tank 272 is also formed with a drain pipe 218 connected to the regeneration system via the pipe 248 for processing, recycling, and / or treatment of the plating fluid used. The front end fitting 220 is fixed on an upper end fitting seat 252. The upper end 5 fitting base 252 includes a fixed post 254 and a cantilever beam arm 6. The fixed column 254 is connected to the main body portion 108 of the processing system 100, and the cantilever beam arm 256 extends laterally from the upper portion of the fixed column 254, and generally adapted to rotate perpendicular to the fixed column 254 Around the shaft to allow the front end fitting 220 device to cover, or clear the slot 24o, 272. The front end fitting 22o is generally attached to a fixing plate 260 and is disposed at the end of the cantilever beam arm 256. The lower end of the cantilever beam arm 256 is connected to an cantilever arm actuating state 268, such as an air compression cylinder, secured to the fixed post 254. The cantilever beam actuator 268 provides an important device for the cantilever beam arm 256, as the joint is between the cantilever beam arm 256 and the fixing post 254. When the 15 cantilever arm actuator 268 is retracted, the cantilever arm 256 moves the front-end fitting 220 away from the anode fitting 220 and is disposed in the inner slot 272 to provide the required space to move from the first A processing slot 102 is used to remove and / or replace the 1% pole fitting 220. When the cantilever arm actuator 268 is extended, the cantilever arm 256 moves the front end fitting 220 axially close to the anode fitting 22, placing the semiconductor substrate at the front end in a processing position of 20 Accessories 2 2 0. The δH2 standing fitting 2 2 0 can also be tilted to accommodate a semiconductor substrate to be clamped in an angle from a horizontal plane. The endless accessory 220 generally includes an accessory 250 of a semiconductor substrate holder and an actuator 258 of the semiconductor substrate accessory. The semiconductor 13 200415262 actuator 258 of the substrate accessory is fixed on the base plate 26o, and includes a handle 262 of the upper end accessory, which extends downward through the base plate 26o. The lower end of the handle 262 of the upper accessory is connected to the accessory 250 of a semiconductor substrate holder to place the accessory 25 of the semiconductor substrate holder in a processing position 5 and a semiconductor substrate loading position. in. The semiconductor substrate actuators 258 can be simultaneously installed to provide the accessory 220 that rotates the other end. In a specific detailed description, the front-end accessory 220 is rotated during an electroplating process, between about 2 rpm and about 50 rpm, and can be rotated, between about 5 nDm and about 20 rpm. The front-end accessory 220 can also be rotated in the processing tank. When the front-end accessory 220 is lowered to place the semiconductor substrate, in contact with the plating solution, and when the front-end accessory 220 is in the processing, The groove is lifted to remove the semiconductor substrate from the plating solution. The front-end accessory 22 can be rotated at a speed (for example, > 20 rpm), after which the front-end accessory 2215 is lifted by the processing slot to enhance the front-end accessory 2 2. And the semiconductor substrate removes the residual plating solution. The accessory 250 of the semiconductor substrate holder generally includes a supporting plate 264 and a cathode contact ring 260. The cathode contact ring 266 is configured to electrically contact the surface of the semiconductor substrate. Typically, the semiconductor substrate has a metal implant layer, such as copper, deposited on a portion of the side of the semiconductor substrate. A power source 246 is connected between the cathode contact ring 266 and the anode fitting 220 and provides a voltage to drive the electroplating process. 14 200415262 The support plate 264 and the cathode contact ring 266 are suspended from a suspension plate 236. The suspension plate 236 is connected to the handle 262 of the upper fitting. The cathode contact ring 266 is attached to the suspension plate 236 by a suspension bolt 238. The suspension bolt 238 provides the cathode contact ring 266, and when it comes into contact with the inner groove 272 in pairs, it moves close to the suspension plate 236, so that during the processing, the side substrate is supported by the supporting plate 264 and becomes A sandwich is interposed between the suspension plate 236 and the supporting plate 264, thereby ensuring good electrical contact between the implanted layer of the semiconductor substrate and the cathode contact ring 266. The anode fitting 220 is generally disposed at a lower portion of the inner groove 272 'below the semiconductor substrate holding fitting 250. The anode assembly 220 generally includes one or more anodes 244 and a diffusion plate 222. The anode 244 is typically disposed in the lower end of the inner tank 272, and the diffuser plate 222 is disposed at the top of the inner tank 272, interposed between the anode 244, and the semiconductor substrate holding the accessory 250 clip Between semiconductor substrates 15. The 1% pole 244 and the diffuser plate 222 are generally held in a separated space by a space 224. The diffuser plate 222 is typically attached and extends to the inner open area of the inner groove 272. The diffuser plate 222 is substantially permeable to the bond solution 'and is typically assembled from a plastic or ceramic material, such as an olefin, such as a spunbond polyester film. The diffuser plate 222 is generally effective as a fluid flow shutter plate to promote uniform flow across the surface of the semiconductor substrate u 2 to be charged. The diffusion plate 222 can also be used to reduce electrical fluctuations in the electrochemical cell, for example, to control current and improve plating consistency. On the other hand, the diffuser plate 2 2 2 is assembled from a hydrophilic plastic, such as processed poly 15 200415262 ethylene, polyvinylidene, polypropylene, olefin, or other porous or permeable substance. , Edge resistance ground impedance characteristic. The anode accessory 220 may include an exhaustible anode. 15 20 is a metal supply source for the electric money process. On the other hand, the anode 244 may be a kind of non-depletable anode, and the electric clock of the metal is supplied in the solution from the bonding solution system iu. The anode fitting 22 () may be a self-contained component with a porous ring. When the metal is used as an electroplated article, it is better to be made of the same metal, such as copper. On the other hand, the enclosure can be assembled from a porous material, such as ceramic or polymer membranes. Typical exhaustible and non-exhaustible anodes include 2 self-ground copper / doped copper as well as copper. The anode 244 is typically a metal particle, a metal wire, and / or a perforated sheet, and is typically made of the substance to be deposited on the semiconductor substrate, such as copper, aluminum, gold, silver: platinum Tungsten M copper, precious metals, or other materials that can be electrochemically deposited on a semiconductor substrate. The anode 244 may be porous, perforated, permeable, or otherwise configured to allow passage of the plating solution therethrough. On the other hand, the anode 244 may be a solid. When compared to a non-depletable anode, the depletable (eg, dissolvable) anode provides ... a gas-generating electromineral solution and causes the metal to be continuously added to the electroforge / valley solution. Demand is minimized. In a specific example described in Figure 2A, the anode 244 may be a solid copper disk. An electrolyte inlet 216 is formed through the inner tank 272 and is connected to the plating solution transfer system 丨 丨 丨. The plating solution enters the inner tank 272 through the electrolyte inlet 216, flows through or bypasses the anode fitting 220, and flows upward to the surface of the semiconductor substrate 112 200415262 at the upper end portion of the inner tank 272. The electric money solution flows through the surface of the semiconductor substrate and passes through a slit (not shown) in the cathode contact ring 266 to pass through the outer groove 24o. The voltage is supplied by the power source 246 between the semiconductor substrate (through the 5 cathode contact ring 266) and the anode 244, causing metal ions to be deposited on the semiconductor substrate from the plating fluid and / or anode on the surface. An example of a machined slot can be applied. Benefiting from the present invention, it is described in US Patent Application No. 09 / 905,513, filed on July 13, 2001, and in US Patent Application No. 10 / 〇61. No. 126, an application was filed on January 30, 2010, and both are incorporated herein by reference. Fig. 2B is a partial cross-sectional view of another specific example of a processing tank, and more specifically illustrates a typical electrochemical plating tank 200. The electrochemical plating tank 200 generally includes an outer tank 20 and an inner tank 202 arranged inside the outer tank 201. The inner tank 202 is generally configured to contain an electroplating solution for use in electroplating a metal, such as copper, onto a semiconductor substrate during an electrochemical cell process. During the plating process, the plating solution is generally continuously supplied to the inner tank 200 (for example, for a 10 liter plating tank at about 1 gallon per minute), and therefore, the plating solution The highest end of the inner groove 202 is filled up for 20 consecutive times, and flows into the outer groove 201. The full plating solution is then collected by the outer tank 201 and discharged therefrom for recycling into the inner tank 202. The plating tank 200 is generally disposed at an inclined angle, for example, the frame member 203 of the plating tank 200 is generally lifted on one side, so that the parts of the plating tank 200 are tilted, between about 3 And 17 200415262 between 5 2 and 30 degrees. Therefore, 'for the purpose of containing = the electric ore solution in the electroplating operation during the electroplating operation, the trough's high top can be extended / up to:-side of the electroplating tank 200, so that the highest top body of the electroplating tank 200 is 5 疋 horizontal 'and taking into account the continuous filling of the electric mining solution 仏 should be around the groove 202 around. 10 15 20 The frame member 203 of the electric clock slot 200 generally includes a round-shaped essential member 204 to solidify the frame portion 203. Therefore, the frame portion is raised on one side, and the higher surface of the main member 204 is generally inclined at an angle from the plane, which is equivalent to the angle of the frame member 203 with respect to the horizontal position. The main member 204 includes a wheel-shaped or dish-shaped depression formed therein. The wheel-shaped depression is configured to accommodate a dish-shaped anode member 205. The main member 204 further includes a plurality of fluid inlets / outlets 2 〇9 female placed on its lower surface. Each fluid inlet / outlet port 209 is generally configured to independently supply or discharge a fluid, or from either the anode compartment or the cathode compartment to a plating bath 2000. The anode member 205 generally includes a plurality of slits 207 formed therethrough, wherein the slits 207 are generally disposed in a parallel orientation with each other crossing the surface of the anode 205. The parallel orientation allows a dense fluid to be generated on the anode surface to flow down through the anode surface and into one of the slits 20 °. The plating tank 200 further includes a thin-film support fitting 206. The membrane support fitting 206 is generally secured to the periphery 'of a main member 204 and includes an interior area arrangement to allow fluid to pass therethrough. A thin film 208 is extended through the support 206 and operates to smoothly separate a portion of a cathode electrolyte liquid chamber and an anode electrolyte liquid chamber. The film support accessory

18 200415262 Contains -0-ring shaped oil seals, placed near the member, ': configured by the seal, firmly on the film support 206 to prevent fluid from moving from the-^^ side of the film to the the other side. A diffusion plate 210 is placed on the thin film 'and is similarly arranged to the diffusion member 5 222, which is illustrated in Fig. 2A. In the red work, it is considered that a tilted finish is used. The plating tank 200 is generally a semiconductor substrate that is immersed into a substrate 202 containing plating inside. Because the semiconductor substrate is immersed in the electric mineral fluid, it generally contains copper sulfate, gas, and one or more of most 10 organic plating additives (buffers, inhibitors, accelerators, etc.) It is configured to control the electric ore parameters, a voltage is supplied between the plant layer of a semiconductor substrate, and the anode 205 disposed in the plating tank. The voltage is generally configured to cause metal ions to move through the plating solution to be deposited on the surface of the semiconductor substrate of the cathode. In the specific example of the plating bath 2005, a separate fluid solution is supplied to a volume exceeding the film 208, and a volume below the film 208. Generally speaking, the volume exceeding the membrane is the selected section or part of the cathode where the cathode electrode or plated electrode is placed. Similarly, the volume is below the 208 of the membrane, and is generally the selected anode section or part, and at this part, the 20 anode electrode is placed. The respective anode and cathode portions are generally isolated smoothly from each other through the membrane 208 (generally an ion membrane). Therefore, the fluid is supplied to the cathode section. Generally speaking, the plating solution contains all required components to supply the plating operation. When the body is supplied to the anode section, a solution generally does not contain the plating solution. 19 200415262 5 10 15 20 f additives, which appear in the cathode compartment, for example, for example copper sulfate solution. Further detailed description of the structure and configuration of this typical electric ore tank is illustrated in Figure 2B, which can be found in U.S. Patent Application No. U) / 268,284, name, electrochemical processing tank ", Filed on October 9, 2010. Figure 3 is a summary of a specific example of an electric mining solution delivery system. = The electric mining solution delivery system is generally placed in a system that requires the solution. HK) to supply a plating solution to each processing area. More specifically, the electric clock solution delivery system is further configured to supply a different power mineral solution or chemical material to each of the processing areas. For example, 'the conveying system can supply a first electric ore solution or chemical material to the two areas m, 112' at the same time-different plating solutions or chemical materials, processing areas 102, 1 () 4. The individual electric ore solution Use: one of the electric ore tanks, and thus, the different chemistry: In addition, each other occurs. In any case, in the specific example of the present invention, more than one electric ore tank can use common chemical materials in common, that Compared with other chemical materials, it is supplied to other electric ore tanks. In this system, some features are advantageous. When it has the ability to supply multiple chemical materials to the electric power ore platform, it allows multiple chemical plating processes in individual In another specific detailed description of the present invention, a first-electric seam fluid two-separate and different second electric ore solution can be continuously supplied to another = electroplating tank. Typically ' Supply of two separate chemical materials to one that requires the electrical ore tank to be discharged and / or removed, between the individualized materials, anyway 'a mixing ratio of less than about 20 2 0 4 4 5262 ten The first plating solution to the second plating solution will not be detrimental to the characteristics of the film. '10 15 20 In more detail, the plating solution transfer system ln typically includes a multiplicity of additive supply sources 302, and at least An electrolyte supply source 304 is smoothly connected to the processing tank of each system via a manifold 332. Typically, the additive supply source 302 includes an accelerator supply source 306, a level agent supply source 308, and And an inhibitor supply source 31. '= an accelerator supply source 306 is suitable for supplying an accelerating substance, which bleeds on the surface of the semiconductor substrate, and accelerates the current at a given voltage where they are adsorbed Examples of accelerators include molecules mainly composed of sulfides. The supply source of the leveling agent is such as supply-level substances, and examples of leveling agents that work to promote planarity are long bonds w containing nitrogen. The inhibitor The supply source 310 is suitable for supplying an inhibitor to help reduce the current at the site, where they are adsorbed (the blood type 比率 = the high azimuth ratio part of the edge / angle). Therefore, the inhibitor slows the electrical Those areas, thus reducing the premature end of the section, in the second section, it is completely filled and the harmful void formation is minimized

Examples include polyethylene glycol high score PfJ, renrendoudou, mouthpieces, framed ethylene oxide and propylene oxide, or framed ethylene and propylene oxide copolymers. In addition, in order to prevent the additive w, the waste is reduced to a minimum. During each additive supply source, the next largest storage tank is connected to a smaller buffer container 316. The buffer container, which is occupied by 6 ", is filled from the storage capacity of the main building, the main storage container can be replaced and removed, and 21 厶 明 丄 5262 does not care about the operation of the fluid transfer system When the main container is replaced, ^ is the associated buffer container, which can supply the specific additive to the system. The volume of the buffer container 316 is typically much smaller than the size of the main storage container λ λ and also contains 5 additives sufficient for 10 to 12 hours of continuous operation. When the main container is empty, provide sufficient time for operation and replacement. If the buffer container cannot be rendered and continuous operation is still required, the main container will have to be replaced before emptying, resulting in significant waste of additives.

▲ In the detailed description in FIG. 3, a supply pump 312 is connected between the additive supply source 3G2 of the majority and the processing tank of the majority. The supply pump 312 generally includes at least one first to fourth entry ports 322, 326, 328. For example, the first entrance 322 is generally connected

To the accelerator supply source 306, the second inlet 324 is generally connected to the level agent supply source, and the third inlet is generally 15 to the inhibitor supply source 31. , And the fourth entrance is generally connected to.奈 electrolyte supply source 304. The output of the supply pump 3 i2 is roughly equal to the output of the supply tank 340 connected to the processing tank via the manifold 332, and when needed, the mixing of the 4 continuous supply is added here 1 (for example, at least A kind of speed, speed and leveling agent, and / or buffering agent) from the electrolyte supply source 304 ′ through the first delivery pipe 35q combined with the electrolyte is supplied to the manifold 332 to form the first or The second power mine solution. The supply pump 312, which can be used at any position, can be used to provide the amount of the selected additive to the processing tank 102: 104. The supply pump 312 can be replaced by a rotary measuring valve, a solenoid pump, a diaphragm pump, a syringe, a peristaltic pump, 22 200415262, or other positive displacement pumps. To a flow sensor. In addition, the additive can be pressurized and connected to a flow sensor, to a liquid flow controller, or by weight measurement, using a loading tank to pressurize the container, or other fluid measuring instruments, acceptable. 5 in the flow of electrochemical electricity money solution to-electricity ore tank. In a specific example, the feed pump includes a ceramic piston that rotates and reciprocates, and it moves 0.32¾ liters of a predetermined additive per revolution. In another detailed description of the invention, the fluid delivery system can be configured to supply a second completely different plating solution and a combination of additives. For example, in this specific detailed description, an electrolyte solution of a different main component (similar to the solution contained in the container 304) can be implemented to supply the processing system 100 with this capability, for example For example, the manufacturing from two separate uses a plating solution. Further, a set of additional additive containers can also be implemented to conform to the electrolyte 15 solution of the second main component. Therefore, this specific example of the present invention considers that a first chemical material (one supplied by a first manufacturer) is supplied to one or more plating tanks of the system 100, while a second chemical material ( One is supplied by a second manufacturer) to be supplied to one or more plating baths of the system. Each of the individual chemical materials generally has their own relevant additive 20, and whether or not the chemical material is supplied interactively from a separate additive supply source or source, is not beyond the scope of the present invention . In order to implement the fluid system, two separate chemical materials can be supplied, from the separated main electrolyte, one to two of the fluid delivery system is illustrated in Fig. 3 and is connected to the processing system. More specifically, 23 415262 The fluid delivery system is illustrated in FIG. 3 and is generally modified to include a second set of additive containers 302, a second pump fitting 33, and a second manifold 332 (shared Manifolds are possible). In addition, the supply source is separated, and an electrolyte 304 for an undoped solution / main component is also supplied. The additional hardware δ is again placed in the same configuration. The illustration of the hardware equipment is shown in FIG. 3. In any case, the second fluid supply system is roughly the same as the illustration or the first The fluid delivery system is similar. Therefore, with this configuration implementation, any one of the main chemical ingredients combined with any available additive can be supplied to any one or more 10 processing tanks of the system 100. The manifold 332 is typically configured to engage a valve block 334. The valves of each of the valve groups 334 can be selectively opened or closed to direct fluid from the manifold 332 to a processing tank of the plating system 100. The manifold 332 and the valve block 334 can be arbitrarily configured to support the selected fluid transfer 15 to an additional number of processing tanks. In the specific example described in FIG. 3, the manifold 332 and the valve group 334 include a sampling port 336, which allows different groups of chemical materials or components, and thus is utilized in the system. Be sampled without interrupting the process. In some specific details, it may be satisfactory to clean the supply pump 312, the output pipe 340, and / or the manifold 332. To assist this cleaning, the plating solution delivery system 111 is configured to supply at least one cleaning and / or cleaning fluid. In the specific example described in FIG. 3, the transfer system 111 of the rhenium plating solution includes a deionized water supply source 342 and a non-reactive gas supply source 344 connected to the first transfer pipe 350. 24 200415262 The non-reactive gas supply source 344 can supply a non-reactive gas, such as an inert gas, air, or nitrogen, through the first transfer pipe 350 to fill the manifold 332. Deionized water may be supplied from the deionized water supply source 342 'in addition to filling the manifold 332, or in place of a non-reactive gas. Electrolyte from this electrolyte supply source 304 can also be used as a cleaning medium. ^ A second transfer pipe 352 is T-shaped, between the first gas transfer pipe 350 and the supply pump 312. A cleaning fluid containing at least one electrolyte, deionized water, or a non-reactive gas may be transferred from their respective sources 10, 304, 342, 344, from the first transfer tube 35o, through the second gas A transfer pipe 352 is passed to the supply pump 312. The cleaning fluid is directed through the supply pump 312 and out through the output pipe 34o to the manifold 332. The valve block 334 typically directs the cleaning fluid through a discharge port 338 and out to the recovery system 232. This variety of other compartment doors, 15 control valves, and other flow control instruments have not been described and / or shown for reasons of brevity. In a detailed description of the invention, a first chemical material may be supplied to the manifold 332, which causes a partial filling of copper on the semiconductor substrate. The first chemical material may include, between about 30 and about ^ g / 20 liters of copper, between about 55 and about 851) 1) 111, between about 10,000 bucks and about 40 g / liter of acid, Accelerators between about 4 and about 75 ml / L, inhibitors between about 1 and about 5 ml / L, and no leveling agents. The first chemical material is transferred from the manifold 332 to a first plating bath 102 'to enable partial placement on the semiconductor substrate' to substantially 25 200415262 metal. When the first chemical material generally does not completely fill the part and has a naturally slow deposition rate, the first chemical material can most effectively improve the gap filling work and the proportion of defects in the deposited layer. A second chemical material is composed of a different chemical material, from which the first chemical material can be supplied to other plating tanks on the system 100, via the manifold 332, wherein the second chemical material is configured to A large amount of planar copper is deposited on the semiconductor substrate. The second chemical material, for example, may contain copper between about ^ 35 and about 60 g / L, gas between about 60 and about 80 ppm, gas between about 20 and about 40 g / L Acids, accelerators between approximately 4 φ 10 and approximately 7.5 liters / liter, inhibitors between approximately i and approximately 4 ml / liter, and leveling agents between approximately 6 and approximately 10 ml / liter.忒 The first chemical material is transferred from the manifold 332 to a second electroplating tank, so as to be competent for a large number of metal deposition processes, to complete the deposition of the gold layer during the gap filling, and to flatten the deposition steps to Fill the remaining 15 parts of the gap. Since the second chemical material generally fills the gap i 2, the second chemical material can most effectively improve the planarization of the deposited material without greatly affecting the productivity of the semiconductor substrate. therefore,

In these two steps, different chemical material deposition processes allow fast deposition and good W W flatness of the deposited film. Tian uses a processing tank that requires an anolyte solution, such as the processing t 200 of FIG. 2B. The plating solution transfer system generally includes an anolyte fluid circuit 380, which is an inlet ⑽ connected to the power ore tank. The Θ anode electrolytic shell fluid circuit can contain-most of the additive supply source 382 'is connected to a manifold 386 with a supply pump 384, which allows the additive (Code 26 200415262 not used) to be selectively metered from a One or more supply sources 382, combined with an anolyte in a manifold 386, to those processing tanks (eg, the tank 200) require the anolyte solution during the plating process. The anolyte may be supplied from a separate anolyte supply source 5. ", Fig. 4 depicts a specific example of a processing slot 400 configured to remove deposition material from an edge of a semiconductor substrate 402. The processing slot 400 includes a housing 404, and a semiconductor substrate chuck 406 is provided in This is deposited. The semiconductor substrate chuck 406 includes a plurality of arms, shown as 408A-C, extending from a central 10 axis 410. Each arm 408A-C contains a semiconductor substrate holder 412 is arranged at the end of the end of the boom. The central shaft 41 is connected to a motor 416 by a shaft 414 and is arranged outside the cover 404. The motor 416 is suitable for rotating the collet 406 and during processing A semiconductor substrate 402 disposed thereon. During processing, the semiconductor substrate 402 is rotated when a 15-cent coin is conveyed 'from a coin source supply 418 to the edge of the semiconductor substrate. The etching The agent is typically transferred to the edge of the semiconductor substrate and disposed inside the housing 404 through a plurality of upper nozzles 420. In one orientation, it directs the etchant to flow therefrom in a radial direction. In the outer direction, facing the semiconductor The surface of the substrate. The processing groove 400 may also contain a plurality of lower nozzles 422, which are connected to the etchant supply source 418, and are adapted to guide the etchant to the edge of the semiconductor substrate. On the side of the semiconductor substrate, opposite to the upper nozzle 420. The etchant is typically transferred to the semiconductor substrate 402 when the semiconductor substrate is rotated between about 100 to 1,000 rpm The nozzles 420, 422 are typically 27 415262 = to guide the tincture, in the semiconductor substrate, in a generally tangential, direction, typically at an angle of about 10 to 70 degrees, or another In one aspect, ^ is between approximately urn and 30 degrees, where the angle is defined as being between the surface of the v-body substrate and the direction or longitudinal axis of the fluid flow or dispersion nozzle. In a specific example, The coining agent is composed of an acid and an oxidizing agent, such as sulfuric acid, nitric acid, citric acid, or phosphoric acid and hydrogen peroxide. The deposited copper is removed, and the area excluded from the semiconductor substrate (in general, the The outer ring on the surface of a semiconductor substrate Generally, it is about 2mm or 3mm wide). 10 After the material is deposited, it will be removed from the edge of the semiconductor substrate, and deionized water or other cleaning agents are supplied through the nozzles 42 and 422 to 淸. Wash the surface of the semiconductor substrate. The semiconductor substrate 40 is typically rotated at approximately 200 rpm to remove the etchant and deionized water from each of the semiconductor substrate 40 and the lower surface. And other impurities. 15 The various fluids are dispersed during processing, are discharged from the cover 400, pass through a mouth 424, and are formed in the bottom of the cover 400. Two processing tanks are configured, To remove the deposited material, from the edge of the semiconductor substrate, from which the present invention can be applied, is described in US Patent Application No. 09 / 350,212, filed on July 9, 1999, and In US 20 Patent Application No. 09 / 614,406, an application was filed on July 12, 2000, and both are incorporated herein by reference in their entirety. FIG. 5 is a partial cross-sectional view of a processing tank 500 device for rotating, washing, and drying a semiconductor substrate 502 after processing. The processing slot 500 includes a cover 504 having a semiconductor substrate chuck 506 configured therein. 28 200415262 The semiconductor substrate chuck 506 includes a plurality of arms, shown as 508A-C, extending from a central axis 510. Each boom 508A-C includes a semiconductor substrate holder 512 and is disposed at the end of the end of the boom. The central shaft 5 12 is connected to a motor 5 16 by a shaft 5 14 and is arranged outside the cover 5504. The motor 516 is adapted to rotate the chuck 506 and the substrate 502 disposed thereon during processing. During processing, the semiconductor substrate is rotated, when a cleaning agent, such as deionized water or alcohol, is transferred from a fluid supply source 518 to the upper end of the semiconductor substrate 502, from a majority of the top The nozzle 520 is arranged above the chuck 506 and inside the cover 504. The back surface of the semiconducting 10-body substrate 502 is processed, dispersed from a plurality of lower nozzles 522 using at least one cleaning agent or a dissolving agent, disposed under the chuck 506, and connected to The fluid supply source 518. Examples of the dissolving agent include hydrochloric acid, sulfuric acid, phosphoric acid, and especially hydrofluoric acid. The fluid is typically delivered to the semiconductor substrate when the semiconductor substrate rotates between about 4 and about ⑼ 15 rpm. After the substance is deposited, it is removed from the edge of the semiconductor substrate. The deionized water or other cleaning agent is supplied and passed through the nozzles 520, 522 to clean the surface of the semiconductor substrate. The semiconductor substrate 502 is typically rotated at about 100 to about 5,000 rpm to dry the semiconductor substrate, when viewed from the respective upper and lower surfaces of the semiconductor substrate 502 Remove liquids and other impurities. The various fluids are dispersed during processing, flow out of the cover 504, pass through a mouth 524, and form in the bottom of the cover 504. A processing tank is configured to clean and dry the semiconductor substrate, and it can be applied to benefit from the present invention, which is described in U.S. Patent No. 29 6,29,865, and incorporated in 2001. All the Chinese leaders approved on the 8th, it is here with reference to the power 4Γ: 'The detailed description of the present invention, in general, provides -5 medium: most of the electrolytic cells, the majority of the-single-combined in-from The chemical materials to the electrode ... the tail plating system can successfully supply four independent ... more specifically, for example, suppose the invention of the fluid transfer control system: two, one, first. On ’then the four electricians ^ power supply — different chemical materials to 1. Mainly ==. The different chemical materials may contain solutions of various configurations, and may include various agents / agents at various concentrations 'including the lack of a selected platform to add several daggers capable of poetry to a single platform' beneficial 15 s of semiconductor manufacturing process. For example, the ability to provide a variety of chemical materials to most plating baths on a single flat △, taking into account the benefits of the positive characteristics of the material on a one-to-one port, in most of the plating baths on the school floor. 20 i filling ft, for example, 'for partial filling and a large number of Qiu. ° 5 — the first — electric mine solution or chemical materials can be adapted to the ::: 元 ί process (less defects, but slow The deposition rate process), the two-speed IΓ grain solution can be suitable for a part of a large number of filling processes (-more == product process' with this first process, it can be implemented once the part filling). In addition,-a variety of chemical power mining systems will promote the promotion of two "on" as-the first electroplating chemical material can be used to promote the adjunct ^ a-z, | * to the early layer of resistance Then, a second chemical material 30 200415262 material can be used for electroplating—the second material covers the top of the barrier layer, and is filled with a “material shell layer” in the question. Further, _ Zi Yue plating process, HH system will also help-alloy electricity: Germany /,-Yi Yi chemical materials can be used to plate the alloy layer, Γ =: chemical materials can be used in electricity Ore-different layers or other alloys: 'after the top of the previous sedimentary layer. Further,-a variety of chemistry == is greatly improved by Γ: also improves the defect ratio in the semiconductor substrate.

-Layer 'followed by extremely small defects' and then- a second chemical chemical material is arranged to cover the first layer with: ore-second layer', with extremely small defects, in a method of perfect productivity. When the foregoing description of the specific examples of the present invention is guided, further and further specific examples of the present invention can be conceived without departing from the basic scope, and the scope is therefore determined by the following patent scope . [Schematic description]

In order to make the above listed features of the present invention understandable in detail, a more detailed description of the present invention, a brief summary of the above, can be described in detail with reference materials, and some parts are illustrated with additional diagrams. 20 . It is to be noted that the specific detailed description of the additional illustration is only a typical specific example of the present invention, and is not considered to limit the scope thereof. For the present invention, other specific changes having the same utility may be allowed. . 31 415262 ° is a top plan view of a specific example of an electrochemical clock system of the present invention. Figure 2A is a partial cross-sectional view of a specific example of an electrochemical machining tank

TpC 〇 5 FIG. 2B is a partial cross-sectional view of another specific example of an electrochemical machining tank. 7 \\ 〇 FIG. 3 is a schematic illustration of a specific example of a key solution delivery system. FIG. 4 is a partial cross-sectional view of a specific example of a processing slot device to remove a 10-deposit material from the edge of a semiconductor substrate. Fig. 5 is a partial cross-sectional view of a specific example of a processing tank device for rotating, rinsing, and drying a semi-conductive substrate. [Illustration of drawing number] 15 Electrochemical processing system 100 Conveying system 111 Processing area 102, 104, 106, 108, 110, 112, 114, 116 Semiconductor substrate 112, 126 Processing base 113 Automatic control device 120 Blade 122, 124 Automatic control arm 122,124 Manufacturer's joint 130 Automatic manufacturer's joint 132 Box 134 Position 137 Plating tank 200 Exercise room 135 Transfer automatic control unit 140 Processing tank 200 32 200415262 Outer tank 201, 240 Inner tank 202,272 Frame member 203 Main components 204 Anodes 205, 244 Supports 206 Slots 207 Membrane 208 5 Inlet / Exhaust 209 Hot Fitting 210 Slot 214 Electrolyte Inlet 216 Drain Pipe 218 Anode Fitting 220 Diffuser 222 Space 224 System 232 Suspension Plate 236 10 Power Supply 246 Piping 248 Accessories for brackets 250 Upper fitting seat 252 Fixing post 254 Cantilever beam arm 256 Fitting actuator 258 Fixing plate 2 6 0 Upper fitting handle 262 Support plate ring 264 15 Cathode contact ring 266 Arm actuator 268 Additive Supply source 302 Electrolyte supply source 304 Accelerator supply source 306 Leveling agent supply source 308 Inhibitor supply Source 310 Pump 312 Anode electrolyte supply 388 Container 314,316 20 Inlet 322,324,326,328 Output 330 Pump accessories 330 Manifold 332 Valve group 334 α 336

33 200415262 Discharge port 338 Water supply source 342 Conveyor pipe 350,352 Supply pump 384 5 Processing tank 400,500 Cover 404,504 Arm 408A-C, 508A-C clip 412,512 Motor 416,516 10 Nozzle 420,422,520,522 Semiconductor substrate 502 Output tube 340 Gas supply source 344 Supply Source 382 Anode electrolyte supply source 388 Semiconductor substrate 402 Chuck 406,506 Center axis 410,510 Shaft 414,514 Etchant supply 418 Port 424,524 Fluid supply source 5 1 8

34

Claims (1)

200415262 Scope of patent application: 1 · A kind of electrochemical processing system, including ·· system, 'Fengping σ, with a plurality of electrochemical plating tanks set on it · 5: at least-a kind of automatic control device, set to be used in The plurality of acoustic transfer substrates are transferred between the semiconductor substrates; and, each fluid flow system 'and each of the plurality of electroplating baths, the fluid transfer system is not able to perform any work @ 夕 爪 体 父 f 、 系 、、 死The sigh meter supplies each of a plurality of electroplating chemistries with multiple machining slots.何 # 到此 10 2 · Electrochemical processing as described in item i of the patent application scope_ The fluid transfer system includes: ㈢ one of the first plurality of additive supply sources; Each—a stream. An un-doped electrolyte supply source machine, a stream, and a Lipu fluid are fed with 15 pieces of ^ at the input and with the metering pump and the — the electroplating tanks. Six _, Han Chu and the child double L / claw body parent flow, the manifold is designed with chemical materials to one office, buried + 1 ♦ one of the plurality of plating tanks selected by a specific ten j. 3. As described in item i of the scope of the patent application-the second plurality of additive supply sources is s' more than 20 supply sources, the first-葙 天 卞The quality supply source will be able to use # # β% 牌 ^ & —Undoped electricity, several electric money slots fluid exchange. Optionally with the 4. The source of several additives as described in item 2 of the scope of the patent application includes: /, the first compound 35 200415262 first source 'to supply an electrochemical plating accelerator; The first supply source is used to supply an electrochemical power leveling agent; and the second supply source is used to supply an electrochemical plating inhibitor. 5. The device according to item 2 of the scope of patent application, wherein the first plurality of additive supply sources further comprises: at least one large additive container; and at least one buffer container having a volume less than the large additive capacity And communicate with a large number of additive containers and the metering pump fluid. 106. The electrochemical machining tank described in item 1 of the scope of patent application, further comprising at least one exercise room communicating with the system platform. 7. The electrochemical processing system according to item 丨 of the scope of the patent application, which is designed to supply an anode electrolyte solution to an anode chamber of a 4 electric ore tank and an anode chamber and -A catholyte solution to the cathode 15-a cathode compartment. 8 · Electrochemical processing system, including: a processing system base having a plurality of processing tank areas, · at least two electrochemical plating tanks are set in two processing tank areas, and at least one rotary rinse drying tank is set in one processing Groove area; 20 1 less material conductor substrate slant cleaning grooves are not placed in a processing area; and a plurality of chemical plating solution delivery systems are in fluid communication with at least two electrochemical processing tanks, the plurality of chemical electrologging solutions The transfer system includes: a metering pump; 36 200415262 flowing a plurality of plating solution additive containers in fluid communication with the metering pump 5 10 15 at least one first in fluid communication; and an undoped electrolyte solution containing a plating solution distribution manifold Tube flow 'and selectively communicate with the at least fluid. Device and the metering pump 'and the output fluid of a metering pump are delivered to an electrochemical plating tank. Each of them requires the electrochemical plus m described in item 8 of the patent scope. Several plating solution additive containers, including a flushing capacity. ==, the plutonium container and the metering pump flow = ° The electrochemical processing system described in item 8 of the monthly patent scope, wherein the meter pump includes a plurality of fluid inputs and: The fluid transport pump is designed to mix and combine the fluid components with a predetermined ratio of the internal fluid input: the fluid output and the fluid composition with a predetermined ratio. Of a mixture. > The electrochemical processing system as described in item 8 of the scope of the patent application, wherein the plurality of electrochemical power ore solution delivery systems further include a second undoped electrolyte solution container in communication with the metering pump fluid, the A second undoped electrolyte solution container of 20 2 is designed to supply a second undoped electrolytic solution, which is different from a first undoped electrolyte contained in the at least one first undoped electrolyte solution container. Electrolyte. 37 200415262 12 · According to the electrochemical processing system described in item 8 of the scope of patent application, the plurality of electrochemical electro-mineral solution delivery systems in agriculture are designed to supply at least: two different electroplating chemical materials to the at least two Electrochemical plating bath. 13. According to the electrochemical processing system described in item 8 of the scope of the patent application, the multiple chemical power mineral solution delivery system in agriculture is designed to supply a cathode power mineral solution to a cathode region and an anode of the electrochemical clock slot The electric ore is dissolved in an anode region of the electrochemical clock slot. 14. A method for electrochemical electroplating of at least one layer on a semiconductor substrate, comprising: 15 20 disposing the semiconductor substrate in a first-electrochemical electrosink tank on a single electro-mineral system platform As a first electroplating operation; arranging the semiconductor substrate in the second electric ore tank on a single key system platform as a second electroplating operation; / fluid communication with the system platform with a setting The plurality of chemical fluid transfer systems supply a first-electrochemical electro-mineral chemical material to the first electric ore tank; and an ancestral / early seed chemical transfer system to supply a second electrochemical electro-chemical chemical material to the second The materials in the electric ore tank are different. And the second electroplating chemical material The method according to item 14 of the scope of the application, wherein the first electrochemical electroplating chemical material contains different main components of the electro-mineral solution. 16. The method according to item 14 of the scope of application for a patent, wherein the first electrochemical electrochemical material has different additive concentrations. 38 200415262 and ι ^ Γ _14 materials, ™ one by one: Electricity: The electric clock chemical material is a suitable gap to fill the chemical material to fill the chemical material Γ The second electrochemical electric clock chemical material is-the appropriate amount Fill 5 10 15 chemical electromineral chemical materials :: two methods, in which the -electricity: fill the second electrochemical electrochemical mineral material is-the appropriate amount: know to fill the planarization chemical material. 19 · If the scope of the patent application for chemical plating is 恰当 -appropriate = electrical / == the first—the electro-distance of the second electrochemical plating chemical material is—-in accordance with item 14 of the scope of patent application; = Learning materials. The semiconductor substrate is interposed between the first method and the electric power method, and further includes flushing. 21 of the second electroplating operation, such as the 20th in the patent application scope, the semiconductor substrate is interposed between the first and the second spin operation. &Quot; Hei Di Yi plating 22 · If the 14th plating operation in the scope of patent application is-copper electroplating process, and its "buff method", where the -20th gold plating process is used. In 14 places, the plating operation includes a defect reduction plating process. The method 'where the first electric 39