WO2004039132A3 - Procede destine au traitement de surface par micro-ondes et par le plasma a vide utilisant la resonance electronique cyclotronique - Google Patents

Procede destine au traitement de surface par micro-ondes et par le plasma a vide utilisant la resonance electronique cyclotronique Download PDF

Info

Publication number
WO2004039132A3
WO2004039132A3 PCT/RU2003/000425 RU0300425W WO2004039132A3 WO 2004039132 A3 WO2004039132 A3 WO 2004039132A3 RU 0300425 W RU0300425 W RU 0300425W WO 2004039132 A3 WO2004039132 A3 WO 2004039132A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
surface processing
magnetic
ion
electron
Prior art date
Application number
PCT/RU2003/000425
Other languages
English (en)
French (fr)
Other versions
WO2004039132A2 (fr
Inventor
Valery Viktorovich Koshkin
Original Assignee
Valery Viktorovich Koshkin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valery Viktorovich Koshkin filed Critical Valery Viktorovich Koshkin
Publication of WO2004039132A2 publication Critical patent/WO2004039132A2/ru
Publication of WO2004039132A3 publication Critical patent/WO2004039132A3/ru

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32678Electron cyclotron resonance
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
PCT/RU2003/000425 2002-10-18 2003-10-01 Procede destine au traitement de surface par micro-ondes et par le plasma a vide utilisant la resonance electronique cyclotronique WO2004039132A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2002127839/15A RU2223570C1 (ru) 2002-10-18 2002-10-18 Устройство для микроволновой вакуумно-плазменной с электронно-циклотронным резонансом обработки поверхности
RU2002127839 2002-10-18

Publications (2)

Publication Number Publication Date
WO2004039132A2 WO2004039132A2 (fr) 2004-05-06
WO2004039132A3 true WO2004039132A3 (fr) 2004-07-01

Family

ID=32173370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2003/000425 WO2004039132A2 (fr) 2002-10-18 2003-10-01 Procede destine au traitement de surface par micro-ondes et par le plasma a vide utilisant la resonance electronique cyclotronique

Country Status (2)

Country Link
RU (1) RU2223570C1 (ru)
WO (1) WO2004039132A2 (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3921844A1 (de) * 1988-07-05 1990-01-11 Mitsubishi Electric Corp Vorrichtung zur behandlung von halbleiterwafern
US5399830A (en) * 1993-01-25 1995-03-21 Mitsubishi Denki Kabushiki Kaisha Plasma treatment apparatus
RU2106716C1 (ru) * 1992-04-27 1998-03-10 Равиль Кяшшафович Яфаров Установка для микроволновой вакуумно-плазменной обработки конденсированных сред
RU2120681C1 (ru) * 1996-04-16 1998-10-20 Равиль Кяшшафович Яфаров Устройство для микроволновой вакуумно-плазменной с электронно-циклотронным резонансом обработки конденсированных сред

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3921844A1 (de) * 1988-07-05 1990-01-11 Mitsubishi Electric Corp Vorrichtung zur behandlung von halbleiterwafern
RU2106716C1 (ru) * 1992-04-27 1998-03-10 Равиль Кяшшафович Яфаров Установка для микроволновой вакуумно-плазменной обработки конденсированных сред
US5399830A (en) * 1993-01-25 1995-03-21 Mitsubishi Denki Kabushiki Kaisha Plasma treatment apparatus
RU2120681C1 (ru) * 1996-04-16 1998-10-20 Равиль Кяшшафович Яфаров Устройство для микроволновой вакуумно-плазменной с электронно-циклотронным резонансом обработки конденсированных сред

Also Published As

Publication number Publication date
WO2004039132A2 (fr) 2004-05-06
RU2223570C1 (ru) 2004-02-10

Similar Documents

Publication Publication Date Title
US5868897A (en) Device and method for processing a plasma to alter the surface of a substrate using neutrals
EP1310981B1 (en) Toroidal low-field reactive gas source
US9076626B2 (en) Plasma source apparatus and methods for generating charged particle beams
FI890497A0 (fi) Hiukkaslähde reaktiivista ionisäde-etsaus- tai plasmakerrostuslaitteistoa varten
JP5767627B2 (ja) 幅広リボンビームの生成および制御のための複合型icpおよびecrプラズマ源
TW367556B (en) Plasma processing device ad plasma processing method
EP1176624A3 (en) Method and system for microwave excitation of plasma in an ion beam guide
AU2003284194A1 (en) High-power pulsed magnetically enhanced plasma processing
WO2000037206A3 (en) Permanent magnet ecr plasma source with integrated multipolar magnetic confinement
DE69914856D1 (de) Plasma-Massenfilter
JPH04129133A (ja) イオン源及びプラズマ装置
WO2000039838A3 (en) Method for igniting a plasma inside a plasma processing reactor
EP1176623A3 (en) Waveguide for microwave excitation of plasma in an ion beam guide
WO2002019378A3 (en) System and method for removing particles entrained in an ion beam
EP1458008A3 (en) High frequency wave heated plasma mass filter
SU1758086A1 (ru) Устройство дл ионно-лучевой обработки деталей
EP0639939B1 (en) Fast atom beam source
WO2004039132A3 (fr) Procede destine au traitement de surface par micro-ondes et par le plasma a vide utilisant la resonance electronique cyclotronique
KR101311467B1 (ko) 전자 맴돌이 공명 이온원 장치 및 이의 인출 전류를 증가시키는 방법
JP2004158272A (ja) 高周波誘導結合プラズマ源および高周波誘導結合プラズマ装置
US5993678A (en) Device and method for processing a plasma to alter the surface of a substrate
WO2001062053A3 (en) Active control of electron temperature in an electrostatically shielded radio frequency plasma source
WO2009048294A3 (en) Magnetized inductively coupled plasma processing apparatus and generating method
JP4090985B2 (ja) マルチポール型マグネトロンプラズマ用磁場発生装置
Grote et al. Tune footprints for collision optics 5.0

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP