WO2004032178A3 - Plasma processing system and method - Google Patents

Plasma processing system and method Download PDF

Info

Publication number
WO2004032178A3
WO2004032178A3 PCT/US2003/030051 US0330051W WO2004032178A3 WO 2004032178 A3 WO2004032178 A3 WO 2004032178A3 US 0330051 W US0330051 W US 0330051W WO 2004032178 A3 WO2004032178 A3 WO 2004032178A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma processing
processing system
diagnostic
plasma
sensor
Prior art date
Application number
PCT/US2003/030051
Other languages
French (fr)
Other versions
WO2004032178A2 (en
Inventor
Audunn Ludviksson
Eric J Strang
Andrej S Mitrovic
Original Assignee
Tokyo Electron Ltd
Audunn Ludviksson
Eric J Strang
Andrej S Mitrovic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Audunn Ludviksson, Eric J Strang, Andrej S Mitrovic filed Critical Tokyo Electron Ltd
Priority to AU2003278885A priority Critical patent/AU2003278885A1/en
Priority to JP2004541630A priority patent/JP2006501681A/en
Publication of WO2004032178A2 publication Critical patent/WO2004032178A2/en
Publication of WO2004032178A3 publication Critical patent/WO2004032178A3/en
Priority to US11/082,246 priority patent/US20050189069A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32871Means for trapping or directing unwanted particles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963End-point detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972Spectral analysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/028Particle traps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.
PCT/US2003/030051 2002-09-30 2003-09-25 Plasma processing system and method WO2004032178A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003278885A AU2003278885A1 (en) 2002-09-30 2003-09-25 Plasma processing system and method
JP2004541630A JP2006501681A (en) 2002-09-30 2003-09-25 Plasma processing system and method
US11/082,246 US20050189069A1 (en) 2002-09-30 2005-03-17 Plasma processing system and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41434902P 2002-09-30 2002-09-30
US60/414,349 2002-09-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/082,246 Continuation US20050189069A1 (en) 2002-09-30 2005-03-17 Plasma processing system and method

Publications (2)

Publication Number Publication Date
WO2004032178A2 WO2004032178A2 (en) 2004-04-15
WO2004032178A3 true WO2004032178A3 (en) 2004-08-12

Family

ID=32069728

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/030051 WO2004032178A2 (en) 2002-09-30 2003-09-25 Plasma processing system and method

Country Status (5)

Country Link
US (1) US20050189069A1 (en)
JP (1) JP2006501681A (en)
AU (1) AU2003278885A1 (en)
TW (1) TWI238680B (en)
WO (1) WO2004032178A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4389424B2 (en) 2001-12-25 2009-12-24 東京エレクトロン株式会社 To-be-processed object conveyance mechanism and processing system
US7604701B2 (en) 2003-07-14 2009-10-20 Tokyo Electron Limited Method and apparatus for removing external components from a process chamber without compromising process vacuum
JP4972277B2 (en) * 2004-11-10 2012-07-11 東京エレクトロン株式会社 Substrate processing apparatus recovery method, apparatus recovery program, and substrate processing apparatus
FR2887072A1 (en) * 2005-06-08 2006-12-15 Alcatel Sa IMPROVED SPECTOGRAPHIC SYSTEM WITH PLASMA SOURCE
US7537671B2 (en) * 2006-09-29 2009-05-26 Tokyo Electron Limited Self-calibrating optical emission spectroscopy for plasma monitoring
JP5149610B2 (en) * 2007-12-19 2013-02-20 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP2009206344A (en) * 2008-02-28 2009-09-10 Hitachi High-Technologies Corp Apparatus and method for processing plasma
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US9885493B2 (en) * 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
TWI640039B (en) * 2014-07-03 2018-11-01 美商西凱渥資訊處理科技公司 Endpoint booster systems and methods for optical endpoint detection in wafer etch process
KR102489837B1 (en) * 2017-03-21 2023-01-18 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus and substrate processing method
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01232725A (en) * 1988-03-14 1989-09-18 Oki Electric Ind Co Ltd Dry-etching device
JPH029121A (en) * 1988-06-28 1990-01-12 Tokuda Seisakusho Ltd Plasma etching apparatus
US5851842A (en) * 1996-05-16 1998-12-22 Kabushiki Kaisha Toshiba Measurement system and measurement method
JP2001077092A (en) * 1999-09-03 2001-03-23 Hitachi Ltd Plasma processing device
US6344151B1 (en) * 1997-12-31 2002-02-05 Lam Research Corporation Gas purge protection of sensors and windows in a gas phase processing reactor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290383A (en) * 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
US5759424A (en) * 1994-03-24 1998-06-02 Hitachi, Ltd. Plasma processing apparatus and processing method
KR0159224B1 (en) * 1995-12-13 1999-02-01 김광호 End point detecting device of plasma etching system
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01232725A (en) * 1988-03-14 1989-09-18 Oki Electric Ind Co Ltd Dry-etching device
JPH029121A (en) * 1988-06-28 1990-01-12 Tokuda Seisakusho Ltd Plasma etching apparatus
US5851842A (en) * 1996-05-16 1998-12-22 Kabushiki Kaisha Toshiba Measurement system and measurement method
US6344151B1 (en) * 1997-12-31 2002-02-05 Lam Research Corporation Gas purge protection of sensors and windows in a gas phase processing reactor
JP2001077092A (en) * 1999-09-03 2001-03-23 Hitachi Ltd Plasma processing device
US6503364B1 (en) * 1999-09-03 2003-01-07 Hitachi, Ltd. Plasma processing apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 0135, no. 61 (E - 859) 13 December 1989 (1989-12-13) *
PATENT ABSTRACTS OF JAPAN vol. 0141, no. 45 (E - 0905) 19 March 1990 (1990-03-19) *

Also Published As

Publication number Publication date
AU2003278885A1 (en) 2004-04-23
WO2004032178A2 (en) 2004-04-15
TW200414832A (en) 2004-08-01
TWI238680B (en) 2005-08-21
US20050189069A1 (en) 2005-09-01
JP2006501681A (en) 2006-01-12

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